CN107978642B - GaN-based heterojunction diode and preparation method thereof - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000011241 protective layer Substances 0.000 claims abstract description 10
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
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- H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
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Abstract
The invention discloses a GaN-based heterojunction diode and a preparation method thereof, wherein the GaN-based heterojunction diode comprises: a GaN intrinsic layer and a barrier layer sequentially grown on the substrate; forming a partial groove region on part of the barrier layer, wherein the high-hole-concentration structural layer covers the upper surface of the groove; the cathode electrode is positioned in a partial area of the upper surface of the barrier layer, which is not covered by the high-hole-concentration structural layer; the first part of the anode electrode is positioned in the other part of the upper surface of the barrier layer which is not covered by the high-hole-concentration structural layer, and the position of the first part of the anode electrode is close to the high-hole-concentration structural layer; the second part of the anode electrode covers the upper surface of the high-hole-concentration structural layer; the passivation protective layer covers the upper surface of the barrier layer in the area not covered by the cathode electrode and the anode electrode. The GaN heterojunction diode has high reliability and good repeatability, can realize the adjustment of the starting voltage of a device, and obtains the GaN heterojunction diode with low starting voltage and low reverse leakage current.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a GaN-based heterojunction diode with a novel p-type multi-element nitride alloy with gradually-changed components added on a GaN heterojunction structure and a preparation method thereof.
Background
The GaN material has the characteristics of large forbidden band width, high critical breakdown electric field, high heat conductivity and the like, and has unique advantages in the aspect of preparing high-voltage, high-temperature, high-power and high-density integrated electronic devices.
The GaN material can form a heterojunction structure with AlGaN, InAlN and other materials. Due to spontaneous polarization and piezoelectric polarization effects of materials such as AlGaN or InAlN, a two-dimensional electron gas (2DEG) with high concentration and high mobility is formed at the heterojunction interface. The characteristic can not only improve the carrier mobility and the working frequency of the GaN-based device, but also reduce the on-resistance and the switching delay of the device.
The GaN-based diode has the characteristics of high breakdown property, high switching speed and the like, and has wide application prospects in the power electronic fields of power management, wind power generation, solar cells, electric vehicles and the like. The GaN-based heterojunction Schottky diode has the advantages of high switching speed, high reverse voltage, high efficiency, small loss and huge market application prospect in the range of 600V-1200V devices. However, the GaN-based schottky diode has the following disadvantages:
1. the forward turn-on voltage is high and non-adjustable. The forward turn-on voltage of the conventional GaN schottky diode is generally fixed at about 1V and cannot be adjusted due to the limitation of schottky barrier.
2. The reverse leakage current is large. Due to the characteristics of small Schottky barrier height and the like, the reverse leakage current of the Schottky diode is obviously higher than that of a pn junction diode, so that the breakdown voltage of the GaN-based Schottky diode is reduced.
In view of these disadvantages, researchers have proposed that schottky diodes are fabricated by using a high-low work function metal layer mixed anode, an F ion implantation technique under schottky, a groove anode, and other methods, which can effectively reduce the turn-on voltage of the schottky diode, but cannot effectively reduce the reverse leakage current of the device, effectively reduce the turn-on voltage and the reverse leakage current of the GaN diode, and improve the breakdown voltage.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a GaN-based heterojunction diode and a preparation method thereof.
In order to achieve one aspect of the above objects, the present invention provides a GaN-based heterojunction diode comprising: a substrate; a GaN intrinsic layer formed on the substrate; the barrier layer is formed on the GaN intrinsic layer, and a mesa graph is formed on the barrier layer and the GaN intrinsic layer so as to be isolated from other GaN diodes; a passivation layer formed on the barrier layer and the mesa pattern; the high-hole-concentration structural layer is formed in a groove area, and the groove area is formed by patterning the passivation protective layer and the barrier layer; the cathode electrode is formed in a partial area, which is not covered by the high-hole-concentration structural layer and the passivation protective layer, on the upper surface of the barrier layer; the first part of the anode electrode is formed in the other part of the area, which is not covered by the high-hole-concentration structural layer and the passivation protective layer, on the upper surface of the barrier layer and is close to the high-hole-concentration structural layer; and the second part of the anode electrode covers the upper surface of the high-hole-concentration structural layer.
