CN102426890B - Static suppressor and preparation method for static suppressor - Google Patents
Static suppressor and preparation method for static suppressor Download PDFInfo
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- CN102426890B CN102426890B CN 201110222104 CN201110222104A CN102426890B CN 102426890 B CN102426890 B CN 102426890B CN 201110222104 CN201110222104 CN 201110222104 CN 201110222104 A CN201110222104 A CN 201110222104A CN 102426890 B CN102426890 B CN 102426890B
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Abstract
The present invention provides an ultra low electrical capacitance static suppressor. The static suppressor comprises a ZnO substrate and electrodes. The electrodes are arranged on both ends of the ZnO substrate. The ZnO substrate is further provided with a Mg-Zn-Ti substrate, wherein the Mg-Zn-Ti substrate is prepared from MgO powder, ZnO powder and TiO2 powder, a molar ratio of the MgO powder to the ZnO powder to the TiO2 powder is 4:1:5. The present invention further provides a preparation method for the suppressor chip. The preparation method comprises: preparing pulp; casting membrane sheets; carrying out laminating; pressing green body; cutting chips; removing glue; carrying out sintering. According to the present invention, the ZnO substrate is further provided with the Mg-Zn-Ti substrate. In the prior art, the ZnO varistor substrate provides the electrostatic absorption function, and is difficultly adopted for the electrostatic protection in the circuit due to the large electrical capacitance. Therefore, the Mg-Zn-Ti substrate is added by the static suppressor of the present invention, such that the electrical capacitance of the component is reduced, and the purpose of the ultra low electrical capacitance is achieved so as to reduce the absorption influence on the circuit signal due to the component.
Description
[technical field]
The present invention relates to the electronic devices and components field, relate in particular to the ultra-low volume static suppressor, and the preparation method of this static suppressor.
[background technology]
In existing science and technology and in life, static has brought great impact to people, and is large to can inadvertently with the electronic device puncture of costliness, causing the loss of electronics industry year to reach the over ten billion dollar.In aerospace industry, static discharge causes rocket and satellite launch failure, disturbs the operation of aircraft.Therefore electrostatic defending seems particularly important in Contemporary Industrial Design.The static suppressor of existing market main flow is the type piezoresistor of anti-static type, its advantage is for being easy to surface mount, but because the characteristics that common piezo-resistance easily wears out, capacitance is higher, in the high circuit of rated voltage, cause strong heating, or cause high frequency (more than the 30kHz) signal transmission distortion.
[summary of the invention]
The technical problem to be solved in the present invention is, for the deficiencies in the prior art, provides a kind of ultra-low volume static suppressor, solves components and parts of the prior art and is easy to wear out, and easily causes the problem of high-frequency signal transmission distortion.
Another technical problem that will solve of the present invention is, a kind of preparation method of static suppressor is provided, and the method technique is simple, is easy to mass production.
In order to solve the problems of the technologies described above, the present invention by the following technical solutions:
The invention provides a kind of ultra-low volume static suppressor, comprise zno-based body and electrode, this electrode is arranged at the two ends of zno-based body, wherein: also be provided with the Mg-Zn-Ti matrix on the described zno-based body, 4: 1: 5 in molar ratio MgO of this Mg-Zn-Ti matrix, ZnO, TiO
2The powder proportioning forms.
The present invention further preferred version is: the Thickness Ratio of described Mg-Zn-Ti matrix and zno-based body was more than or equal to 1: 1.
The present invention further preferred version is: the Thickness Ratio of described Mg-Zn-Ti matrix and zno-based body was more than or equal to 4: 1.
The present invention also provides a kind of preparation method of static suppressor, and the method may further comprise the steps and makes:
(1) slurrying: ZnO, Mg-Zn-Ti powder configure respectively slurry, 4: 1: 5 in molar ratio MgO of this Mg-Zn-Ti powder, ZnO, TiO
2Powder carries out proportioning;
(2) curtain coating: the above-mentioned slurry for preparing is made the diaphragm that thickness is 20～40 μ m by casting machine;
(3) lamination: the lamination total thickness is 800 μ m～1200 μ m, and Mg-Zn-Ti compares more than or equal to 1: 1 with the Zn diaphragm thickness;
(4) pressed compact: with the briquet sealing of folding, at 40 ℃～60 ℃ medium static pressure 15min～30min of hot water;
(5) cutting: the diaphragm behind the above-mentioned static pressure is cut;
(6) binder removal, sintering: the diaphragm after the above-mentioned cutting is got rid of organic bond under 250 ℃～400 ℃ conditions, the chip that binder removal is finished is 800 ℃～1000 ℃ lower sintering 1h～3h in temperature, obtains the chip of static suppressor;
(7) annealing steps, with the chip behind the described sintering 400 ℃～600 ℃ annealing 30min;
(8) criticize silver and surface treatment, by the two ends at chip silver electrode is set, carry out again surface treatment and obtain described static suppressor.
