CN107955973A - A kind of etching method of battery monocrystalline silicon piece - Google Patents
A kind of etching method of battery monocrystalline silicon piece Download PDFInfo
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- CN107955973A CN107955973A CN201711030295.7A CN201711030295A CN107955973A CN 107955973 A CN107955973 A CN 107955973A CN 201711030295 A CN201711030295 A CN 201711030295A CN 107955973 A CN107955973 A CN 107955973A
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- texturing
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 title description 4
- 235000012431 wafers Nutrition 0.000 claims abstract description 22
- 239000000654 additive Substances 0.000 claims abstract description 19
- 230000000996 additive effect Effects 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229920001577 copolymer Polymers 0.000 claims abstract description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004698 Polyethylene Substances 0.000 claims abstract description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 7
- 239000004743 Polypropylene Substances 0.000 claims abstract description 7
- -1 polyethylene Polymers 0.000 claims abstract description 7
- 229920000573 polyethylene Polymers 0.000 claims abstract description 7
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 7
- 229920001155 polypropylene Polymers 0.000 claims abstract description 7
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 claims abstract description 7
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims abstract description 6
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 5
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 5
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 5
- DBBAUITUQRZERI-UHFFFAOYSA-N 2-ethenyl-1h-imidazole;1-ethenylpyrrolidin-2-one Chemical compound C=CC1=NC=CN1.C=CN1CCCC1=O DBBAUITUQRZERI-UHFFFAOYSA-N 0.000 claims abstract 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims 1
- 229910001950 potassium oxide Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 36
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229960001484 edetic acid Drugs 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000004280 Sodium formate Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- HLBBKKJFGFRGMU-UHFFFAOYSA-M sodium formate Chemical compound [Na+].[O-]C=O HLBBKKJFGFRGMU-UHFFFAOYSA-M 0.000 description 2
- 235000019254 sodium formate Nutrition 0.000 description 2
- WTHXTWHYLIZJBH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O WTHXTWHYLIZJBH-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000085 cashmere Anatomy 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供一种电池用单晶硅片的制绒方法，该制绒方法包括如下步骤：将乙烯基吡咯烷酮‑乙烯基咪唑的共聚物，聚乙二醇‑聚丙二醇‑聚乙二醇共聚物，乙二胺四乙酸，单乙醇胺，苯甲酸钠，对甲苯磺酸钠溶解到余量的水中；将步骤1）制得的制绒添加剂加到碱溶液中，混合均匀；将单晶硅片置入步骤2）制得的制绒液中进行制绒，该方法在对单晶硅片进行制绒时，将本专利中的制绒添加剂按照一定比例加入到碱液中，即可实现快速制绒效果。The invention provides a method for making texture of a monocrystalline silicon wafer for batteries. The method for making texture comprises the following steps: a copolymer of vinylpyrrolidone-vinylimidazole, a copolymer of polyethylene glycol-polypropylene glycol-polyethylene glycol , ethylenediaminetetraacetic acid, monoethanolamine, sodium benzoate, and sodium p-toluenesulfonate are dissolved in the remaining water; the texturing additive prepared in step 1) is added to the alkali solution and mixed evenly; the monocrystalline silicon wafer is placed Into the texturing solution prepared in step 2) for texturing. In this method, when texturing monocrystalline silicon wafers, the texturing additive in this patent is added to the alkali solution according to a certain proportion, and rapid production can be realized. velvet effect.
Description
技术领域technical field
本发明涉及太阳光伏电池技术领，尤其涉及一种电池用单晶硅片的制绒方法。The invention relates to the technical field of solar photovoltaic cells, in particular to a texturing method for monocrystalline silicon wafers for cells.
背景技术Background technique
碱液对单晶硅片的[100]晶面蚀刻较快，而对[111]晶面的蚀刻较慢。由此而产生的蚀刻速率差将会导致在使用碱液对硅片进行蚀刻的过程中单晶硅片表面会形成金字塔结构。该结构能有效减少硅片对光的反射。在太阳能电池片的制备过程中，硅片对光的反射越低，硅片对光的吸收越多，太阳能电池转换效率也越高。通过上述碱液蚀刻的方法对单晶硅片表面进行织构化处理是常用的增加晶体硅对光的吸收的有效途径之一。现有的单晶硅制绒工艺通常需要600 s-900 s的制绒时间，效率较低，如果能缩短制绒时间，将能有效提高生产效率。本专利的制绒添加剂可极大的缩短制绒时间，且制绒后单晶硅表面的金字塔的尺寸大小和分布与常规工艺接近。The alkali solution etches the [100] crystal plane of the single crystal silicon wafer faster, but etches the [111] crystal plane slowly. The resulting difference in etching rate will lead to the formation of a pyramid structure on the surface of the single crystal silicon wafer during the process of etching the silicon wafer with alkaline solution. The structure can effectively reduce the light reflection of the silicon wafer. In the preparation process of solar cells, the lower the reflection of silicon wafers to light, the more the absorption of light by silicon wafers, and the higher the conversion efficiency of solar cells. Texturing the surface of a single crystal silicon wafer by the above alkali etching method is one of the commonly used effective ways to increase the light absorption of crystalline silicon. The existing monocrystalline silicon texturing process usually requires a texturing time of 600 s-900 s, and the efficiency is low. If the texturing time can be shortened, the production efficiency will be effectively improved. The texturing additive of this patent can greatly shorten the texturing time, and the size and distribution of the pyramids on the surface of monocrystalline silicon after texturing are close to those of the conventional process.
