CN101691282A - Low radiation glass - Google Patents
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- CN101691282A CN101691282A CN200910235379A CN200910235379A CN101691282A CN 101691282 A CN101691282 A CN 101691282A CN 200910235379 A CN200910235379 A CN 200910235379A CN 200910235379 A CN200910235379 A CN 200910235379A CN 101691282 A CN101691282 A CN 101691282A
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Abstract
The invention provides low radiation glass, and belongs to the technical field of energy saving. The low radiation glass has a single silver layer structure. The low radiation glass adopts only one dielectric layer; in a basic structure, the low radiation glass comprises a glass substrate 10, a silver layer 11 and the dielectric layer 12 from bottom up orderly; and the dielectric layer consists of 1 to 5 sublayers, and each sublayer consists of a silicon film, a silicon-oxygen film, a silicon-nitrogen film or a silicon-oxygen-nitrogen film. The low radiation glass has stable performance and high reliability; and the production efficiency is high to greatly reduce cost and contribute to large-scale promotion and application.
Description
Technical field
The present invention relates to novel low emissivity glass, is the single-dielectric-layer low emissivity glass of medium layer with silicon, silica, silicon nitrogen or silica nitrogen particularly, belongs to glass manufacturing and field of energy-saving technology.
Background technology
Low emissivity glass is a kind ofly can see through most of visible light, reflects most of near infrared ray, and has the glass of very low far infrared radiation coefficient, and energy-saving effect is very obvious.Developed country in the world, most of building all adopts this low emissivity glass.In China, the application of low emissivity glass is also very not extensive, and major cause is the cost problem.Because price is more much higher than common white glass, therefore can only be used for top-grade building, seldom adopt the residential houses.
Off-line coated low-emissivity glass mainly is made of silver layer and protective dielectric layer, and medium layer also plays the effect that reduces luminous reflectance simultaneously.The medium layer of current extensive employing comprises zinc oxide, stannic oxide and titanium oxide, titanium oxide specific refractory power height, and good in optical property, the color adjustment is easy.The common drawback of above-mentioned three kinds of dielectric films is to see through oxygen and steam, causes the silver layer oxidation, and performance reduces, even loses efficacy.Another shortcoming of titanium oxide medium layer is that sputter rate is lower, and production cost is higher relatively.
Existing low emissivity glass needs within a short period of time and seals into hollow structure, otherwise performance will reduce significantly, and this just causes the strange land processing difficulties, has limited scale operation.Even seal into hollow, because the weak cell breath of soft seal, sealing materials, oxygen still can slowly enter wherein, cause the low emissivity glass degradation, even variable color comes off.Though developed can the strange land off-line coated low-emissivity glass of processing, need thicker silicon nitride protective membrane, poor-performing, the production cost height has limited its application.
Because the variety of issue that off-line coated low-emissivity glass exists makes it can only be used for high-grade office building in China, also be difficult to large-scale promotion.
Summary of the invention
The present invention is directed to the off-line low emissivity glass exists in the prior art deficiency and shortcoming, a kind of low emissivity glass is provided, make it not only have common, the stable performance of material, characteristics such as not oxidation fully, and solved the high problem of existing procucts production cost, can promote the large-scale application of low radiation energy-saving glass.
Technical scheme of the present invention is as follows:
Low emissivity glass has single silver coating structure, it is characterized in that: this low emissivity glass only adopts a medium layer, in its basic structure, from bottom to top comprises substrate of glass 10, silver layer 11, medium layer 12 successively; Described medium layer is made of 1 to 5 sublayer, and the sublayer is made of silicon film, silicon oxide thin film, silicon nitrogen film or silica nitrogen film.
The silicon oxide thin film of sublayer can be the uniform silica membrane of component in the described formation medium layer; The silicon oxide thin film that constitutes the medium layer sublayer also can be the silicon oxide thin film of the atom number of oxygen and silicon than the content gradually variational that gradually changes, central plane with this sublayer is a symmetrical plane, silicon components and specific refractory power are symmetrically distributed in the both sides up and down of this central plane, silicon components and the highest part of specific refractory power are positioned at the central plane of this sublayer, and the part that silicon components and specific refractory power are minimum is positioned at outermost two planes, this sublayer.
