Photomask and Next-Generation Lithography Mask Technology XII, 2005
The Aerial Image Measurement System, AIMS, for 193nm lithography emulation is established as a st... more The Aerial Image Measurement System, AIMS, for 193nm lithography emulation is established as a standard for the rapid prediction of wafer printability for critical structures including dense patterns and defects or repairs on masks. The main benefit of AIMS is to save expensive image qualification consisting of test wafer exposures followed by wafer CD-SEM resist or wafer analysis. By adjustment
Metrology, Inspection, and Process Control for Microlithography XX, 2006
Immersion lithography offers the semiconductor industry an opportunity to extend the current ArF ... more Immersion lithography offers the semiconductor industry an opportunity to extend the current ArF processes to smaller nodes before switching to a shorter wavelength. The transition to immersion will require increased attention to the photomask along with new effects influencing the ...
The first Aerial Image Measurement System (AIMS™) (1) for 157 nm lithography worldwide has been b... more The first Aerial Image Measurement System (AIMS™) (1) for 157 nm lithography worldwide has been brought into operation successfully. Due to the wavelength in the vacuum ultraviolet (VUV) spectrum major efforts had been required for the illumination and imaging part of the optical components as well as for the purging of the system which will be discussed. The system's performance will be demonstrated by AIMS™ measurements at 157 nm wavelength on binary chrome photomasks. Several through focus series have been measured in order to evaluate transmission, linewidth (CD) results, Bossung curves and to calculate the exposure-defocus windows. Detailed results of short-term and long-term CD repeatability measurements are discussed which prove the usage of the system for mask evaluation for 157nm lithography. Measurements of mask structures with feature sizes at mask level of 240 nm will be presented and discussed.
Proceedings of Spie the International Society For Optical Engineering, Dec 1, 2003
The objective of this paper is to assess how variations of the chief ray angle of the illuminatio... more The objective of this paper is to assess how variations of the chief ray angle of the illumination light incident on an EUV multilayer mask as well as the light bandwidth affect the performance of an AIMS EUV tool with respect to CD measurement and defect evaluation. To this end EUV images were simulated with an EUV lithography simulator developed by the Fraunhofer Institute IISB. The simulations were performed for a multilayer mask with a buried defect under an isolated line. The specifics of the AIMS EUV were taken into account by a superposition of aerial images obtained for different wavelengths. The presentation discusses the simulations and their results.
Storage and Retrieval for Image and Video Databases, 2000
With decreasing structure sizes on masks also the acceptable CD variation corridor for printing o... more With decreasing structure sizes on masks also the acceptable CD variation corridor for printing on the wafer and therefore, the maximum allowed defect size is decreasing. This has not only implications to the accuracy and repeatability of front-end processes such as writers, etchers, etc. but also challenges defect inspection and qualification. Defect qualification is usually done by an AIMSTM tool
Photomask and Next-Generation Lithography Mask Technology XII, 2005
The Aerial Image Measurement System, AIMS, for 193nm lithography emulation is established as a st... more The Aerial Image Measurement System, AIMS, for 193nm lithography emulation is established as a standard for the rapid prediction of wafer printability for critical structures including dense patterns and defects or repairs on masks. The main benefit of AIMS is to save expensive image qualification consisting of test wafer exposures followed by wafer CD-SEM resist or wafer analysis. By adjustment
Metrology, Inspection, and Process Control for Microlithography XX, 2006
Immersion lithography offers the semiconductor industry an opportunity to extend the current ArF ... more Immersion lithography offers the semiconductor industry an opportunity to extend the current ArF processes to smaller nodes before switching to a shorter wavelength. The transition to immersion will require increased attention to the photomask along with new effects influencing the ...
The first Aerial Image Measurement System (AIMS™) (1) for 157 nm lithography worldwide has been b... more The first Aerial Image Measurement System (AIMS™) (1) for 157 nm lithography worldwide has been brought into operation successfully. Due to the wavelength in the vacuum ultraviolet (VUV) spectrum major efforts had been required for the illumination and imaging part of the optical components as well as for the purging of the system which will be discussed. The system's performance will be demonstrated by AIMS™ measurements at 157 nm wavelength on binary chrome photomasks. Several through focus series have been measured in order to evaluate transmission, linewidth (CD) results, Bossung curves and to calculate the exposure-defocus windows. Detailed results of short-term and long-term CD repeatability measurements are discussed which prove the usage of the system for mask evaluation for 157nm lithography. Measurements of mask structures with feature sizes at mask level of 240 nm will be presented and discussed.
Proceedings of Spie the International Society For Optical Engineering, Dec 1, 2003
The objective of this paper is to assess how variations of the chief ray angle of the illuminatio... more The objective of this paper is to assess how variations of the chief ray angle of the illumination light incident on an EUV multilayer mask as well as the light bandwidth affect the performance of an AIMS EUV tool with respect to CD measurement and defect evaluation. To this end EUV images were simulated with an EUV lithography simulator developed by the Fraunhofer Institute IISB. The simulations were performed for a multilayer mask with a buried defect under an isolated line. The specifics of the AIMS EUV were taken into account by a superposition of aerial images obtained for different wavelengths. The presentation discusses the simulations and their results.
Storage and Retrieval for Image and Video Databases, 2000
With decreasing structure sizes on masks also the acceptable CD variation corridor for printing o... more With decreasing structure sizes on masks also the acceptable CD variation corridor for printing on the wafer and therefore, the maximum allowed defect size is decreasing. This has not only implications to the accuracy and repeatability of front-end processes such as writers, etchers, etc. but also challenges defect inspection and qualification. Defect qualification is usually done by an AIMSTM tool
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Papers by Axel Zibold