Atomic migration and electronic switching of bi-stable centers in conducting filaments formed in ... more Atomic migration and electronic switching of bi-stable centers in conducting filaments formed in nanooxide based resistive random access memory (RRAM) cells are modeled and analyzed as competitive mechanisms determining their operation frequency. They are demonstrated to be mediated by the filament growth dynamics. Atomic migration is shown to be responsible for a slow change of the filament resistivity with typical switching times in the millisecond range. Fast switching with the shortest nanosecond delay can be achieved using bi-stable electronic centers in the filaments. Possible configurations of such centers are discussed.
2006 16th International Crimean Microwave and Telecommunication Technology, 2006
ABSTRACT The method of synthesis of the mesoscopic structures xerogel/porous anodic alumina (PAA)... more ABSTRACT The method of synthesis of the mesoscopic structures xerogel/porous anodic alumina (PAA), xerogel/opal, doped with erbium and other optically active lanthanides and their optical properties are considered
The electronic properties of grained nanocrystalline silicon (1 1 1) films were theoretically stu... more The electronic properties of grained nanocrystalline silicon (1 1 1) films were theoretically studied within the self-consistent semiempirical LCAO method. Grains in the films were found to provide a direct band gap and their interaction results in the gap reduction with respect to the one in the isolated grain. The gap value varied from 1.55 to 3.04 eV depending on
We have developed a novel technique providing fabrication of nanoporous silicon films on nonsilic... more We have developed a novel technique providing fabrication of nanoporous silicon films on nonsilicon substrates. Magnetron sputtering of an Al+Si composite target with subsequent selective etching off the aluminum from the deposited film were used to produce nanoporous silicon films on stainless steel substrates. These films were found to have a highly nanoporous skeleton formed by connected 20-200 nm silicon grains. They demonstrated an efficient Li accumulation/release during charging/discharging cycles combined with a high mechanical durability.
IOP Conference Series: Earth and Environmental Science
Low temperature technologies creating metals oxides are a promising solution for formation integr... more Low temperature technologies creating metals oxides are a promising solution for formation integral circuit elements. In this report the electric properties of zirconia (ZrO2) received by low temperature (∼ 400° C) UV stimulated plasma anodizing have been investigated. Zirconia is a potential high-k dielectric material with potential applications as agate insulator in transistors. This dielectric distinguished by good electric parameters. For this purpose, we used C-V characterization technic and calculate dielectric constant, flatband voltage, threshold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument Semiconductor Parameter Analyzer 4200, oxide thickness was measured by reflectometer – MprobeVis System.
Wearable electronic sensing devices are deemed to be a crucial technology of smart personal elect... more Wearable electronic sensing devices are deemed to be a crucial technology of smart personal electronics. Strain and pressure sensors, one of the most popular research directions in recent years, are the key components of smart and flexible electronics. Graphene, as an advanced nanomaterial, exerts pre-eminent characteristics including high electrical conductivity, excellent mechanical properties, and flexibility. The above advantages of graphene provide great potential for applications in mechatronics, robotics, automation, human-machine interaction, etc.: graphene with diverse structures and leverages, strain and pressure sensors with new functionalities. Herein, the recent progress in graphene-based strain and pressure sensors is presented. The sensing materials are classified into four structures including 0D fullerene, 1D fiber, 2D film, and 3D porous structures. Different structures of graphene-based strain and pressure sensors provide various properties and multifunctions in c...
Atomic migration and electronic switching of bi-stable centers in conducting filaments formed in ... more Atomic migration and electronic switching of bi-stable centers in conducting filaments formed in nanooxide based resistive random access memory (RRAM) cells are modeled and analyzed as competitive mechanisms determining their operation frequency. They are demonstrated to be mediated by the filament growth dynamics. Atomic migration is shown to be responsible for a slow change of the filament resistivity with typical switching times in the millisecond range. Fast switching with the shortest nanosecond delay can be achieved using bi-stable electronic centers in the filaments. Possible configurations of such centers are discussed.
2006 16th International Crimean Microwave and Telecommunication Technology, 2006
ABSTRACT The method of synthesis of the mesoscopic structures xerogel/porous anodic alumina (PAA)... more ABSTRACT The method of synthesis of the mesoscopic structures xerogel/porous anodic alumina (PAA), xerogel/opal, doped with erbium and other optically active lanthanides and their optical properties are considered
The electronic properties of grained nanocrystalline silicon (1 1 1) films were theoretically stu... more The electronic properties of grained nanocrystalline silicon (1 1 1) films were theoretically studied within the self-consistent semiempirical LCAO method. Grains in the films were found to provide a direct band gap and their interaction results in the gap reduction with respect to the one in the isolated grain. The gap value varied from 1.55 to 3.04 eV depending on
We have developed a novel technique providing fabrication of nanoporous silicon films on nonsilic... more We have developed a novel technique providing fabrication of nanoporous silicon films on nonsilicon substrates. Magnetron sputtering of an Al+Si composite target with subsequent selective etching off the aluminum from the deposited film were used to produce nanoporous silicon films on stainless steel substrates. These films were found to have a highly nanoporous skeleton formed by connected 20-200 nm silicon grains. They demonstrated an efficient Li accumulation/release during charging/discharging cycles combined with a high mechanical durability.
IOP Conference Series: Earth and Environmental Science
Low temperature technologies creating metals oxides are a promising solution for formation integr... more Low temperature technologies creating metals oxides are a promising solution for formation integral circuit elements. In this report the electric properties of zirconia (ZrO2) received by low temperature (∼ 400° C) UV stimulated plasma anodizing have been investigated. Zirconia is a potential high-k dielectric material with potential applications as agate insulator in transistors. This dielectric distinguished by good electric parameters. For this purpose, we used C-V characterization technic and calculate dielectric constant, flatband voltage, threshold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument Semiconductor Parameter Analyzer 4200, oxide thickness was measured by reflectometer – MprobeVis System.
Wearable electronic sensing devices are deemed to be a crucial technology of smart personal elect... more Wearable electronic sensing devices are deemed to be a crucial technology of smart personal electronics. Strain and pressure sensors, one of the most popular research directions in recent years, are the key components of smart and flexible electronics. Graphene, as an advanced nanomaterial, exerts pre-eminent characteristics including high electrical conductivity, excellent mechanical properties, and flexibility. The above advantages of graphene provide great potential for applications in mechatronics, robotics, automation, human-machine interaction, etc.: graphene with diverse structures and leverages, strain and pressure sensors with new functionalities. Herein, the recent progress in graphene-based strain and pressure sensors is presented. The sensing materials are classified into four structures including 0D fullerene, 1D fiber, 2D film, and 3D porous structures. Different structures of graphene-based strain and pressure sensors provide various properties and multifunctions in c...
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