CN118814145B

CN118814145B - A temperature control method and system for a CVD reactor

Info

Publication number: CN118814145B
Application number: CN202411297487.4A
Authority: CN
Inventors: 曹建伟; 刘毅; 傅林坚; 朱亮; 余婷; 梁旭; 周文龙
Original assignee: Zhejiang Jingsheng Mechanical and Electrical Co Ltd; Zhejiang Qiushi Semiconductor Equipment Co Ltd
Current assignee: Zhejiang Jingsheng Mechanical and Electrical Co Ltd; Zhejiang Qiushi Semiconductor Equipment Co Ltd
Priority date: 2024-09-18
Filing date: 2024-09-18
Publication date: 2025-01-28
Anticipated expiration: 2044-09-18
Also published as: CN118814145A

Abstract

The invention discloses a temperature control method and a temperature control system of a CVD (chemical vapor deposition) reactor, wherein the temperature control method of the CVD reactor comprises the steps of obtaining the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate containing quantity of a substrate carrying platform in the CVD reactor and the current component coefficients of heat transfer gases corresponding to the substrates, determining the bottom heating temperature of the substrate carrying platform according to the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate containing quantity of the CVD reactor, controlling the CVD reactor to heat the substrate carrying platform at the bottom heating temperature, determining the adjusting component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature, the current top temperature, the substrate containing quantity of the CVD reactor, the current bottom average temperature and the current component coefficients, and controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjusting component coefficients.

Description

Temperature control method and system for CVD reactor

Technical Field

The invention relates to the technical field of semiconductors, in particular to a temperature control method and a temperature control system for a CVD (chemical vapor deposition) reactor.

Background

A chemical vapor deposition (Chemical Vapor Deposition, CVD) reactor is an apparatus that can achieve coating of semiconductor substrates. When the existing CVD reactor is used for producing epitaxial wafers, a base in the CVD reactor is heated by a heating device, heat is transferred to a substrate through the base and heat conduction gas between the base and the substrate, so that the temperature of the substrate is adjusted, and a corresponding semiconductor film layer is formed on the substrate when the temperature is proper.

In the process of coating a semiconductor substrate such as a substrate in a CVD reactor, the effect of the gas species and the gas flow in the reactor on the film deposition is greatly affected, and in addition, the temperature distribution is an important factor affecting the film formation. The existing method for adjusting the whole temperature of the substrate in the reaction cavity is as follows, based on a mapping table stored in advance, the heating temperature corresponding to the current temperature of the substrate is determined as the heating temperature of the heater, but the method needs to store a large amount of data in advance, and when the detected current temperature has no corresponding data in the mapping table, the control precision of the substrate temperature is lower.

Disclosure of Invention

The invention provides a temperature control method and a temperature control system for a CVD reactor, which are used for improving the control accuracy and the control reliability of the temperature of each substrate in the CVD reactor.

In a first aspect, the present invention provides a method of controlling the temperature of a CVD reactor, comprising:

Acquiring the current top temperature, the preset top average temperature, the current bottom average temperature of a substrate carrying platform and the substrate accommodating quantity of the CVD reactor of each substrate in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate;

Determining a bottom heating temperature of the substrate stage according to each of the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate stage at the bottom heating temperature;

determining an adjustment component coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and each current component coefficient, and controlling the CVD reactor to adjust the component coefficient of each heat transfer gas according to the adjustment component coefficient.

Optionally, determining the bottom heating temperature of the substrate stage according to the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor comprises determining the current top average temperature according to the current top temperature and the substrate accommodating quantity of the CVD reactor, and determining the bottom heating temperature of the substrate stage according to the current top average temperature, the preset top average temperature and the current bottom average temperature.

Optionally, determining the bottom heating temperature of the substrate carrier according to the current top average temperature, the preset top average temperature and the current bottom average temperature comprises determining a current top temperature difference value according to the current top average temperature and the preset top average temperature, and determining the bottom heating temperature according to the current top temperature difference value and the current bottom average temperature.

Optionally, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature of the substrates, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and the current component coefficients comprises determining the current top average temperature according to the current top temperature and the substrate accommodating quantity of the CVD reactor, judging whether the absolute value of the difference between the preset top average temperature and the current top average temperature is smaller than or equal to a preset difference value, and if yes, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the current top temperature of the substrates, the preset top average temperature, the current bottom average temperature and the current component coefficients.

Optionally, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the current top temperature, the preset top average temperature, the current bottom average temperature and the current component coefficients of the substrates comprises determining a top temperature ratio according to the current top temperature, the preset top average temperature and the current bottom average temperature of the substrates, and sequentially determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrates.

Optionally, determining a top temperature ratio according to the current top temperature, the preset top average temperature and the current bottom average temperature of the substrate comprises determining a first top parameter according to the current top temperature and the current bottom average temperature of the substrate, determining a second top parameter according to the preset top average temperature and the current bottom average temperature of the substrate, and determining the top temperature ratio according to the first top parameter and the second top parameter.

Optionally, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates sequentially according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrates, wherein the adjustment component coefficients of the heat transfer gases corresponding to the substrates comprise the steps of taking the heat transfer gases to be adjusted as heat transfer gases to be adjusted, determining the adjustment component coefficients of the heat transfer gases to be adjusted according to the top temperature ratio and the current component coefficients of the heat transfer gases to be adjusted, taking the next heat transfer gas to be adjusted as the heat transfer gases to be adjusted, and returning to execute the steps of determining the adjustment component coefficients of the heat transfer gases to be adjusted according to the top temperature ratio and the current component coefficients of the heat transfer gases to be adjusted until the adjustment component coefficients of the heat transfer gases are obtained.

Optionally, before obtaining the current top temperature, the preset top average temperature, the current bottom average temperature of the substrate carrier and the substrate accommodating quantity of the CVD reactor, and the current component coefficients of the heat transfer gases corresponding to the substrates, the method further comprises obtaining the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficients of the heat transfer gases in the CVD reactor, determining the adjustment proportion coefficients of the heat transfer gases according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficients of the heat transfer gases, and controlling the CVD reactor to provide the heat transfer gases with the adjustment proportion coefficients.

