CN112652695B - A kind of LED lighting device and its manufacturing method - Google Patents

Abstract

The invention provides an LED light-emitting device and a manufacturing method thereof, wherein the LED light-emitting device comprises a substrate, an LED chip arranged in a functional area of the substrate, a light-transmitting unit which covers the substrate and covers the LED chip, and an adhesive material layer which connects the substrate and the light-transmitting unit, wherein the adhesive material layer comprises a first adhesive layer positioned above a non-functional area on a first surface of the substrate, and a second adhesive layer positioned on a side wall of the light-transmitting unit, or also comprises a third adhesive layer positioned on at least part of the side wall of the substrate, or also comprises a fourth adhesive layer formed on part of the upper surface of the light-transmitting unit. The bonding material layer forms a continuous structure similar to an L shape or a T shape in the LED light-emitting device, and the bonding force between the substrate and the light-transmitting unit can be enhanced; the bonding material layer fully fills the gap between the substrate and the light transmission unit and is also formed on the side walls of the light transmission unit and the substrate, so that the sealing property between the substrate and the light transmission unit is effectively improved, and the air tightness and the reliability of the product are enhanced.

Description

A kind of LED lighting device and its manufacturing method

technical field

The present invention relates to the field of semiconductor devices, in particular to an LED lighting device and a manufacturing method thereof.

Background technique

LED chips have been developed rapidly because of their excellent performance. Among them, the huge application value of ultraviolet LEDs, especially deep ultraviolet LEDs, especially in the application of sterilization and disinfection, has aroused people's high attention and has become a new research hotspot.

As the demand for deep ultraviolet LEDs is increasing, the structure of deep ultraviolet LEDs is also becoming more and more diverse. At present, the packaging form of substrate plus quartz glass is usually used. The quartz glass is bonded to the substrate through an adhesive, and then such a packaging form faces many problems. For example, due to the different materials of the substrate and quartz glass, the adhesiveness of the adhesive is usually poor, and the airtightness of the product cannot be guaranteed; It is easy to cause lack of adhesive around the product, and the adhesive cannot fully fill the gap between the substrate and the quartz glass, resulting in airtightness of the product; the amount of adhesive used is too large, or the adhesive enters the functional area of the product, affecting the LED The luminous effect; because the quartz glass material itself is relatively hard and brittle, it is easy to cause glass chipping and damage during production operations, which will also lead to a decrease in the airtightness and reliability of the product.

Based on the many problems faced by LED packaging, especially UV LED packaging, there is an urgent need for a solution that can solve the light output rate of the light emitting device and improve the reliability of the light emitting device.

Contents of the invention

In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an LED light emitting device and a manufacturing method thereof. In the light emitting device of the present invention, an adhesive layer is formed between the substrate and the quartz glass. The adhesive layer It includes a first adhesive layer located on the substrate outside the functional area on the first surface of the substrate, and a second adhesive layer located on the sidewall of the light-transmitting unit, and the above-mentioned adhesive layer forms a similar " L"-shaped continuous structure; or the above-mentioned bonding layer may further include a third bonding layer formed on a part of the side wall of the substrate, and at this time, the above-mentioned bonding layer forms a similar "T"-shaped continuous structure. The bonding material layer fully fills the gap between the substrate and the quartz glass, which can improve the airtightness of the product and protect the quartz glass from damage or breakage.

In order to achieve the above purpose and other related purposes, the present invention provides an LED lighting device, comprising:

a substrate, the substrate has a first surface and a second surface oppositely arranged, and a functional area is formed on the first surface of the substrate;

an LED chip, the LED chip is fixed on the functional area of the first surface of the substrate;

a light-transmitting unit, the light-transmitting unit is disposed above the first surface of the substrate and covers the LED chip;

an adhesive material layer, connecting the substrate and the light-transmitting unit, the adhesive material layer comprising: a first adhesive layer located above the substrate outside the functional area on the first surface of the substrate, and the second adhesive layer on the side wall of the light-transmitting unit.

Optionally, the adhesive material layer further includes a third adhesive layer formed on at least part of the sidewall of the substrate.

Optionally, the substrate is a planar substrate, the first surface of the substrate is provided with a metal coating higher than the first surface, and the metal coating is formed on the functional area and the outside of the functional area. On the substrate, and the metal plating layer forms a metal strip surrounding the functional area on the substrate outside the functional area, and the metal strip is spaced apart from the functional area.

Optionally, the substrate is a bracket with a bowl, the functional area is formed inside the bowl, and the LED chip is located in the bowl.

Optionally, the substrate forms a step in the peripheral area outside the functional area, and the third adhesive layer is formed on the surface and sidewall of the step.

Optionally, in the light emitting direction of the LED chip, the thickness of the first adhesive layer is between 35 μm and 150 μm.

Optionally, in the light emitting direction of the LED chip, the thickness of the second bonding layer is between 200 μm and 400 μm.

Optionally, the first adhesive layer includes a first part located above the metal strip outside the functional area, and a second part located on the substrate outside the metal strip.

Optionally, in the light emitting direction of the LED chip, the thickness of the first part of the first adhesive layer is between 35 μm and 50 μm, and the thickness of the second part is between 50 μm and 150 μm.

Optionally, when the substrate is a planar substrate, in the light emitting direction of the LED chip, the thickness of the third bonding layer is greater than or equal to 1/3 of the thickness of the substrate, and less than or equal to the thickness of the substrate .

Optionally, when the substrate is a bracket with a cup, in the light emitting direction of the LED chip, the thickness of the third adhesive layer is greater than or equal to 1/2 of the thickness at the side wall of the bracket , less than or equal to the thickness at the side wall of the bracket.

Optionally, the light-transmitting unit is a flat plate structure, the flat structure includes a mounting seat located on the periphery and a light-transmitting area located in the middle, and the light-transmitting unit is connected to the side wall of the bracket through the mounting seat .

Optionally, a step is formed on the side wall of the cup holder near the functional area, the first adhesive layer is formed on the surface of the step, and the second adhesive layer is formed on the surface of the step. The side wall of the step and at least part of the upper surface of the side wall.

Optionally, along the light emitting direction of the LED chip, the thickness of the second adhesive layer is greater than 1/2 of the thickness of the light-transmitting unit, and less than or equal to the thickness of the light-transmitting unit.

Optionally, the light transmission unit is a lens structure, and the lens structure includes a convex lens and a mount formed around the convex lens, wherein,

A cavity is formed between the mounting seat and the convex lens, and the quartz glass plate is connected to the substrate through the mounting seat;

The LED chip is located in the cavity.

Optionally, the convex lens is a hemispherical convex lens, and the center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.

Optionally, the convex lens is a semi-ellipsoidal convex lens in the long axis direction, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.

Optionally, the vertical distance between the highest point of the lens structure and the lowest surface is between 3.00-3.50 mm, the height of the mount of the lens structure is between 0.30-0.70 mm, and the maximum width of the convex lens is between 2.00～3.50mm.

Optionally, the light-transmitting unit is quartz glass.

Optionally, the adhesive material layer further includes a fourth adhesive layer, and the fourth adhesive layer covers part of the upper surface of the light-transmitting unit.

The present invention also provides a method for manufacturing an LED lighting device, comprising the following steps:

A substrate is provided, the substrate has a first surface and a second surface oppositely arranged, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;

providing an LED chip, and fixing the LED chip on the functional area of the first surface of the substrate;

A light-transmitting plate is covered on the substrate, and the light-transmitting plate is connected to the substrate through a first adhesive layer on the substrate outside the functional area, and the light-transmitting plate covers the LED chip;

forming a first trench over the cutting area;

forming a second adhesive layer in the first groove, the second adhesive layer forming a continuous structure with the first adhesive layer;

Carrying out the second cutting, aligning the cutting area of the substrate along the second adhesive layer to cut the light-transmitting plate and the substrate until the substrate is cut through, so as to form the light emitting device.

Optionally, the depth of the groove is greater than or equal to 35 μm.

Optionally, the substrate is a planar substrate or a bracket with a bowl, wherein,

When the substrate is a planar substrate, the first surface of the substrate is provided with a metal coating higher than the first surface, and the metal coating forms the functional area and part of the substrate outside the functional area. metal strips, the metal strips surround the functional area and are spaced apart from the functional area, grooves are formed between adjacent metal strips;

When the substrate is a bracket with a bowl, the functional area is formed inside the bowl, and the LED chip is located in the bowl.

Optionally, covering the transparent plate on the substrate further includes the following steps:

Provide quartz glass including a plurality of light-transmitting units, each light-transmitting unit includes a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;

forming a first adhesive layer on the substrate outside the functional area;

The quartz glass is attached to the substrate, the mounting seat of each light-transmitting unit is connected to the substrate through the first bonding layer, and the light-transmitting area of each light-transmitting unit of the quartz glass is connected to the substrate. The above LED chips correspond one by one.

Optionally, covering the transparent plate on the substrate further includes the following steps:

Provide a plurality of independent light-transmitting units formed of quartz glass, each light-transmitting unit includes a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;

forming a first adhesive layer on the substrate outside the functional area;

bonding a plurality of light-transmitting units to the substrate, the mounting seat of each light-transmitting unit is connected to the substrate through the first bonding layer, and the light-transmitting area of each light-transmitting unit is connected to the LED chip In one correspondence, the mounting seats of the adjacent light-transmitting units form the first groove.

Optionally, when the substrate is a planar substrate, the light-transmitting unit is formed as a lens structure, wherein the light-transmitting area is a convex lens; when the substrate is a bracket with a cup, the light-transmitting unit forms It is a lens structure or a plate structure, and when the light transmission unit is a lens structure, the light transmission area is a convex lens.

Optionally, when the substrate is a planar substrate, the first adhesive layer includes a first part formed on the metal strip and a second part formed in the groove, the first part The thickness is between 35 μm and 50 μm, and the thickness of the second part is between 50 μm and 150 μm.

Optionally, forming the first groove above the cutting area includes: performing a first cutting, cutting through the quartz glass to separate adjacent light-transmitting units, and forming the first groove.

Optionally, performing the first cutting further includes: after separating adjacent light-transmitting units, continuing to cut at least part of the substrate to form a second groove in the substrate.

Optionally, after forming the first groove, the method further includes performing a first cutting, cutting at least part of the substrate to form a second groove in the substrate.

Optionally, the manufacturing method further includes forming a third adhesive layer in the second groove.

Optionally, in a direction perpendicular to the light emitting direction of the LED chip, the cutting width of the second cutting is smaller than the cutting width of the first cutting.

Optionally, when the substrate is a planar substrate, along the light emitting direction of the LED chip, the thickness of the third adhesive layer is greater than or equal to 1/3 of the thickness of the substrate and less than or equal to the thickness of the substrate.

Optionally, when the substrate is a bracket with a cup, along the light emitting direction of the LED chip, the thickness of the third bonding layer is greater than or equal to 1/2 of the thickness at the side wall of the bracket, Less than or equal to the thickness at the side wall of the bracket.

Optionally, when the substrate is a bracket with a bowl, it also includes:

A step is formed on the side wall of the bracket close to the functional area;

forming the first adhesive layer on the surface of the step;

The second adhesive layer is formed on the sidewall of the step and at least part of the upper surface of the sidewall.

Optionally, a fourth adhesive layer is formed on part of the upper surface of the light transmission unit, and the fourth adhesive layer forms a continuous structure with the second adhesive layer.

As mentioned above, the LED lighting device and its manufacturing method provided by the present invention have at least the following beneficial technical effects:

The LED light-emitting device of the present invention includes: a substrate, an LED chip arranged in a functional area of the substrate, a light-transmitting unit covering the substrate and covering the LED chip, and an adhesive material layer connecting the substrate and the light-transmitting unit. In the light emitting direction of the LED chip, the side wall of the LED light emitting device of the present invention is flush on the whole, which is conducive to a better positioning of the product in the braided vibrating plate, and better improves the packaging yield. The first part of the adhesive layer is uniformly and completely filled between the metal strip and the lens unit without air bubbles or gaps, which can significantly increase the airtightness of the device. In addition, the second part formed on at least part of the substrate outside the metal strip can further prevent water vapor from entering the device, especially when the second part fills the gap between the substrate outside the metal strip and the light-transmitting unit, it can Further improve the airtightness of the device.

In another embodiment of the present invention, in the LED light-emitting device, the bonding material layer between the substrate and the light-transmitting unit includes: a second layer above the substrate located outside the functional area on the first surface of the substrate An adhesive layer, and a second adhesive layer located on the side wall of the light-transmitting unit, the adhesive material layer forms a continuous structure in the LED lighting device. The above-mentioned bonding material forms an "L"-shaped structure as a whole, and the bonding material of this structure can fully bond the substrate and the light-transmitting unit, enhance the bonding force between the two, and improve the reliability of the product. At the same time, the adhesive material layer fully fills the gap between the substrate and the light-transmitting unit, and is also formed on the side wall of the light-transmitting unit, effectively improving the sealing between the substrate and the light-transmitting unit, and improving the airtightness of the product and reliability.

