CN107123639B - A kind of substrate to be filmed and plasma apparatus - Google Patents
A kind of substrate to be filmed and plasma apparatus Download PDFInfo
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- CN107123639B CN107123639B CN201710344635.7A CN201710344635A CN107123639B CN 107123639 B CN107123639 B CN 107123639B CN 201710344635 A CN201710344635 A CN 201710344635A CN 107123639 B CN107123639 B CN 107123639B
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Abstract
The embodiment of the present invention provides a kind of substrate to be filmed and plasma apparatus, is related to field of display technology, can promote the ionization of substrate edge region reaction gas to be filmed.The substrate to be filmed includes: underlay substrate, and the underlay substrate has opposite first surface and second surface, is used to form film layer on the first surface；The edge of first auxiliary electrode, second surface of first auxiliary electrode along the underlay substrate is arranged one week.For making plasma be evenly distributed.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of substrates to be filmed and plasma apparatus.
Background technique
Currently, plasma in display product preparation process using more and more extensive, such as using plasmarized
It learns vapour deposition process (Plasma Enhanced Chemical Vapor Deposition, abbreviation PECVD) and forms gate insulator
Layer (Gate Insulator, abbreviation GI), active layer (Active) and passivation layer (Passivation, abbreviation PVX) etc., or
It is etched on substrate to be filmed in person's dry carving technology using plasma and forms pattern etc..
It, will be to as shown in Figure 1, when using PECVD device depositional coating on substrate 40 to be filmed by taking PECVD as an example
Substrate for film deposition 40 is placed between first electrode 10 and second electrode 20, and the reaction gas flowed out from gas passage 30 is in first electrode
Plasma (Plasma) 50 is formed between 10 and second electrode 20 under the action of electric field, is deposited on substrate 40 to be filmed and is formed
Film.In order to improve formation film compactness, reduce film defects, can often improve the depositing temperature of PECVD, generally
The film-forming temperature of PECVD is controlled at 200 DEG C~400 DEG C.However, if film-forming temperature is increased to 400 DEG C or more, as shown in Fig. 2,
Often a kind of spherical particle (Particle) that partial size is 5~10 μm or so can be generated at the edge of substrate 40 to be filmed, and it is this
The particle of type is generated in film forming procedure, the reason is that as shown in Figure 1, since plasma 50 is in 10 He of first electrode
Generally in spheroid shape between second electrode 20, the density ratio central area of fringe region plasma 50 is low, substrate 40 to be filmed
The ionization of fringe region reaction gas is insufficient, thus unionized reaction gas can be carried out with reaction product under the high temperature conditions
Secondary response generates particle.It is exemplary, silicon (Si) and hydrogen (H2) after ionization reaction generate SiH4, fringe region is due to silicon (Si)
With hydrogen (H2) ionization is insufficient, thus SiH4It again can be with unionized silicon (Si) or hydrogen (H2) reaction generation Si2H6Equal particles.
Since the grain diameter that secondary response generates is smaller, it is difficult to wash off using cleaning equipment, to will lead to product yield decline.
Summary of the invention
The embodiment of the present invention provides a kind of substrate to be filmed and plasma apparatus, can promote substrate edges area to be filmed
The ionization of domain reaction gas.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
On the one hand, a kind of substrate to be filmed is provided, comprising: underlay substrate, the underlay substrate have the first opposite table
Face and second surface are used to form film layer on the first surface；First auxiliary electrode, first auxiliary electrode is along the lining
The edge of the second surface of substrate is arranged one week.
Preferably, first auxiliary electrode is conducting ring.
Preferably, the substrate to be filmed further include: the central area of the second surface of the underlay substrate is set
Second auxiliary electrode.
It is further preferred that the substrate to be filmed further includes third auxiliary electrode；Second auxiliary electrode passes through institute
Third auxiliary electrode is stated to be connected with first auxiliary electrode.
Preferably, the auxiliary electrode is transparent electrode.
On the other hand, a kind of plasma apparatus is provided, comprising: the first electrode and second electrode being oppositely arranged；It is described
First electrode has multiple through-holes；The second electrode is set close to the first auxiliary electrode of the first electrode side, institute
The first auxiliary electrode is stated to be arranged one week along the edge of the second electrode；Gas passage, gas passage setting is described the
Side of one electrode far from the second electrode；The gas passage has gas vent, the described in the gas vent face
One electrode.
Preferably, the first auxiliary electrode is conducting ring.
