CN110379849A - A kind of thin film transistor (TFT) and display panel - Google Patents

Abstract

The present invention provides a thin film transistor, which includes a gate, an active layer, a source and a drain, wherein the source includes two opposite first side parts and second side parts, and the upward first side of the two The ends are connected by an arc-shaped connecting part, and an opening is formed between the second downward ends of the two, and the drain electrode includes a vertical part, and the upward first end of the vertical part points to the connecting part. In the center, the second downward end of the vertical portion extends out of the opening; wherein the first side portion or the second side portion adopts an arc shape. The advantage of the present invention is to provide a thin film transistor, which increases the effective width of the thin film transistor by increasing the mutually symmetrical semicircular structure in the source, thereby realizing the maximum on-state current, increasing the on-state current of the thin film transistor, and making the thin film transistor The driving capability becomes stronger, reaching the driving voltage or current required by the display panel.

Description

A kind of thin film transistor and display panel

technical field

The invention relates to the technical field of display panels, in particular to a thin film transistor and a display panel.

Background technique

Liquid crystal display is currently the most widely used flat-panel display, and has gradually become a display device with high-resolution color screens widely used in various electronic devices such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or notebook computer screens. monitor. The liquid crystal display commonly used at present usually consists of upper and lower substrates and a middle liquid crystal layer, and the substrate is composed of glass and electrodes. If there are electrodes on the upper and lower substrates, a display in vertical electric field mode can be formed, such as TN (Twist Nematic) mode, VA (Vertical Alignment) mode, and MVA (Multi-domain Vertical Alignment) developed to solve the narrow viewing angle, PSVA ( Polymer Stabilized Alignment).

Another type of display is different from the above-mentioned displays, the electrodes are only located on one side of the substrate to form a lateral electric field mode display, such as IPS (In-plane switching) mode, FFS (Fringe Field Switching) mode, etc. In these display modes, the important function of a thin film transistor (TFT) as a scan line switch is indispensable.

The shape of the thin film transistor (TFT) commonly used at present is a U-shaped thin film transistor, as shown in Figure 1 is a schematic structural diagram of a traditional U-shaped thin film transistor, including a drain 1, an active layer 2, a source 3, and a gate 4, The source electrode 3 includes a first side portion 31 and a second side portion 32 arranged parallel to each other, one end of the two is connected by an arc-shaped connecting portion 33 , and the other end forms an opening. One end of the drain 1 is facing the center of the connecting portion 33 , while the other end extends out of the opening. The active layer 2 located between the source electrode 3 and the drain electrode 1 forms a channel region, and the width of the channel is W.

Wherein, since the first side portion 31 and the second side portion 32 of the source 3 are arranged parallel to each other, the distance between them is limited, that is, the width of the channel is limited, thereby limiting the on-state current of the thin film transistor . With the improvement of display specifications, such as larger size panels, higher resolution, higher driving frequency, etc., TFT cannot fully meet the needs at present.

Therefore, it is necessary to develop a new type of thin film transistor to overcome the defects of the prior art.

Contents of the invention

An object of the present invention is to provide a thin film transistor, which can solve the problem in the prior art that the driving frequency of the thin film transistor is relatively small compared to a panel with a larger size.

To achieve the above object, the present invention provides a thin film transistor, which includes a gate, an active layer, a source and a drain, wherein the source includes two oppositely arranged first side portions and second side portions, both The upward first end of the drain electrode is connected by an arc-shaped connecting portion, and an opening is formed between the two downward second ends. The drain electrode includes a vertical portion, and the upward first end of the vertical portion points to the The center of the connection part, the second end of the vertical part extends out of the opening; wherein the drain further includes a first horizontal part arranged laterally on the vertical part, the The first end and the second end of the opposite ends of the first transverse portion are respectively directed to the first side portion and the second side portion, wherein the first side portion or the second side portion adopts an arc shape .

Furthermore, in other embodiments, wherein the first side portion is arc-shaped, and its arc range is 0-2π.

Furthermore, in other embodiments, wherein the first end of the first transverse portion points to the center of the first side portion.

Furthermore, in other embodiments, wherein the second side portion is arc-shaped, and the arc range is 0-2π.

Furthermore, in other embodiments, wherein the second end of the first transverse portion points to the center of the second side portion.

Further, in other embodiments, wherein the second end of the first side part is also connected to a first end of a third side part, and the second end of the second side part is also connected to a fourth side part An opening is formed between the first end, the second downward end of the third side portion and the fourth side portion; the second downward end of the vertical portion extends out of the third side portion and the fourth side portion In addition to the opening formed between the second ends of the fourth side part, the vertical part is also provided with a second transverse part parallel to the first transverse part, and the first ends and the opposite ends of the second transverse part are The second ends respectively point to the third side and the fourth side, wherein the third side or the fourth side adopts an arc shape.

