CN104149023A - Chemical-mechanical polishing pad - Google Patents
Chemical-mechanical polishing pad Download PDFInfo
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- CN104149023A CN104149023A CN201410341023.9A CN201410341023A CN104149023A CN 104149023 A CN104149023 A CN 104149023A CN 201410341023 A CN201410341023 A CN 201410341023A CN 104149023 A CN104149023 A CN 104149023A
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- 238000005498 polishing Methods 0.000 title claims abstract description 195
- 230000003746 surface roughness Effects 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 229920000570 polyether Polymers 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 229920005862 polyol Polymers 0.000 claims description 5
- 150000003077 polyols Chemical class 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 30
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 8
- 239000002893 slag Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004005 microsphere Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical-mechanical polishing pad and solves the problem that an existing polishing pad is scratched easily and low in polishing efficiency. According to the technical scheme, the chemical-mechanical polishing pad comprises a polishing layer, a plurality of holes are formed in the polishing surface of the polishing layer, the center of the polishing surface is a circle center, and the holes are arranged into multiple rows of concentric rings different in diameter. The center of the polishing surface is an end point, and a plurality of grooves extending to the edge of the polishing surface are evenly radiated from the end point. The surface roughness of the polishing surface is below 15 micrometers. The polishing pad is simple in structure, capable of increased polishing removing efficiency and inhibiting scratches, and long in service life.
Description
Technical field
The present invention relates to a kind of chemical-mechanical planarization processing polishing pad, a kind of chemical mechanical polishing pads specifically.
Background technology
Chemical-mechanical planarization processing, i.e. chemically mechanical polishing (CMP), is for to semiconductor wafer, the base material of sapphire and so on carries out the common technology of planarization process.In conventional CMP, wafer is arranged on holder device, and wafer is contacted with the polishing pad on polishing disk in CMP equipment.Holder device provides controlled pressure to wafer, and wafer is pressed on polishing pad.Additional driving force makes polishing pad rotate with respect to wafer.Meanwhile, between wafer and polishing pad, provide a kind of Chemical composition that or other polishing solution.Thus, by chemical action and the mechanism of pad interface and slurries, the surface finish of wafer is flattened.
In CMP system, polishing pad has following functions: 1, can store polishing fluid, and it is transported to the machining area of workpiece, make polishing even.2, remove from workpiece polished surface the residuals (as polishing chip, polishing pad fragment etc.) that polishing process produces.3, transmit material and remove required mechanical load.4, maintain the required machinery of polishing process and chemical environment.Pad interface structure influence polishing pad and is stored, transports ability and the surface local stress gradient of polishing fluid, thereby has determined repeatability and the heterogeneity of polishing etc. between material removing rate, workpiece.And in existing conventional CMP system, by groove is set in pad interface, polishing velocity and polish results are improved, the arrangement of groove common are two kinds, a kind of is that center taking polishing pad is as the center of circle, many row's annular grooves are set, another kind is evenly perforate on polishing pad, hole in the same size, and spacing is identical.When above-mentioned two kinds of structures are used in the early stage, can play to a certain extent the effect of storage polishing fluid, but when after operation a period of time, there will be following problem: (1) deslagging is not smooth, can not make the smooth discharge of the fragment after polishing chip, silicon chip are removed, particulate in polishing fluid can stop up groove or the hole on polishing layer, causes the result of use of polishing pad to decline; (2) because deslagging is not smooth, scratch also can be brought in the groove of obstruction and hole, further affects polishing velocity and clearance, even can have influence on polishing effect.(3) polishing fluid can not be on polishing pad reasonable layout fast, thereby further affect polishing velocity.
Summary of the invention
The object of the invention is in order to solve the problems of the technologies described above, provide a kind of simple in structure, can effectively improve polishing removal efficiency and can suppress that scratch produces, the chemical mechanical polishing pads of long service life.
Polishing pad of the present invention at least includes polishing layer, has multiple holes taking the center of described burnishing surface as the center of circle on the burnishing surface of described polishing layer, and described multiple holes are arranged in the concentric annulus of the different path lengths of many rows; And, taking the center of burnishing surface as end points, evenly scatter many grooves that are extended down to burnishing surface edge; The surface roughness of described burnishing surface is below 15 μ m.
The aperture and/or the pitch of holes that in region by the polishing layer center of circle outside covering radius total length 30%-38%, form the hole of annulus are greater than aperture and/or the pitch of holes that other region forms the hole of annulus.
