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CN114388420A - Temporary substrate, manufacturing method thereof and micro light-emitting chip transfer method - Google Patents

Temporary substrate, manufacturing method thereof and micro light-emitting chip transfer method Download PDF

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CN114388420A
CN114388420A CN202011119955.0A CN202011119955A CN114388420A CN 114388420 A CN114388420 A CN 114388420A CN 202011119955 A CN202011119955 A CN 202011119955A CN 114388420 A CN114388420 A CN 114388420A
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adhesive layer
layer
chip
temporary substrate
electrode
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CN114388420B (en
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蒲洋
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/036Manufacture or treatment of packages

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Abstract

本发明涉及一种临时基板及其制作方法,及微型发光芯片转移方法。临时基板的粘附胶层之上设有遮挡层,遮挡层上设置有供微型发光芯片的至少两个电极分别插入并与粘附胶层形成粘接的电极容纳孔,且至少一部分相邻的芯片区域之间设有供粘附胶层的胶体溢出的溢出口,这样在将微型发光芯片从承载基板转移至临时基板过程中,微型发光芯片的电极对临时基板上的粘附胶层挤压过程中,粘附胶层的胶体受挤压变形时可从溢出口溢出,同时微型发光芯片的两电极之间设有遮挡层可阻挡胶体变形与微型发光芯片的外延层接触,从而使得转移至临时基板上的微型发光芯片只有电极与粘附胶层形成粘接,可保证微型发光芯片后续的正常转移。

Figure 202011119955

The present invention relates to a temporary substrate and a manufacturing method thereof, and a transfer method of a micro light-emitting chip. A shielding layer is arranged on the adhesive layer of the temporary substrate, and the shielding layer is provided with electrode accommodating holes for inserting at least two electrodes of the micro light-emitting chip respectively and forming bonding with the adhesive layer, and at least a part of the adjacent electrodes is provided with an electrode receiving hole. There is an overflow port for the colloid of the adhesive layer to overflow between the chip areas, so that during the process of transferring the micro light-emitting chip from the carrier substrate to the temporary substrate, the electrodes of the micro light-emitting chip press the adhesive layer on the temporary substrate. During the process, the colloid of the adhesive layer can overflow from the overflow port when it is squeezed and deformed. At the same time, a shielding layer is provided between the two electrodes of the micro light-emitting chip to prevent the deformation of the colloid from contacting the epitaxial layer of the micro light-emitting chip, so that the transfer to The micro-light-emitting chip on the temporary substrate only has the electrodes and the adhesive layer to form a bond, which can ensure the subsequent normal transfer of the micro-light-emitting chip.

Figure 202011119955

Description

临时基板及其制作方法,及微型发光芯片转移方法Temporary substrate and manufacturing method thereof, and transfer method of micro light-emitting chip

技术领域technical field

本发明涉及半导体器件领域,尤其涉及一种临时基板及其制作方法,及微型发光芯片转移方法。The invention relates to the field of semiconductor devices, in particular to a temporary substrate and a method for making the same, and a method for transferring a micro light-emitting chip.

背景技术Background technique

目前,micro-LED(micro-Light Emitting Diode,微型发光二极管)面临的一个关键技术就是要通过巨量转移将micro-LED芯片转移到显示背板上。相关技术中,一般会通过在第一临时基板上设置可解粘的胶层,通过该可解粘胶层通过粘附将micro-LED芯片从生长基板上转移至第一临时基板,再采用类似的方式使用第二临时基板将micro-LED芯片从第一临时基板转移至显示背板。在这个过程中,第一临时基板或第二临时基板上设置的胶层受到micro-LED芯片的电极的挤压会有一定的形变后可能与micro-LED芯片的外延层接触形成粘接,但是由于其又非完全流体状,与外延层粘接后不会再流平,冷却固定后会造成micro-LED芯片转移困难。At present, a key technology facing micro-LED (micro-Light Emitting Diode) is to transfer micro-LED chips to the display backplane through mass transfer. In the related art, generally, a releasable adhesive layer is provided on the first temporary substrate, and the micro-LED chip is transferred from the growth substrate to the first temporary substrate through adhesion through the releasable adhesive layer. A second temporary substrate is used to transfer the micro-LED chips from the first temporary substrate to the display backplane. In this process, the adhesive layer set on the first temporary substrate or the second temporary substrate will be deformed to a certain extent by the extrusion of the electrodes of the micro-LED chip, and may contact with the epitaxial layer of the micro-LED chip to form a bond, but Because it is not completely fluid, it will not be leveled after bonding with the epitaxial layer, which will cause difficulties in transferring the micro-LED chip after cooling and fixing.

因此,如何避免LED芯片在转移过程中其外延层与胶体形成粘接,导致后续转移困难,是亟需解决的问题。Therefore, how to avoid the bonding between the epitaxial layer and the colloid of the LED chip during the transfer process, resulting in difficulty in subsequent transfer, is an urgent problem to be solved.

发明内容SUMMARY OF THE INVENTION

鉴于上述相关技术的不足,本申请的目的在于提供一种临时基板及其制作方法,及微型发光芯片转移方法,旨在解决相关技术中,LED芯片在转移过程中其外延层与胶体形成粘接,导致后续转移困难的问题。In view of the above-mentioned deficiencies in the related art, the purpose of the present application is to provide a temporary substrate and a method for making the same, and a method for transferring a micro light-emitting chip, aiming to solve the problem that the epitaxial layer of the LED chip and the colloid form adhesion during the transfer process in the related art. , leading to the difficulty of subsequent transfer.

一种临时基板,包括:A temporary substrate comprising:

基板本体;substrate body;

设置于所述基板本体上的粘附胶层;an adhesive layer disposed on the substrate body;

设置于所述粘附胶层上的遮挡层,所述遮挡层上具有多个芯片区域;所述芯片区域内设有至少两个与所述粘附胶层相通的电极容纳孔,以供微型发光芯片的至少两个电极分别插入并与所述粘附胶层形成粘接;至少一部分相邻的所述芯片区域之间设有供所述粘附胶层的胶体溢出的溢出口。A shielding layer disposed on the adhesive layer, the shielding layer has a plurality of chip areas; the chip area is provided with at least two electrode accommodating holes communicated with the adhesive layer for micro At least two electrodes of the light-emitting chip are respectively inserted and bonded with the adhesive layer; at least a part of adjacent chip regions are provided with overflow ports for the colloid of the adhesive layer to overflow.

上述临时基板,其粘附胶层之上设有遮挡层,遮挡层上设置有供对应的微型发光芯片的至少两个电极分别插入并与粘附胶层形成粘接的电极容纳孔,且至少一部分相邻的芯片区域之间设有供粘附胶层的胶体溢出的溢出口,这样在将微型发光芯片从承载基板转移至临时基板过程中,微型发光芯片的电极对临时基板上的粘附胶层挤压过程中,粘附胶层的胶体受挤压变形时可从溢出口溢出,同时微型发光芯片的两电极之间设有遮挡层可阻挡胶体变形与微型发光芯片的外延层接触,从而使得转移至临时基板上的微型发光芯片只有电极与粘附胶层形成粘接,其他区域都不与粘附胶层接触,从而可保证微型发光芯片后续的正常转移。The above temporary substrate is provided with a shielding layer on the adhesive layer, and the shielding layer is provided with electrode accommodating holes for inserting at least two electrodes of the corresponding micro light-emitting chip respectively and forming adhesion with the adhesive layer, and at least A part of adjacent chip areas is provided with an overflow port for the colloid of the adhesive layer to overflow, so that during the process of transferring the micro light-emitting chip from the carrier substrate to the temporary substrate, the electrodes of the micro light-emitting chip adhere to the temporary substrate. During the extrusion process of the adhesive layer, the colloid adhering to the adhesive layer can overflow from the overflow port when it is squeezed and deformed. At the same time, a shielding layer is provided between the two electrodes of the micro light-emitting chip to prevent the deformation of the colloid from contacting the epitaxial layer of the micro light-emitting chip. As a result, only the electrodes of the micro light-emitting chip transferred to the temporary substrate are bonded to the adhesive layer, and other areas are not in contact with the adhesive layer, thereby ensuring the subsequent normal transfer of the micro light-emitting chip.

可选地,在本实施例的一种示例中,所述临时基板还包括设置于所述电极容纳孔的侧壁上的膨胀材料层,所述膨胀材料层在所述电极插入所述电极容纳孔并与所述粘附胶层形成粘接后,在设定膨胀环境下产生膨胀,并与所述电极紧密贴合。Optionally, in an example of this embodiment, the temporary substrate further includes an expansion material layer disposed on a side wall of the electrode accommodating hole, and the expansion material layer is inserted into the electrode accommodating hole when the electrode is inserted into the electrode accommodating hole. After the hole is formed and bonded with the adhesive layer, it expands under a set expansion environment, and closely adheres to the electrode.

通过电极容纳孔中的膨胀材料层在膨胀后与电极形成紧密贴合,可进一步避免胶体在挤压过程中沿着电极与电极容纳孔侧壁之间的缝隙溢出,因此可进一步提升保证微型发光芯片只有电极与粘附胶层形成粘接,其他区域都不与粘附胶层接触。The expansion material layer in the electrode accommodating hole forms a close contact with the electrode after expansion, which can further prevent the colloid from overflowing along the gap between the electrode and the side wall of the electrode accommodating hole during the extrusion process, so it can further improve the guarantee of micro-luminescence Only the electrodes of the chip form a bond with the adhesive layer, and other areas are not in contact with the adhesive layer.

可选地,在本实施例的一种示例中,所述临时基板还包括设置于所述遮挡层上,将所述溢出口与所述芯片区域隔离的隔离墙。Optionally, in an example of this embodiment, the temporary substrate further includes an isolation wall disposed on the shielding layer and isolating the overflow port from the chip area.

