CN102254880B - Chip packaging device and manufacturing method thereof - Google Patents
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000012790 adhesive layer Substances 0.000 claims abstract description 42
- 230000017525 heat dissipation Effects 0.000 claims abstract description 31
- 238000003466 welding Methods 0.000 claims abstract description 7
- 239000000853 adhesive Substances 0.000 claims abstract description 5
- 230000001070 adhesive effect Effects 0.000 claims abstract description 5
- 239000008393 encapsulating agent Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 5
- 239000000084 colloidal system Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
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- 239000002313 adhesive film Substances 0.000 description 2
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- 238000003486 chemical etching Methods 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
技术领域 technical field
本发明关于一种芯片封装装置及其制造方法。The invention relates to a chip packaging device and a manufacturing method thereof.
背景技术 Background technique
一般而言,半导体封装指将一半导体晶粒以一封装体包覆,并在封装体外提供电接点,以连接外部装置或电路,而其中的球栅阵列构装技术(Ball gridarray(BGA)package technology)常用于构装高密度及高接脚数的半导体晶粒。在一传统的BGA封装中,半导体晶粒放置于电路基板上,半导体晶粒以导线引线搭接(wire bond)至电路基板,而封装体将半导体晶粒及导线包覆。锡球形成于电路基板的背面,以电性连接外部装置与半导体晶粒。Generally speaking, semiconductor packaging refers to covering a semiconductor chip with a package body, and providing electrical contacts outside the package body to connect external devices or circuits, and the Ball Grid Array (BGA) package technology (BGA) package technology) is often used to construct semiconductor dies with high density and high pin count. In a conventional BGA package, the semiconductor die is placed on the circuit substrate, the semiconductor die is bonded to the circuit substrate by wire bonds, and the package wraps the semiconductor die and the wires. Solder balls are formed on the backside of the circuit substrate to electrically connect external devices and semiconductor chips.
当半导体晶粒上的电路进行操作时,半导体晶粒会产生热。而在传统的BGA封装中,半导体晶粒为不易导热的封装体所包覆,故半导体晶粒产生的热不易发散。When the circuits on the semiconductor die operate, the semiconductor die generates heat. In the traditional BGA package, the semiconductor die is covered by a package body that is not easy to conduct heat, so the heat generated by the semiconductor die is not easy to dissipate.
另,有些BGA封装在封装体内部设置散热片,期以促进半导体晶粒的散热。然而,由于封装体导热能力差,而散热片又为封装体所包覆,从而使其整体散热效果改善有限。In addition, some BGA packages are equipped with heat sinks inside the package body, hoping to promote the heat dissipation of the semiconductor die. However, due to the poor thermal conductivity of the package, and the heat sink is covered by the package, the improvement of the overall heat dissipation effect is limited.
此外,美国专利第6,458,626号揭示一种封装结构,其将散热件表面外露,藉以提高散热效率。该封装结构以封装胶体完全包覆接口层/散热件及半导体芯片后,进行切割。切割完毕后,利用接口层将散热件上方的封装化合物移除,即可露出散热件。然而,此专利揭示的方法复杂,且在进行切割步骤时,因切割刀具需切割金属制的散热件,而易损耗切割刀具。再者,金属制的散热件不易切割平整,造成产品质量不佳。In addition, US Pat. No. 6,458,626 discloses a package structure, which exposes the surface of the heat sink to improve heat dissipation efficiency. In the packaging structure, after the interface layer/heat sink and the semiconductor chip are completely coated with the packaging colloid, cutting is performed. After cutting, use the interface layer to remove the encapsulation compound above the heat sink to expose the heat sink. However, the method disclosed in this patent is complicated, and the cutting tool is easy to wear out because the cutting tool needs to cut the metal heat sink during the cutting step. Furthermore, metal heat sinks are not easy to cut flat, resulting in poor product quality.
有鉴于前述现有半导体封装上散热的缺失,故需要一种新的半导体散热设计。In view of the lack of heat dissipation on the conventional semiconductor package, a new semiconductor heat dissipation design is required.
发明内容 Contents of the invention
本发明的一目的提供一种芯片封装装置及其制造方法。芯片封装装置包含一散热件,散热件可充分暴露于芯片封装装置的封装外,使芯片封装装置具良好的散热效率。而本发明揭示的一种芯片封装装置的制造方法可容易制造出将散热件外露的封装结构,无须于封装后切割散热件,故工艺简单、良率高。An object of the present invention is to provide a chip packaging device and a manufacturing method thereof. The chip packaging device includes a heat dissipation element, which can be fully exposed outside the package of the chip packaging device, so that the chip packaging device has good heat dissipation efficiency. However, the manufacturing method of a chip packaging device disclosed by the present invention can easily manufacture a packaging structure with exposed heat sinks, without cutting the heat sink after packaging, so the process is simple and the yield is high.
