CN112144038B - GaAs-based epitaxial doping source supply system for MOCVD equipment - Google Patents
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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Abstract
The invention relates to the technical field of metal organic chemical vapor deposition equipment, in particular to a GaAs-based epitaxial doping source supply system for MOCVD equipment, which aims to solve the problems that the quality of produced products cannot be guaranteed and the production cost is increased due to the fact that a doping source is used out or needs to be replaced when not used in the actual production process, and the invention has the technical points that a plurality of kinds of carrier gas and doping sources are supplied to input and output circulation pipelines for adjusting the obtained gas, at least two MOCVD equipment connected with the circulation pipelines, and a control subsystem, wherein the carrier gas and the doping sources are mixed and diluted to output the adjusted obtained gas with real-time index data conforming to index target data; the control subsystem includes a digital sensor; an actuator; and the control end is in communication connection with the digital sensor, compares the index real-time data detected by the digital sensor with corresponding index target data and controls the action of the executive component.
Description
Technical Field
The invention relates to the technical field of metal organic chemical vapor deposition equipment, in particular to a GaAs-based epitaxial doping source supply system for metal organic chemical vapor deposition equipment, which is particularly suitable for MOCVD equipment systems for growing GaAs-based related materials of LEDs and LDs, and can be used in all semiconductor material growth equipment such as CVD equipment, HVPE equipment, MBE equipment and the like which use doping sources.
Background
Metalorganic chemical vapor deposition (MOCVD) equipment is widely used in research and development and production of red-yellow light emitting diodes, laser diodes, and single-junction or multi-junction solar cells, and in mass production. MOCVD equipment generally adopts low-pressure (10-200 mbar pressure) growth, because the low-pressure MOCVD is an unbalanced growth technology, the thin-layer single crystal materials of various III-V compound semiconductors and multiple solid solutions thereof are prepared by performing vapor phase epitaxial growth on a substrate in a thermal decomposition reaction mode by taking hydrogen or nitrogen as carrier gas and depending on the pumping force of a vacuum pump.
The doping source is also called III metal organic source, is an important raw material for MOCVD growthOne, mainly comprising TMGa, TMAl, TMIn, cp 2 Mg, DEZn, etc., these metal organic sources generally have high purity (6N), inflammable, explosive, and toxic properties, so that the dopant sources have high requirements for preparation, filling, sealing, transportation, and use, and are very expensive. TMGa, TMAl, TMIn is an epitaxial source, and the molar flow rate of the reaction chamber injected in the growth process directly influences the growth rate of the epitaxial layer film; cp 2 Mg and DEZn are doping sources, and the molar flow rate of the reaction chamber injected in the growth process directly affects the doping concentration of the epitaxial layer film growth, and are a very critical ring in the parameter control of epitaxial growth materials.
In MOCVD systems, there is a very special run/vent switching loop design, because the saturation vapor pressure or molar flow of each doping source needs a certain time to stabilize, and the reactive doping source must be able to switch between the two lines rapidly and smoothly in order to meet the requirements of abrupt heterostructures or abrupt doping during thin film growth. When the device works, the doping source which firstly participates in the reaction is firstly conveyed to the change-over switch by carrier gas to be in a preparation state, firstly emptied through the vent pipeline, and quickly switched into the run pipeline to enter the reaction cavity when required after the molar flow of the doping source is stable, so that the molar flow of the doping source can be accurately controlled, and the quality of a growing film is effectively improved.
Taking Aixtron2600G3 grown GaAs-based LED material as an example, the dosage of each run of doping source is usually 0.003G-0.005G according to different performance requirements of target products. The minimum packaging amount of the doping source of a single bottle is 50g, 6run are grown per day according to a single MOCVD device, 25 days are grown per month, 9g (0.005 g/run 6 run/day 25 days/month 12 months/year=9 g/year) can be used up for full year, namely, at least five years can use up one bottle of doping source. However, the quality guarantee period of the doping source is usually two years, so that the problem that the doping source is used out or needs to be replaced when not used in the actual production process exists, and the quality of the produced product cannot be guaranteed and the production cost is increased.
Disclosure of Invention
Therefore, the invention aims to overcome the defects that the quality of the produced product cannot be ensured and the production cost is increased because the doping source is used out of date or needs to be replaced when not used in the actual production process, thereby providing the GaAs-based epitaxial doping source supply system for MOCVD equipment.