通过该隔离墙的设置,可避免从溢出口溢出的胶体流向芯片区域,从而可进一步避免微型发光芯片的侧面与溢出的胶体接触,可进一步保证微型发光芯片后续的顺利转移。The arrangement of the isolation wall can prevent the colloid overflowing from the overflow port from flowing to the chip area, thereby further preventing the side of the micro light emitting chip from contacting the overflowing colloid, and further ensuring the subsequent smooth transfer of the micro light emitting chip.

基于同样的发明构思,本申请还提供一种临时基板的制作方法,包括:Based on the same inventive concept, the present application also provides a method for manufacturing a temporary substrate, including:

在基板本体上形成粘附胶层;forming an adhesive layer on the substrate body;

在所述粘附胶层上形成遮挡层,所述遮挡层上具有多个芯片区域;forming a shielding layer on the adhesive layer, the shielding layer has a plurality of chip areas;

在所述芯片区域内形成至少两个与所述粘附胶层相通的电极容纳孔,以供微型发光芯片的至少两个电极分别插入并与所述粘附胶层形成粘接,以及在至少一部分相邻的所述芯片区域之间形成供所述粘附胶层的胶体溢出的溢出口。At least two electrode receiving holes communicated with the adhesive layer are formed in the chip area, so that at least two electrodes of the micro light-emitting chip can be respectively inserted and bonded with the adhesive layer, and at least two electrodes of the micro light-emitting chip can be inserted into the adhesive layer. An overflow port for the colloid of the adhesive layer to overflow is formed between a part of the adjacent chip regions.

上述临时基板的制作方法制得的临时基板,在应用于芯片转移过时,可保证转移至临时基板上的微型发光芯片只有电极与粘附胶层形成粘接,其他区域都不与粘附胶层接触,从而可保证微型发光芯片后续的转移。The temporary substrate prepared by the above-mentioned manufacturing method of the temporary substrate can ensure that only the electrodes and the adhesive layer of the micro light-emitting chip transferred to the temporary substrate are bonded when it is applied to the chip transfer, and other areas are not connected to the adhesive layer. contact, thereby ensuring the subsequent transfer of the micro light-emitting chip.

基于同样的发明构思,本申请还提供一种微型发光芯片转移方法,包括:Based on the same inventive concept, the present application also provides a method for transferring a micro light-emitting chip, including:

将承载基板上承载有多颗待转移的微型发光芯片的一面,与如上所述的临时基板设有所述粘附胶层一面对准压合,压合后所述微型发光芯片的各电极分别插入对应的所述电极容纳孔并嵌入所述粘附胶层内,压合过程中所述粘附胶层被挤压的一部分胶体通过所述溢出口溢出;Align and press the side of the carrier substrate that carries the micro-light-emitting chips to be transferred with the side of the temporary substrate provided with the adhesive layer, after pressing, the electrodes of the micro-light-emitting chips are pressed together. Insert the corresponding electrode accommodating holes respectively and embed them in the adhesive layer, and a part of the colloid squeezed by the adhesive layer during the pressing process overflows through the overflow port;

将所述承载基板与所述微型发光芯片分离,完成将所述微型发光芯片转移至所述临时基板上。The carrier substrate is separated from the micro light-emitting chip, and the transfer of the micro light-emitting chip to the temporary substrate is completed.

上述微型发光芯片转移方法,使用上述临时基板进行微型发光芯片的转移,可保证转移至临时基板上的微型发光芯片只有电极与粘附胶层形成粘接,其他区域都不与粘附胶层接触。The above-mentioned micro-light-emitting chip transfer method uses the above-mentioned temporary substrate to transfer the micro-light-emitting chip, which can ensure that the micro-light-emitting chip transferred to the temporary substrate only has electrodes bonded to the adhesive layer, and other areas are not in contact with the adhesive layer. .

附图说明Description of drawings

图1为相关技术中的微型发光芯片从生长基板转移至转移基板的示意图;FIG. 1 is a schematic diagram of the transfer of a micro light-emitting chip from a growth substrate to a transfer substrate in the related art;

图2-1为本发明实施例提供的临时基板示意图一;FIG. 2-1 is a schematic diagram 1 of a temporary substrate provided by an embodiment of the present invention;

图2-2为图2-1中的临时基板用于芯片转移的示意图;Fig. 2-2 is a schematic diagram of the temporary substrate in Fig. 2-1 used for chip transfer;

图3-1为本发明实施例提供的临时基板示意图二;FIG. 3-1 is a second schematic diagram of a temporary substrate provided by an embodiment of the present invention;

图3-2为图3-1中的临时基板用于芯片转移的示意图;Fig. 3-2 is a schematic diagram of the temporary substrate in Fig. 3-1 used for chip transfer;

图4-1为本发明实施例提供的临时基板示意图三;FIG. 4-1 is a schematic diagram 3 of a temporary substrate provided by an embodiment of the present invention;

图4-2为图4-1中的临时基板用于芯片转移的示意图;Fig. 4-2 is a schematic diagram of the temporary substrate in Fig. 4-1 used for chip transfer;

图5为本发明实施例提供的临时基板示意图四;FIG. 5 is a schematic diagram 4 of a temporary substrate provided by an embodiment of the present invention;

图6为图5中的临时基板用于芯片转移的示意图;FIG. 6 is a schematic diagram of the temporary substrate in FIG. 5 used for chip transfer;

图7-1为本发明实施例提供的临时基板示意图五;FIG. 7-1 is a schematic diagram 5 of a temporary substrate provided by an embodiment of the present invention;

图7-2为图7-1中的临时基板用于芯片转移的示意图;Fig. 7-2 is a schematic diagram of the temporary substrate in Fig. 7-1 used for chip transfer;

图8-1为本发明实施例提供的临时基板示意图六;FIG. 8-1 is a schematic diagram VI of a temporary substrate provided by an embodiment of the present invention;

图8-2为图8-1中的临时基板用于芯片转移的示意图;Fig. 8-2 is a schematic diagram of the temporary substrate in Fig. 8-1 used for chip transfer;

图9为本发明另一可选实施例提供的临时基板制作方法示意图;FIG. 9 is a schematic diagram of a method for fabricating a temporary substrate provided by another optional embodiment of the present invention;

图10-1为本发明另一可选实施例提供的临时基板制作方法流程示意图一;FIG. 10-1 is a schematic flow chart 1 of a method for fabricating a temporary substrate provided by another optional embodiment of the present invention;

图10-2为本发明另一可选实施例提供的临时基板制作过程示意图一;10-2 is a schematic diagram 1 of a manufacturing process of a temporary substrate provided by another optional embodiment of the present invention;

图11-1为本发明另一可选实施例提供的临时基板制作方法流程示意图二;11-1 is a second schematic flowchart of a method for fabricating a temporary substrate provided by another optional embodiment of the present invention;

图11-2为本发明另一可选实施例提供的临时基板制作过程示意图二;FIG. 11-2 is a second schematic diagram of a manufacturing process of a temporary substrate provided by another optional embodiment of the present invention;

图12-1为本发明又一可选实施例提供的微型发光芯片转移流程示意图;12-1 is a schematic diagram of a transfer process flow of a micro light-emitting chip provided by another optional embodiment of the present invention;

图12-2为本发明又一可选实施例提供的临时基板用于芯片转移的示意图;12-2 is a schematic diagram of a temporary substrate used for chip transfer provided by another optional embodiment of the present invention;

附图标记说明:Description of reference numbers:

10-生长基板,11,31-外延层,12,32-电极,13,21-粘附胶层,131,211-粘附胶层的胶体,14-转移基板,20-基板本体,22-遮挡层,23-芯片区域,24-电极容纳孔,25-溢出口,26-膨胀材料层,27-隔离墙,30-承载基板,40-辅助基板。10- Growth substrate, 11, 31- Epitaxial layer, 12, 32- Electrode, 13, 21- Adhesive glue layer, 131, 211- Adhesive glue layer colloid, 14- Transfer substrate, 20- Substrate body, 22- Blocking layer, 23-chip area, 24-electrode receiving hole, 25-overflow port, 26-expandable material layer, 27-separating wall, 30-bearing substrate, 40-auxiliary substrate.

具体实施方式Detailed ways

为了便于理解本申请,下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是,本申请可以以许多不同的形式来实现,并不限于本文所描述的实施方式。相反地,提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. The preferred embodiments of the present application are shown in the accompanying drawings. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough and complete understanding of the disclosure of this application is provided.

除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的,不是旨在于限制本申请。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the present application are for the purpose of describing particular embodiments only, and are not intended to limit the present application.

相关技术中,在将micro-LED芯片从生长基板转移至第一临时基板上,再采用类似的方式使用第二临时基板将micro-LED芯片从第一临时基板转移至显示背板的过程中,第一临时基板或第二临时基板上设置的胶层受到micro-LED芯片的电极的挤压会有一定的形变后可能与micro-LED芯片的外延层接触形成粘接,但是由于其又非完全流体状,与外延层粘接后不会再流平,冷却固定后会造成micro-LED芯片转移困难。In the related art, in the process of transferring the micro-LED chip from the growth substrate to the first temporary substrate, and then using the second temporary substrate to transfer the micro-LED chip from the first temporary substrate to the display backplane in a similar manner, The adhesive layer set on the first temporary substrate or the second temporary substrate will be deformed to a certain extent by the extrusion of the electrodes of the micro-LED chip, and may contact the epitaxial layer of the micro-LED chip to form a bond, but because it is not completely It is fluid and will not be leveled after bonding with the epitaxial layer. After cooling and fixing, it will make the transfer of the micro-LED chip difficult.

例如请参见图1所示,生长基板10上的微型发光芯片的电极12压合嵌入至转移基板14上的粘附胶层13的过程中,粘附胶层13受挤压变形,其中的一部分胶体131与微型发光芯片的外延层11接触形成粘接,从而导致后续微型发光芯片的转移困难,甚至出现转移失败的情况发生。For example, as shown in FIG. 1 , during the process of pressing and embedding the electrodes 12 of the micro light-emitting chips on the growth substrate 10 into the adhesive layer 13 on the transfer substrate 14 , the adhesive layer 13 is squeezed and deformed, and a part of the electrodes 12 are pressed and deformed. The colloid 131 is in contact with the epitaxial layer 11 of the micro light-emitting chip to form a bond, which makes the subsequent transfer of the micro light-emitting chip difficult, and even the transfer failure occurs.

