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CN217606818U - Display device and electronic equipment - Google Patents

Display device and electronic equipment Download PDF

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Publication number
CN217606818U
CN217606818U CN202221756037.3U CN202221756037U CN217606818U CN 217606818 U CN217606818 U CN 217606818U CN 202221756037 U CN202221756037 U CN 202221756037U CN 217606818 U CN217606818 U CN 217606818U
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layer
light emitting
pixel defining
color conversion
display device
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朱维
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Chongqing Kangjia Optoelectronic Technology Co ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Abstract

The application discloses display device and electronic equipment, just display device includes: a substrate on which a driving circuit layer is disposed; the pixel limiting layers are arranged on the substrate and electrically connected with the driving circuit layer, each pixel limiting layer comprises a plurality of light emitting diodes, and the light emitting diodes in the pixel limiting layers are arranged in a staggered mode; and the color conversion layer is arranged on one side of the pixel limiting layer far away from the substrate. Through the display device and the electronic equipment provided by the application, high-density display and high chip luminous efficiency can be realized simultaneously.

Description

Display device and electronic equipment
Technical Field
The present application relates to semiconductor manufacturing technologies, and in particular, to a display device and an electronic apparatus.
Background
In comparison with organic light emitting diodes, inorganic light emitting diodes are popular among people in the industry because of their stability of light emitting materials, and display technologies using inorganic light emitting diodes as backlights are widely used. As the size of the light emitting diode decreases, the manufacturing stability and the light emitting efficiency of the light emitting diode gradually decrease. In the full-color field, a display device with high display density can be manufactured through direct display of the light emitting diode or quantum dot color conversion, but the problems of low brightness, low macro-conversion yield, high power consumption and the like exist because the light emitting diode is too small in size.
Therefore, how to achieve both high-density display and high chip light-emitting efficiency is a problem that needs to be solved.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned deficiencies of the prior art, the present application aims to provide a display device and an electronic apparatus, which solve the problem that high display density and high luminous efficiency cannot be obtained at the same time.
In order to solve the technical problem, the application is realized by the following technical scheme:
the application provides a display device, including:
a substrate on which a driving circuit layer is disposed;
the pixel limiting layers are arranged on the substrate and electrically connected with the driving circuit layer, each pixel limiting layer comprises a plurality of light emitting diodes, and the light emitting diodes in the pixel limiting layers are arranged in a staggered mode; and
and the color conversion layer is arranged on one side of the pixel defining layer far away from the substrate.
According to the display device, the plurality of pixel limiting layers are arranged on the substrate, and the light emitting diode is arranged in each pixel limiting layer, so that high-density display of the display device can be ensured. Meanwhile, the color conversion layer is arranged on the pixel limiting layer, so that the luminous efficiency of the display device can be further increased.
Optionally, the pixel defining layer comprises:
a first pixel defining layer;
a second pixel defining layer disposed on the first pixel defining layer; and
a third pixel defining layer disposed on the second pixel defining layer.
Optionally, each of the pixel defining layers comprises a plurality of light emitting effective layers, and the light emitting effective layers are patterned light emitting effective layers.
Optionally, the pixel defining layer further comprises an insulating layer disposed between adjacent light emitting diodes.
The pixel limiting layer with a plurality of light-emitting diodes is formed by forming the patterned light-emitting effective layer, the micro light-emitting diodes do not need to be deposited and then transferred, the difficult problems of mass transfer and the like are avoided, and the display device with high display density is formed. And because the light-emitting diodes are arranged in multiple layers, the manufacturing difficulty of each layer of light-emitting diodes is reduced, and a wider spatial distance is provided for the processing and repairing of a single light-emitting diode.
Optionally, the driving circuit layer includes a plurality of driving circuit sublayers, and the driving circuit sublayers and the pixel defining layers are alternately arranged.
Optionally, the driving circuit layer is disposed on the substrate surface, and the via hole of each layer of the pixel defining layer is connected to the driving circuit layer.
