CN105895685B - Power semiconductor and its manufacturing method - Google Patents
Power semiconductor and its manufacturing method Download PDFInfo
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- CN105895685B CN105895685B CN201510991986.8A CN201510991986A CN105895685B CN 105895685 B CN105895685 B CN 105895685B CN 201510991986 A CN201510991986 A CN 201510991986A CN 105895685 B CN105895685 B CN 105895685B
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
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- Junction Field-Effect Transistors (AREA)
Abstract
本发明公开了一种功率半导体器件及其制造方法，所述功率半导体器件包括：衬底；位于所述衬底上的成核层和/或缓冲层；位于所述成核层和/或缓冲层的沟道层；位于所述沟道层上的势垒层，所述沟道层和势垒层界面处形成有二维电子气；位于所述势垒层上的源极、漏极和栅极，所述栅极位于源极和漏极之间；所述沟道层和势垒层界面处的上方形成有若干结终端结构，所述结终端结构从栅极靠近漏极一侧的边缘处向漏极方向延伸，所述结终端结构的厚度从栅极到漏极方向逐渐减小，所述结终端中包含负离子。本发明中结终端结构可以有效改善势垒层的电场分布，提升器件的击穿电压。
The invention discloses a power semiconductor device and a manufacturing method thereof. The power semiconductor device comprises: a substrate; a nucleation layer and/or a buffer layer on the substrate; and a nucleation layer and/or a buffer layer on the substrate The channel layer of the layer; the barrier layer located on the channel layer, a two-dimensional electron gas is formed at the interface between the channel layer and the barrier layer; the source electrode, the drain electrode and the The gate is located between the source and the drain; a plurality of junction termination structures are formed above the interface between the channel layer and the barrier layer, and the junction termination structures extend from the gate on the side close to the drain. The edge extends toward the drain, the thickness of the junction terminal structure gradually decreases from the gate to the drain, and the junction terminal contains negative ions. The junction terminal structure in the present invention can effectively improve the electric field distribution of the potential barrier layer and increase the breakdown voltage of the device.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of power semiconductor and its manufacturing method.
Background technique
GaN base high electron mobility transistor (High Electron Mobility Transistor, abbreviation HEMT) tool
There are high two-dimensional electron gas (Two Dimensional Electron Gas, abbreviation 2DEG) and high-breakdown-voltage, to obtain
Obtained the extensive concern of scientific research institution and industry.In the case where keeping low on-resistance, keep breakdown voltage high as far as possible
It is one of the maximum challenge of current GaN base HEMT device research.
The generally planar type structure of GaN HEMT device, when HEMT device is in an off state, grid applies back bias voltage,
Drain electrode applies positive bias, and source electrode ground connection will lead to electric field line and be gathered in grid close to the edge of drain electrode side, forms electric field point
Peak.When the voltage that grid and drain electrode apply gradually increases, it will lead to the electric field spike at gate edge and further increase, work as height
When the critical breakdown electric field intensity of GaN, device will be breakdown here.
Field plate techniques are a kind of knot terminal technologies generallyd use in current power device, in HEMT device structure usually
Using source electrode or gate metal field plate, to promote the breakdown voltage of device.But the effect that grid field plate reduces electric field spike is limited,
And the highest cutoff frequency of device can be reduced；It is usually necessary to use air bridges constructions for source electrode field plate, and manufacturing process is complicated, and device is good
Rate is low.And two kinds of field plate modes can introduce new electric field spike in its edge, have to the effect for promoting device electric breakdown strength
Limit.
Summary of the invention
In view of this, the invention proposes a kind of power semiconductor and its manufacturing method with junction termination structures.