基于此,本申请希望提供一种能够解决上述技术问题的方案,其详细内容将在后续实施例中得以阐述。Based on this, the present application hopes to provide a solution that can solve the above technical problems, the details of which will be described in the subsequent embodiments.

本实施例所示例的临时基板包括,基板本体,设置于基板本体上的粘附胶层,以及设置于粘附胶层上的遮挡层,遮挡层上具有多个芯片区域;且各芯片区域内设有至少两个与粘附胶层相通的电极容纳孔,以供微型发光芯片的至少两个电极分别插入并与粘附胶层形成粘接,这样微型发光芯片的两电极之间的外延层与粘附胶层之间被遮挡层隔离,可避免粘附胶层受挤压变形与外延层接触,且在本实施例中,至少一部分相邻的芯片区域之间设有供粘附胶层的胶体溢出的溢出口,以供被挤压的多余部分胶体从溢出口溢出,从而使得转移至临时基板上的微型发光芯片只有电极与粘附胶层形成粘接,其他区域都不与粘附胶层接触,从而可保证微型发光芯片后续的转移。The temporary substrate exemplified in this embodiment includes a substrate body, an adhesive layer disposed on the substrate body, and a shielding layer disposed on the adhesive layer, and the shielding layer has a plurality of chip regions; There are at least two electrode accommodating holes communicating with the adhesive layer, so that at least two electrodes of the micro light-emitting chip can be inserted into the adhesive layer respectively and form a bond with the adhesive layer, so that the epitaxial layer between the two electrodes of the micro light-emitting chip is formed. It is isolated from the adhesive layer by the shielding layer, which can prevent the adhesive layer from being squeezed and deformed from contact with the epitaxial layer, and in this embodiment, there is an adhesive layer between at least a part of adjacent chip areas The colloid overflows the overflow port, so that the excess part of the colloid that is squeezed overflows from the overflow port, so that the micro light-emitting chip transferred to the temporary substrate only has the electrode and the adhesive layer to form a bond, and other areas are not adhered to the adhesive layer. The adhesive layer is in contact, thereby ensuring the subsequent transfer of the micro light-emitting chip.

应当理解的是,在本实施例的一些应用示例中,各芯片区域与承载基板上承载的多颗待转移的微型发光芯片可一一对应,也可根据实际需求设置为非一一对应。例如,在一些应用场景中,承载基板上承载的待转移的微型发光芯片的数量可少于芯片区域的数量。It should be understood that, in some application examples of this embodiment, each chip area may have a one-to-one correspondence with a plurality of micro light-emitting chips to be transferred carried on the carrier substrate, or may be set in a non-one-to-one correspondence according to actual requirements. For example, in some application scenarios, the number of micro light-emitting chips to be transferred carried on the carrier substrate may be less than the number of chip areas.

应当理解的是,本实施例中溢出口的位置和数量可以灵活设定,只要能使得被挤压的多余胶体从溢出口排除且不会与微型发光芯片接触。例如,在一种应用示例中,可以在遮挡层上所有相邻的芯片区域之间设有供粘附胶层的胶体溢出的溢出口,且本实施例中溢出口的尺寸、形状等都可根据应用场景灵活设置;例如一些示例中,该溢出口可为孔状,且孔的形状不做限制,可以为方形孔、圆形孔、椭圆形孔或其他任意形状的孔;又例如,另一些示例中,该溢出口可为通槽。It should be understood that the position and number of the overflow openings in this embodiment can be set flexibly, as long as the squeezed excess colloid can be discharged from the overflow opening and will not come into contact with the micro light-emitting chip. For example, in an application example, an overflow port for the colloid of the adhesive layer to overflow may be provided between all adjacent chip areas on the shielding layer, and in this embodiment, the size and shape of the overflow port may be different. It can be set flexibly according to the application scenario; for example, in some examples, the overflow port can be in the shape of a hole, and the shape of the hole is not limited, and it can be a square hole, a circular hole, an oval hole or a hole of any other shape; for example, another In some examples, the overflow can be a through slot.

在本实施例的另一些应用示例中,也可仅在其中的一部分相邻的芯片区域之间设有供粘附胶层的胶体溢出的溢出口,例如可以N个(N大于等于2)相邻的芯片区域为一个芯片区域组,并在相邻芯片区域组之间设置溢出口。也可随机的在部分相邻芯片之间的区域设置溢出口,或采用其他任意规则在部分相邻芯片之间的区域设置溢出口。In other application examples of this embodiment, only a part of adjacent chip regions may be provided with overflow ports for the colloid of the adhesive layer to overflow, for example, N (N greater than or equal to 2) phases may be provided. The adjacent chip area is a chip area group, and an overflow port is set between the adjacent chip area groups. It is also possible to randomly set the overflow port in the area between some adjacent chips, or use other arbitrary rules to set the overflow port in the area between some adjacent chips.

在本实施例中,遮挡层上设置的电极容纳孔的形状和尺寸与电极的形状和尺寸相匹配。In this embodiment, the shape and size of the electrode accommodating hole provided on the shielding layer match the shape and size of the electrode.

应当理解的是,本实施例中的微型发光芯片可以包括但不限于micro-LED芯片、mini-LED芯片中的至少一种,例如一种示例中,微型发光芯片可以为micro-LED芯片;在又一种示例中,微型发光芯片可以为mini-LED芯片。It should be understood that the micro light-emitting chip in this embodiment may include, but is not limited to, at least one of a micro-LED chip and a mini-LED chip. For example, in an example, the micro light-emitting chip may be a micro-LED chip; In another example, the micro light-emitting chip may be a mini-LED chip.

应当理解的是,本实施例中的微型发光芯片可以包括但不限于倒装LED芯片、正装LED芯片中的至少一种,例如一种示例中,微型发光芯片可以为倒装LED芯片;在又一中示例中,微型发光芯片可以为正装LED芯片。It should be understood that the micro light-emitting chip in this embodiment may include, but is not limited to, at least one of a flip-chip LED chip and a front-mounted LED chip. For example, in one example, the micro-light-emitting chip may be a flip-chip LED chip; In one example, the miniature light-emitting chip may be a front mounted LED chip.

本实施例中的微型发光芯片包括但不限于外延层和电极,本实施例不限定微型发光芯片的外延层的具体结构,在一种示例中,微型发光芯片的外延层可以包括N型半导体、P型半导体以及位于N型半导体和P型半导体之间的有源层,该有源层可以包括量子阱层,还可以包括其他结构。在另一些示例中,可选地,外延层还可包括反射层、钝化层中的至少一种。本实施例中电极的材质和形状也不做限定,例如一种示例中,电极的材质可包括但不限于Cr,Ni,Al,Ti,Au,Pt,W,Pb,Rh,Sn,Cu,Ag中的至少一种。The micro light-emitting chip in this embodiment includes, but is not limited to, an epitaxial layer and electrodes. This embodiment does not limit the specific structure of the epitaxial layer of the micro light-emitting chip. A P-type semiconductor and an active layer located between the N-type semiconductor and the P-type semiconductor, the active layer may include a quantum well layer, and may also include other structures. In other examples, optionally, the epitaxial layer may further include at least one of a reflective layer and a passivation layer. The material and shape of the electrode in this embodiment are also not limited. For example, in an example, the material of the electrode may include but not limited to Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, at least one of Ag.

应当理解的是,本实施例中的基板本体的材质不做限制,其可采用但不限于玻璃、蓝宝石、石英和硅中的任意一种。It should be understood that the material of the substrate body in this embodiment is not limited, and it may be any one of glass, sapphire, quartz, and silicon, but not limited to.

应当理解的是,本实施例中的承载基板可以为生长基板,此时的基板本体可为第一临时基板的本体;且生长基板的材质为可在生长基板上生长微型发光芯片的各种半导体材料,例如,该生长基板的材质可以为但不限于蓝宝石、碳化硅、硅、砷化镓,也可以为其他半导体材料,在此不做限制。且应当理解的是,该承载基板并不限于生长基板,也可以为用于承载微型发光芯片的第一临时基板,此时本实施例中的临时基板可以为第二临时基板。It should be understood that the carrier substrate in this embodiment may be a growth substrate, and the substrate body at this time may be the body of the first temporary substrate; and the material of the growth substrate is various semiconductors that can grow micro light-emitting chips on the growth substrate Material, for example, the material of the growth substrate can be, but not limited to, sapphire, silicon carbide, silicon, gallium arsenide, or other semiconductor materials, which are not limited here. It should be understood that the carrier substrate is not limited to the growth substrate, but can also be a first temporary substrate for carrying micro light-emitting chips, and in this case, the temporary substrate in this embodiment can be a second temporary substrate.

本实施例中的遮挡层可采用具有较好的坚硬程度的各种材质,例如可以为但不限于金属层或无机材料层。The shielding layer in this embodiment can be made of various materials with good hardness, such as but not limited to a metal layer or an inorganic material layer.

为了便于理解,下面结合附图中的临时基板设置示例进行说明。For ease of understanding, the following description will be made with reference to an example of a temporary substrate arrangement in the accompanying drawings.

一种设置示例请参见图2-1所示,在基板本体20上设置有粘附胶层21,在粘附胶层21上设置有遮挡层22,其中遮挡层22上具有多个芯片区域23,一个芯片区域23对应承载基板上的一个微型发光芯片。每个芯片区域23内设置有两个电极容纳孔24(应当理解的是,电极容纳孔的个数可根据微型发光芯片的电极个数对应设置),各相邻芯片区域23之间设有溢出口25。An example of setting is shown in FIG. 2-1. An adhesive layer 21 is arranged on the substrate body 20, and a shielding layer 22 is arranged on the adhesive layer 21, wherein the shielding layer 22 has a plurality of chip regions 23. , one chip area 23 corresponds to one micro light-emitting chip on the carrier substrate. Each chip area 23 is provided with two electrode accommodating holes 24 (it should be understood that the number of electrode accommodating holes can be set according to the number of electrodes of the micro light-emitting chip), and overflows are provided between adjacent chip areas 23 Exit 25.

