Kiyomi Naruke was born in Hokkaido, Japan, in 1958. He received the B.S. degree in electrical engineering from University of Electro-Communications, Tokyo, ...

List of computer science publications by Kiyomi Naruke.

K. Naruke's 13 research works with 584 citations, including: A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and ...

Kiyomi Naruke was born in Hokkaido, Japan, on. March 5 , 1958. He received the B.S. degree in communication engineering from the University of Electro ...

No information is available for this page. · Learn why

Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si ; Hiroshi Ishiwara ; Kiyomi Naruke ; Seijiro Furukawa.

Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy, Hiroshi Ishiwara, Kiyomi Naruke, Seijiro Furukawa.

Patent applications and USPTO patent grants for NARUKE; Kiyomi.The latest application filed is for "memory device and manufacturing method of memory device".

Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness · K. Naruke, S. Taguchi, M. Wada · Published in Technical Digest… 11 December ...