CN102109776A - Process for developing photoresist, and device thereof - Google Patents
Process for developing photoresist, and device thereof Download PDFInfo
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- CN102109776A CN102109776A CN 201110066931 CN201110066931A CN102109776A CN 102109776 A CN102109776 A CN 102109776A CN 201110066931 CN201110066931 CN 201110066931 CN 201110066931 A CN201110066931 A CN 201110066931A CN 102109776 A CN102109776 A CN 102109776A
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Abstract
The invention relates to a novel development method in a photoetching technology and a device thereof, and belongs to the field of micro-electronics, and micro electro mechanical system manufacturing. The invention aims to provide a process for developing photoresist, in particular the process which can ensure that the photoresist can be developed more completely and uniformly and the device for implementing the devolvement process. The process for developing the photoresist comprises the following steps of: spaying and wetting the workpiece surface on which the photoresist subjected to exposure is coated by using pure water; spraying developing solution instead of the pure water; performing development; spraying the pure water to clean; spraying CO2 ionization water to clean; rotating a workpiece to dry; and drying. The process has the advantages that: during development, the on-line proportioning of the mixed concentration of the developing solution and the pure water is realized and the mixed concentration is changed continuously, and the good development effect can be achieved.
Description
Technical field
The present invention relates to the new method and the device thereof of developing process in a kind of photoetching process technology, belong to microelectronics and MEMS (micro electro mechanical system) and make manufacture field.
Background technology
Photoresist (Photo Resist) is a kind of organic compound, and after it was subjected to ultraviolet photoetching, the solubleness in developer solution can change.In developing process, positive photoresist exposed to the sun the zone dissolving of light must be faster.Ideally, unexposed zone remains unchanged.Negative photoresist is just in time opposite, and unexposed zone will be dissolved in developer, and exposed areas is retained.Two main performances of photoresist are sensitivity and resolving power.General photoresist is coated on the silicon chip surface with liquid state, and it is solid-state that postexposure bake becomes.The exposure of photoresist depends on the kind and the thickness of photoresist, and the effect of exposure depends on the performance and the setting of Exposure mode and exposure machine.
The developer solution of making a comment or criticism property of developer solution photoresist.The developer solution of positive photoresist belongs to alkaline aqueous solution.Compound K OH and NaOH generally need not in IC makes because can bring mobile ion to pollute (MIC, Movable Ion Contamination).Prevailing developer for positive photoresist composition is Tetramethylammonium hydroxide (TMAH, Tetramethyl ammonium hydroxide), molecular formula is (CH3) 4NOH, for colourless crystallization (often contains 3,5 water of crystallization such as grade), the moisture absorption very easily, absorbing carbon dioxide rapidly in air is decomposed into methyl alcohol and trimethylamine in the time of 130 ℃.Can generate carboxylic acid in I line resist exposure, the alkali in the TMAH developer solution makes the photoresist of exposure be dissolved in developer solution with the acid neutralization, and the not influence of unexposed photoresist.Utilize this attribute of photoresist, can on silicon chip or circuit board, depict the wiring diagram that needs.
Summary of the invention
The purpose of this invention is to provide a kind of photoresist developing technology, further purpose is to provide a kind of comparatively thorough, technology, and the device of realizing developing process uniformly of photoresist developing that can make.
The present invention is that the technical scheme that achieves the above object is:
A kind of photoresist developing technology comprises the steps:
1) surface of the work that is coated with the photoresist that exposed sprays moistening with pure water;
2) the spray pure water converts the spray developer solution to;
3) develop;
4) the spray pure water cleans;
5) spray CO2 ionized water is cleaned;
6) Workpiece Rotating dries, and carries out drying.
Above-mentioned steps 2) pure water carries out the transition to developer solution gradually in, the potpourri of spray pure water and developer solution, and the content of developer solution is changed continuously by 0 beginning in the potpourri, is increased to 100% gradually.
Above-mentioned steps 4) developer solution carries out the transition to pure water gradually in, the potpourri of spray developer solution and pure water, and the content of pure water is changed continuously by 0 beginning in the potpourri, is increased to 100% gradually.
Above-mentioned spray adopts two nozzles, and surface of the work covers the mask of rotation.