In addition, the above adhesive material layer in the light-emitting device of the present invention may also include a third adhesive layer formed on at least part of the side wall of the substrate, for example, steps are formed on the side wall of the substrate, and the third adhesive layer forms on the surface and side walls of the step. The adhesive material layer including the third adhesive layer forms a continuous structure similar to a "T" or "Z". The structure forms a cladding structure between and around the substrate and the light-transmitting unit, which can further improve the airtightness and reliability of the product.

Further, the above-mentioned bonding material layer may also include a fourth bonding layer formed on part of the upper surface of the light-transmitting unit, specifically, the fourth bonding layer is formed on at least part of the upper surface of the mounting seat of the light-transmitting unit , thereby further increasing the bonding area of the bonding material, increasing the bonding force between the light-transmitting unit and the substrate, and further enhancing the airtightness and reliability of the product.

The above-mentioned adhesive material layer preferably has one or more of the following characteristics: good adhesion, certain fluidity, and certain reflective effect on the light emitted by the LED chip. Silica gel, white glue, fluororesin, etc. can be selected. In this way, while improving the airtightness of the product, the light emitting effect of the product can also be improved.

The manufacturing method of the light-emitting device of the present invention may adopt the method of covering the whole substrate with a whole piece of quartz glass plate containing a plurality of light-transmitting units, or adopt a plurality of independent light-transmitting units formed of quartz glass to be bonded to the whole piece. way on the substrate. First, the entire quartz glass plate or the independent light-transmitting unit and the substrate are positioned through the corresponding positioning parts on each fixture to ensure that the light-transmitting area of the light-transmitting unit coincides with the center of the LED chip on the substrate. This process It can effectively improve the deviation of the quartz glass plate or the light-transmitting unit, and avoid the deviation of the central light-emitting angle of the LED chip; the mounting seat of the light-transmitting unit is aligned with the substrate outside the functional area coated with the first bonding layer on the substrate, The quartz glass is brought into contact with the first adhesive layer on the substrate and pressed in a lamination device with vacuum to realize the close bonding of the two. Further, a first groove can be formed between the light-transmitting units, and an adhesive material can be filled in the first groove so that it fills the first groove to form a second adhesive layer. The adhesive layer is cut to obtain a light-emitting device, thereby forming a light-emitting device including an "L"-like structure of the adhesive material layer. The method can ensure the airtightness and reliability of the light emitting device, and the whole process can effectively improve the deviation of the quartz glass. In the above manufacturing method, while forming the first groove, part of the substrate is cut along the first groove, a second groove is formed on the first substrate, and the third bonding layer is formed in the second groove. In this way, the above-mentioned "T"-shaped adhesive material layer is formed, which further improves the airtightness and reliability of the device.

In the present invention, the above-mentioned substrate may be a flat substrate or a bracket substrate with a cup, and the light-transmitting unit may be a lens structure or a flat plate structure. The manufacturing method of the light-emitting device of the present invention has various modes and strong applicability, can manufacture various forms of light-emitting devices, and can ensure good airtightness and reliability of the device at the same time.

Description of drawings

FIG. 1 a shows a schematic diagram of an LED lighting device provided by Embodiment 1 of the present invention.

Fig. 1b is a flow chart of the manufacturing method of the LED lighting device shown in Fig. 1a.

Fig. 1c is a schematic diagram showing the structure of the substrate provided in the method shown in Fig. 1b.

FIG. 1d is a schematic top view of the substrate shown in FIG. 1c.

Fig. 1e is a schematic diagram showing the structure of coating the bonding material on the substrate shown in Fig. 1d.

FIG. 1f is a schematic structural diagram of placing the substrate shown in FIG. 1e in the first jig.

Fig. 1g is a schematic diagram of placing the quartz glass in the second jig.

FIG. 1h is a schematic diagram of placing the second jig on the first jig.

Figure 1i shows a schematic diagram of bonding quartz glass to a substrate.

Figure 1j shows a schematic view of the structure where the bonding material is formed onto the metal strip.

Figure 1k shows a schematic diagram of the structure after covering the substrate with quartz glass.

Fig. 2a shows a schematic diagram of an LED light emitting device provided by Embodiment 2 of the present invention.

Fig. 2b is a schematic diagram of an LED lighting device provided for an alternative embodiment of Embodiment 2 of the present invention.

Fig. 2c shows a schematic diagram of an LED lighting device provided for an alternative embodiment of Embodiment 2 of the present invention.

Fig. 3 is a schematic diagram of the light emitting angle of the LED lighting device shown in Fig. 2a and Fig. 2b.

Fig. 4a shows a schematic diagram of an LED lighting device provided as an alternative embodiment of Embodiments 1 and 2.

Fig. 4b is a schematic diagram of the light emitting angle of the LED lighting device shown in Fig. 4a.

FIG. 5 is a schematic flowchart of a method for manufacturing an LED lighting device provided by Embodiment 2 of the present invention.

Fig. 6a is a schematic structural diagram after providing the substrate and fixing the LED chips on the substrate as described in Fig. 5 .

Fig. 6b and Fig. 6c are schematic diagrams showing different arrangements of LED chips on the substrate.

Fig. 7a is a schematic diagram showing the structure of forming a first adhesive layer on the substrate shown in Fig. 6a.

Fig. 7b is a schematic structural diagram of forming a first adhesive layer on the substrate shown in Fig. 6a in another alternative embodiment.

FIG. 8a is a schematic structural diagram of placing the substrate shown in FIG. 7a in the first jig.

Fig. 8b is a schematic diagram of placing the quartz glass in the second jig.

FIG. 8c is a schematic diagram of placing the second jig on the first jig.

Fig. 8d shows a schematic diagram of bonding quartz glass to a substrate.

Figure 8e shows a schematic diagram of the structure after covering the substrate with quartz glass.

Fig. 9 is a schematic structural diagram of forming a first groove between adjacent light-transmitting units of the quartz glass shown in Fig. 8e.

FIG. 10 is a schematic structural diagram of forming a second bonding layer in the first groove shown in FIG. 9 .

Fig. 11a is a schematic structural diagram of forming the first trench in another alternative embodiment of the second embodiment.

FIG. 11b is a schematic structural diagram of a first jig for fixing the substrate shown in FIG. 11a.

Fig. 11c is a schematic structural diagram of a second jig for fixing the plurality of light-transmitting units shown in Fig. 11a.

Fig. 12a shows a schematic structural view of the LED light emitting device provided by Embodiment 3 of the present invention.

Fig. 12b is a schematic structural diagram of an LED lighting device in an alternative embodiment of the third embodiment.

Fig. 12c is a schematic structural diagram of an LED lighting device in another alternative embodiment of the third embodiment.

FIG. 13 is a schematic diagram showing the structure of the second groove formed in the manufacturing method of the LED lighting device provided by the third embodiment.

FIG. 14 is a schematic diagram showing the structure of forming the second and third bonding layers in the structure shown in FIG. 13 .

FIG. 15 is a schematic structural diagram of forming a second trench in another alternative embodiment of the third embodiment.

Fig. 16a shows a schematic structural view of the LED lighting device provided by Embodiment 4 of the present invention.

Fig. 16b shows a schematic structural view of the LED lighting device provided by Embodiment 5 of the present invention.

Fig. 17a shows a schematic structural view of the LED lighting device provided by Embodiment 6 of the present invention.

Fig. 17b shows a schematic structural view of the LED lighting device provided by Embodiment 7 of the present invention.

Fig. 18a is a schematic structural diagram of an LED lighting device provided by Embodiment 8 of the present invention.

Fig. 18b shows a schematic structural diagram of an LED lighting device provided for an alternative embodiment of the eighth embodiment of the present invention.

FIG. 19 is a schematic diagram showing the structure of the substrate provided in the manufacturing method of the LED lighting device of the eighth embodiment and the LED chips fixed on the substrate.

FIG. 20 is a schematic structural diagram of forming a first bonding layer on the substrate shown in FIG. 19 .

FIG. 21 is a schematic view showing the structure of the substrate shown in FIG. 20 covered with quartz glass.

FIG. 22 is a schematic structural diagram of forming a first trench in the structure shown in FIG. 21 .

FIG. 23 is a schematic diagram showing the structure of forming a second bonding layer in the structure shown in FIG. 22 .

FIG. 24 is a schematic structural diagram of forming the first trench in an alternative embodiment of the eighth embodiment.

Fig. 25a shows a schematic structural diagram of an LED lighting device provided by Embodiment 9 of the present invention.

Fig. 25b shows a schematic structural diagram of an LED lighting device provided for an alternative embodiment of the ninth embodiment.

FIG. 26 is a schematic view showing the structure of the second groove formed in the manufacturing method of the LED lighting device according to the ninth embodiment.

FIG. 27 is a schematic diagram showing the structure of forming the second and third adhesive layers in the structure shown in FIG. 26 .

FIG. 28 is a schematic structural diagram of forming a second trench in an alternative embodiment of the ninth embodiment.

Fig. 29 is a comparison diagram of He gas leakage of the LED lighting devices shown in Fig. 1a, Fig. 2b and Fig. 12a.

FIG. 30 shows a schematic structural view of the LED lighting device provided by Embodiment 10 of the present invention.

FIG. 31 shows a schematic structural diagram of an LED lighting device provided by Embodiment 11 of the present invention.

Fig. 32 is a schematic structural diagram of an LED lighting device provided by Embodiment 12 of the present invention.

FIG. 33 shows a schematic structural view of an LED lighting device provided by Embodiment 13 of the present invention.

List of reference signs

100-1 LED lighting device 200-1, 200-1′ LED lighting device

101 Substrate 200-2, 200-2′ LED lighting device

1011 functional area 200-3 LED lighting device

1012 Non-functional area 200-4, 200-4′ LED lighting device

1012-1 Metal strip 201 Substrate

1013 electrode pad 2011 functional area

1014 Second trench 2012 Non-functional area

1015 First jig 2013 Electrode pad

1016 Retention spring 2014 Second groove

1017 Steps on the sidewall of the substrate 2018' Peripheral area of the non-functional area

1018′ Peripheral area of the non-functional area 2018 cutting area

1018 cutting area 2015 first fixture

102 Translucent unit 2016 Positioning spring

1020 Quartz glass 2017 Steps on the side walls of the substrate

1021 Mounting seat 202 Light transmission unit

1022 Translucent zone 2020 Quartz glass

1023 First groove 2021 Mounting seat

1024 Second Fixture 2022 Translucent Area

1025 Positioning hole 2023 First groove

103 LED chip 2024 Second jig

104 cavity formed by lens structure 2025 positioning hole

1051 First bonding layer 203 LED chip

1052 Second bonding layer 204 Cavity formed by lens structure

1053 Third bonding layer 2051 First bonding layer

1054 fourth bonding layer 2052 second bonding layer

106 Groove 2053 Third bonding layer

100-2, 100-2′, 100-2″ LED light emitting device 2054 fourth bonding layer

100-3 LED lighting device 206 Groove

100-4 LED lighting device 207 steps

200-5 LED lighting device 200-7 LED lighting device

200-6 LED lighting device 200-8 LED lighting device

detailed description

Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the shape, quantity, positional relationship and proportion of each component in actual implementation can be changed at will under the premise of realizing the technical solution of the party, and the layout of the components may also be more complicated.

Embodiment one

This embodiment provides an LED lighting device. As shown in FIG. 1a, the LED lighting device 100-1 of this embodiment includes a substrate 101, an LED chip 103 disposed on the substrate, and a light-transmitting unit that covers the LED chip and is connected to the substrate. 102 , connecting the substrate 101 and the bonding material layer of the light transmission unit 102 .

In this embodiment, the substrate 101 may be any suitable substrate such as a ceramic substrate or a printed circuit board. In this embodiment, a planar ceramic substrate is taken as an example for illustration. The substrate 101 includes a first surface and a second surface that are oppositely disposed. As shown in FIG. The functional area 1011 is formed as a die-bonding area for fixing the LED chip, and the LED chip 103 is disposed in the functional area 1011 , for example, can be connected to the functional area by gold wire or directly welded. In an optional embodiment, the above-mentioned functional area is formed by a metal plating layer formed on the first surface of the substrate 101. The metal plating layer forms a positive and negative electrode area respectively connected to the electrodes of the LED chip in the functional area, and the electrode pad 1013 will be arranged on the The electrodes of the LED chips in the functional area are led out. The light transmission unit 102 includes a mounting base 1021 and a light transmission area 1022 , a cavity 104 is formed between the mounting base and the light transmission area, and the LED chip 103 is located in the cavity 104 . The light-transmitting unit is connected to the substrate 101 through the first adhesive layer 1051 located above the outer area of the functional area. In the present invention, for the convenience of description, the outer area of the above-mentioned non-functional area is defined as the non-functional area 1012, and this definition is only used for explaining the present invention, and should not be construed as a limitation of the present invention.