Optionally, determining the adjustment proportion coefficient of each heat conducting gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat conducting gas comprises determining a first adjustment parameter according to the current top cover temperature and the current water cooling temperature, determining a second adjustment parameter according to the preset top cover temperature and the current water cooling temperature, determining a top cover temperature ratio according to the first adjustment parameter and the second adjustment parameter, taking the heat conducting gas to be adjusted as the heat conducting gas to be adjusted, determining the adjustment proportion coefficient of the heat conducting gas to be adjusted according to the top cover temperature ratio and the current proportion coefficient of the heat conducting gas to be adjusted, taking the next heat conducting gas to be adjusted as the heat conducting gas to be adjusted, and returning to execute the steps of determining the adjustment proportion coefficient of the heat conducting gas to be adjusted according to the top cover temperature ratio and the current proportion coefficient of the heat conducting gas to be adjusted until the adjustment proportion coefficient of each heat conducting gas to be adjusted is obtained.

In a second aspect, the invention provides a temperature control system for a CVD reactor, comprising a substrate stage, a heating device, a heat transfer gas device, a top temperature detection device, a bottom temperature detection device and a controller;

the substrate carrier is used for placing substrates, the heating device is positioned at one side of the substrate carrier, the heat transfer gas device is used for providing heat transfer gas to the substrate carrier, the top temperature detection device is used for detecting the top temperature of each substrate in the CVD reactor, and the bottom temperature detection device is used for detecting the bottom temperature of the substrate carrier in the CVD reactor;

The controller is electrically connected to the heating device, the heat transfer gas device, the top temperature detecting device, and the bottom temperature detecting device, respectively, and is configured to execute the temperature control method of the first aspect.

According to the technical scheme provided by the invention, the bottom heating temperature required by the average temperature of the top of the substrate to reach the preset top average temperature is determined according to the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor by acquiring the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrying platform and the substrate accommodating quantity of the CVD reactor, so that the CVD reactor is controlled to heat the substrate carrying platform by the bottom heating temperature, the temperature of the bottom of the substrate is adjusted, the temperature of the top of the substrate is adjusted, the difference between the average temperature of the top of the substrate and the preset top average temperature is reduced, the average temperature difference of the top of the substrate in different CVD reactors is reduced, the control precision of the CVD reactor on the substrate temperature is improved, and the consistency and the reliability of the semiconductor film layer prepared by different CVD reactors are improved. And then determining the adjusting component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and the current component coefficients of the substrates, controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjusting component coefficients, enabling the current top temperature of the substrates to be closer to the preset top average temperature, further reducing the temperature difference of the tops of the substrates in the CVD reactor, and improving the preparation consistency of the CVD reactor to the film layers of the substrates.

Drawings

FIG. 1 is a flow chart of a first method for controlling the temperature of a CVD reactor according to an embodiment of the present invention;

FIG. 2 is a flow chart of a second method for controlling the temperature of a CVD reactor according to an embodiment of the present invention;

FIG. 3 is a flow chart of a third method for controlling the temperature of a CVD reactor according to an embodiment of the present invention;

FIG. 4 is a flow chart of a fourth method for controlling the temperature of a CVD reactor according to an embodiment of the present invention;

FIG. 5 is a flow chart of a fifth method for controlling the temperature of a CVD reactor according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a temperature control system of a CVD reactor according to an embodiment of the present invention.

Detailed Description

The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.

Fig. 1 is a flowchart of a first method for controlling the temperature of a CVD reactor according to an embodiment of the present invention, where the method is applicable to adjusting the temperature in the CVD reactor, and the method may be performed by a temperature control system of the CVD reactor according to an embodiment of the present invention, where the temperature control system of the CVD reactor may be implemented in hardware and/or software. As shown in fig. 1, the temperature control method of the CVD reactor includes:

S101, acquiring the current top temperature, the preset top average temperature, the current bottom average temperature of a substrate carrying platform and the substrate accommodating quantity of the CVD reactor of each substrate in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

The CVD reactor can deposit a thin film on the surface of a semiconductor substrate such as a substrate, including a wafer. The current top temperature of each substrate represents the current temperature of the top of each substrate or the current temperature of the upper surface of each substrate, the current bottom average temperature of the substrate carrier represents the current temperature of the bottom of the substrate carrier, the preset top average temperature of each substrate represents the preset average temperature of the top of each substrate, and the substrate accommodation quantity of the CVD reactor represents the quantity of substrates which can be accommodated in the CVD reactor.

In order to control the temperature of the substrate, an air flow gap is generally provided between a substrate stage on which the substrate is placed and the substrate, and the temperature of the substrate is adjusted by adjusting the heat conduction degree of the heat transfer gas located in the air flow gap. The heat transfer gas includes hydrogen, nitrogen, helium, argon, or the like, and may be set according to actual needs, and is not particularly limited herein.

Specifically, when the CVD reactor is operated, the CVD reactor includes one or more substrates therein, and the temperature of each substrate in the radial direction affects the deposition of the thin film. Since the temperature of the heat source of the CVD reactor is transferred from the bottom of the substrate to the substrate, parameters related to the temperature of the substrate can be obtained to adjust the current temperature of the substrate. The current top temperature of each substrate can be obtained by a temperature measuring device such as a temperature sensor or the like located on the upper surface side of the substrate. The current bottom average temperature of the substrate stage can be obtained by a temperature measuring device such as a temperature sensor positioned on the lower surface side of the substrate stage. The preset top average temperature may be a temperature value preset by a worker according to actual manufacturing requirements of the substrate. After the preparation of the CVD reactor is completed, the substrate accommodation amount of the CVD reactor is determined, and the substrate accommodation amount of the CVD reactor may be obtained by a nameplate or the like of the CVD reactor. The current composition coefficient of each heat transfer gas corresponding to each substrate, which represents the ratio of the intake air amount of each heat transfer gas, may be obtained by an apparatus for supplying a heat transfer gas in a CVD reactor.

S102, determining the bottom heating temperature of the substrate carrier according to each current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature.

Wherein the bottom heating temperature of the substrate carrier means the temperature that needs to be provided for the bottom of the substrate carrier.

