CN110942981A - Gluing method and semiconductor structure - Google Patents
Gluing method and semiconductor structure Download PDFInfo
- Publication number
- CN110942981A CN110942981A CN201911260228.3A CN201911260228A CN110942981A CN 110942981 A CN110942981 A CN 110942981A CN 201911260228 A CN201911260228 A CN 201911260228A CN 110942981 A CN110942981 A CN 110942981A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- photoresist
- layer
- modifier solution
- surface modifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention provides a gluing method and a semiconductor structure. In the glue coating method, a connecting layer is formed on the surface of a semiconductor substrate with hydrophilic surface, the connecting layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, and then photoresist is coated on the upper surface of the connecting layer with hydrophobic surface to form a photoresist layer. The molecules of the surface modifier solution for preparing the connecting layer comprise an inorganic end, so the molecules are easy to attach to the surface of a hydrophilic semiconductor substrate, and meanwhile, the molecules of the surface modifier solution also comprise an organic end, and when the photoresist is coated on the surface of the connecting layer, the components of the photoresist are mainly organic components, so that the film is easy to form on the surface of the connecting layer, and the utilization rate of the photoresist is improved. The semiconductor structure provided by the invention comprises the semiconductor substrate, the connecting layer and the photoresist layer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gluing method and a semiconductor structure.
Background
The photolithography process is a common process in the fabrication of semiconductor devices, and comprises coating a photoresist with a certain thickness on the surface of a semiconductor substrate (such as a silicon wafer), and performing exposure, development, etching, demolding and other processes to pattern the material on the surface of the substrate. Generally, the cleaning step performed on the surface of the semiconductor substrate before the photoresist is coated makes the surface hydrophilic, which is not favorable for coating of organic materials such as photoresist, and the direct fabrication of the photoresist layer on the hydrophilic surface of the semiconductor substrate causes the waste of the photoresist.
In order to enhance the adhesion of the photoresist to the surface of the hydrophilic semiconductor substrate, the surface of the substrate is often tackified prior to the application of the photoresist. At present, Hexamethyldisilazane (HMDS) is generally selected as a tackifier for tackifying silicon wafers, before photoresist is coated on a photoresist evening and developing machine, the tackifying treatment needs to be carried out through a separate tackifying unit, the tackifying unit comprises a vacuum cavity and a corresponding temperature and pressure control device, HMDS is introduced into the vacuum cavity in which the silicon wafers are placed, HMDS steam is formed and attached to the surfaces of the silicon wafers to form a tackifying layer under pressurizing and heating environments so as to enhance the viscosity of the surfaces of the silicon wafers, the tackifying process needs vacuum conditions and also needs pressurizing and heating, the manufacturing cost and the process complexity of equipment are increased, and the HMDS is high in toxicity, harmful to human bodies and expensive in price.
Disclosure of Invention
The invention aims to provide a gluing method, which aims to solve the problem that when a photoresist layer is formed on the surface of a hydrophilic semiconductor substrate, the photoresist is not easy to spread, so that the use amount is increased, and meanwhile, the thickening treatment is prevented from adopting vacuum, pressurizing and heating modes and the like, so that the process is simplified. The invention also provides a semiconductor structure.
In order to achieve the above object, the present invention provides a glue coating method, including:
providing a semiconductor substrate, wherein the surface of the semiconductor substrate has hydrophilicity;
forming a connection layer on the surface of the semiconductor substrate, wherein the connection layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, and the upper surface of the connection layer is a hydrophobic surface; and the number of the first and second groups,
and coating photoresist on the upper surface of the connecting layer to form a photoresist layer.
Optionally, the inorganic terminal is a silica terminal, and the organic terminal is an amino terminal.
Optionally, the surface modifier solution is formed from a silicone coupling agent and an organic solvent by a solvothermal method.
