


default search action
"A 0.094um2 high density and aging resilient 8T SRAM with 14nm ..."
Kyung-Hoae Koo et al. (2015)
- Kyung-Hoae Koo, Liqiong Wei, John Keane, Uddalak Bhattacharya, Eric A. Karl, Kevin Zhang:
A 0.094um2 high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist. VLSIC 2015: 266-

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.