CN119325290A - Photoelectric detector with band-pass waveguide structure and manufacturing method thereof - Google Patents
Photoelectric detector with band-pass waveguide structure and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a band-pass waveguide structure photoelectric detector and a manufacturing method thereof, in the band-pass waveguide structure photoelectric detector, a ridge waveguide is connected with a light active absorption area of a photoelectric semiconductor diode, an N electrode is connected with a first grounding wire bonding pad through a first coplanar waveguide, a P electrode is connected with a signal wire bonding pad through a second coplanar waveguide, the P electrode is also connected with a direct-current bias wire bonding pad and one electrode of a capacitor through a stub, and the other electrode of the capacitor is connected with the second grounding wire bonding pad through a third coplanar waveguide. The bandwidth response is restrained at low frequency by connecting the capacitor in parallel with the photoelectric semiconductor diode, the inductance peak effect is realized by the coplanar waveguide, the bandwidth response of the inductance peak effect in a high-frequency band-pass zone is improved, the peak value and the band-pass range of the inductance peak effect are regulated by the lambda/4 length of the stub, and the bandwidth response flatness under the W and F band-pass conditions can be met.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a photoelectric detector with a band-pass waveguide structure and a manufacturing method thereof.
Background
With the rapid development of technologies such as AI, cloud computing, big data and the like, the data center has increasingly demanded high-speed and large-capacity data transmission, and the prosperous development of a large-capacity optical fiber communication system is directly promoted. Along with the current exponential increase of data transmission capacity, the communication frequency band is increasingly saturated, and the 5G millimeter wave technology is an important basic technology in 5G application, wherein millimeter waves refer to special electromagnetic waves with the wavelength of 1 to 10 millimeters and the fluctuation frequency of 30GHz-300GHz. Compared with the traditional low-frequency electromagnetic wave, the 5G millimeter wave has higher bandwidth and transmission speed, and can realize faster data transmission and response speed. The 5G millimeter wave has wide application prospect in the fields of Internet of things, intelligent transportation, virtual reality, augmented reality and the like, and can meet the demands of future wireless communication on the aspects of system capacity, transmission rate, differential application and the like.
The millimeter wave signal generated by adopting the optical method has high frequency, simple structure and cost saving, is a key technology of optical carrier radio frequency communication, and the key component for generating the millimeter wave signal by adopting the optical method is a millimeter wave photon mixer module with high bandwidth and high responsivity. The millimeter wave photon mixer module is generally W-band and F-band, and in order to make the module have better bandwidth flatness in the band range, higher requirements are also put forward on the high-speed photoelectric detector chip besides higher requirements on the packaging technology. The bandwidth response curve of the traditional high-speed photoelectric detector is rapidly reduced under high frequency, and the bandwidth response flatness under the W and F band bandpass conditions can not be met.
Disclosure of Invention
The invention provides a band-pass waveguide structure photoelectric detector and a manufacturing method thereof, which aim to solve at least one technical problem.
The technical scheme includes that the band-pass waveguide structure photoelectric detector comprises a ridge waveguide, a photoelectric semiconductor diode, a first grounding wire bonding pad, a signal wire bonding pad, a direct-current bias wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide and a stub, wherein the ridge waveguide is connected with an optically active absorption area of the photoelectric semiconductor diode, an N electrode of the photoelectric semiconductor diode is connected with the first grounding wire bonding pad through the first coplanar waveguide, a P electrode of the photoelectric semiconductor diode is connected with the signal wire bonding pad through the second coplanar waveguide, a P electrode of the photoelectric semiconductor diode is also connected with the direct-current bias wire bonding pad through the stub and one electrode of the capacitor, the other electrode of the capacitor is connected with the second grounding wire bonding pad through the third coplanar waveguide, and the first grounding wire bonding pad and the second grounding wire bonding pad are identical in lambda-shaped common-ground wire bonding pad and lambda-shaped millimeter wave length.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the capacitance range of the capacitor is 1-3 pF.
Further, the lengths of the first coplanar waveguide, the second coplanar waveguide and the third coplanar waveguide are all 150-250 μm.
Further, the second coplanar waveguide and the stub form an L-shaped structure.
Further, the ridge waveguide and the photo-semiconductor diode form an evanescent waveguide coupling structure.
The ridge waveguide, the first grounding wire bonding pad, the signal wire bonding pad, the direct-current bias bonding pad, the second grounding wire bonding pad, the capacitor, the first coplanar waveguide, the second coplanar waveguide, the third coplanar waveguide and the stub are all integrated on the InP substrate.
Further, the epitaxial layer comprises an InP buffer layer, a waveguide layer, an N contact layer, a drift layer, a cliff layer, an absorption layer, a barrier layer and a P contact layer which are sequentially stacked from bottom to top.