Optionally, the step of forming the surface modifier solution from the silicone coupling agent and the organic solvent by a solvothermal method comprises:
obtaining an organic solvent with the water content less than or equal to 1 Wt%;
mixing the organic solvent with the water content of less than or equal to 1 Wt% and the silica coupling agent according to a certain proportion to obtain a mixed solution;
injecting the mixed solution into a polytetrafluoroethylene hydrothermal kettle;
slowly heating to 80-180 ℃, wherein the heating rate is lower than 15 ℃/min;
preserving the heat for 1-24 h, cooling to room temperature, and taking out the solution after hydrothermal reaction as the surface modifier solution.
Optionally, the method for obtaining the organic solvent with the water content of less than or equal to 1 Wt% is to remove part of water from the organic solvent with the purity of AR or above by a distillation method.
Optionally, the organic solvent is at least one of acetone, absolute ethyl alcohol and toluene.
Optionally, the connection layer and the photoresist layer are formed by spin coating.
Optionally, the connection layer and the photoresist layer are manufactured by using the same spin coating equipment, wherein after the surface modifier solution is coated on the surface of the semiconductor substrate, the connection layer is formed by natural volatilization for 5-120 s, and then the photoresist is spin coated on the connection layer.
Optionally, the semiconductor substrate is a silicon wafer, and before the connection layer is formed, the semiconductor substrate is treated by a cleaning agent to obtain a hydrophilic surface.
The invention also provides a semiconductor structure, which comprises a semiconductor substrate, wherein the surface of the semiconductor substrate has hydrophilicity, a connecting layer is attached to the semiconductor substrate, the connecting layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, the upper surface of the connecting layer is a hydrophobic surface, and a photoresist layer is attached to the upper surface of the connecting layer.
The gluing method provided by the invention comprises the steps of firstly forming a connecting layer on the surface of a semiconductor substrate with hydrophilic surface, wherein the connecting layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, and then coating photoresist on the upper surface of the connecting layer with hydrophobic property to form a photoresist layer. The molecules of the surface modifier solution for preparing the connecting layer comprise an inorganic end, so the molecules are easy to attach to the surface of a hydrophilic semiconductor substrate, and meanwhile, the molecules of the surface modifier solution also comprise an organic end, and when the photoresist is coated on the surface of the connecting layer, the components of the photoresist are mainly organic components, so that the film is easy to form on the surface of the connecting layer, and the utilization rate of the photoresist is improved. Furthermore, the glue spreading method also comprises the step that the connecting layer and the photoresist layer can be formed into films by a spin coating method, so that the glue spreading method can also be manufactured by the same spin coating equipment without the conditions of vacuum, heating, pressurization and the like, the manufacturing is convenient, and the cost can be further saved.
The invention also provides a semiconductor structure, which comprises a semiconductor substrate, a connecting layer attached to the surface of the semiconductor substrate and a photoresist layer attached to the upper surface of the connecting layer, wherein the connecting layer and the photoresist layer can be prepared by the glue coating method, so that the semiconductor structure also has the same or similar technical effects as the glue coating method.
Drawings
Fig. 1a is a schematic view of a connection layer formed on a semiconductor substrate by a glue coating method according to an embodiment of the invention.
Fig. 1b is a schematic diagram of a semiconductor substrate after a connection layer is formed thereon by a glue spreading method according to an embodiment of the invention.
FIG. 1c is a schematic view of a photoresist layer formed on the connection layer by a glue spreading method according to an embodiment of the invention.
Description of reference numerals:
110-a silicon wafer;
120-surface modifier solution;
121-a tie layer;
130-a nozzle spraying a surface modifier solution;
131-a nozzle for spraying photoresist;
140-photoresist;
141-photoresist layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for convenience of description, only some structures related to the present invention are shown in the drawings, not all structures are shown in the drawings, and the purpose of the embodiments of the present invention is only for convenience and clarity.
