CN103730347B - Recycled silicon wafer texturing method - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 74
- 229910052710 silicon Inorganic materials 0.000 title description 70
- 239000010703 silicon Substances 0.000 title description 70
- 238000000034 method Methods 0.000 title description 32
- 235000012431 wafers Nutrition 0.000 description 65
- 239000007788 liquid Substances 0.000 description 24
- 239000002253 acid Substances 0.000 description 20
- 239000003513 alkali Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 18
- 239000000243 solution Substances 0.000 description 17
- 239000003814 drug Substances 0.000 description 16
- 239000000126 substance Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000005406 washing Methods 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 7
- 229910017604 nitric acid Inorganic materials 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229940079593 drug Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
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Abstract
本发明提供了一种再利用硅片的制绒方法,包括以下步骤:步骤S10:将制绒设备或湿法刻蚀设备的工艺槽的顶槽内的药液排空;步骤S20:使再利用硅片经过工艺槽的顶槽后进入碱洗槽进行碱洗;步骤S30:使碱洗后的再利用硅片进入酸槽。本发明的技术方案有效地解决了现有技术中再利用硅片易出现亮片以及变薄的问题。
The present invention provides a method for reusing silicon wafers for texturing, comprising the following steps: step S10: emptying the chemical solution in the top tank of the process tank of texturing equipment or wet etching equipment; step S20: making the The silicon wafers are used to pass through the top tank of the process tank and then enter the alkali washing tank for alkali washing; step S30: making the reused silicon wafers after alkali washing enter the acid tank. The technical scheme of the invention effectively solves the problems of sequins and thinning in the prior art when reusing silicon wafers.
Description
技术领域technical field
本发明涉及电池制造工艺技术领域,具体而言,涉及一种再利用硅片的制绒方法。The invention relates to the technical field of battery manufacturing technology, in particular to a texturing method for reusing silicon wafers.
背景技术Background technique
图1示出了现有技术中的电池片的制造流程示意图,如图1所示,电池片的制造流程主要包括制绒、扩散、湿法刻蚀、PECVD(等离子体增强化学气相沉积法)、印刷烧结以及测试包装等步骤。上述步骤的作用具体如下:Figure 1 shows a schematic diagram of the manufacturing process of the battery sheet in the prior art. As shown in Figure 1, the manufacturing process of the battery sheet mainly includes texturing, diffusion, wet etching, PECVD (plasma enhanced chemical vapor deposition) , printing and sintering, and testing and packaging steps. The functions of the above steps are as follows:
制绒:通过硝酸与氢氟酸的混合溶液对硅片表面进行制绒;去除硅片切割时造成的表面损伤层;在硅片表面形成高低不平的表面及大量的孔洞,增加电池片表面的受光面积,降低反射率,从而提高太阳电池的转换效率。Texturing: use a mixed solution of nitric acid and hydrofluoric acid to texture the surface of the silicon wafer; remove the surface damage layer caused by the cutting of the silicon wafer; form a rough surface and a large number of holes on the surface of the silicon wafer to increase the surface of the cell. The light-receiving area reduces the reflectivity, thereby improving the conversion efficiency of the solar cell.
扩散:在P型衬底硅上扩散一层磷层,形成了一层P-N结。Diffusion: A layer of phosphorus is diffused on the P-type substrate silicon to form a P-N junction.
湿法刻蚀:通过硝酸与氢氟酸的混合溶液对硅片进行刻蚀;刻蚀硅片边沿P-N结,避免电池片漏电;抛光电池背面,起到镜面效果,使得阳光反射回硅片里面,多次利用。Wet etching: Etch the silicon wafer with a mixed solution of nitric acid and hydrofluoric acid; etch the P-N junction on the edge of the silicon wafer to avoid battery leakage; polish the back of the battery to have a mirror effect, so that sunlight can be reflected back into the silicon wafer , used multiple times.