Preferably, the plasma apparatus further include setting the second electrode close to the first electrode side,
And it is located at second auxiliary electrode in the region of the gas vent face.
It is further preferred that the plasma apparatus further includes third auxiliary electrode；Second auxiliary electrode passes through
The third auxiliary electrode is connected with first auxiliary electrode.
Preferably, the plasma apparatus is apparatus for plasma chemical vapor deposition.
The embodiment of the present invention provides a kind of substrate to be filmed and plasma apparatus, due to the second surface of underlay substrate
Edge is provided with the first auxiliary electrode, thus in the first electrode being put into substrate to be filmed in plasma apparatus and the second electricity
When between pole, and the first surface of substrate to be filmed is towards first electrode, due between the first auxiliary electrode and first electrode
Distance be less than the distance between first electrode and second electrode, thus between the first auxiliary electrode and first electrode gas breakdown
Voltage is less than the breakdown voltage of gas between first electrode and second electrode, therefore at the position of the first auxiliary electrode face, gas
Body is easier to be ionized, and the plasma of formation is more.
Based on this, when substrate to be filmed is formed a film by PECVD device, due to the second of the underlay substrate of substrate to be filmed
The edge on surface is provided with the first auxiliary electrode, thus can promote the ionization of substrate edge region reaction gas to be filmed, from
And avoid unionized reaction gas and react to form particle with reaction product, reduce the substrate to be filmed in film forming procedure
The particle that edge is formed, and the first auxiliary electrode of second surface edge setting can make the distribution of plasma bigger,
So that the film formed on substrate to be filmed is more evenly distributed, the homogeneity of film forming is improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram that substrate to be filmed is put into plasma apparatus that the prior art provides；
Fig. 2 is that a kind of edge for substrate to be filmed that the prior art provides is formed with the structural schematic diagram of multiple particles；
Fig. 3 (a) is a kind of structural schematic diagram for gas discharge that the prior art provides；
Fig. 3 (b) is a kind of current-voltage diagram for gas discharge that the prior art provides；
Fig. 4 is the Paschen's law curve figure of a kind of air under iron cathode and helium that the prior art provides；
Fig. 5 (a) is a kind of structural schematic diagram one of substrate to be filmed provided in an embodiment of the present invention；
Fig. 5 (b) is a kind of structural schematic diagram two of substrate to be filmed provided in an embodiment of the present invention；
Fig. 5 (c) is a kind of structural schematic diagram three of substrate to be filmed provided in an embodiment of the present invention；
Fig. 6 is a kind of structural schematic diagram that substrate to be filmed is put into plasma apparatus provided in an embodiment of the present invention；
Fig. 7 is a kind of structural schematic diagram four of substrate to be filmed provided in an embodiment of the present invention；
Fig. 8 is a kind of structural schematic diagram five of substrate to be filmed provided in an embodiment of the present invention；
Fig. 9 is a kind of structural schematic diagram of plasma apparatus provided in an embodiment of the present invention.
Appended drawing reference:
10- first electrode；20- second electrode；30- gas passage；40- substrate to be filmed；50- plasma；60- substrate
Substrate；601- first surface；602- second surface；The first auxiliary electrode of 70-；The second auxiliary electrode of 80-；90- gas dispersion portion
Part；100- third auxiliary electrode.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Plasma generally is generated using gas discharge in the prior art, and gas discharge can make gas by extra electric field
Body discharges (gaseous conduction).Shown in the easy structure of gas discharge such as Fig. 3 (a), applied by power supply E to two electrode plates a and b
Voltage generates electric field between electrode plate a and electrode plate b, will discharge, that is, produce when the gas in gas-discharge tube c is breakdown
Plasma is given birth to.Volt-ampere (V-A) characteristic curve of the gas discharge with reference to shown in Fig. 3 (b), the voltage U of gas-discharge tube c
Be gradually increased, when the voltage U of gas-discharge tube c increases to gas breakdown voltage (Ub), in gas-discharge tube c will from it is non-from
It holds electric discharge and is transitioned into self-maintained discharge, self-maintained discharge namely gas are breakdown, at this point, discharge current I will continue to increase, gas discharge
Voltage U declines in pipe c, into glow discharge.Self-maintained discharge includes glow discharge and arc discharge, in usual plasma apparatus
Plasma is generated by glow discharge, and the condition of glow discharge are as follows: U > Ub.
