Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, 1997
Publisher Summary This chapter deals with the simplest technique, that is, ellipsometry which all... more Publisher Summary This chapter deals with the simplest technique, that is, ellipsometry which allows determination of the thickness and the optical refractive index of the constituent sublayers of the materials. In particular, this can be used to evaluate the amorphous quality of the material versus implantation dose, annealing time, or both, and temperature. Moreover, the chapter provides excellent information about the optical permittivity of the semiconductor layers as a function of the disorder level. Throughout this chapter, emphasis has been placed on the need for appropriate optical models to interpret experimental data on defect annealing. Experimental works use a mixture of amorphous and crystalline materials to interpret measurements on damaged semiconductors. A few investigations report that by doing so we systematically overestimate the amount of point defects. Systematic and detailed study of point-defect annealing is one of the promising new areas of investigation. However, this can only be done by using complementary analytical methods, such as RBS channeling.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
ABSTRACT Ion implantation proved to be a universal technique for producing waveguides in most opt... more ABSTRACT Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.
ABSTRACT Spontaneous electroless etching of silicon surfaces with hydrofluoric acid and chemical ... more ABSTRACT Spontaneous electroless etching of silicon surfaces with hydrofluoric acid and chemical oxidant-based solutions is often referred to as “stain etching” due to the color change it imparts. The field is comprehensively reviewed with regard to the etching mechanisms and the range of chemical oxidants explored to date.
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, 1997
Publisher Summary This chapter deals with the simplest technique, that is, ellipsometry which all... more Publisher Summary This chapter deals with the simplest technique, that is, ellipsometry which allows determination of the thickness and the optical refractive index of the constituent sublayers of the materials. In particular, this can be used to evaluate the amorphous quality of the material versus implantation dose, annealing time, or both, and temperature. Moreover, the chapter provides excellent information about the optical permittivity of the semiconductor layers as a function of the disorder level. Throughout this chapter, emphasis has been placed on the need for appropriate optical models to interpret experimental data on defect annealing. Experimental works use a mixture of amorphous and crystalline materials to interpret measurements on damaged semiconductors. A few investigations report that by doing so we systematically overestimate the amount of point defects. Systematic and detailed study of point-defect annealing is one of the promising new areas of investigation. However, this can only be done by using complementary analytical methods, such as RBS channeling.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
ABSTRACT Ion implantation proved to be a universal technique for producing waveguides in most opt... more ABSTRACT Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.
ABSTRACT Spontaneous electroless etching of silicon surfaces with hydrofluoric acid and chemical ... more ABSTRACT Spontaneous electroless etching of silicon surfaces with hydrofluoric acid and chemical oxidant-based solutions is often referred to as “stain etching” due to the color change it imparts. The field is comprehensively reviewed with regard to the etching mechanisms and the range of chemical oxidants explored to date.
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