CN113295913A - Power module structure of integrated current sensor - Google Patents
Power module structure of integrated current sensor Download PDFInfo
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- CN113295913A CN113295913A CN202110594472.4A CN202110594472A CN113295913A CN 113295913 A CN113295913 A CN 113295913A CN 202110594472 A CN202110594472 A CN 202110594472A CN 113295913 A CN113295913 A CN 113295913A
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- 239000000919 ceramic Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 230000006698 induction Effects 0.000 claims abstract description 35
- 238000001746 injection moulding Methods 0.000 claims description 7
- 230000035699 permeability Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 238000002788 crimping Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/18—Screening arrangements against electric or magnetic fields, e.g. against earth's field
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermal Sciences (AREA)
- Inverter Devices (AREA)
Abstract
本发明公开了一种集成电流传感器的功率模块结构，本结构包括散热器、塑壳、覆铜陶瓷基板、晶圆、盖板和交流母排，覆铜陶瓷基板设于散热器表面，晶圆设于覆铜陶瓷基板构成控制电路，塑壳设于散热器并包覆覆铜陶瓷基板，交流母排连接覆铜陶瓷基板并伸出塑壳，盖板设于塑壳顶面，本结构还包括电流感应芯片、电流感应板和金属屏蔽罩，电流感应芯片焊接于电流感应板，电流感应板设于塑壳并正对伸出塑壳的交流母排，金属屏蔽罩包裹交流母排和电流感应板，电流感应芯片检测交流母排的电流信号。本结构提高功率模块与电流传感器的集成度，避免采集的电流信号被干扰或干扰其他信号，提高电流采样精度和采样可靠性，确保功率模块的功率密度，降低成本。
The invention discloses a power module structure integrating a current sensor. The structure comprises a radiator, a plastic case, a copper-clad ceramic substrate, a wafer, a cover plate and an AC busbar. The copper-clad ceramic substrate is arranged on the surface of the radiator, and the wafer The control circuit is formed on the copper-clad ceramic substrate. The plastic case is arranged on the radiator and covers the copper-clad ceramic substrate. The AC busbar is connected to the copper-clad ceramic substrate and extends out of the plastic case. The cover plate is arranged on the top surface of the plastic case. It includes a current sensing chip, a current sensing board and a metal shield. The current sensing chip is welded to the current sensing board. The current sensing board is located in the plastic case and faces the AC busbar extending out of the plastic case. The metal shielding cover wraps the AC busbar and the current The induction board, the current induction chip detects the current signal of the AC busbar. The structure improves the integration of the power module and the current sensor, prevents the collected current signal from being interfered with or interferes with other signals, improves the current sampling accuracy and sampling reliability, ensures the power density of the power module, and reduces the cost.
Description
Technical Field
The invention relates to the technical field of power semiconductors, in particular to a power module structure of an integrated current sensor.
Background
The power module is formed by combining and packaging wafers into a whole according to certain functions, has the advantages of small size, high power density and the like, and is widely applied to the field of new energy automobiles. With the development of high power and long endurance of new energy vehicles, the application environment of the power module is increasingly severe, and the integration of the power module is widely concerned.
As shown in fig. 1, the output signal of the current sensor is connected to the control board and detects the current signal flowing through the ac busbar, and when the current sensor detects the current of the ac busbar, according to the formula (1),
wherein B is a magnetic field passing through the current sensor, K is a coefficient, I is a current of the AC busbar, and W1The width of the alternating current busbar is shown, and h is the distance between the alternating current busbar and the current sensor.
It can be seen that the magnitude of the magnetic field B passing through the current sensor depends greatly on the width W of the AC bus bar1And the distance h between the alternating current busbar and the current sensor. In an actual manufacturing process, when the current sensor is mounted on the ac busbar, if a deviation occurs in the distance h between the two components, a measurement error of the current becomes large. In addition, when the structure is applied to occasions with large vibration such as new energy automobiles, the distance h is easy to change due to the influence of the vibration, and the measurement error of the current value is increased.