It can make gas by increasing the voltage U of gas-discharge tube c, or the breakdown voltage Ub of reduction gas based on this
Body is easier to ionize.And according to Paschen's law (Paschenlaw): after being subject to voltage on two parallel-plate electrodes, electrode
Between form uniform electric field, if discharge gas ingredient, electrode material, gas temperature all determine, breakdown voltage Ub is electrode spacing d
With the function of both air pressure P product (P*d), when changing P*d value, breakdown voltage Ub has a minimum.It is exemplary, as shown in figure 4,
The Paschen's law curve of air and helium (He), the Ub of air under iron cathodeminCorresponding P*d=76Pacm, and the Ub of He gasmin
Corresponding P*d=333Pacm.According to Paschen's law, if reducing the spacing d between two electrodes, breakdown voltage Ub is reduced,
So that gas is easier to ionize.
Based on above-mentioned, the embodiment of the present invention provides a kind of substrate to be filmed 40, such as Fig. 5 (a), Fig. 5 (b) and Fig. 5 (c) institute
Show, comprising: underlay substrate 60, underlay substrate 60 has opposite first surface 601 and second surface 602, on first surface 601
It is used to form film layer；First auxiliary electrode 70, the first auxiliary electrode 70 are arranged along the edge of the second surface 602 of underlay substrate 60
One week.
The first auxiliary electrode 70 is arranged at the edge of the second surface 602 of underlay substrate 60 in the embodiment of the present invention, such as Fig. 6 institute
Show, when substrate 40 to be filmed is placed between the first electrode 10 of plasma apparatus and second electrode 20, the first auxiliary electricity
Pole 70 will affect the electric field that first electrode 10 and second electrode 20 generate, due between the first auxiliary electrode 70 and first electrode 10
Distance d1 be less than the distance between first electrode 10 and second electrode 20 d2, thus the first auxiliary electrode 70 and first electrode 10
Between the breakdown voltage Ub of gas be less than gas breakdown voltage Ub between first electrode 10 and second electrode 20, such first is auxiliary
The content for helping the region of 70 face of electrode to ionize the plasma to be formed increases, so as to expand the distribution model of plasma 50
It encloses.
It should be noted that the first, the first auxiliary electrode 70, which can be Fig. 5 (b) such as, show conducting ring, continuously in substrate
The edge of the second surface 602 of substrate 60 is arranged one week；It is also possible to as shown in Fig. 5 (c), the first auxiliary electrode 70 includes multiple
The sub- auxiliary electrode mutually disconnected.
On this basis, for the thickness of the first auxiliary electrode 70 without limiting, if due to the first auxiliary electrode 70
Thickness is too small, then when substrate 40 to be filmed being put between the first electrode 10 of plasma apparatus and second electrode 20, first
Influence of the auxiliary electrode 70 to electric field between first electrode 10 and second electrode 20 is unobvious, therefore does not have change first electrode
The effect of electric field between 10 and second electrode 20；If the thickness of the first auxiliary electrode 70 is too big, base to be filmed on the one hand will lead to
The thickness of plate 40 increases, to be unfavorable for the lightening requirement of substrate 40 to be filmed, on the other hand may result in underlay substrate 60
The amount for the plasma that the region that the amount for the plasma that the region of marginal position face generates is greater than center face generates,
To be unfavorable for being uniformly distributed for plasma.Based on this, the embodiment of the present invention is preferred, the first auxiliary electrode 70 with a thickness ofLeft and right.
In addition, for the first auxiliary electrode 70 width without limiting, the width of the first auxiliary electrode 70 and substrate base
The size of plate 60 is related.Preferably, the width of the first auxiliary electrode 70 is to serve as a contrast in 70 width direction of the first auxiliary electrode
10% or so of 60 side length of substrate.It is exemplary, if the size of underlay substrate 60 is 370mm*470mm, it is located at underlay substrate
60 side lengths are that the width of the first auxiliary electrode 70 on the side of 370mm is 47mm or so, and being located at 60 side length of underlay substrate is 470mm
Side on the width of the first auxiliary electrode 70 be 37mm or so.
Second, for the first auxiliary electrode 70 material without limit, can be metal or metal oxide.
Third forms the first auxiliary in second surface 602 before the first surface 601 of underlay substrate 60 forms film layer
Electrode 70.For the formation process of the first auxiliary electrode 70, specifically may is that first on the second surface 602 of underlay substrate 60
Layer of conductive film is deposited, recycling exposes, develops, etching technics forms the first auxiliary electrode 70 later can also be to first
Auxiliary electrode 70 carries out annealing process.Herein, the purpose for carrying out annealing process to the first auxiliary electrode 70 is: annealing can make non-
The conductive material of crystalline state becomes polycrystalline state, and so as to improve the mobility of material, the influence to electric field is become apparent from.