An embodiment of the present invention relates to a glue application method, including:
providing a semiconductor substrate, wherein the surface of the semiconductor substrate has hydrophilicity;
forming a connection layer on the surface of the semiconductor substrate, wherein the connection layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, and the upper surface of the connection layer is a hydrophobic surface; and the number of the first and second groups,
and coating photoresist on the upper surface of the connecting layer to form a photoresist layer.
The molecules of the surface modifier solution for preparing the connecting layer comprise an inorganic end, so the molecules are easy to attach to the surface of a hydrophilic semiconductor substrate, meanwhile, the molecules of the surface modifier solution also comprise an organic end, and when the photoresist is coated on the upper surface of the connecting layer, the components of the photoresist are mainly organic components, so that the film is easy to form on the upper surface of the connecting layer with hydrophobicity, and the utilization rate of the photoresist is improved.
Alternatively, in this embodiment, the semiconductor substrate may be a silicon wafer, but in other embodiments, the semiconductor substrate may be a ceramic substrate, a glass-ceramic substrate, diamond, a resin substrate, a metal or metal-matrix composite material, or the like.
Optionally, in this embodiment, the molecules of the surface modifier solution may include an inorganic end which may be a siloxane end, and an organic end which may be an amino end. However, in other embodiments, the inorganic terminal may also be other functional groups such as hydroxyl group, and the organic terminal may also be other functional groups such as vinyl group or propenyl group, as long as the inorganic terminal in the molecules of the surface modifier solution has hydrophilic properties and the organic terminal has hydrophobic properties.
Further, since the silicone coupling agent has both a hydrophilic silicone end and a hydrophobic amino end in its molecule, the silicone coupling agent may be a preferred material for preparing the surface modifier solution. In this embodiment, the surface modifier solution may be formed from a silicone coupling agent and an organic solvent by a solvothermal method. The surface modifier solution prepared using the silicon-oxygen coupling agent as a raw material is easily coated on a silicon wafer having a hydrophilic surface, and the upper surface of the formed connection layer has hydrophobicity. Under the solvothermal condition, the density, viscosity, dispersion effect and the like of the organic solvent are greatly changed and mutually influenced, and the dissolving, dispersion and chemical reaction activity of the corresponding silica coupling agent are greatly improved, so that the surface modifier solution can be generated at a lower temperature. Specifically, in this embodiment, the step of forming the surface modifier solution by the solvothermal method using the silicon-oxygen coupling agent and the organic solvent includes:
obtaining an organic solvent with the water content less than or equal to 1 Wt%;
mixing an organic solvent with the water content of less than or equal to 1 Wt% and a silica coupling agent according to a certain proportion to obtain a mixed solution;
injecting the mixed solution into a polytetrafluoroethylene hydrothermal kettle;
slowly heating to 80-180 ℃, wherein the heating rate is lower than 15 ℃/min;
preserving the heat for 1-24 h, cooling to room temperature, and taking out the solution after hydrothermal reaction as the surface modifier solution.
When preparing the surface modifier solution, excessive moisture in the organic solvent is detrimental to the dissolution of the silicone coupling agent and affects the rate of formation of the connecting layer in the surface modifier solution. In this example, the organic solvent having a water content of 1 Wt% or less was obtained by removing a part of water from an organic solvent having a purity of AR or higher by distillation. However, in other embodiments, a person skilled in the art may use other methods such as adding an active agent to the organic solvent to absorb water to remove part of the water in the organic solvent, and may adjust the water content mass percentage of the organic solvent as needed.
After the preparation of the raw material silicone coupling agent and the organic solvent required for preparing the surface modifier solution is completed, the embodiment may further include mixing the organic solvent with the water content of less than or equal to 1 Wt% and the silicone coupling agent according to a certain ratio to obtain a mixed solution. Specifically, the silica coupling agent is added into an organic solvent with the water content less than or equal to 1 Wt%, and the mixture is stirred and mixed uniformly to obtain a mixed solution. In this embodiment, the volume percentage of the silicone coupling agent in the mixed solution is 1% to 50%. However, in other embodiments, one skilled in the art can adjust the proportion of the silicone coupling agent as desired.