The technical aim of the invention is realized by the following technical scheme:
a GaAs based epitaxial dopant source feed system for a MOCVD tool, comprising:
the system comprises a circulation pipeline for inputting and outputting the gas obtained by adjustment, at least two MOCVD equipment connected with the circulation pipeline, and a control subsystem, wherein the carrier gas and the doping source are mixed and diluted to output the gas obtained by adjustment, the index real-time data of which accords with the index target data;
the index real-time data comprise gas flow data of a doping source carrier gas, saturated steam pressure data of the doping source at a set temperature and pressure data in a doping source container, and the index target data comprise target parameter data corresponding to each index real-time data;
the control subsystem includes:
at least one group of digital sensors which are arranged on the flow pipeline and used for detecting the index real-time data of the gas obtained by the adjustment;
an execution piece which is arranged on the flow pipeline and controls the flow state of the flow pipeline;
and the control end is in communication connection with the digital sensor, compares the index real-time data detected by the digital sensor with corresponding index target data, and controls the action of the executive component so as to output the gas of which the index real-time data accords with the adjustment of the index target data.
Optionally, the flow-through line comprises:
a doping source;
the first carrier gas inlet pipe and the second carrier gas inlet pipe are connected with the doping source;
the output pipeline comprises a circulating output pipe which is communicated with the first carrier gas inlet pipe and the second carrier gas inlet pipe to output the gas obtained by adjustment of which the index real-time data does not accord with the index target data, and a qualified output pipe which is communicated with the second carrier gas inlet pipe and the MOCVD equipment to output the gas obtained by adjustment of which the index real-time data accords with the index target data.
Optionally, the executing piece includes:
a pressure controller disposed on the doping source;
an inlet valve and an initial mass flow controller arranged on the first carrier gas inlet pipe;
the air outlet valve and the doping mass flow controller are arranged on the second carrier gas inlet pipe;
and the bypass valve is arranged on the circulating output pipe.
Optionally, the control end comprises at least one personal computer and at least one programmable logic controller for performing data storage by adopting a stack algorithm;
the programmable logic controller is used for storing the index target data and controlling the executive component to act;
the personal computer is in communication connection with the programmable logic controller and is used for realizing data synchronization.
Optionally, the control end and the digital sensor perform mutual checking of working states through interaction of handshake signals.
Optionally, the personal computer and the programmable logic controller perform mutual checking of working states through interaction of heartbeat signals.
Optionally, the programmable logic controller also stores normal working parameters and/or working life information of each component in the GaAs-based epitaxial doping source supply system of the MOCVD equipment, and judges whether the component needs replacement or maintenance according to the normal working parameters and/or working life information of each component, if so, local and/or remote warning is performed.
Optionally, the programmable logic controller stores ID information and calibration data of the digital sensor, and the programmable logic controller identifies the digital sensor based on the ID information of the digital sensor and adjusts parameters of the digital sensor according to the calibration data of the digital sensor.
The technical scheme of the invention has the following advantages:
1. the doping source is a very key ring in an MOCVD gas path control system because the doping source injection molar flow rate of the MOCVD equipment directly affects the doping type and the carrier concentration of an epitaxial layer film, the doping source is supplied by adopting a double dilution pipeline due to small consumption, the doping source injection molar flow rate is controlled by controlling the carrier gas flow rate, the external temperature and the outlet pressure of a circulating pipeline, and meanwhile, the doping source is connected with a plurality of MOCVD equipment by adopting a single bottle in a targeted manner, so that the problem that the doping source is out of date or needs to be replaced when not being used is thoroughly solved.
2. According to the GaAs-based epitaxial doping source supply system for MOCVD equipment, the control end enables the air inlet valve and the air outlet valve to be in a normally open state, the bypass valve is in a closed state, carrier gas flowing through the first carrier gas inlet pipe enters the doping source through the air inlet valve, the doping source is carried out, and is mixed and diluted after being converged with carrier gas flowing through the second carrier gas inlet pipe, the process monitors gas flow data of the carrier gas of the doping source, saturated steam pressure data of the doping source at a set temperature and pressure data in a doping source container in real time through the digital sensor, so that an initial mass flow controller and a doping mass flow controller are accurately regulated, and if the obtained gas is not qualified, the bypass valve is opened to enable the obtained gas to flow into the circulating output pipe to be mixed again, and accurate control of the injection molar flow of the doping source is achieved; if the gas obtained by the adjustment is qualified, the gas is introduced into the MOCVD equipment through a qualified output pipe to be supplied.