As shown in fig. 2 and 3, in a conventional new energy vehicle inverter, a current sensor 6 is generally used to detect a current value of an ac busbar 4 in a three-phase ac controller, a conventional power module is composed of a heat sink 1, a plastic casing 2, a copper-clad ceramic substrate 7 and a wafer 8, the copper-clad ceramic substrate 7 is disposed on a surface of the heat sink 1, the wafer 8 is disposed on the copper-clad ceramic substrate 7 to form a control circuit, the plastic casing 2 is disposed on the heat sink 1 and covers the copper-clad ceramic substrate 7, the ac busbar 4 is connected to the copper-clad ceramic substrate 7, a control board 3 of the controller is located on a top surface of the plastic casing 2, since the power module and the current sensor 6 are two independent components, a detection signal of the current sensor 6 needs to be transmitted to the control board 3, and the detection signal is generally transmitted to the control board 3 by using a signal line; the current sensor 6 needs to be fixedly installed and the alternating current busbar 4 needs to penetrate through the current sensor 6, so that a part of space needs to be reserved for installing and fixing the current sensor 6 by the controller; and because the current signal is transmitted by adopting a signal wire mode, the current signal is easily interfered by external environment or other signals, and is influenced by the vehicle running vibration, the relative displacement can be generated between the current sensor 6 and the alternating current bus bar 4, and the reliability of the new energy automobile inverter is reduced. At the present stage, the new energy automobile driving controller requires higher power density and lower cost, and the conventional independent arrangement mode of the power module and the current sensor cannot meet the application requirement of the vehicle-mounted driving power module.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a power module structure of an integrated current sensor, which overcomes the defects of the traditional power module, improves the integration level of the power module and the current sensor, avoids the collected current signals from being interfered or interfering other signals, improves the sampling precision and the sampling reliability of the current, ensures the power density of the power module and reduces the cost.
In order to solve the above technical problems, the power module structure of the integrated current sensor of the present invention comprises a heat sink, a plastic housing, a copper-clad ceramic substrate, a wafer, a cover plate and an ac busbar, the copper-clad ceramic substrate is arranged on the surface of the radiator, the wafer is arranged on the copper-clad ceramic substrate to form a control circuit, the plastic shell is arranged on the radiator and covers the copper-clad ceramic substrate, the alternating current busbar is connected with the copper-clad ceramic substrate and extends out of the plastic shell, the cover plate is arranged on the top surface of the plastic shell, the structure also comprises a current induction chip, a current induction plate and a metal shielding cover, the current induction chip is welded on the current induction plate, the current induction plate is arranged on the plastic shell and is opposite to an alternating current bus bar extending out of the plastic shell, the metal shielding case wraps the alternating current busbar and the current induction plate, and the current induction chip detects a current signal of the alternating current busbar.
Further, this structure still includes drive control board, drive signal pin needle and current signal connector pin needle, drive control board locates the apron top surface, drive signal pin needle is located drive control board and extension are connected to cover copper ceramic substrate by the control circuit that the wafer constitutes, current signal connector pin needle is connected current induction board and drive control board, the highly uniform of drive signal pin needle and current signal connector pin needle.
Furthermore, the pin of the current signal connector is connected with the driving control board through welding or crimping.
Further, the metal shielding case is a C-shaped case, and the height of the opening end is lower than that of the driving control board and higher than that of the current sensing chip.
Furthermore, the metal shielding case is a C-shaped case formed by bending a metal flat plate twice, the opening width of the C-shaped case is greater than the width of the alternating current busbar, and the opening end is used for arranging the pin of the current signal connector to extend and connect to the driving control board.
Further, the plastic shell is provided with a buckle at the extension part of the alternating current busbar, and the current induction plate is arranged on the plastic shell through the buckle or the bonding and is positioned between the alternating current busbar and the driving control board.
Further, the plastic shell is formed by resin injection molding, the alternating current busbar and the plastic shell are integrally formed by injection molding, and the metal shielding cover and the plastic shell are integrally formed by injection molding or are fixed on the plastic shell by adopting an adhesive.
Further, the magnetic permeability of the metal shielding case is greater than or equal to 1000.
Further, the cross-sectional area of the alternating-current busbar in the metal shielding cover is greater than or equal to 5mm, the alternating-current busbar is welded on the copper-clad ceramic substrate by adopting ultrasonic waves, the distance length from the position where the alternating-current busbar is welded on the copper-clad ceramic substrate to the position of the current induction chip is less than or equal to 20mm, and the current flowing through the alternating-current busbar is 300-1000A.
