CN109980027B - Solar cell with high conversion rate - Google Patents

Abstract

The invention discloses a solar cell with high conversion rate, comprising a substrate, a first conductive layer is arranged on the substrate, and a P+ amorphous silicon layer is arranged on the side of the substrate located on the first conductive layer, and a P+ amorphous silicon layer is arranged on the side of the substrate. The side away from the first conductive layer is provided with an intrinsic amorphous silicon layer, the side away from the P+ amorphous silicon layer of the intrinsic amorphous silicon layer is provided with an N+ amorphous silicon layer, and the N+ amorphous silicon layer is located away from the intrinsic amorphous silicon layer. One side of the layer is provided with a protective layer. In the present invention, in order to improve efficiency and improve stability, a multi-layered structure such as three-layer P-i-N is made, or some transition layers are inserted, wherein the essential amorphous silicon layer is i It is used to improve the photoelectric conversion efficiency and stability of solar cells with amorphous silicon structure, and the thickness of amorphous silicon solar cells is only 1% of the thickness of monocrystalline silicon or polycrystalline silicon, which can better absorb sunlight. A large amount of materials are saved, the fabrication cost of solar cells is reduced, and the photoelectric conversion efficiency of solar cells is improved at the same time.

Description

A high-efficiency solar cell

technical field

The present invention relates to the technical field of solar energy, and more particularly, to a solar cell with high conversion rate.

Background technique

With the continuous development and progress of equipment, the continuous development of energy, and energy is divided into renewable resources and non-renewable resources. Actively change the development mode, adjust the power supply structure, and adhere to the road of clean, green, and low-carbon development. To achieve green, clean, and low-carbon development, we need to yearn for the development of renewable resources, and renewable resources are mainly solar energy, wind energy, tidal energy, etc. Among them, solar energy is the main sustainable natural resource, and solar cells are a device that can convert solar energy into electrical energy. The utilization of solar energy resources needs to focus on the efficiency of photoelectric conversion of solar energy.

In the prior art, the conductive elements in the existing solar cells are mostly made of opaque materials, and the staggered distribution of the conductive elements reduces the light harvesting rate of the solar cells due to their opaque properties, while the existing solar cells are mostly single crystal. Silicon or polycrystalline silicon solar cells have low light harvesting efficiency.

SUMMARY OF THE INVENTION

In view of the deficiencies in the prior art, the purpose of the present invention is to provide a solar cell with high conversion rate, which is convenient to use the solar cell structure of amorphous silicon, and is made into three-layer P-i-N and other multi-layer stacks for improving efficiency and stability. structure, or insert some transition layers, in which the intrinsic amorphous silicon layer is the i-layer, which is used to improve the photoelectric conversion efficiency and stability of the solar cell of the amorphous silicon structure, and the thickness of the amorphous silicon solar cell is only monocrystalline silicon. Or 1% of the thickness of polysilicon can better absorb sunlight, which not only saves a lot of materials, reduces the manufacturing cost of solar cells, but also improves the photoelectric conversion efficiency of solar cells.

For achieving the above object, the present invention provides the following technical solutions:

A solar cell with high conversion rate, comprising a substrate, a first conductive layer is arranged on the substrate, and a P+ amorphous silicon layer is arranged on the side of the substrate located on the first conductive layer, the P+ amorphous silicon layer is The side of the layer away from the first conductive layer is provided with an intrinsic amorphous silicon layer, and the side of the intrinsic amorphous silicon layer away from the P+ amorphous silicon layer is provided with an N+ amorphous silicon layer, the N+ A protective layer is disposed on the side of the amorphous silicon layer away from the intrinsic amorphous silicon layer, and a second conductive layer is disposed between the protective layer and the side opposite to the N+ amorphous silicon layer.

By adopting the above-mentioned technical solution, the solar cell structure of amorphous silicon is used to make three-layer P-i-N and other multi-layered structures in order to improve efficiency and stability, or insert some transition layers, wherein the intrinsic amorphous silicon layer is the i-layer It is used to improve the photoelectric conversion efficiency and stability of solar cells with amorphous silicon structure, and the thickness of amorphous silicon solar cells is only 1% of the thickness of monocrystalline silicon or polycrystalline silicon, which can better absorb sunlight and save energy. A large number of materials can reduce the fabrication cost of solar cells and improve the photoelectric conversion efficiency of solar cells at the same time.

