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2020 – today
- 2021
[c5]Shanmuganathan Palanisamy, Thomas Basler
, Josef Lutz, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt:
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. IRPS 2021: 1-6- 2020
- [c4]Martina Gerlach, Peter Seidel, Josef Lutz:
Specific aspects regarding evaluation of power cycling tests with SiC devices. IRPS 2020: 1-6 - [c3]Shanmuganathan Palanisamy, Josef Lutz, R. Boldyrjew-Mast, Thomas Basler:
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. IRPS 2020: 1-6
2010 – 2019
- 2018
- [j22]Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz:
Unified view on energy and electrical failure of the short-circuit operation of IGBTs. Microelectron. Reliab. 88-90: 236-241 (2018) - [j21]Josef Lutz, Jörg Franke:
Reliability and reliability investigation of wide-bandgap power devices. Microelectron. Reliab. 88-90: 550-556 (2018) - [j20]Guang Zeng, F. Wenisch-Kober, Josef Lutz:
Study on power cycling test with different control strategies. Microelectron. Reliab. 88-90: 756-761 (2018) - 2016
- [j19]Christian Herold, Jörg Franke, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz:
Requirements in power cycling for precise lifetime estimation. Microelectron. Reliab. 58: 82-89 (2016) - [j18]Christian Herold, Peter Seidel, Josef Lutz, Reinhold Bayerer:
Topologies for inverter like operation of power cycling tests. Microelectron. Reliab. 64: 453-457 (2016) - [j17]Weinan Chen, Jörg Franke, Christian Herold, Riteshkumar Bhojani, Josef Lutz:
Internal processes in power semiconductors at virtual junction temperature measurement. Microelectron. Reliab. 64: 464-468 (2016) - [j16]Lukas Tinschert, Magnar Hernes, Josef Lutz:
Improving the short circuit ruggedness of IGBTs. Microelectron. Reliab. 64: 519-523 (2016) - 2015
- [j15]Lukas Tinschert, Atle Rygg Årdal, Tilo Poller, Marco Bohlländer, Magnar Hernes, Josef Lutz:
Possible failure modes in Press-Pack IGBTs. Microelectron. Reliab. 55(6): 903-911 (2015) - [j14]Susanne Fichtner, Sophia Frankeser, Josef Lutz, Roland Rupp, Thomas Basler, Rolf Gerlach:
Ruggedness of 1200 V SiC MPS diodes. Microelectron. Reliab. 55(9-10): 1677-1681 (2015) - 2014
- [j13]Thomas Basler, M. Pfaffenlehner, Hans Peter Felsl, Franz-Josef Niedernostheide, F. Pfirsch, Hans-Joachim Schulze, Roman Baburske, Josef Lutz:
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept. IET Circuits Devices Syst. 8(3): 205-212 (2014) - [j12]Josef Lutz, Roman Baburske:
Some aspects on ruggedness of SiC power devices. Microelectron. Reliab. 54(1): 49-56 (2014) - 2013
- [j11]P. Steinhorst, Tilo Poller, Josef Lutz:
Approach of a physically based lifetime model for solder layers in power modules. Microelectron. Reliab. 53(9-11): 1199-1202 (2013) - [j10]Tilo Poller, Salvatore D'Arco, Magnar Hernes, Atle Rygg Årdal, Josef Lutz:
Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs. Microelectron. Reliab. 53(9-11): 1755-1759 (2013) - 2012
- [j9]Josef Lutz, Roman Baburske:
Dynamic avalanche in bipolar power devices. Microelectron. Reliab. 52(3): 475-481 (2012) - [j8]Tilo Poller, Thomas Basler, Magnar Hernes, Salvatore D'Arco, Josef Lutz:
Mechanical analysis of press-pack IGBTs. Microelectron. Reliab. 52(9-10): 2397-2402 (2012) - [c2]Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner:
Surge current capability of IGBTs. SSD 2012: 1-6 - [c1]Salvatore D'Arco, Tore Undeland, Marco Bohlländer, Josef Lutz:
A simplified algorithm for predicting power cycling lifetime in Direct Drive wind power systems. SSD 2012: 1-6 - 2011
- [j7]A. Hensler, D. Wingert, Christian Herold, Josef Lutz, Markus Thoben:
Thermal impedance spectroscopy of power modules. Microelectron. Reliab. 51(9-11): 1679-1683 (2011)
2000 – 2009
- 2008
- [j6]Birk Heinze, Josef Lutz, Hans Peter Felsl, Hans-Joachim Schulze:
Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations. Microelectron. J. 39(6): 868-877 (2008) - 2007
- [j5]Franz-Josef Niedernostheide, Hans-Joachim Schulze, Hans Peter Felsl, Thomas Laska, Ulrich Kellner-Werdehausen, Josef Lutz:
Thyristors and IGBTs with integrated self-protection functions. IET Circuits Devices Syst. 1(5): 315-320 (2007) - [j4]D. Polenov, Josef Lutz, Hartmut Pröbstle, Andreas Brösse:
Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes. IET Circuits Devices Syst. 1(5): 387-394 (2007) - 2006
- [j3]Ralf Siemieniec, Hans-Joachim Schulze, Franz-Josef Niedernostheide, W. Südkamp, Josef Lutz:
Compensation and doping effects in heavily helium-radiated silicon for power device applications. Microelectron. J. 37(3): 204-212 (2006) - 2004
- [j2]Ralf Siemieniec, Josef Lutz:
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. Microelectron. J. 35(3): 259-267 (2004) - 2003
- [j1]Josef Lutz, Martin Domeij:
Dynamic avalanche and reliability of high voltage diodes. Microelectron. Reliab. 43(4): 529-536 (2003)
Coauthor Index
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