W–Ti–N films were deposited by reactive DC magnetron sputtering from a W–Ti (30 at.%) target, in ... more W–Ti–N films were deposited by reactive DC magnetron sputtering from a W–Ti (30 at.%) target, in a mixture of argon and nitrogen at a total pressure of 0.5 Pa, onto steel and silicon substrates. The crystal structure, microstructure, composition, micro-hardness and residual stress were studied as a function of the partial pressure of nitrogen. Films containing less than 30 at.% nitrogen were composed of a mixture of b.c.c. W and f.c.c. W2N phases, while only the f.c.c. phase, probably WxTi1−xNy, was present in the films with a nitrogen concentration of [N]≥36 at.%. The microhardness of the W–Ti–N films increased with increasing nitrogen concentration from 25 GPa for [N]=0 up to a maximum of approximately 65 GPa at [N]=25 at.%. This was accompanied by increasing microstrain, while the compressive residual stress remained in the range of 1.3–2.3 GPa. The single-phase W–Ti–N films, with [N]≥36 at.%, exhibited a micro-hardness of approximately 40 GPa and a large compressive stress of, a...
The chemical vapor deposition (CVD) process of a-C:H films from methane and argon gas mixtures in... more The chemical vapor deposition (CVD) process of a-C:H films from methane and argon gas mixtures in an electron cyclotron resonance (ECR) microwave plasma has been studied. The formation of a-C:H films in a wide range of basic parameters has been investigated. The basic parameters are the following: the total pressure of the working gas mixture, the composition of the gas mixture, the magnitude of microwave power absorbed in a plasma, the location of the substrate LECR-S with respect to the position of ECR and substrate material (Si, ceramic). We found that extremely low or zero growth rate of the a-C:H films takes place in the cases when (i) the substrate is placed in the ECR plane or its close vicinity and (ii) a high microwave power is used; the latter situation occurs when the power is about 300 W or greater. The increase in deposition rate takes place under the increase of the LECR-S distance or under the decrease of the microwave power. The deposition rate of a-C:H films on the ...
The energy distribution and composition of the ion flux on a substrate during reactive magnetron ... more The energy distribution and composition of the ion flux on a substrate during reactive magnetron sputtering of TiN and TiWN films were studied by the energy resolved mass spectroscopy. The entrance flange of the probe Hiden EQP500 was positioned in a distance of 50 mm from the Ti or WTi (70:30 at.%) target 100 mm in diameter. The sputtering was carried out in a mixture of argon and nitrogen of various compositions at pressures from 0.05 to 10 Pa and discharge currents from 0.5 to 7 A. The energy spectra of ions at low pressures were characterized by extended high-energy tails. The high energy of sputtered (metal) atoms follows from their distribution at the cathode after being sputtered. The high-energy gas ions (Ar+, N2+, N+) stem from two sources. One is the transfer of energy in the collisions with the sputtered metal atoms. The other is the reflection of the energetic ions from heavy elements in the target. A strong reduction of the ion energy at the substrate was found when the...
Chromium films deposited by magnetron sputtering on non-heated substrates from non-thermalized at... more Chromium films deposited by magnetron sputtering on non-heated substrates from non-thermalized atoms crystallize in regular bcc Cr phase, with non-uniform microstructure and lattice constant along the thickness. These non-uniformities decrease with elevation of the substrate temperature and vanish at a certain value. However films deposited on non-heated substrates from thermalized atoms crystallize in a low-temperature Cr phase and have almost uniform microstructure. We have developed a model explaining this effect, which is based on the supposition of the formation of a “hot” layer on the growth surface during deposition, whose temperature depends on the flux of energy delivered to the condensation surface and can be noticeably higher than the substrate temperature. Detailed investigation of the structure of Cr films deposited at various temperatures and energy fluxes delivered to the growth surface, correlate well with the above model.
Ti–Cu–N nanocomposite films with various copper contents were deposited by simultaneous co-deposi... more Ti–Cu–N nanocomposite films with various copper contents were deposited by simultaneous co-deposition of titanium nitride and copper using a reactive arc ion plating and magnetron sputtering hybrid system. The structure and mechanical properties of these films were found to be dependent on the copper concentration. X-ray diffraction analysis and high resolution and conventional transmission electron microscopy analysis showed that the grain size in films decreases with increasing the copper content while no sign of copper phase was observed. Ti–Cu–N films containing 1.5 at.% of copper exhibited maximum hardness of 45 GPa and relatively low friction coefficient of 0.3. The further increase of copper content in the film resulted in sharp decrease of hardness. The obtained results are discussed with the model of film growth in the presence of impurities as related to the concept for the design of superhard nanocomposite materials. The role of soft metallic phase in two-phase composite ...
