CN108818161A - The rework system and method for silicon wafer - Google Patents
The rework system and method for silicon wafer Download PDFInfo
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- CN108818161A CN108818161A CN201810821335.8A CN201810821335A CN108818161A CN 108818161 A CN108818161 A CN 108818161A CN 201810821335 A CN201810821335 A CN 201810821335A CN 108818161 A CN108818161 A CN 108818161A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 284
- 239000010703 silicon Substances 0.000 title claims abstract description 284
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 282
- 238000000034 method Methods 0.000 title claims description 41
- 238000005498 polishing Methods 0.000 claims abstract description 44
- 238000001514 detection method Methods 0.000 claims abstract description 42
- 238000004140 cleaning Methods 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 19
- 230000002950 deficient Effects 0.000 claims description 16
- 239000013618 particulate matter Substances 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 10
- 230000037303 wrinkles Effects 0.000 claims description 8
- 238000007517 polishing process Methods 0.000 claims description 6
- 238000012797 qualification Methods 0.000 claims 1
- 239000003344 environmental pollutant Substances 0.000 abstract description 4
- 231100000719 pollutant Toxicity 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 216
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to a kind of rework systems of silicon wafer, including：Detection device, sorter, burnishing device and cleaning device；The detection device detects silicon wafer to judge its specifications parameter, is high-quality class if reaching preset value, otherwise is flaw class；The burnishing device is to flaw silicon wafer polishing；The cleaning device cleans the silicon wafer after polishing, and the detection device carries out flatness detection to prewashed silicon wafer tentatively to define the level；The detection of particle dustiness is carried out to the silicon wafer cleaned again and deciding grade and level, the sorter distinguish qualified silicon wafer and unqualified silicon wafer.By the way that flaw silicon wafer is done over again and degraded simultaneously in the present invention, reduce silicon wafer do over again and wash number, silicon chip surface is avoided since the problem of being corroded and causing uneven surface is cleaned multiple times, the risk at silicon chip surface concave point is attached to so as to avoid pollutant, not only the yield of silicon wafer had been improved, but also has prevented the multiple potential damage caused by Si wafer quality of doing over again.
Description
Technical field
The present invention relates to the rework system of technical field of manufacturing semiconductors, especially silicon wafer and methods.
Background technique
Requirement of the technical field of manufacturing semiconductors to silicon wafer yield at present is higher and higher, and evenness of silicon wafer, damage of edges
Degree and particle pollution etc. all affect the yield of silicon wafer.
In order to improve the yield of silicon wafer, the prior art repeatedly does over again to non-non-defective unit, and common process of rework includes：Needle
It is inadequate to flatness to carry out twin polishing again, the progress edge polishing, dirty for surface particle again for edge breakage
Serious progress is contaminated finally to polish on surface again.However, the yield of silicon wafer will not only be improved by repeatedly doing over again, it instead can be to silicon wafer
Quality causes adverse effect, makes silicon chip surface seriously corroded, uneven, to cause more potential bad shadow to silicon wafer
It rings.
Therefore it provides a kind of reworking method and system for reducing silicon wafer polishing and wash number be those skilled in the art urgently
Problem to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of rework system of silicon wafer and methods, are done over again with solving silicon wafer in the prior art
The problem of number excessively causes yield to reduce.
In order to achieve the above object, the present invention provides a kind of rework systems of silicon wafer, including：Detection device, classification dress
It sets, burnishing device and cleaning device；
The detection device detects the silicon wafer completed the process one by one to judge its specifications parameter, if specifications parameter is equal
Reach preset value, be then divided into high-quality class, conversely, silicon wafer is then divided into flaw class；
The burnishing device polishes the silicon wafer for belonging to flaw type；
The cleaning device carries out prerinse to the silicon wafer after polishing, and the detection device carries out prewashed silicon wafer flat
Whole degree detection, and tentatively define the level；
The cleaning device cleans the silicon wafer after tentatively defining the level again, and the detection device carries out particle to it
The detection and deciding grade and level of dustiness, the sorter distinguish qualified silicon wafer and unqualified silicon wafer.