The LED chip 103 can be any type of LED chip, for example, it can be an ultraviolet or deep ultraviolet LED chip with a wavelength of less than 400nm, especially an ultraviolet or deep ultraviolet LED chip with a wavelength between 220nm and 385nm. Take the ultraviolet LED chip among them as an example. The thickness of the ultraviolet LED chip is between 200 μm˜750 μm, preferably about 250˜500 μm, such as 450 μm. Although not shown in detail, it can be understood that the LED chip 103 can include a substrate, a semiconductor layer formed on the surface of the substrate, and the semiconductor layer includes a first semiconductor layer, an active layer and an active layer that can be sequentially formed on the surface of the substrate. The second semiconductor layer, the LED chip 103 also includes an electrode structure connected to the first and second semiconductor layers respectively, the electrode structure of the LED chip 103 is connected to the functional area 1011 of the substrate, for example, it can be connected by welding, eutectic, etc. Fixing of the LED chip 103 is thus achieved. The electrode structure of the LED chip is drawn out through the electrode pads 1013 on the back of the substrate.

In the ultraviolet LED chip, the above-mentioned substrate can be a sapphire substrate, the first semiconductor layer can be an N-type AlGaN layer, and an AlN buffer layer and an AlN/AlGaN superconductor layer can also be formed between the N-type AlGaN layer and the sapphire substrate. The lattice layer is used to reduce the lattice mismatch rate between the N-type AlGaN layer and the sapphire substrate. The active layer is an AlGaN multi-quantum well layer, and the AlGaN multi-quantum well layer is arranged on the side of the N-type AlGaN layer away from the substrate; the second semiconductor layer is a P-type AlGaN layer, and the P-type The AlGaN layer is disposed on the side of the AlGaN quantum well layer away from the substrate.

Also referring to Fig. 1a, the light-transmitting unit 102 includes a mounting seat 1021 and a light-transmitting area 1022. In this embodiment, the light-transmitting unit 102 is a lens structure formed of quartz glass, and the light-transmitting area forms a convex lens, and the mounting seat is located below the convex lens. . The mount is connected to the non-functional area 1012 of the substrate, and the light-transmitting area is located above the LED. A cavity 104 is formed between the mounting seat and the light-transmitting area, and the LED chip 103 is located in the cavity 104, and the depth of the cavity is about 100-900 μm. It can be understood that, although not shown in this embodiment, structures such as a reflective layer, encapsulation glue, or encapsulation glue containing phosphor powder may also be formed in the cavity 104 . In order to improve the light extraction effect of the LED lighting device, preferably, the centerline of the LED chip coincides with the centerline of the light-transmitting area (convex lens) 1022 .

Also referring to FIG. 1a, the non-functional area 1012 of the substrate 101 is also formed with a metal coating, and the metal coating of the non-functional area is formed as a metal strip 1012-1 surrounding the functional area, and the metal strip 1012-1 is spaced apart from the functional area. . The metal coatings of the metal strips forming the functional area and the non-functional area can be the same metal material or different metal materials. When the same metal material is used, the metal plating of the functional area and the non-functional area can be formed at the same time. The thickness of the metal coating is between 30-100 μm, preferably about 50 μm. Since the metal plating has the aforementioned thickness, the substrate 101 forms grooves 106 between adjacent metal strips (see also FIG. 1 c ). As shown in FIG. 1a, the first bonding layer 1051 includes a first part 1051-1 located above the metal strip in the non-functional area and a second part 1051-2 located on at least part of the substrate outside the metal strip 1012-1. Fig. 1a shows that in the LED lighting device, the second part 1051-2 of the adhesive layer is formed on a part of the substrate outside the metal strip 1012-1. It can be understood that the second part 1051-2 can be formed on the metal strip on all the substrates outside the strip 1012-1, and fill the gap between the mounting seat of the light-transmitting unit and the substrate outside the metal strip.

Due to the existence of the above metal strips, when the light-transmitting unit is adhered to the substrate through an adhesive material, the distance between the light-transmitting unit and the substrate is increased, and the distance between the inner wall of the inner cavity 104 of the light-transmitting unit and the LED is increased accordingly. The distance between the tops of the chips can ensure that the LED chips will not be squeezed by the light-transmitting unit and protect the LED chips from damage. In addition, the distance between the top of the LED chip and the inner wall of the light-transmitting unit cavity 104 can be adjusted by adjusting the height of the metal strip, so that the distance is less than 100 μm, preferably, the distance is greater than 10 μm, thereby ensuring Under the premise that the LED chip is not squeezed, the light emitting effect of the LED chip is guaranteed.

This embodiment is described by taking the formation of metal strips as an example. It can be understood that any material that can increase the distance between the light-transmitting unit and the substrate without affecting the photoelectric performance of the LED chip can be used to form the strip structure. For example, it may be a stripe structure formed by depositing insulating materials such as silicon oxide and aluminum oxide.

In the light emitting direction of the LED lighting device, that is, in the direction indicated by the arrow O in FIG. 1 a , the thickness of the first adhesive layer 1051 is between 35 μm and 150 μm. Wherein, the thickness of the first part 1051-1 is between 35 μm and 50 μm, and the thickness of the second part 1051-2 is between 50 μm and 150 μm.

The above-mentioned first adhesive layer 1051, for example, can be selected from silica gel, white glue, fluororesin, etc., and preferably has one or more of the following characteristics: good adhesion, certain fluidity, and certain reflection on the light emitted by the LED chip Functional materials, so that while improving the airtightness of the product, it can also increase the service life of the product.

Still referring to FIG. 1 a , in this embodiment, the above-mentioned light-transmitting unit 102 forms a lens structure, wherein the convex lens in the light-transmitting area 1022 is formed as a hemispherical convex lens. The ball diameter of the hemispherical convex lens is between 2.00mm-3.50mm, preferably 3.20mm, and the height of the entire light-transmitting unit is between 1.50mm-2.30mm, preferably 2.10mm. Under the action of the convex lens, as shown in FIG. 3 , the light emitting angle of the LED light emitting device is about 60°. The light emitting angle of the LED lighting device can also be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light-transmitting area. For example, when there is no filling material around the LED chip, that is, when the cavity 104 is air or nitrogen, the light emitting angle of the LED light-emitting device is between 55° and 80°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic When reflective materials such as glue are used, the light emission angle of the LED light emitting device 100-2 is between 80° and 120°.

Referring to FIG. 4a, in another optional embodiment of this embodiment, the light-transmitting unit is also formed as a lens structure, including a mount 1021 and a light-transmitting area 1022. The difference is that the light-transmitting area is formed as a semi-ellipsoid, And it is a semi-ellipsoid in the long axis direction. The height H1 of the light-transmitting unit with the semi-ellipsoidal light-transmitting area (that is, the vertical distance between the highest point of the lens structure and the lowest surface) is about 3.00-3.50 mm, and the height H2 of the mounting seat is between 0.30-0.70 mm , the maximum width W of the convex lens is between 2.00mm and 3.50mm. As shown in FIG. 4 b , the light emitting angle of the light emitting device having the light-transmitting unit of the semi-ellipsoid light-transmitting region is about 35°. Likewise, the light output angle of the light emitting device with the semi-ellipsoidal light transmission unit can be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light transmission area. For example, when there is no filling material around the LED chip, that is, when the cavity 104 is air or nitrogen, the light emitting angle of the light emitting device is about 25°-55°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic glue, etc. When the reflective material is used, the light emitting angle of the light emitting device is between 55° and 75°.

In practical applications, any light-transmitting unit can be selected according to the requirements of the light-emitting angle. In this embodiment, the above-mentioned light-transmitting unit is a quartz glass lens, and may also be a plastic lens or the like.

As shown in Figure 1a, the side wall of the substrate of the light emitting device 100-1 of this embodiment is flush with the side wall of the lens, which is conducive to better positioning of the product in the braided vibrating plate and better packaging yield. The first part 1051 - 1 of the first adhesive layer 1051 is uniformly and completely filled between the metal strip and the lens unit without air bubbles or gaps, which can significantly increase the airtightness of the device. In addition, the second part 1051-2 formed on at least part of the substrate outside the metal strip can further prevent water vapor from entering the device, especially when the second part fills the gap between the substrate outside the metal strip and the light-transmitting unit , the airtightness of the device can be further improved.

This embodiment also provides a method for manufacturing a light-emitting device, as shown in FIG. 1b, the method includes the following steps:

S101: Provide a substrate, the substrate has a first surface and a second surface oppositely arranged, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;

S102: Provide an LED chip, and fix the LED chip on the functional area of the first surface of the substrate;

Referring to Fig. 1c and Fig. 1d, firstly, a substrate 101 is provided, which may be any suitable substrate such as a ceramic substrate, a printed circuit board, or the like. In this embodiment, a planar ceramic substrate is taken as an example for illustration. The substrate 101 includes a first surface and a second surface opposite to each other. A functional area 1011 is formed on the first surface, and an electrode pad 1013 connected to the functional area 1011 is provided on the second surface (refer to FIG. 1 a ). The functional area 1011 is formed as a die-bonding area for fixing LED chips, and a cutting area 1018 is formed between adjacent functional areas. In this embodiment, the area outside the functional area 1011 is defined as the non-functional area 1012 .

In an optional embodiment of this embodiment, a metal strip 1012-1 surrounding the functional area is formed on the substrate outside the functional area, and the metal strip is spaced apart from the functional area. As shown in Figure 1c and Figure 1d, the non-functional area 1012 is also formed with a metal coating, specifically, the metal coating of the non-functional area is formed in the area outside the cutting area, and the metal coating is formed in the non-functional area to surround the functional area. Metal strip 1012-1, the metal strip and the functional area are spaced apart from each other. The above-mentioned metal strips in the functional area and the non-functional area can be formed by forming a metal plating layer on the first surface of the substrate 101 . For example, the above-mentioned metal plating layer can be formed on the first surface of the substrate 101 by etching, deposition and other processes. The thickness of the metal coating is between 30 μm˜100 μm, preferably about 50 μm. Since the metal coating has the above thickness, as shown in FIG. 1 c , the substrate 101 forms a groove 106 in the cutting area 1018 .

After forming the metal strips in the above-mentioned functional area and non-functional area on the substrate 101, an LED chip 103 is provided. The LED chip can be any type of LED chip, for example, the wavelength can be less than 400nm, especially the wavelength is between 220nm～ Ultraviolet or deep ultraviolet LED chips between 385nm and ultraviolet LED chips with wavelengths between 220nm and 385nm are taken as an example in this embodiment. The LED chip 103 is fixed on the functional area 1011 of the substrate 101 . For example, the LED chip can be fixed by various processes such as wire bonding, bonding, and welding. As shown in FIG. 1d , this embodiment takes a flip-chip LED as an example, and the LED chip is bonded to the functional area 1011 . The electrode structure of the LED chip is led out through the electrode pads 1013 on the second surface of the substrate that communicate with the functional area 1011 .

The LED chips are fixed on the substrate and can be arranged in different ways. Referring to Fig. 6b and Fig. 6c, the LED chip and the substrate shown in Fig. 6b can be arranged side by side, the side of the LED chip is parallel to the side of the substrate, and the two are basically parallel to each other. It is also possible to arrange the LED chip and the substrate in the form of corner-to-edge as shown in FIG. 6 c , and the four corners of the LED chip are respectively opposite to the four side walls of the substrate. Especially when the size of the LED chips is relatively large, the arrangement shown in FIG. 6c can make full use of the substrate space and improve the utilization rate of the substrate. In practical applications, the arrangement of LEDs can be flexibly selected according to the size of the LED chip and the size of the substrate.

S103: Cover the substrate with a light-transmitting plate, connect the light-transmitting plate to the substrate through an adhesive material layer on the substrate outside the functional area, and cover the LED chip with the light-transmitting plate.

After the LED chip 103 is fixed on the substrate 101 , the substrate is covered with a light-transmitting plate to realize the packaging of the LED chip. In this embodiment, the above-mentioned light-transmitting plate is exemplified by quartz glass. As shown in FIG. 1 e , firstly, the groove 106 between the metal strips in the non-functional area is filled with bonding material. Preferably, the thickness of the bonding material filled in the groove 106 is greater than the thickness of the metal plating forming the functional area and the non-functional area. In a preferred embodiment, the bonding material is about 50 μm to 200 μm above the metal plating. The bonding material can be bonding materials such as silica gel, white glue or fluororesin. Quartz glass is then covered on the substrate. In this embodiment, the quartz glass is a whole piece of quartz glass with a plurality of light-transmitting units, wherein the light-transmitting units are lens structures as shown in FIG. 1a. Then follow the process shown in Figure 1f to Figure 1j to complete the process of covering the quartz glass:

First, as shown in FIG. 1f, place the substrate 101 on which the bonding material is formed and the LED chip is fixed as shown in FIG. Specifically shown in the figure), the substrate 101 is placed in the slot to realize the fixing of the substrate. Also referring to Figure 1f, the top of the side wall of the first jig 1015 has a positioning component, for example, in this embodiment, the positioning component is a positioning spring 1016, and the number of positioning springs is at least two, which can be set according to actual needs. The number of positioning components. Of course, it can also be any other positioning components that can realize positioning and separation.

