CN114136068A - Wafer drying system and wafer drying method - Google Patents
Wafer drying system and wafer drying method Download PDFInfo
- Publication number
- CN114136068A CN114136068A CN202111414747.8A CN202111414747A CN114136068A CN 114136068 A CN114136068 A CN 114136068A CN 202111414747 A CN202111414747 A CN 202111414747A CN 114136068 A CN114136068 A CN 114136068A
- Authority
- CN
- China
- Prior art keywords
- wafer
- drying
- liquid
- gas
- gradient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001035 drying Methods 0.000 title claims abstract description 122
- 239000007788 liquid Substances 0.000 claims description 101
- 239000007789 gas Substances 0.000 claims description 67
- 238000010926 purge Methods 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 26
- 230000009471 action Effects 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 10
- 238000010408 sweeping Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 121
- 238000000034 method Methods 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B11/00—Machines or apparatus for drying solid materials or objects with movement which is non-progressive
- F26B11/18—Machines or apparatus for drying solid materials or objects with movement which is non-progressive on or in moving dishes, trays, pans, or other mainly-open receptacles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/06—Controlling, e.g. regulating, parameters of gas supply
- F26B21/10—Temperature; Pressure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/06—Chambers, containers, or receptacles
- F26B25/14—Chambers, containers, receptacles of simple construction
- F26B25/18—Chambers, containers, receptacles of simple construction mainly open, e.g. dish, tray, pan, rack
- F26B25/185—Spacers; Elements for supporting the goods to be dried, i.e. positioned in-between the goods to build a ventilated stack
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer drying system and a wafer drying method. The wafer drying system includes: a rotary double-sided gradient drying device; the rotary double-sided drying device comprises: the rotary chuck is suitable for fixing the wafer from the side part to horizontally rotate; a gradient drying assembly comprising an upper assembly and a lower assembly, the spin chuck being positioned between the upper assembly and the lower assembly; the gradient drying component is suitable for simultaneously carrying out gradient drying on the wafer from the upper side and the lower side when the wafer rotates horizontally.
Description
Technical Field
The invention relates to the technical field of wafer manufacturing, in particular to a wafer drying system and a wafer drying method.
Background
With the development of the integrated circuit manufacturing technology, the requirement on the surface cleanliness of the wafer in the process control is higher and higher, and after a large number of wet processes and cleaning processes, the efficient and stable drying process can effectively ensure the surface cleanliness and prevent the occurrence of a secondary contamination phenomenon; one process of the prior art is centrifugal spin-drying. Centrifugal drying is a drying technique in which a single wafer or a plurality of wafers in a fixed state is rotated at a high speed within a short time by an external force, and a liquid film on the surface of the wafer is separated from the surface by the action of the centrifugal force. The drying mode is simple and reliable, and is widely applied to the field of wafer cleaning. However, the drying method of high-speed spin-drying has uncontrollable airflow turbulence degree in the inner space of the cavity, larger risk of secondary contamination, and lower applicability of the high-end process due to larger surface acting force generated by high-speed rotation and airflow and water flow impact. Therefore, a new process for drying the wafer is needed to reduce or avoid the above problems.
Disclosure of Invention
The invention provides a wafer drying system, comprising: a rotary double-sided gradient drying device; the rotary double-sided drying device comprises: the rotary chuck is suitable for fixing the wafer from the side part to horizontally rotate; a gradient drying assembly comprising an upper assembly and a lower assembly, the spin chuck being positioned between the upper assembly and the lower assembly; the gradient drying component is suitable for simultaneously carrying out gradient drying on the wafer from the upper side and the lower side when the wafer rotates horizontally.
Optionally, the rotating chuck is of a vertically symmetrical structure, and a distance from any point on the rotating chuck to the upper assembly is equal to a distance from any point on the rotating chuck to the lower assembly.