3. According to the GaAs-based epitaxial doping source supply system for the MOCVD equipment, the working states are mutually checked between the control end and the digital sensor through interaction of handshake signals, so that the stability of the system is improved.
4. According to the GaAs-based epitaxial doping source supply system for the MOCVD equipment, the personal computer and the programmable logic controller are subjected to mutual detection of working states through interaction of heartbeat signals, so that information loss is effectively prevented.
5. The GaAs-based epitaxial doping source supply system for the MOCVD equipment stores the normal working parameters and/or the service life information of each component in the programmable logic controller, thereby realizing the prejudgement of the system.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a GaAs-based epitaxial dopant source supply system for an MOCVD apparatus according to an embodiment of the present invention;
fig. 2 is a schematic block diagram of a GaAs based epitaxial dopant source supply system for a MOCVD tool according to one embodiment of the present invention.
Reference numerals illustrate:
11. a doping source; 12. a first carrier gas inlet pipe; 13. a second carrier gas inlet pipe; 14. a circulating output pipe; 15. qualified output pipe; 21. digitizing the sensor; 22. an actuator; 221. a pressure controller; 222. an air inlet valve; 223. an initial mass flow controller; 224. an air outlet valve; 225. a doping mass flow controller; 226. a bypass valve; 23. a control end; 231. a personal computer; 232. a programmable logic controller; 233. a logic control unit; 234. a database; 235. and an alarm unit.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The GaAs-based epitaxial doping source supply system for the MOCVD equipment comprises a circulation pipeline for inputting and outputting the gas obtained by adjustment for the carrier gas and the doping source, at least two MOCVD equipment connected with the circulation pipeline, and a control subsystem, wherein the carrier gas and the doping source are mixed and diluted to output the gas obtained by adjustment, the index real-time data of which accords with the index target data; the index real-time data comprise gas flow data of a doping source carrier gas, saturated steam pressure data of the doping source at a set temperature and pressure data in a doping source container, and the index target data comprise target parameter data corresponding to each index real-time data. The control of the doping source injection molar flow rate of the MOCVD equipment directly influences the doping type and the carrier concentration of the epitaxial layer film, so that the MOCVD equipment is a very key ring in an MOCVD gas circuit control system. The doping source is supplied by adopting the double-dilution pipeline because of small dosage, and the injection molar flow of the doping source is controlled by controlling the carrier gas flow, the external temperature and the outlet pressure of the circulation pipeline. The method is particularly suitable for MOCVD equipment system for growing GaAs-based related materials of LEDs and LDs, and can be used in all semiconductor material growing equipment such as CVD equipment, HVPE equipment, MBE equipment and the like which use doping sources.
The injection amount of the doping source from the circulation pipeline to the MOCVD equipment is determined by the following conditions: 1. gas flow rate of dopant source carrier gas; 2. saturated vapor pressure of the doping source at a set temperature; 3. absolute pressure within the dopant source vessel. The double dilution line feed expression is as follows:
N MO =[(Fsource*Finject/(Fsource+Fdilute)]*[P MO /(P bub –P MO )]/Vm
wherein N is MO Is doping source molar flow (mol/min); p (P) MO Is the saturation of the doping sourceSteam pressure; p (P) bub Is the absolute pressure in the stainless steel cylinder of the doping source; fsource is the flow (sccm) of carrier gas into the doping source stainless steel cylinder, controlled by the MFC at the doping source inlet; fdilute is the diluted carrier gas flow at the outlet of the doping source stainless steel cylinder and is controlled by the MFC at the outlet of the doping source; finject is the doping source flow (sccm) into the MOCVD apparatus, controlled by the MFC at the doping source outlet and at the MOCVD apparatus; vm is the molar gas constant, equal to 22414 (cm 3 /mol）。
Specifically, as shown in fig. 1 and 2, the control subsystem includes at least one set of digital sensors 21 disposed on the flow pipeline for detecting real-time data of the index of the gas obtained by the adjustment; an actuator 22 provided on the flow pipeline and controlling the flow state of the flow pipeline; and a control end 23 which is in communication connection with the digital sensor 21, compares the index real-time data detected by the digital sensor 21 with the corresponding index target data, and controls the action of the executing piece 22 so as to output the gas of which the index real-time data accords with the adjustment of the index target data.