本示例中,在将微型发光芯片从承载基板转移至临时基板上的时,参见图2-2所示,将承载基板30上设置有微型发光芯片的一面与基板本体20设置有粘附胶层21的一面贴合,并施加一定的压力使得微型发光芯片的电极32嵌入粘附胶层21,在压合过程中,一部分多余的胶体211被挤压从溢出口25溢出,从而可避免胶体从微型发光芯片的两电极之间溢出并与微型发光芯片的外延层31形成粘接,更利于微型发光芯片后续从基板本体20上转移。In this example, when the micro light-emitting chips are transferred from the carrier substrate to the temporary substrate, as shown in FIG. 2-2 , the side of the carrier substrate 30 with the micro light-emitting chips and the substrate body 20 are provided with an adhesive layer One side of 21 is attached, and a certain pressure is applied to make the electrodes 32 of the micro light-emitting chip embedded in the adhesive layer 21. During the pressing process, a part of the excess colloid 211 is squeezed to overflow from the overflow port 25, so as to prevent the colloid from overflowing from the adhesive layer 21. The two electrodes of the micro light-emitting chip overflow between the electrodes and form a bond with the epitaxial layer 31 of the micro light-emitting chip, which is more convenient for the subsequent transfer of the micro light-emitting chip from the substrate body 20 .

另一种设置示例请参见图3-1所示,在基板本体20上设置有粘附胶层21,在粘附胶层21上设置有遮挡层22,其中遮挡层22上具有多个芯片区域23,一个芯片区域23对应承载基板上的一个微型发光芯片。每个芯片区域23内设置有两个电极容纳孔24,各以相邻两个芯片区域23为一个芯片区域组,在相邻芯片区域组之间设有溢出口25。For another setting example, please refer to FIG. 3-1. An adhesive layer 21 is provided on the substrate body 20, and a blocking layer 22 is provided on the adhesive layer 21, wherein the blocking layer 22 has a plurality of chip areas. 23. One chip area 23 corresponds to one micro light-emitting chip on the carrier substrate. Each chip area 23 is provided with two electrode accommodating holes 24 , and two adjacent chip areas 23 are each set as a chip area group, and an overflow port 25 is provided between the adjacent chip area groups.

本示例中,在将微型发光芯片从承载基板转移至临时基板上的时,参见图3-2所示,将承载基板30上设置有微型发光芯片的一面与基板本体20设置有粘附胶层21的一面贴合,并施加一定的压力使得微型发光芯片的电极32嵌入粘附胶层21,在压合过程中,一部分多余的胶体211被挤压从溢出口25溢出,也可避免胶体从微型发光芯片的两电极之间溢出并与微型发光芯片的外延层31形成粘接。In this example, when the micro light-emitting chips are transferred from the carrier substrate to the temporary substrate, as shown in FIG. 3-2 , the side of the carrier substrate 30 with the micro light-emitting chips and the substrate body 20 are provided with an adhesive layer 21, and apply a certain pressure to make the electrodes 32 of the micro light-emitting chip embedded in the adhesive layer 21. During the pressing process, a part of the excess colloid 211 is squeezed to overflow from the overflow port 25, which can also prevent the colloid from overflowing from the adhesive layer 21. The two electrodes of the micro light-emitting chip overflow and form a bond with the epitaxial layer 31 of the micro light-emitting chip.

可选地,在本实施例的一些示例中,为了避免胶体在挤压过程中沿着电极与电极容纳孔侧壁之间的缝隙溢出,临时基板还包括设置于电极容纳孔的侧壁上的膨胀材料层,该膨胀材料层在电极插入电极容纳孔并与粘附胶层形成粘接后,在设定膨胀环境下产生膨胀与电极形成紧密贴合,可进一步提升保证微型发光芯片只有电极与粘附胶层形成粘接,其他区域都不与粘附胶层接触。Optionally, in some examples of this embodiment, in order to prevent the colloid from overflowing along the gap between the electrode and the side wall of the electrode accommodating hole during the extrusion process, the temporary substrate further includes a The expansion material layer, after the electrode is inserted into the electrode accommodating hole and formed into a bond with the adhesive layer, expands under the set expansion environment and forms a close contact with the electrode, which can further improve and ensure that the micro light-emitting chip has only the electrode and the electrode. The adhesive layer forms the bond and no other areas are in contact with the adhesive layer.

本实施例中的膨胀材料层的材质可以采用在设定膨胀环境下可产生膨胀,且对电极无损伤的各种材料。例如可以为受热膨胀材料层或吸水膨胀材料层。The material of the expansion material layer in this embodiment can be made of various materials that can expand under a set expansion environment and do not damage the electrodes. For example, it may be a layer of heat-expandable material or a layer of water-swellable material.

为受热膨胀材料层时,可对其进行加热使其膨胀与电极形成紧密贴合,该加热环境可以为对粘附胶层进行加热解粘的环境。When the material layer is heated to expand, it can be heated to make it expand and form close contact with the electrode, and the heating environment can be an environment for heating and debonding the adhesive layer.

为吸水膨胀材料层时,可将其置于吸水环境中,使得膨胀材料层吸水膨胀,膨胀材料层膨胀过程中与电极之间的结合力变小。一些示例中,该吸水膨胀材料可以为但不限于有机多孔材料、氟化锂。When it is a water-absorbing swelling material layer, it can be placed in a water-absorbing environment, so that the swelling material layer absorbs water and swells, and the bonding force between the swelling material layer and the electrode becomes smaller during the swelling process. In some examples, the water-swellable material may be, but is not limited to, an organic porous material, lithium fluoride.

应当理解的是,本实施例中的吸水环境可以灵活设定,只要能满足使得膨胀材料层吸水膨胀,进而使得膨胀材料层在膨胀过程中与电极之间紧密接触的程度逐渐更为紧密。It should be understood that the water absorption environment in this embodiment can be set flexibly, as long as the swelling material layer can be swelled by water absorption, so that the degree of close contact between the swelling material layer and the electrode during the swelling process is gradually tighter.

例如,在一些示例中,该吸水环境可以设置为空气湿度为50%至100%,环境温度为常温。For example, in some examples, the water absorbing environment may be set such that the air humidity is 50% to 100%, and the ambient temperature is normal temperature.

可选地,在本实施例的一些示例中,为了提升膨胀材料层吸水膨胀的效率,可以适当的提升环境温度和气压,从而提升转移效率。例如,一种示例中,该吸水环境可包括但不限于:Optionally, in some examples of this embodiment, in order to improve the efficiency of water-swelling expansion of the swelling material layer, the ambient temperature and air pressure may be appropriately increased, thereby improving the transfer efficiency. For example, in one example, the absorbent environment may include, but is not limited to:

空气湿度为50%至100%;例如空气湿度可以为但不限于50%、60%、70%、80%、90%、100%;The air humidity is 50% to 100%; for example, the air humidity can be but not limited to 50%, 60%, 70%, 80%, 90%, 100%;

环境温度为60℃至85℃;例如环境温度可以设置为但不限于60℃、65℃、70℃、75℃、80℃、85℃;The ambient temperature is 60°C to 85°C; for example, the ambient temperature can be set to but not limited to 60°C, 65°C, 70°C, 75°C, 80°C, 85°C;

气压为1.5个标准大气压至2个标准大气压,例如可以设置为但不限于1.5个标准大气压、1.6个标准大气压、1.7个标准大气压、1.8个标准大气压、2个标准大气压等。The pressure is 1.5 standard atmospheres to 2 standard atmospheres, for example, but not limited to, 1.5 standard atmospheres, 1.6 standard atmospheres, 1.7 standard atmospheres, 1.8 standard atmospheres, 2 standard atmospheres, etc.

为了便于理解,下面结合附图中的临时基板设置示例进行说明。For ease of understanding, the following description will be made with reference to an example of a temporary substrate arrangement in the accompanying drawings.

一种设置示例请参见图4-1所示,在基板本体20上设置有粘附胶层21,在粘附胶层21上设置有遮挡层22,其中遮挡层22上具有多个芯片区域23,一个芯片区域23对应承载基板上的一个微型发光芯片。每个芯片区域23内设置有两个电极容纳孔24,至少一部分相邻两个芯片区域23之间设有溢出口25。电极容纳孔24的侧壁上的膨胀材料层26,电极容纳孔24的侧壁上设置了膨胀材料层26后,膨胀材料层26围合孔径与微型发光芯片的电极的尺寸相匹配,例如可以相等或略大于电极的尺寸。An example of setting is shown in FIG. 4-1. An adhesive layer 21 is arranged on the substrate body 20, and a shielding layer 22 is arranged on the adhesive layer 21, wherein the shielding layer 22 has a plurality of chip regions 23. , one chip area 23 corresponds to one micro light-emitting chip on the carrier substrate. Each chip area 23 is provided with two electrode accommodating holes 24 , and at least a part of the two adjacent chip areas 23 is provided with an overflow port 25 . The expanded material layer 26 on the side wall of the electrode accommodating hole 24. After the expanded material layer 26 is provided on the side wall of the electrode accommodating hole 24, the enclosing aperture of the expanded material layer 26 matches the size of the electrode of the micro light-emitting chip, for example, it can be equal to or slightly larger than the size of the electrodes.