Further, the substrate can be graphite, ceramic, glass, stainless steel, etc., and the substrate can be a transparent material.

By adopting the above technical solution, the substrate is made of easily obtained materials, and the cost of fabrication is reduced, thereby significantly reducing the cost of fabrication of solar cells, which facilitates mass production and fabrication.

Further, the first conductive layer includes a first insulating strip, the structure of the first insulating strip is a mountain shape, and a second insulating strip is arranged on the first conductive layer inside the first insulating strip, so The second insulating strip and the first insulating strip communicate with each other, the first insulating strip is provided with a first electrode strip, the second insulating strip is provided with a second electrode strip, and the first electrode strip is provided on the second insulating strip. The strips are electrically connected to the second electrode strips.

By adopting the above technical solution, the first insulating strip and the second insulating strip are respectively disposed between the opposite sides of the first electrode strip and the second electrode strip and the substrate, and the first insulating strip and the second insulating strip can be sprayed The method is formed on the substrate, and the electrode strips are covered and wrapped by insulating strips, which can effectively prevent the first electrode strip and the second electrode strip from reacting through the substrate when the first electrode strip and the second electrode strip transmit charge carriers, reducing the charge transmission. The loss of current in the process improves the quality and efficiency of charge transfer in the first conductive layer, thereby ensuring the quality of solar power generation.

Further, the first electrode strips and the second electrode strips in the first conductive layer are both made of graphene, and the first electrode strips and the second electrode strips are both light-transmitting and conductive. Both the first insulating strip and the second insulating strip are transparent insulating coatings.

By adopting the above technical solution, the first electrode strip and the second electrode strip adopt a transparent and conductive structure, which not only ensures the circulation of electric charges, but also ensures the permeability of light, reduces the reflection of pipelines, and improves the entry rate of light. The first insulating strip and the second insulating strip adopt a transparent insulating coating, wherein the coating is mainly a mixture of nano-scale alumina ceramic powder material and transparent synthetic chelating resin, which has high temperature resistance, insulation and high transparency, and is convenient for light to pass through. penetrate.

Further, both sides of the first electrode strip and the second electrode strip away from the substrate are electrically connected to one side of the P+ amorphous silicon layer.

By adopting the above technical solution, when photoelectric conversion occurs inside the P+ amorphous silicon layer, charges can be transferred through the first electrode strip and the second electrode strip.

Further, the protective layer is made of glass as a raw material, the protective layer is the light-receiving surface of the solar cell, and the outer surface of the protective layer is provided with a filter coating.

By adopting the above technical solution, the filter coating has a light source whose temperature is too high and cannot be used in the filtered sunlight, preventing the solar cell from being overheated and affecting the service life of the solar cell during the use process, and ensuring the solar cell service life.

Further, the second conductive layer includes a third insulating strip, the structure of the third insulating strip is a mountain shape, and a fourth insulating strip is disposed inside the third insulating strip on the second conductive layer, so The fourth insulating strip and the third insulating strip communicate with each other, the third insulating strip is provided with a third electrode strip, the fourth insulating strip is provided with a fourth electrode strip, and the third electrode strip is provided on the fourth insulating strip. The strip and the fourth electrode strip are electrically connected, and the overall material and characteristics of the second conductive layer are the same as the overall material and characteristics of the first conductive layer.

By adopting the above technical solution, the second conductive layer is located on one side of the light-receiving surface, and the overall structure and material of the second conductive layer are the same as the overall structure and material of the first conductive layer, thereby ensuring the permeability of the pipeline and at the same time. Ensure the quality of charge transmission and reduce the reflection of sunlight, thereby further improving the absorption rate of sunlight by solar cells.

Further, the side of the N+ amorphous silicon layer away from the intrinsic amorphous silicon layer is provided as an arc-shaped protrusion.

By adopting the above technical solution, the arc-shaped convex structure can reduce the reflection of sunlight and increase the light-receiving area, thereby improving the solar absorption rate of the battery.

Further, a plurality of lighting blocks are evenly arranged on the side of the protective layer on the sunlight receiving surface, and the lighting blocks are arc-shaped irregular crystal plane structures.