The present invention further preferred version is: in above-mentioned (1) step, and MgO, ZnO, TiO
2Powder is that 800 ℃～1000 ℃ lower presintering obtain Mg in temperature after mixing
0.8Zn
0.2TiO
3Powder is again with the Al of Mg-Zn-Ti powder and pre-synthesis
2O
3-SiO
2-BiO
2Frit in mass ratio mixing in 96: 4 makes the Mg-Zn-Ti matrix.
Compared with prior art, the present invention is by the static suppressor of the ultra-low volume that provides, and by also be provided with the Mg-Zn-Ti matrix on the zno-based body, these two kinds of basis material sintering temperatures reach unanimity; Carry out again annealing in process behind the sintering, reduce by two alternate stress; Simultaneously, reality static absorption function be the ZnO varistor matrix, but because its capacitance is larger, be difficult to be applied to the electrostatic defending in the circuit, therefore the present invention adds the capacitance that the Mg-Zn-Ti matrix reduces element, realize that ultra-low volume is to reduce element to the inhalation effects of circuit signal.
Below in conjunction with specific embodiment invention is further detailed.
[embodiment]
The embodiment of the invention provides a kind of ultra-low volume static suppressor, comprise zno-based body and electrode, this electrode is arranged at the two ends of zno-based body, wherein: also be provided with the Mg-Zn-Ti matrix on the described zno-based body, 4: 1: 5 in molar ratio MgO of this Mg-Zn-Ti matrix, ZnO, TiO
2The powder proportioning forms.
The embodiment of the invention is 4: 1: 5 in molar ratio weighing MgO, ZnO, TiO
2Powder obtains Mg 900 ℃ of lower presintering after mixing
0.8Zn
0.2TIO
3Powder is again with the Al of this powder and pre-synthesis
2O
3-SiO
2-BiO
2Sintering obtained the Mg-Zn-Ti matrix, described Al after frit mixed in mass ratio at 96: 4
2O
3-SiO
2-BiO
2Frit will melt in sintering process and be liquid phase, promotes the Mg-Zn-Ti low temperature crystallization, Al behind the sintering
2O
3-SiO
2-BiO
2Be glassy phase, be distributed in around the Mg-Zn-Ti crystal grain.Reality static absorption function be the ZnO varistor matrix, but because its capacitance is larger, be difficult to be applied to the electrostatic defending in the circuit, therefore add the capacitance that the Mg-Zn-Ti matrix reduces element, realize that ultra-low volume is to reduce element to the inhalation effects of circuit signal.
The Thickness Ratio of the described Mg-Zn-Ti matrix of the embodiment of the invention and zno-based body was more than or equal to 1: 1., preferred version is: this Thickness Ratio Thickness Ratio was more than or equal to 4: 1.The chip capacity of different matrix Thickness Ratio is as shown in the table:
| The basis material type | Capacitance (pF) |
| ZnO | 1.97 |
| ZnO(1)∶Mg-Zn-Ti(1) | 1.13 |
| ZnO(1)∶Mg-Zn-Ti(2) | 0.75 |
| ZnO(1)∶Mg-Zn-Ti(3) | 0.51 |
| ZnO(1)∶Mg-Zn-Ti(4) | 0.38 |
| ZnO(1)∶Mg-Zn-Ti(6) | 0.30 |
| ZnO(1)∶Mg-Zn-Ti(8) | 0.26 |
As seen from the above table, account for the increase of chip gross thickness ratio with the Mg-Zn-Ti matrix, the capacitance of chip reduces gradually, but consider the Die strength factor, preferred version Mg-Z-Ti matrix is comparatively reasonable greater than 4: 1 with zno-based body thickness ratio, and further preferred version is: Mg-Z-Ti matrix and zno-based body thickness are 6: 1.
The embodiment of the invention also provides a kind of preparation method of ultra-low volume static suppressor, may further comprise the steps:
(1) slurrying: ZnO, Mg-Zn-Ti powder configure respectively slurry, the Mg-Zn-Ti powder is prepared burden by above-mentioned proportioning and is got final product, add respectively powder, organic solvent (absolute ethyl alcohol) in the ball grinder and carry out ball milling and disperse, then add adhesive and proceed the slurry that ball milling makes certain viscosity;
(2) curtain coating: the slurry for preparing is made the diaphragm that thickness is 20～40 μ m by casting machine;
(3) lamination: the lamination total thickness is 800 μ m～1200 μ m, and Mg-Zn-Ti compares more than or equal to 1: 1 with the Zn diaphragm thickness; The preferred 1000 μ m of this gross thickness, Mg-Zn-Ti and Zn diaphragm thickness were than preferred 6: 1;
(4) pressed compact: with the briquet sealing of folding, at 40 ℃～60 ℃ medium static pressure 15min～30min of hot water; Preferred version is at 50 ℃ of medium static pressure 20min of hot water;
(5) cutting: the diaphragm behind the above-mentioned static pressure is cut, and the length and width of cutting diaphragm are of a size of 08in * 05in, 06in * 03in or 04in * 02in;
(6) binder removal: chip is got rid of organic bond under 250 ℃～400 ℃ temperature conditions, and preferred temperature is 300 ℃;
(7) sintering: the chip that above-mentioned binder removal is finished obtains the chip of static suppressor at 800 ℃～1000 ℃ lower sintering 1h～3h, and preferred sintering temperature is 950 ℃ of lower sintering 2h, obtains the chip of static suppressor;
(8) annealing: again with said chip 400 ℃～600 ℃ annealing 30min, preferred 550 ℃, to eliminate the stress between two matrixes;
(9) chamfering: chip is re-used planetary mills, 150rpm chamfering 30min;
(10) criticize silver electrode: the sticking silver slurry at the chip two ends, and be sintered into electrode;
(11) surface treatment: electroplate one deck nickel at electrode surface and then electroplate one deck tin, make chip have good solderability.Obtain at last ultralow easy static suppressor.