本示例中,在将微型发光芯片从承载基板转移至临时基板上的时,参见图4-2所示,将承载基板30上设置有微型发光芯片的一面与基板本体20设置有粘附胶层21的一面贴合,然后将其处于膨胀环境中并施加一定的压力使得微型发光芯片的电极32嵌入粘附胶层21,且膨胀材料层26膨胀后与电极32形成紧密接触,避免胶体从二者之间溢出。在压合过程中,一部分多余的胶体211被挤压从溢出口25溢出,可避免胶体从微型发光芯片的两电极之间溢出并与微型发光芯片的外延层31形成粘接。In this example, when the micro light-emitting chips are transferred from the carrier substrate to the temporary substrate, as shown in FIG. 4-2 , an adhesive layer is provided on the side of the carrier substrate 30 with the micro-light-emitting chips and the substrate body 20 . One side of 21 is attached, and then it is placed in an expansion environment and a certain pressure is applied to make the electrode 32 of the micro light-emitting chip embedded in the adhesive layer 21, and the expansion material layer 26 forms a close contact with the electrode 32 after expansion, so as to prevent the colloid from overflow between them. During the pressing process, a part of the excess colloid 211 is squeezed and overflowed from the overflow port 25, which can prevent the colloid from overflowing between the two electrodes of the micro light-emitting chip and form bonding with the epitaxial layer 31 of the micro light-emitting chip.

可选地,在本实施例的一些示例中,为了避免从溢出口溢出的胶体流向芯片区域,从而进一步避免微型发光芯片的侧面与溢出的胶体接触,以保证微型发光芯片后续的顺利转移。临时基板还包括设置于遮挡层上,将溢出口与芯片区域隔离的隔离墙,隔离墙与遮挡层的高度之和,小于等于微型发光芯片的总高度减去微型发光芯片的电极嵌入粘附胶层部分的高度。通过该隔离墙的设置,可避免从溢出口溢出的胶体流向芯片区域,从而可进一步避免微型发光芯片的侧面与溢出的胶体接触,保证微型发光芯片后续的顺利转移。Optionally, in some examples of this embodiment, in order to prevent the colloid overflowing from the overflow port from flowing to the chip area, the side of the micro light-emitting chip is further prevented from contacting with the overflowing colloid, so as to ensure the subsequent smooth transfer of the micro light-emitting chip. The temporary substrate also includes a separation wall arranged on the shielding layer to isolate the overflow port from the chip area. The sum of the heights of the separation wall and the shielding layer is less than or equal to the total height of the micro light-emitting chip minus the electrode embedding adhesive of the micro light-emitting chip. The height of the layer section. The arrangement of the isolation wall can prevent the colloid overflowing from the overflow port from flowing to the chip area, thereby further avoiding the contact between the side of the micro light-emitting chip and the overflowing colloid, and ensuring the subsequent smooth transfer of the micro light-emitting chip.

在本实施例的一些示例中,隔离墙与遮挡层的高度之和,可以等于微型发光芯片的总高度减去微型发光芯片的电极嵌入粘附胶层部分的高度,从而在微型发光芯片的电极嵌入粘附胶层的高度达到一定程度后可被隔离墙阻挡,避免其进一步嵌入粘附胶层,此时的隔离墙还可起到限位作用。In some examples of this embodiment, the sum of the heights of the isolation wall and the shielding layer may be equal to the total height of the micro light-emitting chip minus the height of the portion where the electrodes of the micro-light-emitting chip are embedded in the adhesive layer, so that the electrodes of the micro-light-emitting chip are embedded in the adhesive layer. When the height of the embedded adhesive layer reaches a certain level, it can be blocked by the partition wall to prevent it from being further embedded in the adhesive layer. At this time, the partition wall can also play a limiting role.

在本实施例的一种示例中,隔离墙可与遮挡层一体成型,例如隔离墙也可为金属材料或无机材料。在本实施例的另一种示例中,隔离墙与遮挡层也可不为一体成型结构,且其材质可与遮挡层的材质不同,例如其可为有机材料;当然也可与遮挡层的材质相同,例如也可为金属材料或无机材料。In an example of this embodiment, the isolation wall may be integrally formed with the shielding layer, for example, the isolation wall may also be a metal material or an inorganic material. In another example of this embodiment, the isolation wall and the shielding layer may not be integrally formed, and the material may be different from that of the shielding layer, for example, it may be an organic material; of course, it may also be the same as the material of the shielding layer , for example, it can also be a metal material or an inorganic material.

为了便于理解,下面结合附图中的临时基板设置示例进行说明。For ease of understanding, the following description will be made with reference to an example of a temporary substrate arrangement in the accompanying drawings.

一种设置示例请参见图5所示,在基板本体20上设置有粘附胶层21,在粘附胶层21上设置有遮挡层22,其中遮挡层22上具有多个芯片区域23,一个芯片区域23对应承载基板上的一个微型发光芯片。每个芯片区域23内设置有两个电极容纳孔24,各相邻两个芯片区域23之间设有溢出口25。电极容纳孔24的侧壁上的膨胀材料层26,在遮挡层22上设置有将各溢出口与芯片区域隔离的隔离墙27。An example of the arrangement is shown in FIG. 5 , an adhesive layer 21 is arranged on the substrate body 20 , and a shielding layer 22 is arranged on the adhesive layer 21 , wherein the shielding layer 22 has a plurality of chip areas 23 , one The chip area 23 corresponds to a micro light-emitting chip on the carrier substrate. Each chip area 23 is provided with two electrode accommodating holes 24 , and an overflow port 25 is provided between two adjacent chip areas 23 . The expansion material layer 26 on the side wall of the electrode accommodating hole 24 is provided with a partition wall 27 on the shielding layer 22 to isolate each overflow port from the chip area.

本示例中,在将微型发光芯片从承载基板转移至临时基板上的时,参见图6所示,将承载基板30上设置有微型发光芯片的一面与基板本体20设置有粘附胶层21的一面贴合,然后将其处于膨胀环境中并施加一定的压力使得微型发光芯片的电极32嵌入粘附胶层21,且膨胀材料层26膨胀后与电极32形成紧密接触,避免胶体从二者之间溢出。在压合过程中,一部分多余的胶体211被挤压从溢出口25溢出,且溢出的胶体211被隔离墙27阻挡阻止其流向芯片区域,可避免胶体从微型发光芯片的两电极之间溢出并与微型发光芯片的外延层31形成粘接;且隔离墙27还可阻止微型发光芯片的电极过度嵌入粘附胶层。In this example, when the micro light-emitting chips are transferred from the carrier substrate to the temporary substrate, as shown in FIG. One side is attached, and then it is placed in an expansion environment and a certain pressure is applied to make the electrode 32 of the micro light-emitting chip embedded in the adhesive layer 21, and the expansion material layer 26 forms a close contact with the electrode 32 after expansion, so as to prevent the colloid from passing between the two. overflow. During the pressing process, a part of the excess colloid 211 is squeezed and overflowed from the overflow port 25, and the overflowing colloid 211 is blocked by the partition wall 27 to prevent it from flowing to the chip area, which can prevent the colloid from overflowing from between the two electrodes of the micro light-emitting chip. Bonding is formed with the epitaxial layer 31 of the micro light-emitting chip; and the isolation wall 27 can also prevent the electrodes of the micro light-emitting chip from being excessively embedded in the adhesive layer.

另一种设置示例请参见图7-1所示,在基板本体20上设置有粘附胶层21,在粘附胶层21上设置有遮挡层22,其中遮挡层22上具有多个芯片区域23。每个芯片区域23内设置有两个电极容纳孔24,以邻两个芯片区域23为一组芯片区域组,相邻芯片区域组之间设有溢出口25。电极容纳孔24的侧壁上的膨胀材料层26,在遮挡层22上设置有将各溢出口与芯片区域隔离的隔离墙27。本示例中,在将微型发光芯片从承载基板转移至临时基板上的时,参见图7-2所示,将承载基板30上设置有微型发光芯片的一面与基板本体20设置有粘附胶层21的一面贴合,然后将其处于膨胀环境(例如加热环境)中并施加一定的压力使得微型发光芯片的电极32嵌入粘附胶层21,且膨胀材料层26膨胀后与电极32形成紧密接触,避免胶体从二者之间溢出。在压合过程中,一部分多余的胶体211被挤压从溢出口25溢出,且溢出的胶体211被隔离墙27阻挡阻止其流向芯片区域,可避免胶体从微型发光芯片的两电极之间溢出并与微型发光芯片的外延层31形成粘接;且隔离墙27还可阻止微型发光芯片的电极过度嵌入粘附胶层。For another setting example, please refer to FIG. 7-1. An adhesive layer 21 is provided on the substrate body 20, and a blocking layer 22 is provided on the adhesive layer 21, wherein the blocking layer 22 has a plurality of chip regions. twenty three. Each chip area 23 is provided with two electrode accommodating holes 24 , and two adjacent chip areas 23 are set as a chip area group, and an overflow port 25 is provided between the adjacent chip area groups. The expansion material layer 26 on the side wall of the electrode accommodating hole 24 is provided with a partition wall 27 on the shielding layer 22 to isolate each overflow port from the chip area. In this example, when the micro light-emitting chips are transferred from the carrier substrate to the temporary substrate, as shown in FIG. 7-2 , an adhesive layer is provided on the side of the carrier substrate 30 with the micro light-emitting chips and the substrate body 20 . One side of 21 is attached, and then it is placed in an expansion environment (such as a heating environment) and a certain pressure is applied to make the electrode 32 of the micro light-emitting chip embedded in the adhesive layer 21, and the expansion material layer 26 is expanded to form close contact with the electrode 32 , to prevent the colloid from overflowing between the two. During the pressing process, a part of the excess colloid 211 is squeezed and overflowed from the overflow port 25, and the overflowing colloid 211 is blocked by the partition wall 27 to prevent it from flowing to the chip area, which can prevent the colloid from overflowing from between the two electrodes of the micro light-emitting chip. Bonding is formed with the epitaxial layer 31 of the micro light-emitting chip; and the isolation wall 27 can also prevent the electrodes of the micro light-emitting chip from being excessively embedded in the adhesive layer.