Optionally, the upper assembly comprises: the heating head, the blowing gas nozzle and the guide liquid nozzle of the upper component are movably arranged on the moving guide rail of the upper component and are suitable for moving along the moving guide rail; the lower assembly includes: the heating head, the blowing gas nozzle and the flow guide liquid nozzle of the lower component are movably arranged on the moving guide rail of the lower component and are suitable for moving along the moving guide rail.
Optionally, the lower assembly is fixed on the base through a support column; the support column is sleeved with an annular rotating mechanism with a hollow center, and the rotating chuck is connected and fixed on the annular rotating mechanism. The annular rotating mechanism is suitable for rotating around the supporting column horizontally
Optionally, the wafer drying system further includes: the gas-liquid supply device is communicated with the flow guide liquid nozzle and the sweeping gas nozzle in the upper component through an upper conveying pipeline; the gas-liquid supply device is communicated with a guide liquid nozzle and a sweeping gas nozzle in the lower assembly through a lower conveying pipeline.
Optionally, the support column has a hollow passage therein, and the lower delivery line passes through the hollow passage and communicates with the liquid guide nozzle and the purge gas nozzle in the lower module.
Optionally, the gas-liquid supply device comprises a gas source, a gas heating device, a liquid source and a liquid cooling device; the gas source is respectively communicated with the sweeping gas nozzle of the upper component and the sweeping gas nozzle of the lower component through the upper conveying pipeline and the lower conveying pipeline, and the gas heating device is suitable for heating the sweeping gas conveyed by the gas source; the liquid source is respectively communicated with the sweeping gas nozzle of the upper component and the sweeping gas nozzle of the lower component through the upper conveying pipeline and the lower conveying pipeline, and the liquid cooling device is suitable for cooling guide liquid conveyed by the liquid source.
The invention also provides a wafer drying method, and the wafer drying system provided by the invention is used for synchronously drying the upper side and the lower side of the wafer in a rotating gradient manner; wherein, the wafer is fixed by the rotating chuck to rotate horizontally; the gradient drying component performs gradient drying from the center of the wafer to the edge of the wafer.
Optionally, the step of gradient drying comprises: the gradient drying component lays a diversion liquid on the surface of the wafer, and the diversion liquid is paved on the surface of the wafer under the action of centrifugal force generated when the wafer rotates to form a diversion liquid film; the gradient drying component sprays purging gas to the surface of the wafer, and purges a diversion liquid film from the center of the wafer to the edge of the wafer; the gradient drying component moves from the center of the wafer to the edge of the wafer to heat the diversion liquid film, so that the diversion liquid film forms a heat gradient from the center of the wafer to the edge of the wafer; the liquid guide film is gradually separated from the surface of the wafer under the action of heat gradient, gas purging and horizontal rotation of the wafer, so that the wafer is dried.
The technical scheme of the invention has the following advantages:
1. the wafer drying system provided by the invention can fix the wafer to horizontally rotate through the rotating chuck, and meanwhile, the gradient drying components are arranged on the upper side and the lower side, so that gradient drying can be simultaneously carried out on the upper side and the lower side of the wafer. Can realize the rotation of wafer through spin chuck, applicable centrifugal drying combines the two-sided gradient drying of wafer simultaneously, and the upper and lower two sides carry out efficiency simultaneously on the one hand higher, and on the other hand can use lower rotational speed in simple centrifugal drying, reduces the risk that the secondary stained. Meanwhile, high-speed rotation is not needed, the impact action of air flow and liquid flow on the surface of the wafer is small, the impact damage to the wafer is small, and a high-precision wafer manufacturing process can be used.
2. According to the wafer drying method provided by the invention, by using the wafer drying system provided by the invention, the wafer can be kept in horizontal rotation in the drying process, the centrifugal drying effect is realized, and simultaneously, the upper surface and the lower surface of the wafer can be simultaneously subjected to gradient drying, so that on one hand, the efficiency of simultaneously performing the upper surface and the lower surface is higher, and on the other hand, compared with the simple centrifugal drying, the lower rotating speed can be used, and the risk of secondary contamination is reduced. Meanwhile, high-speed rotation is not needed, the impact action of air flow and liquid flow on the surface of the wafer is small, the impact damage to the wafer is small, and a high-precision wafer manufacturing process can be used.