The existence of a low-temperature (LT) chromium phase with the primitive cubic lattice in chromi... more The existence of a low-temperature (LT) chromium phase with the primitive cubic lattice in chromium films is questionable. We revealed that the main condition necessary for LT phase formation in magnetron sputtered Cr films is the deposition of the film from low-energy atomic flux, which is accomplished during deposition at a high working gas pressure. The films deposited from high-energy atomic flux at a low gas pressure crystallized in the ordinary bcc phase independently of the substrate temperature. This effect is explained by assuming the existence of a “hot” layer on the growth surface whose temperature can be noticeably higher than the substrate temperature.
This paper presents a modification to conventional magnetron sputtering systems. The introduction... more This paper presents a modification to conventional magnetron sputtering systems. The introduction of a grid in front of the target increases the metal ion ratio. Using OES and observing both Ti neutrals and ions, it was confirmed that the relative ionization could be qualitatively extended with grid-attached magnetron sputtering compared with a conventional magnetron system. On the other hand, the relative ionization of Ar decreased. Our results also show that the Ti films deposited by conventional magnetron exhibit (100) preferred orientation as the bias voltage increased. On the other hand, in the case of the grid-attached magnetron, the Ti films exhibit highly preferred (002) orientation with increasing bias voltage. The experiments clearly demonstrated that a dense Ti film with a smooth, specular reflecting surface can be produced using the grid-attached magnetron with increased Ti ion flux compared to the conventional magnetron.
Structure evolution of amorphous carbon (a-C) films deposited by dc magnetron sputtering of graph... more Structure evolution of amorphous carbon (a-C) films deposited by dc magnetron sputtering of graphite in argon was investigated as a function of substrate temperature Ts (20–800°C) and dc substrate bias voltage Ub (floating — −175 V). Film structure was studied by transmission electron microscopy, selected area electron diffraction, reflective high energy electron diffraction and Raman spectroscopy. Film resistivity in two directions — parallel and perpendicular to the substrate — was also measured. The results obtained allow for the assumption that the film structure is based on coexistence of D- and G-phases formed of sp2 bonded carbon atoms. G-phase consists of small graphite-like ordered areas embedded in continuous uniform amorphous D-phase. The evolution of a-C film structure in 20−450°C interval occurs by temperature induced graphite-like ordering of small areas within D-phase (G-phase nucleation). In the 500–800°C range the change of C-film growth mechanism takes place. Inste...
The effect of extremely high temperatures developing on the surface during the condensation of sp... more The effect of extremely high temperatures developing on the surface during the condensation of sputtered atoms has been discovered for the first time by direct surface temperature measurements. This temperature is considerably higher than the temperature of the solid film beneath and proportional to the flux of atoms impinging on the surface. The surface temperature steeply grows as the condensation starts, exists during the period of condensation, and rapidly decays after its termination. The effect is related to the anomalously low thermal conductivity of the superficial layer that is formed by highly mobile atoms arriving on the condensation surface. This superficial layer can be viewed as a new state of matter characterized by its anomalously low thermal conductivity.
Hydrogenated carbon and carbon nitride films were synthesized by closed field unbalanced magnetro... more Hydrogenated carbon and carbon nitride films were synthesized by closed field unbalanced magnetron sputtering (CFUBM). The deposition rate, structure and mechanical properties of these films were studied as a function of applied bias voltage and nitrogen partial pressure on substrate during deposition. The film structures were investigated in Raman spectroscopy and FESEM. The hardness and elastic modulus were evaluated by nano-indentation test. Hydrogenated carbon films deposited at a bias of −200 V exhibited a maximum hardness and a minimum electrical resistivity and hydrogenated carbon nitride films synthesized at a nitrogen partial pressure of 0.2 Pa showed minimum friction coefficient.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
We report on the results of measurements of the temperature T{sup F}{sub surf} which developed on... more We report on the results of measurements of the temperature T{sup F}{sub surf} which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T{sup F}{sub surf} and substrate temperature (T{sub s}) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T{sup F}{sub surf} steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T{sub s} after stopping the deposition. At the same time, the T{sub s} either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T{sub s} remains several times lower than the T{sup F}{sub surf}. The T{sup F}{sub surf} is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achiev...