By adopting the above technical solution, the specific surface area is increased by the structure of the irregular crystal plane of the lighting block, thereby increasing the light absorption rate, thereby improving the light conversion rate of the solar cell to sunlight.

To sum up, the present invention mainly has the following beneficial effects:

1. In the present invention, the solar cell structure of amorphous silicon is adopted, and in order to improve efficiency and stability, a multi-layered structure such as three-layer P-i-N is made, or some transition layers are inserted, wherein the essential amorphous silicon layer is the i-layer, It is used to improve the photoelectric conversion efficiency and stability of solar cells with amorphous silicon structure, and the thickness of amorphous silicon solar cells is only 1% of the thickness of monocrystalline silicon or polycrystalline silicon, which can better absorb sunlight, which not only saves a lot of money materials, reducing the production cost of solar cells and improving the photoelectric conversion efficiency of solar cells;

2. In the present invention, materials that are easy to obtain are used to make the substrate, which reduces the cost of production, thereby significantly reducing the cost of solar cell production, so as to facilitate mass production and production;

3. In the present invention, the first insulating strip and the second insulating strip can be formed on the substrate by spraying, and the electrode strips are covered and wrapped by the insulating strips, which can effectively avoid the first electrode strip and the second electrode strip. When transferring charge carriers, there will be no reaction of charges passing through the substrate, reducing the loss of current during the charge transfer process, improving the quality and efficiency of charge transfer in the first conductive layer, and thus ensuring the quality of solar power generation;

4. In the present invention, both the first electrode strip and the second electrode strip adopt a transparent and conductive structure, which not only ensures the circulation of electric charges, but also ensures the permeability of light, reduces the reflection of pipelines, and improves the entry rate of light. The first insulating strip and the second insulating strip adopt a transparent insulating coating, wherein the coating is mainly a mixture of nano-scale alumina ceramic powder material and transparent synthetic chelating resin, which has high temperature resistance, insulation and high transparency, and is convenient for light transmission. enter;

5. In the present invention, the arc-shaped convex structure can reduce the reflection of sunlight and increase the light-receiving area, thereby improving the solar absorption rate of the battery, and the structure of the irregular crystal plane of the lighting block increases the specific surface area, thereby increasing the light absorption rate. , so as to improve the light conversion rate of solar cells to sunlight, and the filter coating has a light source that is too high in temperature to filter solar energy and cannot be used to prevent solar cells from being affected by excessive temperature during use. The service life of the solar cell is guaranteed.

Description of drawings

Fig. 1 is a kind of preferred overall structural representation of the present invention;

2 is a schematic structural diagram of a portion of the first conductive layer in FIG. 1 of the present invention;

Fig. 3 is the sectional view of the integral part in Fig. 1 of the present invention;

4 is a schematic structural diagram of a portion of the second conductive layer in FIG. 1 of the present invention;

Fig. 5 is the structural representation of the arc-shaped convex part in Fig. 3 of the present invention;

FIG. 6 is an enlarged view of the position A in FIG. 1 of the present invention.

In the figure: 1, the substrate; 2, the first conductive layer; 21, the first insulating strip, 22, the second insulating strip, 23, the first electrode strip, 24, the second electrode strip, 3, the P+ amorphous silicon layer; 4. Essential amorphous silicon layer; 5. N+ amorphous silicon layer; 6. Protective layer; 7. Second conductive layer; 71. Third insulating strip, 72, fourth insulating strip, 73, third electrode strip, 74 , the fourth electrode strip, 8, arc convex; 9, lighting block.

Detailed ways

The present invention will be further described in detail below in conjunction with accompanying drawings 1-6.

A solar cell with high conversion rate, as shown in FIGS. 1-4 , includes a substrate 1 , a first conductive layer 2 is provided on the substrate 1 , and a side of the substrate 1 located on the first conductive layer 2 is provided There is a P+ amorphous silicon layer 3, the side of the P+ amorphous silicon layer 3 away from the first conductive layer 2 is provided with an intrinsic amorphous silicon layer 4, and the intrinsic amorphous silicon layer 4 is away from the P+ One side of the amorphous silicon layer 3 is provided with an N+ amorphous silicon layer 5, and a side of the N+ amorphous silicon layer 5 away from the intrinsic amorphous silicon layer 4 is provided with a protective layer 6, the protective layer 6 and the protective layer 6. A second conductive layer 7 is disposed between the opposite sides of the N+ amorphous silicon layer 5 .