4th, for underlay substrate 60 material without limiting, such as can be glass or plastics.
Further, since the edge of the 60 of underlay substrate first surface 601 needs to be arranged cabling or other components, thus one
As be not provided with film layer at a certain distance from the edge of the first surface 601 of underlay substrate 60, herein, edge is formed with the area of particle
Domain is much larger than the region for being not provided with film layer.Based on this, usually screening can be set at the edge of the first surface 601 of underlay substrate 60
Block piece (Shadow frame) forms the film layer (embodiment of the present invention to avoid in the edge of the first surface 601 of underlay substrate 60
It is not illustrated in attached drawing).
The embodiment of the present invention provides a kind of substrate to be filmed 40, since the edge of the second surface 602 of underlay substrate 60 is set
It is equipped with the first auxiliary electrode 70, thus in the first electrode 10 being put into substrate 40 to be filmed in plasma apparatus and the second electricity
When between pole 20, and the first surface 601 of substrate to be filmed 40 is towards first electrode 10, due to the first auxiliary electrode 70 and first
The distance between electrode 10 is less than the distance between first electrode 10 and second electrode 20, thus the first auxiliary electrode 70 and first
The breakdown voltage of gas is less than the breakdown voltage of gas between first electrode 10 and second electrode 20, therefore first between electrode 10
At the position of 70 face of auxiliary electrode, i.e., edge zone gas is easier to be ionized, and the plasma of formation is more.
Based on this, when substrate 40 to be filmed is formed a film by PECVD device, due to the underlay substrate 60 of substrate 40 to be filmed
The edge of second surface 602 be provided with the first auxiliary electrode 70, thus 40 fringe region of substrate to be filmed can be promoted to react
The ionization of gas reacts to form particle so as to avoid unionized reaction gas with reaction product, reduces and was forming a film
The particle that 40 edge of substrate to be filmed is formed in journey, and the first auxiliary electrode 70 of 602 edge of second surface setting can make
The distribution of gas ions 50 is bigger, so that the film formed on substrate to be filmed 40 is more evenly distributed, improves film forming
Homogeneity.
In addition, underlay substrate 60 second surface 602 edge be arranged the first auxiliary electrode 70, not only can solve to
602 roughness of second surface too small the problem of bringing of underlay substrate 60 in substrate for film deposition 40, such as manipulator adsorption capacity is not
The sliding of substrate 40 to be filmed caused by foot, and the first auxiliary electrode 70 can be also used for preventing electrostatic bring from influencing, and reduce
The risk of arc discharge (arcing) occurs in ionization for reaction gas.On this basis, in the material of the first auxiliary electrode 70
When for ITO (Indium Tin Oxide, tin indium oxide) or IZO (Indium Zinc Oxide, indium zinc oxide), reaction gas
In hydrogen atom be easy to displace the indium in ITO or IZO, and the indium displaced is attached in the cavity of plasma apparatus, can be dirty
Plasma apparatus is contaminated, since middle one layer of auxiliary electrode of setting is for preventing electrostatic compared with the existing technology, the embodiment of the present invention is only
First auxiliary electrode 70 is set in the partial region of the second surface 602 of underlay substrate 60, due to the face of the auxiliary electrode of setting
Product reduces, thus the content of the indium displaced is reduced, to reduce the pollution of plasma equipment.
It should be noted that the second surface of underlay substrate 60 is arranged in the first auxiliary electrode 70 by the embodiment of the present invention
602 edge, in this way when substrate 40 to be filmed is placed between the first electrode 10 of plasma apparatus and second electrode 20, the
The content that the region of one auxiliary electrode, 70 face ionizes the plasma to be formed will increase.The embodiment of the present invention is assisted first
The edge of the second surface of underlay substrate 60 is arranged in electrode 70, but is not limited to setting at edge, and the first auxiliary electrode 70 is also
It can according to need any position that the second surface of underlay substrate 60 is set.It is exemplary, one is coated on underlay substrate 60
Layer metallic film, metallic film it is in uneven thickness, if patterning when the biggish position of thickness at metallic film be also required to
Removal can be arranged the first auxiliary electrode 70 in the second surface of the underlay substrate 60 of the biggish position face of thickness, exist in this way
When being performed etching using dry etching equipment, since the amount of the plasma of the biggish position generation of thickness is more, it can protect in this way
Metallic film at the card biggish position of thickness is etched completely, improves local etching effect.