New physical phenomenon consisting in development of the surface temperature Tsurf, which being e... more New physical phenomenon consisting in development of the surface temperature Tsurf, which being equal to the substrate temperature Ts at the beginning of deposition, steeply increases and becomes several times higher than Ts at the end of the process, is revealed by means of IR-camera and new calorimetric method during sputter deposition of metal films. The reason for the phenomenon is the formation of a liquid-like layer on the growth surface with extremely low (∼109 times lower than for metals) thermal conductivity. Variation in the film structure along thickness correlates with the variation in Tsurf. To explain these effects we developed a model according to which film grows by “gas→liquid→solid” rather than “gas→solid” mechanism which is realized provided that the film grows from energetic atoms.
Crystalline poly-Si thin films were deposited on Corning glass substrates at a temperature of 500... more Crystalline poly-Si thin films were deposited on Corning glass substrates at a temperature of 500 °C using a pulsed d.c. magnetron sputtering source. The increased bias voltage causes an enhancement of the potential difference between the plasma and substrate. In case of the bipolar pulsed d.c. magnetron sputtering, Vp shows higher value than that in the unipolar pulsed d.c. as the bias voltage increases. Therefore, the mobility of the sputtered adatoms increases by the surface heat accumulation of energetic sputtered particles with the increased bias voltage. Consequently, more higher mobility (41 cm2 Vs−1) and crystallinity were obtained for the Si film grown with the bipolar-pulsed d.c. magnetron sputtering due to the energy incorporation by enhanced bombardment of Ar ions.
Using high-resolution transmission electron microscopy, selected area electron diffraction and X-... more Using high-resolution transmission electron microscopy, selected area electron diffraction and X-ray diffraction methods, the microstructures and lattice parameters of different parts of Cr films deposited by magnetron sputtering under different deposition conditions have been studied. It was revealed that the microstructure and lattice parameter of the films deposited onto nonheated substrates vary in the film thickness direction. Lattice parameter a has a maximal value in the film-substrate interface region and gradually decreases towards the conventional value in the middle and upper film parts. In accordance with this, the internal tensile stress decreases, while the grain size increases in the direction from the substrate to the film surface. Elevation of the substrate temperature results in smoothing of nonuniformity of the film microstructure and stress distribution along the thickness. At a certain combination of a substrate temperature and bias voltage, unstressed large-gra...
We have studied the mechanism for increasing the hardness of nanocomposite (W, Ti)N film material... more We have studied the mechanism for increasing the hardness of nanocomposite (W, Ti)N film materials (reactive magnetron sputtering of the alloy W - 30 at.% Ti) and TiN - Cu (reactive vacuum arc vaporization of Ti with simultaneous magnetron sputtering of copper). By studying the composition, structure, and microhardness of condensates obtained under different deposition conditions, we have established a correlation between film microhardness and structure. We have shown that the microhardness of a material based on (W, Ti)N is inversely proportional to the grain size. Limitation of the mobility of film-forming species and their access to the growing grains present on the surface by molecules of the nitrides WN and TiN is the mechanism limiting grain growth. A similar mechanism is also operative in formation of a composite coating based on hard (TiN) and soft (Cu) metallic phases. In this case, copper atoms are a grain growth inhibitor. They do not react with the titanium nitride and ...
We present the results of an investigation into correlation between the type of film-forming spec... more We present the results of an investigation into correlation between the type of film-forming species (FFS) (atoms and molecules) and the structure of the films deposited by reactive magnetron sputtering of W-30 at.%Ti alloy in an Ar–N2 working gas. Mass-spectrometric studies have revealed that the FFS flux contains both atomic (W, Ti, N) and molecular (WN, TiN) species and the flux composition depends on the nitrogen partial pressure in a working gas. At low nitrogen partial pressures (PN20.2 Pa) are formed from monophase (W,Ti)2 N material with 2–4 times larger crystallite size. The microhardness of the films deposited from the FFS flux containing mainly metal atoms and nitride molecules was noticeably higher than that of the films formed mostly from metal and nitrogen atoms.
