To examine the impact of religion on the Latino vote, we draw on data from a pre-election survey ... more To examine the impact of religion on the Latino vote, we draw on data from a pre-election survey of 1,603 Latino registered voters conducted in October 2004. We advance the argument that religious identity is politically salient only among Latino evangelicals. Controlling for a host of voting determinants, we show that religious identity has an independent effect on the vote
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recr... more We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive si... more A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive simulation data and some measured data were reported. The proposed structure showed very good subthreshold slope, DIBL, GIDL compared to those of overlap structure. By controlling the non-overlap length, we could obtain reasonable speed and on-current characteristics. Also we have shown the GIDL depends on strongly the difference of the gate and the spacer dielectric constants. Based on the results, we conclude reasonable non-overlap length is between 0 (just meet the gate edge) to 10 mn
... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-... more ... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-to-Gate Nonoverlapped Structure Hyunjin Lee, Jongho Lee, Senior Member, IEEE, and Hyungcheol Shin, Senior Member, IEEE ...
We have developed a repeatable process of forming uniform, small-size and high-density Si quantum... more We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated an EEPROM which showed room temperature single electron effects. This proved the feasibility of practical Si quantum dot memory with ON film.
Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Soc... more Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Society of Applied Physics ... Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects ... Ilgweon KIM ∗ , Sangyeon HAN, Kwangseok HAN, Jongho LEE 1 and ...
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recr... more We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive si... more A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive simulation data and some measured data were reported. The proposed structure showed very good subthreshold slope, DIBL, GIDL compared to those of overlap structure. By controlling the non-overlap length, we could obtain reasonable speed and on-current characteristics. Also we have shown the GIDL depends on strongly the difference of the gate and the spacer dielectric constants. Based on the results, we conclude reasonable non-overlap length is between 0 (just meet the gate edge) to 10 mn
... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-... more ... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-to-Gate Nonoverlapped Structure Hyunjin Lee, Jongho Lee, Senior Member, IEEE, and Hyungcheol Shin, Senior Member, IEEE ...
We have developed a repeatable process of forming uniform, small-size and high-density Si quantum... more We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated an EEPROM which showed room temperature single electron effects. This proved the feasibility of practical Si quantum dot memory with ON film.
Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Soc... more Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Society of Applied Physics ... Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects ... Ilgweon KIM ∗ , Sangyeon HAN, Kwangseok HAN, Jongho LEE 1 and ...
To examine the impact of religion on the Latino vote, we draw on data from a pre-election survey ... more To examine the impact of religion on the Latino vote, we draw on data from a pre-election survey of 1,603 Latino registered voters conducted in October 2004. We advance the argument that religious identity is politically salient only among Latino evangelicals. Controlling for a host of voting determinants, we show that religious identity has an independent effect on the vote
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recr... more We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive si... more A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive simulation data and some measured data were reported. The proposed structure showed very good subthreshold slope, DIBL, GIDL compared to those of overlap structure. By controlling the non-overlap length, we could obtain reasonable speed and on-current characteristics. Also we have shown the GIDL depends on strongly the difference of the gate and the spacer dielectric constants. Based on the results, we conclude reasonable non-overlap length is between 0 (just meet the gate edge) to 10 mn
... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-... more ... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-to-Gate Nonoverlapped Structure Hyunjin Lee, Jongho Lee, Senior Member, IEEE, and Hyungcheol Shin, Senior Member, IEEE ...
We have developed a repeatable process of forming uniform, small-size and high-density Si quantum... more We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated an EEPROM which showed room temperature single electron effects. This proved the feasibility of practical Si quantum dot memory with ON film.
Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Soc... more Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Society of Applied Physics ... Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects ... Ilgweon KIM ∗ , Sangyeon HAN, Kwangseok HAN, Jongho LEE 1 and ...
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recr... more We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive si... more A new MOSFET structure with non-overlap S/D to gate and high-ic spacer was proposed. Extensive simulation data and some measured data were reported. The proposed structure showed very good subthreshold slope, DIBL, GIDL compared to those of overlap structure. By controlling the non-overlap length, we could obtain reasonable speed and on-current characteristics. Also we have shown the GIDL depends on strongly the difference of the gate and the spacer dielectric constants. Based on the results, we conclude reasonable non-overlap length is between 0 (just meet the gate edge) to 10 mn
... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-... more ... 1, NO. 4, DECEMBER 2002 219 DC and AC Characteristics of Sub-50-nm MOSFETs With Source/Drain-to-Gate Nonoverlapped Structure Hyunjin Lee, Jongho Lee, Senior Member, IEEE, and Hyungcheol Shin, Senior Member, IEEE ...
We have developed a repeatable process of forming uniform, small-size and high-density Si quantum... more We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated an EEPROM which showed room temperature single electron effects. This proved the feasibility of practical Si quantum dot memory with ON film.
Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Soc... more Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 447451 Part 1, No. 2A, February 2001 c 2001 The Japan Society of Applied Physics ... Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects ... Ilgweon KIM ∗ , Sangyeon HAN, Kwangseok HAN, Jongho LEE 1 and ...
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