The aperture in the hole of described other region composition annulus is 0.1-10mm, and pitch of holes is 1-22mm.
In described other region, pitch of holes in same annulus equates, but pitch of holes in different annular has the trend progressively reducing from inside to outside.
The degree of depth in described hole more than 0.1mm and the degree of depth of described groove be not less than the degree of depth in hole.
The degree of depth of described groove is not less than 0.5mm, and width is 0.1-5mm.
Described groove is in the heart with homogeneous angular scatter distributions in burnishing surface, and distributed quantity is 4 × N bar, and 1≤N≤12.
Described polishing layer contains polyether polyols with reduced unsaturation matrix and is dispersed in the water-insoluble tiny balloon in matrix.
The diameter of described water-insoluble microballoon is distributed between 10 μ m-100 μ m.
Described hole is by forming by least one method in cutting method, die forming method or needle bar punch method.
Also comprise cushion, the bottom surface of described polishing layer is connected with cushion.
The bottom surface of described cushion is connected with supporting layer.
Inventor conducts in-depth research existing polishing pad, combine for groove structure and the pore structure of storing polishing fluid existing, make multiple holes be arranged in annulus on the one hand, the center of circle of many row's annulus is positioned at the center of polishing pad, because polishing fluid can better temporarily be stored compared with groove in hole, make multiple holes be aligned to many rows circular, the track rotating with respect to polishing object with polishing pad is identical, thereby polishing fluid in fine and close aperture is evenly distributed, can well play the effect of lubricated polishing, but the problem that makes polishing fluid poor fluidity is also deposited in hole simultaneously.On the other hand groove is extended to the edge of polishing pad as the outwards even scattering of end points taking the center of circle.Groove plays the effect of similar guiding, under rotation status, when being centrifuged, gets rid of near groove time the polishing fluid of slag inclusion, because groove is taking the center of burnishing surface as end points is all to the layout of outside scattering, therefore, the polishing fluid of slag inclusion is more easily to concentrating in groove and along with centrifugal force discharges along groove smoothly, thereby well solved the problem of deslagging, thereby avoid the blockage problem in groove and hole, thereby solve the series of problems bringing thus.
Further, inventor further finds, scratch also has certain relation with roughness, roughness is too high, have in large concavo-convex situation, especially large protuberance (as the protuberance of the remaining burr formation when forming groove) comes off and easily causes the scratch of polishing object in polishing process.In addition, in polishing process, compressed under the effect of pressure and the frictional heat etc. of the protuberance coming off in polishing pad, interact with the solids in polishing pad bits and polishing fluid and form lead thing (being referred to as slag in literary composition), these all can cause polishing object to be scratched in the time of polishing.By controlling roughness, scratch can effectively reduce polishing time, therefore, inventor is strict with the surface roughness of burnishing surface of polishing layer below 15 μ m, roughness control decapacitation prevents outside scratch, the function as groove and through hole be can also effectively bring into play, the function of polishing fluid and the function to outside deslagging particularly kept.
The width of described ditch groove should be at 0.1-5mm, is less than 0.1mm processing and is difficult for, be greater than 5mm the too fast service efficiency that causes of polishing fluid flowing velocity decline; The degree of depth should, more than 0.5mm, cause the polishing pad life-span too short lower than 0.5mm, the most deeply can run through whole polishing layer.There is no particular restriction for described groove width direction upper section shape, can make as U font and V font etc.
When described hole has the polishing of maintenance, supply with slurries, these slurries are distributed to more equably to the function of burnishing surface, but also there is buffing and the temporary transient function of being detained of used slurries the like waste (general designation slag) that the polishing of making produces.The flat shape in hole is not particularly limited, for example, can make circle, polygon and other irregular figure.Consider processing factors, preferably the flat shape of through hole is circular.The degree of depth in hole is not less than 0.1mm, the most deeply can run through whole polishing layer and form through hole, and preferably the degree of depth in hole is the 50%-100% of polishing layer thickness.
The aperture and/or the pitch of holes that in region (being non-polishing area) by the polishing layer center of circle outside covering radius total length 30%-38%, form the hole of annulus are greater than aperture and/or the pitch of holes that other region (being polishing area) forms the hole of annulus.Because polishing fluid normally splashes into the center of burnishing surface on polishing pad, make near aperture and the pitch of holes of the non-polishing area (by the region of the polishing layer center of circle outside covering radius total length 30%-38%) at polishing layer center larger, can better absorb fast and carry so a large amount of polishing fluids, because aperture is larger, fixed effect to the polishing fluid in hole is poor, also more easily make polishing fluid in hole under the action of the centrifugal to peripheral distribution, be convenient to the uniform of polishing fluid, and the polishing district that perimeter regions (being other region) except interior zone is burnishing surface, thereby the aperture in hole that need to form annulus is less, arrange more intensive, polishing fluid is better distributed in this district, improve polishing velocity and polishing effect.
