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Yoon-Jong Song

Yoonjong Song

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2020 – today

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2024
[c5]
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Joosung Oh, Jaehyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Honghyun Kim, Baeseong Kwon, DongKyu Lee, Minkwan Kim, Seungmo Noh, Jongmin Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, Kwangseok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Tae-Young Lee, Kyungtae Nam, Minkwon Cho, Boyoung Seo, Shinhee Han, Yoonjong Song, Kangho Lee, Ja-Hum Ku:
14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles. VLSI Technology and Circuits 2024: 1-2
2021
[c4]
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Shinhee Han, Junghyuk Lee, Kiseok Suh, Kyungtae Nam, Daeeun Jeong, Sechung Oh, Sohee Hwang, Yongsung Ji, Kilho Lee, Kangho Lee, Yoonjong Song, Yeongki Hong, Gitae Jeong:
Reliability of STT-MRAM for various embedded applications. IRPS 2021: 1-5
2020
[c3]
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Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee:
Reliability of Industrial grade Embedded-STT-MRAM. IRPS 2020: 1-3
[c2]
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El Mehdi Boujamaa, Samsudeen Mohamed Ali, Steve Ngueya Wandji, Alexandra Gourio, Suk-Soo Pyo, Gwanhyeob Koh, Yoonjong Song, Taejoong Song, Jongwook Kye, Jean-Christophe Vial, Andrew Sowden, Manuj Rathor, Cyrille Dray:
A 14.7Mb/mm² 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference. VLSI Circuits 2020: 1-2

2010 – 2019

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2013
[j5]
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Yoon-Jong Song, Gitae Jeong, In-Gyu Baek, Jungdal Choi:
What Lies Ahead for Resistance-Based Memory Technologies? Computer 46(8): 30-36 (2013)
2011
[c1]
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Byeungchul Kim, Yoon-Jong Song, Sujin Ahn, Younseon Kang, Hoon Jeong, Dongho Ahn, Seokwoo Nam, Gitae Jeong, Chilhee Chung:
Current status and future prospect of Phase Change Memory. ASICON 2011: 279-282

2000 – 2009

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2005
[j4]
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Yoon-Jong Song, Heung-Jin Joo, Seung-Kuk Kang, Hyun-Ho Kim, Jung-Hoon Park, Y. M. Kang, E. Y. Kang, Sung-Young Lee, Kinam Kim:
Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. Microelectron. Reliab. 45(7-8): 1150-1153 (2005)
2003
[j3]
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Kinam Kim, Yoon-Jong Song:
Integration technology for ferroelectric memory devices. Microelectron. Reliab. 43(3): 385-398 (2003)
2002
[j2]
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Mun-Kyu Choi, Byung-Gil Jeon, Nakwon Jang, Byung-Jun Min, Yoon-Jong Song, Sung-Yung Lee, Hyun-Ho Kim, Dong-Jin Jung, Heung-Jin Joo, Kinam Kim:
A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme. IEEE J. Solid State Circuits 37(11): 1472-1478 (2002)
2000
[j1]
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Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim:
A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit. IEEE J. Solid State Circuits 35(11): 1690-1694 (2000)

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