CN103035623B - Static protector and manufacturing method - Google Patents
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- CN103035623B CN103035623B CN201210507052.9A CN201210507052A CN103035623B CN 103035623 B CN103035623 B CN 103035623B CN 201210507052 A CN201210507052 A CN 201210507052A CN 103035623 B CN103035623 B CN 103035623B
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Abstract
The invention relates to a static protector and a manufacturing method. Pairing electrodes arranged at intervals are arranged on the upper surfaces of an insulation substrate through photoetching and etching technology, wherein both the upper surface and the lower surface of the insulation substrate are coated with metal plates, and coupling electrode portions of the pairing electrodes can be parallelly arranged at intervals. Gaps arranged at intervals are arranged among sides staggered and directly opposite to each other of the coupling electrode portions of the pairing electrodes, and the width of the gaps arranged at intervals among the coupling electrode portions of the pairing electrodes are narrowed to 10-50um by electroplating. Polycrystal nanometer pressure-sensitive materials are printed in the gaps of 10-50um among the coupling electrode portions of the pairing electrodes, and the polycrystal nanometer pressure-sensitive materials are in a conducted state under a high voltage and in an insulating state in a low voltage. The static protector can fully utilize the length of components to reduce electric current density of the gaps arranged at intervals when the distant gaps release static electricity, and electric discharge life of the electrodes is prolonged, meanwhile the distant gaps which are arranged at intervals and 10-50um ensure the triggering requirement of a low voltage, and good protective capacity of the components to low-voltage static electricity is achieved.
Description
Technical field
the present invention relates to circuit protecting element---the electrostatic protector to the overvoltage protection that electrostatic produces, also relate to the manufacture method of this electrostatic protector.
Background technology
electrostatic potential difference is that make electronics move from a non-conductor to another non-conductor and produce, its voltage can reach thousands of volt because the friction of two non-conductors.When produced electrostatic discharges to the electronic devices and components of voltage-sensitive, the damage of electronic devices and components can be caused.A lot, IEC is the tailor international standard of IEC61000-4-2 for this reason, specifies the test to static discharge and degree of protection thereof for annual electronic devices and components damaged because of electrostatic.The contact discharge electric pressure of defined has 2,4,6,8kV, tetra-grades, and peak current reaches 30A, and the time that electric current rises to is 0.7-1ns.Electrostatic protection device of the present invention, in order to the requirement of shelter meeting IEC61000-4-2 defined is developed.
electro-static discharge protector has polytype, and wherein a kind of is realized by the pressure sensitive of filled high polymer between two very close electrodes, and the resistance of this high molecular pressure sensitive changes with the change of voltage.When the electrode connected with input in electrostatic protector contacts with high-voltage static power; thus and when forming high potential difference between the electrode of another ground connection; macromolecule pressure sensitive changes low resistance state into from high-resistance state; electrostatic energy is imported ground, thus protects other components and parts be connected with input.Have and numerous patent shows such electrostatic discharge protector, its different place is electrode shape, support and hermetically-sealed construction, and the making of material.
united States Patent (USP) 5,974,661 to disclose one PCB be base material, makes electrode, make pressure sensitive, be covered on pressure sensitive with macromolecular material with macromolecular material and conductive particle, formation protective layer with plating and etching method.United States Patent (USP) 6,023,028 is also with similar method and material, makes similar parastat.
united States Patent (USP) 7,612,976 to disclose one PCB be material, makes the method for parastat, the shape of its electrode pair and US5 of sandwich construction, 974,661 and US6,023, the electric part described in 028 is to similar, be termination relative with plane, in the narrow slit between relative termination, be filled with high molecular pressure sensitive; Unlike the PCB layer having the round-meshed PCB layer of brill and sealing up and down respectively of electrode pair, the macromolecular material of variable resistance is sealed in cylindrical space.
the device that Chinese patent CN 101079342B discloses and US7,612,976 is similar, be also with a pair termination relatively and between have narrow slit to separate electrode, in narrow slit, add brill circular hole, in circular hole, filled high polymer pressure sensitive forms the structure of gap discharge.With US7,612,976 unlike with two-layer electrode to instead of use individual layer.
the device that Chinese patent CN101221847 discloses, with US5,974,661 and US6,023,028 is basically identical, is also on termination, to form gap with relative electrode pair, and filled high polymer pressure sensitive reaches the object of release electrostatic in gap, difference is with criss-cross two pairs of electrodes.