PECVD:利用低温等离子体作能量源,样品置于低气压下辉光放电的电极上,利用辉光放电(或另加发热体)使样品升温到预定的温度,然后通入适量的反应气体,气体经一系列化学反应和等离子体反应,在样品表面形成固态薄膜。PECVD: Using low-temperature plasma as the energy source, the sample is placed on the electrode of glow discharge under low pressure, and the sample is heated to a predetermined temperature by glow discharge (or an additional heating element), and then an appropriate amount of reaction gas is introduced. The gas forms a solid film on the surface of the sample through a series of chemical reactions and plasma reactions.
印刷烧结:丝网印刷是利用印版非图文部分丝网孔封闭而不能透过油墨、图文部分丝网孔通透能透过油墨的原理进行印刷的。将丝网张紧并牢固地固定在网框上,采用手工或者光化学的方法,在丝网上制作出能透过油墨的图文部分和网孔封闭不能透过油墨的非图文部分。印刷时将油墨放于印版一侧,用刮墨板(刮刀)在丝网印版上的油墨部位施加一定压力,同时向丝网的另一端移动。在此过程,油墨在刮刀的挤压下从图文部分的丝网通孔中漏至承印物上,从而完成一次印刷。Printing and sintering: screen printing is printed by using the principle that the screen holes of the non-graphic part of the printing plate are closed and cannot pass through the ink, and the screen holes of the graphic part are transparent and can pass through the ink. Tension the screen and firmly fix it on the screen frame, and use manual or photochemical methods to make graphic and text parts that can penetrate ink and non-graphic and text parts that cannot penetrate ink when the mesh is closed. When printing, put the ink on one side of the printing plate, apply a certain pressure on the ink part on the screen printing plate with a squeegee (squeegee), and move to the other end of the screen at the same time. In this process, the ink leaks from the screen through holes in the graphic part to the substrate under the extrusion of the scraper, thus completing a printing.
制绒、扩散、湿法刻蚀、PECVD以及印刷各个工序均会有不合格品产生,上述不合格品称作再利用硅片,上述再利用硅片需要进行再次处理。图2示出了再利用硅片的制绒方法的流程示意图。如图2所示,再利用硅片的制绒方法包括步骤:装载;使再利用硅片依次通过制绒槽(其内含有HNO3和HF的混合液体)、碱洗槽(其内含有KOH液体)以及酸槽(其内含有HCL和HF的混合液体);热风干燥。在制绒槽、碱洗槽和酸槽之后还设有DI水(去离子水)洗槽。Each process of texturing, diffusion, wet etching, PECVD, and printing will produce unqualified products. The above-mentioned unqualified products are called recycled silicon wafers, and the above-mentioned recycled silicon wafers need to be processed again. Fig. 2 shows a schematic flow chart of the texturing method for reusing silicon wafers. As shown in Figure 2, the texturing method of reusing silicon chips comprises the steps: loading; making the reusing silicon chips pass through the texturing tank (containing the mixed liquid of HNO3 and HF in it), the alkali washing tank (containing KOH in it) liquid) and acid tank (which contains a mixed liquid of HCL and HF); hot air drying. There is also a DI water (deionized water) washing tank after the texturing tank, alkali washing tank and acid tank.
再利用硅片经过一次或多次制绒处理后,会出现不同程度的亮片,而且部分亮片晶格比较明显,容易造成组件花片。硅片的再利用会增加电池片的亮片、花片数量,降低成品电池片的外观等级处理,增加生产成本。此外,再利用硅片变的比较薄,容易碎。硅片的二次再利用处理方法会使电池片转换效率低,不合格比例高。After one or more texturing treatments on silicon wafers, different degrees of sequins will appear, and some sequin lattices are more obvious, which is easy to cause module mosaics. The reuse of silicon wafers will increase the number of sequins and flowers of the cells, reduce the appearance level of the finished cells, and increase the production cost. In addition, recycled silicon wafers become relatively thin and easily broken. The secondary reuse treatment method of silicon wafers will lead to low conversion efficiency of cells and a high proportion of unqualified cells.