根据上述目的,本发明一实施例揭示一种芯片封装装置,其包含一载体、一芯片、至少一导线、一黏着层、一散热件及一封胶体。载体包括至少一芯片接合区及至少一电接点,其中该至少一电接点沿该至少一芯片接合区外周设置。芯片具有一主动面及一被动面。芯片包括至少一焊垫,其设置于主动面上。芯片以被动面面向载体,设置于该载体的该至少一芯片接合区上。至少一导线连接该至少一焊垫及该至少一电接点。黏着层覆盖芯片的主动面及包覆至少一导线中在相应的至少一焊垫上延伸的部分。散热件固定于黏着层上,且覆盖该芯片。封胶体部份密封该芯片、该黏着层与该散热件的周侧,并于该封胶体上形成一凹陷的开口,以曝露出该散热件表面。According to the above purpose, an embodiment of the present invention discloses a chip packaging device, which includes a carrier, a chip, at least one wire, an adhesive layer, a heat sink, and an encapsulant. The carrier includes at least one chip bonding area and at least one electrical contact, wherein the at least one electrical contact is arranged along the periphery of the at least one chip bonding area. The chip has an active surface and a passive surface. The chip includes at least one welding pad disposed on the active surface. The chip faces the carrier with the passive surface, and is arranged on the at least one chip bonding area of the carrier. At least one wire connects the at least one welding pad and the at least one electrical contact. The adhesive layer covers the active surface of the chip and covers the part extending on the corresponding at least one welding pad in the at least one wire. The heat sink is fixed on the adhesive layer and covers the chip. The encapsulant partially seals the chip, the adhesive layer and the peripheral side of the heat dissipation element, and forms a recessed opening on the encapsulant to expose the surface of the heat dissipation element.
本发明一实施例揭示一种芯片封装装置的制造方法,其包含下列步骤:提供一载体,其中该载体包含至少一芯片接合区及至少一电接点;提供至少一芯片,该芯片包括一主动面及一被动面,该芯片的主动面上形成有至少一焊垫,并以该芯片的被动面固定于该载体的该至少一芯片接合区上;以一导线连接该至少一焊垫及该至少一电接点;以一黏着层,覆盖该芯片的主动面,其中该黏着层包覆该至少一导线中在该至少一焊垫上延伸的部分;固定一散热组件于该黏着层上,其中该散热组件包含一散热件及一覆盖件,该散热件位于该芯片及该覆盖件之间;形成一封胶体,其沿该芯片、该黏着层与该散热组件的周侧密封设置,并于该封胶体的顶面曝露出该覆盖件;以及移除该覆盖件。An embodiment of the present invention discloses a method for manufacturing a chip packaging device, which includes the following steps: providing a carrier, wherein the carrier includes at least one chip bonding area and at least one electrical contact; providing at least one chip, the chip includes an active surface and a passive surface, at least one pad is formed on the active surface of the chip, and the passive surface of the chip is fixed on the at least one chip bonding area of the carrier; the at least one pad and the at least one pad are connected by a wire An electrical contact; an adhesive layer is used to cover the active surface of the chip, wherein the adhesive layer covers the at least one wire extending on the at least one pad; a heat dissipation component is fixed on the adhesive layer, wherein the heat dissipation The component includes a heat dissipation element and a cover element, the heat dissipation element is located between the chip and the cover element; an encapsulant is formed, which is sealed along the periphery of the chip, the adhesive layer and the heat dissipation component, and is placed on the sealing surface exposing the cover on the top surface of the colloid; and removing the cover.
上文已经概略地叙述本揭露的技术特征及优点,俾使下文的本揭露详细描述得以获得较佳了解。构成本揭露的申请专利范围标的的其它技术特征及优点将描述于下文。本揭露所属技术领域中具有通常知识者应可了解,下文揭示的概念与特定实施例可作为基础而相当轻易地予以修改或设计其它结构或工艺而实现与本揭露相同的目的。本揭露所属技术领域中具有通常知识者亦应可了解,这类等效的建构并无法脱离权利要求书所提出的本揭露的精神和范围。The technical features and advantages of the present disclosure have been briefly described above, so that the following detailed description of the present disclosure can be better understood. Other technical features and advantages constituting the subject matter of the claimed scope of the present disclosure will be described below. Those skilled in the art of the present disclosure should understand that the concepts and specific embodiments disclosed below can be used as a basis to easily modify or design other structures or processes to achieve the same purpose as the present disclosure. Those with ordinary knowledge in the technical field to which the disclosure belongs should understand that such equivalent constructions cannot depart from the spirit and scope of the disclosure as set forth in the claims.
