CN102495239A - Device for simulating front-end technology by oscilloscope microwave thin film circuit - Google Patents
Device for simulating front-end technology by oscilloscope microwave thin film circuit Download PDFInfo
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- CN102495239A CN102495239A CN2011104102138A CN201110410213A CN102495239A CN 102495239 A CN102495239 A CN 102495239A CN 2011104102138 A CN2011104102138 A CN 2011104102138A CN 201110410213 A CN201110410213 A CN 201110410213A CN 102495239 A CN102495239 A CN 102495239A
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Abstract
The invention provides a front-end technology simulated by an oscilloscope microwave thin film circuit. An ultrathin line circuit graph is made on a ceramic substrate by adopting a semiconductor manufacturing process; and a function of simulating a front end by an oscilloscope is realized by integrating a resistor and a microwave capacitor on the substrate. According to the technology, the volume of the simulated front end can be reduced effectively, interference among levels of the simulated front end is reduced, and extremely high processing precision can be realized; furthermore, the high-frequency performance is much higher than that of a printed circuit board (PCB) process; and the problems of high-frequency signal loss, distortion and the like are solved.
Description
Technical field
The present invention proposes a kind of oscillograph microwave thin film circuit AFE(analog front end) technology, and signal condition work such as the amplification of realization high-bandwidth signals, decay, impedance transformation, filtering belong to the signal Processing field.
Background technology
Conventional oscillograph AFE(analog front end) adopts traditional P CB technology usually, and its shortcoming is that the relative dielectric constant high frequency is unstable, and volume is big, and crosstalking between each grade is big, and high frequency characteristics is poor; Along with science and technology is constantly progressive, traditional technology has satisfied not the demand that modernized high request is measured.A kind of oscillograph microwave thin film circuit AFE(analog front end) technology that the present invention proposes well solves these problems.
Summary of the invention
The technical matters that the present invention will solve is to adopt the oscillograph AFE(analog front end) of traditional PCB technology to exist the relative dielectric constant high frequency unstable, and volume is big, and crosstalking between each grade is big, the shortcoming of high frequency characteristics difference.
For realizing the foregoing invention purpose; The present invention proposes a kind of device of oscillograph microwave thin film circuit AFE(analog front end) technology; It is characterized in that: adopt semiconductor fabrication process on ceramic substrate, to make the superfine line circuitous pattern, integrated resistor, microwave capacitors device are accomplished oscillograph AFE(analog front end) function on this substrate simultaneously.
Said ceramic substrate is aluminium oxide ceramic substrate or aluminium nitride ceramics substrate or beryllium oxide ceramics substrate.
Said microwave capacitors device adopts the multi-layer ceramics burning techniques.
The present invention is than the advantage of prior art: use ceramic bases can effectively reduce the volume of AFE(analog front end); Reduce crosstalking between each grade of AFE(analog front end); Can realize fabulous machining precision; Can realize the high frequency performance more much higher, solve problems such as high-frequency signal is lost, distortion than PCB technology.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
The present invention proposes a kind of device of oscillograph microwave thin film circuit AFE(analog front end) technology, and this technology adopts semiconductor fabrication process, through magnetron sputtering; Graphical photoetching, the dry method wet etching is electroplated technologies such as thickening; (aluminium oxide, aluminium nitride, beryllia etc.) are made the superfine line circuitous pattern on ceramic substrate; While integrated resistor on substrate, microwave capacitors device are accomplished oscillograph AFE(analog front end) function.
Wherein the microwave capacitors device is based on the multi-layer ceramics burning techniques.In process of production, metal alloy electrodes layer and low-loss ceramic insulating layer of multilayer high conductivity are staggered, thereby obtain needed capacitance.Then, synthetic lamination is carried out high-temperature firing, sinter it into single chip architecture.This technology satisfies the needs of high capacity radio-frequency capacitor and high power capacitor well.
Claims (5)
1. the device of oscillograph microwave thin film circuit AFE(analog front end) technology; It is characterized in that: adopt semiconductor fabrication process on ceramic substrate, to make the superfine line circuitous pattern, integrated resistor, microwave capacitors device are accomplished oscillograph AFE(analog front end) function on this substrate simultaneously.
2. the device of oscillograph microwave thin film circuit AFE(analog front end) technology as claimed in claim 1 is characterized in that said ceramic substrate is an aluminium oxide ceramic substrate.
3. the device of oscillograph microwave thin film circuit AFE(analog front end) technology as claimed in claim 1 is characterized in that said ceramic substrate is the aluminium nitride ceramics substrate.
4. the device of oscillograph microwave thin film circuit AFE(analog front end) technology as claimed in claim 1 is characterized in that said ceramic substrate is the beryllium oxide ceramics substrate.
5. the device of oscillograph microwave thin film circuit AFE(analog front end) technology as claimed in claim 1 is characterized in that said microwave capacitors device adopts the multi-layer ceramics burning techniques.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104102138A CN102495239A (en) | 2011-12-12 | 2011-12-12 | Device for simulating front-end technology by oscilloscope microwave thin film circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104102138A CN102495239A (en) | 2011-12-12 | 2011-12-12 | Device for simulating front-end technology by oscilloscope microwave thin film circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102495239A true CN102495239A (en) | 2012-06-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104102138A Pending CN102495239A (en) | 2011-12-12 | 2011-12-12 | Device for simulating front-end technology by oscilloscope microwave thin film circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN102495239A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548695A (en) * | 2014-11-03 | 2016-05-04 | 江苏绿扬电子仪器集团有限公司 | Realization system for microwave frequency channel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100275177A1 (en) * | 2006-11-24 | 2010-10-28 | Hynix Semiconductor Inc. | Method for transferring self-assembled dummy pattern to substrate |
| TW201119001A (en) * | 2009-11-09 | 2011-06-01 | Taiwan Semiconductor Mfg | Through-silicon via structure and a process for forming the same |
| CN102110673A (en) * | 2010-10-27 | 2011-06-29 | 中国科学院上海微系统与信息技术研究所 | Wafer level MMCM (microwave multichip module) packaging structure using photosensitive BCB (benzocyclobutene) as dielectric layer and method |
| CN101788578B (en) * | 2009-12-25 | 2012-07-04 | 北京普源精电科技有限公司 | Oscilloscope with front end analog circuit |
-
2011
- 2011-12-12 CN CN2011104102138A patent/CN102495239A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100275177A1 (en) * | 2006-11-24 | 2010-10-28 | Hynix Semiconductor Inc. | Method for transferring self-assembled dummy pattern to substrate |
| TW201119001A (en) * | 2009-11-09 | 2011-06-01 | Taiwan Semiconductor Mfg | Through-silicon via structure and a process for forming the same |
| CN101788578B (en) * | 2009-12-25 | 2012-07-04 | 北京普源精电科技有限公司 | Oscilloscope with front end analog circuit |
| CN102110673A (en) * | 2010-10-27 | 2011-06-29 | 中国科学院上海微系统与信息技术研究所 | Wafer level MMCM (microwave multichip module) packaging structure using photosensitive BCB (benzocyclobutene) as dielectric layer and method |
Non-Patent Citations (2)
| Title |
|---|
| 宋毅: "《国家产业技术政策研究报告》", 31 October 2003, 中国社会科学出版社 * |
| 陵国权等: "《电子信息研究 信息技术 2002》", 31 December 2002, 信息产业部科学技术司等 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548695A (en) * | 2014-11-03 | 2016-05-04 | 江苏绿扬电子仪器集团有限公司 | Realization system for microwave frequency channel |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120613 |