Further, in its embodiment, wherein the third side portion is arc-shaped, and its arc range is 0-2π; wherein the first end of the second transverse portion points to the center of the third side portion .

Further, in its embodiment, wherein the fourth side portion is arc-shaped, and its arc range is 0-2π; wherein the second end of the second transverse portion points to the center of the fourth side portion .

Further, in its implementation mode, the number and arrangement of the first side portion and the second side portion can be determined according to needs, and there is no limit, as long as the effective width of the thin film transistor can be increased, To maximize the on-state current.

Furthermore, in other implementation manners, wherein the drain has a cross-shaped structure.

Furthermore, in other implementation manners, the drain has an inverted T-shaped structure.

Further, in other implementation manners, wherein the source and drain are arranged in the same layer; the active layer is located between the gate and the film layer where the source and drain are located, and the gate insulated from the active layer.

Another object of the present invention is to provide a display panel, which includes a body on which the thin film transistor of the present invention is disposed.

Compared with the prior art, the beneficial effect of the present invention is to provide a thin film transistor, which increases the effective width of the thin film transistor by increasing the arc-shaped first side and second side of the source, thereby realizing the maximum opening. The on-state current increases the on-state current of the thin film transistor, so that the driving capability of the thin film transistor becomes stronger, and reaches the driving voltage or current required by the display panel.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

FIG. 1 is a schematic structural diagram of a thin film transistor in the prior art;

FIG. 2 is a schematic structural diagram of a thin film transistor provided in Embodiment 1 of the present invention;

FIG. 3 is a schematic structural diagram of a thin film transistor provided by Embodiment 2 of the present invention.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Specific structural and functional details disclosed herein are representative only and for purposes of describing example embodiments of the present invention. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

In describing the present invention, it is to be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the referred device Or elements must have a certain orientation, be constructed and operate in a certain orientation, and thus should not be construed as limiting the invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined by "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more. Additionally, the term "comprise" and any variations thereof, are intended to cover a non-exclusive inclusion.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "an" are intended to include the plural unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and/or "comprising" as used herein specify the presence of stated features, integers, steps, operations, units and/or components, but do not exclude the presence or addition of one or more Other features, integers, steps, operations, units, components and/or combinations thereof.

Example 1

Please refer to FIG. 2. FIG. 2 is a schematic diagram of the structure of the thin film transistor provided by Embodiment 1 of the present invention. Grid 4.

The source electrode 3 includes a first side portion 31 and a second side portion 32, both of which are oppositely arranged in an arc shape, and the upward first ends of the two are connected by an arc-shaped connecting portion 33, and the downward ends of the two An opening is formed between the second ends. In other embodiments, the radians of the first side portion 31 and the second side portion 32 range from 0 to 2π, and in this embodiment, they are preferably semicircular with a radian of π.

The drain electrode 1 includes a first horizontal portion 11 and a vertical portion 12, the first horizontal portion 11 is laterally arranged on the vertical portion 12, the first end of the first horizontal portion 11 points to the center of the first side portion 31, and the first horizontal portion The second end of the portion 11 points towards the center of the second side portion 32 . The upward first end of the vertical portion 12 points to the center of the connecting portion 33 , and the downward second end extends outside the opening formed between the first side portion 31 and the downward second end of the second side portion 32 .

The active layer 2 located between the source 3 and the drain 1 forms a channel region, the width of the channel is W, and the arrangement of the first lateral portion defines the width of the channel.

This semi-surrounding method is adopted, and the source 3 includes a circular arc structure and two semicircular structures that are symmetrical to each other. This arrangement can increase the effective width of the thin film transistor to the greatest extent, thereby achieving the maximum on-state current and improving The on-state current of the thin film transistor increases the driving capability of the thin film transistor to reach the driving voltage or current required by the display panel.

The above-mentioned source, drain and gate are three electrodes of the thin film transistor, and the thin film transistors are divided into two types according to the positional relationship of the electrodes. One is that the gate is located below the source and drain, which is called a bottom-gate thin film transistor; the other is that the gate is located above the source and drain, and this is called a top-gate thin-film transistor . In the embodiment of the present invention, the thin film transistors are all bottom-gate thin film transistors, the source 3 and the drain 1 are arranged on the same layer, the active layer 2 is located between the gate 4 and the film layer where the source 3 and the drain 1 are located, and the gate The pole 4 is insulated from the active layer 2 .