附图说明 Description of drawings
图1显示本发明一实施例的一种芯片封装装置的截面示意图;FIG. 1 shows a schematic cross-sectional view of a chip packaging device according to an embodiment of the present invention;
图2至图6工艺流程示意图,其例示本发明一实施例的芯片封装装置的制造方法;2 to 6 are schematic process flow diagrams illustrating a method for manufacturing a chip packaging device according to an embodiment of the present invention;
图7至图9工艺流程示意图,其例示本发明一实施例的散热组件的制造方法;及7 to 9 are schematic process flow diagrams illustrating a method for manufacturing a heat dissipation component according to an embodiment of the present invention; and
图10显示本发明另一实施例的一种芯片封装装置的截面示意图。FIG. 10 shows a schematic cross-sectional view of a chip packaging device according to another embodiment of the present invention.
具体实施方式 Detailed ways
图1显示本发明一实施例的一种芯片封装装置1的截面示意图。参照图1所示,芯片封装装置1可包含一载体11、一芯片14、至少一导线16、一黏着层17、一散热件18及一封胶体19,其中芯片14设置于载体11上;黏着层17设置于芯片14上;散热件18设置于黏着层17上;导线16电性连接芯片14与载体11且部分为黏着层17所包覆;而封胶体19部份密封芯片14、黏着层17与散热件18堆栈结构的周侧区域,并暴露散热件18的表面24。FIG. 1 shows a schematic cross-sectional view of a chip packaging device 1 according to an embodiment of the present invention. 1, the chip packaging device 1 can include a
详言之,载体11可包括至少一芯片接合区25及至少一电接点12,其中该至少一电接点12设置于至少一芯片接合区25的周侧。在一实施例中,载体11包含数个电接点12,其中该些电接点12沿该至少一芯片接合区25的外周设置。载体11可为印刷电路板或为FR-4基板、FR-5基板、BT基板或其它类似载板者。Specifically, the
芯片14包含至少一焊垫15、一主动面26及一被动面27,其中至少一焊垫15设置于主动面26上。芯片14以其被动面27面向载体11的方式,利用黏胶13黏合于载体11的相应的至少一芯片接合区25上,其中黏胶13可包含环氧树脂(epoxy)、银胶或B阶(B-Stage)树脂。The
芯片14的至少一焊垫15与在载体11上相应的至少一电接点12以导线16连接。At least one
黏着层17覆盖芯片14的主动面26,并包覆着至少一导线16在相应的至少一焊垫15上延伸的部分。在一实施例中,该黏着层17包含薄膜覆盖焊线(FOW;Film Over Wire)胶材。The
散热件18固定于黏着层17上,并覆盖芯片14。在本实施例中,散热件18的表面积与芯片14的表面积相当。另,散热件18的材质可为金属(如铜)或硅。又,散热件18具有一固定于黏着层17的表面23及相对于表面23的另一表面24,其中表面23可较表面24为粗糙,以增加散热件18与黏着层17间的接着强度。The
封胶体19部份密封芯片14、黏着层17与散热件18的周侧。封胶体19上形成一凹陷的开口20,其中开口20暴露散热件18的整个表面24。The
载体11上可另形成数个锡球21,其中锡球21与芯片14相对设置。透过锡球21,芯片14得与芯片封装装置1外的装置或电路电性连接。
图2至图6工艺流程示意图,其例示本发明一实施例的芯片封装装置1的制造方法。参照图2所示,芯片封装装置1的制造方法首先提供一载体11。载体11包含至少一芯片接合区25及至少一电接点12,其中该至少一电接点12设置于至少一芯片接合区25的周侧区域。接着,提供至少一芯片14。芯片14包括至少一焊垫15、一主动面26及一被动面27,其中至少一焊垫15设置于主动面26上。然后,以芯片14的被动面27朝向载体11的方式,利用黏胶13,将芯片14固定于载体11上相应的至少一芯片接合区25。之后,利用至少一导线16,相应地连接芯片14上的焊垫15与载体11上的电接点12。2 to 6 are schematic process flow diagrams illustrating a manufacturing method of the chip packaging device 1 according to an embodiment of the present invention. Referring to FIG. 2 , the manufacturing method of the chip packaging device 1 firstly provides a
参照图3所示,将一黏着层17覆盖芯片14的主动面26,其中黏着层17至少包覆在相应的至少一焊垫15上所延伸的部分导线16。Referring to FIG. 3 , an
参照图4所示,将一散热组件28固定于黏着层17上,其中散热组件28包含一散热件18及一覆盖件30。在一实施例中,散热件18、黏着层17、覆盖件30与芯片14的大小可相当。Referring to FIG. 4 , a
参照图5所示,于芯片14、黏着层17与散热组件28的周侧形成一封胶体19,以密封芯片14、黏着层17与散热组件28的周侧,并于封胶体19的顶面暴露出覆盖件30。Referring to FIG. 5 , an
参照图6所示,经切割后,获得多数个独立且顶部为覆盖件30所覆盖的芯片封装装置1,最后再移除覆盖件30。覆盖件30为一可耐封胶体19成型时高温的胶膜。覆盖件30可为一热释放膜(thermal release film),而覆盖件30可以加热方式移除。此外,覆盖件30亦可为利用撕除方式移除的胶膜。Referring to FIG. 6 , after dicing, a plurality of independent chip packaging devices 1 covered by the