Then, as shown in FIG. 1 g , the quartz glass is placed in the second jig 1024 . As shown in FIG. 1g , in this embodiment, the quartz glass is a whole piece of quartz glass 1020 including a plurality of light-transmitting units 102 , and the light-transmitting unit 102 includes a light-transmitting area 1022 and a mount 1021 located around the light-transmitting area. The second fixture 1024 has a chamber for containing the quartz glass 1020. In order to accommodate and fix the quartz glass 1020, a layer of pyrolytic adhesive film is pasted on the inner wall of the chamber of the second fixture 1024, and then the entire piece of quartz glass 1020 is placed On the pyrolytic adhesive film, the quartz glass is accommodated and fixed in the second jig 1024 . Also as shown in FIG. 1 g , the top end of the side wall of the second jig 1024 also has a positioning component 1025 , and the positioning component 1025 cooperates with the positioning component 1016 of the first jig 1015 . For example, when the positioning component of the first jig is the positioning spring 1016 , the positioning of the second jig can be the positioning hole 1025 . The positioning components of the first jig and the second jig can be interchanged, subject to the ability to achieve positioning and separation.

Afterwards, as shown in FIG. 1h , the second fixture on which the quartz glass 1020 is fixed is turned over so that the quartz glass faces the substrate 101 . The positioning of the first fixture and the second fixture is realized by the positioning spring 1016 and the positioning hole 1025 . Through this positioning, each light-transmitting unit is aligned with the LED chip on the substrate, and preferably, the centerlines of the two coincide. As shown in FIG. 1 h , at this moment, the positioning spring 1016 is in contact with the positioning hole 1025 , but the quartz glass 1020 is not in contact with the substrate 101 .

Then, place the positioned first jig and second jig as a whole into a lamination equipment that can be vacuumed. As shown in Figure 1i, during the lamination process, the quartz glass is first bonded to the first jig on the substrate. Layer 1051 contacts. Since the cavity 104 is formed between the mounting seat 1021 of the light-transmitting unit and the light-transmitting area (convex lens) 1022 (refer to FIG. If it is accommodated in the cavity 104, it will not contact or be squeezed by the light-transmitting area, thereby ensuring the performance of the LED chip. In the process of lamination and vacuuming, since the height of the bonding material filled in the groove is higher than the height of the metal strip, the bonding material in the groove is squeezed to flow on the surrounding metal strip, such as As shown in Figure 1j, the amount of bonding material in the grooves becomes less, and the amount of bonding material on the metal strip gradually increases. Under the action of vacuum, the adhesive material can continue to flow to the position of the metal strip until the position where the adhesive material is lacking on the side of the metal strip is supplemented, covering the entire metal strip to form the first part of the first adhesive layer 1051 1051-1, thereby achieving a tight bond between the quartz glass and the substrate. The remaining bonding material in the groove forms the second part 1051-2 of the first bonding layer 1051, and the second part forms a continuous structure with the first part on the metal strip, further enhancing the bonding force between the substrate and the quartz glass, and enhancing The airtightness of the device. During the lamination and vacuuming process, the bonding layer is heated and baked to promote its flow during the heating process, and its curing is achieved during the baking process. At the same time, during the heating process, the pyrolytic adhesive film attached to the inner wall of the chamber of the second jig will decompose and lose its bonding effect, so that the separation of the quartz glass and the second jig is realized.

As shown in Figure 1j, the bonding material in the groove flows to the metal strip, and the bonding material in the groove becomes less and does not fill the groove. In an optional embodiment, the amount of bonding material filled in the groove can be adjusted so that after the lamination is vacuumed, the metal strip is evenly covered with the bonding material, and the groove is still filled with the bonding material. This can further improve the airtightness of the device.

Afterwards, as shown in FIG. 1k , the first jig and the second jig are removed. For example, first remove the vacuum, and at this time, under the restoring force of the positioning spring 1016, the first jig and the second jig are initially separated, and then the second jig and the first jig are separated, and the result shown in Figure 1k is obtained. The structure covered with quartz glass 1020 is shown. In this embodiment, the quartz glass is covered by the above method, and the bonding material in the groove flows from the groove to the metal coating in the non-functional area, and does not flow to the functional area and will not cause pollution to the functional area. At the same time, it can ensure that the deviation between the center position of the lens and the center position of the chip is less than 100 μm, and the left and right deviation of the central light emitting angle is less than ±3°.

S104: cutting, aligning the cutting area of the substrate and cutting until the substrate is cut through, so as to form the light emitting device.

As shown in FIG. 1k, the cutting area 1018 of the alignment substrate 101 is cut along the direction indicated by the arrow A1 to obtain the LED light emitting device shown in FIG. 1a. In this embodiment, a whole piece of quartz glass including a plurality of light-transmitting units is covered on the substrate, and the LED light-emitting device is obtained by cutting, so that the side walls of the obtained light-emitting device can be guaranteed to be flush, that is, in a direction perpendicular to the LED chip In the direction of the light emitting direction, the light-transmitting unit has the same width as the substrate, and the side walls of the light-transmitting unit are flush with the side walls of the substrate. Such a structure is conducive to a better positioning of the product in the braided vibrating plate, and a better improvement in the packaging yield.

Embodiment two

This embodiment provides an LED lighting device. As shown in FIG. The transparent unit 102 is connected to the substrate 101 and the bonding material layer of the transparent unit 102 .

In this embodiment, the substrate 1011, the LED chip 103, and the light-transmitting unit 102 are all the same as the substrate, LED chip, and light-transmitting unit 102 in Embodiment 1, and will not be repeated here. The difference lies in:

As shown in FIG. 2 a , in this embodiment, the adhesive material layer includes a first adhesive layer 1051 located between the non-functional area 1011 and the mounting seat and a second adhesive layer 1052 located on the sidewall of the mounting seat. In a preferred embodiment, the above-mentioned first adhesive layer 1051 and second adhesive layer 1052 located on the same side wall of the LED lighting device form a continuous structure, as shown in FIG. 2a , forming an "L"-shaped structure. In the light emitting direction of the LED lighting device, that is, the direction indicated by the arrow O in FIG.

In another optional embodiment of this embodiment, as shown in FIG. 2b, the non-functional area 1012 of the substrate 101 of the LED lighting device 100-2 is also formed with a metal coating, specifically, the metal coating of the non-functional area is formed on The area outside the cutting area 1018'. The metal coatings of the functional area and the non-functional area can be formed at the same time, and the metal coatings of the functional area 1011 and the non-functional area 1012 are spaced apart from each other. The thickness of the metal coating is between 30-100 μm, preferably about 50 μm. Since the metal plating layer has the aforementioned thickness, the substrate 101 forms grooves 106 between adjacent non-functional areas (see FIG. 6 a ). As shown in FIG. 2 b , at this time, the first adhesive layer 1051 includes a first portion 1051 - 1 located above the metal plating layer in the non-functional area and a second portion 1051 - 2 located in the peripheral area. In the light emitting direction of the LED lighting device and in the direction indicated by arrow O in FIG. 2b, the thickness of the first part 1051-1 is between 35 μm and 50 μm, and the thickness of the second part 1051-2 is between 50 μm and 150 μm. In the light emitting device 100-2, the first bonding layer and the second bonding layer also form an "L"-like structure.

The adhesive material layer with the "L"-shaped structure forms a covering structure for the non-functional area of the device and the mounting seat, and the above-mentioned adhesive material layer is fully formed between the mounting seat and the substrate, and there is no problem caused by the lack of adhesive material. Bubbles or gaps can significantly improve the airtightness and reliability of the product. In addition, the above-mentioned first adhesive layer 1051 and second adhesive layer 1052 can be formed of the same material or different materials, such as silica gel, white glue, fluororesin, etc., preferably have one or more of the following characteristics: It is a material with good performance, certain fluidity, and a certain reflection effect on the light emitted by the LED chip, so that it can not only improve the airtightness of the product, but also improve the service life of the product.

Still referring to FIG. 2 a and FIG. 2 b , in this embodiment, the above-mentioned light-transmitting unit 102 forms a lens structure, wherein the convex lens in the light-transmitting area 1022 is formed as a hemispherical convex lens. The ball diameter of the hemispherical convex lens is between 2.00mm-3.50mm, preferably 3.20mm, and the height of the entire light-transmitting unit is between 1.50mm-2.30mm, preferably 2.10mm. Under the action of the convex lens, as shown in FIG. 3 , the light emitting angle of the LED light emitting device is about 60°. The light emitting angle of the LED lighting device can also be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light-transmitting area. For example, when there is no filling material around the LED chip, that is, when the cavity 104 is air or nitrogen, the light emitting angle of the LED light-emitting device is between 55° and 80°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic When reflective materials such as glue are used, the light emission angle of the LED light emitting device 100-2 is between 80° and 120°.

As shown in Figure 4a, in another optional embodiment of this embodiment, the light-transmitting unit is also formed as a lens structure, including a mount 1021 and a light-transmitting area 1022, the difference is that the light-transmitting area is formed as a semi-ellipsoid type, and is a semi-ellipsoid in the direction of the major axis. The height H1 of the light-transmitting unit with the semi-ellipsoidal light-transmitting area (that is, the vertical distance between the highest point of the lens structure and the lowest surface) is about 3.00-3.50 mm, and the height H2 of the mounting seat is between 0.30-0.70 mm , the maximum width W of the convex lens is between 2.00mm and 3.50mm. As shown in FIG. 4 b , the light emitting angle of the light emitting device having the light-transmitting unit of the semi-ellipsoid light-transmitting region is about 35°. Likewise, the light output angle of the light emitting device with the semi-ellipsoidal light transmission unit can be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light transmission area. For example, when there is no filling material around the LED chip, that is, when the cavity 104 is air or nitrogen, the light emitting angle of the light emitting device is about 25°-55°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic glue, etc. When the reflective material is used, the light emitting angle of the light emitting device is between 55° and 75°.

In practical applications, any light-transmitting unit can be selected according to the requirements of the light-emitting angle. In this embodiment, the above-mentioned light-transmitting unit is a quartz glass lens, and may also be a plastic lens or the like.

This embodiment also provides a method for manufacturing a light-emitting device, as shown in FIG. 5 , the method includes the following steps:

S201: Provide a substrate, the substrate has a first surface and a second surface oppositely arranged, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;

S202: Provide an LED chip, and fix the LED chip on the functional area of the first surface of the substrate;

Referring to FIG. 6 a , firstly, a substrate 101 is provided, which may be any suitable substrate such as a ceramic substrate or a printed circuit board. In this embodiment, a planar ceramic substrate is taken as an example for illustration. The substrate 101 includes a first surface and a second surface oppositely arranged, and a functional area 1011 and a non-functional area 1012 are formed on the first surface, and electrode pads 1013 connected to the functional area 1011 are provided on the second surface (see FIG. 2a and Figure 2b). The functional area 1011 is formed as a die-bonding area for fixing LED chips, and a cutting area 1018 is formed between adjacent functional areas. In this embodiment, the area outside the functional area 1011 is defined as the non-functional area 1012 .

In an optional embodiment of this embodiment, as shown in FIG. 6 a , the non-functional area 1012 is also formed with a metal coating, specifically, the metal coating of the non-functional area is formed outside the cutting area 1018 . The metal coatings of the functional area and the non-functional area can be formed at the same time, and the metal coatings of the functional area 1011 and the non-functional area 1012 are spaced apart from each other. For example, the above-mentioned metal plating layer can be formed on the first surface of the substrate 101 by etching, deposition and other processes. The thickness of the metal coating is between 30-100 μm, preferably about 50 μm. Since the metal coating has the above thickness, the substrate 101 forms a groove 106 in the cutting area 1018 (see FIG. 6 a ).

After forming the above-mentioned functional area and non-functional area on the substrate 101, an LED chip 103 is provided. The LED chip can be any type of LED chip, for example, it can be an ultraviolet light with a wavelength of less than 400nm, especially a wavelength between 220nm and 385nm. Or a deep ultraviolet LED chip. In this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. The LED chip 103 is fixed on the functional area 1011 of the substrate 101 . For example, the LED chip can be fixed by various processes such as wire bonding, bonding, and welding. As shown in FIG. 6 a , this embodiment takes a flip-chip LED as an example, and the LED chip is bonded to the functional area 1011 . The electrode structure of the LED chip is led out through the electrode pads 1013 on the second surface of the substrate that communicate with the functional area 1011 .

The LED chips are fixed on the substrate and can be arranged in different ways. As shown in Figure 6b and Figure 6c, the LED chip and the substrate can be arranged side by side as shown in Figure 6b, and the sides of the LED chip and the side of the substrate are parallel, and the two are basically parallel to each other. It is also possible to arrange the LED chip and the substrate in the form of corner-to-edge as shown in FIG. 6 c , and the four corners of the LED chip are respectively opposite to the four side walls of the substrate. Especially when the size of the LED chips is relatively large, the arrangement shown in FIG. 6c can make full use of the substrate space and improve the utilization rate of the substrate. In practical applications, the arrangement of LEDs can be flexibly selected according to the size of the LED chip and the size of the substrate.

S203: Cover the substrate with a light-transmitting plate, connect the light-transmitting plate to the substrate through a first adhesive layer on the substrate outside the functional area, and cover the LED chip with the light-transmitting plate .