Specifically, the current average temperature of the top of the substrate may be calculated based on the respective current top temperatures and the number of substrate receptacles in the CVD reactor. And calculating the difference between the preset top average temperature and the current average temperature of the top of the substrate to obtain the current top temperature difference. The bottom heating temperature of the substrate is related to the current top temperature difference and the current bottom average temperature of the substrate stage, the current top temperature difference and the current bottom average temperature of the substrate stage can be substituted into a calculation formula of the bottom heating temperature to calculate so as to determine the bottom heating temperature, and then a heat source providing device in the CVD reactor is controlled to heat the substrate stage at the bottom heating temperature so as to control the bottom temperature and the top temperature of the substrate, and further the overall temperature of the substrate is adjusted. When a plurality of CVD reactors are adopted to prepare the same film for a plurality of semiconductor substrates at the same time, the consistency of the reaction temperature in each CVD reactor can be improved by adopting the method, so that the consistency of the prepared film is improved, and the preparation reliability of the CVD reactors is improved.

S103, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and the current component coefficients of the substrates, and controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjustment component coefficients.

The adjustment component coefficient of the heat transfer gas represents the proportion of the air inflow of the heat transfer gas to the total air inflow of the total heat transfer gas after the heat transfer gas is adjusted. The heat energy provided by the heat source providing equipment can be transmitted to the substrate by each heat transfer gas positioned at the bottom of the same substrate, and when the component coefficients of the heat transfer gases are different, the heat conduction performance of the heat transfer gases is different, and the heat conduction effect of the mixed gas formed by the heat transfer gases is also different.

Specifically, the top temperature of the substrate is controlled by controlling the heating source providing device in the CVD reactor to heat at the bottom heating temperature, but this way only rough adjustments of the temperature of the substrate surface are made, i.e. the current top temperature of the substrate surface still has a certain difference from the preset top average temperature. The current average temperature of the top of the substrate can be obtained by calculation according to the current top temperature of each substrate and the substrate accommodating quantity of the CVD reactor, when the difference between the current average temperature of the top of the substrate and the preset top average temperature is small, the current top temperature, the current bottom average temperature and the preset top average temperature can be substituted into the calculation formula of the adjustment component coefficient to calculate according to the calculation formula of the adjustment component coefficient, and the adjustment component coefficient of each heat transfer gas can be obtained. Therefore, the heat transfer performance of the heat transfer gas corresponding to each substrate is adjusted to reduce the temperature difference at the top of different substrates, so that the overall temperature difference of the substrates is reduced, and the consistency and reliability of the CVD reactor for preparing the same film on the surfaces of different substrates are improved.

According to the technical scheme, the current top temperature, the preset top average temperature, the current bottom average temperature of the substrate carrying platform and the substrate containing quantity of the CVD reactor in the CVD reactor and the current component coefficients of the heat transfer gases corresponding to the substrates are obtained, so that the bottom heating temperature required by the average temperature of the top of the substrate to reach the preset top average temperature is determined according to the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate containing quantity of the CVD reactor, the CVD reactor is controlled to heat the substrate carrying platform by the bottom heating temperature, the temperature of the bottom of the substrate is adjusted, the temperature of the top of the substrate is adjusted, the difference between the average temperature of the top of the substrate and the preset top average temperature is reduced, the average temperature difference of the top of the substrate in different CVD reactors is reduced, the control precision of the CVD reactor on the temperature of the substrate is improved, and the consistency and the reliability of the semiconductor film layer prepared by different CVD reactors are improved. And then determining the adjusting component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and the current component coefficients of the substrates, controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjusting component coefficients, enabling the current top temperature of the substrates to be closer to the preset top average temperature, further reducing the temperature difference of the tops of the substrates in the CVD reactor, and improving the film preparation consistency of the CVD reactor to the substrates.

On the basis of the above-described embodiments, the present embodiment describes a case where the bottom heating temperature of the substrate stage is determined based on each of the current top temperature, the preset top average temperature, the current bottom average temperature, and the substrate accommodation number of the CVD reactor. Fig. 2 is a flowchart of a second method for controlling the temperature of a CVD reactor according to an embodiment of the invention, where, as shown in fig. 2, the method for controlling the temperature of the CVD reactor includes:

s201, acquiring the current top temperature, the preset top average temperature, the current bottom average temperature of a substrate carrying platform and the substrate accommodating quantity of the CVD reactor of each substrate in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

S202, determining the current top average temperature according to each current top temperature and the substrate accommodating quantity of the CVD reactor.

Specifically, the ratio of the sum of the respective current top temperatures to the number of substrates held in the CVD reactor is taken as the current top average temperature. Illustratively, the CVD reactor has a substrate holding number of 5, a current top temperature of the first substrate of t1, a current top temperature of the second substrate of t2, a current top temperature of the third substrate of t3, a current top temperature of the fourth substrate of t4, and a current top temperature of the fifth substrate of t5, the current top average temperature is (t1+t2+t3+t4+t5)/5.

S203, determining the bottom heating temperature of the substrate carrier according to the current top average temperature, the preset top average temperature and the current bottom average temperature.

Specifically, the bottom heating temperature is related to the current top average temperature, the preset top average temperature and the current bottom average temperature, and the current top average temperature, the preset top average temperature and the current bottom average temperature can be substituted into a calculation formula of the bottom heating temperature to calculate the bottom heating temperature. The calculation formula of the bottom heating temperature may be obtained by a plurality of experiments or the like, and is not particularly limited herein.

In an alternative embodiment, determining the bottom heating temperature of the substrate carrier based on the current top average temperature, the preset top average temperature, and the current bottom average temperature includes determining a current top temperature difference based on the current top average temperature and the preset top average temperature, and determining the bottom heating temperature based on the current top temperature difference and the current bottom average temperature.

The current top temperature difference value represents the difference degree between the current top average temperature and the preset top average temperature. The larger the absolute value of the current top temperature difference value is, the larger the difference degree between the current top average temperature and the preset top average temperature is, and the smaller the absolute value of the current top temperature difference value is, the smaller the difference degree between the current top average temperature and the preset top average temperature is.

Specifically, a difference between the preset top average temperature and the current top average temperature is calculated, and the difference is used as the current top temperature difference. The bottom heating temperature may affect the top temperature of the substrate, and the desired bottom heating temperature may be determined based on the correspondence between the bottom heating temperature and the current top temperature difference and the current bottom average temperature. Optionally, the calculation formula of the bottom heating temperature is t30_t3=f×Δt0, where Δt0=t20_t2, Δt0 is the current top temperature difference, T20 is the preset top average temperature, T2 is the current top average temperature, T30 is the bottom heating temperature, T3 is the current bottom average temperature, and f is a fixed value. The fixed value f is related to the operation state of the CVD reactor, and the like, and when the CVD reactor is in an operation state where a certain process condition is fixed, for example, the current top average temperature T2 in the CVD reactor is 800 ℃, the current bottom average temperature T3 is 1000 ℃, the preset top average temperature T20 is 900 ℃, the heat source providing device is controlled to heat the substrate carrier at different heating temperatures, and when the heating temperature provided by the heat source providing device is 1100 ℃, the current top average temperature in the CVD reactor reaches 900 ℃, and then the ratio 1 of (1100-1000)/(900-800) is taken as the fixed value f. The fixed value f under different process conditions is different and can be set according to actual needs, and is not particularly limited herein.