After obtaining the mixed solution, this embodiment may further include injecting the mixed solution into a polytetrafluoroethylene hydrothermal kettle for heat treatment to form the surface modifier solution. Specifically, the treatment temperature of the mixed solution in a polytetrafluoroethylene hydrothermal kettle can be 80-180 ℃, the heating rate is less than 15 ℃/min, the heat preservation time can be 1-24 h, the mixed solution is cooled to room temperature, and the solution after hydrothermal treatment is taken out to serve as the surface modifier solution. In other embodiments, those skilled in the art may select other pressure reaction devices such as an infrared heating plate pressure reactor or a micro magnetic high pressure reactor, and may adjust the processing conditions of the mixed solution in the pressure reactor according to the actual situation as long as the surface modifier solution can be formed.
Optionally, in this embodiment, 3-aminopropyl trimethoxy siloxane (APTMS) may be used as the silica coupling agent, but in other embodiments, 3-aminopropyl triethoxy silane (APTES) may also be used as the silica coupling agent.
Alternatively, the organic solvent in this embodiment may be benzophenone. The benzophenone is a very volatile substance, and after a surface modifier solution prepared by mixing the benzophenone with a silica coupling agent is coated on the surface of a silicon wafer, the benzophenone is quickly volatilized to form a compact film, and the film is a connecting layer. In this embodiment, the organic solvent may be benzophenone, but in other embodiments, the organic solvent may be at least one of other organic solvents such as absolute ethanol and toluene, and the purity is preferably AR or more.
In order to achieve better adhesion of the surface modifier solution to the surface of the semiconductor substrate, the semiconductor substrate may be treated with a cleaning agent to obtain a hydrophilic surface before the formation of the connection layer. In this embodiment, the step of processing the semiconductor substrate by the cleaning agent may include cleaning the semiconductor substrate by deionized water and a mixture of hydrogen peroxide and ammonia, and then drying the semiconductor substrate. Specifically, in this embodiment, the cleaning time of the mixed solution of hydrogen peroxide and ammonia water may be 30s to 5min, the drying temperature may be 80 ℃ or lower, and the drying time may be 5min to 10 min. In other embodiments, one skilled in the art may choose not to perform the semiconductor substrate surface cleaning, and it should be noted that the adhesion of the surface modifier solution to the semiconductor substrate surface may be poor without performing the semiconductor substrate surface cleaning. Similarly, other surface cleaning solutions and other surface cleaning conditions may be selected by those skilled in the art, as long as a semiconductor substrate surface having hydrophilicity is obtained.
After the preparation of the surface modifier solution and the cleaning of the surface of the semiconductor substrate are completed, the present embodiment may further include applying the surface modifier solution to the surface of the semiconductor substrate to form the connection layer. Specifically, the connection layer and the photoresist layer can be formed into films by a spin coating method, and can be manufactured by the same spin coating equipment. The same spin coating equipment can be a glue spraying device on a glue homogenizing developing machine, the surface modifier solution is coated on the surface of the semiconductor substrate by means of the glue spraying device to form the connecting layer, other equipment and devices are not needed to be added, special conditions such as vacuum, heating, pressurization and the like are not needed, the operation is simple, and the cost can be reduced.
Fig. 1a is a schematic view of a connection layer formed on a semiconductor substrate by a glue coating method according to an embodiment of the invention.
Fig. 1b is a schematic diagram of a semiconductor substrate after a connection layer is formed thereon by a glue spreading method according to an embodiment of the invention.
