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Microelectronics Reliability, Volume 61
Volume 61, June 2016
- Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
Editorial. 1-2
- Lado Filipovic, Siegfried Selberherr:
Stress in three-dimensionally integrated sensor systems. 3-10 - Stefan Rosch, Holm Rauchfuss, Stefan Wallentowitz, Thomas Wild, Andreas Herkersdorf:
MPSoC application resilience by hardware-assisted communication virtualization. 11-16 - Husni M. Habal, Helmut Graeb:
A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits. 17-23 - Sanjit Kumar Swain, Arka Dutta, Sarosij Adak, Sudhansu Kumar Pati, Chandan Kumar Sarkar:
Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. 24-29 - Shushanik Karapetyan, Veit Kleeberger, Ulf Schlichtmann:
FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies. 30-34
- Anshul A. Vyas, Changjian Zhou, Patrick Wilhite, Phillip Wang, Cary Y. Yang:
Electrical properties of carbon nanotube via interconnects for 30 nm linewidth and beyond. 35-42 - Matthias Jung, Christian Weis, Norbert Wehn:
A cross layer approach for efficient thermal management in 3D stacked SoCs. 43-47 - Yu-Lin Shen, Geno C. Flores, J. Guthrie:
Numerical study of microbump failure in 3D microelectronic structures. 48-55 - Marvin Chan, Cher Ming Tan, Kheng Chooi Lee, Chuan Seng Tan:
Non-destructive degradation study of copper wire bond for its temperature cycling reliability evaluation. 56-63 - Fa Xing Che, Xiaowu Zhang, Jong-Kai Lin:
Reliability study of 3D IC packaging based on through-silicon interposer (TSI) and silicon-less interconnection technology (SLIT) using finite element analysis. 64-70
- Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey:
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices. 71-77 - Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau:
Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack. 78-81 - Jian Ren, Dawei Yan, Yang Zhai, Wenjie Mou, Xiaofeng Gu:
Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. 82-86 - Udit Narula, Cher Ming Tan, Chao-Sung Lai:
Copper induced synthesis of graphene using amorphous carbon. 87-90 - Hao Jin, Xiao Xu, Yebo Tao, Bin Feng, Demiao Wang:
Reliability enhancement of zinc oxide varistors using sputtered silver electrodes. 91-94 - Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey:
The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode. 95-98 - Arka Dutta, Kalyan Koley, Samar K. Saha, Chandan Kumar Sarkar:
Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET. 99-105
- Weihuai Wang, Hao Jin, Wei Guo, Shurong Dong, Wei Liang, Juin J. Liou, Yan Han:
Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28 nm processing. 106-110 - Zhihui Yu, Hao Jin, Shurong Dong, Hei Wong, Jie Zeng, Weihuai Wang:
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices. 111-114 - Hailian Liang, Huafeng Cao, Xiaofeng Gu, Zixiang Guo:
Design and optimization of LDMOS-SCR devices with improved ESD protection performance. 115-119 - Hailian Liang, Xiuwen Bi, Xiaofeng Gu, Huafeng Cao, Yun Zhang:
Investigation on LDMOS-SCR with high holding current for high voltage ESD protection. 120-124 - Shuai Zhang, Hsiao-Chin Tuan, Xiaojing Wu, Lei Shi, Jian Wu:
300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology. 125-128
- Preetpal Singh, Cher Ming Tan:
A review on the humidity reliability of high power white light LEDs. 129-139 - Lixia Sun, Jianxin Zhu, Hei Wong:
Simulation and evaluation of the peak temperature in LED light bulb heatsink. 140-144 - Preetpal Singh, Cher Ming Tan, Liann-Be Chang:
Early degradation of high power packaged LEDs under humid conditions and its recovery - Myth of reliability rejuvenation. 145-153
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