ABSTRACT A new technique for the directional solidification growth of multi-crystalline silicon (... more ABSTRACT A new technique for the directional solidification growth of multi-crystalline silicon (mc-Si) ingot was developed by GCL-POLY Energy Holdings Ltd. This technique is called as S2 and has been used recently for industrial production. The average conversion efficiency of the solar cells fabricated by S2 mc-Si wafers is increased by 0.62% compared with the traditional mc-Si solar cells using conventional solar cell processing. In order to understand the origin of the high cell performance, ensure the process reproducibility and further improve the technique, this paper analyzes the grain structures of the S2 mc-Si wafers by light microscopy and scanning electron microscopy supported with electron back scatter diffraction. Our analysis indicates that the increased performance of the S2 mc-Si solar cells is contributed to low dislocation density, uniform and highly oriented grains with high percentage of electrically inactive grain boundary ( grain boundary).
30th European Solid-State Device Research Conference, 2000
Abstract SOI single-hole transistors with various sizes have been fabricated by converting an aba... more Abstract SOI single-hole transistors with various sizes have been fabricated by converting an abacus bead wire to an island contacted to the source and the drain through two constrictions. Coulomb blockade and quantum confinement oscillations have been ...
In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100... more In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100) is investigated. After deposition in ultrahigh vacuum, the solid-state reaction between Er and Si is performed ex situ by rapid thermal annealing between 450 and 600 °C in a forming gas ambience with a 10 nm thick Ti capping layer to protect Er from oxidation. X-ray diffraction analyses have confirmed the formation of ErSi2−x for all annealing temperatures. The formed films are found to be free of pinholes or pits and present a sharp and smooth interface with the Si bulk substrate. The extracted Schottky barrier height (SBH) corresponds to the state-of-the-art value of 0.28 eV if the annealing temperature is lower than or equal to 500 °C. This result demonstrates the possibility to form low SBH ErSi2−x/n-Si contacts with a protective Ti cap. However, when the annealing temperature is set to a higher value, the SBH concomitantly rises. Based on our experiments, this SBH increase can be ...
This paper reports a simple fabrication process of Si “twin nano wires” based on As dopant effect... more This paper reports a simple fabrication process of Si “twin nano wires” based on As dopant effect which gives rise to a significant increase of the oxidation rate at the peak concentration of As. The processing procedures consist of As doping, deposition of silicon nitride layer, electron beam lithography, reactive ion etching, wet oxide and deposition of polysilicon. The resulting Si “twin nano wires” have a small top wire with a dimension of 10 nm and a triangular channel wire with a height of 250 nm. A possible application of the “twin nano wires” to a future single-electron memory device on silicon on insulator (SOI) wafer is also discussed.
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without... more The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent nonequilibrium Green’s function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.
Rapid, real-time detection of pathogenic microorganisms is an emerging evolving field of research... more Rapid, real-time detection of pathogenic microorganisms is an emerging evolving field of research, especially for microorganisms that pose a major threat to public health. Alumina covered interdigitated capacitive microsensors were previously designed in our laboratory for DNA hybridization electrical detection (LOD of 30 nM target DNA). The device is constructed with standard CMOS materials. We show here that when coated with an appropriate anti- Staphylococcus aureus monoclonal antibody (MoAb), this device also permits to specifically detect this bacteria. The binding of bacteria to the microsensors induce a significant capacitance shift that is proportional to the amount of immobilized bacteria, thus enabling a possible quantitative analysis.
Low-power and high-temperature sensors and MEMS designs based on bulk, SOI and IC compatible mate... more Low-power and high-temperature sensors and MEMS designs based on bulk, SOI and IC compatible materials and processes are presented here. Target markets are in general public sensors for UV, ozone, CO, liquids presence, e.g. in mobile devices. Or in health, sensors for the medical diagnosis (DNA, RNA, bacteria, viruses). Simple, low cost and low consumption devices are required in medical applications. In our laboratory aluminum oxide interdigitated capacitors have been developed and successfully tested on DNA hybridization test on HIV and cancer (TP-53), as well as on bacteria and humidity or condensation (integrated into a wireless breathing monitoring system), all of them showing comparable results to the state of the art using existing standard biological protocols procedures that open new opportunities for Medical Applications. For UV light based detections (UV Diode), that are ready for use, packaging must be customized. Customers are the kits fabricator to integrate our device...