Another kind of integrated current sensor's power module structure, it includes the radiator, moulds the shell, covers copper ceramic substrate, wafer, apron and exchanges female arranging, cover copper ceramic substrate locates the radiator surface, the wafer is located cover copper ceramic substrate constitutes control circuit, mould the shell and locate the radiator and the cladding cover copper ceramic substrate, exchange female the connection cover copper ceramic substrate and stretch out mould the shell, the apron is located mould the shell top surface, its characterized in that: still include current induction chip, drive control board and metal shielding cover, drive control board locates the apron top surface, current induction chip weld in drive control board to just stretching out female the arranging of interchange of moulding the shell, metal shielding cover parcel female arranging and current induction chip are exchanged to the open end stretches out drive control board, current induction chip detects female current signal who arranges of interchange.
The power module structure of the integrated current sensor adopts the technical scheme that the structure comprises a radiator, a plastic shell, a copper-coated ceramic substrate, a wafer, a cover plate and an alternating current bus, wherein the copper-coated ceramic substrate is arranged on the surface of the radiator, the wafer is arranged on the copper-coated ceramic substrate to form a control circuit, the plastic shell is arranged on the radiator and covers the copper-coated ceramic substrate, the alternating current bus is connected with the copper-coated ceramic substrate and extends out of the plastic shell, the cover plate is arranged on the top surface of the plastic shell, the structure also comprises a current induction chip, a current induction plate and a metal shielding cover, the current induction chip is welded on the current induction plate, the current induction plate is arranged on the plastic shell and just faces the alternating current bus extending out of the plastic shell, the metal shielding cover wraps the alternating current bus and the current induction plate, and the current induction chip detects current signals of the alternating current bus. The structure overcomes the defects of the traditional power module, improves the integration level of the power module and the current sensor, avoids the collected current signal from being interfered or interfering other signals, improves the sampling precision and the sampling reliability of the current, ensures the power density of the power module, and reduces the cost.
Drawings
The invention is described in further detail below with reference to the following figures and embodiments:
FIG. 1 is a schematic diagram of a principle of a current sensor detecting an AC busbar current;
FIG. 2 is a schematic diagram of a conventional power module;
fig. 3 is a schematic view of direction a-a in fig. 2.
FIG. 4 is a schematic diagram of a power module structure of the integrated current sensor of the present invention;
FIG. 5 is a top view of FIG. 4;
FIG. 6 is a view taken along line B-B of FIG. 5;
FIG. 7 is a schematic view of a portion of the unidirectional AC busbar of FIG. 4;
FIG. 8 is a schematic diagram of a power module structure of an integrated current sensor with a driving control board;
FIG. 9 is a schematic diagram of another integrated current sensor power module configuration in accordance with the present invention; (ii) a
FIG. 10 is a top view of FIG. 9;
FIG. 11 is a view taken along line C-C of FIG. 10;
fig. 12 is a schematic diagram illustrating a principle of detecting an ac busbar current by a current sensing chip in the power module structure.
Detailed Description
For example, as shown in fig. 2 to 7, the power module structure of the integrated current sensor of the present invention includes a heat sink 1, a plastic case 2, a copper-clad ceramic substrate 7, a wafer 8, a cover plate 22, and an ac busbar 4, wherein the copper-clad ceramic substrate 7 is disposed on the surface of the heat sink 1, the wafer 8 is disposed on the copper-clad ceramic substrate 7 to form a control circuit, the plastic case 2 is disposed on the heat sink 1 and covers the copper-clad ceramic substrate 7, the ac busbar 4 is connected to the copper-clad ceramic substrate 7 and extends out of the plastic case 2, the cover plate 22 is disposed on the top surface of the plastic case 2, the structure B further includes a current sensing chip 5, a current sensing plate 10, and a metal shielding cover 9, the current sensing chip 5 is welded to the current sensing plate 10, the current sensing plate 10 is disposed on the plastic case 2 and faces the ac busbar 4 extending out of the plastic case 2, and the metal shielding cover 9 covers the ac busbar 4 and the current sensing plate 10, the current sensing chip 5 detects a current signal of the alternating current busbar 4.
As shown in fig. 4 to 8, preferably, the structure further includes a drive control board 3, a drive signal pin 12, and a current signal connector pin 11, the drive control board 3 is disposed on the top surface of the cover plate 22, the drive signal pin 12 is disposed on the drive control board 3 and extends to be connected to the control circuit formed by the wafer 8 on the copper-clad ceramic substrate 7, the current signal connector pin 11 is connected to the current induction board 10 and the drive control board 3, and the heights of the drive signal pin 12 and the current signal connector pin 11 are the same.