The aperture that forms the hole of annulus in described other region is 0.1-10mm, and pitch of holes is 1-22mm.The aperture that forms the hole of annulus in the region of the described polishing layer center of circle outside covering radius total length 30%-38% is aperture 1-3 times of other region apertures, and pitch of holes is aperture 1-3 times of other region apertures.
Further preferred, in described other region, the pitch of holes in same annulus equates, but pitch of holes in different annular has the trend progressively reducing from inside to outside.That is to say, in other region, large compared with the pitch of holes of the annulus by burnishing surface perimembranous by the pitch of holes of the annulus at burnishing surface center, layout can make the much more intensive storage polishing fluids by the Kong Zhonggeng of burnishing surface perimembranous like this, is also beneficial to the derivation of slag inclusion polishing fluid.
Described polishing layer contains polyether polyols with reduced unsaturation matrix and is dispersed in the water-insoluble tiny balloon in matrix, and the diameter of described water-insoluble tiny balloon (abbreviation microballoon) is distributed between 10 μ m-100 μ m.Microsphere diameter is too little, and polishing fluid is difficult to store, and microsphere diameter is too large, and the abrasive dust in polishing process is difficult for guiding to be removed, and makes the mechanical strength of polishing layer and polishing clearance decline simultaneously.Described microspheres quality content accounts for the 0.1-50% of polishing layer quality, preferably 0.5-10%.Described polyether polyols with reduced unsaturation is the conventional material of manufacturing polishing layer, includes but not limited to polyethers TDI system, polyester TDI system, polyethers MDI system, polyethers HDI, polyethers PAPI system etc.
The Shore D hardness of described polishing layer reaches more than 30, is generally below 100, preferably 40D-80D.
There is no particular restriction for polishing layer shape of the present invention, as discoid, can suitably select according to burnishing device.Can make diameter 50-5000mm (preferably 200-2000mm), thickness 0.1-50mm (preferably 0.1-20mm).According to polishing object difference, if polishing object is sapphire, this polishing layer can be used as polishing pad and is directly installed on polishing disk, if polishing object is chip, can, at the bonding cushion in polishing layer bottom surface, further, can also after the bonding supporting layer in cushion bottom surface, be arranged on again on polishing disk.This supporting layer or cushioning layer material can adopt can give appropriate flexible organic material preparation, it is than polishing layer softness, by adding more soft supporting layer and/or cushion, even in the situation that polishing layer is thinner, also can prevent polishing time, the generation of the problem such as polishing layer floating or polishing layer surface curvature, can stably carry out polishing.The Shore D hardness of this supporting layer or cushion reaches 10-30D, preferably 15D-25D.Supporting layer or cushion can be both porous foamed bodies, can be also non-porous bodies, its thickness 0.1-5mm.
The manufacture method of polishing pad of the present invention can list: form in preparation after the general shape of required polishing layer, utilize machining to form groove and hole; Or, also can adopt the metal die of the mirror image pattern with groove and hole, polishing pad is shaped in metal die with polymer-filled, can form groove and hole on polishing layer and polishing layer simultaneously.On burnishing surface, process behind groove and hole, follow-uply pass through again machine finish or grinding, can well control the surface roughness (Ra) of polishing pad below 15 μ m.Surface roughness (Ra) is controlled at below 15 μ m, and decapacitation prevents from, outside scratch, can also effectively bringing into play the function as groove and through hole, particularly keeps the function of polishing fluid and the function to outside discharge discarded object.
Beneficial effect:
1, by Roughness Surface on Control lower below horizontal, in the process of polishing pad and the contact friction of polishing object, the scratch causing because of the injustice of polishing pad own reduces;
Groove and and through hole adopt the method for cutting method and die forming method to form, ensured to a certain extent flatness and the roughness of material surface, and the uniformity of material structure, reduced abrasive possibility;
3. through hole and groove, has brought into play the function that keeps the function of polishing fluid and discharge discarded object to outside.