The solar cell structure using amorphous silicon is made into a multi-layered structure such as three-layer P-i-N to improve efficiency and stability, or insert some transition layers, in which the intrinsic amorphous silicon layer 4 is an i-layer, which is used to improve the The photoelectric conversion efficiency and stability of solar cells with silicon crystal structure, and the thickness of amorphous silicon solar cells is only 1% of the thickness of monocrystalline silicon or polycrystalline silicon, which can better absorb sunlight, which not only saves a lot of materials, reduces the The production cost of solar cells is improved, and the photoelectric conversion efficiency of solar cells is improved at the same time.

Preferably, the substrate 1 can be made of graphite, ceramics, glass, stainless steel, etc., and the substrate 1 can be made of a transparent material.

The substrate 1 is made of materials that are easy to obtain, so as to reduce the cost of fabrication, thereby significantly reducing the cost of fabrication of solar cells, so as to facilitate mass production and fabrication.

Preferably, the first conductive layer 2 includes a first insulating strip 21, the structure of the first insulating strip 21 is a mountain shape, and the first conductive layer 2 is located inside the first insulating strip 21. The second insulating bar 22, the second insulating bar 22 and the first insulating bar 21 communicate with each other, the first insulating bar 21 is provided with the first electrode bar 23, and the second insulating bar 22 is A second electrode strip 24 is provided, and the first electrode strip 23 and the second electrode strip 24 are electrically connected.

The first insulating bar 21 and the second insulating bar 22 are respectively disposed between the first electrode bar 23 and the second electrode bar 24 and the opposite side of the substrate 1, and the first insulating bar 21 and the second insulating bar 22 can be sprayed The electrode strips are formed on the substrate 1 by means of insulating strips, and the electrode strips are covered and wrapped by insulating strips, which can effectively prevent the first electrode strips 23 and the second electrode strips 24 from transmitting charge carriers. Reaction, reducing the loss of current during the charge transfer process, improving the quality and efficiency of charge transfer in the first conductive layer 2, thereby ensuring the quality of solar power generation.

Preferably, the first electrode strips 23 and the second electrode strips 24 in the first conductive layer 2 are made of graphene as a raw material, and the first electrode strips 23 and the second electrode strips 24 are both transparent and transparent. The conductive feature, the first insulating strip 21 and the second insulating strip 22 are both transparent insulating coatings.

Both the first electrode strip 23 and the second electrode strip 24 adopt a transparent and conductive structure, which not only ensures the circulation of electric charges, but also ensures the permeability of light, reduces the reflection of pipelines, and improves the entry rate of light. 21 and the second insulating strip 22 adopt a transparent insulating coating, wherein the coating is mainly a mixture of nano-scale alumina ceramic powder material and transparent synthetic chelating resin, which has high temperature resistance, insulation and high transparency, and facilitates the penetration of light. .

Preferably, the sides of the first electrode strips 23 and the second electrode strips 24 away from the substrate 1 are both electrically connected to one side of the P+ amorphous silicon layer 3 .

To facilitate photoelectric conversion inside the P+ amorphous silicon layer 3 , charges can be transferred through the first electrode strips 23 and the second electrode strips 24 .

Preferably, the protective layer 6 is made of glass as a raw material, the protective layer 6 is the light-receiving surface of the solar cell, and the outer surface of the protective layer 6 is provided with a filter coating.

The filter coating has the ability to filter the solar energy, the temperature is too high, the light source that cannot be used, prevent the solar cell from being too high in the use process and affect the service life of the solar cell, and ensure the service life of the solar cell.

Preferably, the second conductive layer 7 includes a third insulating strip 71, the structure of the third insulating strip 71 is a mountain shape, and the second conductive layer 7 is located inside the third insulating strip 71. A fourth insulating strip 72, the fourth insulating strip 72 and the third insulating strip 71 communicate with each other, the third insulating strip 71 is provided with a third electrode strip 73, and the fourth insulating strip 72 is on the A fourth electrode strip 74 is provided, the third electrode strip 73 and the fourth electrode strip 74 are electrically connected, and the overall material and characteristics of the second conductive layer 7 are the same as those of the first conductive layer 2 . The overall material and characteristics are the same, and the third electrode strips 73 and the fourth electrode strips 74 are electrically connected to the opposite side of the N+ amorphous silicon layer 5 .