3. According to the wafer drying method provided by the invention, the diversion liquid uses water, and the sweeping gas uses nitrogen, so that the wafer drying method is safe and reliable.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a wafer drying system according to the present invention;
FIG. 2 is a top view of a partial structure of a wafer drying system according to the present invention;
fig. 3 is a schematic flow chart of a wafer drying method according to the present invention.
Detailed Description
To solve the aforementioned drawbacks in wafer drying, the present invention provides a wafer drying system, comprising: a rotary double-sided gradient drying device; the rotary double-sided drying device comprises: the rotary chuck is suitable for fixing the wafer from the side part to horizontally rotate; a gradient drying assembly comprising an upper assembly and a lower assembly, the spin chuck being positioned between the upper assembly and the lower assembly; the gradient drying component is suitable for simultaneously carrying out gradient drying on the wafer from the upper side and the lower side when the wafer rotates horizontally.
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 1-2, the present embodiment provides a wafer drying system, including:
a rotary double-sided gradient drying device; the rotary double-sided drying device comprises:
the spin chuck 3 is adapted to hold the wafer 14 from the side for horizontal rotation.
A gradient drying assembly comprising an upper assembly and a lower assembly with a spin chuck 3 located therebetween. The gradient drying component is suitable for simultaneously carrying out gradient drying on the wafer from the upper side and the lower side when the wafer rotates horizontally.
The wafer drying system provided by the embodiment can fix the wafer 14 to rotate horizontally through the spin chuck 3, and simultaneously, the gradient drying components are arranged on the upper side and the lower side, so that the gradient drying can be simultaneously performed on the upper side and the lower side of the wafer. Can realize the horizontal rotation of wafer 14 through spin chuck 3, applicable centrifugal drying combines the two-sided gradient drying of wafer simultaneously, and the upper and lower two sides carry out efficiency simultaneously on the one hand higher, and on the other hand can use lower rotational speed in comparison with simple centrifugal drying, reduces the risk that the secondary stained. Meanwhile, high-speed rotation is not needed, the impact action of air flow and liquid flow on the surface of the wafer 14 is small, the impact damage to the wafer is small, and high-precision wafer manufacturing can be used.
Further, the upper assembly includes: the upper assembly comprises a moving guide rail 4, a heating head 5, a purging gas nozzle 6 and a flow guide liquid nozzle 7, wherein the heating head 5, the flow guide liquid nozzle 7 and the purging gas nozzle 6 of the upper assembly are movably arranged on the moving guide rail 4 of the upper assembly and are suitable for moving along the moving guide rail 4.
Like the upper assembly, the lower assembly includes: the heating head, the blowing gas nozzle and the flow guide liquid nozzle of the lower component are movably arranged on the moving guide rail of the lower component and are suitable for moving along the moving guide rail.
Further, in some embodiments, the upper assembly and the lower assembly have the same arrangement order of the components. For example, as shown in fig. 1, the upper module is arranged in the order of the heating head 5, the purge gas nozzle 6, and the guide liquid nozzle 7, and the lower module has the same arrangement order of the respective modules as the upper module.
Further, in some embodiments, the spin chuck 3 is configured to be vertically symmetrical, and the distance between the upper surface of the wafer 14 and the upper assembly is equal to the distance between the lower surface of the wafer and the lower assembly.
This allows the gradient heating conditions on the top and bottom surfaces of the wafer 14 to be substantially uniform, so that the drying effect on the top and bottom surfaces of the wafer is substantially uniform in the same drying step.
Further, the lower assembly is fixed to the base 1 by support posts (not numbered in the figure). The support column is sleeved with a central hollow annular rotating mechanism 2, and the rotating chuck 3 is connected and fixed on the annular rotating mechanism 2. The ring rotation mechanism 2 is adapted to rotate horizontally around the support column, for example by means of a motor or transmission on the side. Thereby driving the spin chuck 3 to rotate horizontally, and further driving the spin chuck 3 to rotate the wafer fixed by the jaws horizontally with the spin chuck 3.