In above-mentioned (1) step, MgO, ZnO, TiO
2Powder obtains Mg 800 ℃～1000 ℃ lower presintering after mixing
0.8Zn
0.2TiO
3Powder is again with the Al of Mg-Zn-Ti powder and pre-synthesis
2O
3-SiO
2-BiO
2Frit in mass ratio mixing in 96: 4 makes the Mg-Zn-Ti matrix; Preferred 900 ℃ of the temperature of presintering.
Above-described embodiment has only been expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, patent of the present invention and protection range should be as the criterion with claims.
Claims (5)
1. ultra-low volume static suppressor, comprise zno-based body and electrode, this electrode is arranged at the two ends of zno-based body, it is characterized in that: also be provided with the Mg-Zn-Ti matrix on the described zno-based body, this Mg-Zn-Ti matrix in molar ratio MgO, ZnO, the TiO2 powder proportioning of 4:1:5 forms.
2. ultra-low volume static suppressor according to claim 1, it is characterized in that: the Thickness Ratio of described Mg-Zn-Ti matrix and zno-based body is more than or equal to 1:1.
3. ultra-low volume static suppressor according to claim 1, it is characterized in that: the Thickness Ratio of described Mg-Zn-Ti matrix and zno-based body is more than or equal to 4:1.
4. the preparation method of the static suppressor of a claim 1 is characterized in that: comprise the following steps to make:
(1) slurrying: ZnO, Mg-Zn-Ti powder configure respectively slurry, and this Mg-Zn-Ti powder is MgO, ZnO, the TiO of 4:1:5 in molar ratio
2Powder carries out proportioning;
(2) curtain coating: the above-mentioned slurry for preparing is made the diaphragm that thickness is 20 ~ 40 μ m by casting machine;
(3) lamination: the lamination total thickness is 800 μ m～1200 μ m, and Mg-Zn-Ti and ZnO film sheet Thickness Ratio are more than or equal to 1:1;
(4) pressed compact: with the briquet sealing of folding, at 40 ℃～60 ℃ medium static pressure 15min～30min of hot water;
(5) cutting: the briquet behind the above-mentioned static pressure such as grade is cut;
(6) binder removal, sintering: the briquet after the above-mentioned cutting is got rid of organic bond under 250 ℃～400 ℃ conditions, the briquet that binder removal is finished obtains the chip of static suppressor at 800 ℃～1000 ℃ lower sintering 1h～3h;
(7) annealing steps, with the chip behind the described sintering 400 ℃～600 ℃ annealing 30min;
(8) criticize silver and surface treatment, by the two ends at chip silver electrode is set, carry out again surface treatment and obtain described static suppressor.
5. the preparation method of static suppressor according to claim 4 is characterized in that: in described (1) step, and MgO, ZnO, TiO
2Powder obtains Mg 800 ℃～1000 ℃ lower presintering after mixing
0.8Zn
0.2TiO
3Powder is again with the Al of Mg-Zn-Ti powder and pre-synthesis
2O
3-SiO
2-BiO
2Frit in mass ratio 96:4 mixing makes the Mg-Zn-Ti matrix.
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|---|---|---|---|
| CN 201110222104 CN102426890B (en) | 2011-08-04 | 2011-08-04 | Static suppressor and preparation method for static suppressor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110222104 CN102426890B (en) | 2011-08-04 | 2011-08-04 | Static suppressor and preparation method for static suppressor |
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| CN102426890A CN102426890A (en) | 2012-04-25 |
| CN102426890B true CN102426890B (en) | 2013-01-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4292901B2 (en) * | 2002-08-20 | 2009-07-08 | 株式会社村田製作所 | Barista |
| JP4432489B2 (en) * | 2003-12-25 | 2010-03-17 | パナソニック株式会社 | Manufacturing method of anti-static parts |
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Denomination of invention: The invention relates to an electrostatic suppressor and a preparation method thereof Effective date of registration: 20200817 Granted publication date: 20130123 Pledgee: Science City (Guangzhou) Finance Leasing Co.,Ltd. Pledgor: GUANGZHOU CHUANGTIAN ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: Y2020980005043 |
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