Preferably, as shown in Fig. 5 (b), the first auxiliary electrode 70 is conducting ring.
Wherein, the first auxiliary electrode 70 is conducting ring, i.e. second surface 602 of the first auxiliary electrode 70 in underlay substrate 60
Continuous setting one week, does not turn off.
The embodiment of the present invention, since the first auxiliary electrode 70 is conducting ring, i.e., the first auxiliary electrode 70 is in underlay substrate 60
Edge be respectively provided with, thus the content of the plasma 50 in the region of the edge face of underlay substrate 60 can all increase, and if
One auxiliary electrode 70 is the multiple sub-electrodes mutually disconnected, then needs more conductor wires to be connected respectively with multiple sub-electrodes to more
A sub-electrode is powered, and the first auxiliary electrode 70 is conducting ring, then only needs any one position on a conductor wire and conducting ring
It sets and is connected, can be powered to the first auxiliary electrode 70.
In order to ensure plasma is evenly distributed on the top of substrate 40 to be filmed, generally, the lining of substrate 40 to be filmed
The gas passage 30 of the central area face plasma apparatus of substrate 60, and the reaction gas flowed out from gas passage 30 is all
To be flowed out with certain flow velocity, the central area distribution in the region namely underlay substrate 60 of such 30 face of gas passage it is anti-
Answering the content of gas can reduce, when the flow velocity of especially reaction gas is larger, in addition, what the gas vent of gas passage 30 was arranged
Gas discrete part 90, it is also possible to which the content that will lead to the reaction gas of the central area distribution of underlay substrate 60 reduces, and anti-
The amount that the central area for answering the content of gas to reduce, and then will lead to underlay substrate 60 ionizes the plasma to be formed reduces, from
And plasma is caused to be unevenly distributed.
Based on above-mentioned, the embodiment of the present invention is preferred, as shown in fig. 7, substrate to be filmed 40 further include: is arranged in substrate base
Second auxiliary electrode 80 of the central area of the second surface 602 of plate 60.
Wherein, the size of the second auxiliary electrode 80 can according to need and is rationally arranged without limiting.This
Outside, for the thickness of the second auxiliary electrode 80, being subject to can make plasma be evenly distributed, can be with the first auxiliary electrode 70
Thickness is identical, can not also be identical, the preferably thickness of the first auxiliary electrode 70 and the second auxiliary electrode 80 of the embodiment of the present invention
Thickness is identical.
The embodiment of the present invention, since the central area of the second surface 602 of underlay substrate 60 is provided with the second auxiliary electrode
80, thus the ionization of the central area reaction gas of substrate 40 to be filmed can be promoted, so that in substrate to be filmed 40
The plasma 50 that the region of heart district domain face is formed increases, so that the plasma at 40 different location of substrate to be filmed
50 are evenly distributed.
When the first auxiliary electrode is arranged in the fringe region of the second surface 602 of the underlay substrate 60 in substrate 40 to be filmed
70, when the second auxiliary electrode 80 is arranged in central area, since the first auxiliary electrode 70 and the second auxiliary electrode 80 are not connected to, because
And need to be powered to the first auxiliary electrode 70 and the second auxiliary electrode 80 respectively, to increase 40 film forming procedure of substrate to be filmed
Complexity.Based on this, the embodiment of the present invention is it is further preferred that as shown in figure 8, substrate to be filmed 40 further includes third auxiliary
Electrode 100；Second auxiliary electrode 80 is connected by third auxiliary electrode 100 with the first auxiliary electrode 70.
Wherein, for the setting number of third auxiliary electrode 100 without limiting, as long as 80 He of the second auxiliary electrode can be made
First auxiliary electrode 70 is connected.For example, a third auxiliary electrode 100 can be set, it also can be set two or two
Above multiple third auxiliary electrodes 100.The embodiment of the present invention is preferred, as shown in figure 8, symmetrically setting around the second auxiliary electrode 80
Set four third auxiliary electrodes 100.
The embodiment of the present invention, since to be additionally provided with third auxiliary for the second surface 602 of the underlay substrate 60 of substrate 40 to be filmed
Electrode 100 is helped, the second auxiliary electrode 80 is connected by third auxiliary electrode 100 with the first auxiliary electrode 70, so only need to be to the
One auxiliary electrode 70 is powered, can be so that the second auxiliary electrode 80 and the first auxiliary electrode 70 charge.