above-mentioned disclosed patented technology, all with termination relatively and between form the electrode pair of narrow slit, form the electrode pair of electric discharge, the length of narrow slit, by the restriction of the width occupied by device widths and encapsulant, because the electric current of electric discharge can reach 30A, current density between shorter narrow slit can be relatively large, the end face of electrode can be easily ablated, narrow slit is progressively broadened, thus makes trigger voltage increase, even under lower electrostatic potential, device does not trigger, and affects the protective capacities of device to low-voltage electrostatic.
carry out release electrostatic at electric interpolar discharge, the size in gap determines the height of trigger voltage, and gap is less, and trigger voltage is lower, larger to the protection range of circuit.Chinese patent CN101079342 gap used is 0.1mm (100 microns), and gap dislikes excessive, causes the protective capacities of device to low-voltage electrostatic poor.
Summary of the invention
first object of the present invention be to provide adopt the relative electrode pair in side and the spaced slot formed between side at the electrostatic protector of 10-50um; this gap is that two the parallel coupling electrode portions extended by the length direction along substrate are formed between relative side; the length that can make full use of device is like this to reduce the current density of spaced slot when release electrostatic; extend the discharge life of electrode; the spaced slot of 10-50um ensure that the requirement of lower voltage triggered simultaneously, makes device have good protective capacities to low-voltage electrostatic.
second object of the present invention is to provide the manufacture method of processing above-mentioned electrostatic protector.
in order to achieve the above object, the present invention adopts following technical scheme:
first the present invention relates to a kind of electrostatic protector, comprises
the substrate of insulation, the length of this substrate is greater than width;
be disposed on the electrode on the upper surface of described substrate for a pair, each described electrode all has the coupling electrode portion that the length direction along described substrate extends, the coupling electrode portion of electrode described in a pair is arranged in parallel, and be spaced along the Width of described substrate, the length direction that the coupling electrode portion of this pair of electrodes has along described substrate extends and the side faced, and forms the gap of width 10-50um between this side faced;
can under high voltages in conducting state and can at lower voltages in the polycrystalline Nano layer of pressure sensitive of state of insulation, in the described gap between the coupling electrode portion that this polycrystalline Nano layer of pressure sensitive is filled in described pair of electrodes.
in this electrostatic protector, the coupling electrode portion parallel interval arrangement of electrode pair, and gap is formed between just right side, the polycrystalline Nano layer of pressure sensitive of variable resistance is filled with in gap, the width in gap only has 10 to 50 microns (being preferably 10-20um), the trigger protection of low voltage can be realized, make the protection range of circuit very large; And the length in gap extends along the length direction of substrate, the width of termination can be deducted close to the total length of device, the length that can make full use of device is like this to reduce the current density of gap when release electrostatic, extend the discharge life of electrode, avoid the excessive ablation electrode of current density to make the gap trigger voltage that broadens increase.Polycrystalline Nano layer of pressure sensitive is under high voltages in low resistance state; at lower voltages in high-impedance state; here high voltage refers to be the electrostatic potential of needs protection---be 4-15kV by the standard of IEC61000-4-2; low-voltage refers to be the maximum rated voltage that circuit normally uses voltage or electrostatic protector; for example, we specify it to be 35V.Transition region between high-low voltage, the resistance of polycrystalline Nano layer of pressure sensitive has gradual and sudden change, but is not use problem too deeply concerned.This electrostatic protector is in parallel with protected electronic devices and components in use; the electrode connected at electrostatic protector and input contacts with high-voltage static power; thus and when forming high potential difference between the electrode of another ground connection; polycrystalline Nano layer of pressure sensitive changes low resistance state into from high-resistance state; electrostatic energy is imported ground, thus protects the components and parts be connected with input.