In the scheme, the thickness of the GaN intrinsic layer is 50nm-10 mu m.
In the scheme, the barrier layer is made of AlN, InN, AlGaN, InGaN or InAlN and has a thickness of 5nm-1 μm.
In the above scheme, the groove depth of the groove region is less than or equal to the thickness of the barrier layer and may be 0 nm.
In the scheme, the high-hole-concentration structural layer is made of p-type nitride multi-element alloy with gradually changed Al components, and the maximum doping concentration of the p-type nitride of the high-hole-concentration structural layer is 105-1022/cm-3。
In the scheme, the passivation protective layer is made of SiO2、Si3N4、AlN、Al2O3、MgO、Sc2O3、TiO2、HfO2、BCB、ZrO2、Ta2O5Or La2O3The thickness is 5nm-1 μm.
In order to achieve another aspect of the above objects, the present invention also provides a method for manufacturing a GaN-based diode, the method comprising: step 1: growing a GaN intrinsic layer on a substrate; step 2: growing a barrier layer on the GaN intrinsic layer; and step 3: forming a mesa pattern on the barrier layer and the GaN intrinsic layer; and 4, step 4: forming a passivation protective layer on the barrier layer and the mesa pattern; and 5: patterning the passivation protection layer to obtain a first pattern area; step 6: patterning the barrier layer in the first pattern area to form a groove area; and 7: selectively regenerating the long high-hole-concentration structural layer in the groove region; and 8: patterning the passivation protection layer to obtain a second pattern and a third pattern; and step 9: preparing a cathode electrode in the second graph, preparing a first part of an anode electrode in the third graph, and annealing by using a high-temperature alloy to form ohmic contact among the cathode electrode, the first part of the anode electrode and the barrier layer; step 10: and preparing a second part of the anode electrode on the high-hole-concentration structural layer, and annealing by using high-temperature alloy to form Schottky contact or ohmic contact between the second part of the anode electrode and the high-hole-concentration structural layer.
In the scheme, the mesa height of the mesa graph in the step 3 is more than or equal to the thickness of the barrier layer.
In the above scheme, the groove depth of the groove region in step 6 is less than or equal to the thickness of the barrier layer and may be 0 nm.
In the above scheme, the high hole concentration structure layer in step 7 is made of p-type nitride multi-element alloy with gradually changed Al component.
According to the technical scheme, the invention has the following beneficial effects:
1. according to the GaN-based heterojunction diode and the preparation method thereof, the two-dimensional electron gas can be recovered and the channel can be conducted under different forward voltages by selecting the high-hole-concentration structural layers with different groove depths, different component gradient ranges, different nitride alloys and doping concentrations and thicknesses thereof, so that the forward starting voltage of the diode can be adjusted, and the prepared device can meet different requirements.
2. The GaN-based heterojunction diode and the preparation method thereof provided by the invention have the advantages that on the basis of an Al (in) GaN/GaN structure, a groove structure is formed, and a high-hole-concentration structure layer is added, wherein the structure adopts p-type nitride multicomponent alloy with gradually-changed Al components, and can form a pn junction with a barrier layer, so that when the diode is in reverse bias, the pn junction is reversely biased, the reverse leakage current of a device is effectively reduced, and the breakdown voltage of the diode is improved.
3. The GaN-based heterojunction diode and the preparation method thereof provided by the invention have the advantages of high reliability and good repeatability, can realize the adjustment of the starting voltage of a device, and obtain the GaN-based heterojunction diode with low starting voltage and low reverse leakage current.
