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ORCIDPeide D. Ye
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- affiliation: Purdue University, West Lafayette, USA
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2020 – today
- 2024
[c19]Sumi Lee, Chang Niu, Yizhi Zhang, Haiyan Wang, Peide D. Ye:
Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO. VLSI Technology and Circuits 2024: 1-2- [c18]Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong, Peide D. Ye:
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2.V-1·s-1Using HZO-Based Higher-k Linear Dielectric. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c17]Chunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, Peide D. Ye, Sumeet Kumar Gupta:
FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. DRC 2023: 1-2 - [c16]Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye:
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. VLSI Technology and Circuits 2023: 1-2 - [c15]Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye:
First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. VLSI Technology and Circuits 2023: 1-2 - [c14]Dongqi Zheng, Adam Charnas, Jian-Yu Lin
, Jackson Anderson, Dana Weinstein, Peide D. Ye:
Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c13]Adam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye:
Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure. DRC 2022: 1-2 - [c12]Zehao Lin, Mengwei Si, Peide D. Ye:
Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 109 Cycles without VT Drift Penalty. VLSI Technology and Circuits 2022: 1-2 - [c11]Pai-Ying Liao, Sami Alajlouni, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Jinhyun Noh, Calista Wilk, Ali Shakouri, Peide D. Ye:
Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs. VLSI Technology and Circuits 2022: 322-323 - [c10]Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye:
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. VLSI Technology and Circuits 2022: 338-339
2010 – 2019
- 2019
- [c9]Mengwei Si, Xiao Lyu, Peide D. Ye:
Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack. DRC 2019: 93-95 - 2018
- [c8]Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye:
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. DRC 2018: 1-2 - [c7]Wonil Chung, Mengwei Si, Peide D. Ye:
Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. DRC 2018: 1-2 - [c6]Pai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye:
2D Ferroelectric CuInP2S6: Synthesis, ReRAM, and FeRAM. DRC 2018: 1-2 - [c5]Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye:
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. DRC 2018: 1-2 - [c4]Gang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye:
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. DRC 2018: 1-2 - [c3]Peide D. Ye:
Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors. DRC 2018: 1 - [c2]Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye:
Low frequency noise in MOS2 negative capacitance field-effect transistor. IRPS 2018: 1 - 2015
- [c1]Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye:
Characterization and reliability of III-V gate-all-around MOSFETs. IRPS 2015: 4
Coauthor Index
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