The semiconductor device structure includes: substrate；Channel layer on the substrate；Barrier layer on the channel layer, institute
It states channel layer and barrier layer interface is formed with two-dimensional electron gas；Source electrode, drain and gate on the barrier layer, it is described
Grid is between source electrode and drain electrode；Several junction termination structures, institute are formed with above the channel layer and barrier layer interface
It states junction termination structures and extends from grid close to the edge of drain electrode side to drain directions, the thickness of the junction termination structures is from grid
Pole is gradually reduced to drain directions, includes anion in the knot terminal.The junction termination structures are adjusted in its lower barrierlayer
Field distribution, the breakdown voltage of hoisting power semiconductor devices.
The junction termination structures of the gradient thickness can be formed by introducing negative electrical charge.The depletable barrier layer of negative electrical charge and channel
The concentration of two-dimensional electron gas at bed boundary, the degree of exhaustion of two-dimensional electron gas are also to gradually change, degree of exhaustion and its
On the relationship that is positively correlated of junction termination structures depth；The field distribution in barrier layer can be changed in the junction termination structures, weakens grid
Extremely close to the electric field spike intensity of drain terminal edge, electric field is set to tend towards stability along grid to the distribution of drain electrode, to promote device
Breakdown voltage.
For the HEMT device using this junction termination structures, when there is applied voltage to be loaded into device drain, knot terminal
Structure can be adjusted device barrier layer surface field distribution.Since junction termination structures are in the thickness at gate edge
Maximum, negative electrical charge are most obvious to exhausting for two-dimensional electron gas, therefore peak electric field herein obtains maximum inhibition.Simultaneously because knot
Terminal structure thickness is gradually reduced close to drain directions, subtracts the two-dimensional electron gas degree of exhaustion at drain directions gradually
It is small, and finally restore to two-dimensional electron gas when not exhausting.Therefore the electric field line at knot terminal edge will not increase suddenly
To very intensively, new electric field spike will not be introduced in terminal edge.Barrier layer surface field is in bigger model between grid and drain electrode
Interior smooth transition is enclosed, the voltage that barrier layer semiconductor is born between source-drain electrode is close, improves the breakdown voltage of device.And whole
Degree of exhaustion gradual change and other positions under junction termination structures are formd at a barrier layer channel layer interface keeps high two-dimensional electron gas
The constant structure of concentration, to obtain the HEMT device of high mobility, high-breakdown-voltage.
To achieve the goals above, technical solution provided in an embodiment of the present invention is as follows:
A kind of power semiconductor, the power semiconductor include:
Substrate；
Nucleating layer and/or buffer layer on the substrate；
Channel layer on the nucleating layer and/or buffer layer；
Barrier layer on the channel layer, the channel layer and barrier layer interface are formed with two-dimensional electron gas；
Source electrode, drain and gate on the barrier layer, the grid is between source electrode and drain electrode；
It is formed with several junction termination structures above the channel layer and barrier layer interface, the junction termination structures are from grid
Extremely close to drain electrode side edge to drain directions extend, the thickness of the junction termination structures from grid to drain directions gradually
Reduce, includes anion in the knot terminal.
As a further improvement of the present invention, the junction termination structures are formed in the barrier layer.
As a further improvement of the present invention, it is equipped between source electrode and grid, between drain and gate on the barrier layer
Dielectric layer, the junction termination structures are formed in the dielectric layer.
As a further improvement of the present invention, the junction termination structures are one or more.
As a further improvement of the present invention, the junction termination structures are linear type junction termination structures, shaped form knot terminal
One of structure, ladder-like junction termination structures or a variety of combinations.
As a further improvement of the present invention, source metal is completely or partially formed on the source electrode and junction termination structures
Field plate, source electrode and junction termination structures are connected by source metal field plate, be formed with below source metal field plate air bridges and/or
Medium bridge.
As a further improvement of the present invention, the anion includes fluorine ion.