W–Ti–N films were deposited by reactive DC magnetron sputtering from a W–Ti (30 at.%) target, in ... more W–Ti–N films were deposited by reactive DC magnetron sputtering from a W–Ti (30 at.%) target, in a mixture of argon and nitrogen at a total pressure of 0.5 Pa, onto steel and silicon substrates. The crystal structure, microstructure, composition, micro-hardness and residual stress were studied as a function of the partial pressure of nitrogen. Films containing less than 30 at.% nitrogen were composed of a mixture of b.c.c. W and f.c.c. W2N phases, while only the f.c.c. phase, probably WxTi1−xNy, was present in the films with a nitrogen concentration of [N]≥36 at.%. The microhardness of the W–Ti–N films increased with increasing nitrogen concentration from 25 GPa for [N]=0 up to a maximum of approximately 65 GPa at [N]=25 at.%. This was accompanied by increasing microstrain, while the compressive residual stress remained in the range of 1.3–2.3 GPa. The single-phase W–Ti–N films, with [N]≥36 at.%, exhibited a micro-hardness of approximately 40 GPa and a large compressive stress of, a...
The chemical vapor deposition (CVD) process of a-C:H films from methane and argon gas mixtures in... more The chemical vapor deposition (CVD) process of a-C:H films from methane and argon gas mixtures in an electron cyclotron resonance (ECR) microwave plasma has been studied. The formation of a-C:H films in a wide range of basic parameters has been investigated. The basic parameters are the following: the total pressure of the working gas mixture, the composition of the gas mixture, the magnitude of microwave power absorbed in a plasma, the location of the substrate LECR-S with respect to the position of ECR and substrate material (Si, ceramic). We found that extremely low or zero growth rate of the a-C:H films takes place in the cases when (i) the substrate is placed in the ECR plane or its close vicinity and (ii) a high microwave power is used; the latter situation occurs when the power is about 300 W or greater. The increase in deposition rate takes place under the increase of the LECR-S distance or under the decrease of the microwave power. The deposition rate of a-C:H films on the ...
The energy distribution and composition of the ion flux on a substrate during reactive magnetron ... more The energy distribution and composition of the ion flux on a substrate during reactive magnetron sputtering of TiN and TiWN films were studied by the energy resolved mass spectroscopy. The entrance flange of the probe Hiden EQP500 was positioned in a distance of 50 mm from the Ti or WTi (70:30 at.%) target 100 mm in diameter. The sputtering was carried out in a mixture of argon and nitrogen of various compositions at pressures from 0.05 to 10 Pa and discharge currents from 0.5 to 7 A. The energy spectra of ions at low pressures were characterized by extended high-energy tails. The high energy of sputtered (metal) atoms follows from their distribution at the cathode after being sputtered. The high-energy gas ions (Ar+, N2+, N+) stem from two sources. One is the transfer of energy in the collisions with the sputtered metal atoms. The other is the reflection of the energetic ions from heavy elements in the target. A strong reduction of the ion energy at the substrate was found when the...
Chromium films deposited by magnetron sputtering on non-heated substrates from non-thermalized at... more Chromium films deposited by magnetron sputtering on non-heated substrates from non-thermalized atoms crystallize in regular bcc Cr phase, with non-uniform microstructure and lattice constant along the thickness. These non-uniformities decrease with elevation of the substrate temperature and vanish at a certain value. However films deposited on non-heated substrates from thermalized atoms crystallize in a low-temperature Cr phase and have almost uniform microstructure. We have developed a model explaining this effect, which is based on the supposition of the formation of a “hot” layer on the growth surface during deposition, whose temperature depends on the flux of energy delivered to the condensation surface and can be noticeably higher than the substrate temperature. Detailed investigation of the structure of Cr films deposited at various temperatures and energy fluxes delivered to the growth surface, correlate well with the above model.
Ti–Cu–N nanocomposite films with various copper contents were deposited by simultaneous co-deposi... more Ti–Cu–N nanocomposite films with various copper contents were deposited by simultaneous co-deposition of titanium nitride and copper using a reactive arc ion plating and magnetron sputtering hybrid system. The structure and mechanical properties of these films were found to be dependent on the copper concentration. X-ray diffraction analysis and high resolution and conventional transmission electron microscopy analysis showed that the grain size in films decreases with increasing the copper content while no sign of copper phase was observed. Ti–Cu–N films containing 1.5 at.% of copper exhibited maximum hardness of 45 GPa and relatively low friction coefficient of 0.3. The further increase of copper content in the film resulted in sharp decrease of hardness. The obtained results are discussed with the model of film growth in the presence of impurities as related to the concept for the design of superhard nanocomposite materials. The role of soft metallic phase in two-phase composite ...