应当理解的是,本实施例中隔离墙27在遮挡层22上设置的位置可以为设置在各溢出口的边缘,也可设置于遮挡层22上的其他任意位置,只要能达到上述目的即可。例如一种示例请参见图8-1至图8-2所示,其与图7-1和图7-2所示的结构相比,主要区别在于隔离墙27的设置位置更靠近电极容纳孔24。It should be understood that, in this embodiment, the position of the partition wall 27 on the shielding layer 22 can be set at the edge of each overflow port, or at any other position on the shielding layer 22, as long as the above purpose can be achieved. . For example, please refer to Fig. 8-1 to Fig. 8-2 for an example. Compared with the structures shown in Fig. 7-1 and Fig. 7-2, the main difference is that the partition wall 27 is disposed closer to the electrode accommodating hole. twenty four.

本发明另一可选实施例:Another optional embodiment of the present invention:

本实施例提供了一种上述实施例所示的临时基板的制作方法,但应当理解的是,本实施例中的临时基板的制作方法仅仅是一种制作示例,且临时基板的制作并不限于本实施例所示的方法。请参见图9所示,本实施例所示的临时基板的制作方法包括但不限于:This embodiment provides a method for fabricating the temporary substrate shown in the above embodiments, but it should be understood that the method for fabricating the temporary substrate in this embodiment is only a fabrication example, and the fabrication of the temporary substrate is not limited to method shown in this example. Referring to FIG. 9 , the manufacturing method of the temporary substrate shown in this embodiment includes but is not limited to:

S901:提供基板本体。S901: Provide a substrate body.

S902:在基板本体上形成粘附胶层。S902 : forming an adhesive layer on the substrate body.

应当理解的是,本实施例中的粘附胶层的材质和形成工艺不做限制,例如可以采用但不限于涂覆、印刷、模压等方式在基板本体的正面上形成粘附胶层。It should be understood that the material and forming process of the adhesive layer in this embodiment are not limited. For example, the adhesive layer may be formed on the front surface of the substrate body by, but not limited to, coating, printing, and molding.

S903:在粘附胶层上形成遮挡层,遮挡层上具有多个芯片区域。S903 : forming a shielding layer on the adhesive layer, and the shielding layer has a plurality of chip regions.

本实施例中对于遮挡层的具体材质和形成工艺也不做限制,例如,一些实例中,其可为金属材质,也可为无机材料,可通过但不限于沉积、蒸镀等方式形成遮挡层。The specific material and forming process of the shielding layer are also not limited in this embodiment. For example, in some examples, it can be a metal material or an inorganic material, and the shielding layer can be formed by, but not limited to, deposition, evaporation, etc. .

S904:在芯片区域内形成至少两个与粘附胶层相通的电极容纳孔,以供对应的微型发光芯片的至少两个电极分别插入并与粘附胶层形成粘接,以及在至少一部分相邻的芯片区域之间形成供粘附胶层的胶体溢出的溢出口。S904: Form at least two electrode accommodating holes in the chip area that communicate with the adhesive layer, so that at least two electrodes of the corresponding micro light-emitting chip can be inserted respectively and form a bond with the adhesive layer, and at least a part of the electrodes is connected to the adhesive layer. An overflow port for the colloid of the adhesive layer to overflow is formed between adjacent chip areas.

本实施例中对于电极容纳孔和溢出口的形成可以在同一工艺步骤中形成,也可分别采用不同的工艺步骤形成。且采用的形成方式可以包括但不限在遮挡层上通过蚀刻、切割等方式形成。In this embodiment, the formation of the electrode accommodating hole and the overflow port may be formed in the same process step, or may be formed by different process steps. And the formation method used may include, but is not limited to, forming on the shielding layer by etching, cutting, and the like.

可选地,在本示例中,为了避免胶体在挤压过程中沿着电极与电极容纳孔侧壁之间的缝隙溢出,在芯片区域内形成至少两个被遮挡层隔离且与粘附胶层相通的电极容纳孔后,还可包括但不限于:Optionally, in this example, in order to prevent the glue from overflowing along the gap between the electrode and the side wall of the electrode accommodating hole during the extrusion process, at least two shielded layers are formed in the chip area and separated from the adhesive glue layer. After the communicating electrode accommodating holes, it can also include but is not limited to:

在电极容纳孔的侧壁上形成膨胀材料层,膨胀材料层在电极插入电极容纳孔并与粘附胶层形成粘接后,在设定膨胀环境下产生膨胀与所述电极形成紧密贴合。An expansion material layer is formed on the side wall of the electrode accommodating hole. After the electrode is inserted into the electrode accommodating hole and bonded with the adhesive layer, the expansion material layer expands under a set expansion environment to form a close fit with the electrode.

可选地,在本示例中,为了避免从溢出口溢出的胶体流向芯片区域,从而进一步避免微型发光芯片的侧面与溢出的胶体接触,以保证微型发光芯片后续的顺利转移。临时基板还包括设置于遮挡层上,将溢出口与芯片区域隔离的隔离墙,隔离墙的高度小于等于微型发光芯片的总高度减去微型发光芯片的电极嵌入粘附胶层部分的高度。其中,一种示例中,在至少一部分相邻的芯片区域之间形成供所述粘附胶层的胶体溢出的溢出口后,还可包括:在遮挡层上形成将溢出口与芯片区域隔离的隔离墙,隔离墙的高度小于等于微型发光芯片的总高度减去微型发光芯片的电极嵌入粘附胶层部分的高度。Optionally, in this example, in order to prevent the colloid overflowing from the overflow port from flowing to the chip area, the side of the micro light emitting chip is further prevented from contacting with the overflowing colloid, so as to ensure the subsequent smooth transfer of the micro light emitting chip. The temporary substrate also includes a separation wall arranged on the shielding layer to separate the overflow from the chip area, the height of the separation wall is less than or equal to the total height of the micro light-emitting chip minus the height of the electrode embedded in the adhesive layer of the micro light-emitting chip. Wherein, in an example, after forming an overflow port for the colloid of the adhesive layer to overflow between at least a part of the adjacent chip areas, the method may further include: forming an overflow port on the shielding layer to isolate the overflow port from the chip area. The isolation wall, the height of the isolation wall is less than or equal to the total height of the micro light-emitting chip minus the height of the part where the electrodes of the micro-light-emitting chip are embedded in the adhesive layer.

在本实施例的另一些示例中,还可在形成溢出口的过程中同时形成隔离墙。In other examples of this embodiment, the separation wall may also be formed simultaneously with the process of forming the overflow.

为了便于理解,本实施例下面结合图10和图11所示的两种临时基板制作方法为示例进行说明。For ease of understanding, this embodiment is described below with reference to the two methods for fabricating temporary substrates shown in FIG. 10 and FIG. 11 as examples.

一种临时基板的制作方法请参见图10-1至图10-2所示,其包括但不限于:A fabrication method of a temporary substrate is shown in FIGS. 10-1 to 10-2, including but not limited to:

S1001:在辅助基板40上通过沉积(例如物理气象沉积)或蒸镀形成一层坚硬的遮挡层22。S1001: Form a hard shielding layer 22 on the auxiliary substrate 40 by deposition (eg physical vapor deposition) or evaporation.

该遮挡层22可以为但不限于坚硬金属层或坚硬无机层。The shielding layer 22 can be, but not limited to, a hard metal layer or a hard inorganic layer.

S1002:在基板本体20上形成一层粘附胶层21。S1002 : forming an adhesive layer 21 on the substrate body 20 .

应当理解的是,步骤S1001可与S1002同时执行,也可先执行S1001,再执行S1002,或先执行S1002,再执行S1001。It should be understood that step S1001 and S1002 may be performed simultaneously, or S1001 may be performed first, and then S1002 may be performed, or S1002 may be performed first, and then S1001 may be performed.

S1003:将辅助基板40设置有遮挡层22的一面与基板本体20上的粘附胶层21高温解压贴合。S1003 : decompressing and bonding the surface of the auxiliary substrate 40 on which the shielding layer 22 is provided with the adhesive layer 21 on the substrate body 20 under high temperature.

本步骤将遮挡层22与粘附胶层形成粘接,同时由于遮挡层22平面型好,在一定压力下可以压平粘附胶层21。In this step, the shielding layer 22 is bonded to the adhesive layer, and at the same time, because the shielding layer 22 has a good plane shape, the adhesive layer 21 can be flattened under a certain pressure.

S1004:将辅助基板40去除。S1004: Remove the auxiliary substrate 40.

可通过但不限于物理研磨、等离子刻蚀、化学腐蚀等方式将辅助基板20移除露出遮挡层22,可选地,遮挡层22的厚度可以预留一定的余量,以免辅助基板20移除导致遮挡层22厚度不足。The auxiliary substrate 20 can be removed to expose the shielding layer 22 through, but not limited to, physical grinding, plasma etching, chemical etching, etc. Optionally, the thickness of the shielding layer 22 can be reserved with a certain margin to prevent the auxiliary substrate 20 from being removed. As a result, the thickness of the shielding layer 22 is insufficient.

S1005:在遮挡层22上形成电极容纳孔24和溢出口25。S1005 : forming the electrode accommodating hole 24 and the overflow port 25 on the shielding layer 22 .

例如,可通过但不限于光刻、刻蚀使遮挡层22形成具有电极容纳孔24和溢出口25的图形,遮挡层22留出与微型发光芯片的电极对应的电极容纳孔24,电极容纳孔24的图形与微型发光芯片的电极相同,大小略大于微型发光芯片的电极,同时对应相邻微型发光芯片的芯片区域之间留出开口作为溢出口25,形状不限。For example, the shielding layer 22 can be formed into a pattern with electrode accommodating holes 24 and overflow openings 25 by, but not limited to, photolithography and etching, and the shielding layer 22 leaves electrode accommodating holes 24 corresponding to the electrodes of the micro light-emitting chip. The electrode accommodating holes The pattern of 24 is the same as that of the electrode of the micro light-emitting chip, and the size is slightly larger than the electrode of the micro light-emitting chip. At the same time, there is an opening between the chip regions corresponding to the adjacent micro-light-emitting chip as the overflow port 25, and the shape is not limited.

