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ORCIDNVMTS 2018: Sendai, Japan
- Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018. IEEE 2018, ISBN 978-1-5386-7783-4
- Chikako Yoshida, Tomohiro Tanaka, Tadashi Ataka, Astushi Furuya:
Micromagnetic Study of Probabilistic Switching Behavior in Sub 20 nm-CoFeB/MgO Magnetic Tunnel Junction. 1-5 - Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi:
Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. 1-4 - Rana Alhalabi, Etienne Nowak
, Ioan Lucian Prejbeanu, Gregory di Pendina:
High density SOT-MRAM memory array based on a single transistor. 1-3 - Zhizhen Yu, Yichen Fang, Zongwei Wang, Yimao Cai, Ru Huang, Jintong Xu:
Margin Dependence on Array Size for Asymmetric Resistive Memory Cell. 1-3 - Andreas Kindsmüller, Alexander Schönhals, Stephan Menzel, Regina Dittmann, Rainer Waser, Dirk J. Wouters:
The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices. 1-4 - Ryo Tamura, I. Mori, N. Watanabe, Hiroki Koike, Tetsuo Endoh:
Accurate error bit mode analysis of STT-MRAM chip with a novel current measurement module implemented to gigabit class memory test system. 1-5 - Solomon Amsalu Chekol, Jongmyung Yoo, Hyunsang Hwang:
Thermally Stable Te-based Binary OTS Device for Selector Application. 1-4 - Sandip Lashkare, A. Bhat, Pankaj Kumbhare, Udayan Ganguly:
Transient Joule Heating in PrMnO3 RRAM enables ReLU type Neuron. 1-4 - Qilin Zheng, Zongwei Wang, Jian Kang, Zhizhen Yu, Yimao Cai, Jintong Xu:
Hiearchical Crossbar Design for ReRAM based Write Variation Inhibition on-chip learning. 1-3 - Yi-Shao Chen, Zongwei Wang, Zhihong Zhang, Li Wang, Yichen Fang, Jen-Chung Lou, Kaihui Liu, Jintong Xu, Yimao Cai, Ru Huang:
Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. 1-3 - Carsten Funck, C. Baumer, Regina Dittmann, Manfred Martin, Rainer Waser, Stephan Menzel:
Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices. 1-4 - Irem Boybat, S. R. Nandakumar, Manuel Le Gallo, Bipin Rajendran, Yusuf Leblebici, Abu Sebastian, Evangelos Eleftheriou:
Impact of conductance drift on multi-PCM synaptic architectures. 1-4 - Zong-You Luo, Ya-Jui Tsou, Yi-Cheng Dong, Ching Lu, Chee Wee Liu:
Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization. 1-5 - Atsuya Suzuki, Chihiro Matsui, Ken Takeuchi:
Periodic Data Eviction Algorithm of SCM/NAND Flash Hybrid SSD with SCM Retention Time Constraint Capabilities at Extremely High Temperature. 1-5 - Srinath Venkatesan, Marc Aoulaiche:
Overview of 3D NAND Technologies and Outlook Invited Paper. 1-5 - Reika Kinoshita, Chihiro Matsui, Shinpei Matsuda, Yutaka Adachi, Ken Takeuchi:
Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM. 1-6
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