Preferably, auxiliary electrode is transparent electrode.
Herein, auxiliary electrode refers to the first auxiliary electrode 70, the second auxiliary electrode 80 and third auxiliary electrode 100.
Wherein, when auxiliary electrode is transparent electrode, the material of auxiliary electrode can be at least one of IZO or ITO.
The embodiment of the present invention, when substrate 40 to be filmed is substrate for display, since auxiliary electrode is transparent electrode, thus
It can be to avoid the influence to display.
Existing plasma apparatus, as shown in Figure 1, reaction gas is flowed out from the gas vent of gas passage 30, reaction
Gas ionizes under the electric field action of first electrode 10 and second electrode 20, forms plasma 50, the plasma 50 of formation
In spheroid shape, 50 density of plasma of the 50 density ratio central area of plasma of fringe region is low, so as to cause plasma
Body is unevenly distributed.
Based on this, the embodiment of the present invention also provides a kind of plasma apparatus, as shown in Figure 9, comprising: be oppositely arranged
One electrode 10 and second electrode 20；First electrode 10 has multiple through-holes；It is arranged in second electrode 20 close to first electrode 10 1
First auxiliary electrode 70 of side, the first auxiliary electrode 70 are arranged one week along the edge of second electrode 20；Gas passage 30, gas are logical
Side of the first electrode 10 far from second electrode 20 is arranged in road 30；Gas passage 30 has gas vent, gas vent face
First electrode 10.
It should be noted that all equipment for being applied to plasma can be known as plasma apparatus.Herein, for
The type of plasma apparatus can be apparatus for plasma chemical vapor deposition, be also possible to dry etching equipment without limiting.
Wherein, gas discrete part (baffle) 90 can also be arranged in the outlet of gas passage 30, so that from gas passage
The gas of 30 outflows is dispersed in first electrode 10.For gas discrete part 90 shape without limit, can be
Taper is also possible to plate shape or other shapes etc..Due to having multiple through-holes in first electrode 10, such gas can be worn
It crosses through-hole to flow between first electrode 10 and second electrode 20, in the effect for the electric field that first electrode 10 and second electrode 20 generate
Lower formation plasma.
Herein, the first auxiliary electrode 70 is arranged one week along the edge of second electrode 20, and the first auxiliary electrode 70 can be with the
Two electrodes 20 directly contact, and can not also contact.In addition, the first auxiliary electrode 70 can be Fig. 5 (b) such as and show conducting ring,
Continuously it is arranged one week at 20 edge of second electrode；It is also possible to as shown in Fig. 5 (c), the first auxiliary electrode 70 includes multiple mutual
The sub- auxiliary electrode disconnected.
It on this basis, can be metal or metal oxide for the material of the first auxiliary electrode 70 without limiting.
For the first auxiliary electrode 70 thickness without limit, if since the thickness of the first auxiliary electrode 70 is too small,
Influence of first auxiliary electrode 70 to electric field between first electrode 10 and second electrode 20 is unobvious, therefore does not have change first
The effect of electric field between electrode 10 and second electrode 20；If the thickness of the first auxiliary electrode 70 is too big, it is likely to result in first
The plasma content that 70 face region of auxiliary electrode is formed is excessive, so that between first electrode 10 and second electrode 20
Plasma is unevenly distributed, be based on this, the embodiment of the present invention is preferred, the first auxiliary electrode 70 with a thickness ofLeft and right.
In addition, for the first auxiliary electrode 70 width without limiting, the width of the first auxiliary electrode 70 and second electric
The size of pole 20 is related.Preferably, the width of the first auxiliary electrode 70 is the in 70 width direction of the first auxiliary electrode
10% or so of two electrodes, 20 side length.It is exemplary, if the size of second electrode 20 is 370mm*470mm, it is located at second electrode
20 side lengths are that the width of the first auxiliary electrode 70 on the side of 370mm is 47mm or so, and being located at 20 side length of second electrode is 470mm
Side on the width of the first auxiliary electrode 70 be 37mm or so.