Optionally, the color conversion layer includes a first color conversion structure, a second color conversion structure, and a third color conversion structure, and each color conversion structure is disposed at a corresponding light emitting side of the light emitting diode.
Optionally, the color conversion layer further comprises an isolation structure, and the isolation structure is arranged between the adjacent color conversion structures.
A plurality of color conversion structures are arranged in the color conversion layers, so that high-brightness light-emitting sub-pixels can be obtained, and an isolation structure is arranged between adjacent color conversion layers, so that adjacent light interference can be avoided.
Optionally, the display device further comprises an encapsulation layer disposed on a side of the color conversion layer away from the pixel defining layer.
The packaging layer is arranged on the color conversion layer, so that the quantum dot film in the color conversion layer can be prevented from being damaged.
Based on the same inventive concept, the present application also provides an electronic device, comprising:
a power supply device;
the control device is electrically connected with the power supply device; and
the display device according to any one of the above aspects, electrically connected to the control device and the power supply device.
Of course, it is not necessary for any product to achieve all of the above-described advantages at the same time for the practice of the present application.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a display device according to another embodiment of the present application.
Fig. 3 is a schematic structural diagram of a light emitting active layer before etching according to an embodiment of the present disclosure.
Fig. 4 is a schematic structural diagram of a pixel defining layer in an embodiment of the present application.
Description of reference numerals:
100-a substrate; 101-a drive circuit layer; 1011-first sub-driving circuit layer; 1012-second sub-driving circuit layer; 1013-a third sub-driver circuit layer; 102-a pixel defining layer; 1021-a first pixel definition layer; 1022 — a second pixel defining layer; 1023-a third pixel definition layer; 103-a light emitting diode; 1031-a first type semiconductor layer; 1032-light emitting layer; 1033-a second type semiconductor layer; 1034-an insulating layer; 104-a light-reflecting layer; 105-a color conversion layer; 1051-a first color conversion structure; 1052 — a second color conversion structure; 1053-a third color conversion architecture; 1054-an isolation structure; 106-encapsulation layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or assembly must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The inorganic light emitting diode display device has the advantages of long service life, high contrast, high resolution, high response speed, wide viewing angle, rich colors, ultrahigh brightness, low power consumption and the like, and can be widely applied to various electronic devices. For example, the present invention may be applied to a television, a notebook computer, a display, a mobile phone, a watch, a wearable display, an in-vehicle device, a Virtual Reality (VR) device, an Augmented Reality (AR) device, a portable electronic device, a game console, or other electronic devices.
Referring to fig. 1 and 2, in an embodiment of the present application, a display device includes a substrate 100, a plurality of light emitting diodes 103 disposed on the substrate 100, and a color conversion layer 105 on the light emitting diodes 103. In the present application, the plurality of light emitting diodes 103 on the substrate 100 are light emitting diodes 103 of the same color, and the light emitting diodes 103 of the same color are converted into sub-pixels capable of emitting a plurality of colors through the color conversion layer 105. In the present application, the color conversion layer 105 includes a plurality of sub-color conversion layers 105, each sub-color conversion layer 105 corresponds to one light emitting diode 103, and each light emitting diode 103 and the color conversion sub-layer above it form one pixel. Because a display device with high display density needs to be formed, a large number of light emitting diodes 103 need to be arranged on the substrate 100, and when all the light emitting diodes 103 are located on the same layer, the problems of low light emitting brightness, low macro-rotation yield, high power consumption and the like exist because the light emitting diodes 103 are too small in size.
In view of the above, it is desirable to provide a display device and an electronic apparatus, which can obtain a display device having high display density and high luminous efficiency by providing a plurality of pixel defining layers having light emitting diodes and a color conversion layer provided on the pixel defining layers.