Regarding the structure of the above thin film transistor, the drain can have various structures, such as an inverted T-shaped structure or a cross-shaped structure. In this embodiment, the drain is preferably a cross-shaped structure.

Example 2

Please refer to FIG. 3. FIG. 3 is a schematic diagram of the structure of the thin film transistor provided by Embodiment 2 of the present invention. The structure of the thin film transistor in this embodiment is roughly the same as that in Embodiment 1. For the same structure, refer to the above method. Here No more details, the main difference is that the source 3 also includes a third side portion 34 and a fourth side portion 35, the second end of the first side portion 31 is connected to the first end of the third side portion 34, and the second end of the third side portion 34 The second end of the two side parts 32 is connected to the first end of the fourth side part 35, an opening is formed between the third side part 34 and the downward second end of the fourth side part 35, and the second end of the vertical part 12 is downward. The end extends out of the third side portion 34 and the fourth side portion 35 and forms an opening between the downward second ends; the third side portion 34 and the fourth side portion 35 all adopt an arc shape, preferably a radian that is half of π round.

The main difference is that the drain electrode 1 also includes a second lateral portion 13, the second lateral portion 13 is parallel to the first lateral portion 11, and the first end of the second lateral portion 13 points to the third side portion 34. center, the second end of which points to the center of the fourth side portion 35 .

In its implementation, the number and arrangement of the first side and the second side can be determined according to the needs, and there is no limit, as long as the effective width of the thin film transistor can be increased and the maximum on-state current can be realized. .

Example 3

Yet another embodiment of the present invention provides a display panel, which includes a body on which the thin film transistor provided in Embodiment 1 or Embodiment 2 is disposed.

The beneficial effect of the present invention is to provide a thin film transistor, the effective width of the thin film transistor is increased by increasing the first side portion and the second side portion of the circular arc shape in the source, thereby realizing the maximum on-state current and improving the thickness of the thin film transistor. The on-state current increases the driving capability of the thin film transistor to reach the driving voltage or current required by the display panel.

The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications should also be considered Be the protection scope of the present invention.

Claims (10)

1. A thin film transistor, characterized in that it comprises a grid, an active layer, a source and a drain, wherein the source comprises two oppositely arranged first side portions and second side portions, and both upward The first end of the drain electrode is connected by an arc-shaped connecting part, and an opening is formed between the second downward ends of the two, and the drain electrode includes a vertical part, and the first upward end of the vertical part points to the connection the center of the vertical portion, and the second downward end of the vertical portion extends out of the opening; it is characterized in that the drain electrode further includes a first horizontal portion arranged laterally on the vertical portion, The first end and the second end of the opposite ends of the first transverse portion are respectively directed to the first side portion and the second side portion, wherein the first side portion or the second side portion adopts an arc shaped shape. 2 . The thin film transistor according to claim 1 , wherein the first side portion is arc-shaped, and the arc range is 0˜2π. 3. The thin film transistor according to claim 2, wherein the first end of the first lateral portion points to the center of the first side portion. 4 . The thin film transistor according to claim 1 , wherein the second side portion is arc-shaped, and the arc range is 0˜2π. 5 . The thin film transistor according to claim 4 , wherein the second end of the first lateral portion points to the center of the second side portion. 6. The thin film transistor according to claim 1, wherein the second end of the first side part is further connected to a first end of a third side part, and the second end of the second side part Also connected to the first end of a fourth side portion, an opening is formed between the third side portion and the downward second end of the fourth side portion; the downward second end of the vertical portion extends out of the In addition to the opening formed between the third side portion and the second end of the fourth side portion, the vertical portion is also provided with a second transverse portion parallel to the first transverse portion, and the second transverse portion The first end and the second end of the two opposite ends respectively point to the third side portion and the fourth side portion, wherein the third side portion or the fourth side portion adopts an arc shape. 7. The thin film transistor according to claim 6, wherein the third side portion is arc-shaped, and its arc range is 0-2π; wherein the first end of the second lateral portion points to the the center of the third side. 8 . The thin film transistor according to claim 6 , wherein the fourth side portion is arc-shaped, and its arc range is 0-2π; wherein the second end of the second lateral portion points to the the center of the fourth side. 9. The thin film transistor according to claim 1, wherein the source and drain are arranged in the same layer; the active layer is located in the film where the gate and the source and drain are located Between layers, the gate is insulated from the active layer. 10. A display panel, characterized in that it comprises a body on which the thin film transistor according to any one of claims 1-9 is disposed.