Optionally, in the rework system of the silicon wafer, the specifications parameter detected one by one to silicon wafer includes：Particle is dirty
Dye degree, edge integrity degree and surface smoothness.
Optionally, in the rework system of the silicon wafer, the burnishing device carries out the silicon wafer for belonging to flaw type
Polishing includes：
There is the silicon wafer of particle pollution flaw to carry out surface on surface finally to polish；
Silicon wafer defective for edge carries out edge polishing and surface finally polishes；
Silicon wafer defective for flatness carries out twin polishing and surface finally polishes.
The present invention also provides a kind of reworking method of silicon wafer, the reworking method of the silicon wafer includes the following steps：
S1：Take a silicon wafer completed the process；
S2：Silicon wafer is detected one by one to judge its specifications parameter, if specifications parameter reaches preset value, is divided into
High-quality class, conversely, being then divided into flaw class；
S3：The silicon wafer for belonging to flaw type is polished；
S4：Prerinse is carried out to the silicon wafer after polishing, and carries out flatness detection tentatively to define the level；
S5：Silicon wafer after tentatively defining the level is cleaned again, and carries out the detection of particle dustiness with further fixed
Grade, to determine qualified silicon wafer and unqualified silicon wafer.
Optionally, in the reworking method of the silicon wafer, in S2, the specifications parameter detected one by one to silicon wafer includes：
Particle dustiness, edge integrity degree and surface smoothness.
Optionally, in the reworking method of the silicon wafer, in executing S3, the polishing type is divided into twin polishing, side
Edge polishing and surface finally polish.
Optionally, in the reworking method of the silicon wafer, in S3, polishing process is：
There is the silicon wafer of particle pollution flaw to carry out surface on surface finally to polish；
Silicon wafer defective for edge carries out edge polishing and surface finally polishes；
Silicon wafer defective for flatness carries out twin polishing and surface finally polishes.
Optionally, in the reworking method of the silicon wafer, in S4, flatness detection, evaluation and test are carried out to prewashed silicon wafer
Polished treated the wrinkle grade of the silicon wafer out.
Optionally, in the reworking method of the silicon wafer, in S5, the inspection of particle dustiness is carried out to the silicon wafer cleaned again
It surveys, evaluates and tests out polished treated the cleaning requirements of the silicon wafer.
Optionally, in the reworking method of the silicon wafer, in S5, according to the wrinkle grade and cleaning requirements to described
Flaw silicon wafer is defined the level；For the silicon wafer of flatness and cleannes class requirement is still not achieved, it is determined that it is unqualified silicon
Piece.
In the rework system of silicon wafer provided by the invention, by the way that flaw silicon wafer is done over again and degraded simultaneously, reduce
The number that the flaw silicon wafer is done over again, while reducing the wash number of the silicon wafer, the silicon chip surface is avoided due to more
The problem of secondary cleaning is corroded and causes uneven surface, is attached to the wind at the silicon chip surface concave point so as to avoid pollutant
Danger, had not only improved the yield of the silicon wafer, but also prevent the multiple potential damage caused by Si wafer quality of doing over again；In addition in institute
During stating silicon wafer polishing, flatness, integrity degree and the cleannes of the silicon wafer are improved as far as possible, fundamentally improve institute
State the yield of silicon wafer.
Detailed description of the invention
Fig. 1 is the flow chart of the silicon wafer reworking method of the embodiment of the present invention；
Fig. 2 is that the silicon wafer of the embodiment of the present invention is done over again the flow chart of polishing process.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is the flow chart of the silicon wafer reworking method of the embodiment of the present invention；Fig. 2 is that the present invention is real
The silicon wafer for applying example is done over again the flow chart of polishing process.
