Low temperature quantised conductance effects in InSb/AlInSb heterostructures are reported. The o... more Low temperature quantised conductance effects in InSb/AlInSb heterostructures are reported. The one-dimensional confinement is provided by metal Schottky split-gate structures patterned directly onto the material surface. Extremely low Schottky barrier leakage is demonstrated for these devices, in part due to the air bridge gate arrangement implemented. Up to seven quantised energy subbands are discerned in the conductance of the devices
We have used a novel, simple technique based on bevel etching, to fabricate samples containing la... more We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n-i-p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrödinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K,
... The authors acknowledge the support of the Strategic Research Panel of the UK MoD and CL Jone... more ... The authors acknowledge the support of the Strategic Research Panel of the UK MoD and CL Jones, CD Maxey and NE Metcalfe of GEC Marconi Infrared Limited for fabrication of the HgxCdxTe heterostructures. British Crown Copyright (1995). References [1] T. Ashley and CT ...
The luminescent properties of single InSb quantum wells have been investigated as a function of t... more The luminescent properties of single InSb quantum wells have been investigated as a function of temperature and incident laser power. A large peak was observed in the photoluminescence, corresponding to emission from the quantum well, which moves to lower energy with increasing temperature and tracks the bulk InSb band gap with a constant energy up-shift of ~50 meV. The integrated
... R, Whitehouse, CF McCcnvilìe, AG CuElis, T. Ashley, SJ Courtney, and С. T. Elliott Roya! ... ... more ... R, Whitehouse, CF McCcnvilìe, AG CuElis, T. Ashley, SJ Courtney, and С. T. Elliott Roya! ... Detailed secondary-ion mass spectrometry measurements also demonstrate that there is no large-scale interdifiusion of constituent elements at the interface. ...
High-performance InSb diode junctions have been grown for the first time by molecular-beam epitax... more High-performance InSb diode junctions have been grown for the first time by molecular-beam epitaxy. Without any optimization of the device parameters, such as doping levels, the detectors exhibit a limiting D-asterisk(lambda p k) of 3 x 10 to the 12th cm-Hz exp 1/2/W. This permits BLIP operation in a background flux as low as 10 to the 13th photons/sq cm/s. When the ambient scene temperature is 295 K, for example, BLIP operation is obtained for cold shield apertures corresponding to f/numbers greater than 20.
ABSTRACT Using an FTIR-based photo-modulated transmission spectroscopic technique a red-shift in ... more ABSTRACT Using an FTIR-based photo-modulated transmission spectroscopic technique a red-shift in bandgap has been observed at room temperature for an InSb1-xNx ternary alloy, relative to binary InSb, and determined to be approximately around 16meV (10%), corresponding to an incorporated nitrogen concentration of 0.1%.
Low temperature quantised conductance effects in InSb/AlInSb heterostructures are reported. The o... more Low temperature quantised conductance effects in InSb/AlInSb heterostructures are reported. The one-dimensional confinement is provided by metal Schottky split-gate structures patterned directly onto the material surface. Extremely low Schottky barrier leakage is demonstrated for these devices, in part due to the air bridge gate arrangement implemented. Up to seven quantised energy subbands are discerned in the conductance of the devices
We have used a novel, simple technique based on bevel etching, to fabricate samples containing la... more We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n-i-p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrödinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K,
... The authors acknowledge the support of the Strategic Research Panel of the UK MoD and CL Jone... more ... The authors acknowledge the support of the Strategic Research Panel of the UK MoD and CL Jones, CD Maxey and NE Metcalfe of GEC Marconi Infrared Limited for fabrication of the HgxCdxTe heterostructures. British Crown Copyright (1995). References [1] T. Ashley and CT ...
The luminescent properties of single InSb quantum wells have been investigated as a function of t... more The luminescent properties of single InSb quantum wells have been investigated as a function of temperature and incident laser power. A large peak was observed in the photoluminescence, corresponding to emission from the quantum well, which moves to lower energy with increasing temperature and tracks the bulk InSb band gap with a constant energy up-shift of ~50 meV. The integrated
... R, Whitehouse, CF McCcnvilìe, AG CuElis, T. Ashley, SJ Courtney, and С. T. Elliott Roya! ... ... more ... R, Whitehouse, CF McCcnvilìe, AG CuElis, T. Ashley, SJ Courtney, and С. T. Elliott Roya! ... Detailed secondary-ion mass spectrometry measurements also demonstrate that there is no large-scale interdifiusion of constituent elements at the interface. ...
High-performance InSb diode junctions have been grown for the first time by molecular-beam epitax... more High-performance InSb diode junctions have been grown for the first time by molecular-beam epitaxy. Without any optimization of the device parameters, such as doping levels, the detectors exhibit a limiting D-asterisk(lambda p k) of 3 x 10 to the 12th cm-Hz exp 1/2/W. This permits BLIP operation in a background flux as low as 10 to the 13th photons/sq cm/s. When the ambient scene temperature is 295 K, for example, BLIP operation is obtained for cold shield apertures corresponding to f/numbers greater than 20.
ABSTRACT Using an FTIR-based photo-modulated transmission spectroscopic technique a red-shift in ... more ABSTRACT Using an FTIR-based photo-modulated transmission spectroscopic technique a red-shift in bandgap has been observed at room temperature for an InSb1-xNx ternary alloy, relative to binary InSb, and determined to be approximately around 16meV (10%), corresponding to an incorporated nitrogen concentration of 0.1%.
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