the polycrystalline Nano pressure sensitive forming described polycrystalline Nano layer of pressure sensitive is by silicon rubber, the metallic of diameter 2-5um, the polycrystalline Nano semiconductor particle being wrapped in the 20-400nm on described metallic surface mixes, described polycrystalline Nano semiconductor particle adopts nickel oxide 12-33%(percentage by weight), calcium stannate 8-29%, strontium titanates 7-35%, boron oxide 0.3-5% and bismuth oxide 0.2-4%, 550-900 DEG C of high-temperature roasting synthesis is coordinated through twice mechanochemical reaction, described polycrystalline Nano semiconductor particle possesses under high voltages in conducting state, characteristic at lower voltages in state of insulation.Polycrystalline Nano semiconductor particle is wrapped in the surface of the conductive metal particles of the large order of magnitude of granularity, conductive layer when insulating barrier during formation low-voltage and high voltage.The resistance ratio nano-multicrystal semiconductor particle of metallic is lower, and both form good pressure sensitive in silicon rubber.Polycrystalline Nano semiconductor particle can isolate conductive metallic, avoids conductive metal particles contact with each other and cause leakage current excessive.
when synthesizing described polycrystalline Nano semiconductor particle, first 100-300rpm high speed centrifugation ball milling is carried out to raw material nickel oxide, calcium stannate, strontium titanates, boron oxide and bismuth oxide, the crystal grain of each material is merged, then by vacuum evaporation granulation, then again by 550-900 DEG C of high-temperature heat treatment, each material is merged further, then 100-300rpm high speed centrifugation ball milling is carried out again, and then by vacuum evaporation granulation, 550-900 DEG C of high-temperature heat treatment, finally pulverize, vacuumize.
described electrostatic protector also comprises macromolecule cover layer, in the coupling electrode portion that this macromolecule cover layer covers described pair of electrodes and described polycrystalline Nano layer of pressure sensitive.This macromolecule cover layer plays guard electrode and pressure sensitive.Moreover, this macromolecule cover layer also has the function of conducting electrostatic, containing conducting particles in this macromolecule cover layer.This low conducting polymer cover layer is similar to antistatic packaging material, is in macromolecular material epoxy resin, add a certain amount of long-chain nanometer carbon black, makes it to have certain electric conductivity.This sub-conductive layer forms coupling path, conducting electrostatic by the upper surface of two electrodes.Macromolecule cover layer adopts the epoxy resin layer containing nanometer chain carbon black, and wherein the weight percent content of nanometer chain carbon black is 1-15%.The sheet resistance of the content adjustable macromolecule covering layer material of adjustment carbon black, thus adjust its electrostatic conducting ability and static elimination ability when low electric-force gradient when high electric-force gradient.Conducting particles in macromolecule cladding material, except adopting carbon black, can also adopt the graphite similar to carbon black effect.This macromolecule overcoat can play protection coupling electrode and polycrystalline Nano pressure sensitive simultaneously.
during concrete enforcement, described each electrode all has termination electrode portion, the termination electrode portion of described pair of electrodes is separately positioned in the two ends of described upper surface of base plate, described coupling electrode portion stretches out from the described termination electrode portion of corresponding one end, termination electrode portion towards the other end extends, and and has clearance space between the termination electrode portion of this other end.The setting of clearance space is the coupling electrode not short circuit in order to ensure both sides.
on described each electrode, the width in described termination electrode portion is all wider than the width in described coupling electrode portion.The reliability be connected with pcb board to increase end like this.On electrostatic protector, overall width that two coupling electrode portions add gap is the whole width being narrower than device, is to make coupling electrode portion and polycrystalline Nano layer of pressure sensitive be protected by macromolecule cover layer completely like this.
on described each electrode, described coupling electrode portion, described termination electrode portion are all integrally formed.
the two ends of the lower surface of described substrate is respectively arranged with lower surface termination electrode, the relative both ends of the surface of described substrate are respectively arranged with end electrode, and described end electrode is electrically connected the described termination electrode portion of described substrate upper and lower surface corresponding end and described lower surface termination electrode.Lower surface termination electrode in use, is welded on pcb board by this electrostatic protector, and the electrode of upper surface of base plate is electrically connected by end electrode, lower surface termination electrode and pcb board.
make the method for electrostatic protector, comprise the following steps:
(1) upper surface all covering the insulated substrate of metallic plate in upper and lower surface is made into spaced electrode by photoetching, etching technique, ensure that the coupling electrode portion of paired described electrode parallels to be spaced, the coupling electrode portion of described paired electrode, in the gap forming interval between just right side that is staggered, then makes the gap width constriction at interval between the coupling electrode portion of described paired electrode become 10-50um by plating;
(2) print polycrystalline Nano pressure sensitive in the 10-50um gap between the coupling electrode portion of described paired electrode, this polycrystalline Nano pressure sensitive, under high voltages in conducting state, is state of insulation at lower voltages.