Drawings
Fig. 1 is a schematic structural diagram of a GaN-based heterojunction diode according to an embodiment of the invention;
fig. 2-10 are flow charts of processes for fabricating GaN-based heterojunction diodes according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Fig. 1 is a schematic structural diagram of a GaN-based heterojunction diode according to an embodiment of the present invention, as shown in fig. 1, in an embodiment of the present invention, the GaN-based heterojunction diode includes:
the substrate 100, the substrate 100 can be selected from substrate materials such as GaN, sapphire, Si, diamond or SiC;
a GaN intrinsic layer 200 formed on the substrate 100, wherein the GaN intrinsic layer 200 has a thickness of 50nm-10 μm;
the barrier layer 300 is formed on the GaN intrinsic layer 200, a mesa graph is formed on the barrier layer 300 and the GaN intrinsic layer 200 to be isolated from other GaN diodes, and the mesa height of the mesa graph is larger than or equal to the thickness of the barrier layer 300; the barrier layer 300 can be made of AlN, InN, AlGaN, InGaN or InAlN and has a thickness of 5nm-1 μm;
a passivation protection layer 400 formed on the barrier layer 300 and the mesa pattern; the thickness of the passivation protection layer 400 is 5nm-1 μm; the passivation layer 400 may be made of SiO2、Si3N4、AlN、Al2O3、MgO、Sc2O3、TiO2、HfO2、BCB、ZrO2、Ta2O5Or La2O3And the like;
the high-hole-concentration structural layer 500 is formed in a groove region, the groove region is formed by patterning the passivation layer 400 and the barrier layer 300, the groove depth of the groove region is less than or equal to the thickness of the barrier layer 300, and the groove depth can be 0 nm; the high-hole-concentration structure layer 500 is made of p-type nitride multicomponent alloy with gradually changed Al component, such as AlGaN, InGaN, InAlN, AlInGaN, etc.; the maximum doping concentration of the p-type nitride of the high hole concentration structure layer 500 is 105-1022/cm-3；
A cathode electrode 611 formed on a partial region of the upper surface of the barrier layer 300 not covered by the high hole concentration structure layer 500 and the passivation protection layer 400;
a first anode electrode portion 612 formed on another portion of the upper surface of the barrier layer 300 not covered by the high hole concentration structure layer 500 and the passivation protection layer 400, and adjacent to the high hole concentration structure layer 500;
an anode electrode second portion 613 covering the upper surface of the high hole concentration structure layer 500;
the cathode 611, the anode first portion 612, and the anode second portion 613 may be made of Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW, TiN, or any combination thereof.
In fig. 1, passivation protection layer 400 covers the upper surface of barrier layer 300 in the areas not covered by high hole concentration structure layer 500, cathode electrode 611, anode electrode first portion 612, and anode electrode second portion 613, and covers the end surfaces of barrier layer 300, a portion of the end surfaces of GaN intrinsic layer 200, and a portion of the upper surface of GaN intrinsic layer 200. Ohmic contacts are formed between the cathode electrode 611, the anode electrode first portion 612 and the barrier layer 300, and schottky contacts or ohmic contacts are formed between the anode metal electrode second portion 613 and the high hole concentration structural layer 500.
In the figure 1, a groove structure is formed on the basis of an Al (in) GaN/GaN structure, a high-hole-concentration structure layer is added, the structure adopts p-type nitride multicomponent alloy with gradually changed Al components, a pn junction can be formed with a barrier layer, and when a diode is in reverse bias, the pn junction is reversely biased, so that the reverse leakage current of the device is effectively reduced, and the breakdown voltage of the diode is improved.
Based on the schematic structural diagram of the GaN-based heterojunction diode shown in fig. 1, fig. 2 to 10 are flow charts of the manufacturing process of the GaN-based heterojunction diode according to an embodiment of the present invention, in which the manufacturing method of the GaN-based heterojunction diode includes the following steps:
step 1, growing an intrinsic layer 200 of GaN on a substrate 100, as shown in fig. 2;
the substrate 100 may be selected from substrate materials such as GaN, sapphire, Si, diamond, or SiC.
Wherein the thickness of the GaN intrinsic layer 200 is 50nm-10 μm.
Step 2, growing a barrier layer 300 on the GaN intrinsic layer 200, as shown in fig. 2;
the barrier layer 300 may be made of AlN, InN, AlGaN, InGaN, or InAlN.
Wherein the barrier layer 300 has a thickness of 5nm to 1 μm.
Step 3, forming a mesa pattern 301 on the barrier layer 300 and the GaN intrinsic layer 200 to isolate other GaN diodes, as shown in fig. 3;
in an embodiment of the present invention, the mesa pattern 301 is formed using ion implantation, photolithography, and plasma dry etching techniques.
In this step, the mesa height of the mesa pattern 301 is greater than or equal to the thickness of the barrier layer 300.
