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ORCIDRobin Degraeve
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2020 – today
- 2024
[c27]Yuanyang Guo, Robin Degraeve, Philippe Roussel, Ben Kaczer, Erik Bury, Ingrid Verbauwhede:
Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. ICANN (10) 2024: 156-167- [c26]Y. Guo, Robin Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
:
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS 2024: 1-7 - [c25]Anirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Andrea Vici, Clement Merckling:
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. IRPS 2024: 1-7 - [c24]Andrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco:
SILC and TDDB reliability of novel low thermal budget RMG gate stacks. IRPS 2024: 1-6 - [c23]Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer:
Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS 2024: 4 - [c22]Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar:
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. IRPS 2024: 7 - 2023
- [j13]David Coenen, Herman Oprins, Robin Degraeve, Ingrid De Wolf:
Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(7): 2264-2275 (2023) - [c21]Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer:
Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS 2023: 1-9 - [c20]Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer:
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS 2023: 1-6 - [c19]Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf:
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS 2023: 1-7 - 2022
- [c18]J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6 - [c17]Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve:
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS 2022: 1-7 - [c16]Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf:
Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS 2022: 10 - [c15]Andrea Vici, Robin Degraeve, João Pedro Bastos, Philippe Roussel, Ingrid De Wolf:
Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks. IRPS 2022: 27-1 - [c14]Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar:
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits 2022: 312-313 - [c13]Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt:
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits 2022: 340-342 - 2021
- [c12]Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar:
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW 2021: 1-4 - [c11]Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar:
Modeling and spectroscopy of ovonic threshold switching defects. IRPS 2021: 1-5 - [c10]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken:
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS 2021: 1-7
2010 – 2019
- 2019
- [j12]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede:
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits 54(10): 2765-2776 (2019) - [c9]Jonas Doevenspeck, Robin Degraeve, Andrea Fantini, Peter Debacker, Diederik Verkest, Rudy Lauwereins, Wim Dehaene:
Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications. IRPS 2019: 1-6 - 2018
- [j11]Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018(1): 98-117 (2018) - [c8]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede:
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC 2018: 157-160 - [c7]Jonas Doevenspeck, Robin Degraeve, Stefan Cosemans, Philippe Roussel, Bram-Ernst Verhoef, Rudy Lauwereins, Wim Dehaene:
Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications. ESSDERC 2018: 62-65 - [c6]Ana Lebanov, Andrea Fantini, Robin Degraeve, Manoj Nag, Myriam Willegems, Steve Smout, Soeren Steudel, Jan Genoe, Paul Heremans, Kris Myny:
Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate. ESSDERC 2018: 66-69 - [c5]Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar:
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC 2018: 146-149 - [c4]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS 2018: 2-1 - [c3]Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt:
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS 2018: 6 - 2015
- [c2]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c1]C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak:
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC 2015: 262-265 - 2014
- [j10]Baojun Tang, Kris Croes, Yohan Barbarin, Yunqi Wang, Robin Degraeve, Yunlong Li, Maria Toledano-Luque, Thomas Kauerauf, Jürgen Bömmels, Zsolt Tökei, Ingrid De Wolf:
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability. Microelectron. Reliab. 54(9-10): 1675-1679 (2014)
2000 – 2009
- 2007
- [j9]Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt:
Distribution and generation of traps in SiO2/Al2O3 gate stacks. Microelectron. Reliab. 47(4-5): 525-527 (2007) - [j8]Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken:
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47(4-5): 559-566 (2007) - 2006
- [j7]Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46(5-6): 702-712 (2006) - 2005
- [j6]J. Pétry, Wilfried Vandervorst, Luigi Pantisano, Robin Degraeve:
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. Microelectron. Reliab. 45(5-6): 815-818 (2005) - [j5]Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. Microelectron. Reliab. 45(5-6): 869-874 (2005) - 2003
- [j4]Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen:
A new method for the analysis of high-resolution SILC data. Microelectron. Reliab. 43(9-11): 1483-1488 (2003) - 2002
- [j3]Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. 42(4-5): 555-564 (2002) - [j2]Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages. Microelectron. Reliab. 42(9-11): 1485-1489 (2002)
1990 – 1999
- 1999
- [j1]Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43(3): 339-350 (1999)
Coauthor Index
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last updated on 2024-10-07 21:18 CEST by the dblp team
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