Specifically, the prepared surface modifier solution is filled into a solvent bottle, as in the method of coating photoresist, as shown in fig. 1a, the surface modifier solution 120 is spin-coated on the surface of the silicon wafer 110 near the nozzle 130 through the nozzle 130 in the spin coating device of the spin coater, acetone in the surface modifier solution 120 is rapidly volatilized, and a dense surface modified film, i.e., a connection layer 121, is formed, as shown in fig. 1 b. Since the molecules of the surface modifier solution forming the connection layer may include an inorganic terminal (silicon oxygen terminal), the connection layer is stably attached to the surface of the semiconductor substrate, and the molecules of the surface modifier solution further include an organic terminal (amino terminal), so that the upper surface of the connection layer formed has hydrophobicity.
Optionally, in this embodiment, the ambient temperature for forming the connection layer may be 25 to 100 ℃, the ambient pressure may be 101KPa to 10MPa, after the surface modifier solution is coated on the surface of the silicon wafer, vacuum, heating, and pressurizing are not required, and waiting for 5 to 120 seconds, and after acetone is naturally volatilized to form the connection layer, the photoresist is coated. In other embodiments, the specific environmental conditions for forming the connection layer by the surface modification solution can be adjusted by one of ordinary skill in the art according to actual conditions.
In addition, in the embodiment, a reference example of the usage amount of the surface modifier solution is provided, the usage amount of the surface modifier solution can be 1-20 ml for a 55nm silicon wafer, and the rotation speed of the silicon wafer can be in the range of 500-6000 rpm. The use amount of the surface modifier solution is increased, and the thickness of the formed connecting layer is increased; the rotation speed of the silicon wafer is increased, and the thickness of the formed connection layer is reduced.
FIG. 1c is a schematic view of a photoresist layer formed on the connection layer by a glue spreading method according to an embodiment of the invention.
After forming the connection layer on the surface of the silicon wafer, the embodiment may further include applying a photoresist on the upper surface of the connection layer to form a photoresist layer. Specifically, as shown in fig. 1c, a photoresist layer 141 is formed by spin-coating a photoresist 140 on the upper surface of the connection layer 121 by using another nozzle 131 of the spin coater photoresist sprayer, i.e., a photoresist is coated on the surface of the connection layer 121 close to the nozzle 131. And the photoresist is coated on the upper surface of the silicon wafer with hydrophobic upper surface, and the photoresist is easy to be attached to the upper surface of the connecting layer, so that the utilization rate of the photoresist can be improved.
In the glue coating method, the connecting layer is formed on the surface of the semiconductor substrate with hydrophilic surface, the connecting layer is prepared from the surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, and then the photoresist is coated on the upper surface of the connecting layer with hydrophobic surface to form the photoresist layer. Since the molecules of the surface modifier solution forming the connection layer include an inorganic terminal, the surface modifier solution is easily attached to the surface of the hydrophilic semiconductor substrate, and the molecules of the surface modifier solution also have an organic terminal, so that the upper surface of the connection layer formed has hydrophobicity. The connection layer with the hydrophobic upper surface is generated on the surface of the semiconductor substrate, namely, the surface of the semiconductor substrate is prewetted, and the contact angle of the photoresist attached to the surface of the semiconductor substrate is larger than that of the photoresist attached to the upper surface of the connection layer, namely, the dispersibility and the adhesiveness of the photoresist on the upper surface of the connection layer are better than those on the surface of the semiconductor substrate. Therefore, when the photoresist is coated on the upper surface of the connecting layer, the photoresist is easy to form a film on the surface of the connecting layer, the use efficiency of the photoresist is improved, and the production cost is saved. Furthermore, the glue spreading method also comprises the step that the connecting layer and the photoresist layer can be formed into films by a spin coating method, so that the glue spreading method can also be manufactured by the same spin coating equipment without the conditions of vacuum, heating, pressurization and the like, the manufacturing is convenient, and the cost can be further saved.