Further, the wafer drying system further comprises: a gas-liquid supply device. The gas-liquid supply device is communicated with a purging gas nozzle 6 and a diversion liquid nozzle 7 in the upper assembly through an upper conveying pipeline. The gas-liquid supply device is communicated with the purging gas nozzle and the diversion liquid nozzle in the lower assembly through a lower conveying pipeline. Specifically, go up pipeline and lower pipeline and all include gas line and liquid line, and gas line is used for carrying gas, and liquid line is used for carrying liquid, and both do not communicate. For the sake of convenience, they will not be described separately below.
In this embodiment, the support column has a hollow passage therein through which the lower delivery line communicates to the purge gas nozzle 6 and the guide liquid nozzle 7 in the lower module. Furthermore, the upper assembly is also fixedly connected to the base 1, the specific connection mechanism not being shown in fig. 1 and 2.
Specifically, the gas-liquid supply device comprises a gas source 13, a gas heating device 11, a liquid source 12 and a liquid cooling device 10. The gas source 13 is respectively communicated with the purge gas nozzle 6 of the upper component and the purge gas nozzle of the lower component through an upper conveying pipeline and a lower conveying pipeline, and the gas heating device 11 is suitable for heating the purge gas conveyed by the gas source 13. The liquid source 12 is respectively communicated with the diversion liquid nozzle 7 of the upper assembly and the diversion liquid nozzle of the lower assembly through an upper conveying pipeline and a lower conveying pipeline, and the liquid cooling device 10 is suitable for cooling the diversion liquid conveyed by the liquid source 12.
Example 2
Referring to fig. 1 to 3, the present embodiment provides a wafer drying method, which uses the wafer drying system provided in embodiment 1 to perform synchronous spin gradient drying on the upper and lower sides of the wafer.
Wherein, the wafer is fixed by the rotating chuck to rotate horizontally; the gradient drying component performs gradient drying from the center of the wafer to the edge of the wafer.
Specifically, the step of gradient drying comprises:
the gradient drying component lays a diversion liquid on the surface of the wafer, and the diversion liquid is paved on the surface of the wafer to form a diversion liquid film under the action of centrifugal force generated when the wafer rotates.
And the gradient drying component sprays purging gas to the surface of the wafer, and purges the diversion liquid film from the center of the wafer to the edge of the wafer.
The gradient drying component moves from the center of the wafer to the edge of the wafer to heat the diversion liquid film, so that the diversion liquid film forms a heat gradient from the center of the wafer to the edge of the wafer.
The liquid guide film is gradually separated from the surface of the wafer under the actions of heat gradient, gas purging and horizontal rotation of the wafer.
In a particular embodiment, the method comprises the following steps:
placing a wafer to be dried into a drying station by a manipulator, enabling the front side of the wafer to face upwards, clamping the wafer by a rotating chuck, moving a diversion liquid nozzle to the center position of the wafer, starting low-speed rotation (the rotating speed is generally less than or equal to 500RPM) of the wafer, simultaneously spraying diversion liquid which is refrigerated to a set temperature (the temperature is 0-25 ℃ can be adjusted) to the center of the wafer according to a set flow rate, executing according to a set time length, fully spreading the diversion liquid on the wafer under the action of centrifugal force, and forming a diversion liquid film on the surface of the wafer.
After the diversion liquid film is spread on the front side and the back side of the wafer, the flow of the diversion liquid is reduced (generally less than 300ml/min), the purging is heated to a set temperature (generally not too high so as to avoid weakening the radial temperature gradient difference of the liquid film) through a gas heating device, the purging gas provided by the upper assembly and the lower assembly is sprayed to the diversion liquid film according to the set flow, power is provided for peeling the liquid film through viscous force, and meanwhile, the heating head, the purging gas nozzle and the diversion liquid nozzle slowly move at a set speed according to the directions of arrows shown in the figures 1 and 2, the purging from the center to the edge is realized (the speed can be controlled in a segmented mode, and the radial speed can be adjusted).