发明内容Contents of the invention
本发明旨在提供一种再利用硅片的制绒方法,以解决现有技术中再利用硅片易出现亮片以及变薄的问题。The present invention aims to provide a texturing method for reusing silicon wafers to solve the problems in the prior art that the reused silicon wafers are prone to sequins and thinning.
为了实现上述目的,根据本发明的一个方面,提供了一种再利用硅片的制绒方法,包括以下步骤:步骤S10:将制绒设备或湿法刻蚀设备的工艺槽的顶槽内的药液排空;步骤S20:使再利用硅片经过工艺槽的顶槽后进入碱洗槽进行碱洗;步骤S30:使碱洗后的再利用硅片进入酸槽。In order to achieve the above object, according to one aspect of the present invention, there is provided a method for reusing silicon wafers for texturing, comprising the following steps: Step S10: the top tank of the process tank of texturing equipment or wet etching equipment Evacuating the liquid medicine; step S20: making the reused silicon chips pass through the top tank of the process tank and then enter the alkali cleaning tank for alkaline cleaning; step S30: making the recycled silicon chips after alkali cleaning enter the acid tank.
进一步地,工艺槽的顶槽内设有相对设置的上滚轮和下滚轮,在步骤S10中,药液排空后清洗上滚轮和下滚轮,以去除上滚轮和下滚轮上残留的药液。Further, an upper roller and a lower roller are arranged oppositely in the top tank of the process tank, and in step S10, the upper roller and the lower roller are cleaned after the chemical solution is emptied, so as to remove the residual chemical solution on the upper roller and the lower roller.
进一步地,在步骤S20中,使再利用硅片的制绒面朝下经过上滚轮和下滚轮。Further, in step S20, make the textured surface of the recycled silicon wafer pass the upper roller and the lower roller downward.
进一步地,步骤S20和步骤S30之间以及步骤S30之后还包括水洗步骤。Further, a water washing step is also included between step S20 and step S30 and after step S30.
进一步地,工艺槽的顶槽内置有HNO3和HF的混合溶液。Further, the top tank of the process tank is built with a mixed solution of HNO 3 and HF.
进一步地,碱洗槽内置有KOH溶液。Further, the alkali washing tank is built with KOH solution.
进一步地,制绒设备的酸槽内置有HCL和HF的混合溶液;湿法刻蚀设备的酸槽内置有HF溶液。Further, a mixed solution of HCL and HF is built in the acid tank of the texturing equipment; HF solution is built in the acid tank of the wet etching equipment.
应用本发明的技术方案,将制绒设备或湿法刻蚀设备的工艺槽的顶槽内的药液排空,这样再利用硅片经过工艺槽的顶槽时,仅与残留的药液反应,或者不与药液反应,而是直接进入碱洗槽和酸槽。这样能够最大程度地保留硅片第一次制绒的绒面效果和硅片的厚度,能够有效地降低酸的耗量,降低碎片率,提升转换效率,提高成品合格率以及降低电池片的亮片,减少因电池亮片而增加组件外观花片。Applying the technical scheme of the present invention, the chemical solution in the top tank of the process tank of the texturing equipment or wet etching equipment is emptied, so that when the reused silicon wafer passes through the top tank of the process tank, it only reacts with the residual chemical solution , or do not react with the liquid medicine, but directly enter the alkali washing tank and acid tank. In this way, the suede effect of the first texture of the silicon wafer and the thickness of the silicon wafer can be preserved to the greatest extent, which can effectively reduce the consumption of acid, reduce the fragmentation rate, improve the conversion efficiency, improve the qualified rate of finished products and reduce the sequins of the cell , to reduce the increase in the appearance of components due to battery sequins.