S204, controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature.

S205, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and the current component coefficients of the substrates, and controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjustment component coefficients.

According to the technical scheme, the current top average temperature is determined according to the current top temperature and the substrate accommodating quantity of the CVD reactors, and the bottom heating temperature of the substrate is determined according to the current top average temperature, the preset top average temperature and the current bottom average temperature, so that the CVD reactors are controlled to heat the substrate carrier by the bottom heating temperature, the difference between the current top average temperature and the preset top average temperature of the substrate is reduced, the consistency of the top temperatures in the CVD reactors with the same process conditions is improved, the consistency of the prepared film is further improved, and the preparation reliability of the CVD reactors is improved.

On the basis of the above embodiment, the embodiment of the present invention describes the case of determining the adjustment component coefficients of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate accommodation number of the CVD reactor, the current bottom average temperature and each current component coefficient, and fig. 3 is a flowchart of a temperature control method of a third CVD reactor provided in the embodiment of the present invention, and as shown in fig. 3, the temperature control method of the CVD reactor includes:

S301, acquiring the current top temperature, the preset top average temperature, the current bottom average temperature of a substrate carrying platform and the substrate accommodating quantity of the CVD reactor of each substrate in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

S302, determining the bottom heating temperature of the substrate carrier according to each current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature.

S303, determining the current top average temperature according to each current top temperature and the substrate accommodating quantity of the CVD reactor.

Wherein the ratio of the sum of the respective current top temperatures to the number of substrate accommodations of the CVD reactor is the current top average temperature.

S304, judging whether the absolute value of the difference between the preset top average temperature and the current top average temperature is smaller than or equal to the preset difference, and if so, executing S305.

The absolute value of the difference between the preset top average temperature and the current top average temperature represents a value obtained by taking the absolute value of the difference between the preset top average temperature and the current top average temperature. The preset difference may be set according to actual needs, and exemplary, the preset top average temperature is 900 ℃, and the preset difference is 30 ℃, or may be other, which is not limited herein specifically.

Specifically, if the absolute value of the difference between the preset top average temperature and the current top average temperature is greater than the preset difference, it is indicated that the degree of difference between the current top average temperature and the preset top average temperature is greater, at this time, determining the bottom heating temperature of the substrate stage according to each of the current top temperature, the preset top average temperature, the current bottom average temperature of the substrate stage, and the substrate accommodation number of the CVD reactor may be performed back, and controlling the CVD reactor to heat the substrate stage with the bottom heating temperature, so as to reduce the degree of difference between the current top average temperature and the preset top average temperature until the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference.

S305, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the current top temperature, the preset top average temperature, the current bottom average temperature and the current component coefficients of the substrates, and controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjustment component coefficients.

Specifically, if the absolute value of the difference between the preset top average temperature and the current top average temperature is smaller than or equal to the preset difference, it is indicated that the difference between the preset top average temperature and the current top average temperature is smaller, at this time, the heat source providing device in the CVD reactor may be controlled to heat the substrate carrier with the current bottom heating temperature, so that the difference between the current top average temperature and the preset top average temperature is kept in a smaller difference state, and the component coefficients of each heat transfer gas located below the substrate are adjusted to adjust the heat conduction coefficient of the mixed gas composed of the heat transfer gas, so as to adjust the heat transfer efficiency of the substrate carrier to the substrate, further reduce the difference between the current top temperature and the preset top average temperature, and improve the consistency and reliability of the substrate film prepared by the CVD reactor.

It is understood that the underside of different substrates may include the same set of heat transfer gases composed of multiple heat transfer gases, or the underside of different substrates may include different sets of heat transfer gases composed of multiple heat transfer gases. When the same heat transfer gas group consisting of a plurality of heat transfer gases may be included under different substrates, the current top temperature, the preset top average temperature, the current bottom average temperature, and the current component coefficients of the heat transfer gases may be substituted into the calculation formula of the adjustment component coefficients to calculate the adjustment component coefficients of the heat transfer gases corresponding to the substrates, and for the same heat transfer gas, the calculated average value of the adjustment component coefficients of the heat transfer gases corresponding to the substrates may be used as the adjustment component coefficient after the intake air amount of the heat transfer gas is adjusted subsequently. When different heat transfer gas groups formed by a plurality of heat transfer gases can be included below different substrates, that is, the heat transfer gas groups below different substrates are different, for the same substrate, the adjustment component coefficients of each heat transfer gas below the substrate are related to the current top temperature, the preset top average temperature, the current bottom average temperature and each current component coefficient of the substrate, the current top temperature, the preset top average temperature, the current bottom average temperature and each current component coefficient can be substituted into the calculation formula of the adjustment component coefficients in sequence, so as to calculate and obtain the adjustment component coefficients of each heat transfer gas below the substrate, and the heat transfer gas device in the CVD reactor is controlled to adjust the component coefficients of each heat transfer gas below the substrate by each adjustment component coefficient, and the adjustment component coefficients of each heat transfer gas in the heat transfer gas groups below other substrates can refer to the description above, and are not repeated here.

According to the technical scheme, the bottom heating temperature of the substrate carrying platform is determined according to the current top temperature, the preset top average temperature, the current bottom average temperature of the substrate carrying platform and the substrate accommodating quantity of the CVD reactor, the CVD reactor is controlled to heat the substrate carrying platform by the bottom heating temperature, the adjusted current top average temperature is determined according to the current top temperature and the substrate accommodating quantity of the CVD reactor, if the absolute value of the difference between the preset top average temperature and the adjusted current top average temperature is smaller than or equal to the preset difference, the adjustment component coefficients of the heat transfer gases corresponding to the substrates are determined according to the current top temperature of the substrates, the preset top average temperature, the current bottom average temperature of the substrate carrying platform and the current component coefficients of the substrates, the component coefficients of the heat transfer gases are adjusted by the adjustment component coefficients in the CVD reactor are controlled, the heat conductivity of the heat transfer gases is adjusted, the heat transfer efficiency of the substrate carrying platform is adjusted, the difference between the current top temperature and the preset top average temperature is reduced, the temperature control precision of the CVD reactor is improved, and the working reliability of the CVD reactor is improved.