图7至图9工艺流程示意图,其例示本发明一实施例的散热组件28的制造方法。参照图7所示,散热组件28的制造方法首先提供一晶圆31。然后黏贴一覆盖片32于晶圆31的表面33上。7 to 9 are schematic process flow diagrams illustrating a manufacturing method of the
参照图8所示,将晶圆31薄化,以获得一薄化晶圆31′。然后,以化学蚀刻或离子蚀刻工艺,将晶圆31′的表面34粗化或在表面34上形成若干窝孔(dimple)。Referring to FIG. 8, the
参照图9所示,最后切割薄化晶圆31′与覆盖片32的组合,以获得数个散热组件28。Referring to FIG. 9 , the combination of the thinned
图10显示本发明另一实施例的一种芯片封装装置3的截面示意图。参照图10所示,芯片封装装置3可包含一载体11、一芯片14、至少一导线16、一黏着层17、一散热件38及一封胶体39。芯片14以其被动面27黏着于载体11上的芯片接合区25的方式固定,并以导线16相应地连接焊垫15与位于芯片接合区25周侧的电接点12。黏着层17覆盖芯片14的主动面26且包覆在相应的焊垫15上延伸的部分导线16。散热件38固定并覆盖于黏着层17上。封胶体39部份密封芯片14、黏着层17与散热件38堆栈结构的周侧区域,并暴露散热件18的表面40。在本实施例中,散热件38的表面积大于芯片14的表面积。散热件38的材质可为金属(如铜)或硅。又,散热件38具有一固定于黏着层17的表面41及相对于表面41的另一表面40,其中表面41可较表面40为粗糙,以增加散热件38与黏着层17间的接着强度。FIG. 10 shows a schematic cross-sectional view of a chip packaging device 3 according to another embodiment of the present invention. Referring to FIG. 10 , the chip packaging device 3 may include a
封胶体39部份密封芯片14、黏着层17与散热件38的周侧。封胶体39上形成一凹陷的开口20,其中开口20暴露散热件38的整个表面40。The
载体11上可另形成数个锡球21,其中锡球21与芯片14相对设置。透过锡球21,芯片14得与芯片封装装置3外的装置或电路电性连接。
综上,本发明揭示一种芯片封装装置,其包含一散热件。散热件可充分暴露于芯片封装装置的封装外,因此芯片封装装置具良好的散热效率。此外,芯片封装装置另包含一黏着层,黏着层包覆部分连接芯片与载体的导线。本发明另揭示一种芯片封装装置的制造方法,该方法利用覆盖件遮盖散热件,之后在芯片、黏着层、散热件与覆盖件的周侧形成一封胶体,如此可容易制造出将散热件外露的封装结构,而无须切割散热件。To sum up, the present invention discloses a chip packaging device, which includes a heat sink. The heat dissipation element can be fully exposed outside the package of the chip packaging device, so the chip packaging device has good heat dissipation efficiency. In addition, the chip packaging device further includes an adhesive layer, and the adhesive layer covers part of the wires connecting the chip and the carrier. The present invention also discloses a method for manufacturing a chip packaging device. In this method, a cover is used to cover the heat sink, and then a sealant is formed on the periphery of the chip, the adhesive layer, the heat sink, and the cover, so that the heat sink can be easily manufactured. Exposed package structure without cutting heat sink.
本揭露的技术内容及技术特点已揭示如上,然而熟悉本项技术的人士仍可能基于本揭露的教示及揭示而作种种不背离本揭露精神的替换及修饰。因此,本揭露的保护范围应不限于实施例所揭示者,而应包括各种不背离本揭露的替换及修饰,并为权利要求书所涵盖。The technical content and technical features of this disclosure have been disclosed above, but those who are familiar with this technology may still make various substitutions and modifications based on the teachings and disclosures of this disclosure without departing from the spirit of this disclosure. Therefore, the protection scope of the present disclosure should not be limited to those disclosed in the embodiments, but should include various replacements and modifications that do not deviate from the present disclosure, and are covered by the claims.
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