ABSTRACT A new technique for the directional solidification growth of multi-crystalline silicon (... more ABSTRACT A new technique for the directional solidification growth of multi-crystalline silicon (mc-Si) ingot was developed by GCL-POLY Energy Holdings Ltd. This technique is called as S2 and has been used recently for industrial production. The average conversion efficiency of the solar cells fabricated by S2 mc-Si wafers is increased by 0.62% compared with the traditional mc-Si solar cells using conventional solar cell processing. In order to understand the origin of the high cell performance, ensure the process reproducibility and further improve the technique, this paper analyzes the grain structures of the S2 mc-Si wafers by light microscopy and scanning electron microscopy supported with electron back scatter diffraction. Our analysis indicates that the increased performance of the S2 mc-Si solar cells is contributed to low dislocation density, uniform and highly oriented grains with high percentage of electrically inactive grain boundary ( grain boundary).
30th European Solid-State Device Research Conference, 2000
Abstract SOI single-hole transistors with various sizes have been fabricated by converting an aba... more Abstract SOI single-hole transistors with various sizes have been fabricated by converting an abacus bead wire to an island contacted to the source and the drain through two constrictions. Coulomb blockade and quantum confinement oscillations have been ...
In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100... more In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100) is investigated. After deposition in ultrahigh vacuum, the solid-state reaction between Er and Si is performed ex situ by rapid thermal annealing between 450 and 600 °C in a forming gas ambience with a 10 nm thick Ti capping layer to protect Er from oxidation. X-ray diffraction analyses have confirmed the formation of ErSi2−x for all annealing temperatures. The formed films are found to be free of pinholes or pits and present a sharp and smooth interface with the Si bulk substrate. The extracted Schottky barrier height (SBH) corresponds to the state-of-the-art value of 0.28 eV if the annealing temperature is lower than or equal to 500 °C. This result demonstrates the possibility to form low SBH ErSi2−x/n-Si contacts with a protective Ti cap. However, when the annealing temperature is set to a higher value, the SBH concomitantly rises. Based on our experiments, this SBH increase can be ...
This paper reports a simple fabrication process of Si “twin nano wires” based on As dopant effect... more This paper reports a simple fabrication process of Si “twin nano wires” based on As dopant effect which gives rise to a significant increase of the oxidation rate at the peak concentration of As. The processing procedures consist of As doping, deposition of silicon nitride layer, electron beam lithography, reactive ion etching, wet oxide and deposition of polysilicon. The resulting Si “twin nano wires” have a small top wire with a dimension of 10 nm and a triangular channel wire with a height of 250 nm. A possible application of the “twin nano wires” to a future single-electron memory device on silicon on insulator (SOI) wafer is also discussed.
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without... more The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent nonequilibrium Green’s function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.
Rapid, real-time detection of pathogenic microorganisms is an emerging evolving field of research... more Rapid, real-time detection of pathogenic microorganisms is an emerging evolving field of research, especially for microorganisms that pose a major threat to public health. Alumina covered interdigitated capacitive microsensors were previously designed in our laboratory for DNA hybridization electrical detection (LOD of 30 nM target DNA). The device is constructed with standard CMOS materials. We show here that when coated with an appropriate anti- Staphylococcus aureus monoclonal antibody (MoAb), this device also permits to specifically detect this bacteria. The binding of bacteria to the microsensors induce a significant capacitance shift that is proportional to the amount of immobilized bacteria, thus enabling a possible quantitative analysis.
Low-power and high-temperature sensors and MEMS designs based on bulk, SOI and IC compatible mate... more Low-power and high-temperature sensors and MEMS designs based on bulk, SOI and IC compatible materials and processes are presented here. Target markets are in general public sensors for UV, ozone, CO, liquids presence, e.g. in mobile devices. Or in health, sensors for the medical diagnosis (DNA, RNA, bacteria, viruses). Simple, low cost and low consumption devices are required in medical applications. In our laboratory aluminum oxide interdigitated capacitors have been developed and successfully tested on DNA hybridization test on HIV and cancer (TP-53), as well as on bacteria and humidity or condensation (integrated into a wireless breathing monitoring system), all of them showing comparable results to the state of the art using existing standard biological protocols procedures that open new opportunities for Medical Applications. For UV light based detections (UV Diode), that are ready for use, packaging must be customized. Customers are the kits fabricator to integrate our device...
Uploads
Papers