Correspondingly, a kind of manufacturing method of power semiconductor, the manufacturing method include:
S1, a substrate is provided, and nucleating layer and/or buffer layer is formed on the substrate；
S2, channel layer and barrier layer, channel layer and barrier layer interface shape are formed on the nucleating layer and/or buffer layer
At there is two-dimensional electron gas；
S3, source electrode, drain and gate are formed on the barrier layer, the grid is between source electrode and drain electrode；
S4, several junction termination structures, the junction termination structures are formed in the top of the channel layer and barrier layer interface
Extend from grid close to the edge of drain electrode side to drain directions, the thickness of the junction termination structures is from grid to drain directions
It is gradually reduced, includes anion in the knot terminal.
As a further improvement of the present invention, the step S4 specifically:
Mask layer is formed on barrier layer；
Photoresist layer is formed on mask layer；
Photoetching is carried out to the photoresist layer on mask layer using the mask plate with density dot matrix and is developed, the mask plate
It is gradually increased from grid to drain directions exposure, forms that thickness changing trend is opposite with knot terminal layer thickness variation trend covers
Film layer；
Ion implanting is carried out, if forming the knot terminal knot that dry thickness is gradually reduced from grid to drain directions in barrier layer
Structure.
As a further improvement of the present invention, the step S4 specifically:
Dielectric layer is formed between the source electrode and grid on barrier layer, between drain and gate；
Mask layer is formed on dielectric layer；
Photoresist layer is formed on mask layer；
Photoetching is carried out to the photoresist layer on mask layer using the mask plate with density dot matrix and is developed, the mask plate
It is gradually increased from grid to drain directions exposure, forms that thickness changing trend is opposite with knot terminal layer thickness variation trend covers
Film layer；
Ion implanting is carried out, if forming the knot terminal knot that dry thickness is gradually reduced from grid to drain directions in dielectric layer
Structure.
As a further improvement of the present invention, the step S4 further include:
Change the shading dot matrix distribution on mask plate, to form linear type junction termination structures, shaped form junction termination structures, rank
One of scalariform junction termination structures are a variety of.
As a further improvement of the present invention, the mask layer and photoresist layer are same layer.
As a further improvement of the present invention, the ion injected in the step S4 is fluorine ion.
The beneficial effects of the present invention are:
The piezoelectric effect due to caused by the differences between lattice constant between junction termination structures and its lower barrierlayer, so that barrier layer
With the two-dimensional electron gas at channel layer interface by part depletion；
Junction termination structures can be effectively improved the field distribution of barrier layer, promote the breakdown voltage of device.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in invention, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the HEMT device in the embodiment of the present invention one with linear type junction termination structures；
Fig. 2 a is the energy band schematic diagram in Fig. 1 at the position A-A ', and Fig. 2 b is the energy band schematic diagram in Fig. 1 at the position B-B '；
Fig. 3 is the preparation method flow chart of the HEMT device in the embodiment of the present invention one with linear type junction termination structures；
Fig. 4 is the structural schematic diagram of the HEMT device in the embodiment of the present invention two with ladder-like junction termination structures；
Fig. 5 is the preparation method flow chart of the HEMT device in the embodiment of the present invention two with ladder-like junction termination structures；
Fig. 6 is the structural schematic diagram of the HEMT device with shaped form junction termination structures in three embodiments of the invention；
Fig. 7 is the structural schematic diagram of the HEMT device in the embodiment of the present invention four with shaped form junction termination structures；
Fig. 8 is the structural schematic diagram of the HEMT device in the embodiment of the present invention five with multiple junction termination structures；
Fig. 9 is the structural representation of the HEMT device with source metal field plate and junction termination structures in the embodiment of the present invention six
Figure；
Figure 10 is the structural schematic diagram of the HEMT device with dielectric layer and junction termination structures in the embodiment of the present invention seven.
Specific embodiment
The invention discloses a kind of power semiconductor, which includes:
Substrate；
Nucleating layer and/or buffer layer on substrate；
Channel layer on nucleating layer and/or buffer layer；
Barrier layer on channel layer, channel layer and barrier layer interface are formed with two-dimensional electron gas；
Source electrode, drain and gate on barrier layer, grid is between source electrode and drain electrode；
Several junction termination structures are formed with above channel layer and barrier layer interface, junction termination structures are from grid close to leakage
The edge of pole side extends to drain directions, and the thickness of junction termination structures is gradually reduced from grid to drain directions, knot terminal
In include anion.