Referring to fig. 1 and 2, the present application provides a display device including a substrate 100, a multi-layer pixel defining layer 102 disposed on the substrate 100, and a color conversion layer 105 disposed on the pixel defining layer 102. A plurality of light emitting diodes 103 are disposed in each layer of the pixel defining layer 102, and the light emitting diodes 103 in each layer of the pixel defining layer 102 are disposed with a shift. It will be appreciated that the type of light emitting diode 103 may be a mini light emitting diode or a micro light emitting diode. The display device provided by the application can ensure high-density display of the display device, and simultaneously, the distance between the adjacent light emitting diodes 103 in each layer of the pixel limiting layer 102 is increased. In the present application, the light-emitting effective layer in the pixel defining layer 102 is directly patterned, so that the problem of low mass transfer rate can be avoided.
Referring to fig. 1 and 2, in an embodiment of the present invention, the substrate 100 is any one of the substrates 100 commonly used in the display device manufacturing process, such as a silicon substrate, a sapphire substrate, a glass substrate, or a Printed Circuit Board (PCB) substrate. In the present application, the light emitting diode 103 in the pixel confinement layer is, for example, a blue light emitting diode 103, and the substrate 100 is, for example, a silicon substrate.
Referring to fig. 1, in an embodiment of the present invention, a driving circuit layer 101 is disposed on a substrate 100, and a plurality of pixel defining layers 102 are disposed on the driving circuit layer 101. The via hole of each layer of pixel definition layer 102 is connected to the driving circuit layer 101 to adjust the operating state of the light emitting diode 103 in each layer of pixel definition layer 102. The driving circuit layer 101 is, for example, a thin film transistor circuit layer. A plurality of through holes (not shown) are provided in each pixel defining layer 102, and a metal having good conductivity is deposited in the through holes to connect each pixel defining layer 102 with the driving circuit layer 101.
Referring to fig. 1 and fig. 2, in an embodiment of the present invention, a plurality of pixel defining layers 102 are disposed on a driving circuit layer 101, and a plurality of light emitting diodes 103 arranged in an array are disposed in each pixel defining layer 102. In each layer of pixel defining layer 102, the spacing between adjacent light emitting diodes 103 is equal. And the light emitting diodes 103 in the multi-layer pixel defining layers 102 are alternately arranged, and the distances between the adjacent light emitting diodes 103 among the multi-layer pixel defining layers 102 are also equal. The present application does not limit the specific number of the pixel defining layers 102. In the present application, the number of the pixel defining layers 102 on the substrate 100 is, for example, 3, 6, 9, or 12 layers or the like. In this embodiment, a description will be given of an example in which a 3-layer pixel defining layer 102 is provided on a substrate 100.
Referring to fig. 1 and 2, in an embodiment of the present invention, a 3-layer pixel defining layer 102 is disposed on a substrate 100, and includes a first pixel defining layer 1021, a second pixel defining layer 1022, and a third pixel defining layer 1023. Each layer of pixel limiting layer 102 comprises a plurality of light emitting diodes 103, and the light emitting diodes 103 in the plurality of layers of pixel limiting layers 102 are arranged in a staggered manner, so that the distance between two adjacent light emitting diodes 103 in the same layer of pixel limiting layer 102 is increased while the display density is ensured, and a larger space is provided for detection and repair of each layer of pixel limiting layer 102. In the present application, when forming the pixel defining layer 102, the first pixel defining layer 1021 may be deposited first, and the light emitting diode 103 in the first pixel defining layer 1021 may be detected and repaired. And then depositing a second pixel defining layer 1022, detecting and repairing the light emitting diode 103 in the second pixel defining layer 1022. Finally, the third pixel defining layer 1023 is deposited, and the light emitting diodes 103 in the third pixel defining layer 1023 are repaired and repaired. In the present application, the light emitting diode 103 may be a blue light emitting diode 103, or may be a red light emitting diode 103, a green light emitting diode 103, or any other light emitting diode 103. In the present embodiment, the light emitting diode 103 in the pixel defining layer 102 is, for example, a blue light emitting diode 103.
Specifically, referring to fig. 1 to 4, in an embodiment of the present application, each pixel defining layer 102 includes three light emitting effective layers, namely, a first type semiconductor layer 1031, a light emitting layer 1032 and a second type semiconductor layer 1033. Wherein a light emitting layer 1032 is provided over the first type semiconductor layer 1031, and a second type semiconductor layer 1033 is provided over the light emitting layer 1032. By applying a voltage to the first-type semiconductor layer 1031 and the second-type semiconductor layer 1033, photons are recombined with holes and then energy is emitted in the shape of photons, thereby causing the pixel defining layer 102 to emit light. The first type semiconductor layer 1031 may be an N type semiconductor layer containing a large number of electrons or a P type semiconductor layer containing a large number of holes. In this embodiment, the first type