4. by hole combining form and distribution density are set, more sparse through hole and/or larger through hole are set in burnishing surface center, in ensureing that polishing fluid has enough recoverable amounts on burnishing surface, reduce the invalid occupancy volume of the non-polishing friction area in burnishing surface center to polishing fluid, can supplement in time fresh polishing fluid to polishing area, accelerate chemical attack speed, thereby improve polishing velocity.
5. by groove combination form and distribution density are set, particularly ensureing under the prerequisite of polishing pad supporting function, suitably improve quantity and the dischargeable capacity of groove, can shift faster the abrasive dust in polishing process, improve the amount of flow of polishing fluid, thereby reduce the scratch of abrasive dust to wafer, also increased chemical attack speed, improved polishing velocity simultaneously.
Polishing pad structure of the present invention is simple, polishing effect is good, can make on the one hand polishing fluid Quick uniform distribute, improve polishing velocity and polishing effect, also can make on the other hand " slag " the smooth and easy discharge producing in polishing process, further improve polishing velocity and polishing effect, avoid abrading the very generation of problem, improve the service life of polishing pad.
Brief description of the drawings
Fig. 1 is the front view (only showing polishing layer plane half) of burnishing surface of the present invention;
Fig. 2 is the partial sectional view of groove;
Fig. 3 is the partial sectional view (in figure, two adjacent two holes are positioned on same annulus) in hole;
Fig. 4 is the right view of embodiment 10-20 polishing pad.
1-polishing layer, 1.1-groove, 1.2-hole, 1.3-annulus, 2-cushion, 3-supporting layer, A-region, B-region.
Detailed description of the invention
Surface roughness refers to the value (Ra) averaging from the absolute value of the difference of height of average line and coarse curve, is the minimum numerical value before polishing pad of the present invention uses.The tester of surface roughness (Ra) can be contact surface roughness (Ra) testers such as optical profile type surface roughness (Ra) testers such as three-dimensional surface structure elucidation microscope, sweep type laser microscope, and contact pin type surface roughness (Ra) meter.Surface roughness (Ra) numerical value is got the mean value of each visual field average surface roughness (Ra) numerical value of three different visuals field mensuration in the pad interface before use.
Embodiment:
Build mode according to polyurethane routine, in polyether polyols with reduced unsaturation, add water-insoluble tiny balloon (as the EXPANCEL551DE40d42 of Akzo Nobel manufacture, diameter is distributed in 10 μ m-100 μ m) to be mixed, mixture is poured in mould, high-temperature maturing moulding, obtain diameter 680mm, the rectangle sheet material of thickness 2.5mm.Then use discoid polishing layer that cutting processing machine (as Beijing finishing impression science and technology Group Co.,Ltd) is cut into diameter 650mm taking the burnishing surface center of polishing layer 1 as end points, evenly be processed to form the groove 1.1 of symmetry between two that n1 bar is extended down to burnishing surface edge, burnishing surface is divided into n1 equal portions.The width m1 of described groove 1.1, degree of depth h1 (referring to Fig. 2).Taking the center of burnishing surface as the center of circle, multiple holes 1.2 are arranged in the concentric annulus 1.3 of the different path lengths of many rows.Wherein, taking the center of burnishing surface as the center of circle, the many rows annulus 1.3 in the region A that 38% radius length covers is to be formed by diameter m3, degree of depth h3, many holes of spacing n3 1.2 (not shown)s.1.3 of many rows annulus in the B of other region are by diameter m2, degree of depth h2, multiple holes 1.2 (referring to Fig. 3) of spacing n2 form, wherein, embodiment 3, 4, in 8 and 14, in the B of region, there is following rule: the pitch of holes n2 that forms the hole 1.2 of same annulus 1.3 equates, but the pitch of holes n2 in different annular 1.3 has the trend progressively reducing from inside to outside, referring to Fig. 1, in the B of region, pitch of holes n2 the closer to annulus 1.3 mesopores 1.2 at burnishing surface center is larger, the density that hole is arranged is less, and the pitch of holes n2 of annulus 1.3 mesopores 1.2 of close burnishing surface perimembranous is less, large (the table 1 of the density that hole 1.2 is arranged, embodiment 3 in 2, 4, 8 and 14 have provided the excursion value of pitch of holes n2).The surface roughness (Ra) that adopts three-dimensional surface structure elucidation measurement microscope material, measurement result surface roughness (Ra) is 5.2 μ m.Directly use as polishing pad using this polishing layer 1.