附图说明Description of drawings
构成本申请的一部分的说明书附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:The accompanying drawings constituting a part of the present application are used to provide a further understanding of the present invention, and the schematic embodiments and descriptions of the present invention are used to explain the present invention, and do not constitute an improper limitation of the present invention. In the attached picture:
图1示出了现有技术中的电池片的制造流程示意图;FIG. 1 shows a schematic diagram of the manufacturing process of a battery sheet in the prior art;
图2示出了现有技术中的再利用硅片的制绒方法的流程示意图;以及Fig. 2 shows the schematic flow sheet of the texturing method of reusing silicon chip in the prior art; And
图3示出了根据本发明的再利用硅片的制绒方法的实施例的流程示意图。Fig. 3 shows a schematic flow chart of an embodiment of the texturing method for reusing silicon wafers according to the present invention.
具体实施方式detailed description
需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.
针对背景技术中提到的再利用硅片易出现亮片以及变薄的问题,发明人进行了一系列的实验验证后发现易出现亮片以及变薄的原因如下:Aiming at the problem of sequins and thinning in the reuse of silicon wafers mentioned in the background technology, the inventor conducted a series of experimental verifications and found that the reasons for the easy occurrence of sequins and thinning are as follows:
硅片经过制绒槽时,通过硝酸与氢氟酸的混合溶液对硅片表面进行制绒。上述工艺的目的是1)去除硅片切割时造成的表面损伤层。2)在硅片表面形成高低不平的表面及大量的孔洞,增加电池片表面的受光面积,降低反射率,从而提高太阳电池的转换效率。而再利用硅片的制绒方法与硅片第一次制绒方法相同,也需要经过制绒槽,这样里面的药液会损伤绒面,也即使得硅片的高低不平的表面(绒面)逐渐变得平整,进而使硅片容易变成类似镜面效果的亮片。此外,再次或者多次经过制绒槽会在硅片的绒面进行多次反应,这样会减少硅片的厚度,进而容易出现变薄的问题。When the silicon wafer passes through the texturing tank, the surface of the silicon wafer is textured by a mixed solution of nitric acid and hydrofluoric acid. The purpose of the above process is to 1) remove the surface damage layer caused when the silicon wafer is cut. 2) Form uneven surfaces and a large number of holes on the surface of the silicon wafer to increase the light-receiving area on the surface of the cell and reduce the reflectivity, thereby improving the conversion efficiency of the solar cell. The texturing method of reusing silicon wafers is the same as the first texturing method of silicon wafers, and also needs to pass through the texturing tank, so that the liquid medicine inside will damage the suede surface, and even the uneven surface of the silicon wafer (texture surface) ) gradually become flat, which makes the silicon wafer easy to become a mirror-like sequin. In addition, passing through the texturing tank again or multiple times will cause multiple reactions on the texturized surface of the silicon wafer, which will reduce the thickness of the silicon wafer, which is prone to thinning problems.
针对上述原因,本申请提出了一种有效的解决方案。如图3所示,再利用硅片的制绒方法的优选实施方式包括以下步骤:For the above reasons, the present application proposes an effective solution. As shown in Figure 3, the preferred embodiment of the texturing method of reusing silicon chip comprises the following steps:
步骤S10:将制绒设备或湿法刻蚀设备的工艺槽的顶槽(制绒槽或刻蚀槽)内的药液排空;Step S10: Empty the chemical solution in the top tank (texture tank or etching tank) of the process tank of the texturing equipment or wet etching equipment;
步骤S20:使再利用硅片经过制绒槽后进入碱洗槽进行碱洗,碱洗用来清除PN结;Step S20: Make the reused silicon wafer pass through the texturing tank and then enter the alkali washing tank for alkali washing, and the alkali washing is used to remove the PN junction;
步骤S30:使碱洗后的再利用硅片进入酸槽。Step S30: Make the reused silicon wafer after alkali cleaning enter the acid tank.