When the purging gas nozzle moves to the center of the wafer, the heating head is opened according to the set temperature and power, so that the temperature of the liquid guide film at the center of the wafer is increased, the temperature of the spread liquid guide film far away from the center is lower, a temperature gradient is formed, a thermal Marangoni effect is induced in the process that the liquid guide film is separated from the surface of the wafer to promote drying, the heating head, the purging gas nozzle and the liquid guide nozzle continue to move from the center to the edge, and the liquid guide film is gradually separated from the surface of the wafer under the actions of the heat gradient, gas purging and horizontal rotation of the wafer.
In other embodiments, a final centrifugal drying step is included. Specifically, after the nozzle module is integrally moved out of the edge of the wafer, the wafer finishes a liquid film separation process, the diversion liquid nozzle, the purge gas nozzle and the heating head are sequentially closed, and the wafer is accelerated to rotate (the rotating speed is usually lower than 800rpm) to finish a drying process of the final residual extremely thin diversion liquid film on the surface of the wafer according to a set speed and time.
According to the wafer drying method provided by the embodiment, by using the wafer drying system provided by the embodiment 1, the wafer can be kept in horizontal rotation in the drying process, the centrifugal drying effect is realized, and meanwhile, the upper surface and the lower surface of the wafer can be simultaneously subjected to gradient drying, so that on one hand, the efficiency is higher when the upper surface and the lower surface are simultaneously subjected to gradient drying, and on the other hand, compared with the simple centrifugal drying, the lower rotating speed can be used, and the risk of secondary contamination is reduced. Meanwhile, high-speed rotation is not needed, the impact action of air flow and liquid flow on the surface of the wafer is small, the impact damage to the wafer is small, and a high-precision wafer manufacturing process can be used.
In some embodiments. The flow guiding liquid is water, and the purging gas is nitrogen. Therefore, the IPA (isopropyl alcohol) medium which is common in the conventional gradient drying can be avoided, and potential safety hazards are avoided. The operability is strong.
The present invention has been described above by way of examples, and it is believed that one skilled in the art can appreciate the present invention by way of the above examples. It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A wafer drying system, comprising:
a rotary double-sided gradient drying device; the rotary double-sided drying device comprises:
the rotary chuck is suitable for fixing the wafer from the side part to horizontally rotate;
a gradient drying assembly comprising an upper assembly and a lower assembly, the spin chuck being located between the upper assembly and the lower assembly; the gradient drying component is suitable for simultaneously carrying out gradient drying on the wafer from the upper side and the lower side when the wafer rotates horizontally.
2. The wafer drying system of claim 1,
the upper assembly includes: the heating head, the purging gas nozzle and the flow guide liquid nozzle of the upper assembly are movably mounted on the moving guide rail of the upper assembly and are suitable for moving along the moving guide rail;
the lower assembly includes: the heating head, the purging gas nozzle and the flow guide liquid nozzle of the lower component are movably arranged on the moving guide rail of the lower component and are suitable for moving along the moving guide rail.
3. The wafer drying system of claim 2,
the position sequence of the heating head, the flow guiding liquid nozzle and the purging gas nozzle in the upper assembly on the guide rail of the upper assembly is the same as the position sequence of the heating head, the flow guiding liquid nozzle and the purging gas nozzle in the lower assembly on the moving guide rail of the lower assembly.
4. The wafer drying system of claim 2,
the lower component is fixed on the base through a support column;
the support column is sleeved with an annular rotating mechanism with a hollow center, the rotating chuck is fixedly connected with the annular rotating mechanism, and the annular rotating mechanism is suitable for surrounding the support column to rotate horizontally.