Based on the above-mentioned photoelectric detector with a band-pass waveguide structure, the invention also provides a manufacturing method of the photoelectric detector with a band-pass waveguide structure, which is used for manufacturing the photoelectric detector with a band-pass waveguide structure and comprises the following steps:
S1, growing an epitaxial layer on an InP semi-insulating substrate by using a metal organic vapor deposition or molecular beam epitaxy method, wherein the epitaxial layer comprises an InP buffer layer, a waveguide layer, an N contact layer, a drift layer, a cliff layer, an absorption layer, a barrier layer and a P contact layer which are sequentially stacked and grown from bottom to top;
s2, reserving a first preset pattern area on the P contact layer, and etching the P contact layer, the blocking layer, the absorption layer, the cliff layer and the drift layer outside the first preset pattern area by adopting an ICP process until the N contact layer is exposed so as to form a P-type table top;
s3, reserving a second preset pattern area containing the first preset pattern area on the exposed N contact layer, and etching the N contact layer outside the second preset pattern area by adopting an I CP process until the waveguide layer is exposed so as to form an N-type table top;
s4, reserving a third preset pattern area containing the second preset pattern area on the exposed waveguide layer, and etching the waveguide layer and the InP buffer layer outside the third preset pattern area by adopting an InP process until the InP semi-insulating substrate is exposed so as to form a ridge waveguide table top;
S5, depositing SiO2 or Si N with the thickness of 800-1000 nm on the P-type table top, the N-type table top, the ridge waveguide table top and the exposed I < N > semi-insulating substrate by adopting a PECVD method as a passivation layer, and forming holes on the passivation layers of the N-type table top and the P-type table top;
S6, manufacturing a P electrode on a passivation layer of the P type table top and filling an opening to connect the P contact layer, manufacturing an N electrode on the passivation layer of the N type table top and filling an opening to connect the N contact layer, manufacturing a first grounding wire bonding pad, a signal wire bonding pad, a direct current bias wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide and a stub on the passivation layer of the I nP semi-insulating substrate, wherein the N electrode is connected with the first grounding wire bonding pad through the first coplanar waveguide, the P electrode is connected with the signal wire bonding pad through the second coplanar waveguide, the P electrode is also connected with the direct current bias wire bonding pad and one electrode of the capacitor through the stub, and the other electrode of the capacitor is connected with the second grounding wire bonding pad through the third coplanar waveguide.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the step S6 specifically includes:
Manufacturing an N electrode on a passivation layer of the N-type mesa by adopting an electron beam evaporation or magnetron sputtering method, and extending the N electrode to the passivation layer of the InP semi-insulating substrate to form a first coplanar waveguide, a first grounding wire bonding pad connected with the first coplanar waveguide, a third coplanar waveguide and a second grounding wire bonding pad connected with the third coplanar waveguide, wherein when the N electrode is manufactured on the passivation layer of the N-type mesa, the N electrode fills an opening to be connected with the N contact layer;
Selecting a preset area on a third coplanar waveguide as a capacitor lower electrode, depositing SiO 2 with the thickness of 200-300 nm on the capacitor lower electrode as a capacitor insulating layer by adopting a PECVD method, and extending the capacitor insulating layer to the passivation layer of the InP semi-insulating substrate to form a preset insulating layer area;
And manufacturing a direct current bias wire bonding pad on the preset insulating layer area by adopting an electron beam evaporation or magnetron sputtering method, extending to the capacitor insulating layer to form a capacitor upper electrode, extending to the passivation layer of the I nP semi-insulating substrate to form a stub, extending to the passivation layer of the P type mesa to form a P electrode, and extending to the passivation layer of the I nP semi-insulating substrate to form a second coplanar waveguide and a signal wire bonding pad connected with the second coplanar waveguide, wherein when the P electrode is formed on the passivation layer of the P type mesa, the P electrode fills an opening to be connected with the P contact layer.
Further, the step S6 specifically includes:
Manufacturing an N electrode on a passivation layer of the N-type mesa by adopting an electron beam evaporation or magnetron sputtering method, manufacturing a capacitor lower electrode and a direct-current bias wire bonding pad connected with the capacitor lower electrode on the passivation layer of the InP semi-insulating substrate, wherein when the N electrode is manufactured on the passivation layer of the N-type mesa, the N electrode fills an opening to be connected with the N contact layer;
depositing SiO 2 with the thickness of 200-300 nm on the capacitor lower electrode by adopting a PECVD method as a capacitor insulating layer, and forming an opening on the capacitor insulating layer to enable the bottom of the opening to be the capacitor lower electrode;
And manufacturing a first coplanar waveguide connected with the N electrode and a first grounding wire bonding pad connected with the first coplanar waveguide on a passivation layer of the InP semi-insulating substrate by adopting an electron beam evaporation or magnetron sputtering method, manufacturing a capacitor upper electrode on the capacitor insulating layer, manufacturing a third coplanar waveguide connected with the capacitor upper electrode and a second grounding wire bonding pad connected with the third coplanar waveguide on the passivation layer of the InP semi-insulating substrate, manufacturing a P electrode on the passivation layer of the P type mesa, manufacturing a second coplanar waveguide connected with the P electrode and a signal wire bonding pad connected with the second coplanar waveguide on the passivation layer of the InP semi-insulating substrate, manufacturing a stub connected with the P electrode on the passivation layer of the InP semi-insulating substrate, and filling an opening on the capacitor insulating layer to be connected with the capacitor lower electrode by the stub, wherein the P electrode is connected with the opening layer when the P filling is formed on the passivation layer of the P type mesa.