Preferably, the current signal connector pin 11 is connected with the driving control board 3 by welding or crimping.
Preferably, the metal shielding case 9 is a C-shaped case, and the open end is lower than the driving control board 3 and higher than the current sensing chip 5.
Preferably, the metal shielding case 9 is a C-shaped case formed by bending a metal flat plate twice, the opening width of the C-shaped case is greater than the width of the ac busbar 4, and the opening end is used for arranging the pin 11 of the current signal connector to extend and connect to the driving control board 3.
Preferably, the plastic case 2 is provided with a buckle 21 at the extension part of the ac busbar 4, and the current induction plate 10 is arranged on the plastic case 2 through the buckle 21 or adhered to the plastic case and is located between the ac busbar 4 and the drive control board 3.
Preferably, the plastic housing 2 is formed by resin injection molding, the alternating current busbar 4 is integrated with the plastic housing 2 by injection molding, and the metal shielding cover 9 is integrated with the plastic housing 2 by injection molding or is fixed on the plastic housing 2 by an adhesive.
Preferably, the magnetic permeability of the metallic shielding can 9 is greater than or equal to 1000.
Preferably, the cross-sectional area of the ac busbar 4 in the metal shielding can 9 is greater than or equal to 5mm, the ac busbar 4 is ultrasonically welded on the copper-clad ceramic substrate 7, the distance between the position where the ac busbar 4 is welded on the copper-clad ceramic substrate 7 and the position of the current sensing chip 5 is less than or equal to 20mm, and the current flowing through the ac busbar 4 is 300-1000A.
As shown in fig. 2 to 3 and 9 to 11, another power module structure of an integrated current sensor includes a heat sink 1, a plastic case 2, a copper-clad ceramic substrate 7, a wafer 8, a cover plate 22 and an ac busbar 4, wherein the copper-clad ceramic substrate 7 is disposed on the surface of the heat sink 1, the wafer 8 is disposed on the copper-clad ceramic substrate 7 to form a control circuit, the plastic case 2 is disposed on the heat sink 1 and covers the copper-clad ceramic substrate 7, the ac busbar 4 is connected to the copper-clad ceramic substrate 7 and extends out of the plastic case 2, the cover plate 22 is disposed on the top surface of the plastic case 2, the structure further includes a current sensing chip 5, a driving control board 3 and a metal shielding cover 9, the driving control board 3 is disposed on the top surface of the cover plate 22, the current sensing chip 5 is welded to the driving control board 3 and is directly opposite to the ac busbar 4 extending out of the plastic case 2, the metal shielding cover 9 wraps the alternating current busbar 4 and the current induction chip 5, the opening end of the metal shielding cover extends out of the driving control board 3, and the current induction chip 5 detects a current signal of the alternating current busbar 4.
The principle of the power module structure for detecting the current of the alternating-current busbar is shown in fig. 12, namely, a current induction chip 5 is directly welded on a drive control board 3 and is opposite to an alternating-current busbar 4, similarly, a current induction plate 10 can be arranged on the alternating-current busbar, the current induction chip 5 is welded on the current induction plate 10, and a current signal output by the current induction plate 10 is transmitted to the drive control board through a pin 11 of a current signal connector; then, a metal shielding cover 9 is adopted to cover the current induction chip 5 and the alternating current busbar 4, and the opening width of the metal shielding cover 9 is W2The distance between the current sensing chip 5 and the alternating current bus bar 4 is h, the distance between the current sensing chip 5 and the opening end of the metal shielding case 9 is h1, and h1 is greater than 0. That is, when the periphery of the ac busbar is surrounded by the metal plate with high magnetic permeability, the magnetic field B passing through the current sensing chip 5 is largely determined by the opening width W of the metal shield case 92。