发明内容Contents of the invention
本发明提供一种电池用单晶硅片的制绒方法，该方法在对单晶硅片进行制绒时，将本专利中的制绒添加剂按照一定比例加入到碱液中，即可实现快速制绒效果，制绒时间为300s-420s。该制绒方法包括如下步骤： 1）制绒添加剂的配置：依次将乙烯基吡咯烷酮-乙烯基咪唑的共聚物1份，聚乙二醇-聚丙二醇-聚乙二醇共聚物2份，乙二胺四乙酸0.1份，单乙醇胺0.5份，苯甲酸钠 0.05份，对甲苯磺酸钠 0.5份溶解到100份水中，混合均匀；2）制绒液的配置：将步骤1）制得的制绒添加剂加到氢氧化钾水溶液中，混合均匀；所述的制绒添加剂与碱溶液的质量比为1:100，所述的氢氧化钾水溶液的质量分数为1.5%；3）将单晶硅片置入步骤2）制得的制绒液中进行制绒，制绒温度为75~88oC，制绒时间为300~420 s。The invention provides a method for making texturing of monocrystalline silicon wafers for batteries. In this method, when texturing monocrystalline silicon wafers, the texturing additive in this patent is added to the lye according to a certain proportion, so that rapid Texture effect, the texturing time is 300s-420s. The texturing method includes the following steps: 1) Configuration of texturing additives: 1 part of vinylpyrrolidone-vinylimidazole copolymer, 2 parts of polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, ethylene glycol Dissolve 0.1 part of amine tetraacetic acid, 0.5 part of monoethanolamine, 0.05 part of sodium benzoate, and 0.5 part of sodium p-toluenesulfonate into 100 parts of water, and mix well; Add it to potassium hydroxide aqueous solution and mix evenly; the mass ratio of the described texturizing additive to the alkali solution is 1:100, and the mass fraction of the potassium hydroxide aqueous solution is 1.5%; 3) Put the monocrystalline silicon wafer in Put it into the texturing solution prepared in step 2) for texturing, the texturing temperature is 75-88 o C, and the texturing time is 300-420 s.
与现有技术相比，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
本发明提供的单晶硅片制绒方法可快速对单晶硅片进行表面制绒，制绒时间较常规工艺缩短50%以上；且在制绒过程中无需补加制绒添加剂，在提高制绒效率的同时降低成本。同时，本专利的制绒添加剂无毒性、无腐蚀性，对人体和环境无危害。The monocrystalline silicon wafer texturing method provided by the present invention can quickly texturize the surface of a single crystal silicon wafer, and the texturing time is shortened by more than 50% compared with the conventional process; Reduce costs while increasing cashmere efficiency. At the same time, the texture additive of this patent is non-toxic, non-corrosive, and harmless to human body and environment.
本发明的优点还在于：快速制绒后得到的绒面金字塔的尺寸较小，分布较窄，对光的反射率低，经组装得到的太阳能电池片的光电转换效率高。该添加剂成本较低，效率较高，效果显著，具有极佳的实用价值。The present invention also has the advantages that the textured pyramids obtained after rapid texturing have small size, narrow distribution, low light reflectivity, and high photoelectric conversion efficiency of the assembled solar cells. The additive has low cost, high efficiency, remarkable effect and excellent practical value.
附图说明Description of drawings
图1为本发明提供的制绒方法得到的单晶硅表面的金字塔1；Fig. 1 is the pyramid 1 on the monocrystalline silicon surface that the texturing method provided by the present invention obtains;
图2为本发明提供的制绒方法得到的单晶硅表面的金字塔2。Fig. 2 is a pyramid 2 on the surface of monocrystalline silicon obtained by the texturing method provided by the present invention.
具体实施方式Detailed ways
实施例1Example 1
工艺步骤如下：The process steps are as follows:
1. 配置制绒添加剂：将0.5 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物（数均分子量为），1 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，0.5 g乙二胺四乙酸，2 g单乙醇胺，0.1 g苯甲酸钠和0.25 g对甲苯磺酸钠依次溶解到100 ml去离子水中。1. Configure texturing additives: 0.5 g of vinylpyrrolidone-vinylimidazole copolymer (number average molecular weight is ), 1 g of polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, 0.5 g of ethylenediaminetetra Acetic acid, 2 g of monoethanolamine, 0.1 g of sodium benzoate and 0.25 g of sodium p-toluenesulfonate were sequentially dissolved in 100 ml of deionized water.
2. 配置碱液：将10 g氢氧化钠溶于990 g去离子水中，得到质量分数为1%的氢氧化钠水溶液。2. Prepare lye: dissolve 10 g of sodium hydroxide in 990 g of deionized water to obtain an aqueous solution of sodium hydroxide with a mass fraction of 1%.