The existence of a low-temperature (LT) chromium phase with the primitive cubic lattice in chromi... more The existence of a low-temperature (LT) chromium phase with the primitive cubic lattice in chromium films is questionable. We revealed that the main condition necessary for LT phase formation in magnetron sputtered Cr films is the deposition of the film from low-energy atomic flux, which is accomplished during deposition at a high working gas pressure. The films deposited from high-energy atomic flux at a low gas pressure crystallized in the ordinary bcc phase independently of the substrate temperature. This effect is explained by assuming the existence of a “hot” layer on the growth surface whose temperature can be noticeably higher than the substrate temperature.
This paper presents a modification to conventional magnetron sputtering systems. The introduction... more This paper presents a modification to conventional magnetron sputtering systems. The introduction of a grid in front of the target increases the metal ion ratio. Using OES and observing both Ti neutrals and ions, it was confirmed that the relative ionization could be qualitatively extended with grid-attached magnetron sputtering compared with a conventional magnetron system. On the other hand, the relative ionization of Ar decreased. Our results also show that the Ti films deposited by conventional magnetron exhibit (100) preferred orientation as the bias voltage increased. On the other hand, in the case of the grid-attached magnetron, the Ti films exhibit highly preferred (002) orientation with increasing bias voltage. The experiments clearly demonstrated that a dense Ti film with a smooth, specular reflecting surface can be produced using the grid-attached magnetron with increased Ti ion flux compared to the conventional magnetron.
Structure evolution of amorphous carbon (a-C) films deposited by dc magnetron sputtering of graph... more Structure evolution of amorphous carbon (a-C) films deposited by dc magnetron sputtering of graphite in argon was investigated as a function of substrate temperature Ts (20–800°C) and dc substrate bias voltage Ub (floating — −175 V). Film structure was studied by transmission electron microscopy, selected area electron diffraction, reflective high energy electron diffraction and Raman spectroscopy. Film resistivity in two directions — parallel and perpendicular to the substrate — was also measured. The results obtained allow for the assumption that the film structure is based on coexistence of D- and G-phases formed of sp2 bonded carbon atoms. G-phase consists of small graphite-like ordered areas embedded in continuous uniform amorphous D-phase. The evolution of a-C film structure in 20−450°C interval occurs by temperature induced graphite-like ordering of small areas within D-phase (G-phase nucleation). In the 500–800°C range the change of C-film growth mechanism takes place. Inste...
The effect of extremely high temperatures developing on the surface during the condensation of sp... more The effect of extremely high temperatures developing on the surface during the condensation of sputtered atoms has been discovered for the first time by direct surface temperature measurements. This temperature is considerably higher than the temperature of the solid film beneath and proportional to the flux of atoms impinging on the surface. The surface temperature steeply grows as the condensation starts, exists during the period of condensation, and rapidly decays after its termination. The effect is related to the anomalously low thermal conductivity of the superficial layer that is formed by highly mobile atoms arriving on the condensation surface. This superficial layer can be viewed as a new state of matter characterized by its anomalously low thermal conductivity.
Hydrogenated carbon and carbon nitride films were synthesized by closed field unbalanced magnetro... more Hydrogenated carbon and carbon nitride films were synthesized by closed field unbalanced magnetron sputtering (CFUBM). The deposition rate, structure and mechanical properties of these films were studied as a function of applied bias voltage and nitrogen partial pressure on substrate during deposition. The film structures were investigated in Raman spectroscopy and FESEM. The hardness and elastic modulus were evaluated by nano-indentation test. Hydrogenated carbon films deposited at a bias of −200 V exhibited a maximum hardness and a minimum electrical resistivity and hydrogenated carbon nitride films synthesized at a nitrogen partial pressure of 0.2 Pa showed minimum friction coefficient.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
We report on the results of measurements of the temperature T{sup F}{sub surf} which developed on... more We report on the results of measurements of the temperature T{sup F}{sub surf} which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T{sup F}{sub surf} and substrate temperature (T{sub s}) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T{sup F}{sub surf} steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T{sub s} after stopping the deposition. At the same time, the T{sub s} either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T{sub s} remains several times lower than the T{sup F}{sub surf}. The T{sup F}{sub surf} is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achiev...