In an alternative embodiment, fig. 4 is a flowchart of a method for controlling a temperature of a fourth CVD reactor according to an embodiment of the invention, where the method for controlling a temperature of a CVD reactor includes:

S401, acquiring the current top temperature, the preset top average temperature, the current bottom average temperature of a substrate carrying platform and the substrate accommodating quantity of the CVD reactor of each substrate in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

S402, determining the bottom heating temperature of the substrate carrier according to each current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature.

S403, determining the current top average temperature according to each current top temperature and the substrate accommodating quantity of the CVD reactor.

S404, judging whether the absolute value of the difference between the preset top average temperature and the current top average temperature is smaller than or equal to the preset difference, and if yes, executing S405.

S405, determining a top temperature ratio according to the current top temperature, the preset top average temperature and the current bottom average temperature of the substrate.

Specifically, the top temperature ratio is related to the current top temperature, the preset top average temperature and the current bottom average temperature of the substrate carrier, and the current top temperature, the preset top average temperature and the current bottom average temperature of the substrate carrier can be substituted into a calculation formula of the top temperature ratio to calculate and obtain the top temperature ratio.

Optionally, the top temperature ratio is determined according to the current top temperature of the substrate, the preset top average temperature and the current bottom average temperature of the substrate carrier, and the method comprises the steps of determining a first top parameter according to the current top temperature and the current bottom average temperature of the substrate, determining a second top parameter according to the preset top average temperature and the current bottom average temperature of the substrate, and determining the top temperature ratio according to the first top parameter and the second top parameter.

Specifically, the first top parameter is the difference between the current top temperature and the current bottom average temperature of the substrate stage, that is, the actual temperature loss during the transfer of the current bottom average temperature of the substrate stage to the top of the substrate via the heat transfer gas. The second top parameter is the difference between the preset top average temperature and the current bottom average temperature of the substrate stage, that is, the theoretical temperature loss amount in the process of transmitting the current bottom average temperature of the substrate stage to the top of the substrate through the heat transfer gas when the temperature of the top of the substrate is the preset top average temperature. And taking the ratio of the first top parameter to the second top parameter as a top temperature ratio, namely the ratio of the actual temperature loss amount to the theoretical temperature loss amount, so as to adjust the component coefficients of each heat transfer gas according to the top temperature ratio, further adjust the efficiency and the loss amount of the transmission of the temperature at the bottom of the substrate to the top, and reduce the difference between the current top temperature of the substrate and the preset top average temperature.

S406, according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrate, sequentially determining the adjustment component coefficients of the heat transfer gases corresponding to the substrate, and controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjustment component coefficients.

Specifically, the adjustment component coefficient of each heat transfer gas is related to the top temperature ratio and the current component coefficient of each heat transfer gas, and the top temperature ratio and each current component coefficient can be substituted into the calculation formula of the adjustment component coefficient in sequence to calculate, so as to obtain the adjustment component coefficient of each heat transfer gas.

Optionally, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrate in sequence according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrate, wherein the adjustment component coefficients of the heat transfer gases corresponding to the substrate comprise the step of taking the heat transfer gases to be adjusted as the heat transfer gases to be adjusted, the step of determining the adjustment component coefficients of the heat transfer gases to be adjusted according to the top temperature ratio and the current component coefficients of the heat transfer gases to be adjusted, the step of taking the next heat transfer gas to be adjusted as the heat transfer gases to be adjusted, and the step of returning to execute the step of determining the adjustment component coefficients of the heat transfer gases to be adjusted according to the top temperature ratio and the current component coefficients of the heat transfer gases to be adjusted until the adjustment component coefficients of the heat transfer gases are obtained.

Specifically, when a plurality of heat transfer gases are included below the substrate, in order to improve the accuracy of determining the component coefficients of each heat transfer gas, the heat transfer gas to be adjusted may be used as the heat transfer gas to be adjusted, then the product of the current component coefficient of the heat transfer gas to be adjusted and the top temperature ratio is used as the adjustment component coefficient of the heat transfer gas to be adjusted, then the next heat transfer gas to be adjusted is used as the heat transfer gas to be adjusted, and the step of using the product of the current component coefficient of the heat transfer gas to be adjusted and the top temperature ratio as the adjustment component coefficient of the heat transfer gas to be adjusted is repeatedly performed until the adjustment component coefficient of each heat transfer gas is obtained, so that the adjustment component coefficient of each heat transfer gas below the substrate to be adjusted is adjusted according to the adjustment component coefficient of each heat transfer gas, and then the heat transfer performance of the mixed gas composed of each heat transfer gas is adjusted, thereby improving the accuracy and reliability of temperature control on the adjusted substrate.

It will be appreciated that the above description has been given by taking the case of determining the adjustment component coefficients of each heat transfer gas in sequential order as an example, and in another alternative embodiment, the adjustment component coefficients of each heat transfer gas may be calculated synchronously for each heat transfer gas located under the same substrate, that is, the product of the current component coefficient of each heat transfer gas and the top temperature ratio is used as the adjustment component coefficient of each heat transfer gas, so as to improve the calculation efficiency. The manner of determining the adjustment component system of each heat transfer gas may be set according to actual needs, and is not particularly limited herein.

When different heat transfer gas groups formed by a plurality of heat transfer gases are included below different substrates, the heat transfer gases corresponding to the different substrates need to be respectively adjusted, the determination mode of the adjustment component proportion of the heat transfer gases corresponding to the substrates can be synchronous or sequential, the synchronous operation is that the adjustment component proportion of the heat transfer gases corresponding to the substrates is synchronously calculated by adopting the step of determining the adjustment component proportion of the heat transfer gases corresponding to the substrates, and the sequential operation is that the adjustment component proportion of the heat transfer gases corresponding to one substrate is sequentially determined by adopting the step of determining the adjustment component proportion of the heat transfer gases corresponding to the substrates after the adjustment component proportion of the heat transfer gases corresponding to the other substrates is completely determined.