Step 4, forming a passivation protection layer 400 on the barrier layer 300 and the mesa pattern 301, as shown in fig. 4;
in this step, the passivation protection layer 400 may be formed by a common process such as deposition, wherein the passivation protection layer 400 may be deposited by sputtering or chemical vapor deposition.
Wherein the passivation protection layer 400 has a thickness of 5nm to 1 μm.
The passivation layer 400 may be made of SiO2、Si3N4、AlN、Al2O3、MgO、Sc2O3、TiO2、HfO2、BCB、ZrO2、Ta2O5Or La2O3And the like.
Step 5, patterning the passivation protection layer 400 to obtain a first pattern 401, as shown in fig. 5;
in an embodiment of the present invention, the passivation layer 400 is patterned by using photolithography, a plasma dry etching technique, or a wet etching technique.
Step 6, forming a groove area 402 on the barrier layer in the first pattern 401 area, wherein the groove depth is less than or equal to the thickness of the barrier layer 300 and can be 0nm, as shown in fig. 6;
in an embodiment of the invention, the barrier layer is recessed by using photolithography, a plasma dry etching technique or a wet etching technique.
Step 7, selectively regenerating a long high-hole-concentration structural layer 500 in the groove region 402, as shown in fig. 7;
in an embodiment of the present invention, the high hole concentration structure layer 500 is made of p-type nitride multi-component alloy with gradually changed Al composition, such as AlGaN, InGaN, InAlN, AlInGaN, and the like.
Wherein the maximum doping concentration of the p-type nitride of the high hole concentration structure layer 500 is 105-1022/cm-3。
In an embodiment of the present invention, the high hole concentration structure layer 500 is formed in the groove 402 by growing and depositing, such as Metal Oxide Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and/or Atomic Layer Deposition (ALD).
Step 8, patterning the passivation layer 400 to obtain a second pattern 601 and a third pattern 602, as shown in fig. 8;
in an embodiment of the present invention, the passivation layer 400 is patterned by using photolithography, a plasma dry etching technique, or a wet etching technique.
Step 9, preparing a cathode electrode 611 and an anode electrode first portion 612 in the second pattern 601 and the third pattern 602 respectively, as shown in fig. 9, and performing high temperature alloy annealing to form ohmic contact between the cathode electrode 611 and the anode electrode first portion 612 and the barrier layer 300;
in one embodiment of the present invention, the metal electrodes are fabricated using photolithography, electron beam evaporation, or sputtering techniques.
The cathode electrode 611 and the anode electrode first portion 612 can be made of Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW, TiN, or any combination thereof.
Step 10, preparing an anode electrode second portion 613 on the high-hole-concentration structural layer 500, as shown in fig. 10, and annealing the anode electrode second portion 613 and the high-hole-concentration structural layer 500 by using a high-temperature alloy to form a schottky contact or an ohmic contact;
in one embodiment of the present invention, the metal electrodes are fabricated using photolithography, electron beam evaporation, or sputtering techniques.
The anode electrode second portion 613 may be made of Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW, TiN, or any combination thereof.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
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| CN108962976B (en) * | 2018-06-29 | 2024-10-11 | 捷捷半导体有限公司 | Thin barrier GaN SBD device based on nanochannel array and its preparation method |
| CN110783413B (en) * | 2019-11-08 | 2023-05-09 | 中国电子科技集团公司第十三研究所 | Preparation method of gallium oxide with transverse structure and gallium oxide with transverse structure |
| US11942560B2 (en) | 2020-08-13 | 2024-03-26 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device structures and methods of manufacturing the same |
| WO2022110007A1 (en) * | 2020-11-27 | 2022-06-02 | 苏州晶湛半导体有限公司 | Schottky diode and manufacturing method therefor |
| WO2022110006A1 (en) * | 2020-11-27 | 2022-06-02 | 苏州晶湛半导体有限公司 | Schottky diode |
| CN113659013A (en) * | 2021-06-29 | 2021-11-16 | 西安电子科技大学 | Schottky diode with p-type oxide dielectric composite mixed anode and manufacturing method thereof |
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| CN104362181A (en) * | 2014-11-03 | 2015-02-18 | 苏州捷芯威半导体有限公司 | GaN hetero-junction diode device and method for manufacturing same |
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