The present invention provides a kind of rework systems of silicon wafer, including：Detection device, sorter, burnishing device and cleaning
Device；
The detection device detects the silicon wafer completed the process one by one to judge its specifications parameter, if specifications parameter is equal
Reach preset value, be then divided into high-quality class, conversely, silicon wafer is then divided into flaw class；
The burnishing device polishes the silicon wafer for belonging to flaw type；
The cleaning device carries out prerinse to the silicon wafer after polishing, and the detection device carries out prewashed silicon wafer flat
Whole degree detection, and tentatively define the level；
The cleaning device cleans the silicon wafer after tentatively defining the level again, and the detection device carries out particle to it
The detection and deciding grade and level of dustiness, the sorter distinguish qualified silicon wafer and unqualified silicon wafer.
The rework system of silicon wafer provided in the present invention is the carrier that the realization silicon wafer is done over again and control equipment.
In the rework system of the silicon wafer, the detection parameters detected one by one to the silicon wafer include：Particle pollution
Degree, edge integrity degree and surface smoothness judge its specifications parameter by detecting three of the above parameter, if specifications parameter reaches
Preset value is then divided into high-quality class, conversely, silicon wafer is then divided into flaw class.Preferably, the preset value can be rule of thumb
Value obtains, and just no longer preset value described in concrete regulation, the preset value generally can be used as the reference value of high-quality class silicon wafer here.
Further, the specifications parameter of the silicon wafer can be defined as：Such as high-quality class silicon wafer is set to a grade, slightly secondary one
The silicon wafer of point is set to two grades, and silicon wafer more again is set to three grades, and so on, reach some flaw value and is set to later
Substandard product.Described one, two, third level silicon wafer deciding grade and level parameter area can obtain based on experience value.Specifically, each etc.
Grade parameter value have a range, such as detect a certain silicon wafer surface smoothness and clean-up performance value a grade range
It is interior, but there is certain breakage at edge, and edge integrity degree is not up to the range of a grade parameter value, then the product is unsatisfactory for grade production
The specification of product, belongs to faulty materials, does over again.Only parameters value all reaches at or above the grade parameters value
When range, just it is set to the grade products.
Further, it does over again, is done over again including re-starting polishing to all kinds of flaw silicon wafers to the flaw silicon wafer.Institute
Stating polishing process is：There is the silicon wafer of particle pollution flaw to carry out surface on surface finally to polish；Silicon defective for edge
Piece carries out edge polishing and surface finally polishes；Silicon wafer defective for flatness carries out twin polishing and surface is finally thrown
Light.
In the rework system of the silicon wafer, first subseries of sorter provided in the present invention is excellent for distinguishing
Matter silicon wafer and flaw silicon wafer, the second subseries be used for distinguish qualified silicon wafer grade and unqualified silicon wafer.
Specifically, the yield of the silicon wafer is the ratio that qualified silicon wafer accounts for total production silicon wafer, the sorter first
Subseries is that silicon wafer high-quality and defective is classified, it is therefore an objective to allow product defective to do over again, polish again, be
The yield for improving the silicon wafer plays significant role；Second subseries of sorter is by qualified silicon wafer and unqualified silicon wafer
Classify, qualified silicon wafer is divided into different grades, improves the yield of the silicon wafer as far as possible.
Preferably, in the rework system of the silicon wafer, the burnishing device be used to carry out the silicon wafer twin polishing,
Edge polishing and surface finally polish.An important factor for influencing the silicon wafer yield is the surface smoothness of the silicon wafer, edge
Integrated degree, clean-up performance, in order to improve the yield of the silicon wafer, it is necessary to keep the silicon wafer surfacing, edge as far as possible complete
It is whole, surface particle pollutant is few, realization makes the silicon chip edge complete, surface cleaning and smooth.
The present invention also provides a kind of reworking methods of silicon wafer, include the following steps：
S1：Take a silicon wafer completed the process；
S2：Silicon wafer is detected one by one to judge its specifications parameter, if specifications parameter reaches preset value, is divided into
High-quality class, conversely, being then divided into flaw class；
S3：The silicon wafer for belonging to flaw type is polished；
S4：Prerinse is carried out to the silicon wafer after polishing, and carries out flatness detection tentatively to define the level；
S5：Silicon wafer after tentatively defining the level is cleaned again, and carries out the detection of particle dustiness with further fixed
Grade, to determine qualified silicon wafer and unqualified silicon wafer.