The band-pass waveguide structure photoelectric detector and the manufacturing method thereof have the advantages that the band-pass waveguide structure photoelectric detector is connected with the direct-connection capacitor in parallel on the photoelectric semiconductor diode, the band-pass waveguide structure photoelectric detector is equivalent to the fact that the junction capacitance of the photoelectric semiconductor diode is increased, so that bandwidth response is restrained at low frequency, but the resistance capacitance parameter of the photoelectric detector is increased due to the fact that the resistance capacitance parameter of the photoelectric detector is increased, the bandwidth of the photoelectric detector is reduced due to the fact that the resistance capacitance parameter of the photoelectric detector is increased, in order to improve the bandwidth of the photoelectric detector, inductance peak effect is achieved through the coplanar waveguide to compensate the capacitance effect of the photoelectric detector, so that the bandwidth response flatness of the photoelectric detector in the high-band pass region can be met, in addition, the stub in the band-pass region adjustment and the isolation function of millimeter wave signals and direct-current signals can be achieved, the stub length is 1/4 of wavelength, according to the microwave impedance theory, the fact that the length of the stub is large in a load impedance sense, the fact that the length of the stub is transmitted to infinite stub is in a physical sense, in order to improve the bandwidth of the photoelectric detector, the stub is changed from the coplanar waveguide, the length of the millimeter wave, and the reflection signal is changed to the corresponding length of the millimeter wave, and the millimeter wave is changed from the millimeter wave, and the millimeter wave signal is reflected to the full length of the millimeter wave, and the millimeter wave is changed, and the reflection signal is the length of the millimeter wave is changed, and the millimeter wave is the millimeter wave.
Drawings
FIG. 1 is a schematic diagram of a bandpass waveguide photodetector according to the present invention;
FIG. 2 is a schematic diagram showing a schematic diagram of a chip structure of a photodetector with a bandpass waveguide structure according to the present invention;
FIG. 3 is a schematic plan view of a chip structure of a photodetector with a bandpass waveguide structure according to the present invention;
FIG. 4 is a graph of the frequency response of a conventional photodetector;
FIG. 5 is a graph showing the frequency response of a photodetector with a bandpass waveguide structure according to the present invention;
FIG. 6 is a flowchart of a method for fabricating a bandpass waveguide photodetector according to the present invention;
FIG. 7 is a flowchart of S2-S5 in a method for fabricating a photodetector with a bandpass waveguide structure according to the present invention;
FIG. 8 is a flow chart of S6 in a method for fabricating a photodetector with a bandpass waveguide structure according to the invention;
fig. 9 is a flowchart of another manufacturing method of S6 in the manufacturing method of the band-pass waveguide structure photodetector of the present invention.
In the drawings, the list of components represented by the various numbers is as follows:
1. The semiconductor device comprises a ridge waveguide, a photoelectric semiconductor diode, a first grounding wire bonding pad, a signal wire bonding pad, a direct current bias wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide, a short stub, a semi-insulating InP substrate, a first grounding wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide, a short stub, a first grounding wire bonding pad, a second grounding wire bonding pad, a third grounding wire bonding pad, a first coplanar waveguide, a third coplanar waveguide, a short stub and a semi-insulating InP substrate.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1, the band-pass waveguide structure photodetector comprises a ridge waveguide 1, a photoelectric semiconductor diode 2, a first grounding wire bonding pad 3, a signal wire bonding pad 4, a direct-current bias wire bonding pad 5, a second grounding wire bonding pad 6, a capacitor 7, a first coplanar waveguide 8, a second coplanar waveguide 9, a third coplanar waveguide 10 and a stub 11, wherein the ridge waveguide 1 is connected with an optically active absorption region of the photoelectric semiconductor diode 2, an N electrode of the photoelectric semiconductor diode 2 is connected with the first grounding wire bonding pad 3 through the first coplanar waveguide 8, a P electrode of the photoelectric semiconductor diode 2 is connected with the signal wire bonding pad 4 through the second coplanar waveguide 9, the P electrode of the photoelectric semiconductor diode 2 is also connected with the direct-current bias wire bonding pad 5 and one electrode of the capacitor 7 through the stub 11, the other electrode of the capacitor 7 is connected with the second grounding wire bonding pad 6 through the third coplanar waveguide 10, and the P electrode of the photoelectric semiconductor diode 2 is connected with the first grounding wire bonding pad 4, wherein the lambda-shaped grounding wire bonding pad is the lambda-shaped wire bonding pad 4, and the lambda-shaped grounding wire bonding pad is the lambda-shaped.