in this preparation method, paired electrode is prepared by the method for photoetching, etching and re-plating, can form the spaced slot (being preferably the gap of 10-20um) of controlled 10-50um, to meet the requirement that low-voltage triggers.
in the coupling electrode portion that the method is also included in polycrystalline Nano pressure sensitive and the described paired electrode printed, printing is containing the macromolecule cladding material of conducting particles, form macromolecule cover layer, described macromolecule cladding material is made up of epoxy resin and nanometer chain carbon black, and the weight percent content of carbon black is 1-15%.The graphite similar to carbon black effect, also can be included in selectable particulate materials.
the method of batch making electrostatic protector, comprises the following steps:
(1) upper and lower surface is adopted all to cover the insulated substrate of metallic plate, on the upper surface of described substrate, the pattern characterizing multipair described electrode is produced by photoetching, etching technique, the lower surface of described substrate is produced the pattern characterizing multipair described lower surface termination electrode, in each electrode of described upper surface of base plate, described termination electrode portion, described coupling electrode portion are all integrally formed, and the gap width between the coupling electrode portion of paired described electrode is 20-60um;
(2) pass through the gap of electroplating between the coupling electrode portion of paired electrode described in constriction, make gap width be narrowed 10-50um;
(3) print polycrystalline Nano pressure sensitive in the 10-50um gap between the coupling electrode portion of described multipair electrode, and solidify;
(4) the macromolecule cladding material of printing containing conductive particle in the coupling electrode portion of described polycrystalline Nano pressure sensitive and described multipair electrode, and solidify;
(5) described substrate is cut, cut out the two ends of electrostatic protector, and the pattern-cut characterizing multipair described electrode is become the independently paired described electrode of electrostatic protector, and the pattern-cut characterizing multipair described lower surface termination electrode is become the independently paired described lower surface termination electrode of electrostatic protector;
(6) end electrode is set on the cut surface forming termination, makes this end electrode be electrically connected the described electrode of upper and lower surface corresponding end and described lower surface termination electrode;
(7) cut out the side of electrostatic protector, namely obtain single electrostatic protector.
in this batch making method, upper surface electrode is produced to, lower surface termination electrode pair by photoetching, etching technique in the upper and lower surface of insulated substrate, after etching, upper surface electrode is 20-60um to the gap width between side, can remove as one of them endpoint foundation completely with the metal bottom gap, and then electroplate constriction gap, time and the electric current of plating are determined by gap gap width after the etching, and plating comparatively etching easily controls.After plating, gap width becomes 10-50um, is preferably 10-20um, is generally 14-18um.Then print polycrystalline Nano pressure sensitive, macromolecule cladding material, then cut out termination, make end electrode, finally cut out side again, namely obtain single electrostatic protector.The method by producing multiple electrostatic protector simultaneously on bulk substrate, and then cutting and separating goes out individual devices, realizes the batch machining of electrostatic protector, enhances productivity.
in step (6), the cut surface forming termination adsorbs nanometer carbon black, the end face of insulation is conducted electricity, then on nanometer carbon black, plating forms described end electrode.
Embodiment
structure and the manufacture method of electrostatic protector of the present invention is set forth further below in conjunction with accompanying drawing.
