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Matteo Borga
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2020 – today
- 2024
- [c11]M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6 - 2023
- [c10]Davide Favero
, A. Cavaliere, Carlo De Santi
, Matteo Borga
, W. Gonçalez Filho, Karen Geens
, Benoit Bakeroot
, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - 2022
- [c9]M. Millesimo, Benoit Bakeroot
, Matteo Borga
, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10 - [c8]Davide Favero
, Carlo De Santi
, Kalparupa Mukherjee, Karen Geens
, Matteo Borga
, Benoit Bakeroot
, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - [c7]Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga
, Stefaan Decoutere, Andrea Neviani:
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. PRIME 2022: 273-276 - 2021
- [c6]Elena Fabris
, Matteo Borga
, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
:
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS 2021: 1-8 - 2020
- [c5]Kalparupa Mukherjee, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini, Shuzhen You, Karen Geens
, Matteo Borga, Benoit Bakeroot
, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c4]Eleonora Canato, Fabrizio Masin, Matteo Borga
, Enrico Zanoni
, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens:
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS 2019: 1-6 - [c3]Eric E. Fabris, Matteo Meneghini, Carlo De Santi
, Matteo Borga
, Gaudenzio Meneghesso, Enrico Zanoni
, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda
:
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS 2019: 1-6 - [c2]Maria Ruzzarin
, Matteo Borga
, Enrico Zanoni
, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
:
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS 2019: 1-5 - [c1]Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
, Andrea Natale Tallarico
, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga
, Elena Fabris
, Matteo Meneghini, Enrico Zanoni
, Gaudenzio Meneghesso, Juraj Priesol
, Alexander Satka
:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [j1]Matteo Borga
, Matteo Meneghini
, Steve Stoffels
, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni
, Gaudenzio Meneghesso:
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. 88-90: 584-588 (2018)
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last updated on 2024-08-07 21:35 CEST by the dblp team
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