Wherein, since the first ground wire bonding pad 3 and the second ground wire bonding pad 6 are commonly grounded, both ends of the capacitor 7 are actually connected to the N electrode and the P electrode of the photo semiconductor diode 2, that is, the capacitor 7 is connected in parallel with the photo semiconductor diode 2.
In some embodiments, the capacitance of the capacitor 7 ranges from 1 to 3pF. The lengths of the first coplanar waveguide 8, the second coplanar waveguide 9 and the third coplanar waveguide 10 are all 150-250 μm, and preferably, the lengths of the coplanar waveguides (including the first coplanar waveguide 8, the second coplanar waveguide 9 and the third coplanar waveguide 10) are selected to be about 200 μm. The second coplanar waveguide 9 and the stub 11 form an L-shaped structure. The ridge waveguide 1 and the photoelectric semiconductor diode 2 form an evanescent waveguide coupling structure, incident light of the evanescent waveguide coupling structure is incident from the side instead of the vertical plane, the waveguide transmits optical signals and is coupled to an optical active absorption region of the photoelectric detector through evanescent coupling, and the photoelectric detector of the waveguide structure has the characteristics of high responsivity and large response bandwidth.
In some embodiments, as shown in fig. 2 and 3, the photodiode 2 is fabricated by etching an epitaxial layer on a semi-insulating iinp substrate 12, wherein the ridge waveguide 1, the first ground wire bond pad 3, the signal wire bond pad 4, the dc bias wire bond pad 5, the second ground wire bond pad 6, the capacitor 7, the first coplanar waveguide 8, the second coplanar waveguide 9, the third coplanar waveguide 10, and the stub 11 are all integrated on the iinp substrate, and wherein the epitaxial layer comprises an iinp buffer layer, a waveguide layer, an N contact layer, a drift layer, a cliff layer, an absorber layer, a barrier layer, and a P contact layer, which are sequentially stacked from bottom to top. The InP buffer layer is used for buffering a growth epitaxial structure, reducing defects such as uneven epitaxy and stress, the waveguide layer is used for forming a ridge waveguide, the N contact layer is used as an N region of the photoelectric semiconductor diode, the drift layer is used for collecting carriers in the photoelectric semiconductor diode, the cliff layer is used for establishing a built-in electric field, diffusion movement of the carriers is converted into drifting movement, the movement speed is higher, the response speed is higher, the absorption layer is used for absorbing photons and converting the photons into electrons, the blocking layer is used for blocking hole movement, and the P contact layer is used as a P region of the photoelectric semiconductor diode.
The invention provides a band-pass waveguide structure photoelectric detector for converting an optical mixing signal into a millimeter wave signal, which aims to convert the optical mixing signal into the millimeter wave signal and match the encapsulation of a millimeter wave photon mixer module, wherein a capacitor is connected in parallel on a photoelectric semiconductor diode to inhibit bandwidth response at low frequency, inductance peak effect is realized through a coplanar waveguide, the inductance peak effect improves the bandwidth response in a high-frequency band pass region, and the peak value and the band-pass range of the inductance peak effect are regulated through the lambda/4 length of a stub.
Specifically, the invention is equivalent to increasing the junction capacitance of the photoelectric semiconductor diode by connecting the photoelectric semiconductor diode in parallel with a blocking capacitor, thereby inhibiting the bandwidth response at low frequency. However, increasing the junction capacitance of the photo-semiconductor diode increases the resistance-capacitance parameter of the photo-detector, which decreases the bandwidth of the photo-detector. Since the photodetector is a capacitive device, by matching the appropriate inductance, the capacitive effect of the photodetector can be compensated at a particular frequency, thereby increasing the bandwidth of the device. Therefore, the coplanar waveguide is formed as an external load inductance in the manufacturing process of the photoelectric detector electrode, and the influence of parasitic parameters of the photoelectric detector on the frequency response is counteracted through the inductance value, so that the bandwidth response in a high-frequency band pass region is improved. Therefore, in order to improve the bandwidth response of the photoelectric detector in the high-frequency band pass region, the invention realizes the inductance peak effect through the coplanar waveguide to compensate the capacitance effect of the photoelectric detector so as to improve the bandwidth response of the photoelectric detector in the high-frequency band pass region, thereby meeting the bandwidth response flatness under the W and F band pass conditions. In addition, the stub in the invention can realize band-pass interval adjustment and isolation function of millimeter wave signals and direct current signals, the length of the stub is 1/4 of millimeter wave wavelength, according to the microwave impedance theory, the lambda/4 length is infinite in physical sense, signals transmitted to the stub are totally reflected, the millimeter wave signals are totally transmitted to the signal wire bonding pad through the coplanar waveguide, the millimeter wave signals are not transmitted to the direct current bias wire bonding pad through the stub (the direct current bias wire bonding pad provides direct current bias for a photoelectric detector), thereby realizing isolation of millimeter wave signals and direct current signals, meanwhile, the relationship between the millimeter wave wavelength and the length of the stub is a multiple, so that the length of the stub is changed, namely the reflected millimeter wave wavelength is changed, namely the frequency point of the peak value of the reflected signal is changed, and the band-pass interval is correspondingly adjusted.