In the present invention, described pitch of holes refers to the spacing in adjacent two holes in the same annulus of composition.
Adopt said method to obtain the polishing pad of embodiment 1-10, each parameter is in table 1.
Wherein, referring to Fig. 4, in embodiment 11-20, be also bonded with successively cushion 2 and supporting layer 3 in the bottom surface of polishing layer 1 (non-burnishing surface), use as polishing pad using this.Each parameter is in table 2.
Experimental example
The standard polishing pad (as IC1000, the IC1010 of DOW company of the U.S.) that is usually used in chip polishing on market is carried out to polishing performance evaluation comparison with polishing pad of the present invention.
(Suzhou He Ruite Electronic Special Equipment Science and Technology Ltd. manufactures respectively the polishing pad in embodiment 1-20 and comparative example to be arranged on to burnishing device, " 9B type ", " 16B type " polishing machine) fixed disk on, the rotary speed of fixed disk is at 40rpm, use chemical brightening solution (the Jiangsu Zhong Jing Photoelectric Co., Ltd. making under flow through twice dilution with 300cc/ minute, g-CUT5003SC type) by wafer polishing 10 minutes, evaluate at the state that uses polishing velocity, scratch, foreign matter and emptying aperture in various polishing pad situations.
Each assay method is as follows:
(1) polishing velocity: the thickness of measuring polishing front and back wafer with optics film thickness measuring instrument.
(2) having or not of scratch and foreign matter: with the burnishing surface of wafer after electron microscope observation polishing.
The evaluation criterion that scratch has or not is:
0: do not find scratch, 1: can find scratch.
The evaluation criterion that foreign matter has or not is:
0: do not find foreign matter, 1: can find foreign matter.
(3) emptying aperture state: with 400# ciamond grinder, pad interface is ground to the method finishing of 5 minutes, the then surperficial emptying aperture state through finishing with electron microscope observation.
Evaluation criterion is:
0: all emptying aperture openings in fact, 1: part emptying aperture stops up.
Above result is charged in table 1 and table 2 together.Specifically referring to table 1 and table 2:
As can be known from the results of Table 1, on market, the surface roughness of standard polishing pad IC1000 and IC1010 will be higher than the polishing pad in embodiment, on the burnishing surface of the polishing pad polishing of IC1000 and IC1010, can find scratch and foreign matter.In addition the emptying aperture after finishing is by Partial Blocking, and opening disappears, the groove opening periphery through hole particularly stopping up in finishing.And in the polishing pad of embodiment, burnishing surface surface roughness (Ra), all in reduced levels, therefore, is not almost found scratch and foreign matter on burnishing surface.After finishing, the emptying aperture on through hole and burnishing surface is complete opening almost, and polishing velocity will be higher than IC1000 and IC1010.
Claims (12)
1. a chemical mechanical polishing pads, at least includes polishing layer, has multiple holes on the burnishing surface of described polishing layer, it is characterized in that, taking the center of described burnishing surface as the center of circle, described multiple holes are arranged in the concentric annulus of the different path lengths of many rows; And, taking the center of burnishing surface as end points, evenly scatter many grooves that are extended down to burnishing surface edge; The surface roughness of described burnishing surface is below 15 μ m.
2. chemical mechanical polishing pads as claimed in claim 1, it is characterized in that, the aperture and/or the pitch of holes that in the region by the polishing layer center of circle outside covering radius total length 30%-38%, form the hole of annulus are greater than aperture and/or the pitch of holes that other region forms the hole of annulus.
3. chemical mechanical polishing pads as claimed in claim 2, is characterized in that, the aperture in the hole of described other region composition annulus is 0.1-10mm, and pitch of holes is 1-22mm.
4. chemical mechanical polishing pads as claimed in claim 2, is characterized in that, in described other region, pitch of holes in same annulus equates, but pitch of holes in different annular has the trend progressively reducing from inside to outside.
5. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, the degree of depth in described hole more than 0.1mm and the degree of depth of described groove be not less than the degree of depth in hole.
6. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, the degree of depth of described groove is not less than 0.5mm, and width is 0.1-5mm.
7. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, described groove is in the heart with homogeneous angular scatter distributions in burnishing surface, and distributed quantity is 4 × N bar, and 1≤N≤12.
8. the chemical mechanical polishing pads as described in claim 1-7 any one, is characterized in that, described polishing layer contains polyether polyols with reduced unsaturation matrix and is dispersed in the water-insoluble tiny balloon in matrix.
