Taking into account the novel layered structure and unusual electronic properties of MoS2 and WS2... more Taking into account the novel layered structure and unusual electronic properties of MoS2 and WS2 on the side the lack of dangling bonds between these two components and donor-acceptor linkage effects, growth of the MoS2/WS2 vertical heterojunction film on the amorphous SiO2/Si substrate have created high demand. In this study, we reported the continuous, scalable, and vertical MoS2/WS2 heterostructure film by using a sputtering without a transfer step. The WS2 film was continuously grown on MoS2 and eventually led to the formation of the MoS2/WS2 vertical heterojunction film. Dozens of FETs fabricated on MoS2/WS2 continuous heterojunction film were created on the same substrate in a single lithographic fabrication step, allowing them to be commercialized and not only used in research applications. RAMAN spectra proved the formation of the MoS2/WS2 heterostructure film. In XPS measurements, it was shown that a separate MoS2 and WS2 layer was grown instead of the alloy structure. The...
Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate have leads to sign... more Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate have leads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work...
2015 23nd Signal Processing and Communications Applications Conference (SIU), 2015
In this study, it is aimed to produce microelectrodes which can be used in the detection of neuro... more In this study, it is aimed to produce microelectrodes which can be used in the detection of neurotransmitters that are related with brain disorders such as Parkinson, Epilepsy, and Schizophrenia and that exist in the central nervous system (CNS). A 4-channel, ceramic-based fabrication is performed towards this goal by using photolithographic methods. The time-current graphic response against the addition of H2O2 the produced microelectrode is analyzed in the calibration test. It is observed that the response is in stepwise form. In addition, limit of detection (LOD) of the produced microelectrodes and linearity values are shown to be within the desired ranges.
Taking into account the novel layered structure and unusual electronic properties of MoS2 and WS2... more Taking into account the novel layered structure and unusual electronic properties of MoS2 and WS2 on the side the lack of dangling bonds between these two components and donor-acceptor linkage effects, growth of the MoS2/WS2 vertical heterojunction film on the amorphous SiO2/Si substrate have created high demand. In this study, we reported the continuous, scalable, and vertical MoS2/WS2 heterostructure film by using a sputtering without a transfer step. The WS2 film was continuously grown on MoS2 and eventually led to the formation of the MoS2/WS2 vertical heterojunction film. Dozens of FETs fabricated on MoS2/WS2 continuous heterojunction film were created on the same substrate in a single lithographic fabrication step, allowing them to be commercialized and not only used in research applications. RAMAN spectra proved the formation of the MoS2/WS2 heterostructure film. In XPS measurements, it was shown that a separate MoS2 and WS2 layer was grown instead of the alloy structure. The...
Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate have leads to sign... more Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate have leads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work...
2015 23nd Signal Processing and Communications Applications Conference (SIU), 2015
In this study, it is aimed to produce microelectrodes which can be used in the detection of neuro... more In this study, it is aimed to produce microelectrodes which can be used in the detection of neurotransmitters that are related with brain disorders such as Parkinson, Epilepsy, and Schizophrenia and that exist in the central nervous system (CNS). A 4-channel, ceramic-based fabrication is performed towards this goal by using photolithographic methods. The time-current graphic response against the addition of H2O2 the produced microelectrode is analyzed in the calibration test. It is observed that the response is in stepwise form. In addition, limit of detection (LOD) of the produced microelectrodes and linearity values are shown to be within the desired ranges.
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