Fig. 4 is a frequency response graph of a conventional photodetector, which reflects the bandwidth response characteristic of the conventional photodetector. The bandwidth of the common photoelectric detector is mainly influenced by carrier transport time and RC parameters, under the condition that the carrier transport time is fixed, the larger the RC parameters are, the smaller the bandwidth is, the smaller the RC parameters are, the larger the bandwidth is, meanwhile, the bandwidth of the common photoelectric detector is also influenced by inductance peak resonance effect, and under proper inductance, the bandwidth has a peak effect under specific frequency. The junction capacitance of the common photoelectric detector is only below 50fF, the series resistance is below 20 omega, and the RC parameter bandwidth can be ensured to be above 80 GHz.
According to the invention, after the photo-semiconductor diode is connected with a capacitor of 1-3 pF in parallel, RC parameters become large, so that low-frequency bandwidth response is reduced, but inductance peak effect is realized through the stub and a coplanar waveguide (about 200 um) with a certain length. Fig. 5 is a frequency response graph of a band-pass waveguide structure photodetector of the present invention, reflecting the bandwidth response characteristic of the band-pass waveguide structure photodetector of the present invention, in fig. 5, a peak effect is presented at a specific 75 ghz-110 ghz (W-band), and suppressed at a low frequency (5-60 ghz), so that a relatively flat bandwidth response in the 75 ghz-110 ghz range can be ensured, the flatness is less than 3dB, and the specific band-pass output characteristic is realized.
The millimeter wave is tested and transmitted by using a metal rectangular waveguide generally, the rectangular waveguide has small loss and wide bandwidth, has better performance and cost advantages than the traditional coaxial connector when the frequency exceeds 100GHz, and the millimeter wave frequency band mainly has different band-pass bands such as a W band-pass band of 75-110 GHz, an F band-pass band of 90-140 GHz, a D band-pass band of 110-170 GHz and the like according to the band division standard of the metal rectangular waveguide. The metal coaxial connector is generally in the whole wave band from low frequency to high frequency, such as 0-100 GHz, but the insertion loss of the coaxial connector is about 2-3 dB above 100GHz, and the insertion loss of the band-pass metal waveguide is about 0.5dB in the 100GHz frequency band, so that the band-pass metal waveguide is smaller in loss and more suitable for millimeter wave testing and transmission.
Based on the band-pass waveguide structure photoelectric detector, the invention also provides a manufacturing method of the band-pass waveguide structure photoelectric detector.
As shown in fig. 6, a method for manufacturing a bandpass waveguide structure photodetector, for manufacturing the bandpass waveguide structure photodetector described above, includes:
S1, growing an epitaxial layer on an InP semi-insulating substrate by using a metal organic vapor deposition or molecular beam epitaxy method, wherein the epitaxial layer comprises an InP buffer layer, a waveguide layer, an N contact layer, a drift layer, a cliff layer, an absorption layer, a barrier layer and a P contact layer which are sequentially stacked and grown from bottom to top;
s2, reserving a first preset pattern area on the P contact layer, and etching the P contact layer, the blocking layer, the absorption layer, the cliff layer and the drift layer outside the first preset pattern area by adopting an ICP process until the N contact layer is exposed so as to form a P-type table top;
s3, reserving a second preset pattern area containing the first preset pattern area on the exposed N contact layer, and etching the N contact layer outside the second preset pattern area by adopting an I CP process until the waveguide layer is exposed so as to form an N-type table top;
s4, reserving a third preset pattern area containing the second preset pattern area on the exposed waveguide layer, and etching the waveguide layer and the InP buffer layer outside the third preset pattern area by adopting an InP process until the InP semi-insulating substrate is exposed so as to form a ridge waveguide table top;
S5, depositing SiO2 or Si N with the thickness of 800-1000 nm on the P-type table top, the N-type table top, the ridge waveguide table top and the exposed I < N > semi-insulating substrate by adopting a PECVD method as a passivation layer, and forming holes on the N-type table top and the passivation layer of the P-type table top (the passivation layer can protect the P-type table top and the side wall of the N-type table top from electric leakage);
S6, manufacturing a P electrode on a passivation layer of the P type table top and filling an opening to connect the P contact layer, manufacturing an N electrode on the passivation layer of the N type table top and filling an opening to connect the N contact layer, manufacturing a first grounding wire bonding pad, a signal wire bonding pad, a direct current bias wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide and a stub on the passivation layer of the I nP semi-insulating substrate, wherein the N electrode is connected with the first grounding wire bonding pad through the first coplanar waveguide, the P electrode is connected with the signal wire bonding pad through the second coplanar waveguide, the P electrode is also connected with the direct current bias wire bonding pad and one electrode of the capacitor through the stub, and the other electrode of the capacitor is connected with the second grounding wire bonding pad through the third coplanar waveguide.