shown in Fig. 1-3, a kind of electrostatic protector, comprise the substrate 1 of insulation, pair of electrodes 2, polycrystalline Nano layer of pressure sensitive 3, macromolecule cover layer 4, pair of electrodes 2 is disposed on the upper surface of substrate 1, each electrode 2 all has termination electrode portion 21, along the coupling electrode portion 22 that the length direction of substrate 1 extends, here we by observer in the face of Fig. 1 time left and right directions be defined as the length direction of substrate 1, above-below direction is defined as the Width of substrate 1, the length of substrate 1 is greater than width, termination electrode portion 21 is arranged on the termination of substrate 1 upper surface, and cover whole width, coupling electrode portion 22 stretches out from the termination electrode portion 21 of corresponding one end, termination electrode portion 21 towards the other end extends, and and have clearance space between the termination electrode portion 21 of this other end, the existence of this clearance space, ensure that two electrodes 2 are arranged separately, can not short circuit.When designing, the coupling electrode portion 22 of one end can be made as far as possible close to the termination electrode portion 21 of the other end, the length in coupling electrode portion 22 can be increased so as far as possible, thus the length in gap between the coupling electrode portion 22 that can increase pair of electrodes 2.In FIG, the coupling electrode portion 22 of pair of electrodes 2 parallels setting, and be spaced along the Width of substrate 1, the length direction that the coupling electrode portion 22 of this pair of electrodes 2 has along substrate 1 extends and the side faced, the gap of width 10-50um is formed between this side faced, be preferably the gap of 10-20um, less gap determines lower trigger voltage, meets the requirement that low-voltage triggers.Mention above, increase the length in coupling electrode portion 22 as far as possible thus the length in gap can be increased, then the length in gap can deduct the width in termination electrode portion 21 close to the total length of device, the length that can make full use of device is like this to reduce the current density of gap when release electrostatic, extend the discharge life of electrode, avoid the excessive ablation electrode of current density make gap broaden trigger voltage rise, ensure device to low-voltage electrostatic, there is good protective capacities.
in FIG, polycrystalline Nano layer of pressure sensitive 3 is filled with in gap between the coupling electrode portion 22 of pair of electrodes 2, polycrystalline Nano pressure sensitive is not only filled out and is filled with gap, but also covered on the edge in coupling electrode portion 22, ensure fully contacting of polycrystalline Nano layer of pressure sensitive 3 and a pair coupling electrode portion 22 like this.The resistance of polycrystalline Nano layer of pressure sensitive 3 changes with change in voltage, and possessing can be the characteristic that conducting state can be also state of insulation at lower voltages under high voltages.Polycrystalline Nano pressure sensitive is mixed by the metallic of silicon rubber, diameter 2-5um, the polycrystalline Nano semiconductor particle of 20-400nm that is wrapped in metallic surface, polycrystalline Nano semiconductor particle adopts nickel oxide 12-33%(percentage by weight), calcium stannate 8-29%, strontium titanates 7-35%, boron oxide 0.3-5% and bismuth oxide 0.2-4%, coordinate 550-900 DEG C of high-temperature roasting synthesis through twice mechanochemical reaction.Specifically, when synthesised polycrystalline Nano semiconductor particles, first 100-300rpm high speed centrifugation ball milling is carried out to raw material nickel oxide, calcium stannate, strontium titanates, boron oxide and bismuth oxide, the crystal grain of each material is merged, then by vacuum evaporation granulation, then again by 550-900 DEG C of high-temperature heat treatment, each material is merged further, then 100-300rpm high speed centrifugation ball milling is carried out again, and then by vacuum evaporation granulation, 550-900 DEG C of high-temperature heat treatment, finally pulverizes, vacuumize.Polycrystalline Nano semiconductor particle, under high voltages in conducting state, is state of insulation at lower voltages.This polycrystalline Nano semiconductor particle is wrapped in the surface of the conductive metal particles of the large order of magnitude of granularity, conductive layer when insulating barrier during formation low-voltage and high voltage.The resistance ratio nano-multicrystal semiconductor particle of metallic is lower, and both form good pressure sensitive in silicon rubber.Polycrystalline Nano semiconductor particle can isolate conductive metallic, avoids conductive metal particles contact with each other and cause leakage current excessive.Above-mentioned high voltage refer to be needs protection electrostatic potential---be 4-15kV by the standard of IEC61000-4-2, low-voltage refers to be the maximum rated voltage that circuit normally uses voltage or electrostatic protector, and in the present embodiment, low-voltage is 35V.Transition region between high-low voltage, the resistance of polycrystalline Nano layer of pressure sensitive has gradual and sudden change, but is not use problem too deeply concerned.