A kind of device that adopts above-mentioned photoresist developing technology, have first and second electronic pressure regulating valve, first and second pressure servo valve, first and second flowmeter and T-valve, above-mentioned first and second electronic pressure regulating valve is controlled by source of the gas, be communicated with first and second pressure servo valve respectively, above-mentioned first pressure servo valve, first flow meter are connected in turn on pure water (DIW) pipeline, second pressure servo valve, second flowmeter are connected in turn on the developer solution pipeline, and pure water mixes by T-valve with developer solution.
Benefit of the present invention is in developing process, the melting concn of developer solution and pure water is realized online proportioning, change continuously, developer solution is alkaline, pH＞12, and pure water pH value is 7, the transition gradually of developer solution and pure water, can prevent from the optical cement moment combination of dissolving from can not cause generation of defects, can reach good development effect; Secondly, when surface of the work is sprayed with nozzle, be provided with the mask of rotation, can be so that liquid be distributed on the photoresist more uniformly.
Description of drawings
Below in conjunction with accompanying drawing embodiments of the invention are described in further detail.
Fig. 1 is apparatus of the present invention pipeline synoptic diagram.
Fig. 2 is nozzle and mask synoptic diagram.
Embodiment
Photoresist developing technology has following steps:
1) surface of the work that is coated with the photoresist that exposed sprays moistening with pure water;
2) the spray pure water converts the spray developer solution to, and this is converted to continuous change procedure, and promptly developer solution content increases up to 100% gradually from 0;
3) spray developer solution continuously, carry out development operation, according to the thickness setting time length of photoresist on institute's processing work;
4) the spray pure water cleans, and this conversion is similarly continuous change procedure, and promptly pure water content increases up to 100% gradually from 0, and there is a small amount of reflection of developing in this transient process, and can obtain better development effect;
5) spray CO2 ionized water is cleaned;
6) Workpiece Rotating dries, and carries out drying.
See Fig. 1, for adopting the device of developing process of the present invention, has the first electronic pressure regulating valve 1, the second electronic pressure regulating valve 5, first pressure servo valve 2, second pressure servo valve 6, first flow meter 3, second flowmeter 7 and T-valve 4, above-mentioned first, two electronic pressure regulating valves are controlled by source of the gas, respectively with first, two pressure servo valves are communicated with, above-mentioned first pressure servo valve, the first flow meter is connected in turn on pure water (DIW) pipeline, second pressure servo valve, second flowmeter is connected in turn on the developer solution pipeline, pure water mixes by T-valve with developer solution, through the mixed pure water of T-valve, the developer solution mixing material sprays surface of the work through nozzle.
See Fig. 2, for better development effect, apparatus of the present invention have two nozzles 8, and workpiece to be processed surface coverage mask 9, mask rotates with certain rotating speed, rotating speed is generally 100～500rpm more slowly, and nozzle spray flux and rotational speed can be regulated, and matches each other to obtain optical cement dissolution rate and homogeneity preferably.
Obviously, above-mentioned embodiment of the present invention only is for example of the present invention clearly is described, and is not to be qualification to embodiment of the present invention.For those of ordinary skill in the field, can also be easy to make other pro forma variation on the basis of the above description or substitute, and these changes or substitute also will be included within the protection domain that the present invention determines.
Claims (5)
1. a photoresist developing technology comprises the steps:
1) surface of the work that is coated with the photoresist that exposed sprays moistening with pure water;
2) the spray pure water converts the spray developer solution to;
3) develop;
4) the spray pure water cleans;
5) spray CO2 ionized water is cleaned;
6) Workpiece Rotating dries, and carries out drying.
2. photoresist developing technology according to claim 1, it is characterized in that: pure water carries out the transition to developer solution gradually above-mentioned steps 2), the potpourri of spray pure water and developer solution, and the content of developer solution is changed continuously by 0 beginning in the potpourri, is increased to 100% gradually.
3. photoresist developing technology according to claim 1 is characterized in that: developer solution carries out the transition to pure water gradually above-mentioned steps 4), the potpourri of spray developer solution and pure water, and the content of pure water is changed continuously by 0 beginning in the potpourri, is increased to 100% gradually.
4. photoresist developing technology according to claim 1 is characterized in that: above-mentioned spray adopts two nozzles (8), and surface of the work covers the mask (9) of rotation.