The invention also provides a semiconductor structure, which comprises a semiconductor substrate, wherein the surface of the semiconductor substrate has hydrophilicity, a connecting layer is attached to the semiconductor substrate, the connecting layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, the upper surface of the connecting layer is a hydrophobic surface, and a photoresist layer is attached to the upper surface of the connecting layer. Because the connecting layer can be prepared from the surface modifier solution, the molecules of the surface modifier solution have an inorganic end and an organic end, the formed connecting layer is easy to form on the surface of the semiconductor substrate with hydrophilicity, and the photoresist is easy to attach to the upper surface of the connecting layer with hydrophobicity to form the photoresist layer. Therefore, when the photoresist layer in the semiconductor structure is formed, the use efficiency of the photoresist can be improved, and the production cost can be reduced. In addition, the connecting layer and the photoresist layer in the semiconductor structure can be formed by a spin coating method, can be manufactured and formed by the same equipment, does not need to add other equipment, does not need conditions such as vacuum, pressurization, heating and the like, and further reduces the production cost.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (10)
1. A method of gluing, comprising:
providing a semiconductor substrate, wherein the surface of the semiconductor substrate has hydrophilicity;
forming a connection layer on the surface of the semiconductor substrate, wherein the connection layer is prepared from a surface modifier solution, molecules of the surface modifier solution comprise an inorganic end with hydrophilic property and an organic end with hydrophobic property, and the upper surface of the connection layer is a hydrophobic surface; and the number of the first and second groups,
and coating photoresist on the upper surface of the connecting layer to form a photoresist layer.
2. The gumming method as in claim 1, wherein the inorganic end is a silicone end and the organic end is an amino end.
3. A gumming method as in claim 2, wherein the surface modifier solution is formed by solvothermal method from a silicone-oxygen coupling agent and an organic solvent.
4. A gumming method as in claim 3, wherein the step of forming the surface modifier solution by solvothermal method from the silicone coupling agent and the organic solvent comprises:
obtaining an organic solvent with the water content less than or equal to 1 Wt%;
mixing the organic solvent with the water content of less than or equal to 1 Wt% and the silica coupling agent according to a certain proportion to obtain a mixed solution;
injecting the mixed solution into a polytetrafluoroethylene hydrothermal kettle;
slowly heating to 80-180 ℃, wherein the heating rate is lower than 15 ℃/min;
preserving the heat for 1-24 h, cooling to room temperature, and taking out the solution after hydrothermal reaction as the surface modifier solution.
5. A gumming method as in claim 4, wherein the organic solvent having a water content of 1 Wt% or less is obtained by removing a part of water from the organic solvent having a purity of AR or more by distillation.
6. A method of gumming as in claim 3, wherein the organic solvent is at least one of acetone, absolute ethanol and toluene.
7. A paste applying method according to claim 1, wherein the connection layer and the photoresist layer are each formed into a film by a spin coating method.
8. A method for dispensing paste according to claim 7, wherein the connection layer and the photoresist layer are formed using the same spin coating apparatus, wherein the connection layer is formed by natural evaporation for 5s to 120s after the surface modifier solution is applied to the surface of the semiconductor substrate, and the photoresist is spin coated on the connection layer.
9. A paste coating method according to claim 7, wherein said semiconductor substrate is a silicon wafer, and said semiconductor substrate is subjected to a cleaning agent treatment to obtain a hydrophilic surface before said connection layer is formed.