应用本优选实施方式中,可以使用制绒设备或湿法刻蚀设备进行再利用硅片的制绒。工艺槽包括顶槽和底槽,底槽存储药液,顶槽内的药液与硅片直接接触。在本优选实施方式中,将工艺槽的顶槽内的药液排空,这样再利用硅片经过制绒槽时,仅与残留的药液反应,或者不与药液反应,而是直接进入碱洗槽和酸槽。这样能够最大程度地保留硅片第一次制绒的绒面效果和硅片的厚度,能够有效地降低酸的耗量,降低碎片率,提升转换效率,提高成品合格率以及降低电池片的亮片,减少因电池亮片而增加组件外观花片。In this preferred embodiment, texturing equipment or wet etching equipment can be used for texturing the reused silicon wafers. The process tank includes a top tank and a bottom tank, the bottom tank stores the chemical solution, and the chemical solution in the top tank is in direct contact with the silicon wafer. In this preferred embodiment, the chemical solution in the top tank of the process tank is emptied, so that when the reused silicon wafer passes through the texturing tank, it only reacts with the residual chemical solution, or does not react with the chemical solution, but directly enters the Alkali and acid tanks. In this way, the suede effect of the first texture of the silicon wafer and the thickness of the silicon wafer can be preserved to the greatest extent, which can effectively reduce the consumption of acid, reduce the fragmentation rate, improve the conversion efficiency, improve the qualified rate of finished products and reduce the sequins of the cell , to reduce the increase in the appearance of components due to battery sequins.
优选地,利用制绒设备时,酸槽中需要配比一定浓度HF、HCL混合药液,其中HCL量的浓度要比现有技术中的高点,原因是HCL可以清除硅片表面的金属杂质,而HF可以净化硅片洁净度。Preferably, when using texturing equipment, a certain concentration of HF and HCL mixed chemical solution needs to be proportioned in the acid tank, wherein the concentration of HCL is higher than that in the prior art, because HCL can remove metal impurities on the surface of silicon wafers , while HF can purify the cleanliness of silicon wafers.
制绒槽内设有相对设置的上滚轮和下滚轮,在步骤S10中,药液排出后清洗上滚轮和下滚轮,以去除上滚轮和下滚轮上残留的药液。在将制绒槽内的药液排出后可以利用清水清洗上滚轮和下滚轮,这样使得上滚轮和下滚轮上完全没有药液。An upper roller and a lower roller are arranged oppositely in the texturing tank, and in step S10, the upper roller and the lower roller are cleaned after the liquid medicine is discharged, so as to remove the liquid medicine remaining on the upper roller and the lower roller. Clear water can be utilized to clean the upper roller and the lower roller after the medicinal solution in the texturing tank is discharged, so that there is no medicinal solution on the upper roller and the lower roller.
或者,在步骤S10中,药液排出后无需清洗上滚轮和下滚轮,上滚轮和下滚轮上具有残留的药液。这样,制造再利用硅片时,一些再利用硅片经过时会将上滚轮和下滚轮上残留的药液携带走,这样也会使得上滚轮和下滚轮上完全没有药液。Alternatively, in step S10 , there is no need to clean the upper roller and the lower roller after the liquid medicine is discharged, and there is residual medicine liquid on the upper roller and the lower roller. Like this, when making reused silicon chip, some reused silicon chip can carry away the liquid medicine remaining on the upper roller and the lower roller when passing through, so also can make there is no liquid medicine on the upper roller and the lower roller completely.