Further, junction termination structures can be formed in barrier layer, can also be formed on barrier layer between source electrode and grid,
In dielectric layer between drain and gate.
The invention also discloses a kind of manufacturing method of power semiconductor, which includes:
S1, a substrate is provided, and nucleating layer and/or buffer layer is formed on the substrate；
S2, formation channel layer and barrier layer, channel layer and barrier layer interface are formed on nucleating layer and/or buffer layer
Two-dimensional electron gas；
S3, source electrode, drain and gate are formed on barrier layer, grid is between source electrode and drain electrode；
S4, several junction termination structures are formed in the top of channel layer and barrier layer interface, junction termination structures are leaned on from grid
The edge of nearly drain electrode side extends to drain directions, and the thickness of junction termination structures is gradually reduced from grid to drain directions, is tied
It include anion in terminal.
The field distribution in its lower barrierlayer is adjusted by junction termination structures by the present invention, promotes the breakdown voltage of device.
Below with reference to specific embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
Do not limit the present invention, those skilled in the art made structure, method or functionally according to these embodiments
Transformation is included within the scope of protection of the present invention.
In addition, duplicate label or mark may be used in various embodiments.These are repeated only for simple clear
The ground narration present invention, not representing has any relevance between the different embodiments or structure discussed.
Embodiment one
Ginseng Fig. 1 show the structural representation of the HEMT device in the embodiment of the present invention one with linear type junction termination structures
Figure.
The HEMT device specifically includes:
Substrate 12, substrate can be silicon, sapphire, silicon carbide or other materials；
The nitride nucleating layer 13 and buffer layer 14 of the epitaxial growth on substrate 12, nucleating layer 13 include GaN or A1N or its
His nitride plays the role of matching substrate material and high quality Epitaxial gallium nitride layer, influences top by gallium nitride channel layer/aluminium
The parameters such as crystal quality, surface topography and the electrical properties of hetero-junctions that gallium nitrogen barrier layer is constituted；
The channel layer 15 grown on buffer layer 14, channel layer 15 include GaN layer or other semiconductors；
The barrier layer 16 grown on channel layer 15, barrier layer 16 include AlGaN or other semiconductors, channel layer 15 and gesture
Barrier layer 16 forms semiconductor heterostructure together, forms high concentration two-dimensional electron gas in the two interface, and in GaN channel layer
Heterojunction boundary at generate conducting channel；
It is source electrode 17 and drain electrode 19 on barrier layer 16, source electrode 17 and drain electrode 19 and barrier layer 16 form Ohmic contact,
The material of the ohmic metal can be one of metals such as W metal, Ti, Al, Au or a variety of combinations；Source electrode 17 and drain electrode
It is grid 18 on barrier layer 16 between 20, grid 18 and barrier layer 16 form Schottky contacts；
In barrier layer 16, grid 18 is junction termination structures 20 at drain edge, and the thickness of junction termination structures 20 is (thick
Degree refer in Fig. 1 junction termination structures 20 and the surface that air contacts at a distance from knot terminal lower surface) from gate edge to drain electrode
Place successively decreases, and is linear type junction termination structures.Contain anion in the junction termination structures, which can be fluorine ion, due to
The strong electronegativity of fluorine ion can effectively exhaust the two-dimensional electron gas at the barrier layer and channel layer interface under knot terminal.
With successively decreasing for junction termination structures thickness, the degree of exhaustion of two-dimensional electron gas is also to gradually change, and exhausts journey
The relationship that degree is positively correlated with junction termination structures thickness thereon, i.e., along drain directions, its degree of exhaustion gradually decreases grid, and
It is gradually brought to normal two-dimensional electron gas.The field distribution in its lower barrierlayer is adjusted in the knot terminal, weakens grid
Electric field spike intensity close to drain terminal edge makes electric field tend towards stability along in grid to the distribution of drain electrode, to promote device
Breakdown voltage.