New physical phenomenon consisting in development of the surface temperature Tsurf, which being e... more New physical phenomenon consisting in development of the surface temperature Tsurf, which being equal to the substrate temperature Ts at the beginning of deposition, steeply increases and becomes several times higher than Ts at the end of the process, is revealed by means of IR-camera and new calorimetric method during sputter deposition of metal films. The reason for the phenomenon is the formation of a liquid-like layer on the growth surface with extremely low (∼109 times lower than for metals) thermal conductivity. Variation in the film structure along thickness correlates with the variation in Tsurf. To explain these effects we developed a model according to which film grows by “gas→liquid→solid” rather than “gas→solid” mechanism which is realized provided that the film grows from energetic atoms.
Crystalline poly-Si thin films were deposited on Corning glass substrates at a temperature of 500... more Crystalline poly-Si thin films were deposited on Corning glass substrates at a temperature of 500 °C using a pulsed d.c. magnetron sputtering source. The increased bias voltage causes an enhancement of the potential difference between the plasma and substrate. In case of the bipolar pulsed d.c. magnetron sputtering, Vp shows higher value than that in the unipolar pulsed d.c. as the bias voltage increases. Therefore, the mobility of the sputtered adatoms increases by the surface heat accumulation of energetic sputtered particles with the increased bias voltage. Consequently, more higher mobility (41 cm2 Vs−1) and crystallinity were obtained for the Si film grown with the bipolar-pulsed d.c. magnetron sputtering due to the energy incorporation by enhanced bombardment of Ar ions.
Using high-resolution transmission electron microscopy, selected area electron diffraction and X-... more Using high-resolution transmission electron microscopy, selected area electron diffraction and X-ray diffraction methods, the microstructures and lattice parameters of different parts of Cr films deposited by magnetron sputtering under different deposition conditions have been studied. It was revealed that the microstructure and lattice parameter of the films deposited onto nonheated substrates vary in the film thickness direction. Lattice parameter a has a maximal value in the film-substrate interface region and gradually decreases towards the conventional value in the middle and upper film parts. In accordance with this, the internal tensile stress decreases, while the grain size increases in the direction from the substrate to the film surface. Elevation of the substrate temperature results in smoothing of nonuniformity of the film microstructure and stress distribution along the thickness. At a certain combination of a substrate temperature and bias voltage, unstressed large-gra...
We have studied the mechanism for increasing the hardness of nanocomposite (W, Ti)N film material... more We have studied the mechanism for increasing the hardness of nanocomposite (W, Ti)N film materials (reactive magnetron sputtering of the alloy W - 30 at.% Ti) and TiN - Cu (reactive vacuum arc vaporization of Ti with simultaneous magnetron sputtering of copper). By studying the composition, structure, and microhardness of condensates obtained under different deposition conditions, we have established a correlation between film microhardness and structure. We have shown that the microhardness of a material based on (W, Ti)N is inversely proportional to the grain size. Limitation of the mobility of film-forming species and their access to the growing grains present on the surface by molecules of the nitrides WN and TiN is the mechanism limiting grain growth. A similar mechanism is also operative in formation of a composite coating based on hard (TiN) and soft (Cu) metallic phases. In this case, copper atoms are a grain growth inhibitor. They do not react with the titanium nitride and ...
We present the results of an investigation into correlation between the type of film-forming spec... more We present the results of an investigation into correlation between the type of film-forming species (FFS) (atoms and molecules) and the structure of the films deposited by reactive magnetron sputtering of W-30 at.%Ti alloy in an Ar–N2 working gas. Mass-spectrometric studies have revealed that the FFS flux contains both atomic (W, Ti, N) and molecular (WN, TiN) species and the flux composition depends on the nitrogen partial pressure in a working gas. At low nitrogen partial pressures (PN20.2 Pa) are formed from monophase (W,Ti)2 N material with 2–4 times larger crystallite size. The microhardness of the films deposited from the FFS flux containing mainly metal atoms and nitride molecules was noticeably higher than that of the films formed mostly from metal and nitrogen atoms.
Uploads