According to the technical scheme, when the absolute value of the difference between the preset top average temperature and the current top average temperature is smaller than or equal to the preset difference, the top temperature ratio is determined according to the current top temperature of the substrate, the preset top average temperature and the current bottom average temperature of the substrate carrying table, and then the adjustment component coefficients of the heat transfer gases corresponding to the substrate are sequentially determined according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrate, so that the calculation accuracy of the adjustment component coefficients of the heat transfer gases is improved, and after the CVD reactor is controlled to adjust the component coefficients of the heat transfer gases by the adjustment component coefficients, the adjustment reliability of the heat transfer performance of the heat transfer gases and the adjustment reliability of the top temperature of the substrate can be improved, and the control accuracy of the substrate temperature is further improved.

In an alternative embodiment, fig. 5 is a flowchart of a method for controlling a temperature of a fifth CVD reactor according to an embodiment of the invention, where the method for controlling a temperature of a CVD reactor includes:

s501, acquiring the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportionality coefficient of each heat conducting gas in the CVD reactor.

The current top cover temperature refers to the current temperature of the top cover in the CVD reactor, the current water cooling temperature refers to the current temperature of water cooling liquid, and the current proportion coefficient of each heat conducting gas refers to the current proportion coefficient of each heat conducting gas. The preset top cover temperature refers to a theoretical temperature preset for the top cover, and can be set according to actual needs, and is not particularly limited herein.

Specifically, the current top cover temperature can be obtained through a temperature detection device positioned at the top of the top cover, the current water cooling temperature can be obtained through a water cooling providing device, and the preset top cover temperature can be a temperature value preset by a worker according to the actual preparation requirement of the substrate. The current proportion coefficient of each heat conducting gas is obtained through the heat conducting gas providing device.

S502, determining the adjustment proportion coefficient of each heat-conducting gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat-conducting gas, and controlling the CVD reactor to provide each heat-conducting gas with each adjustment proportion coefficient.

The adjustment proportion coefficient of the heat-conducting gas represents the proportion of the air inflow of the heat-conducting gas to the total air inflow of the total heat-conducting gas after the heat-conducting gas is adjusted.

Specifically, the temperature of the top cover can affect the temperature inside the CVD reactor, and the temperature of the top cover is mainly transmitted to the water-cooling liquid through the heat-conducting gas, so that the current top cover temperature, the current water-cooling temperature, the preset top cover temperature and the current proportionality coefficient of each heat-conducting gas can be substituted into a calculation formula of the adjustment proportionality coefficient to calculate, so as to determine the adjustment proportionality coefficient of each heat-conducting gas. Based on each adjustment proportion coefficient, the proportion coefficient of each heat conducting gas is adjusted so as to adjust the heat conducting property of the mixed gas group consisting of the heat conducting gases, and then the temperature of the top cover can be transmitted to the water-cooling liquid at a faster or slower speed, so that the difference between the current top cover temperature and the preset top cover temperature is reduced, and the control reliability of the top cover temperature is improved.

Optionally, determining the adjustment proportion coefficient of each heat conducting gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat conducting gas, including determining a first adjustment parameter according to the current top cover temperature and the current water cooling temperature, determining a second adjustment parameter according to the preset top cover temperature and the current water cooling temperature, determining a top cover temperature ratio according to the first adjustment parameter and the second adjustment parameter, using the heat conducting gas to be adjusted as the heat conducting gas to be adjusted, determining the adjustment proportion coefficient of the heat conducting gas to be adjusted according to the top cover temperature ratio and the current proportion coefficient of the heat conducting gas to be adjusted, using the next heat conducting gas to be adjusted as the heat conducting gas to be adjusted, and returning to execute the steps of determining the adjustment proportion coefficient of the heat conducting gas to be adjusted according to the top cover temperature ratio and the current proportion coefficient of the heat conducting gas to be adjusted until the adjustment proportion coefficient of each heat conducting gas to be adjusted is obtained.

Specifically, the first adjustment parameter is the difference between the current top cover temperature and the current water cooling temperature, that is, the actual temperature loss amount in the process that the current top cover temperature is transmitted to the water cooling liquid through the heat conducting gas. The second adjustment parameter is the difference between the preset top cover temperature and the current water cooling temperature, namely the theoretical temperature loss amount in the process that the preset top cover temperature is transmitted to the water cooling liquid through the heat conducting gas. And taking the ratio of the first adjusting parameter to the second adjusting parameter as a top cover temperature ratio. And taking the heat-conducting gas to be regulated as the heat-conducting gas to be regulated so as to respectively determine the regulation proportion coefficient of each heat-conducting gas, thereby improving the determination reliability of the regulation proportion coefficient of each heat-conducting gas. Taking the product of the temperature ratio of the top cover and the current proportion coefficient of the heat conducting gas to be adjusted as the adjustment proportion coefficient of the heat conducting gas to be adjusted, taking the next heat conducting gas to be adjusted as the heat conducting gas to be adjusted, and returning to execute the step of taking the product of the current proportion coefficient of the heat conducting gas to be adjusted and the temperature ratio of the top cover as the adjustment proportion coefficient of the heat conducting gas to be adjusted until the adjustment proportion coefficient of each heat conducting gas is obtained, so as to adjust the proportion coefficient of each heat conducting gas according to the adjustment proportion coefficient of each heat conducting gas, further adjust the heat conducting performance of the mixed gas formed by each heat conducting gas, change the efficiency and loss amount of the heat conducting gas to the water cooling liquid transmission of the temperature of the top cover, reduce the difference between the current top cover temperature and the preset top cover temperature, and improve the temperature control accuracy and reliability of the top cover. The calculation formula of the adjustment scaling parameters is shown as follows, b12=b11× (Δt01++Δt00), Δt01=t4-T5, Δt00=t40-T5, T4 is the current top cover temperature, T5 is the current water cooling temperature, T40 is the preset top cover temperature, Δt01 is the first adjustment parameter, Δt00 is the second adjustment parameter, b11 is the current scaling parameter, and b12 is the adjustment scaling parameter.

It will be appreciated that the foregoing only shows that the adjustment proportionality coefficients of the heat-conducting gases are sequentially determined, and the determination of the adjustment proportionality coefficients of the heat-conducting gases may also be performed synchronously, and may be set according to actual needs, which is not particularly limited herein.