FIG. 7 is a schematic diagram of steps S2-S5 in the method for fabricating a bandpass waveguide structure photodetector according to the present invention, in which P-type mesa, N-type mesa, ridge waveguide mesa and passivation opening are fabricated sequentially from left to right along the arrow direction.
In some embodiments, as shown in fig. 8, the S6 is specifically:
S61 a, manufacturing an N electrode (the N electrode is formed by evaporation plating or electron beam evaporation AuGe/N I/Au) on a passivation layer of the N-type mesa by adopting an electron beam evaporation or magnetron sputtering method and extending to the passivation layer of the I nP semi-insulating substrate to form a first coplanar waveguide, a first grounding wire bonding pad connected with the first coplanar waveguide, a third coplanar waveguide and a second grounding wire bonding pad connected with the third coplanar waveguide, wherein when the N electrode is manufactured on the passivation layer of the N-type mesa, the N electrode fills an opening to be connected with the N contact layer;
S62a, selecting a preset area on the third coplanar waveguide as a capacitor lower electrode, depositing SiO 2 with the thickness of 200-300 nm on the capacitor lower electrode as a capacitor insulating layer by adopting a PECVD method, and extending the SiO 2 to the passivation layer of the InP semi-insulating substrate to form a preset insulating layer area;
S63a, manufacturing a direct current bias wire bonding pad on the preset insulating layer area by adopting an electron beam evaporation or magnetron sputtering method, extending to the capacitor insulating layer to form a capacitor upper electrode, extending to the passivation layer of the I nP semi-insulating substrate to form a stub, extending to the passivation layer of the P type mesa to form a P electrode, and extending to the passivation layer of the I nP semi-insulating substrate to form a second coplanar waveguide and a signal wire bonding pad connected with the second coplanar waveguide, wherein when the P electrode is formed on the passivation layer of the P type mesa, the P electrode fills an opening to be connected with the P contact layer.
In fig. 8, S61 a, S62a, and S63a correspond in order from left to right in the arrow direction. In the method, a capacitor lower electrode is connected with a first grounding wire bonding pad and a second grounding wire bonding pad, and a capacitor upper electrode is connected with a stub and a DC bias wire bonding pad.
In other embodiments, as shown in fig. 9, the step S6 is specifically:
S61 b, manufacturing an N electrode on a passivation layer of the N-type mesa by adopting an electron beam evaporation or magnetron sputtering method, and manufacturing a capacitor lower electrode and a direct-current bias wire bonding pad connected with the capacitor lower electrode on the passivation layer of the I nP semi-insulating substrate, wherein when the N electrode is manufactured on the passivation layer of the N-type mesa, the N electrode is filled with an opening to be connected with the N contact layer;
s62b, depositing SiO 2 with the thickness of 200-300 nm on the capacitor lower electrode by adopting a PECVD method as a capacitor insulating layer, and forming an opening on the capacitor insulating layer to enable the bottom of the opening to be the capacitor lower electrode;
And S63b, manufacturing a first coplanar waveguide connected with the N electrode and a first grounding wire bonding pad connected with the first coplanar waveguide on a passivation layer of the I nP semi-insulating substrate by adopting an electron beam evaporation or magnetron sputtering method, manufacturing a capacitor upper electrode on the capacitor insulating layer, manufacturing a third coplanar waveguide connected with the capacitor upper electrode and a second grounding wire bonding pad connected with the third coplanar waveguide on the passivation layer of the I nP semi-insulating substrate, manufacturing a P electrode on the passivation layer of the P type mesa, manufacturing a second coplanar waveguide connected with the P electrode and a signal wire bonding pad connected with the second coplanar waveguide on the passivation layer of the I nP semi-insulating substrate, manufacturing a stub connected with the P electrode on the passivation layer of the I nP semi-insulating substrate, and filling an opening on the capacitor insulating layer with the stub so as to be connected with the capacitor lower electrode, wherein the P electrode is filled with the P opening when the P electrode is formed on the passivation layer of the P type mesa.