As shown in fig. 1, the flow-through line includes a dopant source 11; a first carrier gas inlet pipe 12 and a second carrier gas inlet pipe 13 connected to the doping source 11; the output pipeline comprises a circulating output pipe 14 which is communicated with the first carrier gas inlet pipe 12 and the second carrier gas inlet pipe 13 to output the gas with the index real-time data which does not accord with the index target data and a qualified output pipe 15 which is communicated with the second carrier gas inlet pipe 13 and the MOCVD equipment to output the gas with the index real-time data which accords with the index target data. The actuator 22 includes a pressure controller 221 disposed on the dopant source 11; an inlet valve 222 and an initial mass flow controller 223 provided on the first carrier gas inlet pipe 12; an outlet valve 224 and a doped mass flow controller 225 disposed on the second carrier gas inlet conduit 13; a bypass valve 226 disposed on the recirculation output line 14. In this embodiment of the present invention, the doping source 11 is one of Cp2Mg or DEZn, the doping source 11 is stored in a steel bottle and placed in a thermostatic water bath, when the doping source is in a process growth mode, the control end 23 makes the air inlet valve 222 and the air outlet valve 224 in a normally open state, the bypass valve 226 in a closed state, the carrier gas flowing through the first carrier gas inlet pipe 12 enters the doping source 11 through the air inlet valve 222, carries the doping source out, and mixes and dilutes the carrier gas after merging with the carrier gas flowing through the second carrier gas inlet pipe 13, the process monitors the gas flow data of the carrier gas of the doping source, the saturated steam pressure data of the doping source at a set temperature and the pressure data in the doping source container in real time by the digital sensor 21, so as to accurately regulate and control the pressure controller 221, the initial mass flow controller 223 and the doping mass flow controller 225, if the obtained gas is not qualified, the bypass valve 226 is opened to enable the carrier gas to flow into the circulation output pipe 14 to be mixed again, and the accurate control of the injection molar flow of the doping source is realized; if the gas obtained by the adjustment is acceptable, the gas is introduced into the MOCVD equipment through the acceptable outlet pipe 15 to be supplied.
As shown in fig. 2, the control end 23 is connected to the digital sensor 21 and the actuator 22, and the control end 23 includes: at least one personal computer 231 and at least one programmable logic controller 232 corresponding to the personal computer 231, each of the digital sensors 21 is connected to the personal computer 231 and the programmable logic controller 232, respectively, and each of the actuators 22 is connected to the programmable logic controller 232. The programmable logic controller 232 is provided with a database 234, the personal computer 231 is provided with a visual operation interface, the personal computer 231 is in communication connection with the programmable logic controller 232, so that an operator can control the programmable logic controller 232 through the personal computer 231, and meanwhile, data synchronization between the personal computer 231 and the programmable logic controller 232 is realized, however, in the embodiment, the database 234 of the programmable logic controller 232 stores smaller data, so that a stack algorithm is adopted to temporarily store data, the personal computer 231 stores larger data, the programmable logic controller 232 receives new preset information and then synchronizes to the personal computer 231 to store the new data, so that data loss is prevented, and repeated coverage of the data is realized, namely, if the latest data comes to be covered and replaced, the iteration of the data is realized.
As shown in fig. 2, the programmable logic controller 232 further includes a logic control unit 233 and an alarm unit 235, and the database 234 and the alarm unit 235 are connected to the logic control unit 233. Meanwhile, each digital sensor 21 feeds back the detected index real-time data to the programmable logic controller 232, and the logic control unit 233 selects corresponding index target data from the database 234 according to the feedback information of each digital sensor 21, sends the corresponding index target data to the logic control unit 233 for comparison and judgment, and controls each executing piece 22 to act according to the judgment result. The database 234 of the programmable logic controller 232 stores normal working parameters and/or working life information of each component in the GaAs-based epitaxial doping source supply system of the MOCVD equipment, and can judge whether the component needs to be replaced or maintained according to the normal working parameters and/or working life information of each component, if so, the alarm unit 235 is controlled to perform local warning, thereby realizing the function of prejudging the working state of each component, reminding the replacement or maintenance of the worker in advance, preventing the occurrence of faults and improving the working efficiency.