The second conductive layer 7 is located on one side of the light-receiving surface, and the overall structure and material of the second conductive layer 7 are the same as the overall structure and material of the first conductive layer 2, thereby ensuring the permeability of the pipeline and ensuring charge transmission. The quality of the solar cell reduces the reflection of sunlight, thereby further improving the absorption rate of sunlight by the solar cell.

Preferably, as shown in FIG. 5 , the side of the N+ amorphous silicon layer 5 away from the intrinsic amorphous silicon layer 4 is provided with an arc-shaped protrusion 8 .

The structure of the arc-shaped protrusion 8 can reduce the reflection of sunlight and increase the light-receiving area, thereby improving the solar absorption rate of the battery.

Preferably, a plurality of lighting blocks 9 are evenly arranged on the side of the protective layer 6 which is located on the sunlight receiving surface, and the lighting blocks 9 are arc-shaped irregular crystal plane structures.

The structure of the irregular crystal plane of the lighting block 9 increases the specific surface area, thereby increasing the light absorption rate, thereby improving the light conversion rate of the solar cell to sunlight.

Working principle: The solar cell with high conversion rate adopts the solar cell structure of amorphous silicon. In order to improve efficiency and stability, it is made into a multi-layered structure such as three-layer P-i-N, or some transition layers are inserted, which are essentially amorphous. The silicon layer 4 is an i-layer, which is used to improve the photoelectric conversion efficiency and stability of the solar cell with amorphous silicon structure, and the thickness of the amorphous silicon solar cell is only 1% of the thickness of single crystal silicon or polycrystalline silicon. Absorbing sunlight not only saves a lot of materials, reduces the production cost of solar cells, but also improves the photoelectric conversion efficiency of solar cells. The substrate 1 is made of materials that are easy to obtain, which reduces the production cost, thereby significantly reducing the cost of solar cell production. In order to facilitate mass production and fabrication, the first insulating bar 21 and the second insulating bar 22 are respectively disposed between the first electrode bar 23 and the second electrode bar 24 and the opposite side of the substrate 1, and the first insulating bar 21 and the The second insulating strips 22 can be formed on the substrate 1 by spraying, and the electrode strips are covered and wrapped by the insulating strips, which can effectively prevent the first electrode strips 23 and the second electrode strips 24 from transmitting charge carriers. There will be a reaction of charges passing through the substrate 1, reducing the loss of current during the charge transfer process, improving the quality and efficiency of charge transfer in the first conductive layer 2, thereby ensuring the quality of solar power generation. The first electrode strip 23 and the second electrode strip 24 All adopt a transparent and conductive structure, which not only ensures the circulation of electric charges, but also ensures the permeability of light, reduces the reflection of pipelines, and improves the entry rate of light. The first insulating strip 21 and the second insulating strip 22 are made of transparent insulating Coating, in which the coating is mainly composed of nano-scale alumina ceramic powder material mixed with transparent synthetic chelating resin, which has high temperature resistance, insulation and high transparency, which facilitates the penetration of light and facilitates the occurrence of P+ amorphous silicon layer 3. During photoelectric conversion, charges can be transmitted through the first electrode strips 23 and the second electrode strips 24. The filter coating has a light source that filters the solar energy, the temperature is too high and cannot be used, which prevents the solar cell from being used in the process. If the temperature is too high, it will affect the service life of the solar cell and ensure the service life of the solar cell. The second conductive layer 7 is located on the side of the light receiving surface, and the overall structure and material of the second conductive layer 7 are the same as the overall The structure is the same as the material, which ensures the permeability of the pipeline and the quality of charge transmission, reduces the reflection of sunlight, and further improves the absorption rate of sunlight by the solar cell. The reflection of light increases the light-receiving area, thereby improving the solar cell's absorption rate. The irregular crystal plane structure of the lighting block 9 increases the specific surface area, thereby increasing the light absorption rate, thereby improving the solar cell's light conversion rate to sunlight.