For the HEMT device using this junction termination structures, when there is applied voltage to be loaded into device drain, knot terminal
Device barrier layer surface field distribution can be adjusted.Since knot terminal is maximum in the depth at gate edge, bear
Exhausting for ion pair two-dimensional electron gas is most obvious, therefore peak electric field herein obtains maximum inhibition.Simultaneously because knot terminal knot
Structure thickness is gradually reduced close to drain directions, is gradually reduced the two-dimensional electron gas degree of exhaustion at drain directions, and
It is final to restore to two-dimensional electron gas when not exhausting.Therefore the electric field line of terminal edge will not increase to very close suddenly
Collection, will not introduce new electric field spike in terminal edge.Barrier layer surface field is put down in a wider context between grid and drain electrode
It slips over and crosses, the voltage that barrier layer semiconductor is born between source-drain electrode is close, improves the breakdown voltage of device.And in entire potential barrier
Foring degree of exhaustion gradual change and other positions under knot terminal at layer channel layer interface keeps high two-dimensional electron gas constant
Structure, to obtain the HEMT device of high mobility, high-breakdown-voltage.
Make a concrete analysis of the 2DEG at the barrier layer and channel layer interface under semiconductor junction terminal structure, the knot of thickness larger part
Terminal part has more piezoelectricity anions, stronger to the depletion action of two-dimensional electron gas, as the energy band at Fig. 2 a A-A ' is shown
Shown in intention.And the degree of exhaustion of the two-dimensional electron gas at the lesser knot terminal of thickness is smaller, as the energy band at Fig. 2 b B-B ' is shown
Shown in intention, the energy band diagram being compared at the position figure A-A ', fermi level is moved up, and fermi level is partly led closer to channel layer
Body conduction band bottom, therefore two-dimensional electron gas herein is bigger.From the smallest knot terminal of thickness eventually to the maximum knot of thickness
At end, under two-dimensional electron gas be gradually reduced.Knot terminal thickness maximum, i.e. Two-dimensional electron of the grid at drain electrode
Gas degree of exhaustion is maximum, therefore knot terminal is the most obvious to the reduction effect of peak electric field herein.Meanwhile with knot terminal thickness
Reduce, the effect exhausted to two-dimensional electron gas reduces, and has not only maintained low channel conducting resistance, but also to meet modulated electric fields strong
Degree, promotes the requirement of device electric breakdown strength.
Equally, the junction termination structures of the progressive thickness can also be applied in the devices such as diode, insulated gate transistor.
Anion in the present embodiment in junction termination structures can also be Nitrogen ion, chloride ion, bromide ion etc..
The manufacturing method of HEMT device in the present embodiment a specifically: substrate is provided first, is successively grown on substrate
Nucleating layer, buffer layer, channel layer, barrier layer, and source electrode and drain electrode and between source electrode and drain electrode is formed on barrier layer
Grid, finally in barrier layer by ion implanting to form junction termination structures.
Describe the manufacturing method of junction termination structures in the present embodiment emphatically below.
One layer of mask layer is deposited in barrier layer, photoetching process is done using photoresist on mask layer, uses special designing
Mask plate to knot terminal region carry out photoetching, this mask plate by adjusting shading dot matrix density degree, formed knot terminal from
Grid forms thickness to the mask design for being stepped up exposure far from grid, after development and covers from grid to what drain directions were incremented by
Film layer 21.Can not also on barrier layer deposition mask layer, directly adopt mask layer of the photoresist as ion implanting, such as Fig. 3
It is shown；Then use ion implanting, through thickness distribution gradient mask layer by fluorine ion injection barrier layer, form injection
The junction termination structures 20 that depth changes in gradient.