As shown in fig. 2, in order to improve the stability of the system, in this embodiment of the present invention, the control end 23 and the digital sensor 21 perform mutual checking of working states through interaction of handshake signals, a signal is given to the digital sensor 21 at each start of the control end 23, the digital sensor 21 feeds back a signal to the control end 23, the feedback signal includes ID information of each digital sensor 21, the control end 23 compares and determines the fed back signal with corresponding ID information in the database 234, and when there is a problem in the digital sensor 21 or when some symptoms need to be processed but normal operation is not affected temporarily, and when the change of the sensor is within an error range, indication information of refusal of use, warning or normal activation is made.
As shown in fig. 2, in order to prevent information loss, in this embodiment of the present invention, the personal computer 231 and the programmable logic controller 232 perform mutual checking of the operation states through the interaction of the heartbeat signals. That is, when the programmable logic controller 232 and the personal computer 231 do not receive the signals from each other within the preset time, it is determined that the personal computer 231 or the programmable logic controller 232 is down, and when one of the personal computer 231 or the programmable logic controller 232 is down, the system stops running, and the personal computer 231 or the programmable logic controller 232 in the down state is restarted, or the system continues to run, but the data is directly stored into the personal computer 231 or the programmable logic controller 232 which normally works, and after the down side is restarted, the data is transmitted to the down side. Wherein, the preset time for judging whether the personal computer 231 or the programmable logic controller 232 is normal is not more than 1 minute.
As shown in fig. 2, each of the digital sensors 21 has ID information of a fixed model, a rated load, an allowable use load, a limit load, a sensitivity, and the like, the programmable logic controller 232 stores the ID information of each of the digital sensors 21 in the database 234, when the digital sensor 21 is replaced or the system is restarted, the digital sensor 21 transmits the ID information to the programmable logic controller 232, the logic control unit 233 compares the ID information of each of the digital sensors 21 in the system with the reference ID information stored in the database 234, detects whether the digital sensor 21 is legal or valid, and if the ID information of the digital sensor 21 in the system is detected to be inconsistent with the reference ID information stored in the database 234, the alarm unit 235 is controlled to perform local warning, thereby realizing the identification of the digital sensor 21.
The working principle of the GaAs-based epitaxial doping source supply system for MOCVD equipment is as follows: the control end 23 enables the air inlet valve 222 and the air outlet valve 224 to be in a normally open state, the bypass valve 226 is in a closed state, the carrier gas flowing through the first carrier gas inlet pipe 12 enters the doping source 11 through the air inlet valve 222, carries the doping source out, and is mixed and diluted after being converged with the carrier gas flowing through the second carrier gas inlet pipe 13, the process monitors gas flow data of the carrier gas of the doping source, saturated steam pressure data of the doping source at a set temperature and pressure data in a doping source container in real time by the digital sensor 21, so that the pressure controller 221, the initial mass flow controller 223 and the doping mass flow controller 225 are accurately regulated, and if the obtained gas is not qualified, the bypass valve 226 is opened to enable the obtained gas to flow into the circulating output pipe 14 for remixing, and accurate control of the injection molar flow of the doping source is realized; if the gas obtained by the adjustment is acceptable, the gas is introduced into the MOCVD equipment through the acceptable outlet pipe 15 to be supplied.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (6)
1. A GaAs based epitaxial dopant source feed system for a MOCVD tool, comprising:
the system comprises a circulation pipeline for inputting and outputting the gas obtained by adjustment, MOCVD equipment connected with the circulation pipeline, and a control subsystem, wherein the carrier gas and the doping source are mixed and diluted to output the gas obtained by adjustment, the index real-time data of which accords with the index target data;
the index real-time data comprise gas flow data of a doping source carrier gas, saturated steam pressure data of the doping source at a set temperature and pressure data in a doping source container, and the index target data comprise target parameter data corresponding to each index real-time data;
the control subsystem includes:
at least one group of digital sensors (21) arranged on the flow pipeline and used for detecting the index real-time data of the gas obtained by the adjustment;
