runtimeco
diff --git a/‎hw/mcu/atmel/samd21xx/src/hal_flash.c
Lines changed: 46 additions & 42 deletions b/‎hw/mcu/atmel/samd21xx/src/hal_flash.c
Lines changed: 46 additions & 42 deletions
@@ -38,12 +38,15 @@
 
 #define SAMD21_FLASH_PAGES_PER_SECTOR   (SAMD21_FLASH_PAGES_PER_ROW*SAMD21_FLASH_ROWS_PER_SECTOR)
 
-static int samd21_flash_read(uint32_t address, void *dst, uint32_t num_bytes);
-static int samd21_flash_write(uint32_t address, const void *src,
-  uint32_t num_bytes);
-static int samd21_flash_erase_sector(uint32_t sector_address);
-static int samd21_flash_sector_info(int idx, uint32_t *addr, uint32_t *sz);
-static int samd21_flash_init(void);
+static int samd21_flash_read(const struct hal_flash *dev, uint32_t address,
+        void *dst, uint32_t num_bytes);
+static int samd21_flash_write(const struct hal_flash *dev, uint32_t address,
+        const void *src, uint32_t num_bytes);
+static int samd21_flash_erase_sector(const struct hal_flash *dev,
+        uint32_t sector_address);
+static int samd21_flash_sector_info(const struct hal_flash *dev, int idx,
+        uint32_t *addr, uint32_t *sz);
+static int samd21_flash_init(const struct hal_flash *dev);
 
 static const struct hal_flash_funcs samd21_flash_funcs = {
     .hff_read = samd21_flash_read,
@@ -59,51 +62,53 @@ struct hal_flash samd21_flash_dev = {
 };
 
 static int
-samd21_flash_read(uint32_t address, void *dst, uint32_t num_bytes)
+samd21_flash_read(const struct hal_flash *dev, uint32_t address,
+        void *dst, uint32_t num_bytes)
 {
     int base_address;
     int offset;
     struct nvm_parameters params;
     uint8_t page_buffer[64];
     uint8_t *pdst = dst;
-    
+
     /* make sure this fits into our stack buffer  */
-    nvm_get_parameters(&params);      
+    nvm_get_parameters(&params);
     assert(params.page_size <= sizeof(page_buffer));
-    
+
     /* get the page address (this is not a sector, there are 4 pages per
      * row */
-    while(num_bytes) {   
+    while(num_bytes) {
         int read_len;
-        
+
         base_address = address & ~(params.page_size - 1);
-        
+
         offset = address - base_address;
         read_len = params.page_size - offset;
-        
+
         if(read_len > num_bytes) {
             read_len = num_bytes;
         }
 
-        if(nvm_read_buffer(base_address, page_buffer, params.page_size) 
+        if(nvm_read_buffer(base_address, page_buffer, params.page_size)
                         != STATUS_OK) {
             return -1;
         }
-        
+
         /* move the pointers since this is a sure thing now */
         num_bytes -= read_len;
-        address += read_len;     
+        address += read_len;
 
         /* copy it into the page buffer */
         while(read_len--) {
              *pdst++ = page_buffer[offset++];
-        }                              
-    }    
+        }
+    }
     return 0;
 }
 
 static int
-samd21_flash_write(uint32_t address, const void *src, uint32_t len)
+samd21_flash_write(const struct hal_flash *dev, uint32_t address,
+        const void *src, uint32_t len)
 {
     int base_address;
     int offset;
@@ -162,19 +167,19 @@ samd21_flash_write(uint32_t address, const void *src, uint32_t len)
 }
 
 static int
-samd21_flash_erase_sector(uint32_t sector_address)
+samd21_flash_erase_sector(const struct hal_flash *dev, uint32_t sector_address)
 {
-    struct nvm_parameters params;    
+    struct nvm_parameters params;
     int rc;
     int i;
 
-    nvm_get_parameters(&params);    
-    
+    nvm_get_parameters(&params);
+
     /* erase all rows in the sector */
     for(i = 0; i < SAMD21_FLASH_ROWS_PER_SECTOR; i++) {
-        uint32_t row_address = sector_address + 
+        uint32_t row_address = sector_address +
                 i*SAMD21_FLASH_PAGES_PER_ROW*params.page_size;
-        rc = nvm_erase_row(row_address);    
+        rc = nvm_erase_row(row_address);
         if(rc != STATUS_OK) {
             return -1;
         }
@@ -184,53 +189,52 @@ samd21_flash_erase_sector(uint32_t sector_address)
 
 /* samd21 flash always starts as 0x000000 */
 static int
-samd21_flash_sector_info(int idx, uint32_t *addr, uint32_t *sz)
+samd21_flash_sector_info(const struct hal_flash *dev, int idx,
+        uint32_t *addr, uint32_t *sz)
 {
     struct nvm_parameters params;
     int sector_size;
     int sector_cnt;
-        
+
     nvm_get_parameters(&params);
     sector_cnt = params.nvm_number_of_pages/SAMD21_FLASH_PAGES_PER_SECTOR;
     sector_size = params.page_size*SAMD21_FLASH_PAGES_PER_SECTOR;
-    
+
     if((idx >= sector_cnt) || (idx < 0)){
         return -1;
     }
-    
+
     *sz = sector_size;
-    *addr = idx * sector_size + SAMD21_FLASH_START_ADDR; 
+    *addr = idx * sector_size + SAMD21_FLASH_START_ADDR;
     return 0;
 }
 
 static int
-samd21_flash_init(void)
+samd21_flash_init(const struct hal_flash *dev)
 {
     int rc;
     struct nvm_config cfg;
     struct nvm_parameters params;
     nvm_get_config_defaults(&cfg);
-    
+
     cfg.manual_page_write = false;
     rc = nvm_set_config(&cfg);
     if(rc != STATUS_OK) {
         return -1;
     }
-    
-    nvm_get_parameters(&params);    
 
-    /* the samd21 flash doesn't use sector terminology. They use Row and 
+    nvm_get_parameters(&params);
+
+    /* the samd21 flash doesn't use sector terminology. They use Row and
      * page.  A row contains 4 pages. Each pages is a fixed size.  You can
-     * only erase based on row. Here I will map the rows to sectors and 
-     * deal with pages inside this driver.   */    
+     * only erase based on row. Here I will map the rows to sectors and
+     * deal with pages inside this driver.   */
     samd21_flash_dev.hf_itf = &samd21_flash_funcs;
     samd21_flash_dev.hf_base_addr = SAMD21_FLASH_START_ADDR;
     samd21_flash_dev.hf_size = params.nvm_number_of_pages * params.page_size;
-    samd21_flash_dev.hf_sector_cnt = 
+    samd21_flash_dev.hf_sector_cnt =
             params.nvm_number_of_pages/SAMD21_FLASH_PAGES_PER_SECTOR;
     samd21_flash_dev.hf_align = 1;
-    
+
     return 0;
 }
-
-