10. A semiconductor structure comprising a semiconductor substrate, said semiconductor substrate having a hydrophilic surface, a tie layer attached to said semiconductor substrate, said tie layer being made from a surface modifier solution, molecules of said surface modifier solution comprising an inorganic end having hydrophilic properties and an organic end having hydrophobic properties, an upper surface of said tie layer being a hydrophobic surface, a photoresist layer attached to said upper surface of said tie layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911260228.3A CN110942981A (en) | 2019-12-10 | 2019-12-10 | Gluing method and semiconductor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911260228.3A CN110942981A (en) | 2019-12-10 | 2019-12-10 | Gluing method and semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110942981A true CN110942981A (en) | 2020-03-31 |
Family
ID=69910535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911260228.3A Pending CN110942981A (en) | 2019-12-10 | 2019-12-10 | Gluing method and semiconductor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110942981A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035695A (en) * | 2021-02-25 | 2021-06-25 | 泉芯集成电路制造(济南)有限公司 | Mask structure preparation method, semiconductor device and preparation method thereof |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518665A (en) * | 2001-07-24 | 2004-08-04 | �ձ�������ʽ���� | Enzyme electrode and its manufacturing method |
| CN1621945A (en) * | 2004-12-20 | 2005-06-01 | 西安交通大学 | Method for making dimethyl silicone polymer micro flow control chip composite type optical cured resin die arrangement |
| CN1811398A (en) * | 2005-01-20 | 2006-08-02 | 三星电子株式会社 | FET-type biosensor with surface modification |
| KR20140010892A (en) * | 2012-07-12 | 2014-01-27 | 성균관대학교산학협력단 | Graphene patterning method |
| CN104359869A (en) * | 2014-11-18 | 2015-02-18 | 中国科学院苏州生物医学工程技术研究所 | Biosensor based on nano particle assembly |
| CN104438021A (en) * | 2014-12-25 | 2015-03-25 | 华南师范大学 | Method for preparing hydrophilic coating on hydrophobic surface |
| CN105264543A (en) * | 2013-06-03 | 2016-01-20 | 高通Mems科技公司 | Ultrasonic sensor with bonded piezoelectric layer |
| CN105957939A (en) * | 2016-05-28 | 2016-09-21 | 江苏积汇新能源科技有限公司 | Vertical structure LED processing method based on flexible graphene electrode |
| CN106298501A (en) * | 2015-05-29 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN106567117A (en) * | 2016-11-21 | 2017-04-19 | 西北工业大学 | Surface treatment method of titanium alloy material |
| CN106827754A (en) * | 2015-12-03 | 2017-06-13 | 东京应化工业株式会社 | Manufacture method of layered product and application thereof |
| CN107203739A (en) * | 2017-04-14 | 2017-09-26 | 杭州士兰微电子股份有限公司 | Ultrasonic sensor and its manufacture method |
| CN207264404U (en) * | 2017-04-14 | 2018-04-20 | 杭州士兰微电子股份有限公司 | Ultrasonic sensor |
| CN108963001A (en) * | 2018-07-02 | 2018-12-07 | 合肥工业大学 | A kind of method of located growth perovskite thin film array |
| CN109313396A (en) * | 2016-05-18 | 2019-02-05 | Illumina公司 | It is patterned using the self assembly that patterned hydrophobic surface carries out |
| CN109713167A (en) * | 2017-10-26 | 2019-05-03 | Tcl集团股份有限公司 | A kind of pixel defining layer and preparation method and application |
| CN110028928A (en) * | 2019-05-16 | 2019-07-19 | 魏月秀 | A kind of photoresist adhesive, preparation method and application method |
-
2019
- 2019-12-10 CN CN201911260228.3A patent/CN110942981A/en active Pending
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518665A (en) * | 2001-07-24 | 2004-08-04 | �ձ�������ʽ���� | Enzyme electrode and its manufacturing method |
| CN1621945A (en) * | 2004-12-20 | 2005-06-01 | 西安交通大学 | Method for making dimethyl silicone polymer micro flow control chip composite type optical cured resin die arrangement |
| CN1811398A (en) * | 2005-01-20 | 2006-08-02 | 三星电子株式会社 | FET-type biosensor with surface modification |
| KR20140010892A (en) * | 2012-07-12 | 2014-01-27 | 성균관대학교산학협력단 | Graphene patterning method |