After the LED chip 103 is fixed on the substrate 101 , the substrate is covered with a light-transmitting plate to realize the packaging of the LED chip. In this embodiment, the above-mentioned light-transmitting plate is exemplified by quartz glass. First, the first bonding layer 1051 is formed on the surface of the non-functional area of the substrate 101 . The first adhesive layer 1051 can be an adhesive material with certain fluidity, such as silica gel, white glue, or fluororesin. In this embodiment, as shown in FIG. 7a, firstly, the first part 1051-1 of the first adhesive layer is formed on the metal plating layer of the non-functional region 1012, and its thickness is controlled between 35 μm˜100 μm, for example, about 50 μm. Quartz glass is then covered on the substrate. In this embodiment, the quartz glass is a whole piece of quartz glass with a plurality of light-transmitting units, wherein the light-transmitting units are lens structures as shown in FIGS. 2a-2c. The process of covering quartz glass is shown in Figures 8a to 8e:

First, as shown in FIG. 8a , place the substrate 101 on which the first adhesive layer is formed and the LED chips are fixed as shown in FIG. not specifically shown in the figure), the substrate 101 is placed in the slot to realize the fixing of the substrate. Also referring to Fig. 8a, the top of the side wall of the first jig 1015 has a positioning component, for example, in this embodiment, the positioning component is a positioning spring 1016, the number of positioning springs is at least two, and the required position can be set according to actual needs. The number of positioning components. Of course, it can also be any other positioning components that can realize positioning and separation.

Then, as shown in FIG. 8 b , the quartz glass is placed in the second jig 1024 . As shown in FIG. 8 b , in this embodiment, the quartz glass is a whole piece of quartz glass 1020 including a plurality of light-transmitting units 102 , and the light-transmitting unit 102 includes a light-transmitting area 1022 and a mount 1021 located on the periphery of the light-transmitting area. The second fixture 1024 has a chamber for containing the quartz glass 1020. In order to accommodate and fix the quartz glass 1020, a layer of pyrolytic adhesive film is pasted on the inner wall of the chamber of the second fixture 1024, and then the entire piece of quartz glass 1020 is placed On the pyrolytic adhesive film, the quartz glass is accommodated and fixed in the second jig 1024 . Also as shown in FIG. 8 b , the top end of the side wall of the second jig 1024 also has a positioning component 1025 , and the positioning component 1025 cooperates with the positioning component 1016 of the first jig 1015 . For example, when the positioning component of the first jig is the positioning spring 1016 , the positioning of the second jig can be the positioning hole 1025 . The positioning components of the first jig and the second jig can be interchanged, subject to the ability to achieve positioning and separation.

Afterwards, as shown in FIG. 8 c , the second fixture on which the quartz glass 1020 is fixed is turned over so that the quartz glass faces the substrate 101 . The positioning of the first fixture and the second fixture is realized by the positioning spring 1016 and the positioning hole 1025 . Through this positioning, each light-transmitting unit is aligned with the LED chip on the substrate, and preferably, the centerlines of the two coincide. As shown in FIG. 8 c , at this moment, the positioning spring 1016 is in contact with the positioning hole 1025 , and the quartz glass 1020 is not in contact with the substrate 101 .

Then, place the positioned first jig and second jig as a whole into a lamination equipment that can be vacuumed, as shown in Figure 8d, during the lamination process, the first jig and the second jig on the substrate are vacuumed to make the quartz glass first contact with the second jig on the substrate. An adhesive layer 1051 is in contact. Since the cavity 104 is formed between the mounting seat 1021 of the light-transmitting unit and the light-transmitting area (convex lens) 1022 (refer to FIG. Layers are in contact with each other, while the LED chip is accommodated in the cavity 104 and will not contact or be squeezed by the light-transmitting region, thereby ensuring the performance of the LED chip. During the lamination process, the first adhesive layer is heated and baked to achieve its curing. At the same time, during the heating process, the pyrolytic adhesive film attached to the inner wall of the chamber of the second jig will decompose and lose its bonding effect, and the quartz glass will be separated from the second jig.

Finally, as shown in FIG. 8e, the first jig and the second jig are removed. For example, first remove the vacuum, and at this time, under the restoring force of the positioning spring 1016, the first jig and the second jig are initially separated, and then the second jig and the first jig are separated, and the result shown in Figure 8e is obtained. The structure covered with quartz glass 1020 is shown.

In this embodiment, by covering the quartz glass with the above method, it can be ensured that the deviation between the center position of the lens and the center position of the chip is less than 100 μm, and the left and right deviation of the central light emitting angle is less than ±3°.

In another optional embodiment of this embodiment, different from the first bonding layer formed on the metal plating layer of the non-functional area as shown in FIG. 7a, as shown in FIG. The grooves 106 between the metal plating layers are filled with the first adhesive layer 1051 . The thickness of the first adhesive layer 1051 in the groove 106 is greater than the thickness of the metal plating layer forming the functional area and the non-functional area. In a preferred embodiment, the first adhesive layer 1051 is about 50 μm-200 μm higher than the metal plating layer. Then, the process of covering the quartz glass is also completed according to the process shown in Fig. 8a to Fig. 8e. Place the positioned first jig and second jig as a whole into a lamination device that can be vacuumed, so that the quartz glass is first in contact with the first adhesive layer 1051 in the groove, and then during the lamination process, the high The bonding material of the metal coating in the non-functional area is extruded to flow on the surrounding metal coating, so that the amount of bonding material in the groove position originally filled with silica gel is reduced, and the metal coating in the non-functional area is covered with bonding material and is compatible with the metal coating. Quartz glass bonded. Then vacuumize, and under the condition of maintaining vacuum, the bonding material higher than the metal coating in the groove will form an irregular disguised flow, and flow to the metal coating in the non-functional area again, complementing the groove and the non-functional area. and/or locations where bonding material is missing on the metallization. After baking, the airtightness of the product is improved again. During the above process, the bonding material in the groove flows to the metal coating in the non-functional area through the groove, and does not flow to the functional area and does not cause pollution to the functional area. It can also ensure that the deviation between the center position of the lens and the center position of the chip is less than 100 μm, and the left and right deviation of the central light emitting angle is less than ±3°.

At this time, the adhesive material in the groove forms the second part 1051-2 of the first adhesive layer 1051, and the adhesive material above the metal plating layer of the non-functional area forms the first part 1051-1 of the first adhesive layer.

S204: forming a first trench above the cutting area;

As shown in Figure 9, on the basis of the structure shown in Figure 8e, along the direction indicated by the arrow A11 in Figure 9, the quartz glass is cut for the first time between adjacent light-transmitting units, and the quartz glass is cut through, Thus, a first groove 1023 is formed above the cutting area between adjacent light-transmitting units, and the first groove 1023 communicates with the groove 106 above the cutting area on the substrate.

S205: forming a second adhesive layer in the first groove;

As shown in FIG. 10 , the first grooves 1023 are filled with adhesive material to form second adhesive layers 1052 respectively. The second adhesive layer can be the same material as the first adhesive layer or can be a different material. It can also be selected from silica gel, white glue or fluororesin. Taking silica gel as an example, after the groove and the first trench are filled with silica gel to form the second bonding layer, the silica gel is baked to make it solidify. As shown in Figure 10, when the groove 106 is not filled by the first adhesive layer, the adhesive material filled in the first groove will flow into and fill the groove 106, forming the second layer of the first adhesive layer. Section 1051-2.

In this embodiment, along the light emitting direction of the LED lighting device, the thickness of the first bonding layer is between 35 μm and 150 μm, the thickness of the second bonding layer is greater than the thickness of the first bonding layer, and the second bonding layer The thickness of the layer is about 200 μm to 400 μm. More specifically, along the light emitting direction of the LED lighting device, the thickness of the first part of the first bonding layer is between 35 μm and 50 μm, and the thickness of the second part is between 50 μm and 150 μm.

S206: Carrying out a second cutting, aligning the cutting regions and cutting until the substrate is cut through, so as to form the light emitting device.

Also referring to FIG. 10, a second bonding layer is formed. At the position of the second bonding layer, the product is cut along the direction shown by arrow A12 in FIG. 10, and the second bonding layer 1052 and the substrate 101 are cut in sequence, The substrate 101 is cut through to obtain the LED lighting device shown in FIG. 2b. In this embodiment, in the direction perpendicular to the cutting direction (arrows A11 and A12), the width of the second cutting is smaller than the width of the first cutting, thereby ensuring that the formed LED light-emitting device remains on the side wall A layer of bonding material of a certain width. In a preferred embodiment, the width of the first cut is twice the width of the second cut, and the thickness of the adhesive material layer remaining on the sidewall of the LED lighting device is 1 times the width of the second cut. /2.

As shown in Figure 2b, the side walls of the LED light-emitting device are generally planar, that is, the side walls of the second adhesive layer, the side walls of the first adhesive layer, and the side walls of the substrate are flush, which is beneficial to the product A better position in the braided vibrating plate can better improve the packaging yield.

As shown in FIG. 11a, in another optional embodiment of this embodiment, in step S103, the provided quartz glass is a plurality of individual light-transmitting units 102, and the light-transmitting units are also lens structures, including mounting bases 1021 and a light-transmitting region 1022 in the form of a convex lens. The light-transmitting unit 102 can be an independent light-transmitting unit cut from a whole piece of quartz glass, or can be an independent light-transmitting unit formed separately. At this time, as shown in FIG. 11b, the substrate 101 on which the first adhesive layer is formed and the LED chip is fixed is also placed in the first jig 1015. The difference from FIG. 8a is that the first jig 1015 shown in FIG. 11b There are a plurality of positioning components at the top of the side wall, for example, in this embodiment, the positioning components are positioning springs 1016, and the number of positioning springs corresponds to the number of positioning components of the second jig to be described below. Of course, it can also be any other positioning components that can realize positioning and separation.

Then, as shown in FIG. 11 c , a plurality of light-transmitting units 102 are placed in the second jig 1024 . As shown in Figure 11c, in this embodiment, the second jig 1024 has a plurality of chambers for accommodating light-transmitting units, and the top ends of the side walls of the second jig 1024 and the top ends of the side walls of adjacent chambers are arranged The positioning component 1025 cooperates with the positioning component 1016 of the first jig 1015 . For example, when the positioning component of the first jig is the positioning spring 1016 , the positioning of the second jig can be the positioning hole 1025 . The positioning components of the first jig and the second jig can be interchanged, subject to the ability to achieve positioning and separation. Subsequent steps are the same as those shown in FIG. 8c to FIG. 8e , and will not be repeated here.

Since the light-transmitting units are independent units, the first groove 1023 is formed between the light-transmitting units without first cutting. After the structure shown in FIG. 11a is obtained, follow-up steps are still performed as shown in FIG. 10 , and finally the LED lighting device shown in FIG. 2b is also obtained.

In another optional embodiment of this embodiment, as shown in FIG. 2c, the adhesive material layer of the LED lighting device 100-2" further includes a fourth adhesive layer 1054 formed on the upper surface of the partially transparent unit. Specifically, the fourth adhesive layer is formed on at least part of the upper surface of the mounting seat of the light-transmissive unit. In the LED lighting device 100-2" shown in FIG. 2c, the fourth adhesive layer is formed on the light-transmissive unit part of the mount on the upper surface. It can be understood that the fourth adhesive layer can be formed on the entire upper surface of the mount. The fourth adhesive layer forms a continuous structure with the second adhesive layer, and the fourth adhesive layer can be formed while the second adhesive layer is being formed. In the light emitting direction of the LED light emitting device, that is, the direction indicated by the arrow O in FIG. 2 c , the thickness of the fourth adhesive layer is about 10 μm˜200 μm. The bonding material layer formed above wraps the light-transmitting unit, which can further improve the airtightness of the device, and at the same time increase the bonding firmness of the light-transmitting unit and the substrate.

Embodiment Three

This embodiment also provides an LED light-emitting device, and the similarities with Embodiment 2 will not be repeated, and the difference lies in:

As shown in Fig. 12a and Fig. 12b, in the LED lighting device 100-3 of this embodiment, the adhesive material layer connecting the substrate 101 and the light-transmitting unit 102 includes the first adhesive layer between the non-functional area 1012 and the mounting seat. In addition to the layer 1051 and the second adhesive layer 1052 located on the sidewall of the mount, a third adhesive layer 1053 is located on at least part of the sidewall of the substrate 101 . The third adhesive layer forms a continuous structure with the first adhesive layer and the second adhesive layer, forming a structure similar to a "T".

Referring to FIG. 12a, a step 1017 is formed on the side wall of the substrate 101, and the third bonding layer is formed on the surface and the side wall of the step 1017, and is connected with the second bonding layer. In this embodiment, the above-mentioned "T"-shaped adhesive material layer wraps the light-transmitting unit and part of the substrate, which can further improve the airtightness of the product.

This embodiment also provides the manufacturing method of the LED lighting device shown in FIG. 12a, which differs from the manufacturing method of the LED lighting device provided in Embodiment 2 in that:

As shown in FIG. 13, after the lens is cut through to form the first groove 1023 through the first cutting shown in FIG. A second trench 1014 is formed in the substrate 101 . The second groove forms a continuous structure with the groove 106 and the first groove 1023 . Afterwards, as shown in FIG. 14 , the bonding material is filled in the second groove 1014 and the first groove 1023 to form a third bonding layer 1053 and a second bonding layer 1052 in sequence. Then, also as shown in FIG. 14 , the second cutting is carried out along the direction shown by the arrow A12, and the second adhesive layer 1052, the third adhesive layer 1053 and the substrate 101 are cut sequentially until the substrate is cut through, and FIG. 12a is obtained. The LED lighting device shown.

