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Kenji Shiraishi
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2010 – 2019
- 2018
- [j10]Keita Yamaguchi, Hiroki Shirakawa, Kenji Shiraishi:
Atomistic study of SiN based ReRAM with high program/erase cycle endurance. IEICE Electron. Express 15(23): 20180868 (2018) - [i1]Bertrand Travacca, Greg Rybka, Kenji Shiraishi:
Market based embedded Real Time Operation for Distributed Resources and Flexibility. CoRR abs/1802.08929 (2018) - 2017
- [j9]Hiroki Shirakawa, Keita Yamaguchi, Masaaki Araidai, Katsumasa Kamiya, Kenji Shiraishi:
Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories. IEICE Trans. Electron. 100-C(10): 928-933 (2017) - 2015
- [j8]Takeki Ninomiya, Zhiqiang Wei, Shinichi Yoneda, Kenji Shiraishi:
Theoretical and Experimental Approaches to Select Resistive Switching Material. IEICE Trans. Electron. 98-C(1): 62-64 (2015) - 2014
- [c1]Blanka Magyari-Köpe, Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, Moon Young Yang, Kenji Shiraishi:
Ab initio modeling of resistive switching mechanism in binary metal oxides. ISCAS 2014: 2021-2024 - 2013
- [j7]Teruo Suzuki, Kenji Shiraishi:
Examination of short calibration problem of Transmission Line Pulse. IEICE Electron. Express 10(5): 20130029 (2013) - 2011
- [j6]Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet:
Si nanowire FET and its modeling. Sci. China Inf. Sci. 54(5): 1004-1011 (2011) - [j5]Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi:
An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory. IEICE Trans. Electron. 94-C(5): 693-698 (2011) - [j4]Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh:
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor. IEICE Trans. Electron. 94-C(5): 730-736 (2011) - 2010
- [j3]Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi:
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot. IEICE Trans. Electron. 93-C(5): 563-568 (2010) - [j2]Jun-ichi Iwata, Daisuke Takahashi, Atsushi Oshiyama, Taisuke Boku, Kenji Shiraishi, Susumu Okada, Kazuhiro Yabana:
A massively-parallel electronic-structure calculations based on real-space density functional theory. J. Comput. Phys. 229(6): 2339-2363 (2010)
2000 – 2009
- 2007
- [j1]Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi:
Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films. IEICE Trans. Electron. 90-C(5): 955-961 (2007)
Coauthor Index
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