| CN105264543A (en) * | 2013-06-03 | 2016-01-20 | 高通Mems科技公司 | Ultrasonic sensor with bonded piezoelectric layer |
| CN104359869A (en) * | 2014-11-18 | 2015-02-18 | 中国科学院苏州生物医学工程技术研究所 | Biosensor based on nano particle assembly |
| CN104438021A (en) * | 2014-12-25 | 2015-03-25 | 华南师范大学 | Method for preparing hydrophilic coating on hydrophobic surface |
| CN106298501A (en) * | 2015-05-29 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN106827754A (en) * | 2015-12-03 | 2017-06-13 | 东京应化工业株式会社 | Manufacture method of layered product and application thereof |
| CN109313396A (en) * | 2016-05-18 | 2019-02-05 | Illumina公司 | It is patterned using the self assembly that patterned hydrophobic surface carries out |
| CN105957939A (en) * | 2016-05-28 | 2016-09-21 | 江苏积汇新能源科技有限公司 | Vertical structure LED processing method based on flexible graphene electrode |
| CN106567117A (en) * | 2016-11-21 | 2017-04-19 | 西北工业大学 | Surface treatment method of titanium alloy material |
| CN107203739A (en) * | 2017-04-14 | 2017-09-26 | 杭州士兰微电子股份有限公司 | Ultrasonic sensor and its manufacture method |
| CN207264404U (en) * | 2017-04-14 | 2018-04-20 | 杭州士兰微电子股份有限公司 | Ultrasonic sensor |
| CN109713167A (en) * | 2017-10-26 | 2019-05-03 | Tcl集团股份有限公司 | A kind of pixel defining layer and preparation method and application |
| CN108963001A (en) * | 2018-07-02 | 2018-12-07 | 合肥工业大学 | A kind of method of located growth perovskite thin film array |
| CN110028928A (en) * | 2019-05-16 | 2019-07-19 | 魏月秀 | A kind of photoresist adhesive, preparation method and application method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035695A (en) * | 2021-02-25 | 2021-06-25 | 泉芯集成电路制造(济南)有限公司 | Mask structure preparation method, semiconductor device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109163653B (en) | Preparation method of patterned graphene flexible strain sensor | |
| US6589889B2 (en) | Contact planarization using nanoporous silica materials | |
| CN105199457B (en) | A kind of lyophoby coating | |
| JP2007538358A5 (en) | ||
| WO2000013220A1 (en) | Nanoporous silica via combined stream deposition | |
| CN105623581B (en) | A low viscosity, low thermal expansion coefficient underfill and preparation method thereof | |
| JP2005519168A5 (en) | ||
| MXPA02002594A (en) | Improved apparatus and methods for integrated circuit planarization. | |
| CN110942981A (en) | Gluing method and semiconductor structure | |
| JP4084235B2 (en) | Protective film laminated fine structure and method for drying fine structure using the structure | |
| EP2946400A1 (en) | Surface pretreatment and drop spreading control on multi component surfaces | |
| CN109179312B (en) | A kind of preparation method of pattern metal film | |
| JPH07161744A (en) | Capsulation of electronic device | |
| KR20110096076A (en) | Carrier solvent compositions, coating compositions, and methods of making thick polymer coatings | |
| CN101332650B (en) | Casting molds for the production of elastic plastic castings with three-dimensional structures | |
| JPH10140087A (en) | Applying solution for forming insulating film between layers and formation of the same film using the same solution | |
| JPS62229862A (en) | Semiconductor element mounting circuit board having sealing frame | |
| CN112064018A (en) | A kind of room temperature liquid metal film and preparation method thereof | |
| CN110028928A (en) | A kind of photoresist adhesive, preparation method and application method | |
| EP3447578A1 (en) | Three-dimensional structure, method for making three-dimensional structure, and fluid ejection device | |
| CN108997603A (en) | A method of realizing that polymer matrix laminated film surface is crease-resistant by middle layer | |
| CN103293859A (en) | Method for manufacturing photoresist film | |
| CN107337995A (en) | A kind of high-temperature resistant waterborne polyurethane finishing agent and its application method | |
| JPH04340553A (en) | Laminated material for multilayer resist method | |
| JP3563709B2 (en) | Thin film formation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200331 |