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为0.5:100混合均匀。3. Prepare alkaline texturing solution: mix the texturizing additive obtained in step 1 and the lye obtained in step 2 evenly at a mass ratio of 0.5:100.
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为85 oC，制绒时间为300 s。4. Texturing process: immerse the monocrystalline silicon wafer for solar cells into the alkaline texturing solution prepared in step 3 for surface texturing, the texturing temperature is 85 o C, and the texturing time is 300 s.
实施例2Example 2
工艺步骤如下：The process steps are as follows:
1. 配置制绒添加剂：将1 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物，2 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，0.1 g乙二胺四乙酸，0.5 g单乙醇胺，0.05 g苯甲酸钠和0.5 g对甲苯磺酸钠依次溶解到100 ml去离子水中。1. Configure texturizing additives: 1 g of vinylpyrrolidone-vinylimidazole copolymer, 2 g of polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, 0.1 g of ethylenediaminetetraacetic acid, 0.5 g of monoethanolamine , 0.05 g sodium benzoate and 0.5 g sodium p-toluenesulfonate were successively dissolved in 100 ml deionized water.
2. 配置碱液：将15 g氢氧化钾溶于985 g去离子水中，得到质量分数为1.5%的氢氧化钾水溶液。2. Prepare lye: dissolve 15 g of potassium hydroxide in 985 g of deionized water to obtain an aqueous solution of potassium hydroxide with a mass fraction of 1.5%.
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为1:100混合均匀。3. Prepare alkaline texturing solution: mix the texturizing additive obtained in step 1 and the lye obtained in step 2 evenly at a mass ratio of 1:100.
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为75 oC，制绒时间为420 s。4. Texturing process: immerse the monocrystalline silicon wafer for solar cells into the alkaline texturing solution prepared in step 3 for surface texturing, the texturing temperature is 75 o C, and the texturing time is 420 s.
实施例3Example 3
工艺步骤如下：The process steps are as follows:
1. 配置制绒添加剂：将2 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物，1 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，乙二胺四乙酸0.5，单乙醇胺3，苯甲酸钠 0.1，对甲苯磺酸钠 0.5g依次溶解到100 ml去离子水中。1. Configure texturizing additives: 2 g of vinylpyrrolidone-vinylimidazole copolymer, 1 g of polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, 0.5 ethylenediaminetetraacetic acid, monoethanolamine 3, benzene Dissolve 0.1 g of sodium formate and 0.5 g of sodium p-toluenesulfonate into 100 ml of deionized water in turn.
2. 配置碱液：将20 g氢氧化钠溶于980 g去离子水中，得到质量分数为2%的氢氧化钠水溶液。2. Prepare lye: dissolve 20 g of sodium hydroxide in 980 g of deionized water to obtain an aqueous solution of sodium hydroxide with a mass fraction of 2%.
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为0.1:100混合均匀。3. Prepare alkaline texturing solution: mix the texturizing additive obtained in step 1 and the lye obtained in step 2 evenly in a mass ratio of 0.1:100.
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为88 oC，制绒时间为300 s。4. Texturing process: immerse the monocrystalline silicon wafer for solar cells into the alkaline texturing solution prepared in step 3 for surface texturing, the texturing temperature is 88 o C, and the texturing time is 300 s.
实施例4Example 4
工艺步骤如下：The process steps are as follows:
1. 配置制绒添加剂：将1.5 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物，1.5 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，乙二胺四乙酸0.3，单乙醇胺2，苯甲酸钠 0.2，对甲苯磺酸钠0.5依次溶解到100 ml去离子水中。1. Configure texturing additives: 1.5 g of vinylpyrrolidone-vinylimidazole copolymer, 1.5 g of polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, 0.3 ethylenediaminetetraacetic acid, monoethanolamine 2, benzene Dissolve 0.2 sodium formate and 0.5 sodium p-toluenesulfonate in 100 ml deionized water in sequence.
2. 配置碱液：将30 g氢氧化钠溶于970 g去离子水中，得到质量分数为3%的氢氧化钠水溶液。2. Prepare lye: dissolve 30 g of sodium hydroxide in 970 g of deionized water to obtain an aqueous solution of sodium hydroxide with a mass fraction of 3%.
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为0.2:100混合均匀。3. Prepare alkaline texturing solution: mix the texturizing additive obtained in step 1 and the lye obtained in step 2 in a mass ratio of 0.2:100.
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为83 oC，制绒时间为400 s。4. Texturing process: immerse the monocrystalline silicon wafer for solar cells into the alkaline texturing solution prepared in step 3 for surface texturing, the texturing temperature is 83 o C, and the texturing time is 400 s.
采用本实施例提供的技术方案可快速获得细小、均匀的绒面金字塔。如图1和图2所示，得到的尺寸达到10um；该法成本较低，效率较高，效果显著，具有极佳的实用价值。By adopting the technical solution provided in this embodiment, a fine and uniform suede pyramid can be quickly obtained. As shown in Figure 1 and Figure 2, the obtained size reaches 10um; this method has low cost, high efficiency, remarkable effect and excellent practical value.
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