In fig. 9, S61b, S62b, and S63b correspond in order from left to right in the arrow direction. In the method, a capacitor lower electrode is connected with a stub and a DC bias wire bonding pad, and a capacitor upper electrode is connected with a first grounding wire bonding pad and a second grounding wire bonding pad.
The invention relates to a manufacturing method of a band-pass waveguide structure photoelectric detector, which utilizes metal organic vapor deposition or molecular beam epitaxy to grow an epitaxial layer on a semi-insulating substrate, meanwhile adopts an ICP process to obtain a P type mesa, and obtains an N type mesa and a ridge waveguide mesa according to the method, adopts PECVD to deposit SiO2 or SiN with the thickness of 800-1000 nm as a passivation layer, adopts electron beam evaporation or magnetron sputtering to manufacture N mesa metal (to form an N electrode) and a capacitor bottom electrode, adopts PECVD to deposit SiO2 with the thickness of 200-300 nm as a capacitor insulating layer, adopts electron beam evaporation or magnetron sputtering to manufacture P mesa metal (to form a P electrode), and adopts a stripping process to finish metal manufacturing.
The band-pass waveguide structure photoelectric detector manufactured by the manufacturing method converts an optical mixing signal into a millimeter wave signal and matches the millimeter wave photon mixer module, the bandwidth response is restrained at low frequency by connecting a capacitor in parallel to a photoelectric semiconductor diode, the inductance peak effect is realized by a coplanar waveguide, the bandwidth response in a high-frequency band pass zone is improved by the inductance peak effect, the peak value and the band-pass range of the inductance peak effect are regulated by the lambda/4 length of a stub, and the bandwidth response flatness under the W and F band pass conditions can be met.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. A band-pass waveguide structure photoelectric detector is characterized by comprising a ridge waveguide, a photoelectric semiconductor diode, a first grounding wire bonding pad, a signal wire bonding pad, a direct-current bias wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide and a stub, wherein the ridge waveguide is connected with an optically active absorption area of the photoelectric semiconductor diode, an N electrode of the photoelectric semiconductor diode is connected with the first grounding wire bonding pad through the first coplanar waveguide, a P electrode of the photoelectric semiconductor diode is connected with the signal wire bonding pad through the second coplanar waveguide, a P electrode of the photoelectric semiconductor diode is also connected with the direct-current bias wire bonding pad and one electrode of the capacitor through the stub, the other electrode of the capacitor is connected with the second grounding wire bonding pad through the third coplanar waveguide, the first grounding wire bonding pad and the second grounding wire bonding pad are in common, and the length of the stub is lambda/lambda is millimeter wave.
2. The bandpass waveguide structure photodetector of claim 1, wherein the capacitance range of the capacitor is 1-3 pf.
3. The bandpass waveguide structure photodetector of claim 1, wherein the length ranges of said first coplanar waveguide, said second coplanar waveguide, and said third coplanar waveguide are all 150-250 μm.
4. The bandpass waveguide structure photodetector of claim 1, wherein said second coplanar waveguide and said stub form an L-shaped structure.
5. The bandpass waveguide structure photodetector of claim 1, wherein the ridge waveguide and the photodiode form an evanescent waveguide coupling structure.
6. The bandpass waveguide structure photodetector of claim 1, wherein said photodiode is fabricated by etching an epitaxial layer on a semi-insulating InP substrate, and wherein said ridge waveguide, said first ground wire bond pad, said signal wire bond pad, said dc bias bond pad, said second ground wire bond pad, said capacitor, said first coplanar waveguide, said second coplanar waveguide, said third coplanar waveguide, and said stub are all integrated on said InP substrate.
7. The bandpass waveguide structure photodetector of claim 6, wherein said epitaxial layer comprises an InP buffer layer, a waveguide layer, an N contact layer, a drift layer, a cliff layer, an absorber layer, a barrier layer, and a P contact layer, which are stacked in this order from bottom to top.