5. The wafer drying system of claim 4, further comprising:
the gas-liquid supply device is communicated with the purging gas nozzle and the diversion liquid nozzle in the upper component through an upper conveying pipeline; and the gas-liquid supply device is communicated with the purging gas nozzle and the diversion liquid nozzle in the lower component through a lower conveying pipeline.
6. The wafer drying system of claim 5,
the support column is provided with a hollow channel, and the lower conveying pipeline penetrates through the hollow channel to be communicated to a purging gas nozzle and a flow guiding liquid nozzle in the lower assembly.
7. The wafer drying system of claim 5,
the gas-liquid supply device comprises a gas source, a gas heating device, a liquid source and a liquid cooling device; the gas source is respectively communicated with the purge gas nozzle of the upper assembly and the purge gas nozzle of the lower assembly through the upper conveying pipeline and the lower conveying pipeline, and the gas heating device is suitable for heating the purge gas conveyed by the gas source; the liquid source is respectively communicated with the sweeping gas nozzle of the upper component and the sweeping gas nozzle of the lower component through the upper conveying pipeline and the lower conveying pipeline, and the liquid cooling device is suitable for cooling diversion liquid conveyed by the liquid source.
8. A wafer drying method, characterized in that, the wafer drying system according to any one of claims 1-7 is used to perform synchronous rotary gradient drying on the upper and lower sides of the wafer;
the wafer is fixed by the rotating chuck to horizontally rotate; the gradient drying component performs gradient drying from the center of the wafer to the edge of the wafer.
9. The wafer drying method of claim 8, wherein the step of gradient drying comprises:
the gradient drying component lays a diversion liquid on the surface of the wafer, and the diversion liquid is paved on the surface of the wafer under the action of centrifugal force generated when the wafer rotates to form a diversion liquid film;
the gradient drying component sprays purge gas to the surface of the wafer, and the diversion liquid film is purged from the center of the wafer to the edge of the wafer;
the gradient drying component moves from the center of the wafer to the edge of the wafer to heat the diversion liquid film, so that the diversion liquid film forms a heat gradient from the center of the wafer to the edge of the wafer;
the diversion liquid film is gradually separated from the surface of the wafer under the actions of heat gradient, gas purging and horizontal rotation of the wafer;
and stopping laying of the diversion liquid, gas purging and heating in sequence, and accelerating rotation of the wafer so as to carry out centrifugal drying on the residual diversion liquid film.
10. The wafer drying method as set forth in claim 9,
the flow guiding liquid is water, and the purging gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111414747.8A CN114136068A (en) | 2021-11-25 | 2021-11-25 | Wafer drying system and wafer drying method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111414747.8A CN114136068A (en) | 2021-11-25 | 2021-11-25 | Wafer drying system and wafer drying method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114136068A true CN114136068A (en) | 2022-03-04 |
Family
ID=80391866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111414747.8A Pending CN114136068A (en) | 2021-11-25 | 2021-11-25 | Wafer drying system and wafer drying method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114136068A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497461A (en) * | 2023-12-29 | 2024-02-02 | 无锡尚积半导体科技有限公司 | Wafer coating pretreatment device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101015040A (en) * | 2004-09-09 | 2007-08-08 | 东京毅力科创株式会社 | Substrate cleaning method and developing apparatus |
| US20150303078A1 (en) * | 2014-04-16 | 2015-10-22 | Ebara Corporation | Substrate drying apparatus, storage medium, and substrate drying method |
| CN205488060U (en) * | 2016-03-04 | 2016-08-17 | 和舰科技(苏州)有限公司 | Wafer cleaning device |