Situations such as there are surfaces in general silicon wafer not smooth enough, edge breakage, particle pollution, these flaws on silicon wafer are just
Can make the yield of the silicon wafer reduces, and the yield of the silicon wafer had not only can be improved in the reworking method of silicon wafer provided by the invention, but also
The potential damage caused by the silicon wafer of doing over again can be reduced.
As shown in Figure 1, firstly, execute step S100, take a silicon wafer completed the process, it is in the embodiment of the present application, described
The silicon wafer completed the process mainly includes the silicon wafer for tentatively having completed manufacture, that is, have passed through crystal pulling and cutting etc., in the prior art,
Usually using this silicon wafer as substrate, subsequent semiconductor devices is made.
Then step S200 is executed, the silicon wafer is detected.Rule common, that the silicon wafer is detected one by one
Lattice parameter includes：Particle dustiness, edge integrity degree and surface smoothness judge the silicon wafer by detecting three of the above parameter
Reach preset value, if there are flaws at this three aspect.Specifically, defining the silicon wafer these three parameters in each grade should reach
The value arrived；In the detection process, the silicon wafer is detected one by one；Obtain the value for being detected all kinds of parameters of silicon wafer.Preferably
, the preset value can obtain based on experience value, and just no longer preset value described in concrete regulation, the preset value generally may be used here
Using the reference value as high-quality class silicon wafer.
Further, the specifications parameter of the silicon wafer can be defined as：Such as high-quality class silicon wafer is set to a grade, slightly secondary one
The silicon wafer of point is set to two grades, and silicon wafer more again is set to three grades, and so on, reach some flaw value and is set to later
Substandard product.Described one, two, third level silicon wafer deciding grade and level parameter area can obtain based on experience value.Specifically, each etc.
Grade parameter value have a range, such as detect a certain silicon wafer surface smoothness and clean-up performance value a grade range
It is interior, but there is certain breakage at edge, and edge integrity degree is not up to the range of a grade parameter value, then the product is unsatisfactory for grade production
The specification of product, belongs to faulty materials, does over again.Only parameters value all reaches at or above the grade parameters value
When range, just it is set to the grade products.
Then, step S310 and S320 are executed, step S310 is to will test good silicon wafer to be included in first-class level silicon wafer class, institute
State a grade refer to the specification of the silicon wafer with respect to the more good grade of flaw silicon wafer, a grade silicon described in the embodiment of the present application
Piece is high-quality silicon wafer, without doing over again again；Step S320 is classified by the flaw of the silicon wafer, and surface blemish eka-silicon is divided into
Piece, edge faults class silicon wafer and surface contamination class silicon wafer, if the silicon wafer containing multinomial flaw can be divided into more flaw class silicon wafers.
Then step S400 is executed, is done over again to the flaw silicon wafer, specifically, with reference to Fig. 2, to all kinds of flaw silicon wafers
Re-start polishing.The polishing process is：There is the silicon wafer of particle pollution flaw to carry out surface on surface finally to polish；For
Edge silicon wafer defective carries out edge polishing and surface finally polishes；Silicon wafer defective for flatness carries out twin polishing
It is finally polished with surface.
Specifically, there is the silicon wafer of fume for surface, step S411 is executed, changes the silicon chip carrier, then
Step S412 is executed, surface is re-started to the silicon wafer and is finally polished, then executes step S413, the silicon wafer is carried out pre-
Cleaning then executes step S414, carries out flatness detection to the silicon wafer, and evaluating and testing out the silicon wafer, polished that treated is flat
Then whole degree grade executes step S415, is finally cleaned to the silicon wafer, step S416 is finally executed, to the silicon wafer
The detection of particle dustiness is carried out, polished treated the cleaning requirements of the silicon wafer are evaluated and tested out.