The silicon nitrogen film of sublayer can be the uniform silicon nitride film of component in the described formation medium layer; The silicon nitrogen film that constitutes the medium layer sublayer also can be the silicon nitrogen film of the atom number of nitrogen and silicon than the content gradually variational that gradually changes, central plane with this sublayer is a symmetrical plane, silicon components and specific refractory power are symmetrically distributed in the both sides up and down of this central plane, silicon components and the highest part of specific refractory power are positioned at the central plane of this sublayer, and the part that silicon components and specific refractory power are minimum is positioned at outermost two planes, this sublayer.
The silica nitrogen film of described formation medium layer sublayer is the silicon oxide thin film of the atom number of oxygen, nitrogen and silicon than the content gradually variational that gradually changes, central plane with this sublayer is a symmetrical plane, silicon components and specific refractory power are symmetrically distributed in the both sides up and down of this central plane, silicon components and the highest part of specific refractory power are positioned at the central plane of this sublayer, and the part that silicon components and specific refractory power are minimum is positioned at outermost two planes, this sublayer.
If comprise the sublayer that silicon film constitutes in the described medium layer, then this sublayer and silver layer are adjacent.
Strengthen layer increasing sticking power between glass and the silver layer and between silver layer and the medium layer, this layer adopts a kind of in the metal or alloy films such as aluminium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, nickel, stainless steel, and its thickness is less than 3 nanometers.
Increasing sticking power reinforcement layer between glass and the silver layer and between silver layer and the medium layer, this layer adopts a kind of in the films such as aluminium nitride, titanium nitride, zirconium nitride, hafnium nitride, vanadium nitride, niobium nitride, tantalum nitride, titanium oxide, zirconium white, hafnia, vanadium oxide, niobium oxides, tantalum oxide, zinc oxide, stannic oxide, Indium sesquioxide, tin indium oxide, and it is thick in 10 nanometers.
It is in order to adapt to the needs of scale of mass production that medium layer adopts content gradually variational film, except pure silicon, silicon-dioxide and silicon nitride, the silica of other ratio of component, silicon nitrogen and silica nitrogen film are that impossible to reach component equally distributed in the serialization magnetron sputtering plating.
The present invention compared with prior art, have the following advantages and the high-lighting effect: films such as the silicon that adopts in the low emissivity glass provided by the present invention, silica, silicon nitrogen, silica nitrogen, its specific refractory power can be adjusted arbitrarily between 1.5 to 4, has increased the handiness of structure design greatly; These film densifications can stop seeing through of oxygen or steam, have improved the stability of low emissivity glass greatly; The film deposition rate height can be boosted productivity greatly simultaneously, reduces cost.
Compare with existing low emissivity glass, stability improves greatly, can deposit in the air midium or long term.Owing to do not have problem of oxidation, seal into hollow structure after, be not afraid of weak respiration, even oxygen enters in the double glazing, performance can not reduce yet, and more the film break-off can not occur.These are for producing in enormous quantities and widespread use provides good precondition.The present invention has overcome the shortcoming of existing all kinds of low emissivity glasses fully, and the application of low emissivity glass is promoted greatly, and good pushing effect is played in the development of building energy conservation.
Description of drawings
Fig. 1 is the silver-colored film low emissivity glass of a list provided by the invention structural representation.This low emissivity glass comprises substrate of glass 10, silver layer 11, medium layer 12 successively.
Fig. 2 is the silver-colored film low emissivity glass of the list structural representation with sticking power reinforcement layer provided by the invention.This low emissivity glass comprises substrate of glass 10, sticking power reinforcement layer 13, silver layer 11, sticking power reinforcement layer 14, medium layer 12 successively.
Fig. 3 is silicon components and index distribution synoptic diagram, wherein N in the medium layer
1The highest silicon components of representative and the highest position of specific refractory power, N
2The highest silicon components of representative and the minimum position of specific refractory power.
Embodiment
Below by several specific embodiments concrete enforcement of the present invention is described.