the coupling electrode portion 22 and polycrystalline Nano layer of pressure sensitive 3 of pair of electrodes 2 are coated with the macromolecule cover layer 4 containing conducting particles, as shown in Figure 2.This low conducting polymer cover layer is similar to antistatic packaging material, is in high molecular material epoxy resin, add a certain amount of long-chain nanometer carbon black, makes it to have certain electric conductivity.This sub-conductive layer forms coupling path by the upper surface of two electrodes 2, and this macromolecule cover layer 4 has guard electrode and polycrystalline Nano pressure sensitive simultaneously, and the function of conducting electrostatic.In the macromolecule covering layer material be made up of epoxy resin and nano level long-chain carbon black or graphite, the weight percent content of carbon black or graphite is 1-15%.The sheet resistance of the content adjustable macromolecule covering layer material of adjustment carbon black or graphite, thus adjust its electrostatic conducting ability and static elimination ability when low electric-force gradient when high electric-force gradient.The experiment proved that, the macromolecule cover layer 4 being added with conducting particles can reduce trigger voltage and Clamping voltages, and increases its stability.
on each electrode 2, coupling electrode portion 22, termination electrode portion 21 is all integrally formed produces.And the width in termination electrode portion 21 is all wider than the width in coupling electrode portion 22, be the reliability be connected with pcb board to increase end like this.On electrostatic protector, overall width that two coupling electrode portions 22 add gap is the whole width being narrower than device, is to make coupling electrode portion and polycrystalline Nano layer of pressure sensitive be protected by macromolecule cover layer completely like this.
in figure 3, the two ends of the lower surface of substrate 1 is respectively arranged with lower surface termination electrode 6, the relative both ends of the surface of substrate 1 are respectively arranged with end electrode 5, and end electrode 5 is electrically connected termination electrode portion 21 and the lower surface termination electrode 6 of substrate 1 upper and lower surface corresponding end.Like this when lower surface termination electrode 6 is welded on pcb board, the electrode 2 of upper surface of base plate is electrically connected with pcb board by end electrode 5, lower surface termination electrode 6.In actual production process, also can carry out multilayer plating on termination electrode portion 21, end electrode 5, lower surface termination electrode 6, form the electrodeposited coating 7 shielded.
make the method for electrostatic protector, comprise the following steps: (1) is made into spaced electrode at the two-sided upper surface being covered with the insulated substrate of metallic plate by photoetching, etching technique, ensure that the coupling electrode portion of paired electrode parallels to be spaced, the coupling electrode portion of paired electrode, in the gap forming interval between just right side that is staggered, then makes the gap constriction at interval between the coupling electrode portion of paired electrode become 10-50um by plating; (2) print polycrystalline Nano pressure sensitive in the 10-50um gap between the coupling electrode portion of paired electrode, this polycrystalline Nano pressure sensitive, under high voltages in conducting state, is state of insulation at lower voltages; (3) in the coupling electrode portion of the polycrystalline Nano pressure sensitive printed and paired electrode, printing, containing the macromolecule cladding material of conducting particles, forms macromolecule cover layer.Provide specific embodiment of the method for a batch making below:
(1) insulated substrate of the equal copper-clad plate of upper and lower surface is adopted, on the upper surface of substrate, the pattern characterizing multipair electrode is produced by photoetching, etching technique, the lower surface of substrate is produced the pattern characterizing multipair lower surface termination electrode, in each electrode of upper surface of base plate, termination electrode portion, coupling electrode portion are all integrally formed, and the gap between the coupling electrode portion of paired electrode is 20-60um;
(2) pass through the gap of electroplating between the coupling electrode portion of constriction paired electrode, make gap be narrowed 10-50um, the time of plating and electric current are determined by gap gap width after the etching, plating comparatively etching easily control;
(3) polycrystalline Nano pressure sensitive is printed in the 10-50um gap between the coupling electrode portion of multipair electrode, and solidify, this polycrystalline Nano pressure sensitive is by silicon rubber, the metallic of diameter 2-5um, the polycrystalline Nano semiconductor particle being wrapped in the 20-400nm on described metallic surface mixes, polycrystalline Nano semiconductor particle adopts nickel oxide, calcium stannate, strontium titanates, boron oxide and bismuth oxide, high-temperature roasting is coordinated to synthesize through twice mechanochemical reaction, polycrystalline Nano semiconductor particle possesses under high voltages in conducting state, characteristic at lower voltages in state of insulation,
(4) in the coupling electrode portion of polycrystalline Nano pressure sensitive and multipair electrode, print macromolecule cladding material, and solidify, this macromolecule cladding material is made up of epoxy resin and nanometer chain carbon black or graphite, and the content of carbon black or graphite is 1-15%;
(5) substrate is cut, cut out the two ends of electrostatic protector, and the pattern-cut characterizing multipair electrode is become the independently paired electrode of electrostatic protector, and the pattern-cut characterizing multipair lower surface termination electrode is become the independently paired lower surface termination electrode of electrostatic protector;
(6) on the cut surface forming termination, adsorb nanometer carbon black, then on nanometer carbon black, plating forms end electrode, makes this end electrode be electrically connected electrode and the lower surface termination electrode of upper and lower surface corresponding end;
(7) cut out the side of electrostatic protector, namely obtain single electrostatic protector.