S503, obtaining the current top temperature, the preset top average temperature, the current bottom average temperature of the substrate carrier and the substrate accommodating quantity of the CVD reactor of each substrate in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

S504, determining the bottom heating temperature of the substrate carrier according to each current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature.

S505, determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates according to the preset top average temperature, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and the current component coefficients of the substrates, and controlling the CVD reactor to adjust the component coefficients of the heat transfer gases according to the adjustment component coefficients.

According to the technical scheme, the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat conducting gas in the CVD reactor are obtained, so that the adjustment proportion coefficient required to be adjusted for each heat conducting gas is determined according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat conducting gas, the CVD reactor is controlled to adjust the proportion coefficient of each heat conducting gas according to the adjustment proportion coefficient, the heat conducting performance of the mixed gas formed by each heat conducting gas is further adjusted, the efficiency and the loss amount of the heat conducting gas transmitted to the water cooling liquid by the temperature of the top cover are changed, the difference between the current top cover temperature and the preset top cover temperature is reduced, and the temperature control accuracy and the reliability of the top cover are improved. Therefore, the influence degree of the temperature of the top cover on the temperature of the substrate can be reduced, and the control accuracy and the control reliability of the subsequent temperature adjustment of the substrate are improved.

Fig. 6 is a schematic structural diagram of a temperature control system of a CVD reactor according to an embodiment of the present invention, where the temperature control system of a CVD reactor includes a substrate stage 31, a heating device 2, a heat transfer gas device 20, a top temperature detecting device 11, a bottom temperature detecting device 12, and a controller 10, the substrate stage 31 is used for placing a substrate, the heating device 2 is located at one side of the substrate stage 31, the heat transfer gas device 20 is used for providing a heat transfer gas to the substrate stage 31, the top temperature detecting device 11 is used for detecting the top temperature of each substrate in the CVD reactor, the bottom temperature detecting device 12 is used for detecting the bottom temperature of the substrate stage 31 in the CVD reactor, and the controller 10 is electrically connected to the heating device 2, the heat transfer gas device 20, the top temperature detecting device 11, and the bottom temperature detecting device 12, respectively.

The substrate carrier 31 includes a base 3, a plurality of base trays 4, and second air flow gaps 34 that are set in one-to-one correspondence with the base trays 4, where the shapes of the base 3 and the base trays 4 may be set according to actual needs, and the base 3 and the base trays 4 may be circular, for example, or may be other. The number of the base trays 4 may be set according to actual needs, and the number of the base trays 4 is exemplified by 5, but may be other, and is not particularly limited herein. The top temperature detecting device 11 and the bottom temperature detecting device 12 comprise temperature measuring devices such as infrared temperature measuring sensors, and can be set according to actual needs. The heating device 2 includes a heating member such as a coil. The heat transfer gas device 20 is used to provide a heat transfer gas to the corresponding gas flow gap of each substrate, and the heat transfer gas device 20 provides a mixed gas of two heat transfer gases to the gas flow gap, wherein the current component coefficient of the first heat transfer gas is 0.3, and the current component coefficient of the second heat transfer gas is 0.7, which can be other, but is not limited herein.

Specifically, the heating device 2 is located on a side of the substrate stage 31 facing away from the substrate placement surface, that is, the heating device 2 is located at the bottom of the substrate stage 31, and the heating device 2 indirectly heats the substrate placed on the substrate stage 31 through the substrate stage 31. The temperature control system of the CVD reactor further comprises an air passage rotating shaft 1, the air passage rotating shaft 1 can drive the substrate carrying table 31 to rotate around the central axis of the air passage rotating shaft 1, the air passage rotating shaft 1 comprises a plurality of air passage pipelines communicated with the second air flow gaps 34, each air passage pipeline is communicated with a different air supply port of the heat transfer air device 20, and the heat transfer air in the second air flow gaps 34 can enable the substrate tray 4 and the substrate positioned on the substrate tray 4 to rotate along the central axis of the substrate tray 4 on one hand, and can control the efficiency of heat supplied by the heating device 2 to be transferred to the substrate on the other hand. Along the axial direction Z of the air passage rotating shaft 1, the top temperature detecting device 11 is located at a side of the base tray 4 away from the heating device 2 so as to obtain the current top temperature of the substrates located on the upper surface of the base tray 4, and since the substrate carrying table 31 rotates around the central axis of the air passage rotating shaft 1, the detecting time of the top temperature detecting device 11 to the current top temperature of each substrate can be determined according to the rotating speed of the air passage rotating shaft 1, so that the detecting accuracy and reliability of the current top temperature of each substrate can be improved. Illustratively, when the top temperature detecting device 11 is in an operating state, the top temperature detecting device 11 may detect the top temperature of the first substrate at the time of 1 st second, 5 th second, 10 th second, and 5×n th second, and then the top temperature detecting device 11 is controlled to obtain the top temperatures of the first substrate at the time, respectively, and the obtained values obtained by averaging the plurality of top temperatures are used as the current top temperature of the first substrate.

It will be appreciated that, since the substrate stage 31 may be rotated, the bottom temperature detecting device 12 may collect the current bottom temperatures of the substrate stage 31 at various times in a short period of time, and take the average value of the respective current bottom temperatures as the current bottom average temperature. The top temperature detecting device 11 and the bottom temperature detecting device 12 are respectively and electrically connected with the controller 10, the controller 10 can obtain the current top temperature of each substrate measured by the top temperature detecting device 11 and the current bottom average temperature of the substrate carrier measured by the bottom temperature detecting device 12, and the controller 10 controls the working states of the heating device 2 and the heat transfer gas device 20 according to the current top temperature of each substrate, the current bottom average temperature of the substrate carrier and the internal processing logic, so as to improve the temperature control reliability of the substrates. The specific processing logic of the controller 10 may refer to the temperature control method provided in the above embodiment, and will not be described herein.