S1006:在遮挡层22上的电极容纳孔24和溢出口25内形成膨胀材料层26。S1006 : forming the expansion material layer 26 in the electrode receiving hole 24 and the overflow port 25 on the shielding layer 22 .

S1007:对电极容纳孔24中的膨胀材料层26的中间区域去除,保留电极容纳孔24侧壁上的膨胀材料层26;并将溢出口中的膨胀材料层26全部去除。S1007: Remove the middle area of the expansion material layer 26 in the electrode receiving hole 24, keep the expansion material layer 26 on the side wall of the electrode receiving hole 24; and remove all the expansion material layer 26 in the overflow port.

例如,可以通过在电极容纳孔24中通过涂覆、光刻等形成膨胀材料层26,其具有较大的热膨胀系数或吸水膨胀系数,形成缓冲物后,膨胀材料层26围合形成的开口的口径略大于微型发光芯片的电极的尺寸。For example, the expansion material layer 26 can be formed in the electrode accommodating hole 24 by coating, photolithography, etc., which has a larger thermal expansion coefficient or water absorption expansion coefficient. After the buffer is formed, the expansion material layer 26 encloses the formed opening. The aperture is slightly larger than the size of the electrodes of the micro light-emitting chip.

S1008:在遮挡层22上形成一整层隔离墙27的材料层。S1008 : forming a whole material layer of the isolation wall 27 on the shielding layer 22 .

该隔离墙27的材料层可以为有机材料层,且可为光刻胶层,也可为非光刻胶层。The material layer of the isolation wall 27 may be an organic material layer, and may be a photoresist layer or a non-photoresist layer.

S1009:对隔离墙27的材料层进行部分去除,保留的隔离墙27的材料层形成隔离墙27。S1009 : Partially remove the material layer of the isolation wall 27 , and the remaining material layer of the isolation wall 27 forms the isolation wall 27 .

形成的隔离墙27的高度加上遮挡层的高度=微型发光芯片的总高度(例如外延层的高度与电极的高度之和)减去电极欲压入胶材深度。The height of the formed isolation wall 27 plus the height of the shielding layer=the total height of the micro light-emitting chip (eg, the sum of the height of the epitaxial layer and the height of the electrode) minus the depth of the electrode to be pressed into the glue.

在本示例中,若隔离墙27的材料层采用的有机材料已经是具有感光性的光阻类材料,则直接对其进行光刻形成图形即可,无需在进行刻蚀等。In this example, if the organic material used in the material layer of the isolation wall 27 is already a photoresist material with photosensitivity, it is sufficient to directly perform photolithography to form a pattern, and there is no need to perform etching or the like.

另一种临时基板的制作方法请参见图11-1至图11-2所示,其包括但不限于:Please refer to Fig. 11-1 to Fig. 11-2 for another fabrication method of the temporary substrate, which includes but is not limited to:

S1101:在辅助基板40上通过沉积(例如物理气象沉积)或蒸镀形成一层坚硬的遮挡层22。S1101: Form a hard shielding layer 22 on the auxiliary substrate 40 by deposition (eg physical vapor deposition) or evaporation.

该遮挡层22可以为但不限于坚硬金属层或坚硬无机层,其高度(也可称之为厚度)小于等于微型发光芯片的总高度(例如外延层的高度与电极的高度之和)减去电极欲压入胶材深度)。The shielding layer 22 can be, but is not limited to, a hard metal layer or a hard inorganic layer, and its height (also referred to as thickness) is less than or equal to the total height of the micro light-emitting chip (for example, the sum of the height of the epitaxial layer and the height of the electrode) minus the The electrode is to be pressed into the glue material depth).

S1102:在基板本体20上形成一层粘附胶层21。S1102 : forming an adhesive layer 21 on the substrate body 20 .

应当理解的是,步骤S1101可与S1102同时执行,也可先执行S1101,再执行S1102,或先执行S1102,再执行S1101。It should be understood that step S1101 and S1102 may be performed simultaneously, or S1101 may be performed first, and then S1102, or S1102 may be performed first, and then S1101 may be performed.

S1103:将辅助基板40设置有遮挡层22的一面与基板本体20上的粘附胶层21高温解压贴合。S1103: Decompressing and bonding the surface of the auxiliary substrate 40 on which the shielding layer 22 is provided with the adhesive layer 21 on the substrate body 20 by high temperature decompression.

本步骤将遮挡层22与粘附胶层形成粘接,同时由于遮挡层22平面型好,在一定压力下可以压平粘附胶层21。In this step, the shielding layer 22 and the adhesive layer are bonded together. At the same time, because the shielding layer 22 has a good plane shape, the adhesive layer 21 can be flattened under a certain pressure.

S1104:将辅助基板40去除。S1104: Remove the auxiliary substrate 40.

可通过但不限于物理研磨、等离子刻蚀、化学腐蚀等方式将辅助基板20移除露出遮挡层22,可选地,遮挡层22的厚度可以预留一定的余量,以免辅助基板20移除导致遮挡层22厚度不足。The auxiliary substrate 20 can be removed to expose the shielding layer 22 through, but not limited to, physical grinding, plasma etching, chemical etching, etc. Optionally, the thickness of the shielding layer 22 can be reserved with a certain margin to prevent the auxiliary substrate 20 from being removed. As a result, the thickness of the shielding layer 22 is insufficient.

S1105:在遮挡层22上形成电极容纳孔24、溢出口25和遮挡墙27。S1105 : forming the electrode accommodating hole 24 , the overflow port 25 and the shielding wall 27 on the shielding layer 22 .

例如,可通过但不限于光刻、刻蚀使遮挡层22形成具有电极容纳孔24、溢出口25和遮挡墙27的图形,遮挡层22留出与微型发光芯片的电极对应的电极容纳孔24,电极容纳孔24的图形与微型发光芯片的电极相同,大小略大于微型发光芯片的电极,同时对应相邻微型发光芯片的芯片区域之间留出开口作为溢出口25,形状不限。形成的隔离墙27的高度加上遮挡层的高度=微型发光芯片的总高度(例如外延层的高度与电极的高度之和)减去电极欲压入胶材深度。For example, the shielding layer 22 can be formed into a pattern with electrode accommodating holes 24, overflow ports 25 and shielding walls 27 by, but not limited to, photolithography and etching, and the shielding layer 22 leaves electrode accommodating holes 24 corresponding to the electrodes of the micro light-emitting chip. The pattern of the electrode accommodating hole 24 is the same as the electrode of the micro light-emitting chip, and the size is slightly larger than the electrode of the micro light-emitting chip. The height of the formed isolation wall 27 plus the height of the blocking layer=the total height of the micro light-emitting chip (eg, the sum of the height of the epitaxial layer and the height of the electrode) minus the depth of the electrode to be pressed into the glue.

S1106:在遮挡层22上的电极容纳孔24和溢出口25内形成膨胀材料层26。S1106 : forming the expansion material layer 26 in the electrode receiving hole 24 and the overflow port 25 on the shielding layer 22 .

S1107:对电极容纳孔24中的膨胀材料层26的中间区域去除,保留电极容纳孔24侧壁上的膨胀材料层26;并将溢出口中的膨胀材料层26全部去除。S1107: Remove the middle area of the expansion material layer 26 in the electrode receiving hole 24, keep the expansion material layer 26 on the side wall of the electrode receiving hole 24; and remove all the expansion material layer 26 in the overflow port.

例如,可以通过在电极容纳孔24中通过涂覆、光刻等形成膨胀材料层26,其具有较大的热膨胀系数或吸水膨胀系数,形成缓冲物后,膨胀材料层26围合形成的开口的口径略大于微型发光芯片的电极的尺寸。For example, the expansion material layer 26 can be formed in the electrode accommodating hole 24 by coating, photolithography, etc., which has a larger thermal expansion coefficient or water absorption expansion coefficient. After the buffer is formed, the expansion material layer 26 encloses the formed opening. The aperture is slightly larger than the size of the electrodes of the micro light-emitting chip.

本发明另一可选实施例:Another optional embodiment of the present invention:

本实施例还提供了一种微型发光芯片转移方法,包括:This embodiment also provides a method for transferring a micro light-emitting chip, including:

将承载基板上承载有多颗待转移的微型发光芯片的一面,与上所述的临时基板设有粘附胶层一面对准压合,压合后微型发光芯片的各电极分别插入对应的电极容纳孔并嵌入粘附胶层内,压合过程中粘附胶层被挤压的一部分胶体通过所述溢出口溢出;Align and press the side of the carrier substrate carrying a plurality of micro-light-emitting chips to be transferred with the side of the temporary substrate provided with the adhesive layer, and each electrode of the micro-light-emitting chip is inserted into the corresponding The electrode accommodating hole is embedded in the adhesive layer, and a part of the colloid squeezed by the adhesive layer during the pressing process overflows through the overflow outlet;

将承载基板与微型发光芯片分离,完成将微型发光芯片转移至临时基板上。The carrier substrate is separated from the micro light-emitting chip, and the transfer of the micro light-emitting chip to the temporary substrate is completed.

为了便于理解,本实施例下面结合一种转移示例进行说明,请参见图12-1至图12-2所示,其包括但不限于:For ease of understanding, this embodiment is described below with reference to a transfer example, please refer to FIG. 12-1 to FIG. 12-2 , which include but are not limited to:

S1201:在承载基板30上生成微型发光芯片。S1201 : generating micro light-emitting chips on the carrier substrate 30 .

本示例中的承载基板30为生长基板,临时基板20为第一临时基板。当然,在一些应用场景中,承载基板30也可为第一临时基板,临时基板20为第二临时基板。The carrier substrate 30 in this example is a growth substrate, and the temporary substrate 20 is a first temporary substrate. Of course, in some application scenarios, the carrier substrate 30 may also be the first temporary substrate, and the temporary substrate 20 may be the second temporary substrate.

S1202:将承载基板30上生长有微型发光芯片的一面与一种示例的临时基板20上设置有遮挡层22的一面贴合。S1202: Laminating the side of the carrier substrate 30 on which the micro light-emitting chips are grown with the side of the temporary substrate 20 provided with the shielding layer 22 in an example.