this manufacture method specifically implemented by producing multiple electrostatic protector simultaneously on bulk substrate, and then cutting and separating goes out individual devices, realizes the batch machining of electrostatic protector, enhances productivity.The electrostatic protector produced is functional, stable, long service life, meets the requirement of IEC61000-4-2 completely.
Accompanying drawing explanation
accompanying drawing 1 is the upper surface schematic diagram of electrostatic protector in the present invention, not shown macromolecule cover layer;
accompanying drawing 2 is the upper surface schematic diagram of electrostatic protector in the present invention, and macromolecule cover layer is only shown;
accompanying drawing 3 is the schematic side view of electrostatic protector in the present invention, the polycrystalline Nano layer of pressure sensitive below not shown macromolecule cover layer and coupling electrode portion.
Claims (12)
1. an electrostatic protector, is characterized in that: comprise
The substrate of insulation, the length of this substrate is greater than width;
Be disposed on the electrode on the upper surface of described substrate for a pair, each described electrode all has the coupling electrode portion that the length direction along described substrate extends, the coupling electrode portion of electrode described in a pair parallels setting, and be spaced along the Width of described substrate, the length direction that the coupling electrode portion of this pair of electrodes has along described substrate extends and the side faced, and forms the gap of width 10-50um between this side faced;
Can under high voltages in conducting state and can at lower voltages in the polycrystalline Nano layer of pressure sensitive of state of insulation, in the described gap between the coupling electrode portion that this polycrystalline Nano layer of pressure sensitive is filled in described pair of electrodes;
The polycrystalline Nano pressure sensitive forming described polycrystalline Nano layer of pressure sensitive is mixed by the metallic of silicon rubber, diameter 2-5um, the polycrystalline Nano semiconductor particle of 20-400nm, described polycrystalline Nano semiconductor particle is wrapped in described metallic surface
Described polycrystalline Nano semiconductor particle adopts nickel oxide 12-33%(percentage by weight), calcium stannate 8-29%, strontium titanates 7-35%, boron oxide 0.3-5% and bismuth oxide 0.2-4%, coordinate 550-900 DEG C of high-temperature roasting synthesis through twice mechanochemical reaction, described polycrystalline Nano semiconductor particle can under high voltages in conducting state and at lower voltages in state of insulation.
2. electrostatic protector according to claim 1, it is characterized in that: when synthesizing described polycrystalline Nano semiconductor particle, first to raw material nickel oxide, calcium stannate, strontium titanates, boron oxide and bismuth oxide carry out 100-300rpm high speed centrifugation ball milling, the crystal grain of each material is merged, then by vacuum evaporation granulation, then again by 550-900 DEG C of high-temperature heat treatment, each material is merged further, then 100-300rpm high speed centrifugation ball milling is carried out again, and then by vacuum evaporation granulation, 550-900 DEG C of high-temperature heat treatment, finally pulverize, vacuumize.
3. electrostatic protector according to claim 1, is characterized in that: the width in described gap is 10-20um.
4. electrostatic protector according to claim 1; it is characterized in that: described electrostatic protector also comprises macromolecule cover layer; in the coupling electrode portion that this macromolecule cover layer covers described pair of electrodes and described polycrystalline Nano layer of pressure sensitive; this macromolecule cover layer is the epoxy resin layer containing nano level chain carbon black or graphite; the weight percent content of described nano level chain carbon black or graphite is 1-15%, and this macromolecule cover layer forms electric coupling by the upper surface in the coupling electrode portion of described pair of electrodes.
5. electrostatic protector according to claim 1; it is characterized in that: described each electrode all has termination electrode portion; the termination electrode portion of described pair of electrodes is separately positioned in the two ends of described upper surface of base plate; described coupling electrode portion stretches out from the described termination electrode portion of corresponding one end; termination electrode portion towards the other end extends, and and has clearance space between the termination electrode portion of this other end.