| CN111243979A (en) * | 2018-11-28 | 2020-06-05 | 长鑫存储技术有限公司 | Single wafer type wafer cleaning equipment and cleaning and drying method |
| WO2020116164A1 (en) * | 2018-12-03 | 2020-06-11 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing device |
| CN212517137U (en) * | 2021-01-14 | 2021-02-09 | 西安奕斯伟硅片技术有限公司 | Wafer cleaning and drying equipment and wafer processing equipment |
| CN113097121A (en) * | 2021-03-30 | 2021-07-09 | 上海华力微电子有限公司 | Wafer cleaning device and cleaning method |
| CN113690164A (en) * | 2021-09-16 | 2021-11-23 | 西安奕斯伟材料科技有限公司 | Wafer cleaning and drying device and wafer cleaning and drying method |
-
2021
- 2021-11-25 CN CN202111414747.8A patent/CN114136068A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101015040A (en) * | 2004-09-09 | 2007-08-08 | 东京毅力科创株式会社 | Substrate cleaning method and developing apparatus |
| US20150303078A1 (en) * | 2014-04-16 | 2015-10-22 | Ebara Corporation | Substrate drying apparatus, storage medium, and substrate drying method |
| CN205488060U (en) * | 2016-03-04 | 2016-08-17 | 和舰科技(苏州)有限公司 | Wafer cleaning device |
| CN111243979A (en) * | 2018-11-28 | 2020-06-05 | 长鑫存储技术有限公司 | Single wafer type wafer cleaning equipment and cleaning and drying method |
| WO2020116164A1 (en) * | 2018-12-03 | 2020-06-11 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing device |
| CN212517137U (en) * | 2021-01-14 | 2021-02-09 | 西安奕斯伟硅片技术有限公司 | Wafer cleaning and drying equipment and wafer processing equipment |
| CN113097121A (en) * | 2021-03-30 | 2021-07-09 | 上海华力微电子有限公司 | Wafer cleaning device and cleaning method |
| CN113690164A (en) * | 2021-09-16 | 2021-11-23 | 西安奕斯伟材料科技有限公司 | Wafer cleaning and drying device and wafer cleaning and drying method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497461A (en) * | 2023-12-29 | 2024-02-02 | 无锡尚积半导体科技有限公司 | Wafer coating pretreatment device |
| CN117497461B (en) * | 2023-12-29 | 2024-04-12 | 无锡尚积半导体科技有限公司 | Wafer coating pre-treatment device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11335587B2 (en) | Substrate processing apparatus and substrate processing meihod | |
| TWI645456B (en) | Substrate processing apparatus and substrate processing method | |
| CN108305842B (en) | Substrate processing method and substrate processing apparatus | |
| JP6131162B2 (en) | Substrate processing method and substrate processing apparatus | |
| US20200303201A1 (en) | Substrate processing device and substrate processing method for carrying out chemical treatment for substrate | |
| TWI668729B (en) | Substrate processing apparatus and substrate processing method | |
| US9403187B2 (en) | Substrate processing method and substrate processing apparatus | |
| US9340761B2 (en) | Substrate processing method and substrate processing apparatus | |
| CN107393851A (en) | Substrate board treatment and substrate processing method using same | |
| US20200398302A1 (en) | Substrate treatment apparatus | |
| WO2018179945A1 (en) | Substrate processing device and substrate processing method | |
| US20190013217A1 (en) | Substrate processing apparatus, substrate processing method and recording medium | |
| US20080083501A1 (en) | Substrate processing apparatus | |
| US10770284B2 (en) | Substrate processing method and substrate processing apparatus | |
| US6573191B1 (en) | Insulating film forming method and insulating film forming apparatus | |
| KR102652519B1 (en) | Substrate processing apparatus and substrate processing method | |
| CN114136068A (en) | Wafer drying system and wafer drying method | |
| JP2013207272A (en) | Substrate processing apparatus | |
| US11551935B2 (en) | Substrate processing method and substrate processing apparatus | |
| JP2019057676A (en) | Substrate processing method and substrate processing apparatus | |
| JP2020021945A (en) | Substrate processing apparatus and substrate processing method | |
| CN119446977A (en) | Wafer drying method and drying device | |
| CN109509714A (en) | Substrate processing method using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Applicant after: Beijing Jingyi Precision Technology Co.,Ltd. Address before: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Applicant before: Beijing ShuoKe precision electronic equipment Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220304 |
|
| RJ01 | Rejection of invention patent application after publication |