semiconductor layer 1031 is, for example, an N-type semiconductor layer, and the first type semiconductor layer 1031 is doped with donor impurities, for example, silicon (Si) or tellurium (Te) elements. The light emitting diode 103 emits blue light, and the first type semiconductor layer 1031 is, for example, a gallium nitride layer and an N-type gallium nitride layer. The light emitting layer 1032 is provided over the first type semiconductor layer 1031, the light emitting layer 1032 is an intrinsic semiconductor layer or a low doped semiconductor layer, the doping concentration of the light emitting layer 1032 is lower than that of an adjacent semiconductor layer of the same doping type, and the light emitting layer 1032 may be a quantum well light emitting layer 1032. In the present embodiment, the light emitting diode 103 emits blue light, and the material of the light emitting layer 1032 is indium gallium nitride (InGaN). The second type semiconductor layer 1033 may be a P type semiconductor layer having many holes or an N type semiconductor layer having many electrons. In this embodiment, the second-type semiconductor layer 1033 is, for example, a P-type semiconductor layer, and the second-type semiconductor layer 1033 is doped with an acceptor impurity such as magnesium (Mg) or zinc (Zn). The light emitting diode 103 emits blue light, and the second-type semiconductor layer 1033 is, for example, a gallium nitride layer, and is, for example, a P-type gallium nitride layer. In other embodiments, the first type semiconductor layer 1031, the light emitting layer 1032 and the second type semiconductor layer 1033 may also be formed of other suitable materials.
Referring to fig. 1 to 4, in an embodiment of the present invention, after depositing the first type semiconductor layer 1031, the light emitting layer 1032 and the second type semiconductor layer 1033, the first type semiconductor layer 1031, the light emitting layer 1032 and the second type semiconductor layer 1033 are etched to form a patterned light emitting effective layer, and the light emitting diode 103 is formed by the multi-layer patterned light emitting effective layer. In the present application, the substrate 100 is directly formed with the light emitting effective layer on the substrate, and the light emitting effective layer is patterned, so as to obtain the light emitting diodes 103 with high density, without transferring a plurality of light emitting diodes 103 onto the substrate 100 by mass transfer, thereby improving the process yield of the display device.
Referring to fig. 1 to 4, in one embodiment, after forming the light emitting diodes 103, an insulating layer 1034 is deposited between the adjacent light emitting diodes 103 to form the pixel defining layer 102. The insulating layer 1034 is made of a transparent insulating material such as polyimide, which is transparent silicon oxide, aluminum oxide, or titanium oxide.
Referring to fig. 2, in another embodiment of the present application, the driving circuit layer 101 includes a plurality of sub-driving circuit layers, the number of the sub-driving circuit layers is equal to the number of the pixel defining layers 102, and the sub-driving circuit layers and the pixel defining layers 102 are alternately disposed. That is, a sub-driver circuit layer, such as a thin film transistor circuit layer, is disposed at the bottom of each pixel defining layer 102. As shown in fig. 2, when the display device is provided with 3 pixel definition layers 102, a first sub-driving circuit layer 1011 is disposed on the substrate, a first pixel definition layer 1021 is disposed on the first sub-driving circuit layer 1011, and the first pixel definition layer 1021 is electrically connected to the first sub-driving circuit layer 1011. A second sub-driving circuit layer 1012 is disposed on the first pixel defining layer 1021, a second pixel defining layer 1022 is disposed on the second sub-driving circuit layer 1012, and the second pixel defining layer 1022 is electrically connected to the second sub-driving circuit layer 1012. A third sub-driving circuit layer 1013 is disposed on the second pixel defining layer 1022, a third pixel defining layer 1023 is disposed on the third sub-driving circuit layer 1013, and the third pixel defining layer 1023 is electrically connected to the third sub-driving circuit layer 1013. And the circuit of each sub-driving circuit layer is overlapped with the corresponding light emitting diode 103 in the pixel defining layer 102, so as to prevent the sub-driving circuit layer from blocking the light emitting diode 103 to emit light.
Referring to fig. 1 and 2, in an embodiment of the present application, a color conversion layer 105 is disposed on the pixel defining layer 102, and the color conversion layer 105 can convert the same color emitted by each of the light emitting diodes 103 into different colors, so as to form a plurality of sub-pixels with different colors. The color conversion layer 105 includes a plurality of color conversion structures, and an isolation structure 1054 disposed between adjacent color conversion structures. Specifically, the color conversion layer 105 includes a first color conversion structure 1051, a second color conversion structure 1052, and a third color conversion structure 1053, and the plurality of types of color conversion structures are alternately arranged. Each color conversion structure faces one light emitting diode 103 and covers the light reflecting range of the light emitting diode 103 on the color conversion layer 105. In the present embodiment, the first color conversion structure 1051 faces the light emitting diode 103 in the third pixel defining layer 1023, the second color conversion structure 1052 faces the light emitting diode 103 in the second pixel defining layer 1022, and the third color conversion layer 105 faces the light emitting diode 103 in the first pixel defining layer 1021. In other embodiments, each color conversion structure may be aligned to a plurality of light emitting diodes 103 in the pixel defining layer 102.