9. chemical mechanical polishing pads as claimed in claim 8, is characterized in that, the diameter of described water-insoluble microballoon is distributed between 10 μ m-100 μ m.
10. as claim 1-7 any one chemical mechanical polishing pads, it is characterized in that, described hole is by forming by least one method in cutting method, die forming method or needle bar punch method.
11. as claim 1-6 any one chemical mechanical polishing pads, it is characterized in that, also comprise cushion, the bottom surface of described polishing layer is connected with cushion.
12. chemical mechanical polishing pads as claimed in claim 9, is characterized in that, the bottom surface of described cushion is connected with supporting layer.
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| CN201410341023.9A CN104149023A (en) | 2014-07-17 | 2014-07-17 | Chemical-mechanical polishing pad |
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| CN201410341023.9A CN104149023A (en) | 2014-07-17 | 2014-07-17 | Chemical-mechanical polishing pad |
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| CN104149023A true CN104149023A (en) | 2014-11-19 |
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| CN201410341023.9A Pending CN104149023A (en) | 2014-07-17 | 2014-07-17 | Chemical-mechanical polishing pad |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105397617A (en) * | 2015-10-26 | 2016-03-16 | 上海华力微电子有限公司 | Grinding pad and replacing method thereof |
| CN107877360A (en) * | 2016-09-29 | 2018-04-06 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pads with consistent pad surface microtexture |
| CN108136564A (en) * | 2015-10-07 | 2018-06-08 | 3M创新有限公司 | Polishing pad and system and preparation and the method using polishing pad |
| CN110744444A (en) * | 2019-10-29 | 2020-02-04 | 武汉新芯集成电路制造有限公司 | Polishing pad and polishing apparatus |
| CN112207710A (en) * | 2019-07-10 | 2021-01-12 | Fns科技有限公司 | High strength polishing pad for polishing back side of wafer |
| CN112809550A (en) * | 2020-12-31 | 2021-05-18 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114074286A (en) * | 2020-08-17 | 2022-02-22 | 铠侠股份有限公司 | Polishing apparatus and polishing method |
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| CN108136564A (en) * | 2015-10-07 | 2018-06-08 | 3M创新有限公司 | Polishing pad and system and preparation and the method using polishing pad |
| CN105397617A (en) * | 2015-10-26 | 2016-03-16 | 上海华力微电子有限公司 | Grinding pad and replacing method thereof |
| CN107877360A (en) * | 2016-09-29 | 2018-04-06 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pads with consistent pad surface microtexture |
| CN112207710A (en) * | 2019-07-10 | 2021-01-12 | Fns科技有限公司 | High strength polishing pad for polishing back side of wafer |
| CN110744444A (en) * | 2019-10-29 | 2020-02-04 | 武汉新芯集成电路制造有限公司 | Polishing pad and polishing apparatus |
| CN110744444B (en) * | 2019-10-29 | 2022-02-15 | 武汉新芯集成电路制造有限公司 | Polishing pad and polishing apparatus |
| CN114074286B (en) * | 2020-08-17 | 2024-04-26 | 铠侠股份有限公司 | Grinding device and grinding method |
| CN114074286A (en) * | 2020-08-17 | 2022-02-22 | 铠侠股份有限公司 | Polishing apparatus and polishing method |
| TWI817281B (en) * | 2020-12-07 | 2023-10-01 | 南韓商Ｓｋｃ索密思有限公司 | Polishing pad sheet, polishing pad, and method for manufacturing semiconductor device |
| CN114762953A (en) * | 2020-12-30 | 2022-07-19 | Skc索密思株式会社 | Polishing pad, method for manufacturing polishing pad, and method for manufacturing semiconductor device |
| CN114762953B (en) * | 2020-12-30 | 2023-12-29 | Sk恩普士有限公司 | Polishing pad, method for producing polishing pad, and method for producing semiconductor device |
| CN112809550B (en) * | 2020-12-31 | 2022-04-22 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN112809550A (en) * | 2020-12-31 | 2021-05-18 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114274043B (en) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114274043A (en) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN117020936A (en) * | 2023-10-10 | 2023-11-10 | 青禾晶元(天津)半导体材料有限公司 | Photocatalysis composite polishing pad and preparation method and polishing method thereof |
| CN117020936B (en) * | 2023-10-10 | 2023-12-29 | 青禾晶元(天津)半导体材料有限公司 | Photocatalysis composite polishing pad and preparation method and polishing method thereof |
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