In another optional embodiment of this embodiment, as shown in FIG. 11a, after covering a plurality of independent light-transmitting units on the substrate 101 and forming first grooves 1023 between adjacent light-transmitting units, As shown in FIG. 15 , along the direction indicated by the arrow A11 , the substrate is cut for the first time through the first groove 1023 , and part of the substrate 101 is cut to form the second groove 1014 on the substrate 101 .

As mentioned above, in this embodiment, when performing the first cutting to form the second groove, the substrate is partially cut, and the thickness of the cut substrate, that is, the depth of the formed second groove is about 1% of the overall thickness of the substrate. /3 to 2/3, in order to ensure the strength of the substrate itself while forming the second trench.

After that, as also shown in FIG. 14 , the second groove 1014 and the first groove 1023 are filled with adhesive material to form a third adhesive layer 1053 and a second adhesive layer 1052 in sequence. Then, also as shown in FIG. 14 , the second cutting is carried out along the direction shown by the arrow A12, and the second adhesive layer 1052, the third adhesive layer 1053 and the substrate 101 are cut sequentially until the substrate is cut through, and FIG. 12a is obtained. The LED lighting device shown. As shown in FIG. 12a, in the light-emitting device 100-3, along the light emitting direction of the LED light-emitting device, that is, the direction indicated by the arrow O in FIG. 12a, the thickness t1 of the first adhesive layer 1051 is between 35 μm and 150 μm, wherein, The thickness of the first part 1051-1 is between 35 μm and 50 μm, the thickness of the second part 1051-2 is between 50 μm and 150 μm, the thickness t2 of the second adhesive layer is between 200 μm and 400 μm; the thickness t3 of the third adhesive layer is about It is about 1/3 to 2/3 of the overall thickness of the substrate.

In another optional embodiment of this embodiment, as shown in FIG. 12 b , in the LED lighting device, the third adhesive layer 1053 is formed on the entire sidewall of the substrate to wrap the sidewall. In this optional embodiment, the adhesive material layer formed by the first adhesive layer 1051, the second adhesive layer 1052, and the third adhesive layer 1053 forms a wrapping effect on the lens 102 and the substrate 101, thereby further improving The airtightness of the device.

The difference between the manufacturing method of the LED lighting device shown in FIG. 12b and the manufacturing method shown in FIG. 12a is that the substrate is basically placed on a jig that can fix the substrate, for example, the substrate can be adhered to an adhesive film superior. Then the substrate is cut, and the substrate is completely cut through to form a second groove that runs through the entire substrate. Then, a third adhesive layer covering the entire sidewall of the substrate as shown in FIG. 12b is formed in the second groove. Subsequent steps are the same as the steps of forming the LED lighting device in FIG. 12 a , and will not be repeated here.

In another optional embodiment of this embodiment, as shown in FIG. 12c, the adhesive material layer of the LED lighting device 100-4' further includes a fourth adhesive layer 1054 formed on the upper surface of the partially transparent unit. Specifically, the fourth adhesive layer is formed on at least part of the upper surface of the mounting base of the light transmission unit. In the LED lighting device 200-4' shown in FIG. 12c, the fourth adhesive layer is formed on part of the upper surface of the mounting seat of the light-transmitting unit. It can be understood that the fourth adhesive layer can be formed on the entire upper surface of the mount. The fourth adhesive layer forms a continuous structure with the second adhesive layer, and the fourth adhesive layer can be formed while the second adhesive layer is being formed. In the light emitting direction of the LED light emitting device, that is, in the direction indicated by the arrow O in FIG. 12c, the thickness t4 of the fourth bonding layer is about 10 μm˜200 μm. The bonding material layer formed above wraps the light-transmitting unit, which can further improve the airtightness of the device, and at the same time increase the bonding firmness of the light-transmitting unit and the substrate.

Embodiment Four

This embodiment also provides an LED lighting device. As shown in FIG. The light-transmitting unit 102 connects the substrate 201 and the bonding material layer of the light-transmitting unit 202 .

In this embodiment, the above-mentioned light-transmitting unit 102 is the same as the light-transmitting unit 102 in Embodiment 1, the LED chip 203 is the same as the LED chip 103 in Embodiment 1, and the bonding material layer in this embodiment is also the same as that in Embodiment 2. The material layers are the same and will not be repeated here. The difference from Example 2 is:

In this embodiment, the substrate 201 is a bracket having a cup structure. The substrate 201 also includes a functional area 2011 and a non-functional area 2012 formed on the first surface, and an electrode pad 2013 provided on the second surface and connected to the functional area 2011 . The functional area 2011 is formed on the bottom surface of the bowl structure, the non-functional area is the upper surface of the side wall 2010 of the substrate, and the non-functional area includes the cutting area 2018'. In an optional embodiment, the functional area can also be formed by a metal coating formed on the bottom surface of the bowl structure, and the thickness of the metal coating is between 35 μm-100 μm, preferably about 50 μm. In this embodiment, as shown in FIG. 16a, the upper surface of the side wall 2010 is directly used as the non-functional area.

The bonding material layer of the LED lighting device of this embodiment also forms an "L"-shaped structure, so the airtightness and reliability of the device can be improved.

Embodiment five

This embodiment also provides an LED lighting device. As shown in FIG. 16b, the LED lighting device 200-1' includes a substrate 201, an LED chip 203 arranged on the first surface of the substrate, and the covering LED chip 203 is arranged on the substrate 201. The transparent unit 102 is connected to the substrate 201 and the bonding material layer of the transparent unit 202 .

The similarities between this embodiment and Embodiment 4 will not be repeated. The difference is that, as shown in FIG. The surface, ie the surface close to the LED chip, has a planar structure, and the light-transmitting unit 102 does not form a cavity as shown in FIG. 16 a , but is flush with the lower surface of the mount. The light transmission unit reduces the distance between the lens structure and the LED chip, can provide better transmittance, and improves the light output effect of the device on the basis of improving the airtightness of the device.

Embodiment six

This embodiment also provides an LED lighting device. As shown in FIG. The light-transmitting unit 102 connects the substrate 201 and the bonding material layer of the light-transmitting unit 202 .

The similarities between this embodiment and Embodiment 4 will not be repeated. The difference is that in this embodiment, as shown in FIG. 17a, in the LED lighting device 200-2 of this embodiment, the adhesive material In addition to the first adhesive layer 2051 located between the non-functional area 2012 and the mounting base 1021 and the second adhesive layer 2052 located on the side wall of the mounting base, a third adhesive layer located on at least part of the side wall of the substrate 201 is also included. Junction layer 2053. The third adhesive layer forms a continuous structure with the first adhesive layer and the second adhesive layer, forming a structure similar to a "T".

The bonding material layer of the LED lighting device of this embodiment also forms a "T"-shaped structure, so the airtightness and reliability of the device can be improved.

Embodiment seven

This embodiment also provides an LED lighting device. As shown in FIG. 17b, the LED lighting device 200-2' includes a substrate 201, an LED chip 203 arranged on the first surface of the substrate, and the covering LED chip 203 is arranged on the substrate 201. The transparent unit 102 is connected to the substrate 201 and the bonding material layer of the transparent unit 202 .

The similarities between this embodiment and Embodiment 6 will not be described again. The difference is that, as shown in FIG. The surface, ie the surface close to the LED chip, is a planar structure, and the light-transmitting unit 102 does not form a cavity as shown in FIG. 17a, but is flush with the lower surface of the mount. The light transmission unit reduces the distance between the lens structure and the LED chip, can provide better transmittance, and improves the light output effect of the device on the basis of improving the airtightness of the device.

Embodiment eight

This embodiment also provides an LED light emitting device. As shown in FIG. 18a, the LED light emitting device 200-3 includes a substrate 201, an LED chip 203 disposed on the first surface of the substrate, and an The light-transmitting unit 102 connects the substrate 201 and the bonding material layer of the light-transmitting unit 202 .

As shown in FIG. 18 a , in this embodiment, the above-mentioned substrate 201 is the same as that of Embodiment 4, and both are brackets with bowls. The LED chip 203 is fixed in the bowl provided with the functional area 2011 , and the upper surface of the bracket side wall 2010 is used as the non-functional area 2012 .

Also referring to FIG. 18 a , in this embodiment, the light-transmitting unit 202 is a planar structure, for example, may be flat quartz glass or plastic. Taking flat quartz glass as an example for illustration, in this embodiment, the thickness of the flat quartz glass plate is smaller than the thickness of the LED chip and smaller than the height of the side wall of the cup holder. For example, the thickness of the quartz glass is about 350 μm, the thickness of the chip is about 500 μm, and the height of the side wall of the cup holder is greater than 1000 μm. The light-transmitting unit 202 also includes a mounting base 2021 and a light-transmitting area 2022. The mounting base is bonded to the upper surface of the side wall 2010 of the substrate 201 through a first adhesive layer 2051. The light-transmitting area covers the cup area, that is, covers the bowl. LED chips in a cup. As shown in FIG. 18a, the side walls of the LED lighting device 200-1 are flush, that is, the side walls of the light-transmitting unit, the side walls of the first adhesive layer 2051, and the side walls of the cup holder are flush. Such a structure is conducive to a better positioning of the product in the braided vibrating plate, and a better improvement in the packaging yield.

This embodiment also provides a method for manufacturing the LED light-emitting device shown in FIG. 18a. Referring also to FIG. 1c, the method also includes the following steps:

S101: Provide a substrate, the substrate has a first surface and a second surface oppositely arranged, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;

S102: Provide an LED chip, and fix the LED chip on the functional area of the first surface of the substrate;

Referring to FIG. 19 , firstly, a base plate 201 is provided, which is a bracket with a cup. The substrate 201 includes a first surface and a second surface opposite to each other. A functional area 2011 is formed on the first surface, and an electrode pad 2013 communicating with the functional area 2011 is provided on the second surface. The above-mentioned functional area is formed on the inner surface of the bowl superior. The above-mentioned functional area can also be formed by forming a metal coating on the first surface of the substrate 201 , the thickness of the metal coating is between 30 μm and 100 μm, preferably about 50 μm. For example, the functional region 2011 may be formed on the first surface of the substrate 201 by etching, deposition and other processes. In this embodiment, as shown in FIG. 19 , part of the upper surface of the side wall 2010 is directly used as the non-functional area 2012 , and the cutting area 2018 of the non-functional area is formed on the upper surface of the side wall 2010 of the bracket.

After the above functional areas are formed on the substrate 201, an LED chip 203 is provided. The LED chip can be any type of LED chip, for example, it can be an ultraviolet or deep ultraviolet LED with a wavelength of less than 385nm, especially a wavelength between 220nm and 385nm. Chip, in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. The LED chip 203 is fixed on the functional area 2011 of the substrate 201 and fixed in the bowl. For example, the LED chip can be fixed by various processes such as wire bonding, bonding, and welding. As shown in FIG. 19 , this embodiment takes flip-chip LED as an example, and the LED chip is bonded to the functional area 2011 . The electrode structure of the LED chip is led out through the electrode pad 2013 on the second surface of the substrate, which communicates with the functional area 2011 .

S103: Cover the substrate with a light-transmitting plate, and connect the light-transmitting plate to the substrate through an adhesive layer on the substrate outside the functional area. The light-transmitting plate covers the LED chip;

After the LED chips 203 are fixed on the substrate 201 , the substrate is covered with a light-transmitting plate to realize the packaging of the LED chips. In this embodiment, the above-mentioned light-transmitting plate is exemplified by quartz glass. As shown in FIG. 20 , firstly, a first adhesive layer 2051 is formed on the upper surface of the side wall 2010 of the substrate 201 . The first adhesive layer 2051 can be silica gel, white glue or fluorine resin. The bonding layer has certain fluidity, and its thickness is controlled to be less than 50 μm. Quartz glass is then overlaid on the substrate, attached to an adhesive layer. In this embodiment, the quartz glass is a whole piece of quartz glass 2020 with a plurality of light-transmitting units, wherein the light-transmitting unit is a plate-type light-transmitting unit 202 as shown in FIG. 18 a . Similarly, the substrate 201 may be covered with quartz glass 2020 by using the process of FIGS. 8 a to 8 d , and this process will not be described in detail here, and the description of Embodiment 1 may be referred to.

Finally, as shown in FIG. 21 , a structure in which the substrate 201 is covered with quartz glass 2020 is formed, wherein each light-transmitting unit corresponds to each LED chip one by one.

In this embodiment, by covering the quartz glass with the above method, it can be ensured that the deviation between the center position of the lens and the center position of the chip is less than 100 μm, and the left and right deviation of the central light emitting angle is less than ±3°.

S104: cutting, aligning the cutting area of the substrate and cutting until the substrate is cut through, so as to form the light emitting device.

After forming the structure shown in FIG. 21 , align the cutting area of the side wall of the bracket and cut until cutting through the substrate 201 to obtain the LED lighting device shown in FIG. 18 a .