为了便于后续的扩散工艺,在步骤S20中,使再利用硅片的制绒面朝下经过上滚轮和下滚轮。此外,经过实验验证,当上滚轮和下滚轮上具有残留的药液时,再利用硅片的制绒面朝上经过碱洗槽和酸槽后,发现再利用硅片的制绒面上有滚轮印。这样,影响再利用硅片镀膜后的颜色美观,造成表面不合格。主要原因是滚轮上有HF、HNO3的混合药,硅片与滚轮接触的地方腐蚀过高,形成滚轮印。而当上滚轮和下滚轮上具有残留的药液时,再利用硅片的制绒面朝下经过碱洗槽和酸槽后,再利用硅片的制绒面上没有滚轮印,主要原因是硅片与下滚轮接触的面积增大,整张硅片的面积都会接触到滚轮,参与药液反应比较均匀。In order to facilitate the subsequent diffusion process, in step S20 , the textured side of the recycled silicon wafer passes the upper roller and the lower roller downward. In addition, it has been verified by experiments that when there is residual liquid medicine on the upper roller and the lower roller, after the textured side of the reused silicon wafer passes through the alkali cleaning tank and the acid tank, it is found that the textured side of the recycled silicon wafer has Roller print. Like this, affect the color attractive in appearance of reused silicon wafer after coating, cause the surface to be unqualified. The main reason is that there is a mixed drug of HF and HNO 3 on the roller, and the place where the silicon wafer contacts the roller is corroded too much, forming a roller mark. And when there is residual liquid medicine on the upper roller and the lower roller, after the textured surface of the reused silicon wafer passes through the alkali washing tank and the acid tank, there is no roller print on the textured surface of the reused silicon wafer. The contact area between the silicon wafer and the lower roller increases, and the entire area of the silicon wafer will touch the roller, and the reaction of the liquid medicine is relatively uniform.
下面结合具体实施例进一步说明本发明的有益效果。The beneficial effects of the present invention will be further described below in conjunction with specific examples.
实施例一Embodiment one
把制绒设备的制绒槽(HF、HNO3的混合药液槽)顶槽药液排回底槽,保证制绒槽里的上滚轮和下滚轮上没有一点的HF、HNO3的混合药液。配比一定浓度的KOH、HF、HCL后,其中KOH槽的电导率在12-15,酸槽的电导率在650-690。再利用硅片直接经过碱洗槽和酸槽后,再利用硅片表面干净,暗纹正常,片的亮度和正常原硅片制绒后的绒面差不多,扩散方阻的均匀性较差5.1%,电池片的效率为17.31%,不合格比例为4.8%。Drain the chemical solution from the top tank of the texturing tank (HF, HNO 3 mixed solution tank) back to the bottom tank to ensure that there is no mixed drug of HF and HNO 3 on the upper and lower rollers in the texturing tank liquid. After mixing a certain concentration of KOH, HF, and HCL, the conductivity of the KOH tank is 12-15, and the conductivity of the acid tank is 650-690. After reusing the silicon wafer directly through the alkali washing tank and acid tank, the surface of the reused silicon wafer is clean, the dark lines are normal, the brightness of the wafer is similar to that of the textured surface of the normal original silicon wafer, and the uniformity of the diffusion resistance is poor 5.1 %, the efficiency of the cells is 17.31%, and the unqualified ratio is 4.8%.
实施例二Embodiment two
更改碱槽的浓度,提高碱槽的电导率为18,把制绒设备的制绒槽(HF、HNO3的混合药液槽)顶槽药液排回底槽,保证制绒槽里的上滚轮和下滚轮上有一些HF、HNO3的混合药液。把再利用硅片制绒面朝上,直接经过碱槽、酸槽后,发现一些再利用硅片的制绒面还是有滚轮印,原因是硅片局部腐蚀过高,不是硅片在工艺参与化学反应而生成的多孔硅。Change the concentration of the alkali tank, increase the conductivity of the alkali tank to 18, and drain the liquid medicine from the top tank of the texturing tank (HF, HNO3 mixed liquid tank) of the texturing equipment back to the bottom tank to ensure that the upper roller in the texturing tank There are some mixed liquid medicines of HF and HNO3 on the lower and lower rollers. Turn the textured side of the recycled silicon wafer up, and pass through the alkali tank and acid tank directly, and found that some recycled silicon wafers still have roller marks on the textured side. The reason is that the local corrosion of the silicon wafer is too high, not because the silicon wafer is involved in the process. Porous silicon produced by a chemical reaction.