5. device that adopts the described photoresist developing technology of claim 1, have first and second electronic pressure regulating valve (1,5), first and second pressure servo valve (2,6), first and second flowmeter (3,7) and T-valve (4), above-mentioned first and second electronic pressure regulating valve is controlled by source of the gas (CDA), be communicated with first and second pressure servo valve respectively, above-mentioned first pressure servo valve, first flow meter are connected in turn on pure water (DIW) pipeline, second pressure servo valve, second flowmeter are connected in turn on the developer solution pipeline, and pure water mixes by T-valve with developer solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110066931 CN102109776A (en) | 2011-03-18 | 2011-03-18 | Process for developing photoresist, and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110066931 CN102109776A (en) | 2011-03-18 | 2011-03-18 | Process for developing photoresist, and device thereof |
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| Publication Number | Publication Date |
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| CN102109776A true CN102109776A (en) | 2011-06-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN 201110066931 Pending CN102109776A (en) | 2011-03-18 | 2011-03-18 | Process for developing photoresist, and device thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104102096A (en) * | 2014-06-05 | 2014-10-15 | 京东方科技集团股份有限公司 | Developing solution supply system, developing solution supply method and developing equipment |
| CN104570626A (en) * | 2013-10-28 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for improving uniformity of critical sizes and defect rate of pinholes |
| CN107300838A (en) * | 2017-08-08 | 2017-10-27 | 武汉华星光电技术有限公司 | Developer solution dilution system |
| CN109375481A (en) * | 2018-12-29 | 2019-02-22 | 上海彩丞新材料科技有限公司 | A kind of novel photoresist developing device and developing method |
| CN114815527A (en) * | 2021-12-16 | 2022-07-29 | 清华大学 | A development method, device, system and storage medium of a photoresist mask |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1407410A (en) * | 2001-08-28 | 2003-04-02 | 东京威力科创股份有限公司 | Development treating method and developing liquid coating device |
| JP2005210059A (en) * | 2003-12-26 | 2005-08-04 | Tokyo Electron Ltd | Development device and development processing method |
| CN1696834A (en) * | 2004-05-10 | 2005-11-16 | 台湾积体电路制造股份有限公司 | Developing method of photoresist layer |
| JP2005332882A (en) * | 2004-05-18 | 2005-12-02 | Tokyo Electron Ltd | Developing apparatus and developing method |
| CN1743963A (en) * | 2001-08-28 | 2006-03-08 | 东京威力科创股份有限公司 | Method for developing processing and apparatus for supplying developing solution |
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2011
- 2011-03-18 CN CN 201110066931 patent/CN102109776A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1407410A (en) * | 2001-08-28 | 2003-04-02 | 东京威力科创股份有限公司 | Development treating method and developing liquid coating device |
| CN1743963A (en) * | 2001-08-28 | 2006-03-08 | 东京威力科创股份有限公司 | Method for developing processing and apparatus for supplying developing solution |
| JP2005210059A (en) * | 2003-12-26 | 2005-08-04 | Tokyo Electron Ltd | Development device and development processing method |
| EP1708252A1 (en) * | 2003-12-26 | 2006-10-04 | Tokyo Electron Ltd. | Development device and development method |
| CN1696834A (en) * | 2004-05-10 | 2005-11-16 | 台湾积体电路制造股份有限公司 | Developing method of photoresist layer |
| JP2005332882A (en) * | 2004-05-18 | 2005-12-02 | Tokyo Electron Ltd | Developing apparatus and developing method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104570626A (en) * | 2013-10-28 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for improving uniformity of critical sizes and defect rate of pinholes |
| CN104102096A (en) * | 2014-06-05 | 2014-10-15 | 京东方科技集团股份有限公司 | Developing solution supply system, developing solution supply method and developing equipment |
| CN107300838A (en) * | 2017-08-08 | 2017-10-27 | 武汉华星光电技术有限公司 | Developer solution dilution system |
| CN109375481A (en) * | 2018-12-29 | 2019-02-22 | 上海彩丞新材料科技有限公司 | A kind of novel photoresist developing device and developing method |
| CN114815527A (en) * | 2021-12-16 | 2022-07-29 | 清华大学 | A development method, device, system and storage medium of a photoresist mask |
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Application publication date: 20110629 |