Embodiment 1: low emissivity glass, its structure is followed successively by: the silver layer of substrate of glass, 10 nanometer thickness, the medium layer of 11 nanometer thickness.Medium layer adopts silicon oxide thin film, the position that silicon components is the highest, and specific refractory power is controlled at 4.0, the position that silicon components is minimum, specific refractory power is 1.5.The visible light transmissivity of this low emissivity glass surpasses 75%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 2: low emissivity glass, its structure is followed successively by: the silver layer of substrate of glass, 10 nanometer thickness, the medium layer of 12 nanometer thickness.Medium layer adopts the silicon nitrogen film, the position that silicon components is the highest, and specific refractory power is controlled at 3.8, the position that silicon components is minimum, specific refractory power is 2.0.The visible light transmissivity of this low emissivity glass surpasses 80%, and it is 60% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 3: low emissivity glass, its structure is followed successively by: the silver layer of substrate of glass, 10 nanometer thickness, the medium layer of 20 nanometer thickness.Medium layer adopts the silica nitrogen film, the position that silicon components is the highest, and specific refractory power is controlled at 3.0, the position that silicon components is minimum, specific refractory power is 1.6.The visible light transmissivity of this low emissivity glass surpasses 80%, and it is 60% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 4: low emissivity glass, its structure is followed successively by: the titanium sticking power of substrate of glass, 2 nanometer thickness is strengthened the silver layer of layer, 9 nanometer thickness, the titanium sticking power of 2 nanometer thickness is strengthened the medium layer of layer, 12 nanometer thickness.Medium layer adopts silicon oxide thin film, the position that silicon components is the highest, and specific refractory power is controlled at 4.0, the position that silicon components is minimum, specific refractory power is 1.5.The visible light transmissivity of this low emissivity glass surpasses 65%, and it is 50% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 5: low emissivity glass, its structure is followed successively by: the zinc oxide sticking power of substrate of glass, 2 nanometer thickness is strengthened the silver layer of layer, 10 nanometer thickness, the zinc oxide sticking power of 2 nanometer thickness is strengthened the medium layer of layer, 12 nanometer thickness.Medium layer adopts the silicon nitrogen film, the position that silicon components is the highest, and specific refractory power is controlled at 3.5, the position that silicon components is minimum, specific refractory power is 2.0; The visible light transmissivity of this low emissivity glass surpasses 70%, and it is 50% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 6: but the low emissivity glass of tempering, and its structure is followed successively by: the zinc oxide sticking power of substrate of glass, 2 nanometer thickness is strengthened the silver layer of layer, 10 nanometer thickness, the zinc oxide sticking power of 2 nanometer thickness is strengthened layer, silicon dielectric layer.Medium layer adopts 2 sublayers, is made of thick 5 nanometers of silicon film wherein, thick 170 nanometers of silica membrane respectively silicon film and silica membrane.The visible light transmissivity of this low emissivity glass surpasses 75%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.Because thickness is up to the provide protection of the silicon-dioxide of 170 nanometers, it is constant substantially that this low emissivity glass carries out tempering processing back performance.
Embodiment 7: but the low emissivity glass of tempering, and its structure is followed successively by: the zinc oxide sticking power of substrate of glass, 2 nanometer thickness is strengthened the silver layer of layer, 10 nanometer thickness, the zinc oxide sticking power of 2 nanometer thickness is strengthened layer, silicon dielectric layer.Medium layer adopts 3 sublayers, is made of thick 5 nanometers of silicon film wherein, thick 30 nanometers of silicon nitride film, thick 110 nanometers of silica membrane respectively silicon film, silicon nitride and silica membrane.The visible light transmissivity of this low emissivity glass surpasses 75%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.Because thickness is up to the provide protection of the silicon-dioxide of 170 nanometers, it is constant substantially that this low emissivity glass carries out tempering processing back performance.
Claims (7)
1. low emissivity glass has single silver coating structure, it is characterized in that: this low emissivity glass only adopts a medium layer, in its basic structure, from bottom to top comprises substrate of glass 10, silver layer 11, medium layer 12 successively; Described medium layer is made of 1 to 5 sublayer, and the sublayer is made of silicon film, silicon oxide thin film, silicon nitrogen film or silica nitrogen film.
2. low emissivity glass according to claim 1 is characterized in that: the silicon oxide thin film of sublayer can be the uniform silica membrane of component in the described formation medium layer; The silicon oxide thin film that constitutes the medium layer sublayer also can be the silicon oxide thin film of the atom number of oxygen and silicon than the content gradually variational that gradually changes, central plane with this sublayer is a symmetrical plane, silicon components and specific refractory power are symmetrically distributed in the both sides up and down of this central plane, silicon components and the highest part of specific refractory power are positioned at the central plane of this sublayer, and the part that silicon components and specific refractory power are minimum is positioned at outermost two planes, this sublayer.