Referring to fig. 1 and fig. 2, in an embodiment of the present invention, the first color conversion structure 1051 is a red quantum dot layer, which can convert light emitted from the light emitting diode 103 into red light to form a red sub-pixel. The second color conversion structure 1052 is a green quantum dot layer that converts light emitted by the light emitting diode 103 into green light, forming a green subpixel. The third color conversion structure 1053 is a blue quantum dot layer, which can convert the light emitted from the led 103 into blue light to form a blue sub-pixel. The adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a complete luminous pixel. In the present embodiment, the light emitting diode 103 is a blue light emitting diode 103, and the third color conversion structure 1053 can be a transparent display structure, through which the light of the blue light emitting diode 103 is emitted. In other embodiments, if the light emitting diode 103 in the pixel defining layer 102 is a red light emitting diode 103 or a green light emitting diode 103, a transparent display structure may be disposed on the color conversion structure disposed on the red light emitting diode 103 or the green light emitting diode 103.
Referring to fig. 1 and fig. 2, in an embodiment of the present application, an isolation structure 1054 is further disposed between adjacent color conversion structures, and the isolation structure 1054 is made of black or gray light-blocking material, so as to prevent crosstalk between adjacent sub-pixels. Specifically, the isolation structure 1054 is made of neoprene or black resin, for example.
Referring to fig. 1 and fig. 2, in an embodiment of the present application, a reflective layer 104 may be further disposed between the pixel defining layer 102 and the color conversion layer 105, and the reflective layer 104 may reflect light with a specific wavelength, such as blue light, and reflect red light and green light, so as to ensure that the light excited by the color conversion layer 105 is emitted from the front surface of the display device.
Referring to fig. 1 and fig. 2, in an embodiment of the application, an encapsulation layer 106 is further disposed on the color conversion layer 105. The encapsulation layer 106 is a transparent encapsulation layer, and can be made of transparent encapsulation glue, for example, transparent polyimide. The encapsulation layer 106 disposed on the color conversion layer 105 can protect the quantum dot layer from being damaged.
When the display device provided in the application is applied to the electronic equipment, the electronic equipment at least comprises the display device, the control device and the power supply device, the display device and the control device are electrically connected to the power supply device, and the display device is electrically connected to the control device. The power supply device may be, for example, a power supply board that converts alternating current into a specific voltage, or may be a battery, and the power supply device is used to supply power to the driving device and the display device. The control device may include a control panel and control keys for adjusting the display device. The control keys can be any manual interaction structure such as buttons electrically connected to the control panel, remote control, or touch screen equipment on a screen. The control board can adjust the state of the display device according to the instructions input by the control keys, including but not limited to the brightness, gray scale, color and other input or output signals of the control panel.
In summary, the present application provides a display device, which includes a substrate, a driving circuit layer disposed on the substrate, a multi-layer pixel defining layer electrically connected to the driving circuit layer, a reflective layer disposed on the pixel defining layer, and an encapsulation layer disposed on the reflective layer. In each pixel defining layer, at least one patterned light emitting effective layer is disposed, i.e., a pixel defining layer having a plurality of light emitting diodes is formed. The display device provided by the application can realize high-density display and high chip luminous efficiency at the same time, and improves the process yield of the display device.
It should be understood that the application of the present application is not limited to the above examples, and that modifications or changes may be made by those skilled in the art based on the above description, and all such modifications and changes are intended to fall within the scope of the appended claims.

