CN102148288A - Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method - Google Patents
Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method Download PDFInfo
- Publication number
- CN102148288A CN102148288A CN2011100290570A CN201110029057A CN102148288A CN 102148288 A CN102148288 A CN 102148288A CN 2011100290570 A CN2011100290570 A CN 2011100290570A CN 201110029057 A CN201110029057 A CN 201110029057A CN 102148288 A CN102148288 A CN 102148288A
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- CN
- China
- Prior art keywords
- battery plate
- layer
- silicon solar
- aluminum
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 45
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 3
- 239000004411 aluminium Substances 0.000 claims description 32
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a process for preparing a backside passivation layer of a monocrystal silicon solar battery plate by a laser rapid heating method. The process comprises the following steps of: generating a barrier layer on an illuminated face of the battery plate by plasma enhanced chemical vapor deposition (PECVD), and then printing a layer of aluminum paste on a backlight surface of the battery plate; roasting the battery plate printed with the aluminum paste, and removing a dissolvent in the aluminum paste; and finally, performing laser irradiation on the aluminum paste to ensure that aluminum is molten rapidly and diffused into a battery plate matrix, and forming a P+ layer. In the process, the aluminum paste is heated by laser, and then the aluminum is completely diffused into the battery plate matrix under the action of the laser, so that the battery plate is prevented from being warped after the traditional aluminum back surface field is sintered; at the same time, the doped concentration is higher than the concentration of the traditional aluminum back surface field, and a formed emitter has the effect better than that of the traditional aluminum back surface field; and after the process is adopted, the average conversion efficiency of industrial production of the battery plate is more than 18.7 percent.
Description
Technical field
The present invention relates to the preparation technology of monocrystaline silicon solar cell sheet, especially a kind of monocrystalline silicon battery sheet backside passivation layer manufacture craft, specifically a kind of technology that adopts the laser rapid heating legal system to be equipped with monocrystaline silicon solar cell sheet backside passivation layer.
Background technology
Surface passivation is to improve monocrystaline silicon solar cell conversion efficiency method commonly used, its objective is the surface lifetime that will improve minority carrier; Because the thickness of battery sheet is more and more littler, the life-span decisive role of the few charge carrier of logarithm surface lifetime, surface passivation has become indispensable operation in the modern monocrystalline silicon battery sheet production process; Surface passivation can be divided into front surface passivation and passivating back.
The action principle of surface passivation has two kinds: the one, come by the atom in the coating between the suspension on saturated battery sheet surface, and the tangible silicon chip surface of the typical implementation method of this principle forms silicon dioxide layer; Another is to form the P+ layer on the surface of battery sheet, and this layer and battery sheet matrix form an emitter and stop minority carrier to the surperficial drift of battery sheet, thereby prolong minority carrier lifetime, and the typical implementation method of this method is to form aluminium back of the body field.
In the production process of monocrystaline silicon solar cell sheet, to shorten the time of pyroprocess as far as possible, to reduce damage to the battery sheet matrix, and no matter traditional technology is to adopt the oxidation passivation or adopt the passivation of the aluminium back of the body, all will be through long pyroprocess, as the patent No. is the passivation layer preparation method who mentions in the patent of CN101425549A, and the battery sheet need keep half an hour nearly under 840 ~ 900 ℃ high temperature.
In addition, the aluminium of a current employing back of the body passivation technology can form layer of metal aluminium at the back side of battery sheet, because the thermal coefficient of expansion of aluminium and silicon differs bigger, can cause electrician pond sheet warpage after cooling, causes very big trouble for the encapsulation of battery sheet; This phenomenon along with battery sheet thickness reduce become more and more obvious.
Summary of the invention
The objective of the invention is at will be in the current aluminium back of the body technology manufacturing process and the serious problem of battery sheet warpage after completing, a kind of method of using LASER HEATING to prepare the aluminium back of the body is provided through long pyroprocess.
Technical scheme of the present invention is:
A kind of technology that adopts the laser rapid heating legal system to be equipped with monocrystaline silicon solar cell sheet backside passivation layer, it may further comprise the steps:
(a), after the sensitive surface growth barrier layer of using plasma enhanced chemical vapor deposition method PECVD at the battery sheet, printing one deck aluminium paste on cell back light face;
(b), the battery sheet that will be printed with aluminium paste toasts solvent in the removal aluminium paste;
(c), with laser radiation heating, aluminium paste layer melted fast and diffuse in the battery sheet matrix, form the P+ layer.
Among the present invention, the thickness of the aluminium paste layer that prints on cell back light face is 0.5 ~ 2mm.
Among the present invention, the battery sheet that is printed with aluminium paste layer is put into oven toast, stoving time is 5 ~ 10 minutes, and baking temperature is at 180 ~ 220 ℃.
Among the present invention, heat aluminium paste, make its temperature in 20 ~ 40 seconds, rise to 1100 ~ 1200 ℃, and under this temperature, kept 50 ~ 80 seconds, make the aluminium atom diffusion to the battery sheet matrix with laser radiation.
Beneficial effect of the present invention:
The present invention utilizes laser rapid heating, has shortened the pyroprocess of battery sheet greatly; The technological advantage of this patent also is, the aluminium paste amount of printing seldom to the battery sheet matrix, can not occur the phenomenon of battery sheet warpage behind the traditional aluminium back of the body sintering in perfect diffusion under the effect of laser.
