Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014
The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility tra... more The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility transistors (HEMTs) after 60Co γ-irradiation doses of 50, 300, 450, or 700 Gy were measured. The main effects on the HEMTs after irradiation were increases of both drain current and electron mobility. Compton electrons induced from the absorption of the γ-rays appear to generate donor type defects. Drain current dispersions of ∼5% were observed during gate lag measurements due to the formation of a virtual gate between the gate and drain resulting from the defects generated during γ-irradiation.
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