As can be seen from the formula (2), as long as the current sensing chip 5 is located in the metal shielding case 9, it is not easily affected by the height h of the ac busbar; however, when the opening width W of the metal shield case 9 is set2When the change occurs, the error of the current value will become larger, and in the structure of the power module, the opening width W of the metal shielding cover 9 is set2The current sampling circuit is constant and is not influenced by external factors such as vibration, the current sampling precision and the sampling reliability are effectively improved, and the power density of the power module is ensured. And the metal shielding case is simpler to manufacture, and only a metal flat plate is required to be bent twice to form a C-shaped cover shell and wrap the alternating current busbar and the current induction chip, so that the equipment cost is reduced, and meanwhile, the collected current signal is prevented from being interfered or interfering other signals.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110594472.4A CN113295913A (en) | 2021-05-28 | 2021-05-28 | Power module structure of integrated current sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110594472.4A CN113295913A (en) | 2021-05-28 | 2021-05-28 | Power module structure of integrated current sensor |
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| CN113295913A true CN113295913A (en) | 2021-08-24 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990835A (en) * | 2021-10-12 | 2022-01-28 | 正海集团有限公司 | Power semiconductor module structure based on copper-clad ceramic substrate arrangement |
| DE102022102966A1 (en) | 2022-02-09 | 2023-08-10 | Audi Aktiengesellschaft | Semiconductor module with integrated current sensor |
| DE102023122872B3 (en) | 2023-08-25 | 2025-02-06 | Infineon Technologies Ag | POWER ELECTRONICS SYSTEM COMPRISING A POWER SEMICONDUCTOR MODULE AND A CURRENT SENSOR AND A POWER SEMICONDUCTOR MODULE |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040075683A (en) * | 2003-02-20 | 2004-08-30 | 페어차일드코리아반도체 주식회사 | Power semiconductor mudule package and method for fabricating the same |
| JP2014113053A (en) * | 2014-03-20 | 2014-06-19 | Hitachi Automotive Systems Ltd | Power converter |
| CN105334367A (en) * | 2015-11-13 | 2016-02-17 | 扬州国扬电子有限公司 | Power semiconductor module for integrating magnetic core of current sensor |
| CN206920498U (en) * | 2017-04-01 | 2018-01-23 | 苏州汇川联合动力系统有限公司 | A kind of discrete current sensor |
| CN110267442A (en) * | 2019-05-16 | 2019-09-20 | 南京航空航天大学 | An integrated SiC solid-state power controller |
| CN211127477U (en) * | 2019-12-23 | 2020-07-28 | 上海大郡动力控制技术有限公司 | Three-phase current detection device of permanent magnet synchronous motor |
| CN112652603A (en) * | 2020-12-08 | 2021-04-13 | 上海大郡动力控制技术有限公司 | Power module connecting structure of integrated current sensor |
| CN217443431U (en) * | 2021-05-28 | 2022-09-16 | 正海集团有限公司 | Power module structure of integrated current sensor |
-
2021
- 2021-05-28 CN CN202110594472.4A patent/CN113295913A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040075683A (en) * | 2003-02-20 | 2004-08-30 | 페어차일드코리아반도체 주식회사 | Power semiconductor mudule package and method for fabricating the same |
| JP2014113053A (en) * | 2014-03-20 | 2014-06-19 | Hitachi Automotive Systems Ltd | Power converter |
| CN105334367A (en) * | 2015-11-13 | 2016-02-17 | 扬州国扬电子有限公司 | Power semiconductor module for integrating magnetic core of current sensor |
| CN206920498U (en) * | 2017-04-01 | 2018-01-23 | 苏州汇川联合动力系统有限公司 | A kind of discrete current sensor |
| CN110267442A (en) * | 2019-05-16 | 2019-09-20 | 南京航空航天大学 | An integrated SiC solid-state power controller |
| CN211127477U (en) * | 2019-12-23 | 2020-07-28 | 上海大郡动力控制技术有限公司 | Three-phase current detection device of permanent magnet synchronous motor |
| CN112652603A (en) * | 2020-12-08 | 2021-04-13 | 上海大郡动力控制技术有限公司 | Power module connecting structure of integrated current sensor |
| CN217443431U (en) * | 2021-05-28 | 2022-09-16 | 正海集团有限公司 | Power module structure of integrated current sensor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990835A (en) * | 2021-10-12 | 2022-01-28 | 正海集团有限公司 | Power semiconductor module structure based on copper-clad ceramic substrate arrangement |
| DE102022102966A1 (en) | 2022-02-09 | 2023-08-10 | Audi Aktiengesellschaft | Semiconductor module with integrated current sensor |
| DE102022102966B4 (en) | 2022-02-09 | 2024-09-12 | Audi Aktiengesellschaft | Semiconductor module with integrated current sensor |
| DE102023122872B3 (en) | 2023-08-25 | 2025-02-06 | Infineon Technologies Ag | POWER ELECTRONICS SYSTEM COMPRISING A POWER SEMICONDUCTOR MODULE AND A CURRENT SENSOR AND A POWER SEMICONDUCTOR MODULE |
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