Abstract
We present measurements of fluorescence intensity trajectories and associated excited-state decay times from individual CdSe/oligo(phenylene vinylene) (CdSe-OPV) quantum dot nanostructures using time-tagged, time-resolved (TTTR) photon counting techniques. We find that fluorescence decay times for the quantum dot emitter in these composite systems are at least an order of magnitude shorter than ZnS-capped CdSe quantum dot systems. We show that both the blinking suppression and associated lifetime/count rate behavior can be described by a modified version of the diffusive reaction coordinate model which couples slow fluctuations in quantum dot electron (1Se, 1Pe) energies to Auger-assisted hole trapping processes, hence modifying both blinking statistics and excited-state decay rates.
Publication types
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Research Support, Non-U.S. Gov't
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Research Support, U.S. Gov't, Non-P.H.S.
MeSH terms
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Cadmium Compounds / chemistry*
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Cadmium Compounds / radiation effects
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Computer Simulation
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Crystallization / methods
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Data Interpretation, Statistical
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Equipment Failure Analysis
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Light
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Macromolecular Substances / chemistry
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Materials Testing
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Models, Chemical*
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Molecular Conformation
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Nanostructures / chemistry*
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Nanostructures / radiation effects
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Nanostructures / ultrastructure
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Nanotechnology / methods*
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Particle Size
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Photons
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Polymers / chemistry*
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Quantum Dots*
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Selenium Compounds / chemistry*
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Selenium Compounds / radiation effects
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Spectrometry, Fluorescence / methods*
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Statistics as Topic
Substances
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Cadmium Compounds
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Macromolecular Substances
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Polymers
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Selenium Compounds
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cadmium selenide