Further, for the silicon wafer of damage of edges, step S421 is executed, changes the silicon chip carrier, then executes step
Rapid S422 and S423, re-starts edge polishing and surface to the silicon wafer and finally polishes, and step S424 is then executed, to described
Silicon wafer carries out prerinse, then executes step S425, carries out flatness detection to the silicon wafer, it is polished to evaluate and test out the silicon wafer
Then treated wrinkle grade executes step S426, is finally cleaned to the silicon wafer, finally execution step S427,
The detection of particle dustiness is carried out to the silicon wafer, evaluates and tests out polished treated the cleaning requirements of the silicon wafer.
Further, have silicon wafer defective for surface smoothness, execute step S431, change the silicon chip carrier,
Then step S432 and S433 are executed, twin polishing and surface are re-started to the silicon wafer and finally polished, step is then executed
S434, carries out prerinse to the silicon wafer, then executes step S435, carries out flatness detection to the silicon wafer, evaluates and tests out institute
Polished treated the wrinkle grade of silicon wafer is stated, step S436 is then executed, the silicon wafer is finally cleaned, is finally held
Row step S437 carries out the detection of particle dustiness to the silicon wafer, evaluates and tests out polished treated the cleaning requirements of the silicon wafer.
Further, for the silicon wafer with multiclass flaw, step S441 is executed, changes the silicon chip carrier, then holds
Row step S442, S443 and S444 re-start edge polishing, twin polishing and surface to the silicon wafer and finally polish, then
Step S445 is executed, prerinse is carried out to the silicon wafer, then executes step S446, flatness detection is carried out to the silicon wafer,
Polished treated the wrinkle grade of the silicon wafer is evaluated and tested out, step S447 is then executed, the silicon wafer is carried out final clear
It washes, finally executes step S448, the detection of particle dustiness is carried out to the silicon wafer, evaluating and testing out the silicon wafer, polished treated
Cleaning requirements.
The above process is the process of rework to the flaw silicon wafer, reworking method through the embodiment of the present invention, according to institute
The specific defect for stating silicon wafer is done over again, and process of doing over again is reduced, and effectively raises the yield of the silicon wafer, and doing over again
Reduce the cleaning to the silicon wafer in the process, avoids to be cleaned multiple times and the silicon wafer is caused potentially to damage.
Then, step S500 is executed, the silicon wafer after doing over again is judged, according to the wrinkle grade and cleaning
Grade degrades to the flaw silicon wafer；For the silicon wafer of flatness and cleannes class requirement is still not achieved, it is determined that its
For unqualified silicon wafer.
Then step S610 and S620 are executed, after judging by previous step the silicon wafer, to the flaw
Silicon wafer carries out degradation deciding grade and level.Specifically, if the particle dustiness of the silicon wafer, edge integrity degree and surface smoothness parameter value all
When reaching at or above the range of two three parameter values of grade, it is determined as second-class level silicon wafer；If three kinds of parameter values of the silicon wafer are all
When reaching at or above the range of three three kinds of parameter values of grade, it is determined as third level silicon wafer；If cannot still reach flatness, complete
The silicon wafer that degree and cleannes require, it is determined that be unqualified silicon wafer.
To sum up, in the rework system of silicon wafer provided in an embodiment of the present invention, by doing over again simultaneously to flaw silicon wafer
And degradation, the number that the flaw silicon wafer is done over again is reduced, while reducing the wash number of the silicon wafer, avoids the silicon wafer
Surface is attached to the silicon chip surface since the problem of being corroded and causing uneven surface is cleaned multiple times, so as to avoid pollutant
Risk at concave point, had not only improved the yield of the silicon wafer, but also prevented the multiple potential damage caused by Si wafer quality of doing over again
Evil；The silicon chip surface will be carried out most additionally by the silicon wafer polishing, and after twin polishing or edge polishing
Final polishing improves flatness, integrity degree and the cleannes of the silicon wafer as far as possible, fundamentally improves the good of the silicon wafer
Rate.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of rework system of silicon wafer, which is characterized in that including：Detection device, sorter, burnishing device and cleaning dress
It sets；
The detection device detects the silicon wafer completed the process one by one to judge its specifications parameter, if specifications parameter reaches
Preset value is then divided into high-quality class, conversely, silicon wafer is then divided into flaw class；
The burnishing device polishes the silicon wafer for belonging to flaw type；
The cleaning device carries out prerinse to the silicon wafer after polishing, and the detection device carries out flatness to prewashed silicon wafer
Detection, and tentatively define the level；
The cleaning device cleans the silicon wafer after tentatively defining the level again, and the detection device carries out particle pollution to it
The detection and deciding grade and level of degree, the sorter distinguish qualified silicon wafer and unqualified silicon wafer.