Embodiment two
Ginseng Fig. 4 show the structural representation of the HEMT device in the embodiment of the present invention two with ladder-like junction termination structures
Figure.
Junction termination structures 20 are ladder-like junction termination structures in the present embodiment, remaining is the same as example 1.The knot is whole
End structure 20 is identical as effect played in embodiment one, to the consumption of barrier layer and the interface channel layer GaN two-dimensional electron gas
To the greatest extent and gradual change, to be also gradual change to the modulation of electric field.The breakdown voltage of device can be promoted, while compared to embodiment
One structure, the structure of embodiment two can be easier to realize in production method.
In embodiment two junction termination structures preparation method as shown in figure 5, on barrier layer deposit one layer of mask layer, covering
Film layer does photoetching process using photoresist, in exposure, by adjusting the density degree of shading dot matrix on lithography mask version
Stepped to successively decrease, the light passed it through successively decreases from from the knot terminal grid at drain electrode, to make the exposure journey of photoresist
Degree successively decreases, and after development, mask layer 21 forms step structure as shown in Figure 5.It can not also be deposited on barrier layer
Mask layer directlys adopt mask layer of the photoresist as ion implanting；Then ion implanting is used, anion such as fluorine ion is infused
Enter in barrier layer, forms junction termination structures 20.
Embodiment three
Ginseng Fig. 6 show the structural representation of the HEMT device in the embodiment of the present invention three with shaped form junction termination structures
Figure.
Compared with embodiment one, the present embodiment is the difference is that junction termination structures 20 are the knot end of notching curve shape
End structure.Shaped form knot terminal can adjust field distribution by adjusting bent curvature of a curve, compare linear type knot terminal, the knot
Terminal structure optimizes field distribution by tilt angle, and the method for increasing optimization field distribution can preferably improve device
Part characteristic.
It is similar with embodiment one in manufacturing method, by the shading dot matrix density degree in designed mask version, it is initially formed
The mask layer of notching curve forms the junction termination structures of notching curve shape then by etching.
Example IV
Ginseng Fig. 7 show the structural representation of the HEMT device in the embodiment of the present invention four with shaped form junction termination structures
Figure.
Compared with embodiment three, the present embodiment is the difference is that knot terminal is the junction termination structures of convex curves shape
20.The shaped form knot terminal can adjust field distribution by adjusting bent curvature of a curve, compare linear type knot terminal, and the knot is whole
End structure optimizes field distribution by tilt angle, and the method for increasing optimization field distribution can preferably improve device
Characteristic.
It is similar with embodiment three in manufacturing method, by the shading dot matrix density degree in designed mask version, it is initially formed
The mask layer of convex curves forms the junction termination structures of convex curves shape then by etching.
Embodiment five
Ginseng Fig. 8 show the structural schematic diagram for having the HEMT device of multiple junction termination structures in the embodiment of the present invention five.
Junction termination structures in the present embodiment are identical as embodiment one kind, be by be introduced into barrier layer anion come
It is formed.The difference is that, the present embodiment is introduced into the ion in multiple embodiments one between the source and drain with embodiment one
The junction termination structures of injection, such as knot terminal 20,22.The electric field in barrier layer can be adjusted for greater flexibility, promote the breakdown of device
Voltage.
It is similar with embodiment one in its manufacturing method, photoetching process is done using photoresist on barrier layer, is set using special
The mask plate of meter carries out photoetching to knot terminal region, this mask plate forms knot terminal by adjusting the density degree of shading dot matrix
From grid to the mask design for being stepped up exposure far from grid, multiple thickness are formed after development and are passed from grid to drain directions
The mask layer subtracted；Then use ion implanting, through thickness distribution gradient mask layer by fluorine ion injection barrier layer, shape
The junction termination structures 20 and 22 changed in gradient at injection depth.
Embodiment six
Ginseng Fig. 9 show the knot of the HEMT device with gate metal field plate and junction termination structures in the embodiment of the present invention six
Structure schematic diagram.