承载基板30与临时基板20对位贴合,然后进行加热、加压。此时由于膨胀材料层26具有较大的热膨胀系数,其发生热膨胀后,会紧密贴合在微型发光芯片的电极32周围,形成密封;而后,微型发光芯片的电极32压入粘附胶层21的胶材之中,被挤出的胶材由于遮挡层22阻挡而不会突出于微型发光芯片两边或从微型发光芯片两电极之前突出,而是会被从溢出口中挤出,从而避免了胶材影响微型发光芯片;同时,隔离墙27的存在,使得即使压力过大,也可以防止微型发光芯片的电极32压入胶层深度异常,同时隔离墙27包裹于溢出口周围,防止了挤压出的胶材再流向微型发光芯片周围,隔离墙27围合形成的空间体积只需要确保挤压出的胶材高度不能触碰到承载基板30即可。The carrier substrate 30 and the temporary substrate 20 are aligned and bonded, and then heated and pressurized. At this time, since the expansion material layer 26 has a large thermal expansion coefficient, after thermal expansion, it will be closely attached around the electrode 32 of the micro light-emitting chip to form a seal; then, the electrode 32 of the micro light-emitting chip is pressed into the adhesive layer 21 Among the glue materials, the extruded glue material will not protrude from both sides of the micro light-emitting chip or in front of the two electrodes of the micro light-emitting chip due to the blocking layer 22, but will be extruded from the overflow port, thereby avoiding the need for glue. At the same time, the existence of the separation wall 27 prevents the electrode 32 of the micro light-emitting chip from being pressed into the adhesive layer to an abnormal depth even if the pressure is too large, and the separation wall 27 is wrapped around the overflow port to prevent extrusion The extruded glue material flows around the micro light-emitting chip, and the space volume enclosed by the partition wall 27 only needs to ensure that the height of the extruded glue material cannot touch the carrier substrate 30 .

S1203:将承载基板30与微型发光芯片分离。S1203: Separate the carrier substrate 30 from the micro light-emitting chip.

本步骤中,剥离承载基板30,温度下降后,膨胀材料层26将恢复到原始大小(膨胀材料层26采用吸水膨胀材料时,可通过加热等方式使其脱水而恢复到原始大小),不会影响微型发光芯片后续转移;然后通过弱化结构、转移头转移等方式,将微型发光芯片从临时基板转移至其他基板上或转移焊接至背板特定位置之上。In this step, the carrier substrate 30 is peeled off, and after the temperature drops, the expansion material layer 26 will return to its original size (when the expansion material layer 26 is made of a water-absorbing expansion material, it can be dehydrated by heating or the like to return to its original size). Affect the subsequent transfer of the micro light-emitting chip; and then transfer the micro light-emitting chip from the temporary substrate to other substrates or transfer and weld it to a specific position on the backplane by weakening the structure, transfer head transfer, etc.

需要说明的是,本申请所提供的微型发光芯片的转移方法不仅适用于微型发光芯片,还适用于其他具有类似转移过程的微型芯片,也适用于需要转移的普通尺寸的发光芯片。It should be noted that the transfer method for micro light-emitting chips provided in this application is not only applicable to micro light-emitting chips, but also to other micro-chips with similar transfer processes, and also to light-emitting chips of ordinary size that need to be transferred.

应当理解的是,本发明的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本发明所附权利要求的保护范围。It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.

Claims (10)

1.一种临时基板,其特征在于,包括:1. A temporary substrate, characterized in that, comprising: 基板本体;substrate body; 设置于所述基板本体上的粘附胶层;an adhesive layer disposed on the substrate body; 设置于所述粘附胶层上的遮挡层,所述遮挡层上具有多个芯片区域;所述芯片区域内设有至少两个与所述粘附胶层相通的电极容纳孔,以供微型发光芯片的至少两个电极分别插入并与所述粘附胶层形成粘接;至少一部分相邻的所述芯片区域之间设有供所述粘附胶层的胶体溢出的溢出口。A shielding layer disposed on the adhesive layer, the shielding layer has a plurality of chip areas; the chip area is provided with at least two electrode accommodating holes communicated with the adhesive layer for micro At least two electrodes of the light-emitting chip are respectively inserted and bonded with the adhesive layer; at least a part of the adjacent chip regions are provided with overflow ports for the colloid of the adhesive layer to overflow. 2.如权利要求1所述的临时基板,其特征在于,所有相邻的所述芯片区域之间设有供所述粘附胶层的胶体溢出的溢出口。2 . The temporary substrate according to claim 1 , wherein all adjacent chip regions are provided with overflow ports for the colloid of the adhesive layer to overflow. 3 . 3.如权利要求1所述的临时基板,其特征在于,所述遮挡层为金属层或无机材料层。3. The temporary substrate of claim 1, wherein the shielding layer is a metal layer or an inorganic material layer. 4.如权利要求1-3任一项所述的临时基板,其特征在于,所述临时基板还包括设置于所述电极容纳孔的侧壁上的膨胀材料层,所述膨胀材料层在所述电极插入所述电极容纳孔并与所述粘附胶层形成粘接后,在设定膨胀环境下产生膨胀,并与所述电极紧密贴合。4. The temporary substrate according to any one of claims 1 to 3, wherein the temporary substrate further comprises an intumescent material layer disposed on the sidewall of the electrode receiving hole, the intumescent material layer in the After the electrode is inserted into the electrode accommodating hole and forms a bond with the adhesive layer, it expands under a set expansion environment, and is closely attached to the electrode. 5.如权利要求4所述的临时基板,其特征在于,所述膨胀材料层为受热膨胀材料层或吸水膨胀材料层。5 . The temporary substrate of claim 4 , wherein the expansion material layer is a heat expansion material layer or a water absorption expansion material layer. 6 . 6.如权利要求1-3任一项所述的临时基板,其特征在于,所述临时基板还包括设置于所述遮挡层上,将所述溢出口与所述芯片区域隔离的隔离墙。6 . The temporary substrate according to claim 1 , wherein the temporary substrate further comprises an isolation wall disposed on the shielding layer to isolate the overflow port from the chip area. 7 . 7.一种临时基板的制作方法,其特征在于,包括:7. A method for making a temporary substrate, comprising: 在基板本体上形成粘附胶层;forming an adhesive layer on the substrate body; 在所述粘附胶层上形成遮挡层,所述遮挡层上具有多个芯片区域;forming a shielding layer on the adhesive layer, the shielding layer has a plurality of chip areas; 在所述芯片区域内形成至少两个与所述粘附胶层相通的电极容纳孔,以供微型发光芯片的至少两个电极分别插入并与所述粘附胶层形成粘接,以及在至少一部分相邻的所述芯片区域之间形成供所述粘附胶层的胶体溢出的溢出口。At least two electrode receiving holes communicated with the adhesive layer are formed in the chip area, so that at least two electrodes of the micro light-emitting chip can be respectively inserted and bonded with the adhesive layer, and at least two electrodes of the micro light-emitting chip can be inserted into the adhesive layer. An overflow port for the colloid of the adhesive layer to overflow is formed between a part of the adjacent chip regions. 8.如权利要求7所述的临时基板的制作方法,其特征在于,所述在所述芯片区域内形成至少两个与所述粘附胶层相通的电极容纳孔后,还包括:8 . The manufacturing method of the temporary substrate according to claim 7 , wherein after the forming at least two electrode receiving holes in the chip area that communicate with the adhesive layer, the method further comprises: 9 . 在所述电极容纳孔的侧壁上形成膨胀材料层,所述膨胀材料层在所述电极插入所述电极容纳孔并与所述粘附胶层形成粘接后,在设定膨胀环境下产生膨胀,并与所述电极紧密贴合。An expansion material layer is formed on the side wall of the electrode accommodating hole, and the expansion material layer is formed under a set expansion environment after the electrode is inserted into the electrode accommodating hole and forms a bond with the adhesive layer. expand and fit tightly with the electrode. 9.如权利要求7或8所述的临时基板的制作方法,其特征在于,所述在至少一部分相邻的所述芯片区域之间形成供所述粘附胶层的胶体溢出的溢出口后,还包括:9 . The manufacturing method of the temporary substrate according to claim 7 , wherein after forming an overflow port for the colloid of the adhesive layer to overflow between at least a part of the adjacent chip regions. 10 . ,Also includes: 在所述遮挡层上形成将所述溢出口与所述芯片区域隔离的隔离墙。A separation wall is formed on the shielding layer to isolate the overflow port from the chip area. 10.一种微型发光芯片转移方法,其特征在于,包括:10. A method for transferring miniature light-emitting chips, comprising: 将承载基板上承载有多颗待转移的微型发光芯片的一面,与如权利要求1-6任一项所述的临时基板设有所述粘附胶层一面对准压合,压合后所述微型发光芯片的各电极分别插入对应的所述电极容纳孔并嵌入所述粘附胶层内,压合过程中所述粘附胶层被挤压的一部分胶体通过所述溢出口溢出;Align and press the side of the carrier substrate carrying the micro-light-emitting chips to be transferred with the side of the temporary substrate provided with the adhesive layer according to any one of claims 1-6. Each electrode of the micro light-emitting chip is respectively inserted into the corresponding electrode accommodating hole and embedded in the adhesive layer, and a part of the colloid squeezed by the adhesive layer during the pressing process overflows through the overflow port; 将所述承载基板与所述微型发光芯片分离,完成将所述微型发光芯片转移至所述临时基板上。The carrier substrate is separated from the micro light-emitting chip, and the transfer of the micro light-emitting chip to the temporary substrate is completed.
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CN115206861A (en) * 2022-06-28 2022-10-18 上海天马微电子有限公司 Transfer substrate, chip transfer method and display device
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CN116544323A (en) * 2023-07-06 2023-08-04 江西兆驰半导体有限公司 A kind of preparation method of LED chip and LED chip

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