2. the rework system of silicon wafer as described in claim 1, which is characterized in that the specifications parameter detected one by one to silicon wafer
Including：Particle dustiness, edge integrity degree and surface smoothness.
3. the rework system of silicon wafer as claimed in claim 2, which is characterized in that the burnishing device is to belonging to flaw type
Silicon wafer carry out polishing include：
There is the silicon wafer of particle pollution flaw to carry out surface on surface finally to polish；
Silicon wafer defective for edge carries out edge polishing and surface finally polishes；
Silicon wafer defective for flatness carries out twin polishing and surface finally polishes.
4. a kind of reworking method of silicon wafer, which is characterized in that the reworking method of the silicon wafer includes the following steps：
S1：Take a silicon wafer completed the process；
S2：Silicon wafer is detected one by one to judge its specifications parameter, if specifications parameter reaches preset value, is divided into high-quality
Class, conversely, being then divided into flaw class；
S3：The silicon wafer for belonging to flaw type is polished；
S4：Prerinse is carried out to the silicon wafer after polishing, and carries out flatness detection tentatively to define the level；
S5：Silicon wafer after tentatively defining the level is cleaned again, and carries out the detection of particle dustiness further to define the level, with
Determine qualification silicon wafer and unqualified silicon wafer.
5. the reworking method of silicon wafer as claimed in claim 4, which is characterized in that in S2, rule that silicon wafer is detected one by one
Lattice parameter includes：Particle dustiness, edge integrity degree and surface smoothness.
6. the reworking method of silicon wafer as claimed in claim 4, which is characterized in that in executing S3, the polishing type is divided into
Twin polishing, edge polishing and surface finally polish.
7. the reworking method of silicon wafer as claimed in claim 6, which is characterized in that in S3, polishing process is：
There is the silicon wafer of particle pollution flaw to carry out surface on surface finally to polish；
Silicon wafer defective for edge carries out edge polishing and surface finally polishes；
Silicon wafer defective for flatness carries out twin polishing and surface finally polishes.
8. the reworking method of silicon wafer as claimed in claim 4, which is characterized in that in S4, carried out to prewashed silicon wafer smooth
Polished treated the wrinkle grade of the silicon wafer is evaluated and tested out in degree detection.
9. the reworking method of silicon wafer as claimed in claim 8, which is characterized in that in S5, carried out to the silicon wafer cleaned again micro-
Grain dustiness detection, evaluates and tests out polished treated the cleaning requirements of the silicon wafer.
10. the reworking method of silicon wafer as claimed in claim 9, which is characterized in that in S5, according to the wrinkle grade and clearly
Clean grade defines the level to the flaw silicon wafer；For the silicon wafer of flatness and cleannes class requirement is still not achieved, it is determined that
It is unqualified silicon wafer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112529357A (en) * | 2020-11-03 | 2021-03-19 | 特劢丝软件科技(上海)有限公司 | Silicon wafer grading method, system, electronic device and computer readable storage medium |
| CN115816261A (en) * | 2022-12-12 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | Silicon wafer processing method and device |
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| CN115816261A (en) * | 2022-12-12 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | Silicon wafer processing method and device |
| TWI849746B (en) * | 2022-12-12 | 2024-07-21 | 大陸商西安奕斯偉材料科技股份有限公司 | Silicon wafer processing method and device |
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