In another optional embodiment of this embodiment, as shown in FIG. 18b, in the light-emitting device 200-3', the adhesive material layer includes a first adhesive layer 2051 located on the surface of the side wall and a first adhesive layer 2051 located on the light-transmitting unit. A second adhesive layer 2052 on the sidewall. The above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, forming a structure similar to an "L", forming a wrapping effect on the light-transmitting unit, thereby greatly improving the firm adhesion between the light-transmitting unit and the substrate and the airtightness of the device.

Also referring to FIG. 5, forming the light emitting device shown in FIG. 18b also includes the following steps:

S201: Provide a substrate, the substrate has a first surface and a second surface oppositely arranged, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;

S202: Provide an LED chip, and fix the LED chip on the functional area of the first surface of the substrate;

S203: Cover the substrate with a light-transmitting plate, and connect the light-transmitting plate to the substrate through a first adhesive layer on the substrate outside the functional area. The light-transmitting plate covers the LED chip;

S204: forming a first trench above the cutting area;

The above steps S201-S203 are the same as the steps S101-S103 of forming the light-emitting device in FIG. 18a, and will not be repeated here.

After the above-mentioned steps S201-S203 form the structure shown in Figure 21, as shown in Figure 22, on the basis of the structure in Figure 21, along the direction shown by the arrow A21 in Figure 22, between adjacent light-transmitting units The quartz glass is cut for the first time, and the quartz glass is cut through, thereby forming a first groove 2023 between adjacent light-transmitting units.

S205: Form a second adhesive layer in the first groove, where the second adhesive layer forms a continuous structure with the first adhesive layer;

As shown in FIG. 23 , the first groove 2023 is filled with an adhesive material to form a second adhesive layer 2052 . The second adhesive layer can be the same material as the first adhesive layer or can be a different material. It can also be selected from silica gel, white glue or fluororesin. Taking silica gel as an example, after the silica gel is filled in the first trench to form the second adhesive layer 2052, the silica gel is baked to cure it.

In this embodiment, the thickness of the first adhesive layer is smaller than the thickness of the second adhesive layer, and the thickness of the first adhesive layer is about 35 μm to 150 μm, and the thickness of the second adhesive layer is about 200 μm to 400 μm .

S206: Perform a second cutting, cutting along the second adhesive layer until cutting through the substrate, so as to form the light emitting device.

Referring also to FIG. 23, after the second adhesive layer is formed, the product is cut along the direction shown by arrow A22 in FIG. 23 at the position of the second adhesive layer, and the second adhesive layer 2052, the first The adhesive layer 2051 and the substrate 201 are cut through the substrate 201 to obtain the LED lighting device shown in FIG. 18b. In this embodiment, in the direction perpendicular to the cutting direction (arrows A21 and A22), the width of the second cutting is smaller than the width of the first cutting, thereby ensuring that the formed LED light-emitting device remains on the side wall A layer of bonding material of a certain width. In a preferred embodiment, the width of the first cut is twice the width of the second cut, and the thickness of the adhesive material layer remaining on the sidewall of the LED lighting device is 2 times the width of the second cut. times.

As shown in Figure 18b, the side walls of the LED light-emitting device are generally planar, that is, the side walls of the second adhesive layer, the side walls of the first adhesive layer, and the side walls of the substrate are flush. At the same time of air tightness, it is beneficial to better position the product in the braided vibrating plate, and better improve the packaging yield.

As shown in Figure 24, in another optional embodiment of this embodiment, in step S103, the quartz glass provided is a plurality of individual light-transmitting units 202, the light-transmitting units are also flat quartz glass, and the light-transmitting units It includes a mounting seat 2021 and a light-transmitting area 2022 . The light-transmitting unit 202 may be an independent light-transmitting unit cut from a whole piece of quartz glass, or may be an independent light-transmitting unit formed separately. Similarly, a plurality of light-transmitting units are covered on the substrate through the process shown in FIGS. 8a to 8d to obtain the structure shown in FIG. 24 . Since the light-transmitting units are independent units, the first groove 2023 is formed between the light-transmitting units without first cutting. After the structure shown in FIG. 24 is obtained, follow-up steps are still carried out as shown in FIG. 23 , and finally the LED lighting device shown in FIG. 18 b is also obtained.

Embodiment nine

This embodiment also provides an LED lighting device, and the similarities with the eighth embodiment will not be repeated, and the difference lies in:

As shown in FIG. 25a, the adhesive material layer connecting the substrate 201 and the light-transmitting unit 202 in the LED lighting device 200-4 of this embodiment includes the first adhesive layer between the surface of the side wall of the cup holder and the mounting seat. In addition to the junction layer 2051 and the second adhesive layer 2052 located on the sidewall of the mounting seat, it also includes a third adhesive layer 2053 located on a part of the sidewall of the substrate 201 . The third adhesive layer forms a continuous structure with the first adhesive layer and the second adhesive layer, forming a structure similar to a "T".

Also referring to Figure 25a, a step 2017 is formed on the side wall of the substrate 201 (and the side wall of the side wall 2010), and the third bonding layer is formed on the surface and the side wall of the step 2017, and is combined with the third bonding layer and the first bonding layer. The two adhesive layers are connected. In this embodiment, the above-mentioned "T"-shaped adhesive material layer wraps the light-transmitting unit and part of the substrate, which can further improve the airtightness of the product.

This embodiment also provides the manufacturing method of the LED lighting device shown in FIG. 25a, which differs from the manufacturing method of the LED lighting device provided in Embodiment 1 in that:

As shown in FIG. 26, after the quartz glass 2020 is cut through to form the first groove 1023 through the first cutting shown in FIG. , forming a second trench 2014 in the substrate 201 . The second trench forms a continuous structure with the first trench 2023 . After that, as shown in FIG. 27 , the second groove 2014 and the first groove 2023 are filled with adhesive material to form a third adhesive layer 2053 and a second adhesive layer 20523 in sequence. Then, also as shown in FIG. 27, a second cutting is performed along the direction shown by arrow A22, and the third adhesive layer 2053, the second adhesive layer 2052, and the substrate 201 are cut in sequence until the substrate is cut through, and FIG. 25a is obtained. The LED lighting device shown.

In another optional embodiment of this embodiment, as shown in FIG. 24 , after covering a plurality of independent light-transmitting units on the substrate 201 and forming first grooves 2023 between adjacent light-transmitting units, As shown in FIG. 28 , along the direction indicated by the arrow A21 , the substrate is cut for the first time through the first groove 2023 , a part of the substrate 201 is cut, and the second groove 2014 is formed on the substrate 201 . In this embodiment, the second cutting is performed to partially cut the substrate, and the thickness of the cut substrate, that is, the depth of the formed second groove is about 1% of the thickness of the side wall of the substrate (thickness along the cutting direction). /2, preferably less than 1/2 of the thickness of the sidewall, so as to ensure the strength of the substrate itself while forming the second trench.

After that, as also shown in FIG. 27 , the second groove 2014 and the first groove 2023 are filled with adhesive material to form a third adhesive layer 2053 and a second adhesive layer 2052 in sequence. Then, also as shown in FIG. 27 , the second cutting is performed along the direction shown by the arrow A22, and the second adhesive layer 2052, the third adhesive layer 2053 and the substrate 201 are sequentially cut until the substrate is cut through, and FIG. 25a is obtained. The LED lighting device shown.

In order to verify the airtightness of the LED light-emitting device of the present invention, the LED light-emitting device in the prior art and the LED light-emitting device of the present invention including adhesive material layers with different structures are subjected to a He gas leakage test, and the figure of the present invention is selected. 1a, LED lighting devices 100-1, 100-2, and 100-3 shown in FIG. 2b and FIG. 12a are used as test objects, wherein the adhesive material layer of the lighting device 100-1 only includes the non-functional area and the light-transmitting unit between the first adhesive layer; the adhesive material layer of the light-emitting device 100-2 includes the above-mentioned first adhesive layer and the second adhesive layer on the side wall of the light-transmitting unit, and the adhesive material layer forms an "L"structure; the bonding material layer of the light emitting device 100-3 includes the first bonding layer, the second bonding layer, and the third material layer located on a part of the side wall of the substrate, and the bonding material layer forms a "T" shape structure. The airtightness test results of the above-mentioned light emitting devices are shown in Fig. 29. It can be seen from Fig. 29 that the helium leakage rate of the light emitting device 100-1 of the present application is significantly lower than that of the light emitting device in the prior art. The helium leakage rate of the light emitting devices in the technology is above 9.0×10 ^-9 Pa·m ² /s, but the helium leakage rate of the light emitting device 100-1 of the present application is significantly lower than 9.0×10 ^-9 Pa·m ² /s, mostly concentrated at 6.0×10 ^-9 Pa·m ² /s. It can be seen that the airtightness of the light emitting device 100 - 1 of the present application is significantly improved compared with the light emitting device in the prior art, and thus the reliability is also significantly improved.

Further comparing the light-emitting devices 100-1, 100-2 and 100-3 of the present application, it can also be seen from FIG. 29 that compared with the light-emitting device 100-1, the He gas leakage rate of the light-emitting device 100-2 and the light-emitting device 100-3 further reduced. Specifically, the He gas leakage rates of the light emitting devices 100-3 are all less than 3.5×10 ^-9 Pa·m ² /s, and the He gas leakage rates of 80% of the light emitting devices 100-2 are less than 5.0×10 ^-9 Pa·m ² /s. In summary, it can be seen that the airtightness of the light-emitting device with the "L"-shaped or "T"-shaped adhesive material layer can be further improved, and the reliability can also be significantly improved.

In another optional embodiment of this embodiment, as shown in FIG. 25b, in the LED lighting device 200-4', the third adhesive layer 2053 is formed on the entire side wall of the substrate to wrap the side wall. . In this optional embodiment, the adhesive material layer formed by the first adhesive layer 2051, the second adhesive layer 2052 and the third adhesive layer 2053 forms a wrapping effect on the lens 202 and the substrate 201, thereby further improving The airtightness of the device.

The difference between the manufacturing method of the LED light-emitting device shown in FIG. 25b and the manufacturing method shown in FIG. 25a is that the substrate is basically placed on a jig that can fix the substrate, for example, the substrate can be adhered to an adhesive film superior. Then the substrate is cut, and the substrate is completely cut through to form a second groove that runs through the entire substrate. Then, a third adhesive layer covering the entire sidewall of the substrate as shown in FIG. 25b is formed in the second trench. Subsequent steps are the same as those for forming the LED light emitting device in FIG. 25 a , and will not be repeated here.

The present invention only illustrates that the third adhesive layer can be formed on the entire side wall of the substrate with the bowl by using the LED lighting device shown in FIG. 25b. It can be understood that, in the LED lighting device shown in Fig. 17a and Fig. 17b, the third adhesive layer can also be formed on the entire side wall of the substrate, which will not be described in detail here.

Embodiment ten

This embodiment also provides an LED lighting device, and the similarities with the eighth embodiment will not be repeated, and the difference lies in:

As shown in Figure 30, in this embodiment, a step 207 is formed on the upper surface of the bracket side wall 2010 of the substrate 201 of the LED lighting device 200-5, and the step 207 is formed on the bracket side wall 2010 close to the cup (and the functional area) side. The light transmitting unit 202 is disposed on the step 207 . The first adhesive layer 2051 of the adhesive material layer is located between the surface of the step 207 and the mount 2021 of the light transmission unit, and the second adhesive layer 2052 is located between the sidewall of the step 207 and the sidewall of the light transmission unit 202 . The above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, which also forms an "L"-shaped structure, forming a wrapping effect on the light-transmitting unit, thereby greatly improving the adhesion between the light-transmitting unit and the substrate Robustness and airtightness of the device.

Embodiment Eleven

This embodiment also provides an LED light-emitting device, and the similarities with Embodiment 10 will not be repeated, and the difference lies in:

As shown in Figure 31, in this embodiment, the second adhesive layer 2052 of the LED lighting device 200-6 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202, and is also formed on the side wall of the bracket side wall 2010. part on the upper surface. The first bonding layer 2051 and the second bonding layer 2052 form a continuous structure, which also forms a "Z"-shaped structure. Compared with the LED lighting device 200-5 of the tenth embodiment, the LED lighting device 200-5 of this embodiment 6, the contact area between the second adhesive layer and the substrate 201 and the light-transmitting unit 202 is increased, thereby further increasing the firmness of the connection between the substrate and the light-transmitting unit, and further improving the airtightness of the device.

Embodiment 12

This embodiment also provides an LED lighting device, and the similarities with the eleventh embodiment will not be described again, and the difference lies in:

As shown in Figure 32, in this embodiment, the second adhesive layer 2052 of the LED lighting device 200-7 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202, and is also formed on the side wall of the bracket side wall 2010. All on the surface. The above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, which also forms a "Z"-shaped structure. Compared with the LED lighting device 200-6 of the eleventh embodiment, the LED lighting device 200 of this embodiment In -7, the contact area between the second adhesive layer and the substrate 201 and the light-transmitting unit 202 is further increased, thereby further increasing the firmness of the connection between the substrate and the light-transmitting unit, and further improving the airtightness of the device.