根据实施例二的实验条件,制绒设备运行速度设定为2.1跟踪再利用的电池片效率,数据如下:According to the experimental conditions of Example 2, the operating speed of the texturing equipment is set to 2.1 to track the efficiency of the reused cells, and the data are as follows:
其他参数设定不变,更改设备运行速度为1.8,跟踪再利用的电池片效率,数据如下:Other parameters are set unchanged, and the operating speed of the equipment is changed to 1.8, and the efficiency of the reused cells is tracked. The data are as follows:
其中,Uoc是指电池片的电压、Isc指电流、Rser指串联、Rsh指并联、FF指填充、Ncell指转化效率、Irev1指漏电、Count指片数。Among them, Uoc refers to the voltage of the cell, Isc refers to the current, Rser refers to series connection, Rsh refers to parallel connection, FF refers to filling, Ncell refers to conversion efficiency, Irev1 refers to leakage, and Count refers to the number of cells.
实施例三Embodiment Three
把制绒设备的工艺槽(HF、HNO3的混合药液槽)顶槽药液排回底槽,保证工艺槽里的上滚轮和下滚轮上有一些HF、HNO3的混合药液,碱槽、酸槽浓度配比同于实施例二。再利用硅片制绒面朝下,直接经过碱槽、酸槽后,再利用硅片的制绒面上没有滚轮印,主要原因是硅片与下滚轮接触的面积增大(整张硅片的面积都会接触到滚轮,参与药液反应比较均匀。下滚轮上携带一定量HF、HNO3的混合药液,能在一定程度上清洁硅片表面的洁净度。Drain the chemical liquid from the top tank of the process tank (HF, HNO 3 mixed liquid tank) of the texturing equipment back to the bottom tank to ensure that there are some HF, HNO 3 mixed chemical liquid, alkali Groove, acid tank concentration ratio is the same as embodiment two. The textured surface of the silicon wafer is facing down, and after directly passing through the alkali tank and the acid tank, there is no roller mark on the textured surface of the silicon wafer. The main reason is that the contact area between the silicon wafer and the lower roller increases (the entire silicon wafer The area of the silicon wafer will be in contact with the roller, and participate in the liquid reaction more evenly. The lower roller carries a certain amount of mixed liquid of HF and HNO 3 , which can clean the surface of the silicon wafer to a certain extent.
在碱洗槽和酸槽的导电率相同,设备运行速度相同的前提下,现有技术的再利用工艺与本申请的再利用工艺表面片统计,碎片率统计和组件花片统计结果如下:Under the premise that the conductivity of the alkaline cleaning tank and the acid tank are the same, and the operating speed of the equipment is the same, the statistics of surface flakes, fragmentation rate statistics and component flower flakes of the prior art reuse process and the reuse process of the present application are as follows:
其中,实验时,设备运行速度为2.0m/min,碱槽电导率为15ms,酸槽电导率为660ms。自动补液量HNO3为25片/45ml,HF为25片/92ml。现有技术的再利用制绒槽的参数为速度2.5m/min,温度为10°。Among them, during the experiment, the operating speed of the equipment was 2.0m/min, the conductivity of the alkali tank was 15ms, and the conductivity of the acid tank was 660ms. The automatic rehydration volume is 25 tablets/45ml for HNO3 and 25 tablets/92ml for HF. The parameters of the reutilized texturing tank of the prior art are speed 2.5m/min and temperature 10°.
其中,一般一块组件是由60片电池片串联起来,表面所占比例是指一块组件内有39片晶格发亮的电池片。Among them, a module is generally connected in series by 60 cells, and the proportion of the surface refers to 39 cells with bright lattices in a module.
通过小批量生产对比,现有技术的再利用工艺与本申请的再利用工艺生产的电池片参数如下:Through the comparison of small batch production, the parameters of the cells produced by the recycling process of the prior art and the recycling process of the present application are as follows:
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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