Claims (10)

1. A display device, characterized by comprising at least:
a substrate on which a driving circuit layer is disposed;
the pixel limiting layers are arranged on the substrate and electrically connected with the driving circuit layer, each pixel limiting layer comprises a plurality of light emitting diodes, and the light emitting diodes in the pixel limiting layers are arranged in a staggered mode; and
and the color conversion layer is arranged on one side of the pixel limiting layer far away from the substrate.
2. The display device according to claim 1, wherein the pixel defining layer comprises:
a first pixel defining layer;
a second pixel defining layer disposed on the first pixel defining layer; and
a third pixel defining layer disposed on the second pixel defining layer.
3. The display device of claim 1, wherein each of the pixel defining layers comprises a plurality of light emitting active layers, and the light emitting active layers are patterned light emitting active layers.
4. The display device of claim 1, wherein the pixel defining layer further comprises an insulating layer disposed between adjacent ones of the light emitting diodes.
5. The display device of claim 1, wherein the driving circuit layer comprises a plurality of driving circuit sublayers, and the driving circuit sublayers and the pixel defining layers are alternately arranged.
6. The display device according to claim 1, wherein the driving circuit layer is provided on the substrate surface, and the via hole of each of the pixel defining layers is connected to the driving circuit layer.
7. The display apparatus as claimed in claim 1, wherein the color conversion layer comprises a first color conversion structure, a second color conversion structure and a third color conversion structure, each color conversion structure being disposed at a light emitting side of the corresponding light emitting diode.
8. The display device of claim 7, wherein the color conversion layer further comprises an isolation structure disposed between adjacent color conversion structures.
9. The display device of claim 1, further comprising an encapsulation layer disposed on a side of the color conversion layer away from the pixel defining layer.
10. An electronic device, comprising:
a power supply device;
the control device is electrically connected with the power supply device; and
the display device according to any one of claims 1 to 9, electrically connected to the control device and the power supply device.
CN202221756037.3U 2022-07-07 2022-07-07 Display device and electronic equipment Active CN217606818U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221756037.3U CN217606818U (en) 2022-07-07 2022-07-07 Display device and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221756037.3U CN217606818U (en) 2022-07-07 2022-07-07 Display device and electronic equipment

Publications (1)

Publication Number Publication Date
CN217606818U true CN217606818U (en) 2022-10-18

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Address after: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing

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Address before: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing

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