Compared with embodiment one, the present embodiment is the difference is that introduce 23 He of dielectric layer on junction termination structures 20
Source metal field plate 24.In this configuration, source electrode and junction termination structures pass through the source metal field with air bridges or medium bridge
Plate is connected.The material of the source metal field plate can be identical as source metal, is also possible to other and forms ohm with source electrode to connect
The metal of touching.Under the collective effect of junction termination structures and source metal field plate, which can further suppressor grid
Close to the electric field spike of drain electrode end, to improve the breakdown voltage of device.
Embodiment seven
The structure that ginseng Figure 10 show the HEMT device with dielectric layer and junction termination structures in the embodiment of the present invention seven is shown
It is intended to.
Compared with embodiment one, the present embodiment on barrier layer 16 the difference is that introduce dielectric layer 25, and tie
Terminal structure 20 is formed in dielectric layer 25.It equally, include anion in the junction termination structures 20, and its depth distribution is along grid
Gradually successively decrease to drain directions, which can equally reduce the peak electric field that grid lean on drain terminal, to promote hitting for device
Wear voltage.Wherein, dielectric layer 25 can be silicon nitride, aluminium oxide, hafnium oxide etc..
The present embodiment introduces the avoidable damage to barrier layer of process of negative electrical charge compared with embodiment one in dielectric layer 25
Wound ensure that device has good forward conduction ability and reliability.
The present embodiment the production method is as follows.
After forming source electrode, drain and gate, dielectric layer 25 is formed on barrier layer；It is used on dielectric layer 25
The methods of photoetching, ion implanting form junction termination structures 20 in dielectric layer 25, in potential barrier in production method and embodiment one
The method that knot terminal is formed in layer is similar, and details are not described herein.
Likewise, can also be in rank in the bottom that dielectric layer is formed in embodiment two as further improvement of this embodiment
The knot terminal of scalariform；The curved junction termination structures in the bottom in embodiment three, four can also be formed in dielectric layer；It can also be in medium
Multiple junction termination structures in embodiment five are formed in layer；Also the source electrode air bridges in similar embodiment six are formed in the dielectric layer
Or the Metal field plate construction of medium bridge.
Although partly being led by some exemplary embodiments to junction termination structures of the invention and its in GaN base power above
Application in body device is described in detail with manufacturing method, but the above embodiment is not exhaustion, ability
Field technique personnel can realize various change within the spirit and scope of the present invention.As junction termination structures are not limited to above-mentioned implementation
The junction termination structures of linear type, shaped form and ladder-like three kinds of situations in example, other shapes or structure also belong to the present invention
The range protected；Correspondingly, the preparation of junction termination structures is not limited to the density point in above-described embodiment in manufacturing method
The method of battle array photoetching, multiple photoetching, other methods that can prepare junction termination structures in the present invention belong to the present invention and are protected
Range.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (10)
1. a kind of power semiconductor, the power semiconductor include:
Substrate；
Positioned at the channel layer of the substrate；
Barrier layer on the channel layer, the channel layer and barrier layer interface are formed with two-dimensional electron gas；
Source electrode, drain and gate on the barrier layer, the grid is between source electrode and drain electrode；
It is characterized in that, being formed with junction termination structures, the junction termination structures above the channel layer and barrier layer interface
It is formed in the barrier layer, the junction termination structures extend close to the edge of drain electrode side to drain directions from grid, institute
The thickness for stating junction termination structures is gradually reduced from grid to drain directions, includes anion in the knot terminal.
2. power semiconductor according to claim 1, which is characterized in that the junction termination structures are one or more
It is a.
3. power semiconductor according to claim 1, which is characterized in that the junction termination structures are that linear type knot is whole
One of end structure, shaped form junction termination structures, ladder-like junction termination structures or a variety of combinations.
4. power semiconductor according to claim 1, which is characterized in that all or part of on the junction termination structures
There are source metal field plates.