In an alternative embodiment, with continued reference to fig. 6, the temperature control system of the cvd reactor further comprises a top cover 5, a first air flow gap 6, an upper cover 7, a top cover temperature detecting device 8, a heat conducting gas device 30, and a heat conducting gas channel 9 in the upper cover 7, the upper cover 7 being located at a side of the top cover 5 facing away from the substrate stage 31, the top cover temperature detecting device 8 being located in the upper cover 7, the upper cover 7 comprising a water-cooled liquid, the top cover temperature detecting device 8 comprising a temperature measuring device such as an infrared temperature measuring sensor, the top cover temperature detecting device 8 being electrically connected to the controller 10 for transmitting the obtained current top cover temperature to the controller 10. The heat conducting gas device 30 may provide heat conducting gas to the first air flow gap 6 through the heat conducting gas channel 9, and the heat conducting gas device 30 is electrically connected with the controller 10, so that the heat conducting gas device 30 may provide the proportionality coefficient of each provided heat conducting gas to the controller 10, so that the controller 10 controls the working state of the heat conducting gas device 30 according to the current top cover temperature and the current proportionality coefficient of each heat conducting gas, and the specific control principle may refer to the temperature control method provided in the above embodiment, which is not described herein again.

It should be noted that the temperature control system of the CVD reactor further includes a bottom plate 13 and a side wall 14, and the bottom plate 13, the side wall 14 and the upper cover 7 form a closed reaction chamber to improve the purity of the semiconductor material prepared on the surface of the substrate.

The temperature control system of the CVD reactor provided by the embodiment of the invention can execute the temperature control method provided by any embodiment of the invention, and has the corresponding functional modules and beneficial effects of the execution method, and the same points can be described with reference to the above.

Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims

1. A method for controlling the temperature of a CVD reactor, comprising:

Determining an adjustment component coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate accommodating quantity of the CVD reactor, the current bottom average temperature and each current component coefficient, and controlling the CVD reactor to adjust the component coefficient of each heat transfer gas according to the adjustment component coefficient;

wherein determining an adjusted composition coefficient for each of the heat transfer gases corresponding to each of the substrates based on the preset top average temperature for each of the substrates, the current top temperature, a substrate holding number for the CVD reactor, the current bottom average temperature, and each of the current composition coefficients, comprises:

Determining a current top average temperature based on each of the current top temperatures and a number of substrate holds for the CVD reactor;

Judging whether the absolute value of the difference between the preset top average temperature and the current top average temperature is smaller than or equal to a preset difference;

if so, determining an adjustment component coefficient of each heat transfer gas corresponding to each substrate according to the current top temperature, the preset top average temperature, the current bottom average temperature and each current component coefficient of each substrate.

2. The method of claim 1, wherein determining a bottom heating temperature of the substrate stage based on each of the current top temperature, the preset top average temperature, the current bottom average temperature, and a substrate holding number of the CVD reactor, comprises:

determining a current top average temperature based on each of said current top temperatures and a number of substrate holds for said CVD reactor;

And determining the bottom heating temperature of the substrate carrying platform according to the current top average temperature, the preset top average temperature and the current bottom average temperature.

3. The method of claim 2, wherein determining the bottom heating temperature of the substrate stage based on the current top average temperature, the preset top average temperature, and the current bottom average temperature comprises:

Determining a current top temperature difference value according to the current top average temperature and the preset top average temperature;

And determining the bottom heating temperature according to the current top temperature difference value and the current bottom average temperature.

4. The method according to claim 1, wherein determining the adjusted composition coefficients for each of the heat transfer gases corresponding to each of the substrates based on the current top temperature, the preset top average temperature, the current bottom average temperature, and each of the current composition coefficients for each of the substrates comprises:

determining a top temperature ratio according to the current top temperature, the preset top average temperature and the current bottom average temperature of the substrate;

And determining the adjustment component coefficients of the heat transfer gases corresponding to the substrates in sequence according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrates.

5. The method of claim 4, wherein determining a top temperature ratio based on the current top temperature, the preset top average temperature, and the current bottom average temperature of the substrate comprises:

determining a first top parameter based on the current top temperature and the current bottom average temperature of the substrate;

Determining a second top parameter according to the preset top average temperature and the current bottom average temperature of the substrate;

And determining the top temperature ratio according to the first top parameter and the second top parameter.

6. The method according to claim 4, wherein sequentially determining the adjusted composition coefficients for each of the heat transfer gases for the substrate based on the top temperature ratio and the current composition coefficients for each of the heat transfer gases for the substrate, comprises:

taking the heat transfer gas to be regulated as heat transfer gas to be regulated;

Determining the adjustment component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted;

Taking the next heat transfer gas to be regulated as the heat transfer gas to be regulated, and returning to execute the step of determining the regulating component coefficients of the heat transfer gas to be regulated according to the top temperature ratio and the current component coefficients of the heat transfer gas to be regulated until the regulating component coefficients of the heat transfer gases are obtained.

7. The method according to claim 1, further comprising, before obtaining a current top temperature of each substrate in the CVD reactor, a preset top average temperature, a current bottom average temperature of a substrate stage, and a substrate accommodation amount of the CVD reactor, and a current composition coefficient of each heat transfer gas corresponding to each substrate:

acquiring the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat conducting gas in the CVD reactor;

And determining an adjustment proportion coefficient of each heat-conducting gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportion coefficient of each heat-conducting gas, and controlling the CVD reactor to provide each heat-conducting gas with each adjustment proportion coefficient.

8. The method of claim 7, wherein determining the adjusted scaling factor for each of the thermally conductive gases based on the current header temperature, the current water-cooled temperature, the preset header temperature, and the current scaling factor for each of the thermally conductive gases comprises:

determining a first adjustment parameter according to the current top cover temperature and the current water cooling temperature;

determining a second adjustment parameter according to the preset top cover temperature and the current water cooling temperature;

Determining a top cover temperature ratio according to the first adjustment parameter and the second adjustment parameter;

taking the heat conducting gas to be adjusted as heat conducting gas to be adjusted;

Determining the adjustment proportion coefficient of the heat-conducting gas to be adjusted according to the temperature ratio of the top cover and the current proportion coefficient of the heat-conducting gas to be adjusted;

And taking the next heat conducting gas to be regulated as the heat conducting gas to be regulated, and returning to execute the step of determining the regulation proportion coefficient of the heat conducting gas to be regulated according to the temperature ratio of the top cover and the current proportion coefficient of the heat conducting gas to be regulated until the regulation proportion coefficient of each heat conducting gas is obtained.

9. The temperature control system of the CVD reactor is characterized by comprising a substrate carrying platform, a heating device, a heat transfer gas device, a top temperature detection device, a bottom temperature detection device and a controller;

The controller is electrically connected to the heating means, the heat transfer gas means, the top temperature detecting means and the bottom temperature detecting means, respectively, for executing the temperature control method according to any one of claims 1 to 8.