I. INTRODUCTION. The first reported measurements of the soft error upset. (SEU) susceptibility of SOI FinFETs are shown. The SOI.

May 26, 2015 · Measurements of the soft error upset cross section for SOI FinFET SRAMs are compared to earlier generation PDSOI SRAMs, with the FinFET ...

Higher tensile channel stress can be achieved, after the transistor structure attains mechanical equilibrium once again after spacer removal. This stress ...

Bibliographic details on SOI FinFET soft error upset susceptibility and analysis.

This paper presents a comprehensive analysis of radiation-induced soft errors of SRAMs designed in SOI FinFET technology. For this purpose, we propose a ...

Jun 1, 2021 · This paper proposes to investigate the impact of ionizing particles on the reliability of FinFET-based SRAMs in the presence of weak resistive defects.

ABSTRACT. This paper presents a comprehensive analysis of radiation-induced soft errors of SRAMs designed in SOI FinFET technology. For.

SOI FinFET soft error upset susceptibility and analysis. Phil Oldiges; Ken Rodbell; et al. 2015; IRPS 2015. A collective relaxation model for resistance drift ...

This article provides a comprehensive survey of various designs of SRAM using FinFET. It offers a comparative analysis of FinFET technology, power consumption, ...

ABSTRACT. This paper presents a comprehensive analysis of radiation-induced soft errors of SRAMs designed in SOI FinFET technology. For.