an actuator (22) provided on the flow pipeline and controlling the flow state of the flow pipeline;
the control end (23) is in communication connection with the digital sensor (21), compares the index real-time data detected by the digital sensor (21) with corresponding index target data, and controls the action of the executing piece (22) so as to output gas of which the index real-time data accords with the adjustment of the index target data;
the flow-through line comprises:
a doping source (11);
a first carrier gas inlet pipe (12) and a second carrier gas inlet pipe (13) which are connected with the doping source (11);
the output pipeline comprises a circulating output pipe (14) which is communicated with the first carrier gas inlet pipe (12) and the second carrier gas inlet pipe (13) to output the gas obtained by the adjustment of which the index real-time data does not accord with the index target data, and a qualified output pipe (15) which is communicated with the second carrier gas inlet pipe (13) and the MOCVD equipment to output the gas obtained by the adjustment of which the index real-time data accords with the index target data;
the actuator (22) comprises:
a pressure controller (221) provided on the doping source (11);
an inlet valve (222) and an initial mass flow controller (223) disposed on the first carrier gas inlet pipe (12);
an outlet valve (224) and a doped mass flow controller (225) arranged on the second carrier gas inlet pipe (13);
a bypass valve (226) provided in the circulation output pipe (14);
the digital sensor (21) monitors gas flow data of the doping source carrier gas, saturated steam pressure data of the doping source at a set temperature and pressure data in the doping source container in real time, so as to regulate and control the pressure controller (221), the initial mass flow controller (223) and the doping mass flow controller (225), and if the obtained gas is unqualified, a bypass valve (226) is opened to enable the gas to flow into the circulating output pipe (14) for remixing, and accurate control of the injection molar flow of the doping source is realized; if the gas obtained by adjustment is qualified, the gas is led into MOCVD equipment through a qualified output pipe (15) to realize supply;
the double dilution line feed expression is:
N MO =[(Fsource*Finject/(Fsource+Fdilute)]*[P MO /(P bub –P MO )]/V m ；
wherein N is MO The unit is mol/min for the mole flow of the doping source; p (P) MO Is the saturated vapor pressure of the dopant source; p (P) bub Is the absolute pressure within the dopant source vessel; fsource is the flow rate of carrier gas introduced into the doping source container, the unit is sccm, and the flow rate is controlled by the MFC at the inlet of the doping source; fdilute is the diluted carrier gas flow at the outlet of the doping source, the unit is sccm, and the carrier gas flow is controlled through the MFC at the outlet of the doping source container; finject is the flow of doping source entering the MOCVD equipment and is controlled by an MFC at the outlet of the doping source container and at the MOCVD equipment; v (V) m Is molar gas constant equal to 22414 cm 3 /mol。
2. The GaAs based epitaxial dopant source supply system for a MOCVD tool according to claim 1, wherein the control terminal (23) comprises at least one personal computer (231) and at least one programmable logic controller (232) for data storage using a stack algorithm;
the programmable logic controller (232) is used for storing the index target data, and meanwhile, the programmable logic controller (232) controls the executive component (22) to act;
the personal computer (231) is in communication connection with the programmable logic controller (232) for data synchronization.
3. A GaAs based epitaxial dopant source supply system for a MOCVD tool according to claim 2, characterized in that the control terminal (23) and the digitizing sensor (21) are mutually checked for working status by interaction of handshake signals.
4. A GaAs based epitaxial dopant source supply system for a MOCVD tool according to claim 2, wherein the personal computer (231) and the programmable logic controller (232) perform a mutual check of the working state by means of the interaction of heartbeat signals.
5. The GaAs-based epitaxial dopant source supply system for MOCVD equipment according to claim 2, wherein the programmable logic controller (232) further stores normal operating parameters and/or operating lifetime information for each component in the GaAs-based epitaxial dopant source supply system for MOCVD equipment, and determines whether the component needs replacement or maintenance according to the normal operating parameters and/or operating lifetime information, and if so, performs local and/or remote warning.
6. The GaAs based epitaxial doping source supply system for MOCVD equipment according to claim 2, wherein the programmable logic controller (232) stores ID information and calibration data of the digital sensor (21), the programmable logic controller (232) identifies the digital sensor (21) based on the ID information of the digital sensor (21), and adjusts parameters of the digital sensor (21) according to the calibration data of the digital sensor (21).
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