The embodiment of the present invention provides a kind of plasma apparatus, and the edge of second electrode 20 is provided with the first auxiliary electrode
70, since the distance between the first auxiliary electrode 70 and first electrode 10 d1 is less than between first electrode 10 and second electrode 20
Distance d2, thus the breakdown voltage of gas is less than first electrode 10 and the second electricity between the first auxiliary electrode 70 and first electrode 10
The breakdown voltage of gas between pole 20, therefore at the position of 70 face of the first auxiliary electrode, gas is easier to be ionized, formation
Plasma is more, can solve that amount of plasma that plasma apparatus edge in the prior art is formed is less to ask in this way
Topic, so that plasma is more evenly distributed.When the plasma apparatus is apparatus for plasma chemical vapor deposition,
Using apparatus for plasma chemical vapor deposition when substrate surface to be filmed forms film layer, it can promote and 20 side of second electrode
The ionization of the region reaction gas of edge region face, in this way can be insufficient to avoid the ionization of fringe region reaction gas, causes
Reaction gas and reaction product form particle, and the film formed on substrate to be filmed can be made to be more evenly distributed, mentioned
The high homogeneity of film forming.
Based on the foregoing, it is desirable to which second electrode 20 is arranged in the first auxiliary electrode 70 by explanation, the embodiment of the present invention
Edge can promote the ionization with the region reaction gas of 20 edge face of second electrode in this way, form fringe region
The amount of plasma increases.The edge of second electrode 20 is arranged in first auxiliary electrode 70 by the embodiment of the present invention, but and unlimited
In the edge that second electrode 20 is arranged in, can also be set as needed in any position of second electrode 20, it is all with first
The region of 70 face of auxiliary electrode, can all promote the ionization of reaction gas, increase the amount of the plasma of formation.It is exemplary,
On underlay substrate be coated with one layer of metallic film, metallic film it is in uneven thickness, if patterning when the biggish position of thickness at
Metallic film be also required to remove, when underlay substrate is placed between first electrode 10 and second electrode 20 carry out dry etching when, can
The first auxiliary electrode 70 is arranged with the region of the biggish position face of thickness of metal film in second electrode 20, so as to promote
The ionization of reaction gas at the position increases the amount of the plasma generated, to guarantee the metal at the biggish position of thickness
Film is etched completely.
Preferably, as shown in Fig. 5 (b), the first auxiliary electrode 70 is conducting ring.
Wherein, the first auxiliary electrode 70 is conducting ring, i.e. the first auxiliary electrode 70 is continuously arranged one in second electrode 20
It does not turn off in week.
The embodiment of the present invention, since the first auxiliary electrode 70 is conducting ring, i.e., the first auxiliary electrode 70 is in second electrode 20
Edge be respectively provided with, thus the content of the plasma 50 in the region of the edge face of second electrode 20 can all increase, and if
One auxiliary electrode 70 is the multiple sub-electrodes mutually disconnected, then needs more conductor wires to be connected respectively with multiple sub-electrodes to more
A sub-electrode is powered, and the first auxiliary electrode 70 is conducting ring, then only needs any one position on a conductor wire and conducting ring
It sets and is connected, can be powered to the first auxiliary electrode 70.
Since the reaction gas flowed out from gas passage 30 is flowed out with certain flow velocity, the gas of such gas passage 30
The content of body exit reaction gas can generally reduce, when the flow velocity of especially reaction gas is larger, in addition, gas passage 30
The gas discrete part 90 of gas outlet setting, it is also possible to reduce the content of gas outlet reaction gas, and react
The content of gas reduces, and then will lead to the amount reduction that gas vent face region ionizes the plasma to be formed, so as to cause
Plasma is unevenly distributed.
Based on above-mentioned, the embodiment of the present invention is preferred, and plasma apparatus further includes setting in second electrode 20 close to the
One electrode, 10 side and be located at gas vent face region the second auxiliary electrode 80.
Wherein, the size of the second auxiliary electrode 80 can according to need and is rationally arranged without limiting.This
Outside, for the thickness of the second auxiliary electrode 80, being subject to can make plasma be evenly distributed, can be with the first auxiliary electrode 70
Thickness is identical, can not also be identical, the preferably thickness of the first auxiliary electrode 70 and the second auxiliary electrode 80 of the embodiment of the present invention
Thickness is identical.
The embodiment of the present invention, since the region of the gas vent face of plasma apparatus is provided with the second auxiliary electrode 80,
The ionization of gas vent face region reaction gas can thus be promoted, so that the region of gas vent face was formed etc.
Gas ions 50 increase, so that the plasma 50 at 40 different location of substrate to be filmed is evenly distributed.