3. low emissivity glass according to claim 1 is characterized in that: the silicon nitrogen film of sublayer can be the uniform silicon nitride film of component in the described formation medium layer; The silicon nitrogen film that constitutes the medium layer sublayer also can be the silicon nitrogen film of the atom number of nitrogen and silicon than the content gradually variational that gradually changes, central plane with this sublayer is a symmetrical plane, silicon components and specific refractory power are symmetrically distributed in the both sides up and down of this central plane, silicon components and the highest part of specific refractory power are positioned at the central plane of this sublayer, and the part that silicon components and specific refractory power are minimum is positioned at outermost two planes, this sublayer.
4. low emissivity glass according to claim 1, it is characterized in that: the silica nitrogen film of described formation medium layer sublayer is the silicon oxide thin film of the atom number of oxygen, nitrogen and silicon than the content gradually variational that gradually changes, central plane with this sublayer is a symmetrical plane, silicon components and specific refractory power are symmetrically distributed in the both sides up and down of this central plane, silicon components and the highest part of specific refractory power are positioned at the central plane of this sublayer, and the part that silicon components and specific refractory power are minimum is positioned at outermost two planes, this sublayer.
5. low emissivity glass according to claim 1 is characterized in that: if comprise the sublayer that silicon film constitutes in the described medium layer, then this sublayer and silver layer are adjacent.
6. low emissivity glass according to claim 1, it is characterized in that: increasing sticking power reinforcement layer between glass and the silver layer and between silver layer and the medium layer, this layer adopts a kind of in the metal or alloy films such as aluminium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, nickel, stainless steel, and its thickness is less than 3 nanometers.
7. low emissivity glass according to claim 1, it is characterized in that: increasing sticking power reinforcement layer between glass and the silver layer and between silver layer and the medium layer, this layer adopts a kind of in the films such as aluminium nitride, titanium nitride, zirconium nitride, hafnium nitride, vanadium nitride, niobium nitride, tantalum nitride, titanium oxide, zirconium white, hafnia, vanadium oxide, niobium oxides, tantalum oxide, zinc oxide, stannic oxide, Indium sesquioxide, tin indium oxide, and it is thick in 10 nanometers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910235379A CN101691282A (en) | 2009-10-22 | 2009-10-22 | Low radiation glass |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910235379A CN101691282A (en) | 2009-10-22 | 2009-10-22 | Low radiation glass |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102958863A (en) * | 2010-06-21 | 2013-03-06 | 肖特公开股份有限公司 | Lining or reflector material for high-temperature applications |
| CN104608434A (en) * | 2015-02-12 | 2015-05-13 | 华中科技大学 | A low-emissivity film |
| CN108793768A (en) * | 2018-06-29 | 2018-11-13 | 南通安企熙医疗科技有限公司 | A kind of low emissivity glass with ZrN layers |
| CN110467360A (en) * | 2019-09-20 | 2019-11-19 | 四川南玻节能玻璃有限公司 | A kind of high transparency low radiation coated glass |
| CN114591004A (en) * | 2022-04-18 | 2022-06-07 | 邓凯 | Single silver layer HTLE glass |
-
2009
- 2009-10-22 CN CN200910235379A patent/CN101691282A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102958863A (en) * | 2010-06-21 | 2013-03-06 | 肖特公开股份有限公司 | Lining or reflector material for high-temperature applications |
| CN102958863B (en) * | 2010-06-21 | 2016-06-15 | 肖特公开股份有限公司 | For lining material or the reflecting material of high temperature application |
| CN104608434A (en) * | 2015-02-12 | 2015-05-13 | 华中科技大学 | A low-emissivity film |
| CN108793768A (en) * | 2018-06-29 | 2018-11-13 | 南通安企熙医疗科技有限公司 | A kind of low emissivity glass with ZrN layers |
| CN108793768B (en) * | 2018-06-29 | 2020-07-21 | 广东新华强玻璃科技有限公司 | Low-emissivity glass with ZrN layer |
| CN110467360A (en) * | 2019-09-20 | 2019-11-19 | 四川南玻节能玻璃有限公司 | A kind of high transparency low radiation coated glass |
| CN114591004A (en) * | 2022-04-18 | 2022-06-07 | 邓凯 | Single silver layer HTLE glass |
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Application publication date: 20100407 |