Embodiment Thirteen

This embodiment also provides an LED light-emitting device, and the similarities with Embodiment 12 will not be repeated, and the difference lies in:

As shown in FIG. 33 , in this embodiment, the second adhesive layer 2052 of the LED lighting device 200-8 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202, and is also formed on the side wall of the bracket side wall 2010. On the entire upper surface, and in the light emitting direction of the LED lighting device, the upper surface of the second bonding layer 2052 is flush with the upper surface of the light-transmitting unit 202 . It can be understood that the upper surface of the second adhesive layer is slightly higher than the upper surface of the light-transmissive unit 202, and the second adhesive layer is formed on the upper surface of part of the light-transmissive unit, specifically, formed on the mounting base. On the surface. The above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, which also forms a "Z"-shaped structure. Compared with the LED lighting device 200-7 of the eleventh embodiment, the LED lighting device 200 of this embodiment In -7, the upper surface of the second bonding layer is flush with the upper surface of the light-transmitting unit, forming a package for the entire side wall of the light-transmitting unit; or, the second bonding layer can be formed on part of the upper surface of the light-transmitting unit On, wrapping the light-transmitting unit. The LED light-emitting device of this embodiment further increases the contact area between the second adhesive layer and the substrate 201 and the light-transmitting unit 202, thereby further increasing the firmness of the connection between the substrate and the light-transmitting unit, and further improving the air permeability of the device. Tightness.

As mentioned above, the LED lighting device and its manufacturing method provided by the present invention have at least the following beneficial technical effects:

The LED light-emitting device of the present invention includes: a substrate, an LED chip arranged in a functional area of the substrate, a light-transmitting unit covering the substrate and covering the LED chip, and an adhesive material layer connecting the substrate and the light-transmitting unit. In the light emitting direction of the LED chip, the side wall of the LED light emitting device of the present invention is flush on the whole, which is conducive to a better positioning of the product in the braided vibrating plate, and better improves the packaging yield. The first part of the adhesive layer is uniformly and completely filled between the metal strip and the lens unit without air bubbles or gaps, which can significantly increase the airtightness of the device. In addition, the second part formed on at least part of the substrate outside the metal strip can further prevent water vapor from entering the device, especially when the second part fills the gap between the substrate outside the metal strip and the light-transmitting unit, it can Further improve the airtightness of the device.

In another embodiment of the present invention, in the LED light-emitting device, the bonding material layer between the substrate and the light-transmitting unit includes: a second layer above the substrate located outside the functional area on the first surface of the substrate An adhesive layer, and a second adhesive layer located on the side wall of the light-transmitting unit, the adhesive material layer forms a continuous structure in the LED lighting device. The above-mentioned bonding material forms an "L"-shaped structure as a whole, and the bonding material of this structure can fully bond the substrate and the light-transmitting unit, enhance the bonding force between the two, and improve the reliability of the product. At the same time, the adhesive material layer fully fills the gap between the substrate and the light-transmitting unit, and is also formed on the side wall of the light-transmitting unit, effectively improving the sealing between the substrate and the light-transmitting unit, and improving the airtightness of the product and reliability.

In addition, the above adhesive material layer in the light-emitting device of the present invention may also include a third adhesive layer formed on at least part of the side wall of the substrate, for example, steps are formed on the side wall of the substrate, and the third adhesive layer forms on the surface and side walls of the step. The adhesive material layer including the third adhesive layer forms a continuous structure similar to a "T" or "Z". The structure forms a cladding structure between and around the substrate and the light-transmitting unit, which can further improve the airtightness and reliability of the product.

Further, the above-mentioned bonding material layer may also include a fourth bonding layer formed on part of the upper surface of the light-transmitting unit, specifically, the fourth bonding layer is formed on at least part of the upper surface of the mounting seat of the light-transmitting unit , thereby further increasing the bonding area of the bonding material, increasing the bonding force between the light-transmitting unit and the substrate, and further enhancing the airtightness and reliability of the product.

The above-mentioned adhesive material layer preferably has one or more of the following characteristics: good adhesion, certain fluidity, and certain reflection effect on the light emitted by the LED chip. For example, silica gel, white glue, fluororesin, etc. can be selected. In this way, while improving the airtightness of the product, the light emitting effect of the product can also be improved.

The manufacturing method of the light-emitting device of the present invention may adopt the method of covering the whole substrate with a whole piece of quartz glass plate containing a plurality of light-transmitting units, or adopt a plurality of independent light-transmitting units formed of quartz glass to be bonded to the whole piece. way on the substrate. First, the entire quartz glass plate or the independent light-transmitting unit and the substrate are positioned through the corresponding positioning parts on each fixture to ensure that the light-transmitting area of the light-transmitting unit coincides with the center of the LED chip on the substrate. This process It can effectively improve the deviation of the quartz glass plate or the light-transmitting unit, and avoid the deviation of the central light-emitting angle of the LED chip; the mounting seat of the light-transmitting unit is aligned with the area outside the functional area coated with the first bonding layer on the substrate, The quartz glass is brought into contact with the first adhesive layer on the substrate and pressed in a lamination device with vacuum to realize the close bonding of the two. Further, a first groove can be formed between the light-transmitting units, and an adhesive material can be filled in the first groove so that it fills the first groove to form a second adhesive layer. The adhesive layer is cut to obtain a light-emitting device, thereby forming a light-emitting device including an "L"-like structure of the adhesive material layer. The method can ensure the airtightness and reliability of the light emitting device, and the whole process can effectively improve the deviation of the quartz glass. In the above manufacturing method, while forming the first groove, part of the substrate is cut along the first groove, a second groove is formed on the first substrate, and the third bonding layer is formed in the second groove. In this way, the above-mentioned "T"-shaped adhesive material layer is formed, which further improves the airtightness and reliability of the device.

The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims (28)

1. An LED lighting device, comprising:

the substrate is provided with a first surface and a second surface which are oppositely arranged, and a functional area is formed on the first surface of the substrate;

the LED chip is fixed on the functional area on the first surface of the substrate;

a light transmitting unit which is made of quartz glass, is disposed above the first surface of the substrate, and covers the LED chip;

an adhesive material layer connecting the substrate and the light transmitting unit, the adhesive material layer including: the first bonding layer is positioned on the substrate outside the functional region on the first surface of the substrate, the second bonding layer is positioned on the side wall of the light transmitting unit and between the light transmitting unit and the substrate, and the second bonding layer and the first bonding layer between the light transmitting unit and the substrate form a continuous structure.

2. The LED luminescent device of claim 1, wherein the adhesive material layer further comprises a third adhesive layer formed on at least a portion of the sidewalls of the substrate.

3. The LED lighting device of claim 2, wherein the substrate is a planar substrate, the first surface of the substrate is provided with a metal plating layer higher than the first surface, the metal plating layer is formed on the functional region and the substrate outside the functional region, and the metal plating layer forms a metal strip surrounding the functional region on the substrate outside the functional region, and the metal strip is spaced from the functional region.

4. The LED light-emitting device according to claim 3, wherein the substrate is formed with a step in a peripheral region outside the functional region, and the third adhesive layer is formed on a surface and a sidewall of the step.

5. The LED light emitting device according to claim 1, wherein the first adhesive layer has a thickness of 35 to 150 μm in a light emission direction of the LED chip.

6. The LED light-emitting device according to claim 5, wherein the thickness of the second adhesive layer on the side wall of the light-transmitting unit in the light-emitting direction of the LED chip is 200 μm to 400 μm.

7. The LED lighting device of claim 3, wherein the first adhesive layer comprises a first portion over the metal strip outside the functional region and a second portion over at least a portion of the substrate outside the metal strip, the second portion being formed by a portion of the second adhesive layer between the light-transmissive unit and the substrate.

8. The LED light emitting device according to claim 7, wherein the first portion of the first adhesive layer has a thickness of 35 to 50 μm and the second portion has a thickness of 50 to 150 μm in a light emission direction of the LED chip.

9. The LED light-emitting device according to claim 4, wherein the thickness of the third adhesive layer is 1/3 or more and less than or equal to the thickness of the substrate in the light-emitting direction of the LED chip.

10. The LED lighting device according to claim 3, wherein the light-transmitting unit is a lens structure including a convex lens and a mount formed around the convex lens, wherein,

a cavity is formed between the mounting seat and the convex lens, and the lens structure is connected to the substrate through the mounting seat;

the LED chip is located in the cavity.

11. The LED luminescent device according to claim 10, wherein the convex lens is a hemispherical convex lens, and a spherical center of the convex lens is located between an upper surface of the LED chip and an inner surface of the convex lens.

12. The LED lighting device according to claim 10, wherein the convex lens is a semi-ellipsoidal convex lens in a long axis direction, and a spherical center of the convex lens is located between an upper surface of the LED chip and an inner surface of the convex lens.

13. The LED lighting device according to claim 12, wherein a vertical distance between a highest point and a lowest surface of the lens structure is 3.00-3.50 mm, a height of the mounting seat of the lens structure is 0.30-0.70 mm, and a maximum width of the convex lens is 2.00-3.50 mm.

14. The LED luminescent device of claim 1, wherein the adhesive material layer further comprises a fourth adhesive layer covering a portion of the upper surface of the light transmissive unit.

15. A manufacturing method of an LED light-emitting device is characterized by comprising the following steps:

providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, functional areas are formed on the first surface, and cutting areas are formed between the adjacent functional areas;

providing an LED chip and fixing the LED chip on the functional area on the first surface of the substrate;

covering a light-transmitting plate on the substrate, connecting the light-transmitting plate to the substrate through a first bonding layer on the substrate outside the functional area, covering the LED chip with the light-transmitting plate, wherein the light-transmitting plate is made of quartz glass;

forming a first trench over the cutting region;

forming a second bonding layer in the first groove, wherein the second bonding layer is also formed between the light-transmitting plate and the substrate to form a continuous structure with the first bonding layer;

and cutting the light-transmitting plate and the substrate for the second time along the second bonding layer aligned with the cutting area of the substrate until the substrate is cut through to form the LED light-emitting device.

16. The manufacturing method according to claim 15, wherein a depth of the first trench is 35 μm or more.

17. The manufacturing method according to claim 15, wherein the substrate is a planar substrate, wherein a metal plating layer is provided on the first surface of the substrate, the metal plating layer forming the functional region and a metal strip on a portion of the substrate outside the functional region, the metal strip surrounding the functional region and being spaced apart from the functional region, and a groove is formed between adjacent metal strips.

18. The method of manufacturing of claim 17, wherein the step of covering the substrate with a light-transmitting plate further comprises the steps of:

providing quartz glass comprising a plurality of light transmitting units, wherein each light transmitting unit comprises a mounting seat positioned on the periphery of the light transmitting unit and a light transmitting area positioned in the middle of the mounting seat;

forming a first bonding layer over the substrate outside the functional region;

attaching the quartz glass to the substrate, so that part of the first bonding layer is formed above the metal strip, the mounting seat of each light-transmitting unit is connected to the substrate through the first bonding layer, and the light-transmitting area of each light-transmitting unit of the quartz glass corresponds to the LED chips one to one.

19. The method of manufacturing of claim 17, wherein covering the substrate with a light-transmissive plate further comprises:

providing a plurality of independent light-transmitting units formed by quartz glass, wherein each light-transmitting unit comprises a mounting seat positioned at the periphery of the light-transmitting unit and a light-transmitting area positioned in the middle of the mounting seat;

forming a first bonding layer over the substrate outside the functional region;

attaching a plurality of light transmission units to the substrate, wherein the mounting seat of each light transmission unit is connected to the substrate through the first bonding layer, the light transmission area of each light transmission unit is in one-to-one correspondence with the LED chip, and the mounting seat of the adjacent light transmission unit forms the first groove.

20. The manufacturing method according to claim 18 or 19, wherein the light transmitting unit is formed as a lens structure in which the light transmitting region is a convex lens.

21. A manufacturing method according to claim 18 or 19, wherein the first adhesive layer comprises a first portion formed on the metal strip and a second portion formed in the groove, the second portion being formed by a portion of the second adhesive layer formed between the light-transmitting plate and the substrate, the first portion having a thickness of 35 μm to 50 μm, and the second portion having a thickness of 50 μm to 150 μm.

22. The method of manufacturing of claim 18, wherein forming a first trench over the cutting region comprises: and cutting the quartz glass for the first time to cut through the quartz glass to separate the adjacent light-transmitting units at intervals to form the first groove.

23. The method of manufacturing of claim 22, wherein performing a first cut further comprises: and after adjacent light-transmitting units are spaced, at least part of the substrate is continuously cut to form a second groove in the substrate.

24. The method of manufacturing of claim 19, wherein after forming the first trench, further comprising performing a first cut to cut at least a portion of the substrate to form a second trench in the substrate.

25. The manufacturing method according to claim 23 or 24, further comprising forming a third bonding layer in the second trench.

26. The manufacturing method according to claim 22, wherein a cutting width of the second cutting is smaller than a cutting width of the first cutting in a direction perpendicular to a light-emitting direction of the LED chip.

27. The manufacturing method of claim 25, wherein the thickness of the third adhesive layer is greater than or equal to 1/3 of the thickness of the substrate and less than or equal to the thickness of the substrate along the light emitting direction of the LED chip.

28. The manufacturing method according to claim 18 or 19, further comprising: and forming a fourth bonding layer on part of the upper surface of the light-transmitting unit, wherein the fourth bonding layer and the second bonding layer form a continuous structure.

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