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ORCIDDaisaburo Takashima
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2010 – 2019
- 2019
[j17]Daisaburo Takashima
, Masato Endo, Kazuhiro Shimazaki, Manabu Sai, Masaaki Tanino:
A 7T-SRAM With Data-Write Technique by Capacitive Coupling. IEEE J. Solid State Circuits 54(2): 596-605 (2019)- 2015
- [j16]Ryu Ogiwara, Daisaburo Takashima, Sumiko M. Doumae, Shinichiro Shiratake, Ryosuke Takizawa, Hidehiro Shiga:
Highly Reliable Reference Bitline Bias Designs for 64 Mb and 128 Mb Chain FeRAMs. IEEE J. Solid State Circuits 50(5): 1324-1331 (2015) - [c7]Daisaburo Takashima, Masato Endo, Kazuhiro Shimazaki, Manabu Sai, Masaaki Tanino:
A 7T-SRAM with data-write technique by capacitive coupling. A-SSCC 2015: 1-4 - 2012
- [j15]Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii:
An Embedded DRAM Technology for High-Performance NAND Flash Memories. IEEE J. Solid State Circuits 47(2): 536-546 (2012) - [c6]Joo-Sun Choi, Daisaburo Takashima:
Session 2 overview: High-bandwidth DRAM & PRAM: Memory subcommittee. ISSCC 2012: 36-37 - 2011
- [j14]Daisaburo Takashima, Yasushi Nagadomi, Kosuke Hatsuda, Yohji Watanabe, Shuso Fujii:
A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance. IEEE J. Solid State Circuits 46(2): 530-536 (2011) - [j13]Daisaburo Takashima, Yasushi Nagadomi, Tohru Ozaki:
A 100 MHz Ladder FeRAM Design With Capacitance-Coupled-Bitline (CCB) Cell. IEEE J. Solid State Circuits 46(3): 681-689 (2011) - [j12]Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama:
A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs. IEEE J. Solid State Circuits 46(9): 2171-2179 (2011) - [c5]Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii:
An embedded DRAM technology for high-performance NAND flash memories. ISSCC 2011: 504-505 - [c4]Nicky Lu, Leland Chang, Daisaburo Takashima:
Future system and memory architectures: Transformations by technology and applications. ISSCC 2011: 530 - 2010
- [j11]Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama:
A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes. IEEE J. Solid State Circuits 45(1): 142-152 (2010) - [j10]Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii:
A 64-Mb Chain FeRAM With Quad BL Architecture and 200 MB/s Burst Mode. IEEE Trans. Very Large Scale Integr. Syst. 18(12): 1745-1752 (2010) - [c3]Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama:
A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM. ISSCC 2010: 262-263
2000 – 2009
- 2009
- [c2]Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama:
A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. ISSCC 2009: 464-465 - 2006
- [c1]Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii:
A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode. ISSCC 2006: 459-466 - 2003
- [j9]Shinichiro Shiratake, Tadashi Miyakawa, Yoshiaki Takeuchi, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Kohei Oikawa, Tohru Ozaki, Iwao Kunishima, Koji Yamakawa, Shigeki Sugimoto, Daisaburo Takashima, Hans-Oliver Joachim, Norbert Rehm, Joerg Wohlfahrt, Nicolas Nagel, Gerhard Beitel, Michael Jacob, Thomas Roehr:
A 32-Mb chain FeRAM with segment/stitch array architecture. IEEE J. Solid State Circuits 38(11): 1911-1919 (2003) - 2002
- [j8]Daisaburo Takashima, Hiroaki Nakano:
A cell transistor scalable DRAM array architecture. IEEE J. Solid State Circuits 37(5): 587-591 (2002) - 2001
- [j7]Daisaburo Takashima, Yoshiaki Takeuchi, Tadashi Miyakawa, Yasuo Itoh, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Sumiko Mano Doumae, Tohru Ozaki, Hiroyuki Kanaya, Koji Yamakawa, Iwao Kunishima, Yukihito Oowaki:
A 76-mm2 8-Mb chain ferroelectric memory. IEEE J. Solid State Circuits 36(11): 1713-1720 (2001)
1990 – 1999
- 1999
- [j6]Daisaburo Takashima, Susumu Shuto, Iwao Kunishima, Hiroyuki Takenaka, Yukihito Oowaki, Shin'ichi Tanaka:
A sub-40-ns chain FRAM architecture with 7-ns cell-plate-line drive. IEEE J. Solid State Circuits 34(11): 1557-1563 (1999) - 1998
- [j5]Daisaburo Takashima, Yukihito Oowaki, Shigeyoshi Watanabe, Kazunori Ohuchi:
Noise suppression scheme for gigabit-scale and gigabyte/s data-rate LSI's. IEEE J. Solid State Circuits 33(2): 260-267 (1998) - [j4]Daisaburo Takashima, Iwao Kunishima:
High-density chain ferroelectric random access memory (chain FRAM). IEEE J. Solid State Circuits 33(5): 787-792 (1998) - 1997
- [j3]Daisaburo Takashima, Yukihito Oowaki:
A novel power-off mode for a battery-backup DRAM. IEEE J. Solid State Circuits 32(1): 86-91 (1997) - 1994
- [j2]Daisaburo Takashima, Shigeyoshi Watanabe, Hiroalu Nakano, Yukihito Oowaki, Kazunori Ohuchi, Hiroyuki Tango:
Standby/active mode logic for sub-1-V operating ULSI memory. IEEE J. Solid State Circuits 29(4): 441-447 (1994) - [j1]Daisaburo Takashima, Shigeyoshi Watanabe, Hiroaki Nakano, Yukihito Oowaki, Kazunori Ohuchi:
Open/folded bit-line arrangement for ultra-high-density DRAM's. IEEE J. Solid State Circuits 29(4): 539-542 (1994)
Coauthor Index
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