5. power semiconductor according to claim 1, which is characterized in that the anion includes fluorine ion.
6. power semiconductor according to claim 1, which is characterized in that between the substrate and channel layer comprising at
Stratum nucleare and/or buffer layer.
7. a kind of manufacturing method of power semiconductor, which is characterized in that the manufacturing method includes:
One substrate is provided, and nucleating layer and/or buffer layer is formed on the substrate；
Channel layer is formed on the nucleating layer and/or buffer layer and barrier layer, channel layer and barrier layer interface are formed with two
Dimensional electron gas；
Source electrode, drain and gate are formed on the barrier layer, the grid is between source electrode and drain electrode；
Several junction termination structures are formed in the top of the channel layer and barrier layer interface, the junction termination structures are formed in institute
It states in barrier layer, the junction termination structures extend close to the edge of drain electrode side to drain directions from grid, the knot terminal
The thickness of structure is gradually reduced from grid to drain directions, includes anion in the knot terminal；
The knot terminal forming process are as follows:
Mask layer is formed on barrier layer；
Photoresist layer is formed on mask layer；
The photoresist layer on mask layer photoetching and develop using the mask plate with density dot matrix, the mask plate is from grid
Pole is gradually increased to drain directions exposure, forms the thickness changing trend exposure mask opposite with knot terminal layer thickness variation trend
Layer；
Ion implanting is carried out, if forming the junction termination structures that dry thickness is gradually reduced from grid to drain directions in barrier layer.
8. manufacturing method according to claim 7, it is characterised in that: change the shading dot matrix distribution on mask plate, with shape
One of the type that is in line junction termination structures, shaped form junction termination structures, ladder-like junction termination structures are a variety of.
9. manufacturing method according to claim 7, which is characterized in that the mask layer is same layer with photoresist layer.
10. manufacturing method according to claim 7, which is characterized in that the ion of the injection is fluorine ion.
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| CN107482050B (en) * | 2017-08-18 | 2020-02-07 | 珠海格力电器股份有限公司 | Terminal structure of power device and manufacturing method thereof |
| CN110085662A (en) * | 2019-04-25 | 2019-08-02 | 芜湖启迪半导体有限公司 | A kind of high voltage bearing HEMT device and preparation method |
| CN110112214A (en) * | 2019-04-25 | 2019-08-09 | 芜湖启迪半导体有限公司 | A kind of high voltage bearing HEMT device and preparation method |
| CN113097291B (en) * | 2021-03-31 | 2022-08-26 | 浙江集迈科微电子有限公司 | GaN device structure and preparation method thereof |
| CN117393597B (en) * | 2023-10-11 | 2024-06-25 | 上海新微半导体有限公司 | HEMT device and method for manufacturing the same |
| CN117894835B (en) * | 2024-03-14 | 2024-05-17 | 英诺赛科(苏州)半导体有限公司 | Gallium nitride semiconductor device and preparation method thereof |
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| CN104282735A (en) * | 2014-09-17 | 2015-01-14 | 电子科技大学 | Field effect transistor with anion injection passivation layer |
| CN104377241A (en) * | 2014-09-30 | 2015-02-25 | 苏州捷芯威半导体有限公司 | Power semiconductor device and manufacturing method thereof |
| CN104380458A (en) * | 2011-12-22 | 2015-02-25 | 阿沃吉有限公司 | Methods and systems for junction termination in gallium nitride materials using conductance modulation |
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| CN104380458A (en) * | 2011-12-22 | 2015-02-25 | 阿沃吉有限公司 | Methods and systems for junction termination in gallium nitride materials using conductance modulation |
| CN104282735A (en) * | 2014-09-17 | 2015-01-14 | 电子科技大学 | Field effect transistor with anion injection passivation layer |
| CN104377241A (en) * | 2014-09-30 | 2015-02-25 | 苏州捷芯威半导体有限公司 | Power semiconductor device and manufacturing method thereof |
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