In the technical process of the present invention, though the aluminium amount of printing seldom, but owing to aluminium under the effect of laser all diffuses in the battery sheet matrix, the aluminium back of the body field that the concentration of doping is more traditional on the contrary is higher, so this passivation layer is also effective than traditional aluminium back of the body field with the emitter that the silicon wafer-based body forms; After adopting this patent technology, the average conversion efficiency of the suitability for industrialized production of battery sheet reaches more than 18.7%.
Embodiment
The present invention is further illustrated below in conjunction with embodiment.
The processing step of this patent is:
(a) printing one deck aluminium paste on the cell back light face after PECVD finishes, the thickness of aluminium paste is 0.5 ~ 2mm;
(b) toasted 5 ~ 10 minutes down at 180 ~ 220 ℃, remove solvent and auxiliary material in the aluminium paste; The temperature of baking is 180 ~ 220 ℃, and stoving time is 5 ~ 10 minutes;
(c) heat aluminium paste with laser radiation, make its temperature in 20 ~ 40 seconds, rise to 1100 ~ 1200 ℃, and under this temperature, kept 50 ~ 80 seconds, make the aluminium atom diffusion aluminium be melted fast to the battery sheet matrix and diffuse in the battery sheet matrix, form the P+ layer.
The part that the present invention does not relate to prior art that maybe can adopt all same as the prior art is realized.
Claims (4)
1. technology that adopts the laser rapid heating legal system to be equipped with monocrystaline silicon solar cell sheet backside passivation layer is characterized in that it may further comprise the steps:
(a), after the sensitive surface growth barrier layer of using plasma enhanced chemical vapor deposition method PECVD at the battery sheet, printing one deck aluminium paste on cell back light face;
(b), the battery sheet that will be printed with aluminium paste toasts solvent in the removal aluminium paste;
(c), with laser radiation heating, aluminium paste layer melted fast and diffuse in the battery sheet matrix, form the P+ layer.
2. employing laser rapid heating legal system according to claim 1 is equipped with the technology of monocrystaline silicon solar cell sheet backside passivation layer, and the thickness that it is characterized in that the described aluminium paste layer that prints on cell back light face is 0.5 ~ 2mm.
3. employing laser rapid heating legal system according to claim 1 is equipped with the technology of monocrystaline silicon solar cell sheet backside passivation layer, the battery sheet that it is characterized in that being printed with aluminium paste layer is put into oven and is toasted, stoving time is 5 ~ 10 minutes, and baking temperature is at 180 ~ 220 ℃.
4. employing laser rapid heating legal system according to claim 1 is equipped with the technology of monocrystaline silicon solar cell sheet backside passivation layer, it is characterized in that describedly heating aluminium paste with laser radiation, make its temperature in 20 ~ 40 seconds, rise to 1100 ~ 1200 ℃, and under this temperature, kept 50 ~ 80 seconds, make the aluminium atom diffusion to the battery sheet matrix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100290570A CN102148288A (en) | 2011-01-27 | 2011-01-27 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100290570A CN102148288A (en) | 2011-01-27 | 2011-01-27 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102148288A true CN102148288A (en) | 2011-08-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100290570A Pending CN102148288A (en) | 2011-01-27 | 2011-01-27 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102148288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393095A (en) * | 2014-09-25 | 2015-03-04 | 魏一 | N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060207651A1 (en) * | 2003-05-07 | 2006-09-21 | Niels Posthuma | Germanium solar cell and method for the production thereof |
| CN101425549A (en) * | 2008-10-13 | 2009-05-06 | 浙江弘晨光伏能源有限公司 | Crystalline silicon solar cell inactivating and emitter (PN junction) producing technique |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| CN101540349A (en) * | 2009-04-27 | 2009-09-23 | 中山大学 | Aluminized BSF secondary sintering technology for crystal silicon solar cell |
| JP2009238824A (en) * | 2008-03-26 | 2009-10-15 | Tokyo Ohka Kogyo Co Ltd | Manufacturing method of electrode for semiconductor, and solar cell using the same |
| CN101710596A (en) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | Silicon solar battery |
| CN101814540A (en) * | 2010-04-07 | 2010-08-25 | 江苏华创光电科技有限公司 | Schottky junction single-sided electrode crystalline silicon solar cell and preparation method thereof |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
-
2011
- 2011-01-27 CN CN2011100290570A patent/CN102148288A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060207651A1 (en) * | 2003-05-07 | 2006-09-21 | Niels Posthuma | Germanium solar cell and method for the production thereof |
| JP2009238824A (en) * | 2008-03-26 | 2009-10-15 | Tokyo Ohka Kogyo Co Ltd | Manufacturing method of electrode for semiconductor, and solar cell using the same |
| CN101425549A (en) * | 2008-10-13 | 2009-05-06 | 浙江弘晨光伏能源有限公司 | Crystalline silicon solar cell inactivating and emitter (PN junction) producing technique |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| CN101540349A (en) * | 2009-04-27 | 2009-09-23 | 中山大学 | Aluminized BSF secondary sintering technology for crystal silicon solar cell |
| CN101710596A (en) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | Silicon solar battery |
| CN101814540A (en) * | 2010-04-07 | 2010-08-25 | 江苏华创光电科技有限公司 | Schottky junction single-sided electrode crystalline silicon solar cell and preparation method thereof |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393095A (en) * | 2014-09-25 | 2015-03-04 | 魏一 | N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus |
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Application publication date: 20110810 |