How to use: When in use, the sunlight increases the specific surface area through the structure of the irregular crystal plane of the lighting block 9, thereby increasing the absorption rate of sunlight. The light source whose temperature is too high and cannot be used can prevent the solar cell from being overheated during use and affecting the service life of the solar cell. After the sunlight passes through the filter coating, it enters the amorphous silicon photoelectric conversion structure through the protective layer 6. Internally, photoelectric conversion is realized, and after photoelectric conversion, charges are transferred to corresponding devices through the first conductive layer 2 and the second conductive layer 7 .

The parts not involved in the present invention are the same as the prior art or can be implemented by using the prior art.

This specific embodiment is only an explanation of the present invention, and it does not limit the present invention. Those skilled in the art can make modifications without creative contribution to the present embodiment as required after reading this specification, but as long as the rights of the present invention are used All claims are protected by patent law.

Claims (9)

1. A solar cell with a high conversion rate, comprising a substrate (1), characterized in that: a first conductive layer (2) is provided on the substrate (1), and a portion of the substrate (1) located in the first conductive layer A P+ amorphous silicon layer (3) is provided on one side of the layer (2), and an intrinsic amorphous silicon layer ( 4), an N+ amorphous silicon layer (5) is provided on the side of the intrinsic amorphous silicon layer (4) away from the P+ amorphous silicon layer (3), and the N+ amorphous silicon layer (5) is A protective layer (6) is provided on the side away from the intrinsic amorphous silicon layer (4), and a second protective layer (6) is provided between the protective layer (6) and the side opposite to the N+ amorphous silicon layer (5). Conductive layer (7). 2 . The solar cell with high conversion rate according to claim 1 , wherein the substrate ( 1 ) is graphite, ceramic, glass or stainless steel. 3 . 3 . The solar cell with high conversion rate according to claim 1 , wherein the first conductive layer ( 2 ) comprises a first insulating strip ( 21 ), and the first insulating strip ( 21 ) has a The structure is mountain-shaped, and a second insulating bar (22) is arranged inside the first insulating bar (21) on the first conductive layer (2), and the second insulating bar (22) is connected to the first insulating bar (22). The insulating bars (21) communicate with each other, the first insulating bars (21) are provided with first electrode bars (23), and the second insulating bars (22) are provided with second electrode bars (24), The first electrode strip (23) and the second electrode strip (24) are electrically connected. 4 . The solar cell with high conversion rate according to claim 3 , wherein the first electrode strips ( 23 ) and the second electrode strips ( 24 ) in the first conductive layer ( 2 ) are made of Graphene is made of raw materials, and the first electrode strips (23) and the second electrode strips (24) are both light-transmitting and conductive, and the first insulating strips (21) and the second insulating strips (22). ) are transparent insulating coatings. 5 . The solar cell with high conversion rate according to claim 3 , wherein the first electrode strip ( 23 ) and the second electrode strip ( 24 ) are far from the substrate ( 1 ). 6 . One side is electrically connected to one side of the P+ amorphous silicon layer (3). 6 . The solar cell with high conversion rate according to claim 1 , wherein the protective layer ( 6 ) is made of glass as a raw material, and the protective layer ( 6 ) is the light-receiving surface of the solar cell, 6 . The outer surface of the protective layer (6) is provided with a filter coating. 7 . The solar cell with high conversion rate according to claim 4 , wherein the second conductive layer ( 7 ) comprises a third insulating strip ( 71 ), and the third insulating strip ( 71 ) has a The structure is mountain-shaped, and a fourth insulating bar (72) is arranged inside the third insulating bar (71) on the second conductive layer (7), and the fourth insulating bar (72) is connected to the third insulating bar (72). The insulating bars (71) communicate with each other, a third electrode bar (73) is arranged on the third insulating bar (71), and a fourth electrode bar (74) is arranged on the fourth insulating bar (72), The third electrode strip (73) and the fourth electrode strip (74) are electrically connected, and the overall material and characteristics of the second conductive layer (7) are the same as those of the first conductive layer (2). The overall material and properties are the same. 8. A solar cell with high conversion rate according to claim 1, characterized in that: the side of the N+ amorphous silicon layer (5) away from the intrinsic amorphous silicon layer (4) is arranged in an arc shaped protrusion (8). 9 . The solar cell with high conversion rate according to claim 1 , wherein a plurality of lighting blocks ( 9 ) are evenly arranged on the side of the protective layer ( 6 ) which is located on the sunlight receiving surface, 9 . The lighting block (9) has an arc-shaped irregular crystal plane structure.

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