CN103580652B - 本地振荡源产生器与相关通信系统及本地振荡源产生方法 - Google Patents
本地振荡源产生器与相关通信系统及本地振荡源产生方法 Download PDFInfo
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CN201210277756.1A CN103580652B (zh) | 2012-08-07 | 2012-08-07 | 本地振荡源产生器与相关通信系统及本地振荡源产生方法 |
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CN103580652B true CN103580652B (zh) | 2016-08-31 |
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Families Citing this family (3)
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US10084438B2 (en) * | 2016-03-16 | 2018-09-25 | Mediatek Inc. | Clock generator using passive mixer and associated clock generating method |
TWI607631B (zh) * | 2016-06-24 | 2017-12-01 | 瑞昱半導體股份有限公司 | 用於降低傳輸干擾的系統及其方法 |
US10771296B1 (en) * | 2019-06-25 | 2020-09-08 | Realtek Semiconductor Corp. | 2.4GHz ISM band zero-IF transceiver and method thereof |
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CN1299538A (zh) * | 1999-03-01 | 2001-06-13 | 三菱电机株式会社 | 收发信装置 |
US6828863B2 (en) * | 2001-12-12 | 2004-12-07 | Sony International (Europe) Gmbh | Multi-band frequency synthesizer for mobile terminals |
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US7003274B1 (en) * | 2003-03-05 | 2006-02-21 | Cisco Systems Wireless Networking (Australia) Pty Limited | Frequency synthesizer and synthesis method for generating a multiband local oscillator signal |
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CN1299538A (zh) * | 1999-03-01 | 2001-06-13 | 三菱电机株式会社 | 收发信装置 |
US6828863B2 (en) * | 2001-12-12 | 2004-12-07 | Sony International (Europe) Gmbh | Multi-band frequency synthesizer for mobile terminals |
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Effective date of registration: 20201027 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 518057 Guangdong city of Shenzhen province Shenzhen city Nanshan District High Road South Chinese Technology Development Institute Technology Park Building No. three tower 4-5 No. Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201027 Address after: No.4-5 tower building, No.3, scientific research and Development Park, Chinese Academy of science and technology development, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 518057 Guangdong city of Shenzhen province Shenzhen city Nanshan District High Road South Chinese Technology Development Institute Technology Park Building No. three tower 4-5 No. Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |