Female Catla catla brood fish were reared in 12 ponds (0.03–0.05 ha) and fed daily once in the mo... more Female Catla catla brood fish were reared in 12 ponds (0.03–0.05 ha) and fed daily once in the morning at 30 g kg−1 body weight for 150 days with formulated feeds (six treatment feeds each with two replicates of pond) to study the breeding performances. The feed ingredients were rice polish (RP) and groundnut oil cake (GNOC) (1 : 1) for T1 (control); RP, GNOC and fish meal (FM) (3 : 4 : 3) for T2; RP, GNOC, FM and soybean meal (SM) (3 : 4 : 2 : 1) for T3; RP, GNOC, FM and SM (3 : 4 : 1: 2) for T4; RP, GNOC, FM and SM (3 : 4 : 1 : 2) with added vitamin–mineral (VM) premix for T5; RP, GNOC, FM and SM (3 : 4 : 1 : 2) with added VM and vegetable oil for T6. Results indicated that except the feed T6, all other feed (T2–T5) with 338–344 g crude protein (CP) kg−1 feed enhanced the breeding performances of the fish compared with control (262 g CP kg−1). The feed T3 showed the best performances in terms of matured female (%), fully bred female (%), relative fecundity, spawn production and profit. This suggests that a combination of RP, GNOC, FM and SM at definite proportion could supply the essential nutrients needed for higher breeding response.
... Page 3. 4102 H. P. SHARMA, JAI SHANKER, AND M. P. VERMA TABLE II. ... Using (3.1)Van Vechten ... more ... Page 3. 4102 H. P. SHARMA, JAI SHANKER, AND M. P. VERMA TABLE II. ... Using (3.1)Van Vechten obtained the follow-ing expression: E2 = 2 2.48 2" 1.5 &dr f E (3.2} ACKNOWLEDGMENTS Authors are thankful to Dr. S.C. Goyal for use-ful discussions. ...
Communications in Soil Science and Plant Analysis, 2012
We study the effect of plant growth–promoting rhizobacteria (PGPR) along with Mesorhizobium sp. B... more We study the effect of plant growth–promoting rhizobacteria (PGPR) along with Mesorhizobium sp. BHURC02 on nodulation, plant growth, yield, and nutrient content of chickpea (Cicer arietinum L.) under field conditions. A similar study has been conducted for nodulation and plant growth of chickpea in pot experiment under glasshouse conditions. The treatment combination of Mesorhizobium sp. BHURC02 and Pseudomonas fluorescens BHUPSB06 statistically significantly increased nodule number plant–1, dry weight of nodule plant–1, and root and shoot dry weights plant–1 over the control under a glasshouse experiment. The maximum significant increase in nodule number, dry matter, and nutrient content were recorded in co-inoculation of Mesorhizobium sp. BHURC02 and P. fluorescens BHUPSB06 followed by co-inoculation of Mesorhizobium sp., Azotobacter chroococcum, and Bacillus megatrium BHUPSB14 over uninoculated control in a 2-year field study. Hence, co-inoculation of Mesorhizobium sp. and P. fluorescens may be effective indigenous PGPR for chickpea production.
The widespread use of large scale and medium scale integrated circuits, coupled with the trend to... more The widespread use of large scale and medium scale integrated circuits, coupled with the trend towards larger boards, made manual generation of test patterns very expensive, somewhat ineffective, and rather difficult to update for design changes. The advent of MOS LSI's with extremely large gate density made manual test-verification, the process of finding failures detected by a given test pattern, an impossibility. Therefore, a series of programs was developed, over the years, to completely automate the test cycle—using logic description files as input, the final output for test generation is a test deck compiled in the language of card test equipment and, in the case of test-verification, lists of detected and undetected failures. All this is accomplished within the global constraint of complete (nearly 100%) coverage and prevailing test floor practices.
Requests for reprints should be sent to Harry Triandis, Department of Psychology, University of I... more Requests for reprints should be sent to Harry Triandis, Department of Psychology, University of Illinois, Champaign, IL 61 820, USA. ... Australian Journal of Psychology Vol. 38, No. 3, 1986, pp. 257-267 ... The dimension of individualism-collectivism, as identified by ...
The electronic polarizabilities of ions in the TiO2 crystal have been calculated by taking into a... more The electronic polarizabilities of ions in the TiO2 crystal have been calculated by taking into account the effect of the Madelung potential as originally pointed out by Ruffa. The calculation is based on the free-ion polarizabilities reported by Pauling. The estimated electronic polarizabilities are shown to be consistent with the polarizability-radius-cube relation according to which the electronic polarizability of an ion should vary as the cube of its radius. The ionic radius of the Ti4+ ion thus obtained agrees rather closely with that deduced from x-ray maps of the electron-density distribution. Our calculations suggest an explanation of the observed birefringence in rutile by assuming the anisotropy of the oxygen-ion polarizability to arise from a spheroidal shape of the ion with semiaxes which lead to the observed ca ratio of the rutile crystal.
The strain derivatives of the electronic dielectric constant in LiF, NaCl, KCl, KBr, KI, RbCl and... more The strain derivatives of the electronic dielectric constant in LiF, NaCl, KCl, KBr, KI, RbCl and MgO crystals have been calculated with the help of the Clausius-Mossotti model. The variation of electronic polarizabilities with compressive stress has been derived by taking into account the distortion of ions, within the framework of the deformation dipole model. It has been observed that consideration of the variation of polarizabilities with compressive stress improves the agreement between theory and experiment. The photoelastic behaviour of MgO is predicted to be of the opposite nature to that of alkali halides in conformity with the experimental observations.
A technology similar to silicon-on-insulator is highly desirable for III-V electronics to support... more A technology similar to silicon-on-insulator is highly desirable for III-V electronics to support scaling for future generations. This letter reports the first realization of strained GaN quantum-well transistors embedded in unstrained AlN as the insulator. The molecular beam epitaxy (MBE)-grown heterostructure consisting of an ultrathin GaN channel buried in strain-free AIN barriers is favorable for scaling by the suppression of short-channel effects. Ohmic contacts are realized with MBE-regrown heavily Si-doped n+ GaN. For long-channel devices, a saturation drain current of ~0.7 A/mm at VGS = +3 V and a peak extrinsic transconductance of ~160 mS/mm around VGS = +1 V are measured at VDS = +10 V. No hysteresis is observed in the C-V measurement, indicating the high quality of all binary nitride heterostructures. The demonstrated device structure offers a high promise for high-frequency and high-power applications in the future. The strain-free barrier has the potential to enhance the reliability of GaN transistors.
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.13Al0... more Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.13Al0.83Ga0.04 N/AlN/GaN heterostructure on SiC substrate were fabricated. The 66-nm-long gate device shows a dc drain current density of 2.1 A/mm, a peak extrinsic transconductance of 548 mS/mm, and a record current gain cutoff frequency fT of 220 GHz for quaternary barrier GaN-based HEMTs, which is also among the highest fT for all GaN-based HEMTs. The large Lg ·fT product of 14.5 GHz ·μm with a gate-length-to-barrier-thickness aspect ratio of 5.8 indicates a high effective electron velocity of 0.9 ×107 cm/s, attributed to a high electron Hall mobility (1790 cm2/V ·s at an ns of 1.8 ×1013-2)-the highest reported in GaN-channel HEMTs with In-containing barriers. An intrinsic electron velocity of 1.7 ×107 cm/s, extracted from conventional Moll delay-time analysis, is comparable to that reported in the state-of-art AlGaN/GaN HEMTs.
Abstract Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spont... more Abstract Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al 2 O 3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the underlying nitride substrate. Through capacitance-voltage measurement on a series of samples of varying dielectric thicknesses, we find the ...
Abstract Indium gallium nitride nanowires show promise as being prime candidates for optical devi... more Abstract Indium gallium nitride nanowires show promise as being prime candidates for optical devices since they can be grown with band gaps spanning the visible spectra, while at the same time can be composed of stress free material. The goal of the work presented here was to obtain InGaN nanowires producing green emission at room temperature. Two growth recipes were found to yield InGaN nanowire growth on silicon substrates using plasma-assisted molecular beam epitaxy. At room temperature the photoluminescence ( ...
In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Elec... more In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Electroluminescence from AlGaN regions indicates that AlχGai.χN QWs and AlyGaι.yN barriers can now be used to obtain respectable emission intensities for deeper UV or higher energy photons. A number of advantages of N-face optoelectronic devices p-type polarization doping, and better electron and hole injection facilitated by the correct orientation of the polarization field were pointed out.
Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-e... more Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the metal/ n+-GaN resistance ( ~ 0.16 Ω·mm), the resistance induced by the interface between the regrown n+ GaN and HEMT channel is found to be 0.05-0.075 Ω·mm over the entire temperature window, indicating a minimal barrier for electron flow at the as-regrown interface. The quantum contact resistance theory suggests that the interface resistance can be further reduced to be <; 0.02 Ω·mm in GaN HEMTs.
Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar cr... more Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.
Female Catla catla brood fish were reared in 12 ponds (0.03–0.05 ha) and fed daily once in the mo... more Female Catla catla brood fish were reared in 12 ponds (0.03–0.05 ha) and fed daily once in the morning at 30 g kg−1 body weight for 150 days with formulated feeds (six treatment feeds each with two replicates of pond) to study the breeding performances. The feed ingredients were rice polish (RP) and groundnut oil cake (GNOC) (1 : 1) for T1 (control); RP, GNOC and fish meal (FM) (3 : 4 : 3) for T2; RP, GNOC, FM and soybean meal (SM) (3 : 4 : 2 : 1) for T3; RP, GNOC, FM and SM (3 : 4 : 1: 2) for T4; RP, GNOC, FM and SM (3 : 4 : 1 : 2) with added vitamin–mineral (VM) premix for T5; RP, GNOC, FM and SM (3 : 4 : 1 : 2) with added VM and vegetable oil for T6. Results indicated that except the feed T6, all other feed (T2–T5) with 338–344 g crude protein (CP) kg−1 feed enhanced the breeding performances of the fish compared with control (262 g CP kg−1). The feed T3 showed the best performances in terms of matured female (%), fully bred female (%), relative fecundity, spawn production and profit. This suggests that a combination of RP, GNOC, FM and SM at definite proportion could supply the essential nutrients needed for higher breeding response.
... Page 3. 4102 H. P. SHARMA, JAI SHANKER, AND M. P. VERMA TABLE II. ... Using (3.1)Van Vechten ... more ... Page 3. 4102 H. P. SHARMA, JAI SHANKER, AND M. P. VERMA TABLE II. ... Using (3.1)Van Vechten obtained the follow-ing expression: E2 = 2 2.48 2&amp;quot; 1.5 &amp;amp;dr f E (3.2} ACKNOWLEDGMENTS Authors are thankful to Dr. S.C. Goyal for use-ful discussions. ...
Communications in Soil Science and Plant Analysis, 2012
We study the effect of plant growth–promoting rhizobacteria (PGPR) along with Mesorhizobium sp. B... more We study the effect of plant growth–promoting rhizobacteria (PGPR) along with Mesorhizobium sp. BHURC02 on nodulation, plant growth, yield, and nutrient content of chickpea (Cicer arietinum L.) under field conditions. A similar study has been conducted for nodulation and plant growth of chickpea in pot experiment under glasshouse conditions. The treatment combination of Mesorhizobium sp. BHURC02 and Pseudomonas fluorescens BHUPSB06 statistically significantly increased nodule number plant–1, dry weight of nodule plant–1, and root and shoot dry weights plant–1 over the control under a glasshouse experiment. The maximum significant increase in nodule number, dry matter, and nutrient content were recorded in co-inoculation of Mesorhizobium sp. BHURC02 and P. fluorescens BHUPSB06 followed by co-inoculation of Mesorhizobium sp., Azotobacter chroococcum, and Bacillus megatrium BHUPSB14 over uninoculated control in a 2-year field study. Hence, co-inoculation of Mesorhizobium sp. and P. fluorescens may be effective indigenous PGPR for chickpea production.
The widespread use of large scale and medium scale integrated circuits, coupled with the trend to... more The widespread use of large scale and medium scale integrated circuits, coupled with the trend towards larger boards, made manual generation of test patterns very expensive, somewhat ineffective, and rather difficult to update for design changes. The advent of MOS LSI's with extremely large gate density made manual test-verification, the process of finding failures detected by a given test pattern, an impossibility. Therefore, a series of programs was developed, over the years, to completely automate the test cycle—using logic description files as input, the final output for test generation is a test deck compiled in the language of card test equipment and, in the case of test-verification, lists of detected and undetected failures. All this is accomplished within the global constraint of complete (nearly 100%) coverage and prevailing test floor practices.
Requests for reprints should be sent to Harry Triandis, Department of Psychology, University of I... more Requests for reprints should be sent to Harry Triandis, Department of Psychology, University of Illinois, Champaign, IL 61 820, USA. ... Australian Journal of Psychology Vol. 38, No. 3, 1986, pp. 257-267 ... The dimension of individualism-collectivism, as identified by ...
The electronic polarizabilities of ions in the TiO2 crystal have been calculated by taking into a... more The electronic polarizabilities of ions in the TiO2 crystal have been calculated by taking into account the effect of the Madelung potential as originally pointed out by Ruffa. The calculation is based on the free-ion polarizabilities reported by Pauling. The estimated electronic polarizabilities are shown to be consistent with the polarizability-radius-cube relation according to which the electronic polarizability of an ion should vary as the cube of its radius. The ionic radius of the Ti4+ ion thus obtained agrees rather closely with that deduced from x-ray maps of the electron-density distribution. Our calculations suggest an explanation of the observed birefringence in rutile by assuming the anisotropy of the oxygen-ion polarizability to arise from a spheroidal shape of the ion with semiaxes which lead to the observed ca ratio of the rutile crystal.
The strain derivatives of the electronic dielectric constant in LiF, NaCl, KCl, KBr, KI, RbCl and... more The strain derivatives of the electronic dielectric constant in LiF, NaCl, KCl, KBr, KI, RbCl and MgO crystals have been calculated with the help of the Clausius-Mossotti model. The variation of electronic polarizabilities with compressive stress has been derived by taking into account the distortion of ions, within the framework of the deformation dipole model. It has been observed that consideration of the variation of polarizabilities with compressive stress improves the agreement between theory and experiment. The photoelastic behaviour of MgO is predicted to be of the opposite nature to that of alkali halides in conformity with the experimental observations.
A technology similar to silicon-on-insulator is highly desirable for III-V electronics to support... more A technology similar to silicon-on-insulator is highly desirable for III-V electronics to support scaling for future generations. This letter reports the first realization of strained GaN quantum-well transistors embedded in unstrained AlN as the insulator. The molecular beam epitaxy (MBE)-grown heterostructure consisting of an ultrathin GaN channel buried in strain-free AIN barriers is favorable for scaling by the suppression of short-channel effects. Ohmic contacts are realized with MBE-regrown heavily Si-doped n+ GaN. For long-channel devices, a saturation drain current of ~0.7 A/mm at VGS = +3 V and a peak extrinsic transconductance of ~160 mS/mm around VGS = +1 V are measured at VDS = +10 V. No hysteresis is observed in the C-V measurement, indicating the high quality of all binary nitride heterostructures. The demonstrated device structure offers a high promise for high-frequency and high-power applications in the future. The strain-free barrier has the potential to enhance the reliability of GaN transistors.
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.13Al0... more Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.13Al0.83Ga0.04 N/AlN/GaN heterostructure on SiC substrate were fabricated. The 66-nm-long gate device shows a dc drain current density of 2.1 A/mm, a peak extrinsic transconductance of 548 mS/mm, and a record current gain cutoff frequency fT of 220 GHz for quaternary barrier GaN-based HEMTs, which is also among the highest fT for all GaN-based HEMTs. The large Lg ·fT product of 14.5 GHz ·μm with a gate-length-to-barrier-thickness aspect ratio of 5.8 indicates a high effective electron velocity of 0.9 ×107 cm/s, attributed to a high electron Hall mobility (1790 cm2/V ·s at an ns of 1.8 ×1013-2)-the highest reported in GaN-channel HEMTs with In-containing barriers. An intrinsic electron velocity of 1.7 ×107 cm/s, extracted from conventional Moll delay-time analysis, is comparable to that reported in the state-of-art AlGaN/GaN HEMTs.
Abstract Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spont... more Abstract Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al 2 O 3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the underlying nitride substrate. Through capacitance-voltage measurement on a series of samples of varying dielectric thicknesses, we find the ...
Abstract Indium gallium nitride nanowires show promise as being prime candidates for optical devi... more Abstract Indium gallium nitride nanowires show promise as being prime candidates for optical devices since they can be grown with band gaps spanning the visible spectra, while at the same time can be composed of stress free material. The goal of the work presented here was to obtain InGaN nanowires producing green emission at room temperature. Two growth recipes were found to yield InGaN nanowire growth on silicon substrates using plasma-assisted molecular beam epitaxy. At room temperature the photoluminescence ( ...
In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Elec... more In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Electroluminescence from AlGaN regions indicates that AlχGai.χN QWs and AlyGaι.yN barriers can now be used to obtain respectable emission intensities for deeper UV or higher energy photons. A number of advantages of N-face optoelectronic devices p-type polarization doping, and better electron and hole injection facilitated by the correct orientation of the polarization field were pointed out.
Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-e... more Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the metal/ n+-GaN resistance ( ~ 0.16 Ω·mm), the resistance induced by the interface between the regrown n+ GaN and HEMT channel is found to be 0.05-0.075 Ω·mm over the entire temperature window, indicating a minimal barrier for electron flow at the as-regrown interface. The quantum contact resistance theory suggests that the interface resistance can be further reduced to be <; 0.02 Ω·mm in GaN HEMTs.
Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar cr... more Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.
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