8. A method for manufacturing a photoelectric detector with a band-pass waveguide structure is characterized in that, a method for manufacturing a bandpass waveguide structure photodetector as defined in any one of claims 1 to 7, comprising:
S1, growing an epitaxial layer on an InP semi-insulating substrate by using a metal organic vapor deposition or molecular beam epitaxy method, wherein the epitaxial layer comprises an InP buffer layer, a waveguide layer, an N contact layer, a drift layer, a cliff layer, an absorption layer, a barrier layer and a P contact layer which are sequentially stacked and grown from bottom to top;
S2, reserving a first preset pattern area on the P contact layer, and etching the P contact layer, the barrier layer, the absorption layer, the cliff layer and the drift layer outside the first preset pattern area by adopting an ICP process until the N contact layer is exposed to form a P type table top;
s3, reserving a second preset pattern area containing the first preset pattern area on the exposed N contact layer, and etching the N contact layer outside the second preset pattern area by adopting an ICP process until the waveguide layer is exposed so as to form an N-type table top;
S4, reserving a third preset pattern area containing the second preset pattern area on the exposed waveguide layer, and etching the waveguide layer and the InP buffer layer outside the third preset pattern area by adopting an ICP process until the InP semi-insulating substrate is exposed, so as to form a ridge waveguide table top;
s5, depositing SiO2 or SiN with the thickness of 800-1000 nm on the P-type table top, the N-type table top, the ridge waveguide table top and the exposed InP semi-insulating substrate by adopting a PECVD method as a passivation layer, and forming holes on the passivation layers of the N-type table top and the P-type table top;
S6, manufacturing a P electrode on a passivation layer of the P type table top and filling an opening to connect the P contact layer, manufacturing an N electrode on the passivation layer of the N type table top and filling an opening to connect the N contact layer, manufacturing a first grounding wire bonding pad, a signal wire bonding pad, a direct current bias wire bonding pad, a second grounding wire bonding pad, a capacitor, a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide and a stub on the passivation layer of the InP semi-insulating substrate, wherein the N electrode is connected with the first grounding wire bonding pad through the first coplanar waveguide, the P electrode is connected with the signal wire bonding pad through the second coplanar waveguide, the P electrode is also connected with the direct current bias wire bonding pad and one electrode of the capacitor through the stub, and the other electrode of the capacitor is connected with the second grounding wire bonding pad through the third coplanar waveguide.
9. The method for manufacturing a bandpass waveguide structure photodetector according to claim 8, wherein S6 is specifically:
Manufacturing an N electrode on a passivation layer of the N-type mesa by adopting an electron beam evaporation or magnetron sputtering method, and extending the N electrode to the passivation layer of the InP semi-insulating substrate to form a first coplanar waveguide, a first grounding wire bonding pad connected with the first coplanar waveguide, a third coplanar waveguide and a second grounding wire bonding pad connected with the third coplanar waveguide, wherein when the N electrode is manufactured on the passivation layer of the N-type mesa, the N electrode fills an opening to be connected with the N contact layer;
Selecting a preset area on a third coplanar waveguide as a capacitor lower electrode, depositing SiO 2 with the thickness of 200-300 nm on the capacitor lower electrode as a capacitor insulating layer by adopting a PECVD method, and extending the capacitor insulating layer onto a passivation layer of the InP semi-insulating substrate to form a preset insulating layer area;
and manufacturing a direct current bias wire bonding pad on the preset insulating layer area by adopting an electron beam evaporation or magnetron sputtering method, extending to the capacitor insulating layer to form a capacitor upper electrode, extending to the passivation layer of the InP semi-insulating substrate to form a stub, extending to the passivation layer of the P type mesa to form a P electrode, and extending to the passivation layer of the InP semi-insulating substrate to form a second coplanar waveguide and a signal wire bonding pad connected with the second coplanar waveguide, wherein when the P electrode is formed on the passivation layer of the P type mesa, the P electrode fills an opening to be connected with the P contact layer.
10. The method for manufacturing a bandpass waveguide structure photodetector according to claim 8, wherein S6 is specifically:
An N electrode is manufactured on a passivation layer of the N-type mesa by adopting an electron beam evaporation or magnetron sputtering method, a capacitor lower electrode and a direct-current bias wire bonding pad connected with the capacitor lower electrode are manufactured on the passivation layer of the InP semi-insulating substrate, wherein when the N electrode is manufactured on the passivation layer of the N-type mesa, the N electrode is filled with an opening to be connected with the N contact layer;
depositing SiO 2 with the thickness of 200-300 nm on the capacitor lower electrode by adopting a PECVD method as a capacitor insulating layer, and forming an opening on the capacitor insulating layer to enable the bottom of the opening to be the capacitor lower electrode;
And manufacturing a first coplanar waveguide connected with the N electrode and a first grounding wire bonding pad connected with the first coplanar waveguide on a passivation layer of the InP semi-insulating substrate by adopting an electron beam evaporation or magnetron sputtering method, manufacturing a capacitor upper electrode on the capacitor insulating layer, manufacturing a third coplanar waveguide connected with the capacitor upper electrode and a second grounding wire bonding pad connected with the third coplanar waveguide on the passivation layer of the InP semi-insulating substrate, manufacturing a P electrode on the passivation layer of the P type mesa, manufacturing a second coplanar waveguide connected with the P electrode and a signal wire bonding pad connected with the second coplanar waveguide on the passivation layer of the InP semi-insulating substrate, manufacturing a stub connected with the P electrode on the passivation layer of the InP semi-insulating substrate, and filling an opening on the capacitor insulating layer with the stub so as to be connected with the capacitor lower electrode, wherein when the P electrode is formed on the passivation layer of the P type mesa, the P electrode is filled with the opening so as to be connected with the P contact layer.
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