When the first auxiliary electrode 70 is arranged close to the edge of 10 side of first electrode in second electrode 20, in second electrode 20
Close to first electrode 10 side and when being located at the region of gas vent face the second auxiliary electrode 80 being set, due to first auxiliary
It helps electrode 70 and the second auxiliary electrode 80 to be not connected to, thus needs logical to the first auxiliary electrode 70 and the second auxiliary electrode 80 respectively
Electricity, to increase the complexity of plasma apparatus.Based on this, the embodiment of the present invention it is further preferred that as shown in figure 8,
Plasma apparatus further includes third auxiliary electrode 100；Second auxiliary electrode 80 passes through third auxiliary electrode 100 and the first auxiliary
Electrode 70 is connected.
Wherein, for the setting number of third auxiliary electrode 100 without limiting, as long as 80 He of the second auxiliary electrode can be made
First auxiliary electrode 70 is connected.For example, a third auxiliary electrode 100 can be set, it also can be set two or two
Above multiple third auxiliary electrodes 100.The embodiment of the present invention is preferred, and four thirds are symmetrical arranged around the second auxiliary electrode 80
Auxiliary electrode 100.
The embodiment of the present invention, since second electrode 20 is additionally provided with third auxiliary electrode close to the side of first electrode 10
100, the second auxiliary electrode 80 is connected by third auxiliary electrode 100 with the first auxiliary electrode 70, so only need to be to the first auxiliary
Electrode 70 is powered, can be so that the second auxiliary electrode 80 and the first auxiliary electrode 70 charge.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of substrate to be filmed, the substrate to be filmed is formed a film by plasma chemical vapor deposition, which is characterized in that
Include:
Underlay substrate, the underlay substrate have opposite first surface and second surface, are used to form on the first surface
Film layer；
The edge of first auxiliary electrode, second surface of first auxiliary electrode along the underlay substrate is arranged one week.
2. substrate to be filmed according to claim 1, which is characterized in that first auxiliary electrode is conducting ring.
3. substrate to be filmed according to claim 1, which is characterized in that the substrate to be filmed further include: be arranged in institute
State the second auxiliary electrode of the central area of the second surface of underlay substrate.
4. substrate to be filmed according to claim 3, which is characterized in that the substrate to be filmed further includes third auxiliary electricity
Pole；
Second auxiliary electrode is connected by the third auxiliary electrode with first auxiliary electrode.
5. substrate to be filmed according to claim 1-4, which is characterized in that the auxiliary electrode is transparent electricity
Pole.
6. a kind of plasma apparatus characterized by comprising
The first electrode and second electrode being oppositely arranged；The first electrode has multiple through-holes；
The second electrode is set close to the first auxiliary electrode of the first electrode side, first auxiliary electrode is along institute
State setting one week on the inside of the edge of second electrode；
Side of the first electrode far from the second electrode is arranged in gas passage, the gas passage；The gas is logical
Road has gas vent, first electrode described in the gas vent face；
The plasma apparatus is less than described first due to the distance between first auxiliary electrode and the first electrode
The distance between electrode and the second electrode, so that gas is easier electric at the position of the first auxiliary electrode face
From the plasma of formation is more.
7. plasma apparatus according to claim 6, which is characterized in that the first auxiliary electrode is conducting ring.
8. plasma apparatus according to claim 6, which is characterized in that the plasma apparatus further includes that setting exists
Second auxiliary electrode of the second electrode close to the first electrode side and positioned at the region of the gas vent face.
9. plasma apparatus according to claim 8, which is characterized in that the plasma apparatus further includes that third is auxiliary
Help electrode；
Second auxiliary electrode is connected by the third auxiliary electrode with first auxiliary electrode.
10. according to the described in any item plasma apparatus of claim 6-9, which is characterized in that the plasma apparatus be etc.
Gas ions chemical vapor depsotition equipment.
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| CN201710344635.7A CN107123639B (en) | 2017-05-16 | 2017-05-16 | A kind of substrate to be filmed and plasma apparatus |
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| CN201710344635.7A CN107123639B (en) | 2017-05-16 | 2017-05-16 | A kind of substrate to be filmed and plasma apparatus |
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| CN107123639B true CN107123639B (en) | 2019-07-05 |
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| JP3146112B2 (en) * | 1993-12-24 | 2001-03-12 | シャープ株式会社 | Plasma CVD equipment |
| US20140069584A1 (en) * | 2008-07-23 | 2014-03-13 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode |
| US10950477B2 (en) * | 2015-08-07 | 2021-03-16 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
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