6. electrostatic protector according to claim 5, is characterized in that: on described each electrode, and the width in described termination electrode portion is all wider than the width in described coupling electrode portion.
7. electrostatic protector according to claim 5, is characterized in that: on described each electrode, and described coupling electrode portion, described termination electrode portion are all integrally formed.
8. electrostatic protector according to claim 5; it is characterized in that: in the two ends of the lower surface of described substrate, be respectively arranged with lower surface termination electrode; the relative both ends of the surface of described substrate are respectively arranged with end electrode, and described end electrode is electrically connected the described termination electrode portion of described substrate upper and lower surface corresponding end and described lower surface termination electrode.
9. make the method for electrostatic protector as claimed in claim 1, it is characterized in that: comprise the following steps:
(1) upper surface all covering the insulated substrate of metallic plate in upper and lower surface is made into spaced electrode by photoetching, etching technique, ensure that the coupling electrode portion of paired described electrode parallels to be spaced, the coupling electrode portion of described paired electrode, in the gap forming interval between just right side that is staggered, then makes the gap width constriction at interval between the coupling electrode portion of described paired electrode become 10-50um by plating;
(2) print polycrystalline Nano pressure sensitive in the 10-50um gap between the coupling electrode portion of described paired electrode, this polycrystalline Nano pressure sensitive, under high voltages in conducting state, is state of insulation at lower voltages.
10. method according to claim 9, it is characterized in that: in the coupling electrode portion that the method is also included in polycrystalline Nano pressure sensitive and the described paired electrode printed, printing is containing the macromolecule cladding material of conducting particles, form macromolecule cover layer, described macromolecule cladding material is made up of epoxy resin and nano level chain carbon black or flake graphite, and the weight percent content of carbon black or flake graphite is 1-15%.
The method of 11. batch making electrostatic protector as claimed in claim 8, is characterized in that: comprise the following steps:
(1) upper and lower surface is adopted all to cover the insulated substrate of metallic plate, on the upper surface of described substrate, the pattern characterizing multipair described electrode is produced by photoetching, etching technique, the lower surface of described substrate is produced the pattern characterizing multipair described lower surface termination electrode, in each electrode of described upper surface of base plate, described termination electrode portion, described coupling electrode portion are all integrally formed, and the gap width between the coupling electrode portion of paired described electrode is 20-60um;
(2) pass through the gap of electroplating between the coupling electrode portion of paired electrode described in constriction, make gap width be narrowed 10-50um;
(3) print polycrystalline Nano pressure sensitive in the 10-50um gap between the coupling electrode portion of described multipair electrode, and solidify;
(4) the macromolecule cladding material of printing containing conductive particle in the coupling electrode portion of described polycrystalline Nano pressure sensitive and described multipair electrode, and solidify;
(5) described substrate is cut, cut out the two ends of electrostatic protector, and the pattern-cut characterizing multipair described electrode is become the independently paired described electrode of electrostatic protector, and the pattern-cut characterizing multipair described lower surface termination electrode is become the independently paired described lower surface termination electrode of electrostatic protector;
(6) end electrode is set on the cut surface forming termination, makes this end electrode be electrically connected the described electrode of upper and lower surface corresponding end and described lower surface termination electrode;
(7) cut out the side of electrostatic protector, namely obtain single electrostatic protector.
12. methods according to claim 11, is characterized in that: in step (6), and the cut surface forming termination adsorbs nanometer carbon black, and then on nanometer carbon black, plating forms described end electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210507052.9A CN103035623B (en) | 2012-12-03 | 2012-12-03 | Static protector and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210507052.9A CN103035623B (en) | 2012-12-03 | 2012-12-03 | Static protector and manufacturing method |
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| CN105720043A (en) * | 2014-12-05 | 2016-06-29 | Aem科技(苏州)股份有限公司 | Static protector and manufacturing method therefor |
| CN112770614A (en) * | 2020-12-07 | 2021-05-07 | 深圳顺络电子股份有限公司 | Electrostatic suppressor and manufacturing method thereof |
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| CN102341978A (en) * | 2009-03-05 | 2012-02-01 | 昭和电工株式会社 | Composition for filling discharge gap and electrostatic discharge protection member |
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